TWI858038B - 壓印用光硬化性樹脂組合物、壓印用光硬化性樹脂組合物之製造方法、及圖案形成體之製造方法 - Google Patents
壓印用光硬化性樹脂組合物、壓印用光硬化性樹脂組合物之製造方法、及圖案形成體之製造方法 Download PDFInfo
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- TWI858038B TWI858038B TW109109780A TW109109780A TWI858038B TW I858038 B TWI858038 B TW I858038B TW 109109780 A TW109109780 A TW 109109780A TW 109109780 A TW109109780 A TW 109109780A TW I858038 B TWI858038 B TW I858038B
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- photocurable resin
- resin composition
- embossing
- mold
- polymerizable compound
- Prior art date
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/04—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts
- B29C59/046—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts for layered or coated substantially flat surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/005—Surface shaping of articles, e.g. embossing; Apparatus therefor characterised by the choice of material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
- C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
- C08F299/08—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/02—Polycondensates containing more than one epoxy group per molecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
- C08G65/04—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers only
- C08G65/06—Cyclic ethers having no atoms other than carbon and hydrogen outside the ring
- C08G65/16—Cyclic ethers having four or more ring atoms
- C08G65/18—Oxetanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
- C08G65/04—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers only
- C08G65/22—Cyclic ethers having at least one atom other than carbon and hydrogen outside the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
- C08G65/32—Polymers modified by chemical after-treatment
- C08G65/329—Polymers modified by chemical after-treatment with organic compounds
- C08G65/336—Polymers modified by chemical after-treatment with organic compounds containing silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0888—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2083/00—Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Silicon Polymers (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019069168 | 2019-03-29 | ||
JP2019-069168 | 2019-03-29 | ||
JP2019230297 | 2019-12-20 | ||
JP2019-230297 | 2019-12-20 |
Publications (2)
Publication Number | Publication Date |
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TW202104322A TW202104322A (zh) | 2021-02-01 |
TWI858038B true TWI858038B (zh) | 2024-10-11 |
Family
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Family Applications (1)
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TW109109780A TWI858038B (zh) | 2019-03-29 | 2020-03-24 | 壓印用光硬化性樹脂組合物、壓印用光硬化性樹脂組合物之製造方法、及圖案形成體之製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US12344694B2 (enrdf_load_stackoverflow) |
JP (1) | JP7472904B2 (enrdf_load_stackoverflow) |
KR (1) | KR102687886B1 (enrdf_load_stackoverflow) |
CN (1) | CN113614132B (enrdf_load_stackoverflow) |
TW (1) | TWI858038B (enrdf_load_stackoverflow) |
WO (1) | WO2020203472A1 (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7584133B2 (ja) * | 2021-01-28 | 2024-11-15 | 株式会社micro-AMS | 成形体の製造方法 |
CN118974885A (zh) | 2022-03-31 | 2024-11-15 | 大日本印刷株式会社 | 固化膜形成方法、压印模具用基板的制造方法、压印模具的制造方法、凹凸结构体的制造方法、图案形成方法、硬掩模形成方法、绝缘膜形成方法和半导体装置的制造方法 |
TWI852537B (zh) * | 2023-05-08 | 2024-08-11 | 光群雷射科技股份有限公司 | 全像膜之對位成形方法 |
WO2025053279A1 (ja) * | 2023-09-07 | 2025-03-13 | 三菱ケミカル株式会社 | オルガノポリシロキサン、オルガノポリシロキサン含有樹脂組成物及びその硬化物、近赤外光導波路用オルガノポリシロキサン、近赤外光導波路用オルガノポリシロキサン含有樹脂組成物、近赤外光導波路用硬化物、並びに近赤外光導波路及び近赤外光伝送部材、近赤外光導波路の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200407682A (en) * | 2002-07-11 | 2004-05-16 | Molecular Imprints Inc | Step and repeat imprint lithography systems |
JP2009206197A (ja) * | 2008-02-26 | 2009-09-10 | Fujifilm Corp | ナノインプリント用硬化性組成物、硬化物およびその製造方法 |
US20090256287A1 (en) * | 2008-04-09 | 2009-10-15 | Peng-Fei Fu | UV Curable Silsesquioxane Resins For Nanoprint Lithography |
TW201437764A (zh) * | 2013-02-14 | 2014-10-01 | Toray Industries | 負型感光性著色組成物、硬化膜、觸控面板用遮光圖案及觸控面板之製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6090547U (ja) | 1983-11-26 | 1985-06-21 | 三國工業株式会社 | フロ−ト支持構造 |
JP2003128920A (ja) * | 2001-10-26 | 2003-05-08 | Dow Corning Toray Silicone Co Ltd | 硬化性液状シリコーン組成物および半導体装置 |
US6908861B2 (en) | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
JP4629367B2 (ja) * | 2004-05-31 | 2011-02-09 | 東レ・ダウコーニング株式会社 | 活性エネルギー線硬化型オルガノポリシロキサン樹脂組成物、光伝送部材およびその製造方法 |
JP4775561B2 (ja) * | 2005-04-01 | 2011-09-21 | 信越化学工業株式会社 | シルセスキオキサン系化合物混合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法 |
JP5520044B2 (ja) * | 2006-04-11 | 2014-06-11 | ダウ コーニング コーポレーション | 低熱変形シリコーン複合体モールド |
JP5430899B2 (ja) * | 2008-09-12 | 2014-03-05 | 旭化成イーマテリアルズ株式会社 | レーザー彫刻印刷原版及びレーザー彫刻印刷版 |
JP2011035173A (ja) * | 2009-07-31 | 2011-02-17 | Fujifilm Corp | ネガ型化学増幅レジスト組成物及びこれを用いたモールドの作成方法 |
JP2012116108A (ja) * | 2010-12-01 | 2012-06-21 | Asahi Kasei Corp | 樹脂モールド |
CN103059306B (zh) * | 2011-10-18 | 2015-02-18 | 北京化工大学 | 一种高折射率透明有机硅树脂及其制备方法 |
CN107075017B (zh) | 2014-11-07 | 2019-11-05 | Dic株式会社 | 固化性组合物、抗蚀材料及抗蚀膜 |
US11127864B2 (en) * | 2015-03-17 | 2021-09-21 | Optitune Oy | Carbosiloxane polymer compositions, methods of producing the same and the use thereof |
JP6332717B2 (ja) | 2016-05-11 | 2018-05-30 | Dic株式会社 | 光インプリント用硬化性組成物及びそれを用いたパターン転写方法 |
CN106978069A (zh) * | 2017-04-19 | 2017-07-25 | 苏州圣咏电子科技有限公司 | 防污疏水涂料的制备方法与防污疏水涂膜的成形方法 |
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2020
- 2020-03-24 WO PCT/JP2020/013059 patent/WO2020203472A1/ja active IP Right Grant
- 2020-03-24 TW TW109109780A patent/TWI858038B/zh active
- 2020-03-24 KR KR1020217030643A patent/KR102687886B1/ko active Active
- 2020-03-24 CN CN202080024513.XA patent/CN113614132B/zh active Active
- 2020-03-24 US US17/599,514 patent/US12344694B2/en active Active
- 2020-03-24 JP JP2021511501A patent/JP7472904B2/ja active Active
-
2025
- 2025-03-05 US US19/071,064 patent/US20250197552A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200407682A (en) * | 2002-07-11 | 2004-05-16 | Molecular Imprints Inc | Step and repeat imprint lithography systems |
JP2009206197A (ja) * | 2008-02-26 | 2009-09-10 | Fujifilm Corp | ナノインプリント用硬化性組成物、硬化物およびその製造方法 |
US20090256287A1 (en) * | 2008-04-09 | 2009-10-15 | Peng-Fei Fu | UV Curable Silsesquioxane Resins For Nanoprint Lithography |
TW201437764A (zh) * | 2013-02-14 | 2014-10-01 | Toray Industries | 負型感光性著色組成物、硬化膜、觸控面板用遮光圖案及觸控面板之製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN113614132A (zh) | 2021-11-05 |
KR102687886B1 (ko) | 2024-07-25 |
TW202104322A (zh) | 2021-02-01 |
JP7472904B2 (ja) | 2024-04-23 |
US20220169774A1 (en) | 2022-06-02 |
US12344694B2 (en) | 2025-07-01 |
WO2020203472A1 (ja) | 2020-10-08 |
US20250197552A1 (en) | 2025-06-19 |
CN113614132B (zh) | 2024-09-20 |
JPWO2020203472A1 (enrdf_load_stackoverflow) | 2020-10-08 |
KR20210148133A (ko) | 2021-12-07 |
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