TWI849187B - 壓印用樹脂組成物 - Google Patents
壓印用樹脂組成物 Download PDFInfo
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- TWI849187B TWI849187B TW109124419A TW109124419A TWI849187B TW I849187 B TWI849187 B TW I849187B TW 109124419 A TW109124419 A TW 109124419A TW 109124419 A TW109124419 A TW 109124419A TW I849187 B TWI849187 B TW I849187B
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- resin composition
- embossing
- inorganic oxide
- resin
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 47
- 238000004049 embossing Methods 0.000 title claims abstract description 38
- -1 polysiloxane Polymers 0.000 claims abstract description 96
- 229920005989 resin Polymers 0.000 claims abstract description 64
- 239000011347 resin Substances 0.000 claims abstract description 62
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 52
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 50
- 150000001875 compounds Chemical class 0.000 claims abstract description 29
- 239000010419 fine particle Substances 0.000 claims abstract description 25
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 24
- 238000004132 cross linking Methods 0.000 claims abstract description 21
- 125000000524 functional group Chemical group 0.000 claims abstract description 21
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 19
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 19
- 125000001424 substituent group Chemical group 0.000 claims abstract description 19
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 12
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 6
- 229910004283 SiO 4 Inorganic materials 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 42
- 239000011859 microparticle Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 21
- 239000006185 dispersion Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 239000011164 primary particle Substances 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 5
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 26
- 239000002904 solvent Substances 0.000 description 27
- 239000002270 dispersing agent Substances 0.000 description 26
- 238000000576 coating method Methods 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 18
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 15
- 239000003505 polymerization initiator Substances 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 12
- 238000002156 mixing Methods 0.000 description 12
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 8
- 239000004205 dimethyl polysiloxane Substances 0.000 description 8
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 8
- 230000007062 hydrolysis Effects 0.000 description 8
- 238000006460 hydrolysis reaction Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 8
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 7
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 238000006482 condensation reaction Methods 0.000 description 7
- 238000001723 curing Methods 0.000 description 7
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 7
- 238000010298 pulverizing process Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 125000001931 aliphatic group Chemical group 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 239000011324 bead Substances 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 150000002576 ketones Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 229920001249 ethyl cellulose Polymers 0.000 description 4
- 235000019325 ethyl cellulose Nutrition 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229920000609 methyl cellulose Polymers 0.000 description 4
- 239000001923 methylcellulose Substances 0.000 description 4
- 235000010981 methylcellulose Nutrition 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000007870 radical polymerization initiator Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 3
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 description 3
- 235000011152 sodium sulphate Nutrition 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- JKRZOJADNVOXPM-UHFFFAOYSA-N Oxalic acid dibutyl ester Chemical compound CCCCOC(=O)C(=O)OCCCC JKRZOJADNVOXPM-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 2
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 2
- 229910001863 barium hydroxide Inorganic materials 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003240 coconut oil Substances 0.000 description 2
- 235000019864 coconut oil Nutrition 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- ZQMIGQNCOMNODD-UHFFFAOYSA-N diacetyl peroxide Chemical compound CC(=O)OOC(C)=O ZQMIGQNCOMNODD-UHFFFAOYSA-N 0.000 description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 2
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 2
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- 238000007607 die coating method Methods 0.000 description 1
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Classifications
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
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- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/22—Oxides; Hydroxides of metals
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K5/101—Esters; Ether-esters of monocarboxylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
- C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
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- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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Abstract
本發明提供一種壓印用樹脂組成物,其不僅壓印性優異,高折射率、低霧度等光學特性亦優異。本發明係關於一種壓印用樹脂組成物,其包含:(A)由下述通式(1)所表示之聚矽氧烷樹脂與(B)無機氧化物微粒子,
(R1
SiO3/2
)a
(R2 2
SiO2/2
)b
(R3 3
SiO1/2
)c
(SiO4/2
)d
(1)
(通式(1)中,R1
、R2
、R3
分別獨立為氫原子、羥基、烷氧基、碳數1~12之烴基、或具有1個以上交聯性官能基之碳數1~12之取代基,於R1
、R2
、R3
分別存在複數個之情形時,該等亦可不同,R1
、R2
、R3
中之至少1個為具有1個以上交聯性官能基之碳數1~12之取代基,a、b、c及d係滿足0.001≦a≦1.00、0≦b≦0.999、0≦c≦0.30、0≦d≦0.30及a+b+c+d=1.0之數),
聚矽氧烷樹脂(A)與作為任意成分之烷氧基矽烷化合物及硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比為0.2~2.5。
Description
本發明係關於一種壓印用樹脂組成物。
由於微透鏡、繞射光學元件等光學元件之小型化或製造過程之簡化,壓印法作為需要曝光或顯影等複數個步驟之電子束微影術之替代而得到了應用,該壓印法係藉由將鑄模壓抵於基板,轉印鑄模之形狀而進行次微米以下之微細加工。此種壓印法需要一種可藉由壓印製程進行加工,且顯出高透明/高折射率之樹脂材料。為了提高折射率,必須增加具有芳香環之化合物或高折射無機材料之含量,但是尚未開發出具有可適用於UV壓印製程之黏度,且能夠提供具有良好之光學特性之硬化物的組成物。
於專利文獻1中揭示一種壓印用組成物,其包含聚矽氧烷及二氧化矽(silica)微粒子。然而,於實施例中,僅研究了二氧化矽之摻合量較少之組成物,並且是以使用底塗層為前提。
於專利文獻2中,揭示了包含聚矽氧烷及微粒子之組成物及壓印用途。然而,使用了環狀聚矽氧烷,且沒有進行關於壓印性之具體評價。
於專利文獻3中,揭示了包含微粒子之壓印組成物。然而,使用了丙烯酸樹脂及二氧化矽,於實施例中僅研究了二氧化矽之摻合量較少之組成物。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特表2005-527110號公報
[專利文獻2]日本特開2016-160285號公報
[專利文獻3]國際公開第2008/105309號
[發明所欲解決之課題]
本發明之目的在於提供一種不僅壓印性優異,高折射率、低霧度等光學特性亦優異之壓印用樹脂組成物。
[解決課題之技術手段]
本發明者等人針對壓印性進行了研究,結果發現:於包含聚矽氧烷樹脂與無機氧化物微粒子之樹脂組成物中,若增加無機氧化物微粒子之含量,並使聚矽氧烷樹脂(A)與作為任意成分之烷氧基矽烷化合物及硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比成為0.2~2.5,則可兼顧壓印性與光學特性,從而完成本發明。
即,本發明係關於一種壓印用樹脂組成物,其包含:
(A)由下述通式(1)所表示之聚矽氧烷樹脂與(B)無機氧化物微粒子,
(R1
SiO3/2
)a
(R2 2
SiO2/2
)b
(R3 3
SiO1/2
)c
(SiO4/2
)d
(1)
(通式(1)中,R1
、R2
、R3
分別獨立為氫原子、羥基、烷氧基、碳數1~12之烴基、或具有1個以上交聯性官能基之碳數1~12之取代基,於R1
、R2
、R3
分別存在複數個之情形時,該等亦可不同,R1
、R2
、R3
中之至少1個為具有1個以上交聯性官能基之碳數1~12之取代基,
a、b、c及d係滿足0.001≦a≦1.00、0≦b≦0.999、0≦c≦0.30、0≦d≦0.30及a+b+c+d=1.0之數),
聚矽氧烷樹脂(A)與作為任意成分之烷氧基矽烷化合物及硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比為0.2~2.5。
碳數1~12之取代基所具有之交聯性官能基較佳為(甲基)丙烯醯基、(甲基)丙烯醯氧基、乙烯基或環氧基。
聚矽氧烷樹脂(A)之重量平均分子量較佳為1000~5000。
無機氧化物微粒子(B)之分散後之平均粒徑較佳為10~70 nm。
聚矽氧烷樹脂(A)與作為任意成分之烷氧基矽烷化合物及硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比較佳為0.25~1。
無機氧化物微粒子(B)較佳為氧化鋯或氧化鈦。
又,本發明係關於一種壓印基板,其具有:基材;及由前述壓印用樹脂組成物之硬化物構成的凸部或凹部。
進而,本發明係關於一種壓印基板之製造方法,其包含:將前述壓印用樹脂組成物塗佈於基材之步驟;及利用奈米壓印法進行圖案化之步驟。
[發明之效果]
由於本發明之壓印用樹脂組成物之聚矽氧烷樹脂(A)與作為任意成分之烷氧基矽烷化合物及硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比為0.2~2.5,因此壓印性與光學特性優異。
<<壓印基板用樹脂組成物>>
本發明之壓印用樹脂組成物之特徵在於,其包含:
(A)由下述通式(1)所表示之聚矽氧烷樹脂與(B)無機氧化物微粒子,
(R1
SiO3/2
)a
(R2 2
SiO2/2
)b
(R3 3
SiO1/2
)c
(SiO4/2
)d
(1)
(通式(1)中,R1
、R2
、R3
分別獨立為氫原子、羥基、烷氧基、碳數1~12之烴基、或具有1個以上交聯性官能基之碳數1~12之取代基,於R1
、R2
、R3
分別存在複數個之情形時,該等亦可不同,R1
、R2
、R3
中之至少1個為具有1個以上交聯性官能基之碳數1~12之取代基,
a、b、c及d係滿足0.001≦a≦1.00、0≦b≦0.999、0≦c≦0.30、0≦d≦0.30及a+b+c+d=1.0之數),
聚矽氧烷樹脂(A)與作為任意成分之烷氧基矽烷化合物及硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比為0.2~2.5。
<(A)聚矽氧烷樹脂>
聚矽氧烷樹脂(A)係藉由下述通式(1)表示:
(R1
SiO3/2
)a
(R2 2
SiO2/2
)b
(R3 3
SiO1/2
)c
(SiO4/2
)d
(1)
(通式(1)中,R1
、R2
、R3
分別獨立地表示氫原子、羥基、烷氧基、碳數1~12之烴基、或具有1個以上交聯性官能基之碳數1~12之取代基,於R1
、R2
、R3
分別存在複數個之情形時,該等亦可不同,R1
、R2
、R3
中之至少1個為具有1個以上交聯性官能基之碳數1~12之取代基,
a、b、c及d係滿足0.001≦a≦1.00、0≦b≦0.999、0≦c≦0.30、0≦d≦0.30及a+b+c+d=1.0之數)。
R1
、R2
、R3
分別獨立為氫原子、羥基、烷氧基、碳數1~12之烴基、或具有1個以上交聯性官能基之碳數1~12之取代基。所謂烴基係由碳與氫構成之基,例如可列舉脂肪族烴基、芳香族烴基等,所謂具有1個以上交聯性官能基之碳數1~12之取代基係指碳數1~12之烴基之1個以上之氫被交聯性官能基取代而成者。此處,烴基之碳數較佳為1~6。於R1
、R2
、R3
分別存在複數個之情形時,該等亦可不同。又,R1
、R2
、R3
中之至少1個必須為具有1個以上交聯性官能基之碳數1~12之取代基。作為交聯性官能基,可列舉(甲基)丙烯醯基、(甲基)丙烯醯氧基、乙烯基、環氧基等。
a較佳為0.1~1,b較佳為0~0.7,c較佳為0~0.2,d較佳為0~0.1。若處於上述範圍內,則與無機微粒子分散液之相容性良好,可獲得硬化性良好之組成物。
聚矽氧烷樹脂之製造方法並無特別限定,例如可藉由烷氧基矽烷之水解及縮合反應而獲得。
(烷氧基矽烷)
作為烷氧基矽烷,可為由下述式(a)所表示之化合物。
SiR4
(a)
式(a)中,4個R分別為氫、羥基、烷氧基、脂肪族烴基、或芳香族烴基,4個R中之至少1個以上R為烷氧基。並且,烷氧基、脂肪族烴基及芳香族烴基可分別具有取代基。
於4個R中之1個R為烷氧基之情形時稱為單烷氧基矽烷,於2個R為烷氧基之情形時稱為二烷氧基矽烷,於3個R為烷氧基之情形時稱為三烷氧基矽烷,於4個R為烷氧基之情形時稱為四烷氧基矽烷,於聚矽氧烷樹脂之製造中所使用之烷氧基矽烷可為單烷氧基矽烷、二烷氧基矽烷、三烷氧基矽烷及四烷氧基矽烷之任一者。
作為烷氧基,例如可列舉甲氧基及乙氧基等C1-4烷氧基。作為脂肪族烴基,例如可列舉甲基、乙基、丙基、異丙基、丁基、第二丁基、及第三丁基等C1-20烷基。作為芳香族烴基,例如可列舉苯基、甲苯基、及二甲苯基等芳基;及苄基等芳烷基。
作為脂肪族烴基及芳香族烴基所具有之取代基,可列舉(甲基)丙烯醯基、(甲基)丙烯醯氧基、乙烯基、環氧基等交聯性官能基,一級胺基、硫醇基及苯乙烯基等。
作為烷氧基矽烷,例如可列舉甲基三甲氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、甲氧基三甲基矽烷等具有脂肪族烴基之烷氧基矽烷;苯基三甲氧基矽烷、二苯基二甲氧基矽烷、二苯基二乙氧基矽烷、甲基苯基二甲氧基矽烷、甲基苯基二乙氧基矽烷等具有芳香族烴基之烷氧基矽烷;3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、2-胺基苯基三甲氧基矽烷、3-胺基苯基三甲氧基矽烷、3-胺基丙基甲基二甲氧基矽烷、3-胺基丙基甲基二乙氧基矽烷、3-胺基丙基二甲基甲氧基矽烷、3-胺基丙基二甲基乙氧基矽烷等具有胺基之烷氧基矽烷;3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷等具有(甲基)丙烯醯基之烷氧基矽烷;乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三丁氧基矽烷、乙烯基甲基二甲氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三丁氧基矽烷、乙烯基甲基二甲氧基矽烷等具有乙烯基之烷氧基矽烷;β-縮水甘油氧基乙基三甲氧基矽烷、β-縮水甘油氧基乙基三乙氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三乙氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷、β-(3,4-環氧環己基)乙基三乙氧基矽烷、γ-縮水甘油氧基丙基甲基二甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等具有環氧基之烷氧基矽烷。
於水解及縮合反應中,可將具有交聯性官能基之烷氧基矽烷視需要與不具有交聯性官能基之烷氧基矽烷組合使用。又,亦可組合使用二甲基矽烷二醇、二異丙基矽烷二醇、二異丁基矽烷二醇、二正丙基矽烷二醇、二正丁基矽烷二醇、二第三丁基矽烷二醇、苯基甲基矽烷二醇、二環己基矽烷二醇、乙基矽烷三醇及二苯基矽烷二醇等水解性矽烷。
(水解及縮合反應)
水解及縮合反應較佳為於30~120℃、1~24小時,更佳為於40~90℃、2~12小時,進而較佳為於45~80℃、3~8小時之溫度及時間條件下進行。
藉由水解及縮合反應,烷氧基矽烷中之烷氧基形成矽氧烷鍵而獲得聚矽氧烷樹脂,但是於聚矽氧烷樹脂中亦可殘留部分未反應之烷氧基或烷氧基水解而成之羥基。
水解及縮合反應可使用觸媒,作為其觸媒,例如可列舉鹼性觸媒及酸性觸媒。作為鹼性觸媒,可列舉氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丁基銨、氫氧化苄基三甲基銨、氫氧化苄基三乙基銨、第三丁醇鉀、碳酸氫鈉、碳酸鈉、氫氧化鋇、氫氧化鈉及氫氧化鉀等。該等中,自觸媒活性較高之方面考慮,可較佳地使用氫氧化四甲基銨、第三丁醇鉀、碳酸氫鈉、碳酸鈉、氫氧化鋇、氫氧化鈉及氫氧化鉀。作為酸性觸媒,可列舉鹽酸、硫酸、硝酸、乙酸、磷酸、硼酸、三氟乙酸、三氟甲磺酸及對甲苯磺酸等。
於水解、縮合反應中,可視需要使用溶劑。作為此種溶劑,例如可列舉:水;甲醇、乙醇等醇類;四氫呋喃(THF)等醚類;乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、乙二醇二甲醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇單丁醚等乙二醇醚類;乙酸甲基賽珞蘇、乙酸乙基賽珞蘇、乙酸丁基賽珞蘇、丙二醇甲醚乙酸酯(PGMEA)、1-乙酸3-甲氧基丁酯等伸烷基二醇單烷基醚乙酸酯類;甲苯、二甲苯等芳香族烴類;甲基乙基酮、甲基異丁基酮(MIBK)、甲基戊基酮、環己酮等酮類,較佳為酮類、伸烷基二醇單烷基醚乙酸酯、或芳香族烴類。該等溶劑可單獨使用1種,亦可混合使用2種以上。
作為溶劑之摻合量,相對於烷氧基矽烷100質量份而言,較佳為50~500質量份,更佳為100~400質量份。
聚矽氧烷樹脂(A)之重量平均分子量並無特別限定,較佳為1000~5000,更佳為1300~3700。若處於上述範圍內,則有硬化性優異,光學特性或壓印性優異之傾向。
<(B)無機氧化物微粒子>
無機氧化物微粒子(B)無特別限定,例如可列舉由1種金屬元素構成之金屬氧化物或由2種以上金屬元素構成之複合金屬氧化物。作為由1種金屬元素構成之金屬氧化物,例如可列舉氧化鋯(ZrO2
)、氧化鈦(TiO2
)、氧化矽(SiO2
)、氧化鋁(Al2
O3
)、氧化鐵(Fe2
O3
、FeO、Fe3
O4
)、氧化銅(CuO、Cu2
O)、氧化鋅(ZnO)、氧化釔(Y2
O3
)、氧化鈮(Nb2
O5
)、氧化鉬(MoO3
)、氧化銦(In2
O3
、In2
O)、氧化錫(SnO2
)、氧化鉭(Ta2
O5
)、氧化鎢(WO3
、W2
O5
)、氧化鉛(PbO,PbO2
)、氧化鉍(Bi2
O3
)、氧化鈰(CeO2
、Ce2
O3
)、氧化銻(Sb2
O5
)、氧化鍺(GeO2
、GeO)等。該等無機氧化物微粒子可單獨使用,亦可併用2種以上。至於無機微粒子,自獲得之容易性、及能夠容易地調整折射率等光學特性之方面考慮,較佳為氧化鋯、氧化鈦。
作為由2種以上金屬元素構成之複合氧化物,例如可列舉鈦酸鋇等鈦酸鹽、鈦/矽複合氧化物、釔穩定氧化鋯等。此種複合氧化物不僅包含由多成分之元素構成之化合物或固溶體,亦包含具有作為核心之金屬氧化物微粒子之周圍被由其他金屬元素構成之金屬氧化物包覆之核殼結構者、及具有於1個金屬氧化物微粒子中分散有複數個其他金屬氧化物微粒子的多成分分散型結構者。
無機氧化物微粒子之一次粒徑並無特別限定,較佳為1~50 nm,更佳為5~30 nm。若未達1 nm,則無機氧化物微粒子之比表面積較大,凝聚能量較高,因此存在難以保持分散穩定性之情況。另一方面,若超過50 nm,則存在由薄膜或成形體中之無機氧化物微粒子導致之光散射變強,而無法維持較高之透明性之情況。再者,一次粒徑可藉由SEM、TEM等電子顯微鏡或根據比表面積進行換算而測定。
作為無機氧化物微粒子,可使用預先分散於各種溶劑中者。作為溶劑,並無特別限定,例如可列舉:甲醇、乙醇、2-丙醇、丁醇等醇類,乙酸乙酯、乙酸丁酯、乳酸乙酯、丙二醇單甲醚乙酸酯、γ-丁內酯等酯類,二乙醚、乙二醇單甲醚(甲基賽珞蘇)、乙二醇單乙醚(乙基賽珞蘇)、乙二醇單丁醚(丁基賽珞蘇)、二乙二醇單甲醚、二乙二醇單乙醚等醚類,丙酮、甲基乙基酮、甲基異丁基酮、乙醯丙酮、環己酮等酮類,苯、甲苯、二甲苯、乙基苯等芳香族烴類,二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基吡咯啶酮等醯胺類等。該等溶劑可單獨使用,亦可併用2種以上。溶劑與金屬氧化物微粒子之摻合比例無特別限定,較佳為30:70~90:10。
為了使無機氧化物微粒子分散,可摻合分散劑。分散劑只要可分散於溶劑中即可,並無特別限定,例如可列舉:聚丙烯酸系分散劑、多羧酸系分散劑、磷酸系分散劑、聚矽氧系分散劑。
作為聚丙烯酸系分散劑,例如可列舉聚丙烯酸鈉,作為市售品,可列舉Aron系列(東亞合成股份有限公司製造)及SHALLOL系列(第一工業製藥股份有限公司製造)。
作為多羧酸系分散劑,例如可列舉未被陽離子中和之酸性類型者或聚羧酸銨鹽,作為市售品,可列舉AH-103P(第一工業製藥股份有限公司製造)、SN Dispersant 5020、SN Dispersant 5468(San Nopco股份有限公司製造)、Poise 532A、Poise 2100(花王股份有限公司製造)、Marialim AKM-0531、Marialim AKM-1511-60、Marialim HKM-50A、Marialim HKM-150A(日油股份有限公司製造)。
作為磷酸系分散劑,例如可列舉聚氧乙烯烷基醚磷酸酯。作為市售品,可列舉Phosphanol RA-600、ML-220(東邦化學工業股份有限公司製造)、Disparlon PW-36(楠本化成股份有限公司製造)。
作為聚矽氧系分散劑,例如可列舉改質聚矽氧油等。作為市售品,可列舉ES-5612(DuPont Toray Specialty Materials股份有限公司製造)。
至於分散劑之摻合量,相對於無機氧化物微粒子100重量份而言,較佳為0.25~30重量份,更佳為0.25~8重量份,進而較佳為0.5~7重量份,最佳為1~5重量份。若摻合量未達0.25重量份,則存在無機氧化物微粒子未被充分分散之情況,若超過30重量份,則存在於加工成薄膜、成形體等時之耐光性或耐熱性下降之情況,或無法充分獲得無機氧化物微粒子之特性之情況。
於將分散液與聚矽氧烷樹脂混合時,為了提高無機氧化物微粒子與聚矽氧烷樹脂之親和性,可摻合烷氧基矽烷化合物。若使分散液成為酸性條件或鹼性條件,則存在於無機氧化物微粒子之表面的羥基與烷氧基矽烷化合物反應,從而能夠進行無機氧化物微粒子之表面處理。
作為烷氧基矽烷化合物,
較佳為下述式(I)所表示之化合物:
SiR4
(I)
(式中,R為氫、羥基、碳數1~4之烷氧基、可具有取代基之烷基、及可具有取代基之苯基。其中,4個R中之至少1個為碳數1~4之烷氧基或羥基)。
作為烷氧基矽烷化合物之具體例,可列舉3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、苯基三甲氧基矽烷、乙烯基三甲氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、對苯乙烯基三甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、雙(三乙氧基矽烷基丙基)四硫化物、3-異氰酸基丙基三乙氧基矽烷等三烷氧基矽烷,3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、二甲基二甲氧基矽烷、二苯基二甲氧基矽烷等二烷氧基矽烷。該等可單獨使用,亦可併用2種以上。該等中,較佳為三烷氧基矽烷,更佳為3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、苯基三甲氧基矽烷。
至於烷氧基矽烷化合物之摻合量,相對於無機氧化物微粒子100重量份而言,較佳為4~50重量份,更佳為6~38重量份,進而較佳為8~20重量份。若摻合量未達4重量份,則存在難以使無機氧化物微粒子均勻分散之情況,若超過50重量份,則存在無法實現無機氧化物之高度填充,從而無法獲得目標特性。
於分散液中包含分散劑及烷氧基矽烷化合物之情形時,分散劑與烷氧基矽烷化合物之重量比較佳為20:80~5:95,更佳為18:82~7:93,進而較佳為18:82~9:91。若相對於分散劑20,烷氧基矽烷化合物之重量比低於80,則分散劑過剩,於加工成薄膜、成形體等時,成為特性下降之原因,若相對於分散劑5,烷氧基矽烷化合物之重量比超過95,則存在難以製作均勻之分散液之情況。
壓印用樹脂組成物中之無機氧化物微粒子之平均粒徑較佳為10~70 nm,更佳為10~50 nm。於未達10 nm之情形時,需要使用一次粒徑較小之粒子,因此難以分散。另一方面,若超過70 nm,則於將其製成薄膜、成形體等硬化物時存在白濁之情況。平均粒徑可藉由利用動態光散射法、雷射繞射法等之裝置而測定。
聚矽氧烷樹脂(A)與作為任意成分之烷氧基矽烷化合物及硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比為0.2~2.5,較佳為0.25~1.0。又,聚矽氧烷樹脂(A)與作為任意成分之烷氧基矽烷化合物之合計重量與無機氧化物微粒子(B)之重量的重量比較佳為0.2~2.5,更佳為0.25~1.0。若處於上述範圍內,則壓印性優異,且可充分滿足光學元件所需之光學特性。
又,無機氧化物微粒子(B)較佳為於壓印用樹脂組成物之固形物成分中為25~80重量%,更佳為30~80重量%,進而較佳為35~75重量%。若處於上述範圍內,則壓印性優異,且可充分滿足光學元件所需之光學特性。
<任意成分>
於本發明之壓印用樹脂組成物中,除前述成分以外,亦可任意地含有其他成分。作為其他成分,例如可列舉:環氧樹脂或丙烯酸酯、三聚氰胺等聚矽氧烷樹脂以外之硬化性樹脂、丙烯酸樹脂或聚酯樹脂、聚胺酯樹脂(polyurethane resin)、聚烯烴樹脂等熱塑性樹脂、聚合起始劑、調平劑、界面活性劑、光敏劑、消泡劑、中和劑、抗氧化劑、脫模劑、紫外線吸收劑、溶劑等。
作為硬化性樹脂,例如可列舉雙酚A型、雙酚F型、酚系酚醛清漆型、具有多個苯環之多官能型即四(羥基苯基)乙烷型或三(羥基苯基)甲烷型、聯苯型、三苯酚甲烷型、萘型、鄰酚醛型、二環戊二烯型、胺基苯酚型、茀型、脂環式等環氧樹脂、聚矽氧環氧樹脂等環氧樹脂;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、三羥甲基丙烷三丙烯酸酯、二-三羥甲基丙烷四丙烯酸酯、新戊四醇三丙烯酸酯、新戊四醇四丙烯酸酯、二新戊四醇五丙烯酸酯、二新戊四醇六丙烯酸酯、烷基改質二新戊四醇五丙烯酸酯、乙二醇(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、四亞甲基乙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯、9,9-雙(4-(甲基)丙烯醯氧基苯基)茀等丙烯酸酯,乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、1,4-丁二醇二縮水甘油醚、新戊乙二醇二縮水甘油醚或1,6-己二醇二縮水甘油醚等脂肪族環氧化合物或9,9-雙(4-縮水甘油氧基苯基)茀等具有茀之環氧化合物、三聚氰胺等。
作為硬化性樹脂之摻合量,相對於無機微粒子100重量份而言,較佳為0~100重量份,更佳為0.1~50重量份。又,作為硬化性樹脂之摻合量,相對於聚矽氧烷樹脂(A)100重量份而言,較佳為0~50000重量份,更佳為0~10000重量份,進而較佳為0~1000重量份,特佳為1~100重量份,最佳為5~50重量份。
作為聚矽氧烷樹脂(A)之摻合量,相對於無機微粒子100重量份而言,較佳為0.01~500重量份,更佳為0.1~300重量份,進而較佳為0.2~200重量份。
作為聚合起始劑,可使用光自由基聚合起始劑、熱自由基聚合起始劑等。該等聚合起始劑可單獨使用,亦可併用2種以上聚合起始劑,例如併用2種以上光自由基聚合起始劑或2種以上熱自由基聚合起始劑,或亦可併用光自由基聚合起始劑與熱自由基聚合起始劑。
作為光自由基聚合起始劑,例如可列舉2,2-二甲氧基-1,2-二苯乙烷-1-酮、1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、1-[4-(2-羥基乙氧基)-苯基]-2-羥基-2-甲基-1-丙烷-1-酮、2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]苯基}-2-甲基-丙烷-1-酮、2-甲基-1-(4-甲硫基苯基)-2-啉基丙烷-1-酮、2-苄基-2-二甲胺基-1-(4-啉基苯基)-丁酮-1、雙(2,4,6-三甲基苯甲醯)-苯基氧化膦等。
作為熱自由基聚合起始劑,例如可列舉:二異丙苯基過氧化物、第三丁基過氧化物、2,5-二甲基-2,5-雙(第三丁基過氧基)己烷、2,5-二甲基-2,5-雙(第三丁基過氧基)己炔-3、1,3-雙(第三丁基過氧基異丙基)苯、1,1-雙(第三丁基過氧基)戊酸酯、過氧化苯甲醯、過氧化苯甲酸第三丁酯、過氧化乙醯、異丁基過氧化物、過氧化辛醯、過氧化癸醯、過氧化月桂醯、過氧化3,3,5-三甲基己醯、過氧化2,4-二氯苯甲醯、過氧化間甲苯甲醯等。
作為聚合起始劑之摻合量,相對於具有交聯性官能基之成分100重量份而言,較佳為0.1~25重量份,更佳為1~20重量份。
<調平劑>
作為調平劑,並無特別限定,例如可列舉:聚醚改質聚二甲基矽氧烷、聚醚改質矽氧烷、聚醚酯改質之含有羥基之聚二甲基矽氧烷、聚醚改質之含有丙烯醯基之聚二甲基矽氧烷、聚酯改質之含有丙烯醯基之聚二甲基矽氧烷、全氟聚二甲基矽氧烷、全氟聚醚改質聚二甲基矽氧烷、全氟聚酯改質聚二甲基矽氧烷等矽氧烷系化合物;全氟烷基羧酸、全氟烷基聚氧乙烯乙醇等氟系化合物;聚氧乙烯烷基苯醚、環氧丙烷聚合物、環氧乙烷聚合物等聚醚系化合物;椰子油脂肪酸胺鹽、松脂膠等羧酸;蓖麻油硫酸酯類、磷酸酯、烷基醚硫酸鹽、山梨醇酐脂肪酸酯、磺酸酯、琥珀酸酯等酯系化合物;烷基芳基磺酸胺鹽、磺基琥珀酸二辛基鈉等磺酸鹽化合物;月桂基磷酸鈉等磷酸鹽化合物;椰子油脂肪酸乙醇醯胺等醯胺化合物;丙烯酸系化合物等。
作為使用調平劑之情形時之摻合量,較佳為於壓印用樹脂組成物之固形物成分中為0.001~5重量%,更佳為0.01~1重量%,進而較佳為0.05~0.5重量%。
<溶劑>
作為溶劑,並無特別限定,例如可列舉:甲醇、乙醇、異丙醇、乙二醇、二乙二醇、三乙二醇、丙二醇等醇類;四氫呋喃等醚類;乙二醇單甲醚(甲基賽珞蘇)、乙二醇二甲醚、乙二醇甲基乙基醚、乙二醇單乙醚(乙基賽珞蘇)等乙二醇醚類;乙酸甲基賽珞蘇、乙酸乙基賽珞蘇等乙二醇烷基醚乙酸酯類;二乙二醇二乙醚、二乙二醇二甲醚、二乙二醇二丁醚、二乙二醇乙基甲基醚等二乙二醇二烷基醚類;二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚等二乙二醇單烷基醚類;丙二醇單甲醚等丙二醇單烷基醚類;丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單乙醚乙酸酯、乙二醇單甲醚乙酸酯、乙二醇單丁醚乙酸酯、二乙二醇單乙醚乙酸酯、二乙二醇單丁醚乙酸酯、1-乙酸3-甲氧基丁酯等伸烷基二醇單烷基醚乙酸酯類;甲苯、二甲苯等芳香族烴類;丙酮、甲基乙基酮、甲基戊基酮、環己酮、4-羥基-4-甲基-2-戊酮等酮類;2-羥基丙酸乙酯、2-羥基-2-甲基丙酸甲酯、2-羥基-2-甲基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-2-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、琥珀酸二甲酯、琥珀酸二乙酯、己二酸二乙酯、丙二酸二乙酯、草酸二丁酯等酯類等。該等中,較佳為乙二醇醚類、伸烷基二醇單烷基醚乙酸酯類、二乙二醇二烷基醚類、酮類及酯類,更佳為3-乙氧基丙酸乙酯、乳酸乙酯、丙二醇單甲醚乙酸酯(PGMEA)、二乙二醇單乙醚乙酸酯及甲基戊基酮。該等溶劑可單獨使用,亦可併用2種以上。
組成物之固形物成分率並無特別限定,較佳為10~85重量%,更佳為20~80重量%,進而較佳為30~75重量%。若處於上述範圍內,則分散穩定性、壓印性優異,可獲得足夠之膜厚。
本發明之壓印用樹脂組成物之黏度並無特別限定,較佳為0.1~100 mPa・s,更佳為3.0~50 mPa・s。若處於上述範圍內,則塗佈性優異。
壓印用樹脂組成物之硬化物之折射率並無特別限定,較佳為1.62~2.0,更佳為1.65~1.9。若處於上述範圍內,則可維持作為光學元件之充分之光學特性。
壓印用樹脂組成物之硬化物之阿貝數並無特別限定,較佳為15~40,更佳為20~40。若處於上述範圍內,則可維持作為光學元件之充分之光學特性。
壓印用樹脂組成物之硬化物之全光線穿透率並無特別限定,較佳為85%以上,更佳為90%以上,進而較佳為95%以上。若處於上述範圍內,則可維持作為光學元件之充分之光學特性。
壓印用樹脂組成物之硬化物之霧度值越低則光學特性越好,從而較佳,例如較佳為1%以下,更佳為0.5%以下。
<混合步驟>
聚矽氧烷樹脂(A)、無機氧化物微粒子(B)、視需要摻合之分散劑、烷氧基矽烷化合物及溶劑等任意成分之混合順序並無特別限定,可按照任意之順序對溶劑添加聚矽氧烷樹脂、無機氧化物微粒子、分散劑、烷氧基矽烷化合物等任意成分,亦可於溶劑中分散有無機微粒子之分散液中添加聚矽氧烷樹脂(A)及視需要摻合之硬化性樹脂、聚合起始劑、調平劑等任意成分。
<濕式粉碎步驟>
於使用分散於溶劑中之無機微粒子之情形時,可使用藉由濕式粉碎步驟而分散者。於濕式粉碎步驟中,可藉由濕式粉碎將無機氧化物微粒子(B)、視需要摻合之分散劑、烷氧基矽烷化合物及溶劑之混合物粉碎。藉由於溶劑中進行濕式粉碎,而同時進行無機氧化物微粒子之粉碎與該粉碎物之分散。作為濕式粉碎步驟中所使用之濕式粉碎機,可列舉球磨機、珠磨機,亦可使用具有與該等研磨機不同機制之裝置。於濕式粉碎機使用珠磨機之情形時,珠粒直徑較佳為30~100 μm,旋轉速度較佳為6~12 m/秒。
<<壓印基板之製造方法>>
本發明之壓印基板之製造方法之特徵在於:包含將前述壓印用樹脂組成物塗佈於基材之步驟及利用奈米壓印法進行圖案化之步驟。又,亦可設置使藉由圖案化所獲得之塗膜硬化之步驟。
本發明之壓印基板之製造方法中,基材及/或原版基材之至少一者選擇透光性材料。基材之材質並無特別限定,可根據用途進行選擇,例如可列舉石英、玻璃、陶瓷材料、蒸鍍膜、磁性膜、反射膜、Ni、Cu、Cr、Fe等金屬基板、紙、SOG(旋塗玻璃)、TFT陣列基板、PDP電極板、ITO等導電基材、絕緣基材、矽、氮化矽、多晶矽、氧化矽、非晶矽等之半導體製作基板、聚乙烯、聚丙烯、聚酯、聚萘二甲酸乙二酯、聚碳酸酯、聚醯亞胺、環烯烴、聚苯乙烯、聚四氟乙烯、PMMA、ABS樹脂等聚合物基板等,並無特別限制。又,基材之形狀亦無特別限制,可為板狀,亦可為卷狀。又,如上所述,作為基材,可根據與原版之組合等而選擇透光性或非透光性者。
將前述壓印用樹脂組成物塗佈於基材之方法並無特別限定,例如可列舉:棒式塗佈法、旋轉塗佈法、噴塗法、浸漬塗佈法、噴嘴塗佈法、凹版塗佈法、逆輥塗佈法、模嘴塗佈法、氣刀塗佈法、刮刀塗佈法、桿式塗佈法、淋幕式塗佈法、刮塗法、傳送輥塗佈法、擠壓塗佈法、浸漬塗佈法、接觸塗佈法、壓光塗佈法、擠壓塗佈法等。
塗膜之厚度並無特別限定,較佳為0.005~100 μm,更佳為0.05~40 μm,進而較佳為0.1~20 μm。若處於上述範圍內,則成為壓印性優異之膜,且可維持充分之光學特性。
利用奈米壓印法所進行之圖案化係指於將形成有圖案之原版(轉印壓印版)按壓於塗佈有硬化性樹脂之基板上的狀態下,利用光或熱使壓印用樹脂組成物硬化,從而轉印微細結構圖案。硬化後,將原版去除而製作壓印基板。
原版之材質無特別限定,例如,作為透光型原版,可列舉:矽、玻璃、石英、PMMA、聚碳酸酯樹脂等透光性樹脂、透明金屬蒸鍍膜、聚二甲基矽氧烷等之柔性膜、光硬化膜、金屬膜等。又,作為非透光型原版,並無特別限定,只要具有規定強度即可。具體而言,可例示陶瓷材料、蒸鍍膜、磁性膜、反射膜、Ni、Cu、Cr、Fe等之金屬基板、SiC、矽、氮化矽、多晶矽、氧化矽、非晶矽等之基板等,並無特別限制。又,鑄模之形狀亦無特別限制,可為板狀鑄模或卷狀鑄模之任意者。又,若使用具有柔軟性之樹脂製模具,則可容易地以輥對輥方式進行膜壓印。
按壓之壓力並無特別限定,較佳為0.001~10 MPa,更佳為0.01~5 MPa。押壓時間並無特別限定,較佳為0.1~30分鐘,更佳為0.5~10分鐘。
作為原版之圖案,並無特別限定,例如可列舉配線狀圖案、線與間隙圖案、蛾眼狀圖案、由圓柱狀、圓錐狀、圓錐台狀、多角柱狀(例如四角柱狀)、多角錐狀(例如四角錐狀)、多角錐台狀(例如四角錐台狀)之突起或凹陷構成之圖案等。
本發明之硬化物之製造方法中所使用之原版可使用進行了脫模處理者,以提高壓印用樹脂組成物與原版表面之剝離性。脫模處理方法並無特別限定,例如可列舉利用聚矽氧系、氟系、非離子系等界面活性劑、矽烷偶合劑、含氟類鑽碳等之處理。
於塗佈步驟後,可與壓印用樹脂組成物相應地設置溶劑乾燥步驟。尤其是於使用有高沸點溶劑之情形時,為了獲得平滑之塗膜,或為了減少利用奈米壓印法製作圖案後之收縮,亦可設置乾燥步驟。
樹脂組成物之硬化方法無特別限定,可使用光硬化或熱硬化。於熱硬化方法中,加熱溫度並無特別限定,較佳為60~300℃,更佳為100~250℃。若加熱溫度未達60℃,則存在硬化不良之情況,若超過300℃,則存在由於基材之材質而造成基材之形狀受損之情況。又,加熱時間並無特別限定,較佳為5~120秒,更佳為10~60秒。若加熱時間未達5秒,則存在硬化不良之情況,若超過120秒,則存在由於基材之材質而造成基材之形狀受損之情況,又,由於步驟所需之時間變長,因此就生產性之觀點而言欠佳。
於光硬化方法中,並無特別限定,於本發明之壓印用樹脂組成物之製造方法中,於用光照射前述圖案形成層之步驟中之光照射之照射量只要充分大於硬化所需之照射量即可。硬化所需之照射量係對壓印用樹脂組成物之不飽和鍵之消耗量或硬化膜之黏性進行調查後而適當決定,例如理想的是5 mJ/cm2
~2000 mJ/cm2
之範圍。至於光照射時之基板溫度,通常於室溫下進行,但亦可為了提高反應性而加熱同時進行光照射。
用於使本發明之壓印用樹脂組成物硬化之光並無特別限定,例如可列舉高能量游離輻射、近紫外、遠紫外、可見、紅外等區域之波長之光或放射線。作為高能量游離輻射源,例如藉由柯克勞夫(Cockcroft)型加速器、凡德格拉夫型加速器、線性加速器、電子感應加速器(betatron)、迴旋加速器等加速器進行了加速之電子束可於工業上最方便、最經濟地使用,除此以外,亦可使用自放射性同位素或核反應爐等放射之γ射線、X射線、α射線、中子射線、質子束等放射線。作為紫外線源,例如可列舉紫外線螢光燈、低壓水銀燈、高壓水銀燈、超高壓水銀燈、氙氣燈、碳弧燈、太陽能燈等。放射線例如包括微波、EUV。又,LED、半導體雷射光、或248 nm之KrF準分子雷射光或193 nm ArF準分子雷射等在半導體之微細加工中使用之雷射光亦可適用於本發明中。該等光可使用單色光,亦可為複數個波長不同之光(混合光)。
於利用奈米壓印法進行圖案化,將原版去除後,可視需要設置硬化步驟。
本發明之壓印基板之特徵在於:具有基材及由前述壓印用光硬化性組成物之硬化物構成的凸部或凹部。
本發明之壓印基板能以光學塗覆塗膜、光學構件或成形體之形式適宜地用於光學裝置、半導體裝置、顯示裝置等。作為具體例,例如可列舉:有機EL、觸控面板、觸控感測器、液晶顯示器、CMOS、太陽能電池、電晶體、發光二極體、記憶體、IC、LSI、CPU、RFID、CCD、印刷配線板、半導體用安裝基板、光波導、濾光器、抗反射膜、透鏡、稜鏡、反射鏡、雷射、共振器、PDP、電子紙、MEMS等。
[實施例]
以下,列舉實施例對本發明加以說明,但本發明並不受限於以下實施例。以下,除非另有說明,否則「份」或「%」分別表示「重量份」或「重量%」。
以下,對實施例及比較例中使用之各種藥品進行彙總說明。
(1)無機氧化物微粒子
氧化鋯(第一稀元素化學工業股份有限公司製造,UEP-50,平均一次粒徑20 nm)
氧化鈦(日本Aerosil股份有限公司製造,P-90,平均一次粒徑13 nm)
(2)分散劑
高分子型分散劑(BYK-Chemie Japan股份有限公司製造,BYK118)
(3)烷氧基矽烷
3-甲基丙烯醯氧基丙基三甲氧基矽烷(信越化學工業股份有限公司製造,KBM-503)
苯基三甲氧基矽烷(信越化學工業股份有限公司製造,KBM-103)
(4)溶劑
丙二醇單甲醚乙酸酯(Daicel股份有限公司製造,PGMEA)
甲基異丁基酮(東京化成工業股份有限公司製造,MIBK)
(5)硬化性樹脂
二新戊四醇六丙烯酸酯(DPHA)(新中村化學工業股份有限公司製造)
含有茀骨架之環氧樹脂(OGSOL EA-0200)(Osaka Gas Chemicals股份有限公司製造)
(6)聚合起始劑
光自由基聚合起始劑(IGM Resins股份有限公司製造,Omnirad 127)
光自由基聚合起始劑(IGM Resins股份有限公司製造,Omnirad TPO H)
(7)調平劑
聚矽氧系調平劑(BYK-Chemie Japan股份有限公司製造,BYK-331)
合成例1
將3-甲基丙烯醯氧基丙基三甲氧基矽烷與苯基三甲氧基矽烷以莫耳比成為90:10之方式加以混合,用MIBK稀釋至50重量%,以烷氧基矽烷總量之3當量之量添加水。以烷氧基矽烷總量之0.05當量之量滴加20重量%之氫氧化鈉水溶液,於60℃加熱3小時。向反應後之溶液中添加水後將其去除之分液步驟進行3次,添加硫酸鈉進行脫水。其後,藉由蒸發器進行濃縮而獲得聚矽氧烷A。藉由GPC測定所獲得之聚矽氧烷A之分子量,結果重量平均分子量為3300。
合成例2
將3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷與苯基三甲氧基矽烷以莫耳比成為70:30之方式加以混合,用MIBK稀釋至50重量%,以烷氧基矽烷總量之3當量之量添加水。以烷氧基矽烷總量之0.05當量之量滴加20重量%之氫氧化鈉水溶液,於60℃加熱3小時。向反應後之溶液中添加水後將其去除之分液步驟進行3次,添加硫酸鈉進行脫水。其後,藉由蒸發器進行濃縮而獲得聚矽氧烷B。藉由GPC測定所獲得之聚矽氧烷B之分子量,結果重量平均分子量為2700。
合成例3
將3-甲基丙烯醯氧基丙基三甲氧基矽烷與二苯基矽烷二醇以莫耳比成為40:60之方式加以混合,以烷氧基矽烷與矽烷二醇之總莫耳數之0.05當量之量添加Ba(OH)2
,於80℃加熱3小時。向反應溶液中添加甲苯,於80℃加熱同時以50 hPa進行減壓濃縮。利用甲苯進行稀釋以使反應溶液之固形物成分成為50 wt%,然後重複3次添加水後將其去除之分液步驟,使用硫酸鈉進行脫水。其後,藉由蒸發器進行濃縮而獲得聚矽氧烷C。藉由GPC測定所獲得之聚矽氧烷C之分子量,結果重量平均分子量為2300。
實施例1~14及比較例1~3
將無機氧化物微粒子、分散劑、烷氧基矽烷化合物及溶劑以與表1所示之摻合量相同之比率加以混合。繼而,使用介質型分散機(珠磨機)使獲得之混合物分散,獲得無機氧化物微粒子分散液。珠磨機之處理條件為:混合物之添加總重量350 g,珠粒直徑50 μm,旋轉速度10 m/秒,分散時間180分鐘。
於所獲得之無機氧化物微粒子分散液中,以表1所示之摻合量摻合聚矽氧烷樹脂、硬化性樹脂、聚合起始劑及調平劑,於室溫進行攪拌,藉此製作壓印用樹脂組成物。
<微粒子之分散粒徑>
將無機氧化物微粒子分散液用PGMEA稀釋以使粒子濃度成為1重量%,用Malvern公司製造之Zetasizer Nano ZS進行測定。
<黏度>
針對所獲得之壓印用樹脂組成物,使用黏度計(東機產業股份有限公司製造,B型黏度計)測定其於25℃之黏度。
<折射率與阿貝數>
使用旋轉塗佈法將所獲得之壓印用樹脂組成物塗佈於矽基板上,於80℃使溶劑乾燥2分鐘,以1000 mJ/cm2
曝光而使其硬化,從而製作500 μm之塗膜。使用分光橢偏計(J. A. Woollam Japan股份有限公司製造,M-2000C)測定所獲得之塗膜的折射率、阿貝數。
<全光線穿透率與霧度值>
利用旋轉塗佈法將所獲得之壓印用樹脂組成物塗佈於0.7 mm之白板玻璃基板上,於80℃使溶劑乾燥2分鐘,以1000 mJ/cm2
曝光而使其硬化,從而製成3 μm之塗膜。根據JIS K7150,使用霧度計(Suga Test Instruments公司製造,HGM-2B)測定所獲得之塗膜的全光線穿透率與霧度值。
<壓印性>
利用旋轉塗佈法將所獲得之壓印用樹脂組成物塗佈於0.7 mm之白板玻璃基板上,於80℃使溶劑乾燥2分鐘而獲得3 μm之塗膜。其次,於室溫,以壓力10 bar對形成有寬度500 nm、深度500 nm之L/S圖案之聚二甲基矽氧烷製之原版進行按壓,使用Obducat公司製造之Eitre3以1000 mJ/cm2
進行硬化後,去除圖案而獲得硬化物。
藉由SEM觀察所轉印之圖案,根據下述基準以4個等級評價壓印性。將結果示於表1。
○:清晰地轉印了圖案,壓印性良好。
△:轉印了圖案,但觀察到缺漏及/或變形。
×:於脫模時圖案之全部或大部分自基材剝離。
××:並未於深度方向上插入鑄模,圖案未被轉印。
[表1]
組成 | 實施例1 | 實施例2 | 實施例3 | 實施例4 | 實施例5 | 實施例6 | 實施例7 | 實施例8 | 實施例9 | 實施例10 | 實施例11 | 實施例12 | 實施例13 | 實施例14 | 比較例1 | 比較例2 | 比較例3 | ||
分散液 | 無機氧化物 微粒子 | UEP-50 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | 50.00 | |||
P-90 | 50.00 | 50.00 | 50.00 | ||||||||||||||||
分散劑 | BYK118 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 4.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | |
烷氧基矽烷 | KBM-503 | 10.00 | 10.00 | 10.00 | 10.00 | 10.00 | 10.00 | 8.33 | 10.00 | 10.00 | 10.00 | 10.00 | 7.00 | 10.00 | 10.00 | 7.00 | 10.00 | 10.00 | |
溶劑 | PGMEA | 30.00 | 30.00 | 35.00 | 30.00 | 30.00 | 35.00 | 40.00 | 18.00 | 35.00 | 20.00 | 70.00 | 30.00 | 35.00 | 35.00 | 55.00 | 20.00 | 35.00 | |
聚矽氧烷 樹脂 | 矽氧烷A | 4.00 | 5.00 | 20.00 | 16.25 | 66.67 | 100.00 | 15.00 | 5.00 | 5.00 | 5.00 | 0.10 | 2.00 | 2.00 | 125.00 | ||||
矽氧烷B | 5.00 | ||||||||||||||||||
矽氧烷C | 5.00 | ||||||||||||||||||
硬化性樹脂 | BPFG-A | 20.00 | 20.00 | ||||||||||||||||
DPHA | 5.00 | 20.00 | |||||||||||||||||
聚合起始劑 | Omnirad 127 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | 2.00 | ||||
Omnirad TPO H | 2.00 | 2.00 | 2.00 | ||||||||||||||||
調平劑 | BYK-331 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | 0.10 | |
合計 | 97.10 | 98.10 | 118.10 | 98.10 | 98.10 | 114.35 | 168.10 | 181.10 | 118.10 | 88.10 | 138.10 | 98.10 | 118.20 | 120.10 | 117.10 | 208.10 | 118.10 | ||
聚矽氧烷樹脂/無機氧化物微粒子 | 0.280 | 0.300 | 0.600 | 0.300 | 0.300 | 0.525 | 1.500 | 2.200 | 0.500 | 0.300 | 0.300 | 0.240 | 0.202 | 0.240 | 0.180 | 2.700 | 0.200 | ||
黏度(mPa・s) | 10 | 10 | 12 | 10 | 10 | 11 | 13 | 14 | 12 | 30 | 4 | 8 | 15 | 10 | 9 | 16 | 11 | ||
評價 | 微粒子之分散粒徑(nm) | 32 | 32 | 33 | 32 | 32 | 40 | 40 | 40 | 33 | 32 | 32 | 35 | 35 | 35 | 32 | 35 | 32 | |
折射率 | 1.8 | 1.78 | 1.7 | 1.78 | 1.78 | 1.9 | 1.7 | 1.65 | 1.7 | 1.78 | 1.78 | 1.77 | 1.78 | 1.77 | 1.84 | 1.6 | 1.7 | ||
阿貝數 | 33 | 32 | 29 | 31 | 30 | 19 | 22 | 25 | 28 | 32 | 32 | 31 | 32 | 32 | 34 | 27 | 36 | ||
全光線穿透率(%) | 95 | 95.4 | 97 | 95.4 | 95.4 | 92.6 | 96.9 | 97.9 | 97 | 95.2 | 95.4 | 95.6 | 95.3 | 95.4 | 94.5 | 98.9 | 97 | ||
霧度值 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | ||
壓印性 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ×× | △ | × |
如表1所示,於實施例1~14之壓印用樹脂組成物中,光學特性及壓印性優異。於包含少量聚矽氧烷樹脂及大量無機氧化物微粒子之比較例1之壓印用樹脂組成物、或包含大量聚矽氧烷樹脂及少量無機氧化物微粒子之比較例2之壓印用樹脂組成物中,壓印性較差。又,於不包含聚矽氧烷樹脂之比較例3之壓印用樹脂組成物中,壓印性亦較差。
無
無
Claims (8)
- 一種壓印用樹脂組成物,其包含:(A)由下述通式(1)所表示之聚矽氧烷樹脂、(B)一次粒徑為1~50nm之無機氧化物微粒子與烷氧基矽烷化合物,(R1SiO3/2)a(R2 2SiO2/2)b(R3 3SiO1/2)c(SiO4/2)d (1)(通式(1)中,R1、R2、R3分別獨立為氫原子、羥基、烷氧基、碳數1~12之烴基、或具有1個以上交聯性官能基之碳數1~12之取代基,於R1、R2、R3分別存在複數個之情形時,該等亦可不同,R1、R2、R3中之至少1個為具有1個以上交聯性官能基之碳數1~12之取代基,a、b、c及d係滿足0.001≦a≦1.00、0≦b≦0.999、0≦c≦0.30、0≦d≦0.30及a+b+c+d=1.0之數),聚矽氧烷樹脂(A)與烷氧基矽烷化合物及作為任意成分之硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比為0.2~2.5,且組成物之固形物成分率為10~85重量%。
- 如請求項1之壓印用樹脂組成物,其中,碳數1~12之取代基所具有之交聯性官能基為(甲基)丙烯醯基、(甲基)丙烯醯氧基、乙烯基或環氧基。
- 如請求項1或2之壓印用樹脂組成物,其中,聚矽氧烷樹脂(A)之重量平均分子量為1000~5000。
- 如請求項1或2之壓印用樹脂組成物,其中,無機氧化物微粒子(B)之分散後之平均粒徑為10~70nm。
- 如請求項1或2之壓印用樹脂組成物,其中,聚矽氧烷樹脂(A)與烷氧基矽烷化合物及作為任意成分之硬化性樹脂之合計重量與無機氧化物微粒子(B)之重量的重量比為0.25~1。
- 如請求項1或2之壓印用樹脂組成物,其中,無機氧化物微粒子 (B)為氧化鋯或氧化鈦。
- 一種壓印基板,其具有:基材;及由請求項1至6中任一項之壓印用樹脂組成物之硬化物構成的凸部或凹部。
- 一種壓印基板之製造方法,其包含:將請求項1至6中任一項之壓印用樹脂組成物塗佈於基材之步驟;及利用奈米壓印法進行圖案化之步驟。
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WO2021015044A1 (ja) | 2021-01-28 |
KR20220039703A (ko) | 2022-03-29 |
JPWO2021015044A1 (zh) | 2021-01-28 |
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