TWI848173B - 研磨裝置及研磨方法 - Google Patents

研磨裝置及研磨方法 Download PDF

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Publication number
TWI848173B
TWI848173B TW109129026A TW109129026A TWI848173B TW I848173 B TWI848173 B TW I848173B TW 109129026 A TW109129026 A TW 109129026A TW 109129026 A TW109129026 A TW 109129026A TW I848173 B TWI848173 B TW I848173B
Authority
TW
Taiwan
Prior art keywords
pure water
polishing
aforementioned
hole
height
Prior art date
Application number
TW109129026A
Other languages
English (en)
Chinese (zh)
Other versions
TW202113957A (zh
Inventor
高橋信行
木下将毅
Original Assignee
日商荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商荏原製作所股份有限公司 filed Critical 日商荏原製作所股份有限公司
Publication of TW202113957A publication Critical patent/TW202113957A/zh
Application granted granted Critical
Publication of TWI848173B publication Critical patent/TWI848173B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
TW109129026A 2019-08-29 2020-08-26 研磨裝置及研磨方法 TWI848173B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-156921 2019-08-29
JP2019156921A JP7403998B2 (ja) 2019-08-29 2019-08-29 研磨装置および研磨方法

Publications (2)

Publication Number Publication Date
TW202113957A TW202113957A (zh) 2021-04-01
TWI848173B true TWI848173B (zh) 2024-07-11

Family

ID=74674667

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109129026A TWI848173B (zh) 2019-08-29 2020-08-26 研磨裝置及研磨方法

Country Status (6)

Country Link
US (2) US20220288742A1 (https=)
JP (1) JP7403998B2 (https=)
KR (1) KR102846970B1 (https=)
CN (1) CN114302789B (https=)
TW (1) TWI848173B (https=)
WO (1) WO2021039401A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021100317A1 (ja) * 2019-11-20 2021-05-27 株式会社ロジストラボ 光学素子の製造方法及び光学素子製造システム
JP7709281B2 (ja) * 2021-01-14 2025-07-16 株式会社荏原製作所 研磨装置、研磨方法、および基板の膜厚分布の可視化情報を出力する方法

Citations (5)

* Cited by examiner, † Cited by third party
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TW200507984A (en) * 2003-05-16 2005-03-01 Ebara Corp Substrate polishing apparatus
US20100112901A1 (en) * 2003-06-18 2010-05-06 Tetsuji Togawa Substrate polishing apparatus and substrate polishing method
US20170151647A1 (en) * 2010-08-30 2017-06-01 Applied Materials, Inc. Endpoint control of multiple substrate zones of varying thickness in chemical mechanical polishing
TW201910051A (zh) * 2017-08-08 2019-03-16 日商荏原製作所股份有限公司 基板研磨裝置及方法

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FR2782506B1 (fr) * 1998-08-18 2000-09-22 Labeille Ets Dispositif et procede de distribution de suspension abrasive pour le polissage mecanique de substrat
US6628397B1 (en) * 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
JP2001088021A (ja) 1999-09-22 2001-04-03 Speedfam Co Ltd 研磨終点検出機構付き研磨装置
JP3854056B2 (ja) * 1999-12-13 2006-12-06 株式会社荏原製作所 基板膜厚測定方法、基板膜厚測定装置、基板処理方法及び基板処理装置
US6599765B1 (en) * 2001-12-12 2003-07-29 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
JP3878016B2 (ja) * 2001-12-28 2007-02-07 株式会社荏原製作所 基板研磨装置
US6913514B2 (en) * 2003-03-14 2005-07-05 Ebara Technologies, Inc. Chemical mechanical polishing endpoint detection system and method
US7101257B2 (en) * 2003-05-21 2006-09-05 Ebara Corporation Substrate polishing apparatus
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JP4292179B2 (ja) * 2005-10-27 2009-07-08 株式会社ナノテム 砥石
JP2011000647A (ja) * 2009-06-16 2011-01-06 Ebara Corp 研磨監視方法
JP5980476B2 (ja) * 2010-12-27 2016-08-31 株式会社荏原製作所 ポリッシング装置およびポリッシング方法
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JP5896625B2 (ja) * 2011-06-02 2016-03-30 株式会社荏原製作所 研磨装置に使用される研磨パッドの研磨面を監視する方法および装置
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JP6404172B2 (ja) * 2015-04-08 2018-10-10 株式会社荏原製作所 膜厚測定方法、膜厚測定装置、研磨方法、および研磨装置
JP6357260B2 (ja) * 2016-09-30 2018-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
KR102652045B1 (ko) * 2017-01-11 2024-03-29 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
JP7023062B2 (ja) 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP6948868B2 (ja) 2017-07-24 2021-10-13 株式会社荏原製作所 研磨装置および研磨方法
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JP7197999B2 (ja) * 2018-05-11 2022-12-28 キオクシア株式会社 研磨装置および研磨パッド
JP7316785B2 (ja) * 2018-12-26 2023-07-28 株式会社荏原製作所 光学式膜厚測定システムの洗浄方法
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030104761A1 (en) * 1998-11-02 2003-06-05 Applied Materials, Inc., A Delaware Corporation Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
TW200507984A (en) * 2003-05-16 2005-03-01 Ebara Corp Substrate polishing apparatus
US20100112901A1 (en) * 2003-06-18 2010-05-06 Tetsuji Togawa Substrate polishing apparatus and substrate polishing method
US20170151647A1 (en) * 2010-08-30 2017-06-01 Applied Materials, Inc. Endpoint control of multiple substrate zones of varying thickness in chemical mechanical polishing
TW201910051A (zh) * 2017-08-08 2019-03-16 日商荏原製作所股份有限公司 基板研磨裝置及方法

Also Published As

Publication number Publication date
US20220288742A1 (en) 2022-09-15
JP2021030408A (ja) 2021-03-01
KR20220049596A (ko) 2022-04-21
US20260054345A1 (en) 2026-02-26
KR102846970B1 (ko) 2025-08-18
JP7403998B2 (ja) 2023-12-25
TW202113957A (zh) 2021-04-01
CN114302789A (zh) 2022-04-08
WO2021039401A1 (ja) 2021-03-04
CN114302789B (zh) 2024-06-25

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