TWI846780B - 用於離子束角的調變的殼體、系統及方法 - Google Patents

用於離子束角的調變的殼體、系統及方法 Download PDF

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Publication number
TWI846780B
TWI846780B TW108145679A TW108145679A TWI846780B TW I846780 B TWI846780 B TW I846780B TW 108145679 A TW108145679 A TW 108145679A TW 108145679 A TW108145679 A TW 108145679A TW I846780 B TWI846780 B TW I846780B
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TW
Taiwan
Prior art keywords
electrodes
ion beam
angle
substrate
suppression
Prior art date
Application number
TW108145679A
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English (en)
Chinese (zh)
Other versions
TW202030766A (zh
Inventor
約瑟夫Ｃ 奧爾森
摩根 伊恩
拉特格 梅耶帝莫曼泰森
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美商應用材料股份有限公司
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/15—External mechanical adjustment of electron or ion optical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1478—Beam tilting means, i.e. for stereoscopy or for beam channelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
    • H01J2237/1507—Tilting or rocking beam around an axis substantially at an angle to optical axis dynamically, e.g. to obtain same impinging angle on whole area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Mechanical Engineering (AREA)
TW108145679A 2018-12-17 2019-12-13 用於離子束角的調變的殼體、系統及方法 TWI846780B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862780815P 2018-12-17 2018-12-17
US62/780,815 2018-12-17

Publications (2)

Publication Number Publication Date
TW202030766A TW202030766A (zh) 2020-08-16
TWI846780B true TWI846780B (zh) 2024-07-01

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW108145679A TWI846780B (zh) 2018-12-17 2019-12-13 用於離子束角的調變的殼體、系統及方法
TW108145767A TWI841643B (zh) 2018-12-17 2019-12-13 成角度的光柵的滾動ｋ向量的調變及光柵形成方法
TW113120420A TWI921809B (zh) 2018-12-17 2019-12-13 利用具有不同傾斜角的光柵的光學設備

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW108145767A TWI841643B (zh) 2018-12-17 2019-12-13 成角度的光柵的滾動ｋ向量的調變及光柵形成方法
TW113120420A TWI921809B (zh) 2018-12-17 2019-12-13 利用具有不同傾斜角的光柵的光學設備

Country Status (7)

Country Link
US (4) US11456152B2 (enExample)
EP (2) EP3899607A4 (enExample)
JP (3) JP7417611B2 (enExample)
KR (3) KR102849594B1 (enExample)
CN (2) CN113195151B (enExample)
TW (3) TWI846780B (enExample)
WO (2) WO2020131398A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10302826B1 (en) 2018-05-30 2019-05-28 Applied Materials, Inc. Controlling etch angles by substrate rotation in angled etch tools
EP3899607A4 (en) 2018-12-17 2023-03-01 Applied Materials, Inc. MODULATION OF ROLLING K-VECTORS OF ANGULAR GRIDS
US11487058B2 (en) 2020-08-13 2022-11-01 Applied Materials, Inc. Method for manufacturing optical device structures
CN112394436B (zh) * 2020-11-25 2021-07-06 中国科学院上海光学精密机械研究所 1064纳米波段的非对称结构全介质反射式合束光栅
EP4416540A4 (en) * 2021-10-15 2025-08-13 Applied Materials Inc MULTILAYER TRANSMISSION STRUCTURES FOR WAVEGUIDE DISPLAY DEVICE
US12674927B2 (en) 2022-04-20 2026-07-07 Applied Materials, Inc. Method for roughness reduction in manufacturing optical device structures
US12687776B2 (en) 2023-04-24 2026-07-21 Tel Manufacturing And Engineering Of America, Inc. Optical elements patterning
TW202544502A (zh) 2024-02-16 2025-11-16 美商應用材料股份有限公司 用於獨立控制虛擬影像與世界漏角度的稜鏡

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030146707A1 (en) * 2002-01-11 2003-08-07 Goldberg Richard David Ion beam generator
US20090236547A1 (en) * 2008-03-18 2009-09-24 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
TW201532114A (zh) * 2013-12-23 2015-08-16 Varian Semiconductor Equipment 控制提供基板的離子束的處理裝置與方法
US20150255243A1 (en) * 2014-03-07 2015-09-10 Applied Materials, Inc. Grazing angle plasma processing for modifying a substrate surface
US20160035539A1 (en) * 2014-07-30 2016-02-04 Lauri SAINIEMI Microfabrication
US20170053797A1 (en) * 2014-04-10 2017-02-23 Applied Materials, Inc. Selective atomic layer deposition process utilizing patterned self assembled monolayers for 3d structure semiconductor applications

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0059304B1 (en) 1978-07-18 1985-10-23 Nippon Telegraph And Telephone Corporation A method of manufacturing a curved diffraction grating structure
US5116461A (en) * 1991-04-22 1992-05-26 Motorola, Inc. Method for fabricating an angled diffraction grating
GB9515090D0 (en) * 1995-07-21 1995-09-20 Applied Materials Inc An ion beam apparatus
US6821457B1 (en) * 1998-07-29 2004-11-23 Science Applications International Corporation Electrically switchable polymer-dispersed liquid crystal materials including switchable optical couplers and reconfigurable optical interconnects
JP2000100758A (ja) * 1998-09-18 2000-04-07 Canon Inc ビーム描画装置及びパターン形成方法
WO2001001438A1 (en) 1999-06-23 2001-01-04 Applied Materials, Inc. Ion beam generation apparatus
US6635880B1 (en) * 1999-10-05 2003-10-21 Varian Semiconductor Equipment Associates, Inc. High transmission, low energy beamline architecture for ion implanter
JP4830188B2 (ja) * 2000-08-31 2011-12-07 凸版印刷株式会社 光拡散体およびそれを用いた表示装置
JP2002150960A (ja) 2000-11-14 2002-05-24 New Japan Radio Co Ltd イオンビーム発生装置
US20030197133A1 (en) * 2002-04-23 2003-10-23 Turner Norman L. Method and apparatus for scanning a workpiece in a vacuum chamber
JP2005004068A (ja) * 2003-06-13 2005-01-06 Dainippon Printing Co Ltd スラント凹凸パターンの形成方法及びスラント凹凸パターンを有する基板
TWM250942U (en) * 2003-07-17 2004-11-21 Yenmost Entpr Co Ltd A gyroscopic yarn guide bracket's yarn guide tube
US7868305B2 (en) * 2005-03-16 2011-01-11 Varian Semiconductor Equipment Associates, Inc. Technique for ion beam angle spread control
US7675047B2 (en) * 2005-11-15 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Technique for shaping a ribbon-shaped ion beam
JP5266059B2 (ja) * 2005-11-18 2013-08-21 ナノコンプ オイ リミテッド 回折格子の製造方法
US8143604B2 (en) * 2006-03-31 2012-03-27 Varian Semiconductor Equipment Associates, Inc. Insulator system for a terminal structure of an ion implantation system
US8169703B1 (en) * 2006-09-06 2012-05-01 Lightsmyth Technologies Inc. Monolithic arrays of diffraction gratings
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
EP2095171A4 (en) * 2006-12-14 2009-12-30 Nokia Corp DISPLAY DEVICE HAVING TWO OPERATING MODES
CN100520703C (zh) * 2007-09-18 2009-07-29 北大方正集团有限公司 一种光栅化处理的方法及装置
US7767986B2 (en) * 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
EP2443491B1 (en) * 2009-06-16 2020-03-04 Koninklijke Philips N.V. Tilted gratings and method for production of tilted gratings
US8129695B2 (en) 2009-12-28 2012-03-06 Varian Semiconductor Equipment Associates, Inc. System and method for controlling deflection of a charged particle beam within a graded electrostatic lens
US8373427B2 (en) * 2010-02-10 2013-02-12 Skyworks Solutions, Inc. Electron radiation monitoring system to prevent gold spitting and resist cross-linking during evaporation
US8519353B2 (en) 2010-12-29 2013-08-27 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam
KR101864164B1 (ko) 2011-05-18 2018-06-04 삼성전자주식회사 노광 시스템과, 이 시스템으로 제조되는 포토마스크 및 웨이퍼
JP6271235B2 (ja) * 2013-01-24 2018-01-31 キヤノンアネルバ株式会社 フィンｆｅｔの製造方法およびデバイスの製造方法
US9514916B2 (en) * 2013-03-15 2016-12-06 Varian Semiconductor Equipment Associates, Inc. Wafer platen thermosyphon cooling system
CN103226215A (zh) * 2013-04-19 2013-07-31 中国科学院半导体研究所 具有宽度周期性渐变表面的全息光栅制备方法
JP6257411B2 (ja) * 2014-03-27 2018-01-10 住友重機械イオンテクノロジー株式会社 イオン注入装置、最終エネルギーフィルター、及びイオン注入方法
US20160033784A1 (en) 2014-07-30 2016-02-04 Tapani Levola Optical Components
GB2529003B (en) * 2014-08-03 2020-08-26 Wave Optics Ltd Optical device
US10825652B2 (en) * 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US10670862B2 (en) * 2015-07-02 2020-06-02 Microsoft Technology Licensing, Llc Diffractive optical elements with asymmetric profiles
US10007117B2 (en) * 2015-09-10 2018-06-26 Vuzix Corporation Imaging light guide with reflective turning array
US9697988B2 (en) * 2015-10-14 2017-07-04 Advanced Ion Beam Technology, Inc. Ion implantation system and process
US9791696B2 (en) * 2015-11-10 2017-10-17 Microsoft Technology Licensing, Llc Waveguide gratings to improve intensity distributions
CN105643084B (zh) * 2016-01-13 2018-05-29 东莞市富佳机械设备有限公司 智能穿戴网膜焊接、熔接工艺
US10067347B2 (en) * 2016-04-13 2018-09-04 Microsoft Technology Licensing, Llc Waveguides with improved intensity distributions
US9885870B2 (en) * 2016-04-25 2018-02-06 Microsoft Technology Licensing, Llc Diffractive optical elements with analog modulations and switching
DE102016111998B4 (de) * 2016-06-30 2024-01-18 Infineon Technologies Ag Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen
TW201825932A (zh) * 2016-10-13 2018-07-16 美商亞克尼亞全像攝影有限責任公司 光瞳等化
KR102673632B1 (ko) 2016-12-06 2024-06-13 삼성전자주식회사 이온 빔 추출을 위한 슬릿 구조체를 포함하는 이온 빔 장비, 및 이를 이용한 식각 방법 및 자기기억소자의 제조방법
CN106842397B (zh) * 2017-01-05 2020-07-17 苏州苏大维格光电科技股份有限公司 一种树脂全息波导镜片及其制备方法、及三维显示装置
KR102564357B1 (ko) * 2017-01-05 2023-08-04 매직 립, 인코포레이티드 플라즈마 에칭에 의한 고굴절률 유리들의 패터닝
US10416468B2 (en) * 2017-03-28 2019-09-17 The Charles Stark Draper Laboratory, Inc. Light field generator devices with series output couplers
WO2019036682A1 (en) 2017-08-18 2019-02-21 Modernatx, Inc. RNA VARIANTS POLYMERASE
US10074514B1 (en) 2017-09-08 2018-09-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for improved ion beam current
US10468224B2 (en) 2017-12-21 2019-11-05 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling ion beam properties using energy filter
US10302826B1 (en) 2018-05-30 2019-05-28 Applied Materials, Inc. Controlling etch angles by substrate rotation in angled etch tools
US10955606B2 (en) * 2018-05-30 2021-03-23 Applied Materials, Inc. Method of imprinting tilt angle light gratings
EP3899607A4 (en) 2018-12-17 2023-03-01 Applied Materials, Inc. MODULATION OF ROLLING K-VECTORS OF ANGULAR GRIDS

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030146707A1 (en) * 2002-01-11 2003-08-07 Goldberg Richard David Ion beam generator
US20090236547A1 (en) * 2008-03-18 2009-09-24 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
TW201532114A (zh) * 2013-12-23 2015-08-16 Varian Semiconductor Equipment 控制提供基板的離子束的處理裝置與方法
US20150255243A1 (en) * 2014-03-07 2015-09-10 Applied Materials, Inc. Grazing angle plasma processing for modifying a substrate surface
US20170053797A1 (en) * 2014-04-10 2017-02-23 Applied Materials, Inc. Selective atomic layer deposition process utilizing patterned self assembled monolayers for 3d structure semiconductor applications
US20160035539A1 (en) * 2014-07-30 2016-02-04 Lauri SAINIEMI Microfabrication

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Publication number Publication date
JP2024122990A (ja) 2024-09-10
TW202030766A (zh) 2020-08-16
JP7417611B2 (ja) 2024-01-18
TW202037932A (zh) 2020-10-16
JP2022514238A (ja) 2022-02-10
KR20210094103A (ko) 2021-07-28
US12106935B2 (en) 2024-10-01
EP3899607A1 (en) 2021-10-27
KR20250133452A (ko) 2025-09-05
US20200194228A1 (en) 2020-06-18
KR102717774B1 (ko) 2024-10-15
KR102849594B1 (ko) 2025-08-21
EP3899607A4 (en) 2023-03-01
EP3898068A1 (en) 2021-10-27
TWI841643B (zh) 2024-05-11
JP2022512366A (ja) 2022-02-03
TW202439365A (zh) 2024-10-01
US20210027985A1 (en) 2021-01-28
CN113195151A (zh) 2021-07-30
US20200194227A1 (en) 2020-06-18
US11670482B2 (en) 2023-06-06
US11367589B2 (en) 2022-06-21
KR20210094104A (ko) 2021-07-28
CN113167948A (zh) 2021-07-23
US20230260746A1 (en) 2023-08-17
EP3898068A4 (en) 2022-11-23
TWI921809B (zh) 2026-04-11
WO2020131394A1 (en) 2020-06-25
US11456152B2 (en) 2022-09-27
WO2020131398A1 (en) 2020-06-25
JP7494179B2 (ja) 2024-06-03
CN113195151B (zh) 2024-04-16

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