JP7494179B2 - 傾斜回折格子のローリングkベクトルの調整 - Google Patents
傾斜回折格子のローリングkベクトルの調整 Download PDFInfo
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- 238000005096 rolling process Methods 0.000 title description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 120
- 239000000758 substrate Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 41
- 230000001629 suppression Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 description 46
- 238000005530 etching Methods 0.000 description 24
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RTRWPDUMRZBWHZ-UHFFFAOYSA-N germanium niobium Chemical compound [Ge].[Nb] RTRWPDUMRZBWHZ-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1478—Beam tilting means, i.e. for stereoscopy or for beam channelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/15—External mechanical adjustment of electron or ion optical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
- H01J2237/1507—Tilting or rocking beam around an axis substantially at an angle to optical axis dynamically, e.g. to obtain same impinging angle on whole area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3151—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
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- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Mechanical Engineering (AREA)
Description
[0002] 異なる傾斜角を有する回折格子を基板上に形成するため、傾斜エッチングシステムが使用される。傾斜エッチングシステムは、イオンビーム源を収納するイオンビームチャンバを含む。イオンビーム源は、リボンビーム、スポットビーム、またはフル基板サイズビームなどのイオンビームを生成するように構成される。イオンビームチャンバは、基板の面法線に対して最適化された角度にイオンビームを向けるように構成される。最適化された角度を変更するには、イオンビームチャンバのハードウェア構成を再構成する必要がある。基板は、アクチュエータに連結されたプラテン上に保持される。アクチュエータは、基板がイオンビームチャンバの軸に対して傾斜した角度で位置決めされるよう、プラテンを傾けるように構成される。最適化された角度および傾斜角は、面法線に対するイオンビーム角をもたらす。
Claims (14)
- 回折格子形成の方法であって、前記方法は、
イオンビーム源から、x軸に沿った方向にイオンビームを発射させることと、
前記x軸に対してビーム角αの方向に前記イオンビームの方向を変化させて、基板に向けて前記イオンビームを投射することとを含み、
前記基板の上に形成される回折格子の第1の部分は、前記イオンビームと、前記第1の部分に接触する前記イオンビームによって形成される1つまたは複数の第1のフィンの第1の回折格子ベクトルとの間の第1の回転角φ1に位置決めされ、
前記第1の回転角φ1は、第1の傾斜角θ’1を有する前記1つまたは複数の第1のフィンを形成するように選択され、
前記基板の上に形成される前記回折格子の第2の部分は、前記イオンビームと、前記第2の部分に接触する前記イオンビームによって形成される1つまたは複数の第2のフィンの第2の回折格子ベクトルとの間の第2の回転角φ2に配置され、
前記第2の回転角φ2は、前記第1の傾斜角θ’1とは異なる第2の傾斜角θ’2を有する前記回折格子の前記1つまたは複数の第2のフィンを形成するように選択される、方法。 - 前記1つまたは複数の第1のフィンおよび前記1つまたは複数の第2のフィンを形成するための前記ビーム角αは同じである、請求項1に記載の方法。
- 前記1つまたは複数の第1のフィンおよび前記1つまたは複数の第2のフィンを形成することは、前記基板を支持するプラテンを、前記x軸の周りに回転させることを含む、請求項2に記載の方法。
- 前記1つまたは複数の第1のフィンおよび前記1つまたは複数の第2のフィンを形成することは、前記基板を支持するプラテンを、前記x軸に対して垂直なy方向および/または前記x軸と前記y方向とに対して垂直なz方向に移動させることを含む、請求項1に記載の方法。
- 前記1つまたは複数の第1のフィンおよび前記1つまたは複数の第2のフィンを形成することは、前記基板を支持するプラテンを、前記プラテンの平面が前記x軸に対して傾斜角βをなすように傾斜させることを含む、請求項1に記載の方法。
- 前記イオンビームの前記方向を変化させることは、前記イオンビームに対して1つまたは複数の電極を移動させることを含む、請求項1に記載の方法。
- 前記1つまたは複数の電極が、
複数の入口電極と、
前記入口電極の下流に位置決めされた複数の抑制電極と、
前記抑制電極の下流に位置決めされた複数の出口電極と、
を備える、請求項6に記載の方法。 - 前記イオンビームのビーム経路に沿って位置決めされた複数の電極への電圧を変化させることによって、前記ビーム角αを、第1のビーム角αから第2のビーム角αに変化させることをさらに含む、請求項1に記載の方法。
- 回折格子形成の方法であって、前記方法は、
イオンビーム源から、x軸に沿った方向にイオンビームを発射させることと、
前記x軸に対してビーム角αの方向に前記イオンビームの方向を変化させて、基板に向けて前記イオンビームを投射することであって、前記基板の上に形成される回折格子の第1の部分は、前記イオンビームと、前記第1の部分に接触する前記イオンビームによって形成される1つまたは複数の第1のフィンの第1の回折格子ベクトルとの間の第1の回転角φ1に位置決めされ、前記第1の回転角φ1は、第1の傾斜角θ’1を有する前記1つまたは複数の第1のフィンを形成するように選択される、前記イオンビームを投射することと、
前記基板の上に形成される前記回折格子の第2の部分が、前記イオンビームと、前記第2の部分に接触する前記イオンビームによって形成される1つまたは複数の第2のフィンの第2の回折格子ベクトルとの間の第2の回転角φ2に位置決めされるように、前記基板を前記x軸の周りに回転させることであって、前記第2の回転角φ2は、前記第1の傾斜角θ’1とは異なる第2の傾斜角θ’2を有する前記回折格子の前記1つまたは複数の第2のフィンを形成するように選択される、前記基板を回転することと、
を含む方法。 - 前記ビーム角αは静止したままである、請求項9に記載の方法。
- 前記1つまたは複数の第1のフィンおよび前記1つまたは複数の第2のフィンを形成することは、前記基板を支持するプラテンを、前記x軸に対して垂直なy方向および/または前記x軸と前記y方向とに対して垂直なz方向に移動させることを含む、請求項9に記載の方法。
- 前記1つまたは複数の第1のフィンおよび前記1つまたは複数の第2のフィンを形成することは、前記基板を支持するプラテンを、前記プラテンの平面が前記x軸に対して傾斜角βをなすように傾斜させることを含む、請求項9に記載の方法。
- 前記傾斜角βを、第1の傾斜角βから第2の傾斜角βに変化させることをさらに含む、請求項12に記載の方法。
- 前記ビーム角αは静止したままである、請求項13に記載の方法。
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US201862780815P | 2018-12-17 | 2018-12-17 | |
US62/780,815 | 2018-12-17 | ||
PCT/US2019/064592 WO2020131394A1 (en) | 2018-12-17 | 2019-12-05 | Modulation of rolling k vectors of angled gratings |
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EP3898068A4 (en) | 2022-11-23 |
EP3898068A1 (en) | 2021-10-27 |
WO2020131394A1 (en) | 2020-06-25 |
TW202037932A (zh) | 2020-10-16 |
JP7417611B2 (ja) | 2024-01-18 |
CN113195151B (zh) | 2024-04-16 |
CN113167948A (zh) | 2021-07-23 |
US11670482B2 (en) | 2023-06-06 |
EP3899607A4 (en) | 2023-03-01 |
KR20210094104A (ko) | 2021-07-28 |
TW202030766A (zh) | 2020-08-16 |
JP2022512366A (ja) | 2022-02-03 |
US11367589B2 (en) | 2022-06-21 |
US20210027985A1 (en) | 2021-01-28 |
US20200194227A1 (en) | 2020-06-18 |
US20200194228A1 (en) | 2020-06-18 |
EP3899607A1 (en) | 2021-10-27 |
JP2022514238A (ja) | 2022-02-10 |
US11456152B2 (en) | 2022-09-27 |
WO2020131398A1 (en) | 2020-06-25 |
CN113195151A (zh) | 2021-07-30 |
KR20210094103A (ko) | 2021-07-28 |
US20230260746A1 (en) | 2023-08-17 |
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