JP2022514238A - 傾斜回折格子のローリングkベクトルの調整 - Google Patents
傾斜回折格子のローリングkベクトルの調整 Download PDFInfo
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- 239000013598 vector Substances 0.000 title claims description 19
- 238000005096 rolling process Methods 0.000 title claims description 14
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 230000001629 suppression Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 abstract description 46
- 238000000034 method Methods 0.000 abstract description 27
- 238000005530 etching Methods 0.000 abstract description 25
- 238000010586 diagram Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 11
- 238000010168 coupling process Methods 0.000 description 11
- 238000005859 coupling reaction Methods 0.000 description 11
- 238000000605 extraction Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RTRWPDUMRZBWHZ-UHFFFAOYSA-N germanium niobium Chemical compound [Ge].[Nb] RTRWPDUMRZBWHZ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
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- G02B5/00—Optical elements other than lenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
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- H—ELECTRICITY
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
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- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
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- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
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- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
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- G02—OPTICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
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- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
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Abstract
Description
[0002] 異なる傾斜角を有する回折格子を基板上に形成するため、傾斜エッチングシステムが使用される。傾斜エッチングシステムは、イオンビーム源を収納するイオンビームチャンバを含む。イオンビーム源は、リボンビーム、スポットビーム、またはフル基板サイズビームなどのイオンビームを生成するように構成される。イオンビームチャンバは、基板の面法線に対して最適化された角度にイオンビームを向けるように構成される。最適化された角度を変更するには、イオンビームチャンバのハードウェア構成を再構成する必要がある。基板は、アクチュエータに連結されたプラテン上に保持される。アクチュエータは、基板がイオンビームチャンバの軸に対して傾斜した角度で位置決めされるよう、プラテンを傾けるように構成される。最適化された角度および傾斜角は、面法線に対するイオンビーム角をもたらす。
Claims (15)
- ビーム角度でイオンビームを投射するように動作可能なイオンビーム源と、
前記イオンビーム源の下流に位置決めされた電極セットと、を備えるイオンビームハウジングであって、
前記電極セットは、
前記イオンビーム源のビーム経路に沿って、かつその周囲に位置決めされた複数の電極を備え、
前記複数の電極の各電極は、それぞれの電圧源に連結され、
前記複数の電極の各電極は、それぞれのアクチュエータに連結され、
各アクチュエータおよび電圧源と連通しているコントローラは、前記ビーム経路に対する前記複数の電極のうちの少なくとも1つの位置を調整すること、および、前記複数の電極のうちの少なくとも1つに供給される電圧を調整すること、のうちの少なくとも1つによって、前記ビーム角度を調整するように動作可能である、イオンビームハウジング。 - 前記複数の電極が、
複数の入口電極と、
前記入口電極の下流に位置決めされた複数の抑制電極と、
前記抑制電極の下流に位置決めされた複数の出口電極と、
をさらに備える、請求項1に記載のイオンビームハウジング。 - 前記入口電極、前記抑制電極、および前記出口電極の各々が、導電性プレートを備える、請求項2に記載のイオンビームハウジング。
- 前記入口電極、前記抑制電極、および前記出口電極の各々は、専用のアクチュエータに連結される、請求項2に記載のイオンビームハウジング。
- 前記入口電極の各々、前記抑制電極の各々、および前記出口電極の各々が、互いに電気的に連結された2つの導電性プレートを備える、請求項2に記載のイオンビームハウジング。
- 前記複数の電極の各々は、ローリングkベクトルを有する回折格子を形成するために、前記電極のうちの1つまたは複数への電圧を変化させるコントローラと連通している、請求項1に記載のイオンビームハウジング。
- 前記複数の電極の各々は、ローリングkベクトルを有する回折格子を形成するために、各電極の動きを制御するコントローラと連通している、請求項1に記載のイオンビームハウジング。
- 連通している真空ポンプをさらに備える、請求項7に記載のイオンビームハウジング。
- 前記複数の電極は、前記イオンビームハウジングから電気的に絶縁されている、請求項7に記載のイオンビームハウジング。
- 基板の上に回折格子を形成するためのチャンバであって、前記チャンバは、
プラテンと、
前記プラテンにビーム角度でイオンビームを投射するように動作可能なイオンビーム源と、
前記イオンビーム源の下流に位置決めされた電極セットとを備え、前記電極セットは、
前記イオンビーム源のビーム経路に沿って、かつその周囲に位置決めされた複数の電極を備え、
前記複数の電極の各電極はそれぞれの電圧源に連結され、
前記複数の電極の各電極は、それぞれのアクチュエータに連結され、
各アクチュエータおよび電圧源と連通するコントローラは、前記ビーム経路に対する前記複数の電極のうちの少なくとも1つの位置を調整すること、および、前記複数の電極のうちの少なくとも1つに供給される電圧を調整すること、のうちの少なくとも1つによって、前記ビーム角度を調整するように動作可能である、チャンバ。 - 前記アクチュエータは、前記イオンビームに対してy方向およびz方向に移動することを含む走査運動で前記プラテンを移動させる、請求項10に記載のチャンバ。
- 前記アクチュエータは、前記イオンビームのx軸に対して前記プラテンを傾けるように動作可能である、請求項10に記載のチャンバ。
- 前記イオンビーム源は、少なくとも2つの可動電極が内部に配置された光学デバイスを含む、請求項10に記載のチャンバ。
- 少なくとも2つの可動電極が、
複数の入口電極と、
前記入口電極の下流に位置決めされた複数の抑制電極と、
前記抑制電極の下流に位置決めされた複数の出口電極と、
を備える、請求項10に記載のチャンバ。 - 前記入口電極、前記抑制電極、および前記出口電極の各々は、導電性プレートを備える、請求項14に記載のチャンバ。
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US201862780815P | 2018-12-17 | 2018-12-17 | |
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PCT/US2019/064601 WO2020131398A1 (en) | 2018-12-17 | 2019-12-05 | Modulation of rolling k vectors of angled gratings |
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CN112394436B (zh) * | 2020-11-25 | 2021-07-06 | 中国科学院上海光学精密机械研究所 | 1064纳米波段的非对称结构全介质反射式合束光栅 |
US20230118081A1 (en) * | 2021-10-15 | 2023-04-20 | Applied Materials, Inc. | Multilayer transmission structures for waveguide display |
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US20210027985A1 (en) | 2021-01-28 |
EP3898068A1 (en) | 2021-10-27 |
EP3898068A4 (en) | 2022-11-23 |
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JP7417611B2 (ja) | 2024-01-18 |
JP2022512366A (ja) | 2022-02-03 |
EP3899607A1 (en) | 2021-10-27 |
KR20210094104A (ko) | 2021-07-28 |
CN113167948A (zh) | 2021-07-23 |
US20200194227A1 (en) | 2020-06-18 |
CN113195151A (zh) | 2021-07-30 |
WO2020131394A1 (en) | 2020-06-25 |
TW202030766A (zh) | 2020-08-16 |
US20200194228A1 (en) | 2020-06-18 |
WO2020131398A1 (en) | 2020-06-25 |
US11670482B2 (en) | 2023-06-06 |
CN113195151B (zh) | 2024-04-16 |
EP3899607A4 (en) | 2023-03-01 |
KR20210094103A (ko) | 2021-07-28 |
TW202037932A (zh) | 2020-10-16 |
US11456152B2 (en) | 2022-09-27 |
US11367589B2 (en) | 2022-06-21 |
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