TWI846619B - 磁性穿隧接合結構及其製造方法 - Google Patents

磁性穿隧接合結構及其製造方法 Download PDF

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Publication number
TWI846619B
TWI846619B TW112138691A TW112138691A TWI846619B TW I846619 B TWI846619 B TW I846619B TW 112138691 A TW112138691 A TW 112138691A TW 112138691 A TW112138691 A TW 112138691A TW I846619 B TWI846619 B TW I846619B
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Taiwan
Prior art keywords
layer
pinning
stack
chromium
seed
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TW112138691A
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English (en)
Chinese (zh)
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TW202405802A (zh
Inventor
薛林
志康 程
汪榮軍
瑪亨德拉 帕卡拉
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
TW112138691A 2018-05-08 2019-04-19 磁性穿隧接合結構及其製造方法 TWI846619B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862668559P 2018-05-08 2018-05-08
US62/668,559 2018-05-08
US16/351,850 2019-03-13
US16/351,850 US10944050B2 (en) 2018-05-08 2019-03-13 Magnetic tunnel junction structures and methods of manufacture thereof

Publications (2)

Publication Number Publication Date
TW202405802A TW202405802A (zh) 2024-02-01
TWI846619B true TWI846619B (zh) 2024-06-21

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TW112138691A TWI846619B (zh) 2018-05-08 2019-04-19 磁性穿隧接合結構及其製造方法
TW108113704A TWI821274B (zh) 2018-05-08 2019-04-19 磁性穿隧接合結構及其製造方法

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US (2) US10944050B2 (enExample)
JP (2) JP7507693B2 (enExample)
KR (2) KR20250090373A (enExample)
CN (1) CN112166509B (enExample)
TW (2) TWI846619B (enExample)
WO (1) WO2019217014A1 (enExample)

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US10957849B2 (en) 2018-05-24 2021-03-23 Applied Materials, Inc. Magnetic tunnel junctions with coupling-pinning layer lattice matching
US10910557B2 (en) 2018-09-14 2021-02-02 Applied Materials, Inc. Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device
CN113346006B (zh) * 2020-03-02 2023-03-21 上海磁宇信息科技有限公司 磁性隧道结结构及其磁性随机存储器
US20230039108A1 (en) * 2021-08-03 2023-02-09 Yimin Guo Perpendicular mtj element having a soft-magnetic adjacent layer and methods of making the same
US12022743B2 (en) * 2021-08-06 2024-06-25 Taiwan Semiconductor Manufacturing Company Ltd. Magnetic tunnel junction (MTJ) element and its fabrication process
US12382839B2 (en) 2022-01-07 2025-08-05 Samsung Electronics Co., Ltd. Magnetic tunneling junction device and memory device including the same

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JP2007142364A (ja) * 2005-10-19 2007-06-07 Toshiba Corp 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
US20090251829A1 (en) * 2008-04-02 2009-10-08 Headway Technologies, Inc. Seed layer for TMR or CPP-GMR sensor
US20100176470A1 (en) * 2009-01-14 2010-07-15 Magic Technologies, Inc. Novel free layer/capping layer for high performance mram mtj
US8922956B2 (en) * 2010-06-04 2014-12-30 Seagate Technology Llc Tunneling magneto-resistive sensors with buffer layers
JP2013149857A (ja) * 2012-01-20 2013-08-01 Renesas Electronics Corp 磁気抵抗効果素子及び磁気メモリ
TW201403597A (zh) * 2012-07-11 2014-01-16 Samsung Electronics Co Ltd 磁性隨機存取記憶體以及操作磁性隨機存取記憶體之方法
CN104282832A (zh) * 2013-07-03 2015-01-14 三星电子株式会社 磁性存储装置及其形成方法
US20160301000A1 (en) * 2013-11-18 2016-10-13 Sangyong Kim Magnetic Memory Devices Having Perpendicular Magnetic Tunnel Structures Therein
US20160141496A1 (en) * 2014-11-18 2016-05-19 Yongsung PARK Method and processing apparatus for fabricating a magnetic resistive random access memory device
US9236560B1 (en) * 2014-12-08 2016-01-12 Western Digital (Fremont), Llc Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy
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Publication number Publication date
KR20250090373A (ko) 2025-06-19
CN112166509A (zh) 2021-01-01
TWI821274B (zh) 2023-11-11
KR20200141528A (ko) 2020-12-18
US10944050B2 (en) 2021-03-09
US20190348600A1 (en) 2019-11-14
CN112166509B (zh) 2024-11-29
KR102819169B1 (ko) 2025-06-12
US20210193914A1 (en) 2021-06-24
WO2019217014A1 (en) 2019-11-14
JP2024150436A (ja) 2024-10-23
JP7507693B2 (ja) 2024-06-28
JP2021523569A (ja) 2021-09-02
US11552244B2 (en) 2023-01-10
TW202405802A (zh) 2024-02-01
TW201947589A (zh) 2019-12-16

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