TWI846299B - 使用半導體元件的記憶裝置 - Google Patents

使用半導體元件的記憶裝置 Download PDF

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Publication number
TWI846299B
TWI846299B TW112103500A TW112103500A TWI846299B TW I846299 B TWI846299 B TW I846299B TW 112103500 A TW112103500 A TW 112103500A TW 112103500 A TW112103500 A TW 112103500A TW I846299 B TWI846299 B TW I846299B
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TW
Taiwan
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layer
conductor layer
aforementioned
semiconductor
impurity region
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TW112103500A
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English (en)
Chinese (zh)
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TW202341424A (zh
Inventor
各務正一
作井康司
原田望
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新加坡商新加坡優尼山帝斯電子私人有限公司
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Publication of TW202341424A publication Critical patent/TW202341424A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
TW112103500A 2022-02-01 2023-02-01 使用半導體元件的記憶裝置 TWI846299B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2022/003747 WO2023148799A1 (ja) 2022-02-01 2022-02-01 半導体素子を用いたメモリ装置
WOPCT/JP2022/003747 2022-02-01

Publications (2)

Publication Number Publication Date
TW202341424A TW202341424A (zh) 2023-10-16
TWI846299B true TWI846299B (zh) 2024-06-21

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ID=87432994

Family Applications (1)

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TW112103500A TWI846299B (zh) 2022-02-01 2023-02-01 使用半導體元件的記憶裝置

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US (1) US20230247820A1 (https=)
JP (1) JP7705670B2 (https=)
TW (1) TWI846299B (https=)
WO (1) WO2023148799A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022269890A1 (ja) * 2021-06-25 2022-12-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置の製造方法
WO2023281728A1 (ja) * 2021-07-09 2023-01-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2024214180A1 (ja) * 2023-04-11 2024-10-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
JP7762991B1 (ja) 2024-06-03 2025-10-31 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200943536A (en) * 2008-04-10 2009-10-16 Hynix Semiconductor Inc Semiconductor device having vertical pillar transistors and method for manufacturing the same
US20100182853A1 (en) * 2000-08-17 2010-07-22 Kabushiki Kaisha Toshiba Semiconductor Memory Device Having a Floating Storage Bulk Region Capable of Holding/Emitting Excessive Majority Carriers
US20190237581A1 (en) * 2018-01-31 2019-08-01 Toshiba Memory Corporation Transistor, semiconductor memory device, and method of manufacturing transistor
US20200135905A1 (en) * 2018-10-24 2020-04-30 Gachon University Of Industry-Academic Cooperation Foundation One-transistor dram cell device having quantum well structure
TWI747465B (zh) * 2020-08-28 2021-11-21 旺宏電子股份有限公司 記憶體結構

Family Cites Families (9)

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US5340754A (en) * 1992-09-02 1994-08-23 Motorla, Inc. Method for forming a transistor having a dynamic connection between a substrate and a channel region
JPH09321296A (ja) * 1996-05-27 1997-12-12 Toyota Central Res & Dev Lab Inc 半導体装置およびその製造方法
JP3808763B2 (ja) * 2001-12-14 2006-08-16 株式会社東芝 半導体メモリ装置およびその製造方法
US6784076B2 (en) * 2002-04-08 2004-08-31 Micron Technology, Inc. Process for making a silicon-on-insulator ledge by implanting ions from silicon source
KR100618698B1 (ko) * 2004-06-21 2006-09-08 주식회사 하이닉스반도체 반도체 소자 및 그의 제조방법
JP5078338B2 (ja) * 2006-12-12 2012-11-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7919800B2 (en) * 2007-02-26 2011-04-05 Micron Technology, Inc. Capacitor-less memory cells and cell arrays
KR101944535B1 (ko) * 2012-03-28 2019-01-31 삼성전자주식회사 반도체 기억 소자
KR102529073B1 (ko) * 2015-04-29 2023-05-08 제노 세미컨덕터, 인크. 백바이어스를 이용한 드레인 전류가 향상된 트랜지스터 및 메모리 셀

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100182853A1 (en) * 2000-08-17 2010-07-22 Kabushiki Kaisha Toshiba Semiconductor Memory Device Having a Floating Storage Bulk Region Capable of Holding/Emitting Excessive Majority Carriers
TW200943536A (en) * 2008-04-10 2009-10-16 Hynix Semiconductor Inc Semiconductor device having vertical pillar transistors and method for manufacturing the same
US20190237581A1 (en) * 2018-01-31 2019-08-01 Toshiba Memory Corporation Transistor, semiconductor memory device, and method of manufacturing transistor
US20200135905A1 (en) * 2018-10-24 2020-04-30 Gachon University Of Industry-Academic Cooperation Foundation One-transistor dram cell device having quantum well structure
TWI747465B (zh) * 2020-08-28 2021-11-21 旺宏電子股份有限公司 記憶體結構

Also Published As

Publication number Publication date
WO2023148799A1 (ja) 2023-08-10
TW202341424A (zh) 2023-10-16
US20230247820A1 (en) 2023-08-03
JPWO2023148799A1 (https=) 2023-08-10
JP7705670B2 (ja) 2025-07-10

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