TWI846013B - 電子束檢查裝置 - Google Patents
電子束檢查裝置 Download PDFInfo
- Publication number
- TWI846013B TWI846013B TW111130758A TW111130758A TWI846013B TW I846013 B TWI846013 B TW I846013B TW 111130758 A TW111130758 A TW 111130758A TW 111130758 A TW111130758 A TW 111130758A TW I846013 B TWI846013 B TW I846013B
- Authority
- TW
- Taiwan
- Prior art keywords
- electron beam
- substrate
- metal film
- inspection device
- support pin
- Prior art date
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 59
- 238000007689 inspection Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000012212 insulator Substances 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 12
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 description 18
- 238000013461 design Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 3
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AHGIVYNZKJCSBA-UHFFFAOYSA-N [Ti].[Ag].[Cu] Chemical compound [Ti].[Ag].[Cu] AHGIVYNZKJCSBA-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004556 laser interferometry Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0475—Changing particle velocity decelerating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20235—Z movement or adjustment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-168233 | 2021-10-13 | ||
| JP2021168233A JP7647483B2 (ja) | 2021-10-13 | 2021-10-13 | 電子ビーム検査装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202331769A TW202331769A (zh) | 2023-08-01 |
| TWI846013B true TWI846013B (zh) | 2024-06-21 |
Family
ID=85797866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111130758A TWI846013B (zh) | 2021-10-13 | 2022-08-16 | 電子束檢查裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12261015B2 (enExample) |
| JP (1) | JP7647483B2 (enExample) |
| KR (1) | KR102835208B1 (enExample) |
| CN (1) | CN115963137A (enExample) |
| TW (1) | TWI846013B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023046921A (ja) * | 2021-09-24 | 2023-04-05 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム画像取得装置、マルチ電子ビーム検査装置、及びマルチ電子ビーム画像取得方法 |
| JP7647483B2 (ja) * | 2021-10-13 | 2025-03-18 | 株式会社ニューフレアテクノロジー | 電子ビーム検査装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190139739A1 (en) * | 2017-11-03 | 2019-05-09 | Nuflare Technology, Inc. | Individual beam detector for multiple beams, multi-beam irradiation apparatus, and individual beam detection method for multiple beams |
| TW202038284A (zh) * | 2018-12-04 | 2020-10-16 | 日商紐富來科技股份有限公司 | 多電子束檢查裝置 |
| US20210142978A1 (en) * | 2019-11-07 | 2021-05-13 | Nuflare Technology, Inc. | Electron beam inspection apparatus and electron beam inspection method |
| JP2021106108A (ja) * | 2019-12-26 | 2021-07-26 | 株式会社ニューフレアテクノロジー | 電子ビーム検査装置 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2753458A (en) * | 1954-04-12 | 1956-07-03 | Kazato Kenji | Electron microscope |
| US6512227B2 (en) | 1998-11-27 | 2003-01-28 | Hitachi, Ltd. | Method and apparatus for inspecting patterns of a semiconductor device with an electron beam |
| JP2000223542A (ja) | 1998-11-27 | 2000-08-11 | Hitachi Ltd | 電子ビ―ムを用いた検査方法及び検査装置 |
| US7220365B2 (en) * | 2001-08-13 | 2007-05-22 | New Qu Energy Ltd. | Devices using a medium having a high heat transfer rate |
| JP5417428B2 (ja) | 2009-02-27 | 2014-02-12 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡および試料保持方法 |
| JP2010272586A (ja) * | 2009-05-19 | 2010-12-02 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| US8368228B2 (en) * | 2009-10-19 | 2013-02-05 | Jeng-Jye Shau | Area efficient through-hole connections |
| US8709945B2 (en) * | 2011-01-26 | 2014-04-29 | Jeng-Jye Shau | Area efficient through-hole connections |
| JP2013239386A (ja) | 2012-05-16 | 2013-11-28 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| JP6139449B2 (ja) * | 2014-03-26 | 2017-05-31 | 株式会社アドバンテスト | ステージ装置および電子線装置 |
| TWI594288B (zh) * | 2016-03-14 | 2017-08-01 | 台灣電鏡儀器股份有限公司 | 電子顯微鏡 |
| JP6966255B2 (ja) * | 2017-08-10 | 2021-11-10 | 株式会社ニューフレアテクノロジー | 画像取得装置の光学系調整方法 |
| JP6966319B2 (ja) * | 2017-12-22 | 2021-11-17 | 株式会社ニューフレアテクノロジー | マルチビーム画像取得装置及びマルチビーム画像取得方法 |
| JP2019145304A (ja) * | 2018-02-20 | 2019-08-29 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置、荷電粒子ビーム装置のステージ駆動範囲制限方法およびプログラム |
| WO2019211123A1 (en) * | 2018-05-02 | 2019-11-07 | Asml Netherlands B.V. | E-beam apparatus |
| JP7198092B2 (ja) * | 2018-05-18 | 2022-12-28 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム照射装置、マルチ電子ビーム検査装置及びマルチ電子ビーム照射方法 |
| JP7057220B2 (ja) * | 2018-05-24 | 2022-04-19 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム画像取得装置及びマルチ電子ビーム光学系の位置決め方法 |
| JP7093242B2 (ja) | 2018-06-27 | 2022-06-29 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム画像取得装置 |
| JP2020085838A (ja) * | 2018-11-30 | 2020-06-04 | 株式会社ニューフレアテクノロジー | 電子ビーム検査装置 |
| TWI774157B (zh) * | 2019-12-27 | 2022-08-11 | 日商紐富來科技股份有限公司 | 帶電粒子束檢查裝置以及帶電粒子束檢查方法 |
| CN113764246B (zh) * | 2020-06-03 | 2025-04-18 | 宁波伯锐锶电子束科技有限公司 | 一种显微镜 |
| JP7573396B2 (ja) * | 2020-09-04 | 2024-10-25 | 株式会社ニューフレアテクノロジー | θステージ機構及び電子ビーム検査装置 |
| JP2023046921A (ja) * | 2021-09-24 | 2023-04-05 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム画像取得装置、マルチ電子ビーム検査装置、及びマルチ電子ビーム画像取得方法 |
| JP7647483B2 (ja) * | 2021-10-13 | 2025-03-18 | 株式会社ニューフレアテクノロジー | 電子ビーム検査装置 |
-
2021
- 2021-10-13 JP JP2021168233A patent/JP7647483B2/ja active Active
-
2022
- 2022-08-16 TW TW111130758A patent/TWI846013B/zh active
- 2022-08-31 US US17/823,604 patent/US12261015B2/en active Active
- 2022-09-16 KR KR1020220116827A patent/KR102835208B1/ko active Active
- 2022-10-13 CN CN202211251800.1A patent/CN115963137A/zh not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190139739A1 (en) * | 2017-11-03 | 2019-05-09 | Nuflare Technology, Inc. | Individual beam detector for multiple beams, multi-beam irradiation apparatus, and individual beam detection method for multiple beams |
| TW202038284A (zh) * | 2018-12-04 | 2020-10-16 | 日商紐富來科技股份有限公司 | 多電子束檢查裝置 |
| US20210142978A1 (en) * | 2019-11-07 | 2021-05-13 | Nuflare Technology, Inc. | Electron beam inspection apparatus and electron beam inspection method |
| JP2021106108A (ja) * | 2019-12-26 | 2021-07-26 | 株式会社ニューフレアテクノロジー | 電子ビーム検査装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202331769A (zh) | 2023-08-01 |
| KR102835208B1 (ko) | 2025-07-18 |
| KR20230052812A (ko) | 2023-04-20 |
| US20230113062A1 (en) | 2023-04-13 |
| CN115963137A (zh) | 2023-04-14 |
| US12261015B2 (en) | 2025-03-25 |
| JP7647483B2 (ja) | 2025-03-18 |
| JP2023058299A (ja) | 2023-04-25 |
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