TWI842889B - 圖像顯示裝置之製造方法及圖像顯示裝置 - Google Patents

圖像顯示裝置之製造方法及圖像顯示裝置 Download PDF

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Publication number
TWI842889B
TWI842889B TW109114867A TW109114867A TWI842889B TW I842889 B TWI842889 B TW I842889B TW 109114867 A TW109114867 A TW 109114867A TW 109114867 A TW109114867 A TW 109114867A TW I842889 B TWI842889 B TW I842889B
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TW
Taiwan
Prior art keywords
light
layer
insulating film
semiconductor layer
image display
Prior art date
Application number
TW109114867A
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English (en)
Chinese (zh)
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TW202101414A (zh
Inventor
秋元肇
Original Assignee
日商日亞化學工業股份有限公司
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Publication of TW202101414A publication Critical patent/TW202101414A/zh
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Publication of TWI842889B publication Critical patent/TWI842889B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies

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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW109114867A 2019-05-10 2020-05-05 圖像顯示裝置之製造方法及圖像顯示裝置 TWI842889B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-089679 2019-05-10
JP2019089679 2019-05-10

Publications (2)

Publication Number Publication Date
TW202101414A TW202101414A (zh) 2021-01-01
TWI842889B true TWI842889B (zh) 2024-05-21

Family

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Family Applications (1)

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TW109114867A TWI842889B (zh) 2019-05-10 2020-05-05 圖像顯示裝置之製造方法及圖像顯示裝置

Country Status (5)

Country Link
US (2) US12087895B2 (https=)
JP (1) JP7484078B2 (https=)
CN (1) CN113994485B (https=)
TW (1) TWI842889B (https=)
WO (1) WO2020230667A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102851311B1 (ko) * 2020-05-14 2025-08-28 삼성디스플레이 주식회사 표시 장치
CN116235305B (zh) 2020-11-25 2026-03-06 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
JP7684851B2 (ja) * 2021-06-29 2025-05-28 株式会社ジャパンディスプレイ 表示装置
TWI843136B (zh) * 2022-02-25 2024-05-21 友達光電股份有限公司 顯示面板與其製作方法
CN115425047B (zh) * 2022-08-26 2025-09-23 湖北长江新型显示产业创新中心有限公司 一种显示面板和显示装置
WO2025206044A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 発光装置および画像表示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180259570A1 (en) * 2017-01-23 2018-09-13 Tesoro Scientific, Inc. Light emitting diode (led) test apparatus and method of manufacture
CN109300932A (zh) * 2018-11-12 2019-02-01 严光能 Led显示器及其制作方法
WO2019053923A1 (ja) * 2017-09-13 2019-03-21 シャープ株式会社 Ｌｅｄユニット、画像表示素子およびその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
DE50313254D1 (de) 2002-05-10 2010-12-23 Zeiss Carl Smt Ag Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion
JP5171016B2 (ja) * 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
JP4917582B2 (ja) * 2008-07-25 2012-04-18 住友化学株式会社 アクティブマトリクス基板、ディスプレイパネル、表示装置およびアクティブマトリクス基板の製造方法
JP2010055070A (ja) * 2008-07-30 2010-03-11 Sumitomo Chemical Co Ltd 表示装置および表示装置の製造方法
JP5320270B2 (ja) * 2009-11-25 2013-10-23 株式会社沖データ 表示パネルの製造方法
JP5532908B2 (ja) 2009-12-22 2014-06-25 カシオ計算機株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR100986560B1 (ko) 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP6254674B2 (ja) 2013-03-15 2017-12-27 アップル インコーポレイテッド 冗長性スキームを備えた発光ダイオードディスプレイパネル
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
JP6584799B2 (ja) 2015-03-16 2019-10-02 アルパッド株式会社 半導体発光素子
CN104916527B (zh) * 2015-05-15 2018-03-02 京东方科技集团股份有限公司 显示基板及其制造方法、显示装置
CN108475712B (zh) 2015-12-01 2021-11-09 夏普株式会社 图像形成元件
JP2018066953A (ja) 2016-10-21 2018-04-26 株式会社半導体エネルギー研究所 表示装置の作製方法
US10902770B2 (en) 2016-12-22 2021-01-26 Sharp Kabushiki Kaisha Display device
CN107331670A (zh) * 2017-07-10 2017-11-07 深圳市华星光电技术有限公司 显示面板及其制作方法、显示设备
US20200251460A1 (en) 2017-08-25 2020-08-06 Sharp Kabushiki Kaisha Micro-led element, image display element, and production method
CN108183156A (zh) * 2017-12-26 2018-06-19 深圳市华星光电技术有限公司 微型发光二极管显示面板及其制作方法
JP7079106B2 (ja) 2018-01-24 2022-06-01 シャープ株式会社 画像表示素子、及び画像表示素子の製造方法
CN108615740B (zh) * 2018-05-26 2020-11-10 矽照光电（厦门）有限公司 柔性有源彩色半导体发光显示模块及柔性显示屏

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180259570A1 (en) * 2017-01-23 2018-09-13 Tesoro Scientific, Inc. Light emitting diode (led) test apparatus and method of manufacture
WO2019053923A1 (ja) * 2017-09-13 2019-03-21 シャープ株式会社 Ｌｅｄユニット、画像表示素子およびその製造方法
CN109300932A (zh) * 2018-11-12 2019-02-01 严光能 Led显示器及其制作方法

Also Published As

Publication number Publication date
WO2020230667A1 (ja) 2020-11-19
TW202101414A (zh) 2021-01-01
US12087895B2 (en) 2024-09-10
JPWO2020230667A1 (https=) 2020-11-19
US20240395996A1 (en) 2024-11-28
US20220069187A1 (en) 2022-03-03
CN113994485A (zh) 2022-01-28
CN113994485B (zh) 2026-03-24
JP7484078B2 (ja) 2024-05-16

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