TWI836065B - 多區方位角加熱器及加熱方法 - Google Patents

多區方位角加熱器及加熱方法 Download PDF

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Publication number
TWI836065B
TWI836065B TW109113890A TW109113890A TWI836065B TW I836065 B TWI836065 B TW I836065B TW 109113890 A TW109113890 A TW 109113890A TW 109113890 A TW109113890 A TW 109113890A TW I836065 B TWI836065 B TW I836065B
Authority
TW
Taiwan
Prior art keywords
substrate
heater
resistive
heating elements
resistive heating
Prior art date
Application number
TW109113890A
Other languages
English (en)
Chinese (zh)
Other versions
TW202044911A (zh
Inventor
凱文 史密斯
保羅 瓦勒查維克
Original Assignee
美商瓦特洛威電子製造公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商瓦特洛威電子製造公司 filed Critical 美商瓦特洛威電子製造公司
Publication of TW202044911A publication Critical patent/TW202044911A/zh
Application granted granted Critical
Publication of TWI836065B publication Critical patent/TWI836065B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0202—Switches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW109113890A 2019-04-25 2020-04-24 多區方位角加熱器及加熱方法 TWI836065B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962838535P 2019-04-25 2019-04-25
US62/838,535 2019-04-25

Publications (2)

Publication Number Publication Date
TW202044911A TW202044911A (zh) 2020-12-01
TWI836065B true TWI836065B (zh) 2024-03-21

Family

ID=72917234

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109113890A TWI836065B (zh) 2019-04-25 2020-04-24 多區方位角加熱器及加熱方法

Country Status (4)

Country Link
US (3) US11562913B2 (enExample)
JP (1) JP7438840B2 (enExample)
KR (1) KR102601204B1 (enExample)
TW (1) TWI836065B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11382180B2 (en) * 2017-11-21 2022-07-05 Watlow Electric Manufacturing Company Multi-zone pedestal heater having a routing layer
JP7407752B2 (ja) * 2021-02-05 2024-01-04 日本碍子株式会社 ウエハ支持台

Citations (5)

* Cited by examiner, † Cited by third party
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TW200723370A (en) * 2005-12-01 2007-06-16 Applied Materials Inc Multi-zone resistive heater
CN102668058A (zh) * 2009-10-21 2012-09-12 朗姆研究公司 具有用于半导体处理的平坦加热器区域的加热板
US9089007B2 (en) * 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
US20160329231A1 (en) * 2014-07-23 2016-11-10 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
TW201831042A (zh) * 2016-10-21 2018-08-16 美商瓦特洛威電子製造公司 具有低漂移電阻反饋之電氣加熱器

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JP3512650B2 (ja) 1998-09-30 2004-03-31 京セラ株式会社 加熱装置
EP1132956A4 (en) * 1998-10-29 2005-04-27 Tokyo Electron Ltd VACUUM GENERATOR UNIT
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JP3904986B2 (ja) * 2002-06-26 2007-04-11 京セラ株式会社 ウェハ支持部材
JP4761723B2 (ja) * 2004-04-12 2011-08-31 日本碍子株式会社 基板加熱装置
TWI281833B (en) * 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
JP2007088411A (ja) * 2005-06-28 2007-04-05 Hitachi High-Technologies Corp 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法
JP5009064B2 (ja) 2007-06-27 2012-08-22 太平洋セメント株式会社 セラミックスヒーター
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KR20130098707A (ko) * 2012-02-28 2013-09-05 삼성전자주식회사 정전 척 장치 및 그 제어방법
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KR102435888B1 (ko) * 2017-07-04 2022-08-25 삼성전자주식회사 정전 척, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
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Publication number Priority date Publication date Assignee Title
TW200723370A (en) * 2005-12-01 2007-06-16 Applied Materials Inc Multi-zone resistive heater
CN102668058A (zh) * 2009-10-21 2012-09-12 朗姆研究公司 具有用于半导体处理的平坦加热器区域的加热板
CN102668058B (zh) 2009-10-21 2015-04-01 朗姆研究公司 具有用于半导体处理的平坦加热器区域的加热板
US9089007B2 (en) * 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
US20160329231A1 (en) * 2014-07-23 2016-11-10 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
TW201831042A (zh) * 2016-10-21 2018-08-16 美商瓦特洛威電子製造公司 具有低漂移電阻反饋之電氣加熱器

Also Published As

Publication number Publication date
KR102601204B1 (ko) 2023-11-13
US20230154768A1 (en) 2023-05-18
JP2020181817A (ja) 2020-11-05
TW202044911A (zh) 2020-12-01
US20200343112A1 (en) 2020-10-29
US20240412988A1 (en) 2024-12-12
US12100603B2 (en) 2024-09-24
JP7438840B2 (ja) 2024-02-27
KR20200125909A (ko) 2020-11-05
US11562913B2 (en) 2023-01-24

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