TWI836065B - 多區方位角加熱器及加熱方法 - Google Patents

多區方位角加熱器及加熱方法 Download PDF

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Publication number
TWI836065B
TWI836065B TW109113890A TW109113890A TWI836065B TW I836065 B TWI836065 B TW I836065B TW 109113890 A TW109113890 A TW 109113890A TW 109113890 A TW109113890 A TW 109113890A TW I836065 B TWI836065 B TW I836065B
Authority
TW
Taiwan
Prior art keywords
substrate
heater
resistive
heating elements
resistive heating
Prior art date
Application number
TW109113890A
Other languages
English (en)
Chinese (zh)
Other versions
TW202044911A (zh
Inventor
凱文 史密斯
保羅 瓦勒查維克
Original Assignee
美商瓦特洛威電子製造公司
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Publication of TW202044911A publication Critical patent/TW202044911A/zh
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Publication of TWI836065B publication Critical patent/TWI836065B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0202—Switches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW109113890A 2019-04-25 2020-04-24 多區方位角加熱器及加熱方法 TWI836065B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962838535P 2019-04-25 2019-04-25
US62/838,535 2019-04-25

Publications (2)

Publication Number Publication Date
TW202044911A TW202044911A (zh) 2020-12-01
TWI836065B true TWI836065B (zh) 2024-03-21

Family

ID=72917234

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109113890A TWI836065B (zh) 2019-04-25 2020-04-24 多區方位角加熱器及加熱方法

Country Status (4)

Country Link
US (3) US11562913B2 (enExample)
JP (1) JP7438840B2 (enExample)
KR (1) KR102601204B1 (enExample)
TW (1) TWI836065B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7349439B2 (ja) * 2017-11-21 2023-09-22 ワトロー エレクトリック マニュファクチュアリング カンパニー 経路層を持つ複数領域ペデスタルヒーター
JP7407752B2 (ja) * 2021-02-05 2024-01-04 日本碍子株式会社 ウエハ支持台

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200723370A (en) * 2005-12-01 2007-06-16 Applied Materials Inc Multi-zone resistive heater
CN102668058A (zh) * 2009-10-21 2012-09-12 朗姆研究公司 具有用于半导体处理的平坦加热器区域的加热板
US9089007B2 (en) * 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
US20160329231A1 (en) * 2014-07-23 2016-11-10 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
TW201831042A (zh) * 2016-10-21 2018-08-16 美商瓦特洛威電子製造公司 具有低漂移電阻反饋之電氣加熱器

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4022846C2 (de) * 1990-07-18 1994-08-11 Schott Glaswerke Vorrichtung zur Leistungssteuerung und -begrenzung bei einer Heizfläche aus Glaskeramik oder einem vergleichbaren Material
JP3512650B2 (ja) * 1998-09-30 2004-03-31 京セラ株式会社 加熱装置
EP1132956A4 (en) * 1998-10-29 2005-04-27 Tokyo Electron Ltd VACUUM GENERATOR UNIT
JP2001035907A (ja) * 1999-07-26 2001-02-09 Ulvac Japan Ltd 吸着装置
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
US6225608B1 (en) * 1999-11-30 2001-05-01 White Consolidated Industries, Inc. Circular film heater
US7211153B2 (en) * 2001-04-13 2007-05-01 Sumitomo Electric Industries, Ltd. Ceramic joined body, substrate holding structure and substrate processing apparatus
EP1463380A1 (en) * 2001-11-30 2004-09-29 Ibiden Co., Ltd. Ceramic heater
JP3904986B2 (ja) * 2002-06-26 2007-04-11 京セラ株式会社 ウェハ支持部材
JP4761723B2 (ja) * 2004-04-12 2011-08-31 日本碍子株式会社 基板加熱装置
TWI281833B (en) * 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
JP2007088411A (ja) * 2005-06-28 2007-04-05 Hitachi High-Technologies Corp 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法
JP5009064B2 (ja) 2007-06-27 2012-08-22 太平洋セメント株式会社 セラミックスヒーター
US8733280B2 (en) 2010-12-20 2014-05-27 Intermolecular, Inc. Showerhead for processing chamber
EP2752080B1 (en) * 2011-08-30 2023-06-14 Watlow Electric Manufacturing Company System and method for controlling a thermal array
KR20130098707A (ko) * 2012-02-28 2013-09-05 삼성전자주식회사 정전 척 장치 및 그 제어방법
US10049948B2 (en) * 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
JP5980147B2 (ja) * 2013-03-08 2016-08-31 日本発條株式会社 基板支持装置
US11158526B2 (en) * 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US9666467B2 (en) * 2014-11-21 2017-05-30 Varian Semiconductor Equipment Associates, Inc. Detachable high-temperature electrostatic chuck assembly
US9888528B2 (en) * 2014-12-31 2018-02-06 Applied Materials, Inc. Substrate support with multiple heating zones
KR102321919B1 (ko) * 2015-05-22 2021-11-03 어플라이드 머티어리얼스, 인코포레이티드 방위방향으로 튜닝가능한 다중-구역 정전 척
JP6129451B1 (ja) 2015-08-20 2017-05-17 日本碍子株式会社 静電チャックヒータ
KR102435888B1 (ko) * 2017-07-04 2022-08-25 삼성전자주식회사 정전 척, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
US11533783B2 (en) * 2019-07-18 2022-12-20 Applied Materials, Inc. Multi-zone heater model-based control in semiconductor manufacturing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200723370A (en) * 2005-12-01 2007-06-16 Applied Materials Inc Multi-zone resistive heater
CN102668058A (zh) * 2009-10-21 2012-09-12 朗姆研究公司 具有用于半导体处理的平坦加热器区域的加热板
US9089007B2 (en) * 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
US20160329231A1 (en) * 2014-07-23 2016-11-10 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
TW201831042A (zh) * 2016-10-21 2018-08-16 美商瓦特洛威電子製造公司 具有低漂移電阻反饋之電氣加熱器

Also Published As

Publication number Publication date
JP2020181817A (ja) 2020-11-05
KR102601204B1 (ko) 2023-11-13
US20240412988A1 (en) 2024-12-12
US11562913B2 (en) 2023-01-24
US12100603B2 (en) 2024-09-24
TW202044911A (zh) 2020-12-01
US20200343112A1 (en) 2020-10-29
US20230154768A1 (en) 2023-05-18
JP7438840B2 (ja) 2024-02-27
KR20200125909A (ko) 2020-11-05

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