TWI835826B - 電漿處理裝置之控制方法及電漿處理裝置 - Google Patents

電漿處理裝置之控制方法及電漿處理裝置 Download PDF

Info

Publication number
TWI835826B
TWI835826B TW108126448A TW108126448A TWI835826B TW I835826 B TWI835826 B TW I835826B TW 108126448 A TW108126448 A TW 108126448A TW 108126448 A TW108126448 A TW 108126448A TW I835826 B TWI835826 B TW I835826B
Authority
TW
Taiwan
Prior art keywords
voltage
electrode
negative
bias power
cycle
Prior art date
Application number
TW108126448A
Other languages
English (en)
Chinese (zh)
Other versions
TW202013501A (zh
Inventor
輿水地鹽
久保田紳治
丸山幸兒
道菅隆
永海幸一
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202013501A publication Critical patent/TW202013501A/zh
Application granted granted Critical
Publication of TWI835826B publication Critical patent/TWI835826B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW108126448A 2018-07-30 2019-07-26 電漿處理裝置之控制方法及電漿處理裝置 TWI835826B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018-142855 2018-07-30
JP2018142855 2018-07-30
JP2019108223A JP7306886B2 (ja) 2018-07-30 2019-06-10 制御方法及びプラズマ処理装置
JP2019-108223 2019-06-10

Publications (2)

Publication Number Publication Date
TW202013501A TW202013501A (zh) 2020-04-01
TWI835826B true TWI835826B (zh) 2024-03-21

Family

ID=69619468

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108126448A TWI835826B (zh) 2018-07-30 2019-07-26 電漿處理裝置之控制方法及電漿處理裝置

Country Status (5)

Country Link
US (1) US11764082B2 (enExample)
JP (1) JP7306886B2 (enExample)
KR (1) KR102841325B1 (enExample)
CN (1) CN111819664B (enExample)
TW (1) TWI835826B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
WO2020154310A1 (en) 2019-01-22 2020-07-30 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7450455B2 (ja) * 2020-05-13 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
TWI898038B (zh) * 2020-09-16 2025-09-21 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
JP7576484B2 (ja) * 2021-02-16 2024-10-31 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
WO2024258636A1 (en) * 2023-06-15 2024-12-19 Lam Research Corporation Systems and methods for controlling main electrode and edge ring using non-sinusoidal pulses to achieve process rate uniformity
WO2025070640A1 (ja) * 2023-09-29 2025-04-03 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US20250226179A1 (en) * 2024-01-08 2025-07-10 Tokyo Electron Limited Method and system for plasma process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200802598A (en) * 2006-03-30 2008-01-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
US20120052689A1 (en) * 2010-09-01 2012-03-01 Samsung Electronics Co., Ltd. Plasma etching method and apparatus thereof
TW201604988A (zh) * 2014-07-25 2016-02-01 Hitachi High Tech Corp 電漿處理裝置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2869384B2 (ja) * 1995-06-30 1999-03-10 東京エレクトロン株式会社 プラズマ処理方法
CN1178392A (zh) * 1996-09-19 1998-04-08 株式会社日立制作所 静电吸盘和应用了静电吸盘的样品处理方法及装置
JP4672456B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP4672455B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5213496B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5221403B2 (ja) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
JP5171683B2 (ja) 2009-02-18 2013-03-27 東京エレクトロン株式会社 プラズマ処理方法
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5893864B2 (ja) * 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法
JPWO2013046640A1 (ja) 2011-09-26 2015-03-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9922802B2 (en) * 2012-02-20 2018-03-20 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
US10081869B2 (en) * 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
KR20160028612A (ko) 2014-09-03 2016-03-14 삼성전자주식회사 반도체 제조 장치 및 이를 이용한 반도체 소자의 제조 방법
US10115567B2 (en) * 2014-09-17 2018-10-30 Tokyo Electron Limited Plasma processing apparatus
JP6512962B2 (ja) 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
JP6479698B2 (ja) * 2016-02-18 2019-03-06 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
JP2017212361A (ja) 2016-05-26 2017-11-30 東京エレクトロン株式会社 プラズマ処理装置及びパーティクル付着抑制方法
US10672589B2 (en) * 2018-10-10 2020-06-02 Tokyo Electron Limited Plasma processing apparatus and control method
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
JP7158308B2 (ja) * 2019-02-14 2022-10-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200802598A (en) * 2006-03-30 2008-01-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
US20120052689A1 (en) * 2010-09-01 2012-03-01 Samsung Electronics Co., Ltd. Plasma etching method and apparatus thereof
TW201604988A (zh) * 2014-07-25 2016-02-01 Hitachi High Tech Corp 電漿處理裝置

Also Published As

Publication number Publication date
JP7306886B2 (ja) 2023-07-11
KR20210035072A (ko) 2021-03-31
TW202013501A (zh) 2020-04-01
CN111819664A (zh) 2020-10-23
KR102841325B1 (ko) 2025-07-31
US11764082B2 (en) 2023-09-19
JP2020025083A (ja) 2020-02-13
US20210043472A1 (en) 2021-02-11
CN111819664B (zh) 2024-04-12

Similar Documents

Publication Publication Date Title
TWI835826B (zh) 電漿處理裝置之控制方法及電漿處理裝置
US11574798B2 (en) Plasma processing apparatus and control method
US12165842B2 (en) Control method and plasma processing apparatus
US11742183B2 (en) Plasma processing apparatus and control method
US11830704B2 (en) Plasma processing apparatus and control method
WO2020026802A1 (ja) 制御方法及びプラズマ処理装置
CN111383898B (zh) 等离子体处理装置和控制方法