CN111819664B - 控制方法和等离子体处理装置 - Google Patents

控制方法和等离子体处理装置 Download PDF

Info

Publication number
CN111819664B
CN111819664B CN201980017608.6A CN201980017608A CN111819664B CN 111819664 B CN111819664 B CN 111819664B CN 201980017608 A CN201980017608 A CN 201980017608A CN 111819664 B CN111819664 B CN 111819664B
Authority
CN
China
Prior art keywords
voltage
period
negative
state
bias power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980017608.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN111819664A (zh
Inventor
舆水地盐
久保田绅治
丸山幸儿
道菅隆
永海幸一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority claimed from PCT/JP2019/028024 external-priority patent/WO2020026802A1/ja
Publication of CN111819664A publication Critical patent/CN111819664A/zh
Application granted granted Critical
Publication of CN111819664B publication Critical patent/CN111819664B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201980017608.6A 2018-07-30 2019-07-17 控制方法和等离子体处理装置 Active CN111819664B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018-142855 2018-07-30
JP2018142855 2018-07-30
JP2019108223A JP7306886B2 (ja) 2018-07-30 2019-06-10 制御方法及びプラズマ処理装置
JP2019-108223 2019-06-10
PCT/JP2019/028024 WO2020026802A1 (ja) 2018-07-30 2019-07-17 制御方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
CN111819664A CN111819664A (zh) 2020-10-23
CN111819664B true CN111819664B (zh) 2024-04-12

Family

ID=69619468

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980017608.6A Active CN111819664B (zh) 2018-07-30 2019-07-17 控制方法和等离子体处理装置

Country Status (5)

Country Link
US (1) US11764082B2 (enExample)
JP (1) JP7306886B2 (enExample)
KR (1) KR102841325B1 (enExample)
CN (1) CN111819664B (enExample)
TW (1) TWI835826B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7175239B2 (ja) 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR102827481B1 (ko) 2019-01-22 2025-06-30 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7450455B2 (ja) * 2020-05-13 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
TWI898038B (zh) * 2020-09-16 2025-09-21 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
JP7576484B2 (ja) * 2021-02-16 2024-10-31 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
WO2024258636A1 (en) * 2023-06-15 2024-12-19 Lam Research Corporation Systems and methods for controlling main electrode and edge ring using non-sinusoidal pulses to achieve process rate uniformity
JP7696071B1 (ja) * 2023-09-29 2025-06-19 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US20250226179A1 (en) * 2024-01-08 2025-07-10 Tokyo Electron Limited Method and system for plasma process

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0974129A (ja) * 1995-06-30 1997-03-18 Tokyo Electron Ltd プラズマ処理方法
CN1178392A (zh) * 1996-09-19 1998-04-08 株式会社日立制作所 静电吸盘和应用了静电吸盘的样品处理方法及装置
CN1842242A (zh) * 2005-03-31 2006-10-04 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN101523569A (zh) * 2006-10-06 2009-09-02 东京毅力科创株式会社 等离子体蚀刻装置和等离子体蚀刻方法
CN101800161A (zh) * 2009-01-26 2010-08-11 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置
CN101990353A (zh) * 2009-08-04 2011-03-23 东京毅力科创株式会社 等离子处理装置和等离子处理方法
JP2016066593A (ja) * 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置
CN105990088A (zh) * 2015-03-23 2016-10-05 东京毅力科创株式会社 电源系统、等离子体处理装置和电源控制方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672456B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP4672455B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
JP5031252B2 (ja) * 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
JP5213496B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5171683B2 (ja) * 2009-02-18 2013-03-27 東京エレクトロン株式会社 プラズマ処理方法
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5893864B2 (ja) * 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法
KR101957348B1 (ko) * 2011-09-26 2019-03-12 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
KR102038649B1 (ko) * 2012-02-20 2019-10-30 도쿄엘렉트론가부시키가이샤 전원 시스템, 플라즈마 에칭 장치 및 플라즈마 에칭 방법
US10081869B2 (en) * 2014-06-10 2018-09-25 Lam Research Corporation Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates
JP6357436B2 (ja) * 2014-07-25 2018-07-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR20160028612A (ko) * 2014-09-03 2016-03-14 삼성전자주식회사 반도체 제조 장치 및 이를 이용한 반도체 소자의 제조 방법
US10115567B2 (en) * 2014-09-17 2018-10-30 Tokyo Electron Limited Plasma processing apparatus
JP6479698B2 (ja) * 2016-02-18 2019-03-06 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
JP2017212361A (ja) * 2016-05-26 2017-11-30 東京エレクトロン株式会社 プラズマ処理装置及びパーティクル付着抑制方法
US10672589B2 (en) * 2018-10-10 2020-06-02 Tokyo Electron Limited Plasma processing apparatus and control method
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
JP7158308B2 (ja) * 2019-02-14 2022-10-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0974129A (ja) * 1995-06-30 1997-03-18 Tokyo Electron Ltd プラズマ処理方法
CN1178392A (zh) * 1996-09-19 1998-04-08 株式会社日立制作所 静电吸盘和应用了静电吸盘的样品处理方法及装置
CN1842242A (zh) * 2005-03-31 2006-10-04 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN101523569A (zh) * 2006-10-06 2009-09-02 东京毅力科创株式会社 等离子体蚀刻装置和等离子体蚀刻方法
CN101800161A (zh) * 2009-01-26 2010-08-11 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置
CN101990353A (zh) * 2009-08-04 2011-03-23 东京毅力科创株式会社 等离子处理装置和等离子处理方法
JP2016066593A (ja) * 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置
CN105990088A (zh) * 2015-03-23 2016-10-05 东京毅力科创株式会社 电源系统、等离子体处理装置和电源控制方法

Also Published As

Publication number Publication date
TW202013501A (zh) 2020-04-01
JP7306886B2 (ja) 2023-07-11
JP2020025083A (ja) 2020-02-13
TWI835826B (zh) 2024-03-21
KR20210035072A (ko) 2021-03-31
CN111819664A (zh) 2020-10-23
KR102841325B1 (ko) 2025-07-31
US11764082B2 (en) 2023-09-19
US20210043472A1 (en) 2021-02-11

Similar Documents

Publication Publication Date Title
CN111819664B (zh) 控制方法和等离子体处理装置
US11742183B2 (en) Plasma processing apparatus and control method
US11476089B2 (en) Control method and plasma processing apparatus
US11574798B2 (en) Plasma processing apparatus and control method
WO2020026802A1 (ja) 制御方法及びプラズマ処理装置
US11830704B2 (en) Plasma processing apparatus and control method
CN111383898B (zh) 等离子体处理装置和控制方法
TWI901575B (zh) 電漿處理裝置及控制方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant