TWI834972B - 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式 - Google Patents

基板處理方法、半導體裝置之製造方法、基板處理裝置及程式 Download PDF

Info

Publication number
TWI834972B
TWI834972B TW110118362A TW110118362A TWI834972B TW I834972 B TWI834972 B TW I834972B TW 110118362 A TW110118362 A TW 110118362A TW 110118362 A TW110118362 A TW 110118362A TW I834972 B TWI834972 B TW I834972B
Authority
TW
Taiwan
Prior art keywords
chlorine
substrate
gas
semiconductor layer
film
Prior art date
Application number
TW110118362A
Other languages
English (en)
Chinese (zh)
Other versions
TW202201490A (zh
Inventor
高橋正紘
堀田英樹
Original Assignee
日商國際電氣股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商國際電氣股份有限公司 filed Critical 日商國際電氣股份有限公司
Publication of TW202201490A publication Critical patent/TW202201490A/zh
Application granted granted Critical
Publication of TWI834972B publication Critical patent/TWI834972B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3246—Monolayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3822—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW110118362A 2020-05-29 2021-05-21 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式 TWI834972B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020094304 2020-05-29
JP2020-094304 2020-05-29

Publications (2)

Publication Number Publication Date
TW202201490A TW202201490A (zh) 2022-01-01
TWI834972B true TWI834972B (zh) 2024-03-11

Family

ID=78744725

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110118362A TWI834972B (zh) 2020-05-29 2021-05-21 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式

Country Status (6)

Country Link
US (1) US20230098703A1 (https=)
JP (1) JP7361911B2 (https=)
KR (1) KR102758532B1 (https=)
CN (1) CN115668454A (https=)
TW (1) TWI834972B (https=)
WO (1) WO2021241448A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020024119A1 (en) * 1999-01-08 2002-02-28 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20050093085A1 (en) * 2002-06-12 2005-05-05 Sanyo Electric Co., Ltd. Semiconductor device having silicon oxide film
TW200703553A (en) * 2005-06-30 2007-01-16 Promos Technologies Pte Ltd Use of chlorine to fabricate trench dielectric in integrated circuits
US20120077330A1 (en) * 2009-01-21 2012-03-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and semiconductor device
US20150255269A1 (en) * 2013-03-05 2015-09-10 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3320180B2 (ja) * 1993-12-22 2002-09-03 ティーディーケイ株式会社 薄膜トランジスタの製造方法
JPH1126385A (ja) * 1997-07-07 1999-01-29 Toyota Central Res & Dev Lab Inc 多結晶シリコン薄膜の製造方法
JP2001352087A (ja) * 2000-06-07 2001-12-21 Tokuyama Corp シリコン膜及びその製造方法
JP3375938B2 (ja) * 2000-07-26 2003-02-10 株式会社半導体エネルギー研究所 半導体装置
CN102668098B (zh) * 2009-12-28 2015-07-22 株式会社半导体能源研究所 制造半导体装置的方法
US8916425B2 (en) * 2010-07-26 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
JP5815443B2 (ja) * 2012-03-19 2015-11-17 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
CN107851669A (zh) * 2015-07-27 2018-03-27 夏普株式会社 半导体装置及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020024119A1 (en) * 1999-01-08 2002-02-28 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20050093085A1 (en) * 2002-06-12 2005-05-05 Sanyo Electric Co., Ltd. Semiconductor device having silicon oxide film
TW200703553A (en) * 2005-06-30 2007-01-16 Promos Technologies Pte Ltd Use of chlorine to fabricate trench dielectric in integrated circuits
US20120077330A1 (en) * 2009-01-21 2012-03-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and semiconductor device
US20150255269A1 (en) * 2013-03-05 2015-09-10 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Also Published As

Publication number Publication date
CN115668454A (zh) 2023-01-31
JPWO2021241448A1 (https=) 2021-12-02
TW202201490A (zh) 2022-01-01
WO2021241448A1 (ja) 2021-12-02
JP7361911B2 (ja) 2023-10-16
KR102758532B1 (ko) 2025-01-23
KR20230003142A (ko) 2023-01-05
US20230098703A1 (en) 2023-03-30

Similar Documents

Publication Publication Date Title
TWI821626B (zh) 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式
CN109994369B (zh) 半导体器件的制造方法、衬底处理装置、及记录介质
TW202200823A (zh) 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式
US9997354B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
CN111719133A (zh) 半导体器件的制造方法、衬底处理装置及记录介质
JP7368427B2 (ja) 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN110896052B (zh) 半导体器件的制造方法、衬底处理装置及记录介质
CN107452598B (zh) 半导体器件的制造方法、衬底处理装置及记录介质
KR102726911B1 (ko) 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램
KR102611684B1 (ko) 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 시스템 및 프로그램
TW202238720A (zh) 半導體裝置的製造方法、基板處理方法、程式及基板處理裝置
TWI831204B (zh) 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式
JP7579959B2 (ja) 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
TWI834972B (zh) 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式
TWI809345B (zh) 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式
TW202338966A (zh) 基板處理方法、半導體裝置之製造方法、程式及基板處理裝置
TWI879313B (zh) 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式
TW202538881A (zh) 基板處理方法，半導體裝置的製造方法，程式，及基板處理裝置
WO2024195035A1 (ja) 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置
TW202514814A (zh) 處理方法、半導體裝置之製造方法、處理裝置及程式
WO2022176155A1 (ja) 半導体装置の製造方法、基板処理装置、およびプログラム
WO2024062634A1 (ja) 基板処理方法、半導体装置の製造方法、基板処理装置およびプログラム