TWI827863B - Wafer appearance inspection device and method - Google Patents

Wafer appearance inspection device and method Download PDF

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TWI827863B
TWI827863B TW109123702A TW109123702A TWI827863B TW I827863 B TWI827863 B TW I827863B TW 109123702 A TW109123702 A TW 109123702A TW 109123702 A TW109123702 A TW 109123702A TW I827863 B TWI827863 B TW I827863B
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inspection
image
wafer
macro
reference image
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TW202109027A (en
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仲田朋宏
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日商東麗工程股份有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854Grading and classifying of flaws
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/10Scanning
    • G01N2201/104Mechano-optical scan, i.e. object and beam moving

Abstract

本發明之課題在於提供一種檢查裝置及方法,其能夠基於為了進行微觀檢查而取得之小區劃之放大圖像,而自動地檢查作為宏觀檢查之範疇之尺寸比較大之損傷或污染、異物之附著等。 本發明之晶圓外觀檢查裝置及方法係拍攝形成有重複圖案之晶圓之外觀圖像,且將該拍攝到之圖像與預先登錄之基準圖像進行比較而進行檢查者,且 一面逐次變更攝像場所,一面對形成於檢查對象晶圓之重複圖案進行分割拍攝,將該分割拍攝到之圖像彼此結合而產生大尺寸之宏觀檢查用檢查圖像後,將該大尺寸之宏觀檢查用檢查圖像壓縮,產生小尺寸之宏觀檢查用檢查圖像;且 將該小尺寸之宏觀檢查用檢查圖像與預先產生、登錄之小尺寸之宏觀檢查用基準圖像進行比較,而對檢查對象晶圓進行宏觀檢查。An object of the present invention is to provide an inspection device and method that can automatically inspect relatively large-sized damage, contamination, and adhesion of foreign matter that are within the scope of macroscopic inspection based on an enlarged image of a small area obtained for microscopic inspection. wait. The wafer appearance inspection device and method of the present invention captures an appearance image of a wafer having a repeating pattern, and performs inspection by comparing the captured image with a pre-registered reference image, and The repeating pattern formed on the wafer to be inspected is divided and photographed while gradually changing the imaging location. The divided and photographed images are combined to generate a large-sized inspection image for macro inspection. The large-sized inspection image is then The inspection image for macro inspection is compressed to generate a small size inspection image for macro inspection; and The small-sized macro-inspection inspection image is compared with a pre-generated and registered small-sized macro-inspection reference image, and the inspection target wafer is macro-inspected.

Description

晶圓外觀檢查裝置及方法Wafer appearance inspection device and method

本發明係關於一種拍攝形成於晶圓上之器件晶片等之重複外觀圖案或設定於檢查對象晶圓之無圖案區劃之外觀圖像,將該拍攝到之檢查圖像與預先登錄之基準圖像進行比較,而進行該器件晶片等之檢查之晶圓外觀檢查裝置及方法。The present invention relates to a method for photographing a repeating appearance pattern of a device chip or the like formed on a wafer or an appearance image of a non-patterned area set on a wafer to be inspected, and comparing the captured inspection image with a pre-registered reference image. A wafer appearance inspection device and method for comparing and inspecting the device wafer, etc.

半導體器件當在1片半導體晶圓上形成多數個半導體器件電路(即器件晶片之重複外觀圖案)後,單片化為一個一個之晶片零件,該晶片零件被封裝,作為電子零件以單體出貨或組裝入電氣產品。When a semiconductor device is formed with a plurality of semiconductor device circuits (i.e., a repeating appearance pattern of the device wafer) on a semiconductor wafer, it is then diced into individual chip parts. The chip parts are packaged and produced as individual electronic parts. goods or assemblies into electrical products.

而且,將拍攝到在各個晶片零件單片化前,形成於晶圓上之器件晶片之重複外觀圖案之檢查圖像與基準圖像進行比較,而進行是否無配線圖案等之殘缺或短路、線寬異常、異物之附著等之檢查(所謂之外觀檢查。亦可稱為圖案檢查、微觀檢查)(例如,專利文獻1)。Furthermore, the inspection image of the repetitive appearance pattern of the device chip formed on the wafer before each wafer component is singulated is compared with the reference image to determine whether there are no defects, short circuits, wires, etc. in the wiring pattern. Inspection of wide abnormalities, adhesion of foreign matter, etc. (so-called appearance inspection. It may also be called pattern inspection, microscopic inspection) (for example, Patent Document 1).

另一方面,對是否無尺寸比較大之損傷或污染、異物之附著,進行藉由目視之檢查(所謂之宏觀檢查)(例如,專利文獻2)。 [先前技術文獻] [專利文獻]On the other hand, a visual inspection (so-called macroscopic inspection) is performed to see whether there are no relatively large-sized damage, contamination, or adhesion of foreign matter (for example, Patent Document 2). [Prior technical literature] [Patent Document]

[專利文獻1]日本特開2007-155610號公報 [專利文獻2]日本特開平9-186209號公報[Patent Document 1] Japanese Patent Application Publication No. 2007-155610 [Patent Document 2] Japanese Patent Application Laid-Open No. 9-186209

[發明所欲解決之課題][Problem to be solved by the invention]

與微觀檢查同樣地,宏觀檢查亦謀求以檢查裝置之自動化。然而,先前之自動檢查裝置由於係特化用於微觀檢查者,不對應於跨複數個晶片之檢查,而無法檢查作為宏觀檢查之範疇之尺寸比較大之損傷或污染、異物之附著等。Like microscopic inspection, macroscopic inspection also seeks to automate the inspection device. However, previous automatic inspection devices are specialized for microscopic inspection and are not suitable for inspection across multiple wafers. They are unable to inspect relatively large-sized damage or contamination, adhesion of foreign matter, etc., which are within the scope of macroscopic inspection.

因而,本發明係鑒於上述問題點而完成者, 目的在於提供一種能夠基於為了微觀檢查而取得之較小之區劃之放大圖像,自動地檢查作為宏觀檢查之範疇之尺寸比較大之損傷或污染、異物之附著等之檢查裝置及方法。 [解決問題之技術手段]Therefore, the present invention was completed in view of the above-mentioned problems. The object is to provide an inspection device and method that can automatically inspect relatively large-sized damage, contamination, adhesion of foreign matter, etc., which are within the scope of macroscopic inspection, based on an enlarged image of a small area obtained for microscopic inspection. [Technical means to solve problems]

為了解決以上之問題,本發明之一態樣係一種晶圓外觀檢查裝置, 其係拍攝形成於檢查對象晶圓之重複圖案或設定於檢查對象晶圓之無圖案區劃之外觀圖像,且將該拍攝到之圖像與預先登錄之基準圖像進行比較而進行檢查者,且具備: 攝像部,其拍攝就重複圖案或無圖案區劃之每一者設定之檢查對象部位; 圖像處理部,其對由攝像部拍攝到之圖像進行處理; 基準圖像登錄部,其預先登錄基準圖像,該基準圖像為對於檢查對象部位之圖像的好壞判定基準;及 比較檢查部,其將拍攝到檢查對象部位之檢查圖像與基準圖像進行比較,而檢查潛藏於該檢查對象部位之缺陷;且 比較檢查部具備: 微觀檢查模式,其檢查潛藏於檢查對象部位內之缺陷;及 宏觀檢查模式,其跨複數個檢查對象部位而檢查檢查對象晶圓中潛在之缺陷。In order to solve the above problems, one aspect of the present invention is a wafer appearance inspection device. This involves taking an appearance image of a repeating pattern formed on the wafer to be inspected or a pattern-free area set on the wafer to be inspected, and comparing the captured image with a pre-registered reference image to perform the inspection. And have: A camera unit that captures the inspection target parts set for each of repeated patterns or non-pattern areas; The image processing unit processes the images captured by the camera unit; a reference image registration unit that pre-registers a reference image, which is a criterion for determining whether the image of the inspection target part is good or bad; and A comparison inspection unit that compares the inspection image captured of the inspection target part with the reference image to inspect defects hidden in the inspection target part; and The Comparative Inspection Department has: Microscopic inspection mode, which detects defects hidden in the inspection target parts; and Macroscopic inspection mode, which spans multiple inspection target parts and inspects potential defects in the inspection target wafer.

又,本發明之另一態樣係一種晶圓外觀檢查方法, 其係拍攝形成於檢查對象晶圓之重複圖案或形成於檢查對象晶圓之無圖案區劃之外觀圖像,且將該拍攝到之圖像與預先登錄之基準圖像進行比較而進行檢查者,該晶圓外觀檢查方法使用: 晶圓保持機構,其保持晶圓; 攝像機構,其拍攝就重複圖案或無圖案區劃之每一者設定之特定範圍; 相對移動機構,其使晶圓保持機構與攝像機構相對移動;及 圖像處理機構,其對由攝像機構拍攝到之圖像進行處理;且晶圓外觀檢查方法具有如下步驟: 保持成為檢查基準之基準晶圓; 一面逐次變更攝像場所,一面對形成於基準晶圓之重複圖案或形成於基準晶圓之無圖案區劃進行分割拍攝,將該分割拍攝到之基準圖像彼此接合而產生大尺寸之宏觀檢查用基準圖像後,將該大尺寸之宏觀檢查用基準圖像壓縮,產生小尺寸之宏觀檢查用基準圖像; 保持檢查對象晶圓; 一面逐次變更攝像場所,一面對形成於檢查對象晶圓之重複圖案或形成於檢查對象晶圓之無圖案區劃進行分割拍攝,將該分割拍攝到之檢查圖像彼此接合而產生大尺寸之宏觀檢查用檢查圖像後,將該大尺寸之宏觀檢查用檢查圖像壓縮,產生小尺寸之宏觀檢查用檢查圖像;及 將小尺寸之宏觀檢查用檢查圖像與小尺寸之宏觀檢查用基準圖像進行比較,而對檢查對象晶圓進行宏觀檢查。Furthermore, another aspect of the present invention is a wafer appearance inspection method, This involves taking an appearance image of a repeating pattern formed on the wafer to be inspected or a pattern-free area formed on the wafer to be inspected, and comparing the captured image with a pre-registered reference image to perform the inspection. This wafer visual inspection method uses: a wafer holding mechanism that holds the wafer; A camera mechanism that captures specific ranges set for each of repeating patterns or non-patterned areas; a relative movement mechanism that relatively moves the wafer holding mechanism and the camera mechanism; and The image processing mechanism processes the images captured by the camera mechanism; and the wafer appearance inspection method has the following steps: Maintain the reference wafer that becomes the inspection reference; While changing the imaging location one by one, the repeating pattern formed on the reference wafer or the pattern-free area formed on the reference wafer is divided and photographed, and the divided and photographed reference images are joined together to create a large-sized macro inspection. After generating the reference image, compress the large-sized reference image for macroscopic inspection to generate a small-sized reference image for macroscopic inspection; Keep the wafer under inspection; While changing the imaging location one by one, the repeating pattern formed on the inspection target wafer or the non-pattern area formed on the inspection target wafer is divided and photographed, and the inspection images captured by the divisions are joined together to create a large-sized macro After the inspection image is generated, the large-size macro-inspection inspection image is compressed to generate a small-size macro-inspection inspection image; and The small-sized inspection image for macro-inspection is compared with the small-sized reference image for macro-inspection, and the inspection target wafer is macro-inspected.

根據此晶圓外觀檢查裝置及方法,能夠基於為了微觀檢查而取得之較小之區劃之放大圖像,自動地檢查作為宏觀檢查之範疇之尺寸比較大之損傷或污染、異物之附著等。 [發明之效果]According to this wafer appearance inspection device and method, it is possible to automatically inspect relatively large-sized damage or contamination, adhesion of foreign matter, etc., which are within the scope of macroscopic inspection, based on the enlarged image of a small area obtained for microscopic inspection. [Effects of the invention]

以1個檢查裝置,既可自動地進行微觀檢查,亦可自動地進行宏觀檢查。With one inspection device, both micro-inspection and macro-inspection can be automatically performed.

以下,針對用於實施本發明之形態,一面利用圖一面進行說明。此外,在以下之說明中,將正交座標系之3軸設為x、y、z,將水平方向表現為x方向、y方向,將與xy平面垂直之方向(即重力方向)表現為z方向。又,z方向將與重力相反之方向表現為上,將重力作用之方向表現為下。又,將以z方向為中心軸旋轉之方向設為θ方向。Hereinafter, modes for implementing the present invention will be described using the drawings. In addition, in the following explanation, the three axes of the orthogonal coordinate system are represented as x, y, and z, the horizontal direction is represented as the x direction and the y direction, and the direction perpendicular to the xy plane (i.e., the gravity direction) is represented as z direction. In addition, the z direction represents the direction opposite to gravity as upward, and the direction of gravity as downward. Also, let the direction of rotation with the z direction as the central axis be the θ direction.

圖1係顯示將本發明具現化之形態之一例之整體構成的概略圖。在圖1中概略地顯示構成本發明之晶圓外觀檢查裝置1之各部。FIG. 1 is a schematic diagram showing the overall structure of an example of an embodiment of the present invention. FIG. 1 schematically shows each component constituting the wafer appearance inspection device 1 of the present invention.

晶圓外觀檢查裝置1拍攝形成於檢查對象晶圓W之器件晶片C之重複外觀圖案,與基準圖像Pf進行比較,而進行該檢查對象晶圓W及該器件晶片C之檢查。The wafer appearance inspection apparatus 1 photographs the repeated appearance pattern of the device wafer C formed on the inspection target wafer W, compares it with the reference image Pf, and inspects the inspection target wafer W and the device wafer C.

具體而言,晶圓外觀檢查裝置1一面逐次改變設定於檢查對象晶圓W上之攝像區域F之攝像場所,一面遍及晶圓W全面拍攝檢查對象部位,對拍攝到之圖像進行處理,而產生檢查圖像Px。而後,藉由將檢查圖像Px與基準圖像Pd進行比較,而遍及晶圓W全面,自動地進行在器件晶片C之電路圖案是否無短路或斷線等、或是否未附帶異物或瑕疵等所期望之檢查(即微觀檢查)。進而,晶圓外觀檢查裝置1對檢查圖像Px(所謂之分割圖像)進行處理,產生宏觀檢查用檢查圖像Pm(所謂之整體圖像),將該宏觀檢查用檢查圖像Pm與預先登錄之宏觀檢查用基準圖像Pf進行比較,而自動地進行晶圓W整體之宏觀檢查。Specifically, the wafer appearance inspection device 1 sequentially changes the imaging position of the imaging area F set on the inspection target wafer W, takes an entire image of the inspection target part over the wafer W, and processes the captured image. The inspection image Px is generated. Then, by comparing the inspection image Px with the reference image Pd, it is automatically determined whether the circuit pattern of the device wafer C has no short circuits, disconnections, etc., or whether there are no foreign matter or defects attached to the entire wafer W. Desired inspection (i.e. microscopic inspection). Furthermore, the wafer appearance inspection apparatus 1 processes the inspection image Px (so-called segmented image) to generate an inspection image Pm for macro inspection (so-called whole image), and combines the inspection image Pm for macro inspection with the preset image. The registered macroscopic inspection is compared with the reference image Pf, and the macroscopic inspection of the entire wafer W is automatically performed.

更具體而言,晶圓外觀檢查裝置1具備:晶圓保持部2、攝像部3、相對移動部4、晶片布局登錄部5、基準圖像登錄部6、圖像處理部7、比較檢查部8、及控制部CN等。More specifically, the wafer appearance inspection apparatus 1 includes a wafer holding unit 2, an imaging unit 3, a relative movement unit 4, a wafer layout registration unit 5, a reference image registration unit 6, an image processing unit 7, and a comparison inspection unit. 8. And the control department CN, etc.

晶圓保持部2保持晶圓W。 具體而言,晶圓保持部2對晶圓W自下表面側一面保持水平狀態一面予以支撐。更具體而言,晶圓保持部2具備上表面水平之載置台20。 載置台20在與晶圓W接觸之部分設置有槽部及孔部,該等槽部及孔部經由切換閥等與真空泵等之負壓產生機構連接。而且,晶圓保持部2藉由將該等槽部及孔部切換為負壓狀態或大氣釋放狀態,而可保持晶圓W或解除保持。The wafer holding unit 2 holds the wafer W. Specifically, the wafer holding portion 2 supports the wafer W while maintaining a horizontal state from the lower surface side. More specifically, the wafer holding part 2 includes a mounting table 20 with a horizontal upper surface. The mounting table 20 is provided with grooves and holes in portions in contact with the wafer W, and these grooves and holes are connected to a negative pressure generating mechanism such as a vacuum pump through a switching valve or the like. Furthermore, the wafer holding portion 2 can hold or release the wafer W by switching the groove portion and the hole portion to a negative pressure state or an atmosphere release state.

攝像部3拍攝檢查對象部位,且拍攝包含該檢查對象部位之圖像。The imaging unit 3 captures an inspection target part and captures an image including the inspection target part.

此處,所謂包含檢查對象部位之圖像,係包含形成於檢查對象晶圓W之成為檢查對象之器件晶片C之重複外觀圖案之一部分或全部之部位而拍攝到之圖像,且係指將每一器件晶片C之檢查對象部位分割而拍攝到之圖像(即,在每一器件晶片C之檢查對象部位之內外,設定多數個攝像區域F)、拍攝到包含1個或複數個器件晶片C之檢查對象部位之寬廣之範圍之圖像(即,在攝像區域F內,每一器件晶片C之檢查對象部位設定1個或複數個)。此外,因器件晶片C之排列(個數或節距等)及所要求之檢查精度等就每一檢查類型不同,而以攝像部3拍攝之範圍(即攝像區域)之尺寸及位置、間隔等與各個檢查類型相適應地登錄。Here, the image including the inspection target part means an image captured including a part or all of the repeating appearance pattern of the device wafer C to be inspected, which is formed on the inspection target wafer W, and refers to the image captured. The image captured by dividing the inspection target part of each device wafer C (that is, setting a plurality of imaging areas F inside and outside the inspection target part of each device wafer C), capturing an image including one or a plurality of device wafers An image of a wide range of the inspection target part of C (that is, in the imaging area F, one or a plurality of inspection target parts are set for each device wafer C). In addition, since the arrangement (number, pitch, etc.) of the device wafers C and the required inspection accuracy are different for each inspection type, the size, position, interval, etc. of the range captured by the imaging unit 3 (i.e., the imaging area) Log in appropriately for each examination type.

具體而言,攝像部3具備:鏡筒30、照明部31、半反射鏡32、複數個物鏡33a、33b、旋轉器機構34、及攝像相機35等。Specifically, the imaging unit 3 includes a lens barrel 30, an illumination unit 31, a half mirror 32, a plurality of objective lenses 33a and 33b, a rotator mechanism 34, an imaging camera 35, and the like.

鏡筒30以特定之姿勢將照明部31、半反射鏡32、物鏡33a、33b、旋轉器機構34、攝像相機35等固定,對照明光及觀察光予以導光。鏡筒30經由連結金屬件等(未圖示)安裝於裝置框架1f。The lens barrel 30 fixes the lighting part 31, the half mirror 32, the objective lenses 33a, 33b, the rotator mechanism 34, the imaging camera 35, etc. in a specific posture, and guides the illumination light and the observation light. The lens barrel 30 is attached to the device frame 1f via connecting metal fittings or the like (not shown).

照明部31放出拍攝所需之照明光L1。具體而言,照明部31可例示雷射二極體或金屬鹵素燈、氙氣燈、LED照明等。The lighting unit 31 emits illumination light L1 required for photography. Specifically, the lighting unit 31 may be a laser diode, a metal halide lamp, a xenon lamp, or LED lighting.

半反射鏡32使自照明部31放出之照明光L1反射而朝晶圓W側照射,且使自晶圓W側入射之光(反射光、散射光)L2朝攝像相機35側通過。The half mirror 32 reflects the illumination light L1 emitted from the illumination unit 31 and irradiates it toward the wafer W side, and allows the light (reflected light, scattered light) L2 incident from the wafer W side to pass toward the imaging camera 35 side.

物鏡33a、33b使工件W上之攝像區域之像以互不相同之特定之觀察倍率在攝像相機35之攝像元件36成像。The objective lenses 33a and 33b form an image of the imaging area on the workpiece W on the imaging element 36 of the imaging camera 35 at specific observation magnifications that are different from each other.

旋轉器機構34使用或切換物鏡33a、33b之任一者。具體而言,旋轉器機構34基於手動或來自外部之信號控制,按每特定之角度旋轉及靜止。The rotator mechanism 34 uses or switches any one of the objective lenses 33a and 33b. Specifically, the rotator mechanism 34 is controlled by manual or external signals to rotate and stop at a specific angle.

攝像相機35拍攝工件W上之攝像區域F,取得在攝像元件36成像之圖像。取得之圖像作為映像信號及映像資料被輸出至外部,由圖像處理部7予以處理而產生檢查圖像Px及基準圖像Pd。此外,該等檢查圖像Px及基準圖像Pd由於係對工件W就特定之區劃區域之每一者加以分割而拍攝者,而非對工件W整體廣泛地批次拍攝者,故意指經分割拍攝之檢查圖像Px、經分割拍攝之基準圖像Pd。The imaging camera 35 captures the imaging area F on the workpiece W, and acquires an image formed on the imaging element 36 . The acquired image is output to the outside as an image signal and image data, and is processed by the image processing unit 7 to generate an inspection image Px and a reference image Pd. In addition, since these inspection images Px and reference images Pd are taken by dividing the workpiece W into each specific divided area, rather than taking a wide range of batches of the entire workpiece W, they are intentionally divided. The photographed inspection image Px, and the divided and photographed reference image Pd.

相對移動部4使晶圓保持部2與攝像部3相對移動。 具體而言,相對移動部4具備x軸滑件41、y軸滑件42、及旋轉機構43而構成。The relative movement unit 4 relatively moves the wafer holding unit 2 and the imaging unit 3 . Specifically, the relative movement unit 4 includes an x-axis slider 41 , a y-axis slider 42 , and a rotation mechanism 43 .

x軸滑件41安裝於裝置框架1f上,使y軸滑件42在x方向以任意之速度移動,且在任意之位置靜止。具體而言,x軸滑件係由在x方向延伸之一對軌道、在該軌道上移動之滑件部、及使滑件部移動及靜止之滑件驅動部構成。滑件驅動部可包含:藉由來自控制部CN之信號控制而旋轉、靜止之伺服馬達或脈衝馬達與滾珠螺桿機構組合而成者,或線性馬達機構等。又,x軸滑件41中具備用於檢測滑件部之當前位置及移動量之編碼器。此外,該編碼器可例示在被稱為線性標度尺之直線狀之構件以特定節距刻出細小之凹凸者、或檢測使滾珠螺桿旋轉之馬達之旋轉角度的旋轉編碼器等。The x-axis slider 41 is installed on the device frame 1f, so that the y-axis slider 42 moves at any speed in the x-direction and remains stationary at any position. Specifically, the x-axis slider is composed of a pair of rails extending in the x-direction, a slider portion that moves on the rails, and a slider driving portion that moves and stops the slider portion. The slide driving part may include a combination of a servo motor or a pulse motor and a ball screw mechanism that rotates or stops under the control of a signal from the control part CN, or a linear motor mechanism. In addition, the x-axis slider 41 is equipped with an encoder for detecting the current position and movement amount of the slider portion. Examples of the encoder include a linear member called a linear scale with fine irregularities carved at a specific pitch, a rotary encoder that detects the rotation angle of a motor that rotates a ball screw, and the like.

y軸滑件42基於自控制部CN輸出之控制信號,使旋轉機構43在y方向以任意之速度移動,且在任意之位置靜止。具體而言,y軸滑件係由在y方向延伸之一對軌道、在該軌道上移動之滑件部、及使滑件部移動及靜止之滑件驅動部構成。滑件驅動部可包含:藉由來自控制部CN之信號控制而旋轉、靜止之伺服馬達或脈衝馬達與滾珠螺桿機構組合而成者,或線性馬達機構等。又,在y軸滑件42具備用於檢測滑件部之當前位置及移動量之編碼器。此外,該編碼器可例示在被稱為線性標度尺之直線狀之構件以特定節距刻出細小之凹凸者、或檢測使滾珠螺桿旋轉之馬達之旋轉角度之旋轉編碼器等。The y-axis slider 42 causes the rotating mechanism 43 to move in the y direction at any speed and to stop at any position based on the control signal output from the control unit CN. Specifically, the y-axis slider is composed of a pair of rails extending in the y direction, a slider portion that moves on the rails, and a slider driving portion that moves and stops the slider portion. The slide driving part may include a combination of a servo motor or a pulse motor and a ball screw mechanism that rotates or stops under the control of a signal from the control part CN, or a linear motor mechanism. Furthermore, the y-axis slider 42 is provided with an encoder for detecting the current position and movement amount of the slider portion. Examples of the encoder include a linear member called a linear scale with fine irregularities carved at a specific pitch, a rotary encoder that detects the rotation angle of a motor that rotates a ball screw, and the like.

旋轉機構43使載置台20在θ方向以任意之速度旋轉,且以任意之角度靜止。具體而言,旋轉機構43可例示藉由來自直驅馬達等之外部機器之信號控制而以任意之角度旋轉/靜止者。在旋轉機構43之旋轉之側之構件之上,安裝晶圓保持部2之載置台20。The rotation mechanism 43 rotates the mounting table 20 in the θ direction at an arbitrary speed and stops it at an arbitrary angle. Specifically, the rotating mechanism 43 can be rotated/stationary at any angle by control of a signal from an external device such as a direct drive motor. The mounting table 20 of the wafer holding part 2 is mounted on the member on the rotating side of the rotating mechanism 43 .

相對移動部4因具有此種構成,而可在保持著成為檢查對象之晶圓W之狀態下,使晶圓W相對於攝像部3在xyθ方向分別獨立地或複合地以特定之速度或角度相對移動,或在任意之位置、角度靜止。Since the relative moving unit 4 has such a structure, while holding the wafer W to be inspected, the wafer W can be moved at a specific speed or angle in the xyθ direction with respect to the imaging unit 3 independently or compositely. Move relative to each other, or remain stationary at any position or angle.

圖2係顯示將本發明具現化之形態之一例之拍攝情形的概念圖。 在圖2中顯示一面使攝像部3之攝像相機35相對於晶圓W在箭頭Vs所示之方向相對移動,逐次變更在晶圓W上分開配置之複數個器件晶片C(2,1)~C(5,1)之攝像場所,而一面拍攝檢查對象部位(即分割拍攝晶圓W)之情形。此外並圖示在當前時刻,使包含器件晶片C(4,1)之檢查對象部位之攝像區域F在攝像相機35之攝像元件成像並予以拍攝之情形。FIG. 2 is a conceptual diagram showing a shooting situation of an example of the embodiment of the present invention. As shown in FIG. 2 , the camera 35 of the imaging unit 3 is relatively moved relative to the wafer W in the direction indicated by the arrow Vs, and a plurality of device wafers C (2, 1) to be arranged separately on the wafer W are sequentially changed. In the imaging location C(5,1), the inspection target part (i.e., the divided imaging wafer W) is photographed on one side. In addition, the figure shows a situation in which the imaging area F including the inspection target portion of the device wafer C ( 4 , 1 ) is imaged and photographed by the imaging element of the imaging camera 35 at the current time.

圖3係顯示將本發明具現化之形態之一例之基準晶圓Wf及成為檢查對象之晶圓W與器件晶片C之配置例的俯視圖。 在圖3(a)中顯示成為檢查基準之基準晶圓Wf、及形成於該基準晶圓Wf上之器件晶片C之重複外觀圖案之配置影像。又,在圖3(a)中顯示對於該基準晶圓Wf分割拍攝到之基準圖像Pd與器件晶片C之位置關係。 在圖3(b)中顯示形成於成為檢查對象之晶圓W上之器件晶片C之重複外觀圖案之配置影像、及潛藏於該晶圓W之污染X之一例。又,在圖3(b)中顯示對於該晶圓W分割拍攝到之檢查圖像Px與器件晶片C之位置關係。此外,潛藏於晶圓W之污染X為宏觀檢查之檢測對象之缺陷之一類型,以跨於複數個分割拍攝到之檢查圖像Px之方式廣泛地分佈。FIG. 3 is a plan view showing an arrangement example of a reference wafer Wf, a wafer W to be inspected, and a device wafer C as an example of the embodiment of the present invention. FIG. 3(a) shows a reference wafer Wf serving as an inspection reference and an arrangement image of a repeating appearance pattern of a device chip C formed on the reference wafer Wf. In addition, the positional relationship between the reference image Pd captured by dividing the reference wafer Wf and the device wafer C is shown in FIG. 3(a) . FIG. 3(b) shows an arrangement image of a repeating appearance pattern of a device wafer C formed on a wafer W to be inspected, and an example of contamination X hidden in the wafer W. In addition, the positional relationship between the inspection image Px captured by dividing the wafer W and the device wafer C is shown in FIG. 3(b). In addition, the contamination X hidden in the wafer W is one type of defect that is the detection target of the macroscopic inspection, and is widely distributed across the inspection images Px captured by a plurality of divisions.

晶片布局登錄部5登錄晶片布局,該晶片布局係規定相對於晶圓W之基準姿勢及基準位置的該晶圓之器件晶片C之配置資訊。The wafer layout registration unit 5 registers the wafer layout that specifies the arrangement information of the device chip C of the wafer W with respect to the reference posture and reference position of the wafer.

此外,於晶片布局中,將使晶圓W之缺口Wk朝向正下方之狀態設為基準姿勢,將該姿勢下之晶圓W之中心設為xy方向之基準位置(亦稱為原點),而規定器件晶片C之重複外觀圖案之縱橫排列及節距、偏移資訊等(即配置資訊)。In addition, in the wafer layout, the state in which the notch Wk of the wafer W faces directly downward is set as the reference posture, and the center of the wafer W in this posture is set as the reference position in the xy direction (also called the origin). The vertical and horizontal arrangement, pitch, offset information, etc. (i.e., configuration information) of the repeated appearance pattern of the device chip C are specified.

具體而言,在晶片布局登錄部5中,登錄就每一檢查類型所規定晶片布局之資料。因而,若基於該晶片布局進行攝像,則可進行分割拍攝並取得如圖3所示之基準圖像Pd及檢查圖像Px。Specifically, in the wafer layout registration unit 5, data specifying the wafer layout for each inspection type is registered. Therefore, if imaging is performed based on the wafer layout, divided imaging can be performed to obtain the reference image Pd and the inspection image Px as shown in FIG. 3 .

基準圖像登錄部6登錄成為檢查之基準之基準圖像。 具體而言,在基準圖像登錄部6中,登錄分割拍攝到之基準圖像Pd(所謂之分割圖像)、及小尺寸之宏觀檢查用基準圖像Pf(所謂之整體圖像)。The reference image registration unit 6 registers a reference image serving as a reference for inspection. Specifically, the reference image registration unit 6 registers the divided and photographed reference image Pd (so-called divided image) and the small-sized reference image Pf for macroscopic inspection (so-called whole image).

分割拍攝到之基準圖像Pd係表示形成於晶圓W上之器件晶片C之重複外觀圖案為正常之狀態之基準者。 具體而言,分割拍攝到之基準圖像Pd在微觀檢查下,為與分割拍攝到之檢查圖像Px之比較對象,且為用於針對各像素及像素群進行下述判定之基準者,即:若亮度值之差分或方差值等在預設之範圍內則判定為正常,若在該範圍外則判定為異常。 更具體而言,基準圖像Pd可例示代表預先選定之良品圖像之1個圖像、或預先選定複數個良品圖像並將其等平均化之圖像、基於良品學習法而產生之圖像等。The reference image Pd captured by division is a reference indicating that the repeating appearance pattern of the device wafer C formed on the wafer W is normal. Specifically, the reference image Pd captured by segmentation is the subject of comparison with the inspection image Px captured by segmentation under microscopic inspection, and is the basis for making the following determinations for each pixel and pixel group: : If the difference or variance value of the brightness value is within the preset range, it is judged as normal, if it is outside the range, it is judged as abnormal. More specifically, the reference image Pd may exemplify one image representing a pre-selected good product image, an image in which a plurality of good product images are selected in advance and averaged, or an image generated based on a good product learning method. Like etc.

另一方面,小尺寸之宏觀檢查用基準圖像Pf係表示晶圓W整體上為正常之狀態之基準者。具體而言,在基準圖像登錄部6中,就每一檢查類型登錄小尺寸之基準圖像Pf之資料。On the other hand, the small-sized reference image Pf for macroscopic inspection is a reference indicating that the wafer W is in a normal state as a whole. Specifically, in the reference image registration unit 6, data of the small-size reference image Pf is registered for each inspection type.

圖像處理部7對由攝像部3拍攝到之圖像進行處理。 具體而言,圖像處理部7具備下述功能,即:取得由攝像部3之攝像相機35拍攝到之圖像,進行自攝像區域F之中提取(亦稱為校正)檢查所需之部位之處理,產生檢查圖像Px及基準圖像Pd,或進行將複數個分割圖像彼此接合,產生1個圖像之處理,或是進行壓縮處理(省略減少構成圖像之像素數而低解析度化、或降低亮度值等之解析度之處理)。又,圖像處理部7構成為具備進行傾斜修正或明亮度修正、陰影修正、圖像之彎曲修正等之處理之功能,而適宜地進行處理。The image processing unit 7 processes the image captured by the imaging unit 3 . Specifically, the image processing unit 7 has a function of acquiring an image captured by the imaging camera 35 of the imaging unit 3 and extracting (also called correction) a portion required for inspection from the imaging area F. The process of generating the inspection image Px and the reference image Pd, or the process of joining a plurality of divided images to generate a single image, or the compression process (omitting to reduce the number of pixels constituting the image and lowering the resolution) The processing of resolution such as scaling, or reducing the brightness value, etc.). Furthermore, the image processing unit 7 is configured to have a function of performing processing such as tilt correction, brightness correction, shading correction, image curvature correction, etc., and performs processing appropriately.

更具體而言,圖像處理部7將分割拍攝到之基準圖像Pd接合,產生1個整體圖像(即大尺寸之宏觀檢查用基準圖像PF),或將分割拍攝到之檢查圖像Px接合,產生1個整體圖像(即大尺寸之宏觀檢查用檢查圖像PM)。進而,圖像處理部7對大尺寸之宏觀檢查用基準圖像PF進行壓縮處理,產生小尺寸之宏觀檢查用基準圖像Pf,對大尺寸之宏觀檢查用檢查圖像PM進行壓縮處理,產生小尺寸之宏觀檢查用檢查圖像Pm。More specifically, the image processing unit 7 joins the divided and photographed reference images Pd to generate one overall image (that is, a large-size reference image PF for macro inspection), or combines the divided and photographed inspection images Px are combined to generate one overall image (that is, a large-sized inspection image PM for macro inspection). Furthermore, the image processing unit 7 performs compression processing on the large-size reference image PF for macro-inspection to generate a small-size reference image Pf for macro-inspection, and performs compression processing on the large-size inspection image PM for macro-inspection to generate Small-sized inspection image Pm for macro inspection.

圖4係顯示將本發明具現化之形態之一例之大尺寸之宏觀檢查用圖像之影像的圖像圖。 在圖4(a)中例示大尺寸之宏觀檢查用基準圖像PF之影像,在圖4(b)中例示大尺寸之宏觀檢查用檢查圖像PM之影像。此外,在大尺寸之宏觀檢查用檢查圖像PM中包含潛藏於晶圓W之污染X。FIG. 4 is an image diagram showing an image of a large-sized macroscopic inspection image as an example of an embodiment of the present invention. FIG. 4( a ) illustrates an image of a large-sized reference image PF for macroscopic inspection, and FIG. 4( b ) illustrates an image of a large-sized inspection image PM for macroscopic inspection. In addition, the large-sized inspection image PM for macroscopic inspection contains contamination X hidden in the wafer W.

圖5係顯示將本發明具現化之形態之一例之小尺寸之宏觀檢查用圖像及差分之影像的圖像圖。 在圖5(a)中例示小尺寸之宏觀檢查用基準圖像Pf之影像,在圖5(b)中例示小尺寸之宏觀檢查用檢查圖像Pm之影像。此外,在小尺寸之宏觀檢查用檢查圖像Pm中包含潛藏於晶圓W之污染X。 圖5(c)例示將小尺寸之宏觀檢查用檢查圖像Pm與小尺寸之宏觀檢查用基準圖像Pf進行比較(即將亮度值進行差分)後之影像。FIG. 5 is an image diagram showing a small-sized macroscopic inspection image and a differential image as an example of an embodiment of the present invention. FIG. 5( a ) illustrates an image of the small-sized reference image Pf for macroscopic inspection, and FIG. 5( b ) illustrates an image of the small-sized inspection image Pm for macroscopic inspection. In addition, the small-sized inspection image Pm for macroscopic inspection includes contamination X hidden in the wafer W. FIG. 5(c) illustrates an image obtained by comparing the small-sized inspection image Pm for macroscopic inspection and the small-sized reference image Pf for macroscopic inspection (that is, differencing the brightness values).

比較檢查部8將由圖像處理部7產生之宏觀檢查用檢查圖像Pm與宏觀檢查用基準圖像Pf進行比較,而對檢查對象部位進行檢查。 具體而言,圖像處理部7將包含器件晶片C之重複外觀圖案之檢查對象部位之檢查圖像Pk與基準圖像Pf之對應之像素彼此進行比較,而針對各像素及像素群,若亮度值之差分或方差值等在預設之範圍內則判定為正常,若在該範圍外則判定為異常。The comparison inspection unit 8 compares the inspection image Pm for macro inspection generated by the image processing unit 7 with the reference image Pf for macro inspection, and inspects the inspection target part. Specifically, the image processing unit 7 compares the corresponding pixels of the inspection image Pk of the inspection target part including the repeated appearance pattern of the device wafer C with the reference image Pf, and determines whether the brightness of each pixel or pixel group is If the difference or variance value of the value is within the preset range, it is judged to be normal, and if it is outside the range, it is judged to be abnormal.

因而,在圖像處理部7中將檢查圖像Pk與基準圖像Pf進行比較處理,藉由提取亮度值之差分位於基準範圍外之部位,而可檢測(即宏觀檢查)污染X。Therefore, in the image processing unit 7, the inspection image Pk and the reference image Pf are compared, and the contamination X can be detected (that is, macroscopically inspected) by extracting a portion where the difference in brightness value is outside the reference range.

本發明之晶片布局登錄部5、基準圖像登錄部6、圖像處理部7、比較檢查部8係由具備圖像處理功能之電腦CP(即硬體)、及其執行程式等(即軟體)構成。 更具體而言,晶片布局登錄部5及基準圖像登錄部6係由電腦CP之記憶部(暫存器、記憶體等)或記錄媒體(HDD、SSD等)等之一部分構成。圖像處理部7係由電腦CP之圖像處理部(所謂之GPU)構成。比較檢查部8係由電腦CP之運算處理部及執行程式構成。The chip layout registration part 5, the reference image registration part 6, the image processing part 7, and the comparison inspection part 8 of the present invention are composed of a computer CP (i.e., hardware) with an image processing function, and its execution program (i.e., software). ) constitute. More specifically, the chip layout registration unit 5 and the reference image registration unit 6 are composed of a part of a memory unit (register, memory, etc.) or a recording medium (HDD, SSD, etc.) of the computer CP. The image processing unit 7 is composed of an image processing unit (so-called GPU) of the computer CP. The comparison inspection unit 8 is composed of a calculation processing unit and an execution program of the computer CP.

電腦CP例如擔負如以下之功能及作用: ・登錄每一檢查類型之攝像倍率及攝像位置、攝像路徑T、攝像間隔(節距、時間間隔)、給送速度等之資訊(所謂之檢查步序) ・登錄每一檢查類型之檢查條件(檢查對象部位之亮度值及方差值等之正常範圍等) ・與使用者介面(鍵盤、SW、監視器等)連接,進行各種資訊之輸入輸出 ・與控制部CN或外部之主電腦等連接,進行信號或資料之輸入輸出 此外,每一檢查類型之檢查步序及檢查條件亦被稱為處方資訊、檢查處方。Computer CP, for example, assumes the following functions and roles: ・Register information such as imaging magnification and imaging position, imaging path T, imaging interval (pitch, time interval), feed speed, etc. for each inspection type (so-called inspection steps) ・Register the inspection conditions for each inspection type (the normal range of the brightness value and variance value of the inspection target part, etc.) ・Connect with user interface (keyboard, SW, monitor, etc.) to input and output various information ・Connect with the control unit CN or an external host computer to input and output signals or data In addition, the inspection steps and inspection conditions of each inspection type are also called prescription information and inspection prescriptions.

控制部CN例如擔負如以下之功能及作用: ・對晶圓保持部2,輸出保持/解除晶圓W之信號 ・控制旋轉器機構34,切換所使用之物鏡(攝像倍率) ・對照明部31輸出發光觸發 ・對攝像相機35輸出攝像觸發 ・相對移動部4之驅動控制:監視x軸滑件41、y軸滑件42、旋轉機構43之當前位置,且輸出驅動用信號 ・將相對移動部4(x軸滑件41、y軸滑件42、旋轉機構43)之當前位置資訊輸出至電腦CP ・基於檢查處方控制各部The control unit CN is responsible for the following functions and effects, for example: ・Outputs a signal for holding/releasing the wafer W to the wafer holding unit 2 ・Control the rotator mechanism 34 to switch the objective lens (imaging magnification) used ・Outputs a light emission trigger to the lighting unit 31 ・Output imaging trigger to camera 35 ・Driving control of the relative moving part 4: Monitors the current positions of the x-axis slider 41, the y-axis slider 42, and the rotating mechanism 43, and outputs a driving signal ・Output the current position information of the relative moving part 4 (x-axis slider 41, y-axis slider 42, and rotation mechanism 43) to the computer CP ・Control each department based on inspection prescriptions

此外,自控制部9向攝像部3輸出攝像觸發,可例示如下述之方式: ・使攝像部3在x方向進行掃描移動,並且每移動特定距離便使照明光L1進行極短時間發光(所謂之頻閃發光)。 ・或,使攝像部3移動至特定位置並使其靜止,照射照明光L1而進行攝像(所謂之步進重複式)。In addition, the imaging trigger is output from the control unit 9 to the imaging unit 3 in the following manner: ・The imaging unit 3 is scanned and moved in the x direction, and the illumination light L1 is emitted for a very short time every time it moves a specific distance (so-called stroboscopic light emission). ・Or, the imaging unit 3 is moved to a specific position and held still, and the illumination light L1 is irradiated to perform imaging (so-called step-and-repeat type).

又,所謂攝像觸發意指對於攝像相機35及圖像處理部7之圖像擷取入指示、照明光L1之發光指示等。具體而言,作為攝像觸發,設為(情況1)在以攝像相機35可拍攝之時間(所謂之曝光時間)之期間,使照明光L1頻閃發光,或(情況2)在照射照明光L1之時間內進行攝像。或,攝像觸發並不限定於對於攝像相機35之指示,可為(情況3)對於取得圖像之圖像處理裝置之圖像擷取入指示。如此,亦可對應於自攝像相機35逐次輸出映像信號或映像資料之形態。In addition, the imaging trigger means an instruction to capture an image to the imaging camera 35 and the image processing unit 7 , an instruction to emit the illumination light L1 , and the like. Specifically, as the imaging trigger, (Case 1) the illumination light L1 is stroboscopically emitted during the time that the imaging camera 35 can take pictures (so-called exposure time), or (Case 2) the illumination light L1 is irradiated Take photos within the time limit. Alternatively, the imaging trigger is not limited to an instruction to the imaging camera 35, but may be (case 3) an image capture instruction to the image processing device that acquires the image. In this way, it can also correspond to the form in which the self-imaging camera 35 outputs image signals or image data one after another.

更具體而言,控制部CN係由電腦或可程式邏輯控制器等(即硬體)、及其執行程式等(即軟體)構成。More specifically, the control unit CN is composed of a computer or a programmable logic controller (i.e., hardware), and its execution program (i.e., software).

[基準圖像登錄及檢查流程] 圖6係將本發明具現化之形態之一例之流程圖。 在圖6(a)中,作為一系列之流程,按每一步驟顯示登錄用於使用晶圓外觀檢查裝置1進行晶圓W之宏觀檢查之宏觀檢查用基準圖像Pf之步序。此外,登錄電腦CP或控制部CN之執行程式,以可執行該等一系列之流程。 在圖6(b)中,作為一系列之流程,在每一步驟中顯示使用晶圓外觀檢查裝置1拍攝、檢查配置於晶圓W之器件晶片C之步序。[Benchmark image registration and inspection process] FIG. 6 is a flow chart illustrating an example of the embodiment of the present invention. In FIG. 6( a ), the steps for registering the macro-inspection reference image Pf for macro-inspection of the wafer W using the wafer appearance inspection apparatus 1 are shown step by step as a series of flows. In addition, by logging in to the execution program of the computer CP or the control unit CN, the series of processes can be executed. In FIG. 6( b ), as a series of processes, the steps of photographing and inspecting the device wafer C arranged on the wafer W using the wafer appearance inspection device 1 are shown in each step.

在檢查之前,按照以下之步序產生宏觀檢查用基準圖像,並預先予以登錄。將進行該一系列之流程之模式稱為「宏觀檢查用基準圖像產生模式」。Before inspection, follow the steps below to generate a reference image for macroscopic inspection and register it in advance. The mode in which this series of processes is performed is called "reference image generation mode for macroscopic inspection".

首先,選擇登錄之處方,將基準晶圓Wf載置於載置台20(步驟s1)。而後,將基準晶圓Wf對準(步驟s2)。First, a registered recipe is selected and the reference wafer Wf is placed on the mounting table 20 (step s1). Then, the reference wafer Wf is aligned (step s2).

一面使基準晶圓Wf相對移動,一面拍攝基準圖像Pd(步驟s3),將該基準圖像Ps登錄於基準圖像登錄部6(步驟s4)。The reference image Pd is captured while relatively moving the reference wafer Wf (step s3), and the reference image Ps is registered in the reference image registration unit 6 (step s4).

而後,判定是否已遍及基準晶圓Wf整體進行攝像(步驟s5),若拍攝未結束,則重複上述之步驟s2~s5。另一方面,若拍攝結束,則將基準圖像Pd接合,產生大尺寸之宏觀檢查用基準圖像PF,對該基準圖像PF進行壓縮處理,產生小尺寸之宏觀檢查用基準圖像Pf(步驟s6)。而後,將該基準圖像Pf登錄於基準圖像登錄部6(步驟s7)。Then, it is determined whether the entire reference wafer Wf has been imaged (step s5). If the image has not been completed, the above-mentioned steps s2 to s5 are repeated. On the other hand, when the imaging is completed, the reference images Pd are combined to generate a large-size reference image PF for macroscopic inspection, and the reference image PF is compressed to generate a small-sized reference image Pf for macroscopic inspection ( Step s6). Then, the reference image Pf is registered in the reference image registration unit 6 (step s7).

而後,傳出基準晶圓Wf(步驟s8),判定是否針對下一基準晶圓Wf進行同樣之處理(步驟s9)。在進行同樣之處理之情形下,重複上述之步驟s2~s9,在不進行同樣之處理之情形下,結束一系列之流程。Then, the reference wafer Wf is transferred out (step s8), and it is determined whether to perform the same process on the next reference wafer Wf (step s9). If the same processing is performed, the above-mentioned steps s2 to s9 are repeated. If the same processing is not performed, the series of processes is ended.

以下,針對進行通常之檢查之步序「微觀檢查/宏觀檢查模式」進行說明。The following explains the procedures for performing normal inspections "microscopic inspection/macroscopic inspection mode".

首先,選擇檢查處方,而決定晶圓W之檢查模式及順序,將成為檢查對象之晶圓W載置於載置台20(步驟s11)。而後,將成為檢查對象之晶圓W對準(步驟s12)。First, the inspection prescription is selected, the inspection mode and order of the wafer W are determined, and the wafer W to be inspected is placed on the mounting table 20 (step s11). Then, the wafer W to be inspected is aligned (step s12).

一面使成為檢查對象之晶圓W相對移動,一面拍攝檢查圖像Px(步驟s13)。判斷是否進行微觀檢查(步驟s14),在進行微觀檢查之情形下,基於預先登錄之檢查基準,對於各檢查圖像Px進行微觀檢查(步驟s15)。The inspection image Px is captured while relatively moving the wafer W to be inspected (step s13). It is determined whether to perform microscopic inspection (step s14). If microscopic inspection is performed, microscopic inspection is performed on each inspection image Px based on the pre-registered inspection standards (step s15).

而後,判定是否已遍及晶圓W整體進行攝像(步驟s16),若拍攝未結束,則重複上述之步驟s12~s16。另一方面,若拍攝結束,則判定是否進行宏觀檢查(步驟s20)。在進行宏觀檢查之情形下,基於預先登錄之檢查基準,將小尺寸之宏觀檢查用檢查圖像Pm與小尺寸之宏觀檢查用基準圖像Pf進行比較,而進行宏觀檢查(步驟s21)。Then, it is determined whether the entire wafer W has been imaged (step s16). If the image has not been completed, the above steps s12 to s16 are repeated. On the other hand, when the imaging is completed, it is determined whether to perform a macro inspection (step s20). When performing a macroscopic inspection, the small-sized inspection image Pm for macroscopic inspection is compared with the small-sized reference image Pf for macroscopic inspection based on a pre-registered inspection standard, and the macroscopic inspection is performed (step s21).

而後,傳出成為檢查對象之晶圓W(步驟s30),判定是否針對成為下一檢查對象之晶圓W,進行同樣之處理(步驟s31)。在進行同樣之處理之情形下,重複上述之步驟s12~s31,在不進行同樣之處理之情形下,結束一系列之流程。Then, the wafer W to be inspected is transmitted (step s30), and it is determined whether to perform the same process on the wafer W to be the next inspection object (step s31). If the same processing is performed, the above-mentioned steps s12 to s31 are repeated. If the same processing is not performed, the series of processes is ended.

根據本發明之晶圓外觀檢查裝置1及晶圓外觀檢查方法,能夠基於為了進行微觀檢查而取得之較小之區劃之放大圖像,自動地檢查作為宏觀檢查之範疇之尺寸比較大之損傷或污染、異物之附著等。因而,以1個檢查裝置,既可自動地進行微觀檢查,亦可自動地進行宏觀檢查。According to the wafer appearance inspection device 1 and the wafer appearance inspection method of the present invention, it is possible to automatically inspect relatively large-sized damage or damage that is a category of macro inspection based on an enlarged image of a smaller area obtained for micro inspection. Contamination, adhesion of foreign matter, etc. Therefore, with one inspection device, both microscopic inspection and macroscopic inspection can be automatically performed.

[變化例] 此外,在上文中例示在晶圓外觀檢查裝置1具備「宏觀檢查用基準圖像產生模式」之構成。因若為此構成,則可以1個檢查裝置,進行小尺寸之宏觀檢查用基準圖像Pf之產生及登錄,且進行宏觀檢查,而為較佳。[Example of changes] In the above, the wafer appearance inspection apparatus 1 is provided with the "reference image generation mode for macroscopic inspection" as an example. With this configuration, it is preferable that a single inspection device can generate and register a small-sized reference image Pf for macroscopic inspection and perform macroscopic inspection.

然而,可採用下述構成,即:在晶圓外觀檢查裝置1不具備「宏觀檢查用基準圖像產生模式」,經由外部記錄媒體(HDD、SSD、記憶體卡等)或電性通訊線路等,向外部之電腦或處理系統等輸出分割拍攝到之基準圖像Pd,使用該外部之電腦或處理系統等產生大尺寸之宏觀檢查用基準圖像PF,並產生小尺寸之宏觀檢查用基準圖像Pf。此情形下,採用所產生之小尺寸之宏觀檢查用基準圖像Pf經由外部記錄媒體(HDD、SSD、記憶體卡等)或電性通訊線路等,交接至晶圓外觀檢查裝置1,並登錄於基準圖像登錄部6。若為此構成,則以1個檢查裝置,既可進行微觀檢查,亦可進行宏觀檢查。However, it is possible to adopt a configuration in which the wafer appearance inspection apparatus 1 does not have a "reference image generation mode for macroscopic inspection", and the wafer appearance inspection device 1 can be configured to use an external recording medium (HDD, SSD, memory card, etc.) or an electrical communication line, etc. , output the segmented and photographed reference image Pd to an external computer or processing system, etc., use the external computer or processing system, etc. to generate a large-size reference image PF for macroscopic inspection, and generate a small-sized reference image for macroscopic inspection. Like Pf. In this case, the generated small-sized reference image Pf for macro inspection is transferred to the wafer appearance inspection device 1 via an external recording medium (HDD, SSD, memory card, etc.) or an electrical communication line, and is logged in. in the reference image registration section 6. With this configuration, both microscopic inspection and macroscopic inspection can be performed with one inspection device.

此外,在上文中,作為晶圓外觀檢查裝置1,例示拍攝形成於檢查對象晶圓W之器件晶片C之重複外觀圖案之外觀圖像,與基準圖像Pf進行比較,而進行該檢查對象晶圓W及該器件晶片C之檢查之構成及步序。然而,在應用本發明上,檢查對象並不限定於形成於晶圓W之器件晶片C之重複外觀圖案,可為設定於晶圓W之無圖案區劃。此情形下,作為基準圖像Pd,預先登錄表示設定於晶圓W之無圖案區劃為正常之狀態之基準者。而且,在攝像部3中,拍攝設定於成為檢查對象之晶圓W之無圖案區劃,按照與上述同樣之步序以比較檢查部8進行檢查。In addition, in the above, as an example, the wafer appearance inspection apparatus 1 captures an appearance image of the repeated appearance pattern of the device wafer C formed on the inspection target wafer W, compares it with the reference image Pf, and performs the inspection on the inspection target wafer W. Circle W and the composition and steps of inspection of the device wafer C. However, when applying the present invention, the inspection object is not limited to the repeated appearance pattern of the device chip C formed on the wafer W, but may be a pattern-free area set on the wafer W. In this case, as the reference image Pd, a reference indicating that the non-patterned area set on the wafer W is in a normal state is registered in advance. Then, the imaging unit 3 captures an image of a pattern-free area set on the wafer W to be inspected, and the comparison inspection unit 8 performs inspection in the same procedure as described above.

1:晶圓外觀檢查裝置 1f:裝置框架 2:晶圓保持部 3:攝像部 4:相對移動部 5:晶片布局登錄部 6:基準圖像登錄部 7:圖像處理部 8:比較檢查部 20:載置台 30:鏡筒 31:照明部 32:半反射鏡 33a,33b:物鏡 34:旋轉器機構 35:攝像相機 36:攝像元件 41:x軸滑件 42:y軸滑件 43:旋轉機構 C:器件晶片 C(2,1)~C(5,1):器件晶片 CN:控制部 CP:電腦 F:攝像區域 L1:照明光 L2:自晶圓側入射之光(反射光、散射光) Pd:分割拍攝到之基準圖像 PF:宏觀檢查用基準圖像(大尺寸) Pf:宏觀檢查用基準圖像(小尺寸) PM:宏觀檢查用檢查圖像(大尺寸) Pm:宏觀檢查用檢查圖像(小尺寸) Px:拍攝到之檢查圖像 Vs:箭頭 W:晶圓(檢查対象)/工件 Wk:缺口 Wf:基準晶圓 X:檢測對象(污染等) x:軸/方向 y:軸/方向 z:軸/方向 θ:方向1: Wafer appearance inspection device 1f:Device frame 2: Wafer holding part 3:Camera Department 4: Relative movement part 5: Chip layout registration department 6: Reference image registration part 7:Image processing department 8: Comparative Inspection Department 20: Loading platform 30: Lens tube 31:Lighting Department 32: Half mirror 33a,33b:Objective lens 34:Rotator mechanism 35:Video camera 36:Camera components 41:x-axis slider 42:y-axis slider 43: Rotating mechanism C: device wafer C(2,1)~C(5,1): device wafer CN:Control Department CP:Computer F:Camera area L1: illumination light L2: Light incident from the wafer side (reflected light, scattered light) Pd: reference image captured by segmentation PF: Reference image for macroscopic examination (large size) Pf: Reference image for macroscopic examination (small size) PM: Inspection image for macro inspection (large size) Pm: Inspection image for macro inspection (small size) Px: captured inspection image Vs:arrow W: Wafer (inspection object)/workpiece Wk: gap Wf: reference wafer X: Detection object (pollution, etc.) x: axis/direction y: axis/direction z: axis/direction θ: direction

圖1係顯示將本發明具現化之形態之一例之整體構成的概略圖。 圖2係顯示將本發明具現化之形態之一例之拍攝之樣態的概念圖。 圖3(a)、(b)係顯示將本發明具現化之形態之一例之基準晶圓及成為檢查對象之晶圓與器件晶片之配置例的俯視圖。 圖4(a)、(b)係顯示將本發明具現化之形態之一例之大尺寸之宏觀檢查用圖像之影像的圖像圖。 圖5(a)~(c)係顯示將本發明具現化之形態之一例之小尺寸之宏觀檢查用圖像及差分之影像的圖像圖。 圖6(a)、(b)係將本發明具現化之形態之一例之流程圖。FIG. 1 is a schematic diagram showing the overall structure of an example of an embodiment of the present invention. FIG. 2 is a conceptual diagram showing a photographing aspect of an example of the embodiment of the present invention. 3(a) and 3(b) are plan views showing an arrangement example of a reference wafer, a wafer to be inspected, and a device wafer as an example of the embodiment of the present invention. FIGS. 4(a) and 4(b) are image diagrams showing images of a large-sized macroscopic inspection image as an example of an embodiment of the present invention. FIGS. 5(a) to 5(c) are image diagrams showing small-sized macroscopic inspection images and differential images, which are examples of embodiments of the present invention. 6(a) and (b) are flowcharts illustrating an example of the embodiment of the present invention.

1:晶圓外觀檢查裝置 1: Wafer appearance inspection device

1f:裝置框架 1f:Device frame

2:晶圓保持部 2: Wafer holding part

3:攝像部 3:Camera Department

4:相對移動部 4: Relative movement part

6:基準圖像登錄部 6: Reference image registration part

7:圖像處理部 7:Image processing department

8:比較檢查部 8: Comparative Inspection Department

20:載置台 20: Loading platform

30:鏡筒 30: Lens tube

31:照明部 31:Lighting Department

32:半反射鏡 32: Half mirror

33a,33b:物鏡 33a,33b:Objective lens

34:旋轉器機構 34:Rotator mechanism

35:攝像相機 35:Video camera

36:攝像元件 36:Camera components

41:x軸滑件 41:x-axis slider

42:y軸滑件 42:y-axis slider

43:旋轉機構 43: Rotating mechanism

C:器件晶片 C: device wafer

CN:控制部 CN:Control Department

CP:電腦 CP:Computer

F:攝像區域 F:Camera area

L1:照明光 L1: illumination light

L2:自晶圓側入射之光(反射光、散射光) L2: Light incident from the wafer side (reflected light, scattered light)

Pd:分割拍攝到之基準圖像 Pd: reference image captured by segmentation

PF:宏觀檢查用基準圖像(大尺寸) PF: Reference image for macroscopic examination (large size)

Pf:宏觀檢查用基準圖像(小尺寸) Pf: Reference image for macroscopic examination (small size)

PM:宏觀檢查用檢查圖像(大尺寸) PM: Inspection image for macro inspection (large size)

Pm:宏觀檢查用檢查圖像(小尺寸) Pm: Inspection image for macro inspection (small size)

Px:拍攝到之檢查圖像 Px: captured inspection image

W:晶圓(檢查対象)/工件 W: Wafer (inspection object)/workpiece

θ:方向 θ: direction

Claims (2)

一種晶圓外觀檢查裝置,其係拍攝形成於檢查對象晶圓之重複圖案或設定於檢查對象晶圓之無圖案區劃之外觀圖像,且將該拍攝到之圖像與預先登錄之基準圖像進行比較而進行檢查者,其特徵在於具備:攝像機構,其拍攝就前述重複圖案或前述無圖案區劃之每一者設定之檢查對象部位;圖像處理部,其對由前述攝像機構拍攝到之圖像進行處理;基準圖像登錄部,其預先登錄前述基準圖像,該基準圖像為對於前述檢查對象部位之圖像的好壞判定基準;及比較檢查部,其將拍攝到前述檢查對象部位之檢查圖像與前述基準圖像進行比較,而檢查潛藏於該檢查對象部位之缺陷;且前述比較檢查部具備:微觀檢查模式,其檢查潛藏於前述檢查對象部位內之缺陷;及宏觀檢查模式,其跨複數個前述檢查對象部位而檢查前述檢查對象晶圓中潛在之缺陷;且前述晶圓外觀檢查裝置具備宏觀檢查用基準圖像產生模式,該模式係在執行前述宏觀檢查模式前,產生宏觀檢查用基準圖像,該宏觀檢查用基準圖像係用於檢測前述檢查對象晶圓中潛在之缺陷的好壞判定基準;且在前述宏觀檢查用基準圖像產生模式下,由前述攝像機構,對形成於成為檢查基準之基準晶圓之重複圖案或設定於基準晶圓之無圖案區劃進行分割拍攝,由前述圖像處理部,將該分割拍攝到之基準圖像彼此接合而產生大 尺寸之宏觀檢查用基準圖像後,對該大尺寸之宏觀檢查用基準圖像進行壓縮處理,產生小尺寸之宏觀檢查用基準圖像,將前述小尺寸之宏觀檢查用基準圖像預先登錄於前述基準圖像登錄部;在前述宏觀檢查模式下,由前述攝像機構,對前述重複圖案或前述無圖案區劃進行分割拍攝,由前述圖像處理部,將該分割拍攝到之檢查圖像彼此接合而產生大尺寸之宏觀檢查用檢查圖像後,對該大尺寸之宏觀檢查用檢查圖像進行壓縮處理,產生小尺寸之宏觀檢查用檢查圖像;由前述比較檢查部,將前述小尺寸之宏觀檢查用檢查圖像與前述小尺寸之宏觀檢查用基準圖像進行比較,而檢查前述檢查對象晶圓中潛在之缺陷。 A wafer appearance inspection device that captures an appearance image of a repeating pattern formed on a wafer to be inspected or a pattern-free area set on a wafer to be inspected, and compares the captured image with a pre-registered reference image A device for comparing and inspecting is characterized by having: a camera unit that photographs an inspection target part set for each of the aforementioned repeating pattern or the aforementioned non-pattern area; and an image processing unit that processes the image captured by the aforementioned camera unit. image processing; a reference image registration unit that registers the reference image in advance, which is a criterion for determining whether the image of the inspection target part is good or bad; and a comparison inspection unit that photographs the inspection object The inspection image of the part is compared with the aforementioned reference image, and the defects hidden in the inspection object part are inspected; and the aforementioned comparative inspection unit has: a microscopic inspection mode, which inspects the defects hidden in the inspection object part; and a macro inspection. mode, which spans a plurality of the aforementioned inspection target locations to inspect potential defects in the aforementioned inspection target wafer; and the aforementioned wafer appearance inspection device is equipped with a reference image generation mode for macro inspection, and this mode is before executing the aforementioned macro inspection mode. Generate a macro-inspection reference image, which is a quality judgment standard for detecting potential defects in the inspection target wafer; and in the macro-inspection reference image generation mode, the macro-inspection reference image is generated by the aforementioned imaging The mechanism divides and photographs the repeating pattern formed on the reference wafer that serves as the inspection reference or the pattern-free area set on the reference wafer, and the aforementioned image processing unit joins the divided and photographed reference images to generate a large-scale image. After generating a large-size reference image for macro-inspection, the large-size reference image for macro-inspection is compressed to generate a small-size reference image for macro-inspection, and the aforementioned small-size reference image for macro-inspection is pre-registered in The reference image registration unit; in the macro inspection mode, the imaging mechanism divides and photographs the repeating pattern or the pattern-free area, and the image processing unit joins the divided and photographed inspection images to each other. After the large-size inspection image for macro inspection is generated, the large-size inspection image for macro inspection is compressed to generate a small-size inspection image for macro inspection; the aforementioned comparison inspection unit compresses the aforementioned small-size inspection image. The inspection image for macro inspection is compared with the aforementioned small-sized reference image for macro inspection, and potential defects in the aforementioned inspection target wafer are inspected. 一種晶圓外觀檢查方法,其係拍攝形成於檢查對象晶圓之重複圖案或設定於檢查對象晶圓之無圖案區劃之外觀圖像,且將該拍攝到之圖像與預先登錄之基準圖像進行比較而進行檢查者,其特徵在於使用:晶圓保持機構,其保持前述檢查對象晶圓;攝像機構,其拍攝就前述重複圖案或前述無圖案區劃之每一者設定之特定範圍;相對移動機構,其使前述晶圓保持機構與前述攝像機構相對移動;及圖像處理機構,其對由前述攝像機構拍攝到之圖像進行處理;且前 述晶圓外觀檢查方法具有如下步驟:保持成為檢查基準之基準晶圓;一面逐次變更攝像場所,一面對形成於基準晶圓之重複圖案或形成於基準晶圓之無圖案區劃進行分割拍攝,將該分割拍攝到之基準圖像彼此接合而產生大尺寸之宏觀檢查用基準圖像後,將該大尺寸之宏觀檢查用基準圖像壓縮,產生小尺寸之宏觀檢查用基準圖像;保持前述檢查對象晶圓;一面逐次變更攝像場所,一面對形成於前述檢查對象晶圓之重複圖案或形成於前述檢查對象晶圓之無圖案區劃進行分割拍攝,將該分割拍攝到之檢查圖像彼此接合而產生大尺寸之宏觀檢查用檢查圖像後,將該大尺寸之宏觀檢查用檢查圖像壓縮,產生小尺寸之宏觀檢查用檢查圖像;及將前述小尺寸之宏觀檢查用檢查圖像與前述小尺寸之宏觀檢查用基準圖像進行比較,而對前述檢查對象晶圓進行宏觀檢查。 A wafer appearance inspection method that captures an appearance image of a repeating pattern formed on a wafer to be inspected or a pattern-free area set on a wafer to be inspected, and compares the captured image with a pre-registered reference image The method for performing inspection by comparison is characterized by using: a wafer holding mechanism that holds the wafer to be inspected; a camera mechanism that captures a specific range set for each of the repeating pattern or the non-pattern area; and relative movement. a mechanism that relatively moves the wafer holding mechanism and the camera mechanism; and an image processing mechanism that processes the images captured by the camera mechanism; and The wafer appearance inspection method has the following steps: holding a reference wafer as an inspection standard; and sequentially changing the imaging location while dividing and photographing a repeating pattern formed on the reference wafer or a pattern-free area formed on the reference wafer. After the divided and photographed reference images are joined together to generate a large-size reference image for macroscopic inspection, the large-sized reference image for macroscopic inspection is compressed to generate a small-sized reference image for macroscopic inspection; the above is maintained. The wafer to be inspected; while changing the imaging location one after another, the repeating pattern formed on the wafer to be inspected or the non-pattern area formed on the wafer to be inspected is divided and photographed, and the inspection images captured by the divisions are mutually photographed. After combining to generate a large-size inspection image for macro-inspection, compress the large-size inspection image for macro-inspection to generate a small-size inspection image for macro-inspection; and combine the aforementioned small-size inspection image for macro-inspection The wafer to be inspected is macroscopically inspected by comparison with the small-sized reference image for macroscopic inspection.
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