TWI845721B - Wafer appearance inspection device and method - Google Patents
Wafer appearance inspection device and method Download PDFInfo
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
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- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
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Abstract
本發明之課題在於提供一種晶圓外觀檢查裝置及方法,其即便在晶圓上存在跨檢查區域及非檢查區域而形成之不完整晶片,但只要是晶圓之檢查區域則進行以完整晶片為準之檢查,可對於晶圓之檢查區域整體獲得期望之檢查結果。 The subject of the present invention is to provide a wafer appearance inspection device and method, which can obtain the expected inspection results for the inspection area of the wafer as a whole, even if there are incomplete chips formed by crossing the inspection area and the non-inspection area on the wafer, as long as it is the inspection area of the wafer, the inspection is carried out based on the complete chip.
本發明之晶圓外觀檢查裝置及方法係拍攝形成於晶圓上之器件晶片之重複外觀圖案之檢查對象部位,且與基準圖像進行比較而進行該器件晶片之檢查者,且對於拍攝到跨檢查區域及非檢查區域而形成之不完整晶片的圖像,基於該圖像被拍攝到之晶圓上之位置資訊及晶片布局,將構成該圖像之像素中相當於非檢查區域之像素之亮度值置換處理為基準圖像之亮度值,而產生檢查圖像;且將所產生之檢查圖像與基準圖像進行比較,而對檢查對象部位進行檢查。 The wafer appearance inspection device and method of the present invention is to photograph the inspection target part of the repeated appearance pattern of the device chip formed on the wafer, and compare it with the reference image to inspect the device chip, and for the image of the incomplete chip formed by photographing the inspection area and the non-inspection area, based on the position information on the wafer where the image is photographed and the chip layout, the brightness value of the pixel corresponding to the non-inspection area in the pixels constituting the image is replaced with the brightness value of the reference image to generate an inspection image; and the generated inspection image is compared with the reference image to inspect the inspection target part.
Description
本發明係關於一種將拍攝到形成於晶圓上之器件晶片之重複外觀圖案之檢查圖像與基準圖像進行比較,而進行該器件晶片之檢查之晶圓外觀檢查裝置及方法。 The present invention relates to a wafer appearance inspection device and method for inspecting a device chip formed on a wafer by comparing an inspection image of a repeated appearance pattern captured with a reference image.
半導體器件當在1片半導體晶圓上形成多數個半導體器件電路(即器件晶片之重複外觀圖案)後,單片化為一個一個之晶片零件,該晶片零件被封裝,作為電子零件以單體出貨或組裝入電氣產品。 After forming a plurality of semiconductor device circuits (i.e., the repeated appearance pattern of the device chip) on a semiconductor wafer, semiconductor devices are singulated into individual chip parts, which are packaged and shipped as single electronic parts or assembled into electrical products.
而且,將拍攝到在各個晶片零件單片化前,形成於晶圓上之器件晶片之重複外觀圖案之檢查圖像與基準圖像進行比較而進行檢查(例如專利文獻1),或進行使用探針之電性檢查(例如專利文獻2)。 Furthermore, inspection is performed by comparing inspection images of repeated appearance patterns of device chips formed on a wafer before individual chip parts are singulated with reference images (e.g., Patent Document 1), or electrical inspection using a probe (e.g., Patent Document 2).
在晶圓上呈縱橫矩陣狀以重複圖案形成之器件晶片存在經切割而產品化之「完整晶片」、及因圖案之一部分殘缺而無法產品化之「不完整晶片」。而且,對於完整晶片拍攝外觀,與基準圖像進行比較而進行好壞判定(所謂之檢查),但另一方面,為了縮短處理時間而對於不完整晶片,省略檢查(例如,專利文獻3)。 Device chips formed with repeated patterns in a vertical and horizontal matrix on a wafer include "complete chips" that are cut and commercialized, and "incomplete chips" that cannot be commercialized because part of the pattern is missing. In addition, the appearance of the complete chip is photographed and compared with the reference image to determine whether it is good or bad (so-called inspection), but on the other hand, in order to shorten the processing time, the inspection is omitted for incomplete chips (for example, Patent Document 3).
[先前技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特開2007-155610號公報 [Patent Document 1] Japanese Patent Publication No. 2007-155610
[專利文獻2]日本特開平2-290036號公報 [Patent Document 2] Japanese Patent Publication No. 2-290036
[專利文獻3]日本特開平4-276642號公報 [Patent Document 3] Japanese Patent Publication No. 4-276642
然而,若對於完整晶片進行外觀檢查,但另一方面省略不完整晶片,則即便在不完整晶片上附帶瑕疵或異物等,該晶圓亦被投入下一工序。 However, if the appearance inspection is performed on the complete wafer, but the incomplete wafer is omitted, even if the incomplete wafer has defects or foreign matter, the wafer is put into the next process.
因而,若之後存在探針檢查,則有不完整晶片上之瑕疵或異物等與探針(probe)接觸,引起探針破損或晶圓破裂、缺損等諸多問題之虞。 Therefore, if there is a probe inspection afterwards, there is a risk that defects or foreign matter on the incomplete chip will come into contact with the probe, causing damage to the probe or cracking or defecting of the wafer, among other problems.
另一方面,根據先前之外觀檢查手法,在拍攝到不完整晶片之檢查圖像之一部分包含缺損,在與基準圖像進行比較時,該部分被判定為異常,成為疑似缺陷檢測之要因。又,因該疑似缺陷檢測,而處理時間增加。 On the other hand, according to the previous appearance inspection method, when a part of the inspection image of the incomplete chip is captured and contains defects, when compared with the reference image, this part is judged as abnormal, which becomes the cause of suspected defect detection. In addition, the processing time increases due to the suspected defect detection.
因而,本發明係鑒於上述問題點而完成者,目的在於提供一種晶圓外觀檢查裝置及方法,其即便在晶圓上存在 跨檢查區域及非檢查區域而形成之不完整晶片,但只要是晶圓之檢查區域則進行以完整晶片為準之檢查,可對於晶圓之檢查區域整體獲得所期望之檢查結果,亦可防止處理時間增加。 Therefore, the present invention is completed in view of the above-mentioned problems, and its purpose is to provide a wafer appearance inspection device and method, which can obtain the desired inspection results for the inspection area of the wafer as a whole, and can also prevent the increase of processing time, even if there is an incomplete chip formed by crossing the inspection area and the non-inspection area on the wafer, as long as it is the inspection area of the wafer, the inspection is carried out based on the complete chip.
為了解決以上之問題,本發明之一態樣係一種晶圓外觀檢查裝置,其係拍攝形成於晶圓上之器件晶片之重複外觀圖案之檢查對象部位,且與基準圖像進行比較而進行該器件晶片之檢查者,且具備:晶圓保持部,其保持晶圓;攝像部,其拍攝包含檢查對象部位之圖像;相對移動部,其使晶圓保持部與攝像部相對移動;基準圖像登錄部,其登錄基準圖像;晶片布局登錄部,其登錄晶片布局,該晶片布局係規定相對於晶圓之基準姿勢及基準位置的該晶圓之檢查區域及非檢查區域;及圖像處理部,其對由攝像部拍攝到之圖像進行處理;且圖像處理部具備:動態遮罩處理部,其對於拍攝到跨檢查區域及非檢查區域而形成之不完整晶片之檢查對象部位的圖像,基於該圖像被拍攝到之晶圓上之位置資訊及晶片布局,將構成該圖像之像素中相當於非檢查區域之像素之亮度值置換處理為基準圖像之亮度值,而產生檢查圖像;及比較檢查部,其將由動態遮罩處理部產生之檢查圖像與基準圖像進行比較,而對檢查對象部位進行檢查。 In order to solve the above problems, one aspect of the present invention is a wafer appearance inspection device, which photographs the inspection target part of the repeated appearance pattern of the device chip formed on the wafer, and compares it with the reference image to inspect the device chip, and has: a wafer holding part, which holds the wafer; a camera part, which photographs the image including the inspection target part; a relative moving part, which makes the wafer holding part and the camera part move relative to each other; a reference image registration part, which registers the reference image; a chip layout registration part, which registers the chip layout, and the chip layout is the inspection area of the wafer that specifies the reference posture and reference position of the wafer. and non-inspection area; and an image processing unit, which processes the image taken by the camera unit; and the image processing unit has: a dynamic mask processing unit, which replaces the brightness value of the pixels corresponding to the non-inspection area in the pixels constituting the image with the brightness value of the reference image based on the position information on the wafer where the image is taken and the chip layout, and generates an inspection image; and a comparison inspection unit, which compares the inspection image generated by the dynamic mask processing unit with the reference image, and inspects the inspection object part.
又,本發明之另一態樣係一種晶圓外觀檢查方法,其係拍攝形成於晶圓上之器件晶片之重複外觀圖案之檢查對象部位,且與基準圖像進行比較而進行該器件晶片之檢查者,且具有:預先登錄基準圖像之步驟;預先登錄晶片布局之步驟,該晶片布局係規定相對於晶圓之基準姿勢及基準位置的之該晶圓之檢查區域及非檢查區域;一面使晶圓與攝像機構相對移動,一面拍攝包含檢查對象部位之圖像之步驟;及處理圖像之步驟;且具有如下步驟:對於拍攝到跨檢查區域及非檢查區域而形成之不完整晶片的圖像,基於該圖像被拍攝到之晶圓上之位置資訊及晶片布局,將構成該圖像之像素中相當於非檢查區域之像素之亮度值置換處理為基準圖像之亮度值,而產生檢查圖像;及將檢查圖像與基準圖像進行比較,而對檢查對象部位進行檢查。 Another aspect of the present invention is a wafer appearance inspection method, which is to photograph the inspection target part of the repeated appearance pattern of the device chip formed on the wafer, and compare it with the reference image to inspect the device chip, and has: the step of pre-registering the reference image; the step of pre-registering the chip layout, the chip layout is to define the inspection area and non-inspection area of the wafer relative to the reference posture and reference position of the wafer; while the wafer and the camera mechanism are moved relative to each other, the camera is photographed. The method comprises the steps of taking an image of the inspection object part; and processing the image; and has the following steps: for an image of an incomplete chip formed by crossing the inspection area and the non-inspection area, based on the position information on the wafer where the image is taken and the chip layout, the brightness values of the pixels constituting the image corresponding to the non-inspection area are replaced with the brightness values of the reference image to generate an inspection image; and the inspection image is compared with the reference image to inspect the inspection object part.
根據此晶圓外觀檢查裝置及方法,即便為外緣形狀在每一拍攝位置不同之不完整晶片,亦可相應於拍攝位置,進行動態的遮罩處理,產生檢查圖像,並將檢查圖像與基準圖像進行比較,而進行所期望之檢查。 According to this wafer appearance inspection device and method, even if the outer edge shape of an incomplete wafer is different at each shooting position, dynamic mask processing can be performed according to the shooting position to generate an inspection image, and the inspection image can be compared with the reference image to perform the desired inspection.
本發明即便在晶圓上存在跨檢查區域及非檢查區域而形成之不完整晶片,但只要是晶圓之檢查區域則進行以完整晶片為準之檢查,可對於晶 圓之檢查區域整體獲得所期望之檢查結果,亦可防止處理時間增加。 Even if there is an incomplete chip on the wafer that crosses the inspection area and the non-inspection area, the inspection of the inspection area of the wafer is carried out based on the inspection of the complete chip, and the expected inspection results can be obtained for the inspection area of the wafer as a whole, and the processing time can be prevented from increasing.
1:晶圓外觀檢查裝置 1: Wafer appearance inspection device
1f:裝置框架 1f: Device frame
2:晶圓保持部 2: Wafer holding part
3:攝像部 3: Camera Department
4:相對移動部 4: Relative moving part
5:晶片布局登錄部 5: Chip layout registration department
6:基準圖像登錄部 6: Standard image registration department
7:圖像處理部 7: Image processing department
20:載置台 20: Loading platform
30:鏡筒 30: Lens barrel
31:照明部 31: Lighting Department
32:半反射鏡 32: Half-reflective mirror
33a,33b:物鏡 33a,33b:Objective lens
34:旋轉器機構 34: Rotator mechanism
35:攝像相機 35: Camera
36:攝像元件 36: Imaging components
41:X軸滑件 41: X-axis slide
42:Y軸滑件 42: Y-axis slide
43:旋轉機構 43: Rotating mechanism
71:動態遮罩處理部 71: Dynamic mask processing unit
72:比較檢查部 72: Comparative Inspection Department
C:器件晶片 C: Device chip
C(2,2)~C(5,2):器件晶片 C(2,2)~C(5,2): device chip
Cb:不完整晶片 Cb: Incomplete chip
CN:控制部 CN: Control Department
Cn:完整晶片 Cn: Complete chip
CP:電腦 CP: Computer
F:攝像區域(視野) F: Photography area (field of view)
L1:照明光 L1: Illumination light
L2:自晶圓側入射之光(反射光、散射光) L2: Light incident from the wafer side (reflected light, scattered light)
Pf:基準圖像 Pf: Baseline image
Pk:檢查圖像(處理後) Pk: Check image (after processing)
Ps:圖像 Ps:Image
Ri:檢查區域 Ri: Inspection area
Rn:非檢查區域 Rn: Non-inspection area
T:拍攝路徑 T: Shooting route
Vs:箭頭 Vs: Arrow
W:晶圓/工件 W: Wafer/workpiece
Wk:缺口 Wk: Gap
X:缺陷/軸/方向 X: Defect/axis/direction
Y:虛線/軸/方向 Y: dashed line/axis/direction
θ:方向 θ: direction
圖1係顯示將本發明具現化之形態之一例之整體構成的概略圖。 FIG1 is a schematic diagram showing the overall structure of an example of a form in which the present invention is embodied.
圖2係顯示將本發明具現化之形態之一例之拍攝之樣態的概念圖。 FIG2 is a conceptual diagram showing a shooting mode of an example of a form in which the present invention is embodied.
圖3係顯示將本發明具現化之形態之一例之器件晶片C各者之位置關係的俯視圖。 FIG3 is a top view showing the positional relationship of each device chip C in an example of a form that embodies the present invention.
圖4(a)~(d)係顯示將本發明具現化之形態之一例之圖像Ps、基準圖像Pf、檢查圖像Pk、檢查圖像Pk與基準圖像Pf之差分之影像的圖像圖。 Figure 4 (a) to (d) are image diagrams showing an example of a form in which the present invention is embodied, including an image Ps, a reference image Pf, a test image Pk, and an image of a difference between the test image Pk and the reference image Pf.
圖5(a)~(d)係顯示將本發明具現化之形態之一例之圖像Ps、基準圖像Pf、檢查圖像Pk之各像素之亮度值、以及檢查圖像Pk與基準圖像Pf之亮度值之差分之影像的圖像圖。 Figure 5 (a) to (d) are image diagrams showing an example of a form in which the present invention is embodied, including the brightness values of each pixel of the image Ps, the reference image Pf, the inspection image Pk, and the difference between the brightness values of the inspection image Pk and the reference image Pf.
圖6係將本發明具現化之形態之一例之流程圖。 FIG6 is a flow chart showing an example of a form in which the present invention is embodied.
以下,針對用於實施本發明之形態,一面利用圖一面進行說明。此外,在以下之說明中,將正交座標系之3軸設為X、Y、Z,將水平方向表現為X方向、Y方向,將與XY平面垂直之方向(即重力方向)表現為Z方向。又,Z方向將與重力相反之方向表現為上,將重力作用之方向表現為下。又,將以Z方向為中心軸旋轉之方向設為θ方向。 The following is a description of the form used to implement the present invention with reference to the drawings. In addition, in the following description, the three axes of the orthogonal coordinate system are set as X, Y, and Z, the horizontal direction is represented as the X direction and the Y direction, and the direction perpendicular to the XY plane (i.e., the direction of gravity) is represented as the Z direction. In addition, the Z direction represents the direction opposite to gravity as up, and the direction in which gravity acts as down. In addition, the direction of rotation with the Z direction as the central axis is set as the θ direction.
圖1係顯示將本發明具現化之形態之一例之整體構成的概略圖。在圖1中概略地顯示構成本發明之晶圓外觀檢查裝置1之各部。 FIG1 is a schematic diagram showing the overall structure of an example of a form in which the present invention is embodied. FIG1 schematically shows the various parts of the wafer appearance inspection device 1 of the present invention.
晶圓外觀檢查裝置1拍攝形成於晶圓W上之器件晶片C之重複外觀圖案之檢查對象部位,與基準圖像Pf進行比較,而進行該器件晶片C之檢查。 The wafer appearance inspection device 1 photographs the inspection target portion of the repeated appearance pattern of the device chip C formed on the wafer W, compares it with the reference image Pf, and inspects the device chip C.
具體而言,晶圓外觀檢查裝置1一面逐次變更攝像場所,一面拍攝檢查對象部位,對拍攝到之圖像Ps進行處理,產生檢查圖像Pk,藉由將檢查圖像Pk與基準圖像Pf進行比較,而遍及晶圓W全面,進行在器件晶片C之電路圖案是否無短路或斷線等、或是否未附帶異物或瑕疵等所期望之檢查。晶圓外觀檢查裝置1具備:晶圓保持部2、攝像部3、相對移動部4、晶片布局登錄部5、基準圖像登錄部6、圖像處理部7、及控制部CN等。 Specifically, the wafer appearance inspection device 1 successively changes the shooting location while shooting the inspection object part, processes the shot image Ps, generates the inspection image Pk, and compares the inspection image Pk with the reference image Pf to conduct the desired inspection on the whole wafer W, such as whether the circuit pattern of the device chip C has no short circuit or broken line, or whether it has no foreign matter or defects. The wafer appearance inspection device 1 has: a wafer holding part 2, a shooting part 3, a relative moving part 4, a chip layout registration part 5, a reference image registration part 6, an image processing part 7, and a control part CN, etc.
晶圓保持部2保持晶圓W。具體而言,晶圓保持部2對晶圓W自下表面側一面保持水平狀態一面予以支撐。更具體而言,晶圓保持部2具備上表面水平之載置台20。載置台20在與晶圓W接觸之部分設置有槽部及孔部,該等槽部及孔部經由切換閥等與真空泵等之負壓產生機構連接。而且,晶圓保持部2藉由將該等槽部及孔部切換為負壓狀態或大氣釋放狀態,而可保持晶圓W或解除保持。 The wafer holding part 2 holds the wafer W. Specifically, the wafer holding part 2 supports the wafer W from the lower surface while keeping it horizontal. More specifically, the wafer holding part 2 has a mounting table 20 with a horizontal upper surface. The mounting table 20 is provided with grooves and holes in the portion in contact with the wafer W, and the grooves and holes are connected to a negative pressure generating mechanism such as a vacuum pump via a switching valve. Moreover, the wafer holding part 2 can hold or release the wafer W by switching the grooves and holes to a negative pressure state or an atmosphere release state.
攝像部3拍攝包含檢查對象部位之圖像Ps。此處,所謂包含檢查對象部位之圖像Ps係包含成為檢查對象之器件晶片C之重複外觀圖案之一部分或全部之部位而拍攝到之圖像,係指將每一器件晶片C之檢查對象部位分割而拍攝到之圖像、或拍攝到包含1個或複數個器件晶片C之檢查對象部 位之寬廣之範圍(攝像區域F)之圖像。 The imaging unit 3 captures an image Ps including the inspection target part. Here, the image Ps including the inspection target part refers to an image captured by capturing a part or all of the repeated appearance pattern of the device chip C that is the inspection target, an image captured by dividing the inspection target part of each device chip C, or an image captured by capturing a wide range (imaging area F) including the inspection target part of one or more device chips C.
具體而言,因器件晶片C之排列(個數或節距等)及所要求之檢查精度等就每一檢查類型不同,而以攝像部3拍攝之範圍(即攝像區域)之尺寸及位置、間隔等與各個檢查類型相適應地登錄。 Specifically, since the arrangement of the device wafer C (number or pitch, etc.) and the required inspection accuracy are different for each inspection type, the size, position, and interval of the range (i.e., the imaging area) photographed by the imaging unit 3 are registered in accordance with each inspection type.
更具體而言,攝像部3具備:鏡筒30、照明部31、半反射鏡32、複數個物鏡33a、33b、旋轉器機構34、及攝像相機35等。 More specifically, the imaging unit 3 includes: a barrel 30, an illumination unit 31, a semi-reflective mirror 32, a plurality of objective lenses 33a, 33b, a rotator mechanism 34, and an imaging camera 35, etc.
鏡筒30以特定之姿勢將照明部31、半反射鏡32、物鏡33a、33b、旋轉器機構34、攝像相機35等固定,對照明光及觀察光予以導光。鏡筒30經由連結金屬件等(未圖示)安裝於裝置框架1f。 The lens barrel 30 fixes the illumination unit 31, the semi-reflective mirror 32, the objective lenses 33a, 33b, the rotator mechanism 34, the camera 35, etc. in a specific posture, and guides the illumination light and the observation light. The lens barrel 30 is mounted on the device frame 1f via connecting metal parts (not shown).
照明部31放出拍攝所需之照明光L1。具體而言,照明部31可例示雷射二極體或金屬鹵素燈、氙氣燈、LED照明等。 The lighting unit 31 emits the lighting light L1 required for shooting. Specifically, the lighting unit 31 can be exemplified by laser diodes or metal halogen lamps, xenon lamps, LED lighting, etc.
半反射鏡32使自照明部31放出之照明光L1反射而朝晶圓W側照射,且使自晶圓W側入射之光(反射光、散射光)L2朝攝像相機35側通過。 The semi-reflecting mirror 32 reflects the illumination light L1 emitted from the illumination unit 31 and irradiates the wafer W side, and allows the light (reflected light, scattered light) L2 incident from the wafer W side to pass toward the imaging camera 35 side.
物鏡33a、33b使工件W上之攝像區域之像以互不相同之特定之觀察倍率在攝像相機35之攝像元件36成像。 The objective lenses 33a and 33b form an image of the imaging area on the workpiece W on the imaging element 36 of the imaging camera 35 at different specific observation magnifications.
旋轉器機構34使用或切換物鏡33a、33b之任一者。具體而言,旋轉器機構34基於手動或來自外部之信號控制,按每特定之角度旋轉及靜止。 The rotator mechanism 34 uses or switches one of the objective lenses 33a and 33b. Specifically, the rotator mechanism 34 rotates and stops at each specific angle based on manual or external signal control.
攝像相機35拍攝工件W上之攝像區域F,取得在攝像元件36成像之圖像。取得之圖像Ps作為映像信號及映像資料被輸出至外部,由圖像處理部7予以處理而產生檢查圖像Pk。 The camera 35 captures the imaging area F on the workpiece W and obtains the image formed on the imaging element 36. The obtained image Ps is output to the outside as an image signal and image data, and is processed by the image processing unit 7 to generate an inspection image Pk.
相對移動部4使晶圓保持部2與攝像部3相對移動。具體而言,相對移動部4具備X軸滑件41、Y軸滑件42、及旋轉機構43而構成。 The relative moving part 4 makes the wafer holding part 2 and the imaging part 3 move relative to each other. Specifically, the relative moving part 4 is composed of an X-axis slide 41, a Y-axis slide 42, and a rotating mechanism 43.
X軸滑件41安裝於裝置框架1f上,使Y軸滑件42在X方向以任意之速度移動,且在任意之位置靜止。具體而言,X軸滑件係由在X方向延伸之一對軌道、在該軌道上移動之滑件部、及使滑件部移動及靜止之滑件驅動部構成。滑件驅動部可包含:藉由來自控制部CN之信號控制而旋轉、靜止之伺服馬達或脈衝馬達與滾珠螺桿機構組合而成者,或線性馬達機構等。又,X軸滑件41中具備用於檢測滑件部之當前位置及移動量之編碼器。此外,該編碼器可例示在被稱為線性標度尺之直線狀之構件以特定節距刻出細小之凹凸者、或檢測使滾珠螺桿旋轉之馬達之旋轉角度的旋轉編碼器等。 The X-axis slider 41 is mounted on the device frame 1f, so that the Y-axis slider 42 moves in the X direction at an arbitrary speed and stops at an arbitrary position. Specifically, the X-axis slider is composed of a pair of rails extending in the X direction, a slider portion moving on the rails, and a slider drive portion that moves and stops the slider portion. The slider drive portion may include: a servo motor or a pulse motor and a ball screw mechanism that rotates and stops under the control of a signal from the control unit CN, or a linear motor mechanism. In addition, the X-axis slider 41 is equipped with an encoder for detecting the current position and movement amount of the slider portion. In addition, the encoder can be exemplified by a linear scale that has fine depressions and projections engraved at a specific pitch on a straight-line component called a linear scale, or a rotary encoder that detects the rotation angle of a motor that rotates a ball screw.
Y軸滑件42基於自控制部CN輸出之控制信號,使旋轉機構43在Y方向以任意之速度移動,且在任意之位置靜止。具體而言,Y軸滑件係由在Y方向延伸之一對軌道、在該軌道上移動之滑件部、及使滑件部移動及靜止之滑件驅動部構成。滑件驅動部可包含:藉由來自控制部CN之信號控制而旋轉、靜止之伺服馬達或脈衝馬達與滾珠螺桿機構組合而成者,或線 性馬達機構等。又,在Y軸滑件42具備用於檢測滑件部之當前位置及移動量之編碼器。此外,該編碼器可例示在被稱為線性標度尺之直線狀之構件以特定節距刻出細小之凹凸者、或檢測使滾珠螺桿旋轉之馬達之旋轉角度之旋轉編碼器等。 The Y-axis slider 42 moves the rotating mechanism 43 in the Y direction at an arbitrary speed and stops at an arbitrary position based on the control signal output from the control unit CN. Specifically, the Y-axis slider is composed of a pair of rails extending in the Y direction, a slider portion moving on the rails, and a slider drive portion that moves and stops the slider portion. The slider drive portion may include: a servo motor or a pulse motor and a ball screw mechanism that rotate and stop under the control of the signal from the control unit CN, or a linear motor mechanism. In addition, the Y-axis slider 42 is equipped with an encoder for detecting the current position and movement amount of the slider portion. In addition, the encoder can be exemplified by a linear scale that has fine depressions and projections engraved at a specific pitch on a straight-line component called a linear scale, or a rotary encoder that detects the rotation angle of a motor that rotates a ball screw, etc.
旋轉機構43使載置台20在θ方向以任意之速度旋轉,且以任意之角度靜止。具體而言,旋轉機構43可例示藉由來自直驅馬達等之外部機器之信號控制而以任意之角度旋轉/靜止者。在旋轉機構43之旋轉之側之構件之上,安裝晶圓保持部2之載置台20。 The rotating mechanism 43 makes the mounting table 20 rotate at an arbitrary speed in the θ direction and stop at an arbitrary angle. Specifically, the rotating mechanism 43 can be exemplified as a device that rotates/stops at an arbitrary angle by signal control from an external device such as a direct drive motor. The mounting table 20 of the wafer holding unit 2 is mounted on the component on the rotating side of the rotating mechanism 43.
相對移動部4因具有此種構成,而可在保持著成為檢查對象之晶圓W之狀態下,使晶圓W相對於攝像部3在XYθ方向分別獨立地或複合地以特定之速度或角度相對移動,或在任意之位置、角度靜止。 Due to such a structure, the relative moving part 4 can keep the wafer W to be inspected and move the wafer W relative to the imaging part 3 in the XYθ direction independently or in combination at a specific speed or angle, or stop at any position or angle.
圖2係顯示將本發明具現化之形態之一例之拍攝情形的概念圖。在圖2中顯示一面使攝像部3之攝像相機35相對於晶圓W在箭頭Vs所示之方向相對移動,逐次變更在晶圓W上分開配置之複數個器件晶片C(2,2)~C(5,2)之攝像場所,而一面拍攝檢查對象部位之情形。此外並圖示在當前時刻,以攝像相機35拍攝包含器件晶片C(4,2)之檢查對象部位之攝像區域F之情形。 FIG. 2 is a conceptual diagram showing an example of a photographing situation of a form in which the present invention is embodied. FIG. 2 shows a situation in which the camera 35 of the photographing unit 3 is moved relative to the wafer W in the direction indicated by the arrow Vs, and the photographing location of the plurality of device chips C(2,2) to C(5,2) separately arranged on the wafer W is changed successively, while photographing the inspection target part. In addition, the image is also shown in which the camera 35 photographs the inspection target part F including the device chip C(4,2) at the current moment.
圖3係顯示將本發明具現化之形態之一例之器件晶片C各者之位置關係的俯視圖。在圖3中顯示形成於某一檢查類型之晶圓W上之器件晶片C 之重複外觀圖案之配置影像,且例示配置有形成於晶圓W之檢查區域Ri內之完整晶片Cn、及跨檢查區域Ri及非檢查區域Rn而形成之不完整晶片Cb之情形。 FIG3 is a top view showing the positional relationship of each device chip C in an example of a form that embodies the present invention. FIG3 shows a configuration image of a repeated appearance pattern of a device chip C formed on a wafer W of a certain inspection type, and illustrates a configuration of a complete chip Cn formed in an inspection area Ri of the wafer W, and an incomplete chip Cb formed across the inspection area Ri and the non-inspection area Rn.
晶片布局登錄部5登錄晶片布局,該晶片布局係規定相對於晶圓W之基準姿勢及基準位置的該晶圓之檢查區域Ri及非檢查區域Rn之位置資訊、以及器件晶片C之配置資訊。 The chip layout registration unit 5 registers the chip layout, which specifies the position information of the inspection area Ri and the non-inspection area Rn of the wafer relative to the reference posture and reference position of the wafer W, as well as the configuration information of the device chip C.
此外,於晶片布局中,將使晶圓W之缺口Wk朝向正下方之狀態設為基準姿勢,將該姿勢下之晶圓W之中心設為XY方向之基準位置(亦稱為原點),而規定檢查區域Ri之外緣(即與非檢查區域Rn之邊界)位於半徑幾毫米之位置(即位置資訊)、及器件晶片C之重複外觀圖案之縱橫排列及節距、偏移資訊等(即配置資訊)。 In addition, in the chip layout, the state where the notch Wk of the wafer W faces directly downward is set as the reference posture, and the center of the wafer W in this posture is set as the reference position in the XY direction (also called the origin), and the outer edge of the inspection area Ri (i.e., the boundary with the non-inspection area Rn) is specified to be located at a radius of several millimeters (i.e., position information), and the vertical and horizontal arrangement and pitch and offset information of the repeated appearance pattern of the device chip C (i.e., configuration information).
具體而言,在晶片布局登錄部5中,登錄就每一檢查類型所規定晶片布局之資料。 Specifically, in the chip layout registration unit 5, the data of the chip layout specified for each inspection type is registered.
基準圖像登錄部6登錄基準圖像Pf。 The reference image registration unit 6 registers the reference image Pf.
此外,基準圖像Pf係表示形成於晶圓W上之器件晶片C之重複外觀圖案為正常狀態之基準。具體而言,基準圖像Pf係用於與檢查圖像Pk進行比較,而針對各像素或像素群進行下述判定之基準者,即:若亮度值之差分或方差值等在預設之範圍內則判定為正常,若在該範圍外則判定 為異常。更具體而言,基準圖像Pf可例示:代表預先選定之良品圖像之1個圖像、或預先選定複數個良品圖像並將其等平均化之圖像、基於良品學習法而產生之圖像等。 In addition, the reference image Pf is a reference indicating that the repeated appearance pattern of the device chip C formed on the wafer W is in a normal state. Specifically, the reference image Pf is used to compare with the inspection image Pk, and is a reference for making the following judgments for each pixel or pixel group, that is, if the difference or variance value of the brightness value is within a preset range, it is judged as normal, and if it is outside the range, it is judged as abnormal. More specifically, the reference image Pf can be exemplified as: an image representing a pre-selected good image, or an image of a plurality of pre-selected good images and averaging them, an image generated based on a good learning method, etc.
具體而言,在基準圖像登錄部6中,就每一檢查類型登錄有基準圖像Pf之資料。 Specifically, in the reference image registration unit 6, data of the reference image Pf is registered for each inspection type.
圖4係顯示將本發明具現化之形態之一例之圖像Ps、基準圖像Pf、檢查圖像Pk、檢查圖像Pk與基準圖像Pf之差分之影像的圖像圖。 FIG. 4 is an image diagram showing an example of a form in which the present invention is embodied, including an image Ps, a reference image Pf, a test image Pk, and an image of a difference between the test image Pk and the reference image Pf.
在圖4(a)中例示拍攝到不完整晶片Cb之圖像Ps之影像,在該圖像Ps中包含電路圖案及檢測對象之缺陷X。 FIG4(a) shows an example of an image Ps of an incomplete chip Cb. The image Ps includes a circuit pattern and a defect X to be detected.
在圖4(b)中例示基準圖像Pf之影像。 Figure 4(b) shows an example of the image of the reference image Pf.
在圖4(c)中例示檢查圖像Pk之影像。 Figure 4(c) shows an example of the inspection image Pk.
在圖4(d)中例示檢查圖像Pk與基準圖像Pf之差分之影像。 Figure 4(d) shows an example of the difference between the inspection image Pk and the reference image Pf.
此外,各圖像Ps、Pf、Pk顯示由縱橫7×7之矩陣狀之像素構成之例。又,作為缺陷X,例示在電路圖案上附著異物者。 In addition, each image Ps, Pf, and Pk shows an example of being composed of pixels in a 7×7 matrix in both vertical and horizontal directions. In addition, as a defect X, a foreign object attached to the circuit pattern is shown as an example.
圖5係顯示將本發明具現化之形態之一例之圖像Ps、基準圖像Pf、檢查圖像Pk之各像素之亮度值、以及檢查圖像Pk與基準圖像Pf之亮度值之差分之影像的圖像圖。此外,圖4(a)~(d)之影像與圖5(a)~(d)所示之各像素之亮度值之位置關係分別對應。 FIG5 is an image diagram showing an example of a form in which the present invention is embodied, including the brightness values of each pixel of the image Ps, the reference image Pf, the inspection image Pk, and the difference between the brightness values of the inspection image Pk and the reference image Pf. In addition, the positional relationship between the images of FIG4(a) to (d) and the brightness values of each pixel shown in FIG5(a) to (d) respectively corresponds.
在圖5(a)中例示拍攝到不完整晶片Cb之圖像Ps(包含電路圖案及檢測對象之缺陷X)之各像素之亮度值之影像。 FIG5(a) shows an example of the brightness value of each pixel of an image Ps (including the circuit pattern and the defect X of the detection object) of an incomplete chip Cb.
在圖5(b)中例示基準圖像Pf之各像素之亮度值之影像。 Figure 5(b) shows an example of the brightness value of each pixel of the reference image Pf.
在圖5(c)中例示檢查圖像Pk之各像素之亮度值之影像。 Figure 5(c) shows an example of the brightness value of each pixel of the inspection image Pk.
在圖5(d)中例示檢查圖像Pk與基準圖像Pf之亮度值之差分之影像。 Figure 5(d) shows an example of the difference in brightness between the inspection image Pk and the reference image Pf.
圖像處理部7對由攝像部3拍攝到之圖像Ps進行處理。具體而言,圖像處理部7具備動態遮罩處理部71、及比較檢查部72等。 The image processing unit 7 processes the image Ps captured by the imaging unit 3. Specifically, the image processing unit 7 includes a dynamic mask processing unit 71 and a comparison inspection unit 72, etc.
動態遮罩處理部71對於拍攝到跨檢查區域Ri及非檢查區域Rn而形成之不完整晶片Cb之圖像Ps,將構成圖像Ps之像素中之相當於非檢查區域Rn之像素(以虛線Y表示之部位)之亮度值,基於拍攝到圖像Ps之晶圓W上之位置資訊及晶片布局,置換處理為基準圖像Pf之亮度值,並產生檢查圖像Pk。 The dynamic mask processing unit 71 replaces the brightness value of the pixel (the part indicated by the dotted line Y) corresponding to the non-inspection area Rn in the pixel constituting the image Ps of the incomplete chip Cb formed by the inspection area Ri and the non-inspection area Rn with the brightness value of the reference image Pf based on the position information and chip layout on the wafer W where the image Ps is captured, and generates the inspection image Pk.
具體而言,取得拍攝到圖像Ps時之晶圓W與攝像部3之相對位置,將該位置資訊與晶片布局對照,判別拍攝到之圖像Ps內之哪一像素為位於檢查區域Ri之像素、或位於非檢查區域Rn之像素。而且,針對位於非檢查區域Rn之像素(以虛線Y表示之部位),置換處理為基準圖像Pf之對應之像素之亮度值,並產生檢查圖像Pk。此時,圖像Ps內之未覆蓋非檢查區域Rn之像素(亦稱為檢查對象像素)之亮度值被交接至檢查圖像Pk。即,若在該檢查對象像素存在缺陷X,則在檢查圖像Pk中反映拍攝到缺陷X之亮度值。 Specifically, the relative position of the wafer W and the imaging unit 3 when the image Ps is captured is obtained, and the position information is compared with the chip layout to determine which pixel in the captured image Ps is located in the inspection area Ri or the non-inspection area Rn. In addition, for the pixels located in the non-inspection area Rn (the part indicated by the dotted line Y), the brightness value of the corresponding pixel of the reference image Pf is replaced and the inspection image Pk is generated. At this time, the brightness value of the pixels in the image Ps that do not cover the non-inspection area Rn (also called the inspection object pixel) is transferred to the inspection image Pk. That is, if there is a defect X in the inspection object pixel, the brightness value of the defect X captured is reflected in the inspection image Pk.
比較檢查部72將由動態遮罩處理部71產生之檢查圖像Pk與基準圖像 Pf進行比較,而對於檢查對象部位進行檢查。具體而言,比較檢查部72將包含器件晶片C之重複外觀圖案之檢查對象部位之檢查圖像Pk與基準圖像Pf之對應之像素彼此進行比較,針對各像素及像素群,若亮度值之差分或方差值等在預設之範圍內則判定為正常,若在該範圍外則判定為異常。 The comparison inspection unit 72 compares the inspection image Pk generated by the dynamic mask processing unit 71 with the reference image Pf, and inspects the inspection target portion. Specifically, the comparison inspection unit 72 compares the inspection image Pk of the inspection target portion including the repeated appearance pattern of the device chip C with the corresponding pixels of the reference image Pf. For each pixel and pixel group, if the difference or variance value of the brightness value is within a preset range, it is judged as normal, and if it is outside the range, it is judged as abnormal.
因而,在比較檢查部72中將檢查圖像Pk與基準圖像Pf進行比較處理,藉由提取亮度值之差分位於基準範圍外之部位,而可檢測缺陷X。 Therefore, the inspection image Pk is compared with the reference image Pf in the comparison inspection unit 72, and the defect X can be detected by extracting the portion where the difference in brightness value is outside the reference range.
此外,除上文以外,還根據需要,圖像處理部7具備下述功能,即:將分割圖像接合,或自包含邊際之整體圖像之中提取(亦稱為校正)檢查所需之部位,或進行各像素之亮度值之修正,或是進行圖像Ps之彎曲修正等,抑或進行運算處理等。 In addition to the above, the image processing unit 7 also has the following functions as needed, namely: joining the segmented images, or extracting (also called correction) the required inspection area from the whole image including the edge, or correcting the brightness value of each pixel, or correcting the curvature of the image Ps, or performing calculation processing, etc.
本發明之基準圖像登錄部6、晶片布局登錄部5、圖像處理部7係由具備圖像處理功能之電腦CP(即硬體)、及其執行程式等(即軟體)構成。更具體而言,晶片布局登錄部5及基準圖像登錄部6係由電腦CP之記憶部(暫存器、記憶體等)或記錄媒體(HDD、SSD等)等之一部分構成,圖像處理部7係由電腦CP之圖像處理部(所謂之GPU)構成。 The reference image registering unit 6, chip layout registering unit 5, and image processing unit 7 of the present invention are composed of a computer CP (i.e., hardware) having an image processing function, and its execution program (i.e., software). More specifically, the chip layout registering unit 5 and the reference image registering unit 6 are composed of a portion of the memory unit (register, memory, etc.) or recording medium (HDD, SSD, etc.) of the computer CP, and the image processing unit 7 is composed of the image processing unit (so-called GPU) of the computer CP.
電腦CP例如擔負如以下之功能及作用: Computer CPs, for example, have the following functions and roles:
‧登錄每一檢查類型之攝像倍率及攝像位置、攝像路徑T、攝像間隔(節距、時間間隔)、給送速度等之資訊(所謂之檢查步序) ‧Record the information of each inspection type, such as the imaging magnification and imaging position, imaging path T, imaging interval (pitch, time interval), feeding speed, etc. (the so-called inspection sequence)
‧登錄每一檢查類型之檢查條件(檢查對象部位之亮度值及方差值等 之正常範圍等) ‧Record the inspection conditions for each inspection type (normal range of brightness value and variance value of the inspection object, etc.)
‧與使用者介面(鍵盤、SW、監視器等)連接,進行各種資訊之輸入輸出 ‧Connect with user interface (keyboard, SW, monitor, etc.) to input and output various information
‧與控制部CN或外部之主電腦等連接,進行信號或資料之輸入輸出 ‧Connect to the control unit CN or external host computer to input and output signals or data
此外,每一檢查類型之檢查步序及檢查條件亦被稱為處方資訊、檢查處方。 In addition, the examination steps and examination conditions of each examination type are also called prescription information and examination prescription.
控制部CN例如擔負如以下之功能及作用: The control unit CN, for example, has the following functions and roles:
‧對晶圓保持部2,輸出保持/解除晶圓W之信號 ‧Output a signal to hold/release wafer W to wafer holding unit 2
‧控制旋轉器機構34,切換所使用之物鏡(攝像倍率) ‧Control the rotator mechanism 34 to switch the objective lens (photographic magnification) used
‧對照明部31輸出發光觸發 ‧Output light trigger to the lighting unit 31
‧對攝像相機35輸出攝像觸發 ‧ Output camera 35 to trigger the camera to shoot
‧相對移動部4之驅動控制:監視X軸滑件41、Y軸滑件42、旋轉機構43之當前位置,且輸出驅動用信號 ‧Drive control of relative moving part 4: monitor the current position of X-axis slider 41, Y-axis slider 42, and rotating mechanism 43, and output drive signal
‧將相對移動部4(X軸滑件41、Y軸滑件42、旋轉機構43)之當前位置資訊輸出至電腦CP ‧Output the current position information of the relative moving part 4 (X-axis slide 41, Y-axis slide 42, rotating mechanism 43) to the computer CP
‧基於檢查處方控制各部 ‧Control each department based on inspection prescription
此外,自控制部9向攝像部3輸出攝像觸發,可例示如下述之方式: In addition, the image capture trigger is output from the control unit 9 to the image capture unit 3, which can be illustrated as follows:
‧使攝像部3在X方向進行掃描移動,並且每移動特定距離便使照明光L1進行極短時間發光(所謂之頻閃發光)。 ‧The imaging unit 3 is made to scan and move in the X direction, and the illumination light L1 is made to emit light for a very short time (so-called stroboscopic light) every time it moves a certain distance.
‧或,使攝像部3移動至特定位置並使其靜止,照射照明光L1而進行攝像(所謂之步進重複式)。 ‧Or, the imaging unit 3 is moved to a specific position and then stopped, and the illumination light L1 is irradiated to perform imaging (so-called step-and-repeat method).
又,所謂攝像觸發意指對於攝像相機35及圖像處理部7之圖像擷取入指示、照明光L1之發光指示等。具體而言,作為攝像觸發,設為(情況1)在以攝像相機35可拍攝之時間(所謂之曝光時間)之期間,使照明光L1頻閃發光,或(情況2)在照射照明光L1之時間內進行攝像。或,攝像觸發並不限定於對於攝像相機35之指示,可為(情況3)對於取得圖像之圖像處理裝置之圖像擷取入指示。如此,亦可對應於自攝像相機35逐次輸出映像信號或映像資料之形態。 Furthermore, the so-called imaging trigger means an image capture instruction for the camera 35 and the image processing unit 7, an instruction for the illumination light L1 to emit light, etc. Specifically, as an imaging trigger, it is set as (case 1) to flash the illumination light L1 during the time (the so-called exposure time) that the camera 35 can shoot, or (case 2) to take an image during the time of irradiating the illumination light L1. Alternatively, the imaging trigger is not limited to an instruction for the camera 35, and can be (case 3) an image capture instruction for the image processing device that obtains the image. In this way, it can also correspond to the form of the image signal or image data that is outputted successively from the camera 35.
更具體而言,控制部CN係由電腦或可程式化邏輯控制器等(即硬體)、及其執行程式等(即軟體)構成。 More specifically, the control unit CN is composed of a computer or a programmable logic controller (i.e. hardware) and its execution program (i.e. software).
[檢查流程] [Inspection process]
圖6係將本發明具現化之形態之一例之流程圖。在圖6中,作為一系列之流程,按每一步驟顯示使用晶圓外觀檢查裝置1拍攝、檢查配置於晶圓W之器件晶片C之檢查區域Ri及非檢查區域Rn之步序。 FIG6 is a flowchart of an example of a form in which the present invention is embodied. FIG6 shows, as a series of processes, the sequence of using the wafer appearance inspection device 1 to photograph and inspect the inspection area Ri and the non-inspection area Rn of the device chip C disposed on the wafer W step by step.
在檢查前,預先登錄規定相對於晶圓W之基準姿勢及基準位置的該晶圓W之檢查區域Ri及非檢查區域Rn的晶片布局(步驟s11),且預先登錄基準圖像Pf(步驟s12)。且,設定檢查處方,決定晶圓W之檢查模式、順序(步驟s13)。 Before inspection, the chip layout of the inspection area Ri and non-inspection area Rn of the wafer W that specifies the reference posture and reference position relative to the wafer W is pre-registered (step s11), and the reference image Pf is pre-registered (step s12). In addition, the inspection prescription is set to determine the inspection mode and sequence of the wafer W (step s13).
其次,將晶圓W載置於晶圓外觀檢查裝置1之載置台20(步驟s21),向 形成於晶圓W上之基準遮罩(未圖示)之讀取位置移動,進行對準(步驟s22)。 Next, the wafer W is placed on the mounting table 20 of the wafer appearance inspection device 1 (step s21), and moved to the reading position of the reference mask (not shown) formed on the wafer W for alignment (step s22).
一面使晶圓W與攝像機構3相對移動,一面拍攝包含檢查對象部位之圖像Ps(步驟s23),且對拍攝到之圖像Ps進行以下之處理。 While the wafer W and the imaging mechanism 3 are moved relative to each other, an image Ps including the inspection object is captured (step s23), and the captured image Ps is processed as follows.
首先,對於拍攝到跨檢查區域Ri及非檢查區域Rn而形成之不完整晶片Cb之圖像Ps,基於該圖像Ps被拍攝到之晶圓W上之位置資訊及晶片布局,將構成該圖像Ps之像素中相當於非檢查區域Rn之像素之亮度值置換處理為基準圖像Pf之亮度值,而產生檢查圖像Pk(步驟s31)。 First, for the image Ps of the incomplete chip Cb formed by crossing the inspection area Ri and the non-inspection area Rn, based on the position information on the wafer W where the image Ps was captured and the chip layout, the brightness values of the pixels constituting the image Ps corresponding to the non-inspection area Rn are replaced with the brightness values of the reference image Pf, thereby generating the inspection image Pk (step s31).
而後,將檢查圖像Pk與基準圖像Pf進行比較,對檢查對象部位進行檢查(步驟s32)。具體而言,將檢查圖像Pk與基準圖像Pf之對應之像素彼此進行比較,針對各像素或像素群進行判定,若亮度值之差分或方差值等在預設之範圍內則判定為正常,若在該範圍外則判定為異常。而且,藉由提取亮度值之差分位於基準範圍外之部位,而檢測缺陷X。 Then, the inspection image Pk is compared with the reference image Pf, and the inspection object is inspected (step s32). Specifically, the corresponding pixels of the inspection image Pk and the reference image Pf are compared with each other, and a judgment is made for each pixel or pixel group. If the difference or variance value of the brightness value is within the preset range, it is judged as normal, and if it is outside the range, it is judged as abnormal. In addition, the defect X is detected by extracting the part where the difference of the brightness value is outside the reference range.
而後,對於預先規定之全部檢查對象部位,判定攝像、檢查是否結束(步驟s41),若未結束,則繼續進行攝像、檢查。另一方面,若攝像、檢查結束,則朝裝置外送出晶圓W(步驟s42)。 Then, for all the pre-specified inspection target parts, it is determined whether the imaging and inspection are completed (step s41). If not, the imaging and inspection are continued. On the other hand, if the imaging and inspection are completed, the wafer W is sent out of the device (step s42).
而後,判定是否有下一晶圓W(步驟s43),若有下一個要檢查之晶圓W,則重複上述之步驟s21~s43。另一方面,若無下一晶圓W,則結束一 系列之流程。 Then, determine whether there is a next wafer W (step s43). If there is a next wafer W to be inspected, repeat the above steps s21~s43. On the other hand, if there is no next wafer W, then end a series of processes.
根據本發明之晶圓外觀檢查裝置1及檢查方法,即便在晶圓上W存在跨檢查區域Ri及非檢查區域Rn而形成之不完整晶片Cb,亦可根據拍攝位置進行動態的遮罩處理,產生檢查圖像Pk,且將檢查圖像Pk與基準圖像Pf進行比較,而進行期望之檢查。此時,即便為不完整晶片Cb,但只要為晶圓W之檢查區域Ri,則進行以完整晶片Cn為準之檢查,可對於晶圓W之檢查區域Ri整體獲得所期望之檢查結果。又,無須對於疑似缺陷進行特別之處理。即,無論是完整晶片Cn還是不完整晶片Cb,均可對於晶圓W之檢查區域Ri整體獲得所期望之檢查結果,亦可防止處理時間增加。 According to the wafer appearance inspection device 1 and inspection method of the present invention, even if there is an incomplete chip Cb formed by crossing the inspection area Ri and the non-inspection area Rn on the wafer W, dynamic mask processing can be performed according to the shooting position to generate an inspection image Pk, and the inspection image Pk is compared with the reference image Pf to perform the desired inspection. At this time, even if it is an incomplete chip Cb, as long as it is the inspection area Ri of the wafer W, the inspection is based on the complete chip Cn, and the inspection area Ri of the wafer W can obtain the desired inspection result as a whole. In addition, there is no need to perform special processing on suspected defects. That is, whether it is a complete chip Cn or an incomplete chip Cb, the inspection area Ri of the wafer W can obtain the desired inspection result as a whole, and the processing time can be prevented from increasing.
[變化例] [Example of changes]
此外,在上文中,作為檢查之具體例,顯示檢測在電路圖案上附著異物之缺陷X之構成、步序。然而,在將本發明具現化上,檢查對象不僅為異物之附著,還決定是否無短路或斷線等、或是否未附帶瑕疵等適宜項目,只要決定拍攝條件或檢查條件等即可。 In addition, in the above text, as a specific example of inspection, the structure and steps of detecting the defect X of foreign matter attached to the circuit pattern are shown. However, in the embodiment of the present invention, the inspection object is not only the attachment of foreign matter, but also determines whether there is a short circuit or a broken line, or whether there are no defects, etc., and it is sufficient to determine the shooting conditions or inspection conditions, etc.
此外,在上文中,作為將本發明具現化之步序,顯示圖6,且例示以晶片布局之登錄(步驟s11)、基準圖像Pf之登錄(步驟s12)、檢查處方之設定(步驟s13)之順序執行登錄、設定之步序,但可以其以外之順序執行。例如,可先於晶片布局之登錄,進行基準圖像Pf之登錄,亦可先於檢查處方之設定而進行。 In addition, in the above text, FIG. 6 is shown as a step sequence for realizing the present invention, and the registration and setting steps are performed in the order of chip layout registration (step s11), reference image Pf registration (step s12), and inspection prescription setting (step s13), but it can be performed in a sequence other than this. For example, the reference image Pf can be registered before the chip layout is registered, and it can also be performed before the inspection prescription setting.
此外,在上文中顯示攝像部3之攝像相機35之拍攝範圍設定為包含1 個器件晶片C之檢查對象部位之攝像區域F之例。然而,攝像相機35之拍攝範圍可將每一器件晶片C之檢查對象部位分割,亦可設定為包含複數個器件晶片C之檢查對象部位之寬廣之範圍。 In addition, the above text shows an example in which the shooting range of the camera 35 of the imaging unit 3 is set to include the imaging area F of the inspection target part of one device chip C. However, the shooting range of the camera 35 can be divided into the inspection target part of each device chip C, and can also be set to a wide range including the inspection target parts of multiple device chips C.
1:晶圓外觀檢查裝置 1: Wafer appearance inspection device
1f:裝置框架 1f: Device frame
2:晶圓保持部 2: Wafer holding part
3:攝像部 3: Camera Department
4:相對移動部 4: Relative moving part
5:晶片布局登錄部 5: Chip layout registration department
6:基準圖像登錄部 6: Standard image registration department
7:圖像處理部 7: Image processing department
20:載置台 20: Loading platform
30:鏡筒 30: Lens barrel
31:照明部 31: Lighting Department
32:半反射鏡 32: Half-reflective mirror
33a,33b:物鏡 33a,33b:Objective lens
34:旋轉器機構 34: Rotator mechanism
35:攝像相機 35: Camera
36:攝像元件 36: Imaging components
41:X軸滑件 41: X-axis slide
42:Y軸滑件 42: Y-axis slide
43:旋轉機構 43: Rotating mechanism
71:動態遮罩處理部 71: Dynamic mask processing unit
72:比較檢查部 72: Comparative Inspection Department
C:器件晶片 C: Device chip
CN:控制部 CN: Control Department
CP:電腦 CP: Computer
F:攝像區域(視野) F: Photography area (field of view)
L1:照明光 L1: lighting light
L2:自晶圓側入射之光(反射光、散射光) L2: Light incident from the wafer side (reflected light, scattered light)
Pf:基準圖像 Pf: Baseline image
Pk:檢查圖像(處理後) Pk: Check image (after processing)
Ps:圖像 Ps:Image
W:晶圓/工件 W: Wafer/workpiece
θ:方向 θ: direction
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244197A (en) * | 2007-03-28 | 2008-10-09 | Hitachi High-Technologies Corp | Inspection device and method |
JP2009097958A (en) * | 2007-10-16 | 2009-05-07 | Tokyo Seimitsu Co Ltd | Apparatus and method for defect detection |
TW201024712A (en) * | 2008-12-23 | 2010-07-01 | Hermes Microvision Inc | Method and system of classifying defects on a wafer |
TW201915792A (en) * | 2017-10-05 | 2019-04-16 | 敖翔科技股份有限公司 | Smart defect calibration system and the method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02290036A (en) | 1989-02-13 | 1990-11-29 | Tokyo Electron Ltd | Inspection of semiconductor wafer |
JP2939665B2 (en) | 1991-03-04 | 1999-08-25 | 東京エレクトロン株式会社 | Semiconductor wafer measurement method |
JP2000346627A (en) | 1999-06-07 | 2000-12-15 | Toray Eng Co Ltd | Inspection system |
JP2007155610A (en) | 2005-12-07 | 2007-06-21 | Seiko Epson Corp | Visual examination device and visual examination method |
JP2007163259A (en) * | 2005-12-13 | 2007-06-28 | Dainippon Screen Mfg Co Ltd | Difference comparison inspection method and difference comparison inspection device |
JP5275017B2 (en) | 2008-12-25 | 2013-08-28 | 株式会社日立ハイテクノロジーズ | Defect inspection method and apparatus |
JP2009283977A (en) * | 2009-08-21 | 2009-12-03 | Hitachi High-Technologies Corp | Inspection device and method |
JP5536233B2 (en) * | 2010-01-21 | 2014-07-02 | ヒューレット−パッカード・インデイゴ・ビー・ブイ | Automatic inspection of printed images |
CN108280828B (en) * | 2018-01-25 | 2020-11-10 | 上海闻泰电子科技有限公司 | Camera assembly position detection method and device |
-
2019
- 2019-08-23 JP JP2019152538A patent/JP7293046B2/en active Active
-
2020
- 2020-06-09 CN CN202080057392.9A patent/CN114222913B/en active Active
- 2020-06-09 KR KR1020227004449A patent/KR20220044742A/en unknown
- 2020-06-09 WO PCT/JP2020/022717 patent/WO2021039019A1/en active Application Filing
- 2020-07-14 TW TW109123703A patent/TWI845721B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244197A (en) * | 2007-03-28 | 2008-10-09 | Hitachi High-Technologies Corp | Inspection device and method |
JP2009097958A (en) * | 2007-10-16 | 2009-05-07 | Tokyo Seimitsu Co Ltd | Apparatus and method for defect detection |
TW201024712A (en) * | 2008-12-23 | 2010-07-01 | Hermes Microvision Inc | Method and system of classifying defects on a wafer |
TW201915792A (en) * | 2017-10-05 | 2019-04-16 | 敖翔科技股份有限公司 | Smart defect calibration system and the method thereof |
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TW202109022A (en) | 2021-03-01 |
JP7293046B2 (en) | 2023-06-19 |
WO2021039019A1 (en) | 2021-03-04 |
JP2021032672A (en) | 2021-03-01 |
CN114222913B (en) | 2024-05-24 |
CN114222913A (en) | 2022-03-22 |
KR20220044742A (en) | 2022-04-11 |
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