TWI815913B - Cut wafer inspection device - Google Patents
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- 238000007689 inspection Methods 0.000 title claims abstract description 118
- 235000012431 wafers Nutrition 0.000 claims abstract description 122
- 238000003384 imaging method Methods 0.000 claims abstract description 58
- 230000002093 peripheral effect Effects 0.000 claims abstract description 42
- 230000007547 defect Effects 0.000 abstract description 8
- 230000007246 mechanism Effects 0.000 description 19
- 238000005286 illumination Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 208000035346 Margins of Excision Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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- 238000005336 cracking Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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Abstract
本發明確實地檢測出隱藏於經切晶之晶圓之切晶線中之裂縫或碎屑等缺陷,且縮短元件晶片之檢查時間。 本發明係一種檢查配置於切晶晶圓之元件晶片之元件區域及周邊區域之裝置, 其具備晶圓保持部、攝像部、相對移動部、檢查配方登錄部、控制部, 控制部具備: 周邊區域檢查模式,其以特定之拍攝倍率以包括經切晶之晶圓之切晶線之方式一面沿著該切晶線一面進行拍攝,而檢查元件晶片之周邊區域;及 元件區域檢查模式,其以較周邊區域檢查模式中之拍攝倍率低之拍攝倍率以跳過切晶線之方式進行拍攝,而檢查元件區域;且 於檢查配方登錄部,登錄有用於執行元件區域檢查模式及周邊區域檢查模式中之至少一者之檢查配方。The present invention reliably detects defects such as cracks or chips hidden in the cutting lines of cut wafers, and shortens the inspection time of component wafers. The present invention is a device for inspecting the component area and peripheral area of a component wafer arranged on a diced wafer. It has a wafer holding part, an imaging part, a relative movement part, an inspection recipe registration part, and a control part. The control department has: Peripheral area inspection mode, which uses a specific imaging magnification to photograph the dicing line of the diced wafer along the dicing line, and inspects the peripheral area of the component wafer; and Component area inspection mode, which uses a lower shooting magnification than the shooting magnification in the peripheral area inspection mode to skip the wafer line and inspect the component area; and In the inspection recipe registration section, an inspection recipe for at least one of the execution component area inspection mode and the peripheral area inspection mode is registered.
Description
本發明係關於一種檢查配置於形成有劃線或經切晶之晶圓之元件晶片的元件區域及周邊區域之切晶晶片檢查裝置。The present invention relates to a diced wafer inspection device for inspecting a device area and a peripheral area of a device wafer on which a scribed or cut wafer is formed.
作為對形成有半導體裝置或電子零件之晶圓等工件實施切斷或開槽(刻劃)加工之裝置,已知有切晶裝置(例如專利文獻1、2)。As an apparatus for cutting or grooving (scoring) a workpiece such as a wafer on which a semiconductor device or electronic component is formed, a die cutting apparatus is known (for example, Patent Documents 1 and 2).
又,提出一種技術,其藉由於切晶加工中對工件進行拍攝而偵測加工尺寸或加工狀態等之異常,從而進行對應異常狀態之處理(例如專利文獻2)。Furthermore, a technology has been proposed that detects abnormalities in processing dimensions or processing status by photographing a workpiece during wafer cutting processing, and performs processing corresponding to the abnormal status (for example, Patent Document 2).
又,提出一種技術,其對配置於形成有劃線或經切晶之晶圓之元件晶片逐一進行拍攝,檢查該元件晶片之有效區域(即元件區域)及邊緣(即周邊區域)(即利用檢查裝置進行之檢查)(例如專利文獻3)。 [先前技術文獻] [專利文獻]Furthermore, a technique is proposed, which involves photographing component wafers arranged on a wafer with scribed or cut wafers one by one, and inspecting the effective area (i.e., component area) and edge (i.e., peripheral area) of the component wafer (i.e., using inspection by an inspection device) (for example, Patent Document 3). [Prior technical literature] [Patent Document]
[專利文獻1]日本專利特開昭62-53804號公報 [專利文獻2]日本專利特開2009-253017號公報 [專利文獻3]日本專利特開2017-161236號公報[Patent Document 1] Japanese Patent Application Publication No. Sho 62-53804 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-253017 [Patent Document 3] Japanese Patent Application Laid-Open No. 2017-161236
[發明所欲解決之問題][Problem to be solved by the invention]
於如專利文獻2所揭示之技術中,若想要檢測出微細之裂縫(皸裂)等,則需要使拍攝倍率變為高倍率,且將晶圓之移動速度(即切斷速度)抑制為不影響檢查品質之程度。In the technology disclosed in Patent Document 2, if you want to detect fine cracks (cracking), etc., you need to change the imaging magnification to a high magnification and suppress the moving speed of the wafer (that is, the cutting speed) to an unreasonable level. The degree to which it affects the quality of inspection.
另一方面,存在想要儘可能提高每單位時間之晶圓處理片數(所謂WPH)之需求,切晶中之檢查停留在測量加工槽(切口)之位置或切口寬度、較大碎屑(缺損)之有無等,微細之裂縫等之檢測委託於專用機(即檢查裝置)。On the other hand, there is a need to increase the number of wafers processed per unit time (so-called WPH) as much as possible. The inspection during wafer cutting is limited to measuring the position of the processing groove (notch) or the width of the notch, and large chips ( Defects), micro cracks, etc. are entrusted to a dedicated machine (i.e. inspection device).
但,於檢查裝置之檢查中,存在想要於特定時間內以特定精度檢查元件晶片之元件區域、及形成有切晶線(包括劃線,以下相同)之晶片端部(即周邊區域)雙方之需求,若以相同之高倍率檢查所有分割區域,則造成1片晶圓所花費之檢查時間變長。另一方面,若企圖縮短檢查時間而以相同之低倍率檢查所有分割區域,則存在無法確實地檢測出隱藏於切晶線之微細之裂縫等缺陷之規律。因此,尋求可於特定時間內以特定精度檢查元件區域及周邊區域雙方之檢查裝置。However, in the inspection of the inspection device, there are both the device area where the device wafer is to be inspected with specific accuracy within a specific time, and the end portion of the wafer (that is, the peripheral area) where dicing lines (including scribe lines, the same applies below) are formed. If all divided areas are inspected at the same high magnification, the inspection time for one wafer will become longer. On the other hand, if you try to shorten the inspection time and inspect all divided areas at the same low magnification, there is a rule that defects such as fine cracks hidden in the wafer lines cannot be reliably detected. Therefore, an inspection device that can inspect both the component area and the surrounding area with specific accuracy within a specific time is required.
因此,本發明係鑒於上述問題點而完成者,目的在於提供一種切晶晶片檢查裝置,其可確實地檢測出隱藏於形成有劃線或經切晶之晶圓之切晶線的裂縫或碎屑、膜剝落等缺陷,且縮短檢查元件晶片之元件區域之時間。 [解決問題之技術手段]Therefore, the present invention was completed in view of the above-mentioned problems, and an object thereof is to provide a diced wafer inspection device that can reliably detect cracks or chips hidden in dicing lines on diced or diced wafers. Defects such as chips and film peeling can be eliminated, and the time to inspect the component area of the component chip can be shortened. [Technical means to solve problems]
為了解決以上之問題,本發明之一態樣係一種切晶晶片檢查裝置, 其係檢查配置於經切晶之晶圓之元件晶片之元件區域及周邊區域者,其特徵在於具備: 晶圓保持部,其保持晶圓; 攝像部,其以特定之拍攝倍率對設定於晶圓之特定區域進行拍攝; 相對移動部,其使晶圓與攝像部相對移動; 檢查配方登錄部,其將相對移動部中之相對移動之方向及速度、以及攝像部中之拍攝倍率及拍攝位置作為檢查配方進行登錄;及 控制部,其基於檢查配方控制攝像部及相對移動部;且 控制部具備: 周邊區域檢查模式,其以特定之拍攝倍率以包括經切晶之晶圓之切晶線之方式一面沿著該切晶線一面進行拍攝,而檢查元件晶片之周邊區域;及 元件區域檢查模式,其以較周邊區域檢查模式中之拍攝倍率低之拍攝倍率以跳過切晶線之方式進行拍攝,而檢查元件區域;且 於檢查配方登錄部,登錄有用於執行元件區域檢查模式及周邊區域檢查模式中之至少一者之檢查配方。 [發明之效果]In order to solve the above problems, one aspect of the present invention is a cut wafer inspection device. It is used to inspect the component area and surrounding area of the component chip arranged on the cut wafer. It is characterized by: a wafer holding portion that holds the wafer; An imaging unit that photographs a specific area set on the wafer at a specific imaging magnification; a relative moving part that moves the wafer and the imaging part relatively; The inspection recipe registration part registers the direction and speed of relative movement in the relative movement part, and the shooting magnification and shooting position in the imaging part as the inspection recipe; and a control part that controls the camera part and the relative movement part based on the inspection recipe; and The control department has: Peripheral area inspection mode, which uses a specific imaging magnification to photograph the dicing line of the diced wafer along the dicing line, and inspects the peripheral area of the component wafer; and Component area inspection mode, which uses a lower shooting magnification than the shooting magnification in the peripheral area inspection mode to skip the wafer line and inspect the component area; and In the inspection recipe registration section, an inspection recipe for at least one of the execution component area inspection mode and the peripheral area inspection mode is registered. [Effects of the invention]
根據上述切晶晶片檢查裝置,於周邊區域檢查模式中,能夠以高倍率之視野尺寸對沿著切晶線之區域(周邊區域)進行拍攝,而確實地檢測出裂縫或碎屑等缺陷。另一方面,於元件區域檢查模式中,能夠以相對較低之倍率之視野尺寸對元件晶片之元件區域進行拍攝,從而縮短檢查時間。According to the above-mentioned wafer inspection device, in the peripheral area inspection mode, the area along the wafer line (peripheral area) can be imaged with a high-magnification field of view, and defects such as cracks and chips can be reliably detected. On the other hand, in the component area inspection mode, the component area of the component wafer can be photographed with a relatively low magnification field of view size, thereby shortening the inspection time.
以下,關於用於實施本發明之形態,一面使用圖一面進行說明。Hereinafter, modes for implementing the present invention will be described using the drawings.
再者,於以下之說明中,將正交座標系統之3軸設為X、Y、Z,將水平方向表現為X方向、Y方向,將與XY平面垂直之方向(即重力方向)表現為Z方向。又,Z方向將抵抗重力之方向表現為上,將重力起作用之方向表現為下。又,將以Z方向作為中心軸進行旋轉之方向設為θ方向。Furthermore, in the following explanation, the three axes of the orthogonal coordinate system are represented as X, Y, and Z, the horizontal direction is represented as the Z direction. In addition, the Z direction represents the direction of resistance to gravity as upward, and the direction of gravity as downward. Also, let the direction of rotation with the Z direction as the central axis be the θ direction.
圖1係表示實現本發明之形態之一例的整體構成之概略圖。於圖1中表示本發明之切晶晶片檢查裝置1之概略圖。FIG. 1 is a schematic diagram showing the overall structure of an example of implementing the present invention. FIG. 1 shows a schematic diagram of the cut wafer inspection device 1 of the present invention.
切晶晶片檢查裝置1係檢查配置於經切晶之晶圓W之元件晶片C之元件區域Rc及周邊區域Re者。再者,元件區域Rc係指元件晶片C之主要電路經圖案化之區域。另一方面,周邊區域Re係指配置於元件晶片C之元件區域Rc之周邊(亦稱為外側)之區域,且係用於容許切晶線DL之位置偏移而設定之區域(亦稱為餘白區域、切除裕量)。The cut wafer inspection apparatus 1 inspects the device area Rc and the peripheral area Re of the device wafer C arranged on the cut wafer W. Furthermore, the component area Rc refers to the area where the main circuit of the component chip C is patterned. On the other hand, the peripheral area Re refers to an area arranged on the periphery (also called outside) of the element area Rc of the element wafer C, and is an area set to allow the positional deviation of the dicing line DL (also called Margin area, resection margin).
而且,元件晶片C之周邊區域Re與切晶線DL相鄰。再者,切晶線DL係於刻劃或切斷晶圓W時所產生之加工槽,作為實際狀態係經加工之晶圓W之稜線與稜線之間的空間。於本申請中,為了方便說明,包括經加工之晶圓W之稜線在內稱為切晶線DL。Furthermore, the peripheral region Re of the element wafer C is adjacent to the dicing line DL. Furthermore, the dicing line DL is a processing groove produced when scribing or cutting the wafer W. In actual condition, it is the space between the ridge lines of the processed wafer W. In this application, for convenience of explanation, the ridge line including the processed wafer W is called the dicing line DL.
具體而言,切晶晶片檢查裝置1具備晶圓保持部2、攝像部3、相對移動部4、檢查配方登錄部5、控制部9、及電腦CN等。Specifically, the diced wafer inspection apparatus 1 includes a wafer holding part 2, an imaging part 3, a relative movement part 4, an inspection recipe registration part 5, a control part 9, a computer CN, and the like.
晶圓保持部2係保持晶圓W者。例如,經切晶之晶圓W使用晶圓環R(亦稱為平面環、切晶環)及延伸片材(未圖示)保持下表面側。具體而言,晶圓保持部2係一面經由晶圓環R等自下表面側支持晶圓W一面保持水平狀態者。更具體而言,晶圓保持部2具備上表面水平之晶圓載置台20。The wafer holding part 2 holds the wafer W. For example, the cut wafer W uses a wafer ring R (also called a plane ring, a cut ring) and an extended sheet (not shown) to maintain the lower surface side. Specifically, the wafer holding part 2 maintains a horizontal state while supporting the wafer W from the lower surface side via the wafer ring R or the like. More specifically, the wafer holding unit 2 includes a wafer mounting table 20 with a horizontal upper surface.
晶圓載置台20於與保持晶圓W之晶圓環等接觸之部分設置有槽部或孔部,該等槽部或孔部經由切換閥等與真空泵等負壓產生器件連接。而且,晶圓保持部2將該等槽部或孔部切換至負壓狀態或大氣釋放狀態,藉此可保持或解除保持晶圓環等。The wafer mounting table 20 is provided with a groove portion or a hole portion at a portion in contact with a wafer ring holding the wafer W. The groove portion or hole portion is connected to a negative pressure generating device such as a vacuum pump through a switching valve or the like. Furthermore, the wafer holding part 2 can hold or release the wafer ring or the like by switching the groove parts or the hole parts to a negative pressure state or an atmosphere release state.
攝像部3係以特定之拍攝倍率對設定於晶圓W之特定區域進行拍攝者。具體而言,攝像部3係對成為檢查對象之元件區域Rc及周邊區域Re進行拍攝者,形成為如下構成,即,以可對該等區域以適當之拍攝倍率進行拍攝之方式切換拍攝倍率進行拍攝。更具體而言,攝像部3具備鏡筒30、照明部31、半反射鏡32、複數個物鏡33a、33b、旋轉器機構34、攝像機35等。The imaging unit 3 photographs a specific area set on the wafer W at a specific imaging magnification. Specifically, the imaging unit 3 is configured to photograph the component region Rc and the peripheral region Re to be inspected, and is configured to switch the imaging magnification so that these regions can be photographed at an appropriate imaging magnification. Shoot. More specifically, the imaging unit 3 includes a lens barrel 30, an illumination unit 31, a half mirror 32, a plurality of objective lenses 33a and 33b, a rotator mechanism 34, a camera 35, and the like.
鏡筒30係以特定之姿勢固定照明部31、半反射鏡32、物鏡33a、33b、旋轉器機構34、攝像機35等而引導照明光或觀察光者。鏡筒30經由連結金屬件等(未圖示)安裝於裝置框架1f。The lens barrel 30 fixes the lighting unit 31, the half mirror 32, the objective lenses 33a, 33b, the rotator mechanism 34, the camera 35, etc. in a specific posture to guide illumination light or observation light. The lens barrel 30 is attached to the device frame 1f via connecting metal fittings or the like (not shown).
照明部31係發射出拍攝所需之照明光L1者。具體而言,照明部31可例示雷射二極體或金屬鹵素燈、氙氣燈、LED(Light Emitting Diode,發光二極體)照明等。The lighting unit 31 emits illumination light L1 required for photography. Specifically, the illumination unit 31 may include, for example, a laser diode, a metal halide lamp, a xenon lamp, LED (Light Emitting Diode, light emitting diode) lighting, or the like.
半反射鏡32係反射自照明部31發射出之照明光L1而照射至晶圓W側,並使自晶圓W側入射之光(反射光、散射光)L2通過攝像機35側者。The half mirror 32 reflects the illumination light L1 emitted from the illumination unit 31 to the wafer W side, and allows the light (reflected light, scattered light) L2 incident from the wafer W side to pass through the camera 35 side.
物鏡33a、33b係使工件W上之拍攝區域之圖像以各不相同之特定觀察倍率成像於攝像機35者。 旋轉器機構34係使用或切換物鏡33a、33b中之任一者。具體而言,旋轉器機構34係基於手動或來自外部之信號控制而以特定角度為單位旋轉及靜止者。The objective lenses 33a and 33b are used to form the image of the imaging area on the workpiece W on the camera 35 at different specific observation magnifications. The rotator mechanism 34 uses or switches any one of the objective lenses 33a and 33b. Specifically, the rotator mechanism 34 is one that rotates and stops in units of a specific angle based on manual or external signal control.
攝像機35係對工件W上之拍攝區域F進行拍攝而獲取圖像者。獲取之圖像作為影像信號或影像資料輸出至外部(於本發明中,為於下文詳細描述之晶片位置運算部)。The camera 35 captures the imaging area F on the workpiece W to obtain an image. The acquired image is output to the outside as an image signal or image data (in the present invention, it is the chip position calculation unit described in detail below).
相對移動部4係使晶圓保持部2與攝像部3相對移動者。具體而言,相對移動部4係具備X軸滑塊41、Y軸滑塊42、及旋轉機構43而構成。The relative movement unit 4 relatively moves the wafer holding unit 2 and the imaging unit 3 . Specifically, the relative movement unit 4 is configured with an X-axis slider 41 , a Y-axis slider 42 , and a rotation mechanism 43 .
X軸滑塊41係安裝於裝置框架1f上,且使Y軸滑塊42於X方向上以任意速度移動,並於任意位置靜止者。具體而言,X軸滑塊包括於X方向上延伸之1對軌道、於該軌道上移動之滑塊部、及使滑塊部移動及靜止之滑塊驅動部。滑塊驅動部可由將根據來自控制部CN之信號控制而旋轉及靜止之伺服馬達或脈衝馬達與滾珠螺桿機構組合而成者、或線性馬達機構等構成。又,X軸滑塊41具備用於檢測滑塊部之當前位置或移動量之編碼器。再者,該編碼器可例示:於被稱為線性尺規之於直線狀構件上以特定間距刻有細小之凹凸者、或檢測使滾珠螺桿旋轉之馬達之旋轉角度之旋轉編碼器等。The X-axis slider 41 is installed on the device frame 1f and allows the Y-axis slider 42 to move at any speed in the X direction and stop at any position. Specifically, the X-axis slider includes a pair of rails extending in the X direction, a slider portion that moves on the rails, and a slider driving portion that moves and stops the slider portion. The slide drive unit may be composed of a combination of a servo motor or a pulse motor that rotates and stops based on signal control from the control unit CN and a ball screw mechanism, or a linear motor mechanism. Moreover, the X-axis slider 41 is equipped with an encoder for detecting the current position or movement amount of the slider part. Examples of the encoder include a linear member with fine irregularities engraved at specific intervals called a linear scale, or a rotary encoder that detects the rotation angle of a motor that rotates a ball screw.
Y軸滑塊42係基於自控制部CN輸出之控制信號使旋轉機構43於Y方向上以任意速度移動,並於任意位置靜止者。具體而言,Y軸滑塊包括於Y方向上延伸之1對軌道、於該軌道上移動之滑塊部、及使滑塊部移動及靜止之滑塊驅動部。滑塊驅動部可由將根據來自控制部CN之信號控制而旋轉及靜止之伺服馬達或脈衝馬達與滾珠螺桿機構組合而成者、或線性馬達機構等構成。又,Y軸滑塊42具備用於檢測滑塊部之當前位置或移動量之編碼器。再者,該編碼器可例示:於被稱為線性尺規之於直線狀構件上以特定間距刻有細小之凹凸者、或檢測使滾珠螺桿旋轉之馬達之旋轉角度之旋轉編碼器等。The Y-axis slider 42 moves the rotating mechanism 43 at any speed in the Y direction and stops at any position based on the control signal output from the control unit CN. Specifically, the Y-axis slider includes a pair of rails extending in the Y direction, a slider portion that moves on the rails, and a slider driving portion that moves and stops the slider portion. The slide drive unit may be composed of a combination of a servo motor or a pulse motor that rotates and stops based on signal control from the control unit CN and a ball screw mechanism, or a linear motor mechanism. Moreover, the Y-axis slider 42 is equipped with an encoder for detecting the current position or movement amount of the slider part. Examples of the encoder include a linear member with fine irregularities engraved at specific intervals called a linear scale, or a rotary encoder that detects the rotation angle of a motor that rotates a ball screw.
旋轉機構43係使晶圓載置台20於θ方向上以任意速度旋轉,並於任意角度靜止者。具體而言,旋轉機構43可例示:直接驅動馬達等之根據來自外部機器之信號控制而旋轉/靜止至任意角度者。於旋轉機構43之旋轉側之構件之上安裝有晶圓保持部2之晶圓載置台20。The rotation mechanism 43 rotates the wafer mounting table 20 in the θ direction at any speed and stops it at any angle. Specifically, the rotating mechanism 43 may be, for example, a direct drive motor or the like that is controlled by a signal from an external device to rotate/stationary to an arbitrary angle. The wafer mounting table 20 of the wafer holding part 2 is mounted on the member on the rotation side of the rotating mechanism 43 .
由於相對移動部4形成為此種構成,故而在保持成為檢查對象之晶圓W之狀態下,可使晶圓W相對於攝像部3於XYθ方向上分別獨立或複合地以特定速度或角度相對移動,或於任意位置、角度靜止。Since the relative movement unit 4 has such a structure, while holding the wafer W to be inspected, the wafer W can be opposed to the imaging unit 3 at a specific speed or angle in the XYθ direction, independently or in combination. Move, or stay still at any position or angle.
圖2係表示實現本發明之形態之一例的主要部分之立體圖。圖2表示一面使晶圓W與攝像部3沿著切晶線DL相對移動而使拍攝區域F於箭頭Vs所示之方向上移動,一面對元件晶片C之周邊區域Re逐次進行拍攝之情況。FIG. 2 is a perspective view of main parts showing an example of an embodiment of the present invention. FIG. 2 shows a situation in which the peripheral area Re of the device wafer C is sequentially photographed while the wafer W and the imaging unit 3 are relatively moved along the dicing line DL and the imaging area F is moved in the direction indicated by the arrow Vs. .
檢查配方登錄部5係將相對移動部4中之相對移動之方向及速度、以及攝像部3中之拍攝倍率及拍攝位置等作為檢查配方進行登錄者。而且,於檢查配方登錄部5,可登錄與於下文詳細描述之元件區域檢查模式及周邊區域檢查模式相關之檢查配方,已登錄有用於執行該等模式雙方或至少一者之檢查配方。具體而言,檢查配方登錄部5可將於元件區域檢查模式及周邊區域檢查模式之各模式下,以哪種拍攝倍率按照哪種順序(即拍攝路線T)對晶圓W之哪個場所進行拍攝、或如何設定此時之移動速度與拍攝間隔或移動間距與饋送速度等資訊(亦稱為配方資訊)作為每個檢查品種之檢查配方進行登錄。The inspection recipe registration unit 5 registers the direction and speed of relative movement in the relative movement unit 4 and the imaging magnification and imaging position in the imaging unit 3 as inspection recipes. Furthermore, in the inspection recipe registration section 5, inspection recipes related to the component area inspection mode and the peripheral area inspection mode described in detail below can be registered, and inspection recipes for executing both or at least one of these modes have been registered. Specifically, the inspection recipe registration unit 5 can photograph which location on the wafer W at which imaging magnification and in which order (i.e., imaging route T) in each of the component area inspection mode and the peripheral area inspection mode. , or how to set the moving speed and shooting interval or the moving distance and feeding speed at this time (also called recipe information) are registered as the inspection recipe for each inspection type.
控制部9例如承擔如下所示之功能或作用。 ・對晶圓保持部2輸出保持/解除晶圓W之信號 ・控制旋轉器機構34,切換使用之物鏡(拍攝倍率) ・對攝像機35輸出拍攝觸發 ・相對移動部4之驅動控制:一面監測X軸滑塊41、Y軸滑塊42、旋轉機構43之當前位置,一面輸出驅動用信號之功能 ・拍攝位置或拍攝路線T、拍攝間隔(間距、區間)之登錄 ・檢查配方之登錄、使用之檢查配方之切換 ・基於所拍攝之圖像之檢查The control unit 9 has, for example, the following functions or effects. ・Outputs a signal for holding/releasing the wafer W to the wafer holding unit 2 ・Control the rotator mechanism 34 to switch the objective lens (photography magnification) used ・Output shooting trigger to camera 35 ・Drive control of the relative moving unit 4: A function that monitors the current positions of the X-axis slider 41, the Y-axis slider 42, and the rotating mechanism 43 while outputting a driving signal ・Registration of shooting location or shooting route T, shooting interval (spacing, interval) ・Registration of check recipes and switching of used check recipes ・Inspection based on captured images
更具體而言,控制部9具備電腦CN或可程式化邏輯控制器等(即硬體)、及其執行程式等(即軟體)。又,檢查配方登錄部5包括電腦CN之記憶部(暫存器、記憶體、HDD(Hard Disk Drive,硬盤驅動器)、SSD(Solid State Drive,固態驅動器)等)之一部分。More specifically, the control unit 9 includes a computer CN or a programmable logic controller (ie, hardware), and an execution program thereof (ie, software). In addition, the inspection recipe registration unit 5 includes a part of the memory unit (register, memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc.) of the computer CN.
進而,控制部9係基於檢查配方控制攝像部3及相對移動部4者,具備對被稱為周邊區域檢查模式及元件區域檢查模式之動作模式進行設定之器件(例如設定畫面等)以及執行器件(電腦CN及控制機器等)。Furthermore, the control unit 9 controls the imaging unit 3 and the relative movement unit 4 based on the inspection recipe, and includes a device (such as a setting screen, etc.) and an execution device for setting operation modes called peripheral area inspection mode and component area inspection mode. (Computer CN and control machinery, etc.).
圖3係實現本發明之形態之一例之概念圖。於圖3中例示有周邊區域檢查模式中之拍攝路線T或拍攝區域F。FIG. 3 is a conceptual diagram of an example of a mode for realizing the present invention. FIG. 3 illustrates an imaging route T or an imaging area F in the surrounding area inspection mode.
周邊區域檢查模式係指以特定之拍攝倍率(相對高倍率)按包括經切晶之晶圓W之切晶線DL之方式一面沿著該切晶線DL一面進行拍攝,而檢查元件晶片C之周邊區域Re之動作模式。The peripheral area inspection mode refers to photographing one side of the cut wafer W including the dicing line DL at a specific imaging magnification (relatively high magnification) along the dicing line DL, and inspecting the component wafer C. Action pattern of surrounding area Re.
具體而言,於周邊區域檢查模式中,如圖3(a)所示,按照以沿著於X方向上延伸之切晶線DL之方式使拍攝區域F相對移動之拍攝路線T進行拍攝,其次如圖3(b)所示,一面按照以沿著於Y方向上延伸之切晶線DL之方式使拍攝區域F相對移動之拍攝路線T進行拍攝,一面遍及晶圓W之整個面以可確實地檢測出隱藏於切晶線DL之裂縫或碎屑等缺陷之程度之特定之拍攝倍率(相對高倍率)進行周邊區域Re之檢查。Specifically, in the peripheral area inspection mode, as shown in FIG. 3(a) , the imaging is performed along the imaging route T that relatively moves the imaging area F along the cutting line DL extending in the X direction. Next, As shown in FIG. 3(b) , the entire surface of the wafer W can be accurately captured while following the imaging path T that relatively moves the imaging area F along the dicing line DL extending in the Y direction. The surrounding area Re is inspected at a specific imaging magnification (relatively high magnification) to detect the extent of defects such as cracks or chips hidden in the wafer line DL.
更具體而言,於周邊區域檢查模式中,進行邊緣抽選處理,檢測元件晶片C之晶片端部(即稜線),檢查該稜線之一部分是否未進入預先設定之禁止侵入區域,自該稜線延伸之裂縫或碎屑等是否未進入禁止侵入區域等。More specifically, in the peripheral area inspection mode, an edge extraction process is performed to detect the chip end of the component chip C (i.e., the ridge), and check whether a part of the ridge does not enter the preset no-intrusion area and extends from the ridge. Whether cracks or debris, etc. do not enter the prohibited trespassing area, etc.
再者,於圖3所示之實施例中,以如橫跨切晶線DL之位置關係同時拍攝相鄰配置之複數個元件晶片之周邊區域Re,以此方式於檢查配方登錄部5中設定拍攝倍率或拍攝區域F、拍攝路線T等。Furthermore, in the embodiment shown in FIG. 3 , the peripheral areas Re of a plurality of adjacently arranged component wafers are simultaneously photographed in a positional relationship across the dicing line DL, and are set in the inspection recipe registration unit 5 in this manner. Shooting magnification or shooting area F, shooting route T, etc.
圖4係實現本發明之形態之一例之概念圖。於圖4中例示有元件區域檢查模式中之拍攝路線T、拍攝區域F。FIG. 4 is a conceptual diagram of an example of a mode for realizing the present invention. FIG. 4 illustrates an imaging route T and an imaging area F in the component area inspection mode.
元件區域檢查模式係指如下之動作模式:以較周邊區域檢查模式中之拍攝倍率低之拍攝倍率按照以跳過經切晶之晶圓W之切晶線DL之方式使拍攝區域F相對移動之拍攝路線T進行拍攝,從而遍及晶圓W之整個面檢查元件晶片C之元件區域Rc。The component area inspection mode refers to an operation mode in which the imaging area F is relatively moved at a lower imaging magnification than the imaging magnification in the peripheral area inspection mode in such a manner as to skip the dicing line DL of the cut wafer W. The device region Rc of the device wafer C is inspected over the entire surface of the wafer W by photographing along the imaging path T.
具體而言,於元件區域檢查模式中,以可判別於元件區域Rc上是否產生異物或損傷等、是否產生明顯之圖案崩壞或成膜不良等之程度之特定倍率(相對低倍率)進行元件區域Rc之拍攝、檢查。Specifically, in the device area inspection mode, the device is inspected at a specific magnification (relatively low magnification) at a level that can determine whether foreign matter or damage has occurred on the device area Rc, or whether obvious pattern collapse or film formation failure has occurred. Photography and inspection of area Rc.
更具體而言,元件區域檢查模式預先登錄有於元件區域Rc上未產生異物或損傷、圖案崩壞或成膜不良等之狀態之圖像(所謂教示圖像),比較該教示圖像與自此為了進行檢查而拍攝所得之元件區域Rc之圖像,檢查於元件區域Rc上是否產生異物或損傷、圖案崩壞或成膜不良等。More specifically, in the device area inspection mode, an image (so-called teaching image) of a state in which foreign matter, damage, pattern collapse, or film formation failure does not occur on the device area Rc is pre-registered, and the teaching image is compared with the original image. This image of the device area Rc is taken for inspection to check whether foreign matter, damage, pattern collapse, film formation failure, etc. are generated in the device area Rc.
再者,於圖4所示之實施例中,以元件區域檢查模式所拍攝之特定區域跳過以周邊區域檢查模式所拍攝之特定區域之方式,於檢查配方登錄部5中設定拍攝倍率或拍攝區域F、拍攝路線T等。Furthermore, in the embodiment shown in FIG. 4 , the photography magnification or photography is set in the inspection recipe registration part 5 in such a way that the specific area photographed in the component area inspection mode skips the specific area photographed in the peripheral area inspection mode. Area F, shooting route T, etc.
圖5係將本發明之形態具體化之一例之流程圖。於圖5中,使用切晶晶片檢查裝置1對配置於晶圓W之元件晶片C之元件區域Rc及周邊區域Re進行拍攝、檢查之構成作為一連串之流程顯示於每個步驟。FIG. 5 is a flow chart illustrating an example of a specific embodiment of the present invention. In FIG. 5 , the structure of photographing and inspecting the device area Rc and the peripheral area Re of the device wafer C arranged on the wafer W using the diced wafer inspection apparatus 1 is shown as a series of steps in each step.
首先,設定檢查配方(步驟s11),決定晶圓W之檢查模式或順序。其次,將晶圓W載置於切晶晶片檢查裝置1之晶圓載置台20(步驟s12),向晶圓W上所形成之基準標記(未圖示)之讀取位置移動,並進行對準(步驟s13)。First, the inspection recipe is set (step s11), and the inspection mode or sequence of the wafer W is determined. Next, the wafer W is placed on the wafer mounting table 20 of the diced wafer inspection device 1 (step s12), moved to the reading position of the reference mark (not shown) formed on the wafer W, and aligned. (step s13).
繼而,基於檢查配方,切換至周邊區域檢查模式(步驟s21),以選擇高倍率透鏡之方式使旋轉器機構34旋轉(步驟s22)。然後,一面使攝像部3與相對移動部4相對移動,一面進行拍攝、檢查(步驟s23)。判別以該模式之拍攝是否全部結束(步驟s24),若未結束,則繼續拍攝、檢查。若拍攝結束,則判別是否執行其他檢查模式(步驟s25)。Then, based on the inspection recipe, the peripheral area inspection mode is switched (step s21), and the rotator mechanism 34 is rotated to select a high-magnification lens (step s22). Then, imaging and inspection are performed while relatively moving the imaging unit 3 and the relative movement unit 4 (step s23). It is determined whether all the shooting in this mode is completed (step s24). If not, the shooting and inspection are continued. If the shooting is completed, it is determined whether to execute another inspection mode (step s25).
然後,若執行其他檢查模式(即元件區域檢查模式),則切換至元件區域檢查模式(步驟s31),以選擇低倍率透鏡之方式使旋轉器機構34旋轉(步驟s32)。然後,一面使攝像部3與相對移動部4相對移動,一面進行拍攝、檢查(步驟s33)。判別以該模式之拍攝是否全部結束(步驟s34),若未結束,則繼續拍攝、檢查。若拍攝結束,則將晶圓W抽出至裝置外(步驟s41)。再者,於上述步驟s25中,不執行其他檢查模式之情形時,亦將晶圓W抽出至裝置外(步驟s41)。Then, if another inspection mode (ie, component area inspection mode) is executed, the component area inspection mode is switched (step s31), and the rotator mechanism 34 is rotated to select a low-magnification lens (step s32). Then, imaging and inspection are performed while relatively moving the imaging unit 3 and the relative movement unit 4 (step s33). It is determined whether all the shooting in this mode is completed (step s34). If not, the shooting and inspection are continued. When the imaging is completed, the wafer W is extracted out of the apparatus (step s41). Furthermore, in the above-mentioned step s25, when other inspection modes are not executed, the wafer W is also extracted out of the device (step s41).
然後,判別是否進行下一個晶圓W之拍攝、檢查(步驟s42),於進行拍攝、檢查之情形時,重複上述步驟s12~s41。另一方面,於不進行拍攝、檢查之情形時,結束檢查。Then, it is determined whether to perform imaging and inspection of the next wafer W (step s42). When imaging and inspection are performed, the above steps s12 to s41 are repeated. On the other hand, when there is no photography or inspection to be performed, the inspection is terminated.
再者,於上述中,例示有如下順序:首先執行周邊區域檢查模式,其後執行元件區域檢查模式。但,於使本發明具體化之方面,該等檢查模式之順序亦可相反。又,該等檢查模式係表示一連串之動作流程或狀態者,不限於在檢查配方所明示之狀態下進行登錄之情形,亦包括未明示而登錄有不同之拍攝倍率或拍攝路線T等之情形。Furthermore, in the above, the following sequence is exemplified: first, the peripheral area inspection mode is executed, and then the component area inspection mode is executed. However, in order to embody the present invention, the order of the inspection modes may also be reversed. In addition, these inspection modes represent a series of action processes or states, and are not limited to the case of registration in the state explicitly stated in the inspection recipe, but also include cases where different shooting magnifications or shooting routes T, etc. are registered without being expressly stated.
再者,由控制部9向攝像部3輸出拍攝觸發可例示如下所述之方式。 ・一面於X方向或Y方向上進行掃描相對移動,一面每移動特定距離則以極短時間發光(所謂閃光儀發光)發出照明光L1之方式。 ・或,相對移動及靜止至特定位置,於靜止狀態下照射照明光L1進行拍攝(所謂步進&重複)之方式。Furthermore, the control unit 9 may output the shooting trigger to the imaging unit 3 in the following manner. ・While scanning relative movement in the X direction or Y direction, each time it moves a specific distance, it emits illumination light L1 for a very short time (so-called flash light). ・Or, a method of relatively moving and stationary to a specific position, and shooting with illumination light L1 in a stationary state (so-called step & repeat).
又,拍攝觸發意指針對攝像機35或圖像處理裝置(未圖示)之圖像取入指示、照明光L1之發光指示等。具體而言,作為拍攝觸發,於(實例1)攝像機35可拍攝之時間(所謂曝光時間)之間,以閃光儀發光發出照明光L1,或於(實例2)照射照明光L1之時間內,進行拍攝。或,拍攝觸發不限於針對攝像機35之指示,亦可為(實例3)針對獲取圖像之圖像處理裝置之圖像取入指示。藉此,亦可對應自攝像機35逐次輸出影像信號或影像資料之形態。In addition, the shooting trigger means an image capture instruction for the camera 35 or an image processing device (not shown), an instruction for lighting the illumination light L1, etc. Specifically, as a shooting trigger, the flash device emits illumination light L1 during the time (so-called exposure time) when the camera 35 can take pictures (Example 1), or during the time when the illumination light L1 is irradiated (Example 2), Take the shot. Alternatively, the shooting trigger is not limited to an instruction to the camera 35, but may also be (Example 3) an image acquisition instruction to an image processing device that acquires an image. This can also correspond to the form of sequentially outputting image signals or image data from the camera 35 .
由於本發明之切晶晶片檢查裝置1形成為此種構成,故而於周邊區域檢查模式中,能夠以高倍率之視野尺寸對沿著切晶線之區域(即周邊區域Re)進行拍攝,從而確實地檢測出(即檢查)裂縫或碎屑等缺陷。另一方面,於元件區域檢查模式中,能夠以相對較低之倍率之視野尺寸對元件晶片C之元件區域Rc進行拍攝,從而縮短檢查時間。即,切晶晶片檢查裝置1可於特定時間內以特定精度檢查元件區域Rc及周邊區域Re雙方。Since the diced wafer inspection device 1 of the present invention has such a structure, in the peripheral area inspection mode, the area along the dicing line (that is, the peripheral area Re) can be photographed with a high-magnification field of view size, thereby reliably Defects such as cracks or chips are easily detected (i.e. inspected). On the other hand, in the component area inspection mode, the component area Rc of the component wafer C can be photographed with a relatively low magnification field of view size, thereby shortening the inspection time. That is, the diced wafer inspection apparatus 1 can inspect both the device area Rc and the peripheral area Re with specific accuracy within a specific time.
[其他形態] 再者,於上述中,例示有如下構成,即,以如橫跨切晶線DL之位置關係同時拍攝相鄰配置之複數個元件晶片C之周邊區域Rc,以此方式於檢查配方登錄部5中設定拍攝倍率或拍攝區域F、拍攝路線T等。[Other forms] Furthermore, in the above description, a configuration is exemplified in which the peripheral areas Rc of a plurality of adjacently arranged element wafers C are simultaneously imaged in a positional relationship across the dicing line DL, and in this way, the inspection recipe registration unit 5 Set the shooting magnification, shooting area F, shooting route T, etc.
若為此種構成,則可減少拍攝次數,且可縮短每片晶圓W所花費之檢查時間,故而較佳。Such a configuration is preferable because the number of shots can be reduced and the inspection time required for each wafer W can be shortened.
但,於相對於拍攝區域F,切晶線DL之寬度較粗,周邊區域Re之稜線容易超出視野之情形,或當應檢測出之破裂或缺損較小而提高拍攝倍率時,無法以如橫跨切晶線DL之位置關係同時拍攝之情形時,亦可為對1個元件晶片C之周邊區域Rc進行拍攝之形態。However, when the width of the cutting line DL is relatively large relative to the imaging area F, and the ridge lines in the peripheral area Re easily exceed the field of view, or when the cracks or defects to be detected are small and the imaging magnification is increased, it is not possible to use the same method horizontally. When simultaneously photographing the positional relationship across the dicing line DL, the peripheral area Rc of one element wafer C may be photographed.
1:切晶晶片檢查裝置 1f:裝置框架 2:晶圓保持部 3:攝像部 4:相對移動部 5:檢查配方登錄部 9:控制部 20:晶圓載置台 30:鏡筒 31:照明部 32:半反射鏡 33a:物鏡 33b:物鏡 34:旋轉器機構 35:攝像機 41:X軸滑塊 42:Y軸滑塊 43:旋轉機構 C:元件晶片 CN:控制部 DL:切晶線(槽/間隙) F:拍攝區域(視野) L1:照明光 L2:自晶圓側入射之光(反射光、散射光) R:晶圓環 Rc:元件區域 Re:周邊區域(稜線附近) T:拍攝路線 W:晶圓1: Cut wafer inspection device 1f:Device frame 2: Wafer holding part 3:Camera Department 4: Relative movement part 5: Check the recipe login section 9:Control Department 20:Wafer mounting table 30: Lens tube 31:Lighting Department 32: Half mirror 33a:Objective lens 33b:Objective lens 34:Rotator mechanism 35:Camera 41:X-axis slider 42: Y-axis slider 43: Rotating mechanism C: component chip CN:Control Department DL: Cutting line (slot/gap) F: Shooting area (field of view) L1: illumination light L2: Light incident from the wafer side (reflected light, scattered light) R:wafer ring Rc: component area Re: Surrounding area (near the ridge) T:shooting route W:wafer
圖1係表示實現本發明之形態之一例的整體構成之概略圖。 圖2係表示實現本發明之形態之一例的主要部分之立體圖。 圖3(a)、(b)係實現本發明之形態之一例之概念圖。 圖4係實現本發明之形態之一例之概念圖。 圖5係實現本發明之形態之一例之流程圖。FIG. 1 is a schematic diagram showing the overall structure of an example of implementing the present invention. FIG. 2 is a perspective view of main parts showing an example of an embodiment of the present invention. 3(a) and (b) are conceptual diagrams of an example of a mode for realizing the present invention. FIG. 4 is a conceptual diagram of an example of a mode for realizing the present invention. FIG. 5 is a flowchart of an example of implementing the present invention.
3:攝像部 3:Camera Department
35:攝像機 35:Camera
C:元件晶片 C: component chip
DL:切晶線(槽/間隙) DL: Cutting line (slot/gap)
F:拍攝區域(視野) F: Shooting area (field of view)
Rc:元件區域 Rc: component area
Re:周邊區域(稜線附近) Re: Surrounding area (near the ridge)
W:晶圓 W:wafer
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