TWI827402B - 鍵合頭以及包括該鍵合頭的鍵合裝置 - Google Patents
鍵合頭以及包括該鍵合頭的鍵合裝置 Download PDFInfo
- Publication number
- TWI827402B TWI827402B TW111148636A TW111148636A TWI827402B TW I827402 B TWI827402 B TW I827402B TW 111148636 A TW111148636 A TW 111148636A TW 111148636 A TW111148636 A TW 111148636A TW I827402 B TWI827402 B TW I827402B
- Authority
- TW
- Taiwan
- Prior art keywords
- block
- wafer
- antistatic
- heating
- bonding head
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 173
- 238000001816 cooling Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 229910000510 noble metal Inorganic materials 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 230000003746 surface roughness Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 112
- 238000012546 transfer Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 229910010293 ceramic material Inorganic materials 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 210000000078 claw Anatomy 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H05F3/00—Carrying-off electrostatic charges
- H05F3/02—Carrying-off electrostatic charges by means of earthing connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2021-0182521 | 2021-12-20 | ||
| KR1020210182521A KR102435062B1 (ko) | 2021-12-20 | 2021-12-20 | 본딩 헤드 및 이를 포함하는 본딩 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202326882A TW202326882A (zh) | 2023-07-01 |
| TWI827402B true TWI827402B (zh) | 2023-12-21 |
Family
ID=83103087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111148636A TWI827402B (zh) | 2021-12-20 | 2022-12-19 | 鍵合頭以及包括該鍵合頭的鍵合裝置 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102435062B1 (ko) |
| CN (1) | CN116313860A (ko) |
| TW (1) | TWI827402B (ko) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013065733A (ja) * | 2011-09-19 | 2013-04-11 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ |
| KR20190001271A (ko) * | 2017-06-27 | 2019-01-04 | 주식회사 미코 | 본딩 헤드 및 이를 갖는 본딩 장치 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006237348A (ja) * | 2005-02-25 | 2006-09-07 | Ulvac Japan Ltd | 静電チャック及びこれを備えた真空処理装置 |
| KR101385443B1 (ko) * | 2013-09-13 | 2014-04-16 | 이향이 | 반도체 칩 픽업 이송용 콜렛 |
| KR102592226B1 (ko) * | 2018-07-17 | 2023-10-23 | 삼성전자주식회사 | 반도체 패키지 본딩헤드 및 본딩방법 |
| KR20200129751A (ko) * | 2019-05-10 | 2020-11-18 | (주)포인트엔지니어링 | 마이크로 led 흡착체 및 이를 이용한 마이크로 led 디스플레이 제작 방법 및 마이크로 led 디스플레이 |
-
2021
- 2021-12-20 KR KR1020210182521A patent/KR102435062B1/ko active IP Right Grant
-
2022
- 2022-12-02 CN CN202211540871.3A patent/CN116313860A/zh active Pending
- 2022-12-19 TW TW111148636A patent/TWI827402B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013065733A (ja) * | 2011-09-19 | 2013-04-11 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ |
| KR20190001271A (ko) * | 2017-06-27 | 2019-01-04 | 주식회사 미코 | 본딩 헤드 및 이를 갖는 본딩 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116313860A (zh) | 2023-06-23 |
| KR102435062B1 (ko) | 2022-08-22 |
| TW202326882A (zh) | 2023-07-01 |
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