TWI827222B - 肖特基能障二極體 - Google Patents

肖特基能障二極體 Download PDF

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Publication number
TWI827222B
TWI827222B TW111132597A TW111132597A TWI827222B TW I827222 B TWI827222 B TW I827222B TW 111132597 A TW111132597 A TW 111132597A TW 111132597 A TW111132597 A TW 111132597A TW I827222 B TWI827222 B TW I827222B
Authority
TW
Taiwan
Prior art keywords
barrier diode
schottky barrier
trench
anode electrode
drift layer
Prior art date
Application number
TW111132597A
Other languages
English (en)
Chinese (zh)
Other versions
TW202322404A (zh
Inventor
有馬潤
藤田実
川崎克己
平林潤
Original Assignee
日商Ｔｄｋ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｔｄｋ股份有限公司 filed Critical 日商Ｔｄｋ股份有限公司
Publication of TW202322404A publication Critical patent/TW202322404A/zh
Application granted granted Critical
Publication of TWI827222B publication Critical patent/TWI827222B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
TW111132597A 2021-11-29 2022-08-30 肖特基能障二極體 TWI827222B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-193059 2021-11-29
JP2021193059A JP7843603B2 (ja) 2021-11-29 2021-11-29 ショットキーバリアダイオード

Publications (2)

Publication Number Publication Date
TW202322404A TW202322404A (zh) 2023-06-01
TWI827222B true TWI827222B (zh) 2023-12-21

Family

ID=86539135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111132597A TWI827222B (zh) 2021-11-29 2022-08-30 肖特基能障二極體

Country Status (6)

Country Link
US (1) US20240313129A1 (https=)
JP (1) JP7843603B2 (https=)
CN (1) CN118339662A (https=)
DE (1) DE112022005727T5 (https=)
TW (1) TWI827222B (https=)
WO (1) WO2023095395A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118841453A (zh) * 2024-08-09 2024-10-25 乐山希尔电子股份有限公司 一种垂直型宽禁带肖特基功率二极管及其制备方法
CN119451139A (zh) * 2024-10-31 2025-02-14 中国电子科技集团公司第五十八研究所 一种沟槽型氧化镓异质结势垒肖特基二极管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200631186A (en) * 2005-01-14 2006-09-01 Int Rectifier Corp Trench schottky barrier diode with differential oxide thickness
TW201828409A (zh) * 2017-01-25 2018-08-01 聯華電子股份有限公司 半導體元件及其製造方法
WO2019082580A1 (ja) * 2017-10-26 2019-05-02 Tdk株式会社 ショットキーバリアダイオード
TW201942976A (zh) * 2018-03-30 2019-11-01 日商Ｔｄｋ股份有限公司 肖特基能障二極體
WO2021124649A1 (ja) * 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
JP2009177028A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 半導体装置
TWI521719B (zh) * 2012-06-27 2016-02-11 財團法人工業技術研究院 雙凹溝槽式蕭基能障元件
CN103456627B (zh) * 2013-08-28 2016-04-06 中航（重庆）微电子有限公司 一种复合型沟槽栅肖特基器件结构及其制造方法
TWI726964B (zh) * 2015-12-25 2021-05-11 日商出光興產股份有限公司 積層體
JP6845397B2 (ja) 2016-04-28 2021-03-17 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP6980116B2 (ja) * 2018-08-22 2021-12-15 三菱電機株式会社 酸化物半導体装置及びその製造方法
JP7371484B2 (ja) * 2019-12-18 2023-10-31 Tdk株式会社 ショットキーバリアダイオード

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200631186A (en) * 2005-01-14 2006-09-01 Int Rectifier Corp Trench schottky barrier diode with differential oxide thickness
TW201828409A (zh) * 2017-01-25 2018-08-01 聯華電子股份有限公司 半導體元件及其製造方法
WO2019082580A1 (ja) * 2017-10-26 2019-05-02 Tdk株式会社 ショットキーバリアダイオード
TW201942976A (zh) * 2018-03-30 2019-11-01 日商Ｔｄｋ股份有限公司 肖特基能障二極體
WO2021124649A1 (ja) * 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード

Also Published As

Publication number Publication date
JP2023079551A (ja) 2023-06-08
DE112022005727T5 (de) 2024-09-19
JP7843603B2 (ja) 2026-04-10
TW202322404A (zh) 2023-06-01
WO2023095395A1 (ja) 2023-06-01
US20240313129A1 (en) 2024-09-19
CN118339662A (zh) 2024-07-12

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