DE112022005727T5 - Schottky-Barriere-Diode - Google Patents

Schottky-Barriere-Diode Download PDF

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Publication number
DE112022005727T5
DE112022005727T5 DE112022005727.0T DE112022005727T DE112022005727T5 DE 112022005727 T5 DE112022005727 T5 DE 112022005727T5 DE 112022005727 T DE112022005727 T DE 112022005727T DE 112022005727 T5 DE112022005727 T5 DE 112022005727T5
Authority
DE
Germany
Prior art keywords
barrier diode
schottky barrier
anode electrode
outer peripheral
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022005727.0T
Other languages
German (de)
English (en)
Inventor
Jun Arima
Minoru Fujita
Katsumi Kawasaki
Jun Hirabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Publication of DE112022005727T5 publication Critical patent/DE112022005727T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112022005727.0T 2021-11-29 2022-08-12 Schottky-Barriere-Diode Pending DE112022005727T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-193059 2021-11-29
JP2021193059A JP7843603B2 (ja) 2021-11-29 2021-11-29 ショットキーバリアダイオード
PCT/JP2022/030765 WO2023095395A1 (ja) 2021-11-29 2022-08-12 ショットキーバリアダイオード

Publications (1)

Publication Number Publication Date
DE112022005727T5 true DE112022005727T5 (de) 2024-09-19

Family

ID=86539135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022005727.0T Pending DE112022005727T5 (de) 2021-11-29 2022-08-12 Schottky-Barriere-Diode

Country Status (6)

Country Link
US (1) US20240313129A1 (https=)
JP (1) JP7843603B2 (https=)
CN (1) CN118339662A (https=)
DE (1) DE112022005727T5 (https=)
TW (1) TWI827222B (https=)
WO (1) WO2023095395A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118841453A (zh) * 2024-08-09 2024-10-25 乐山希尔电子股份有限公司 一种垂直型宽禁带肖特基功率二极管及其制备方法
CN119451139A (zh) * 2024-10-31 2025-02-14 中国电子科技集团公司第五十八研究所 一种沟槽型氧化镓异质结势垒肖特基二极管

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017199869A (ja) 2016-04-28 2017-11-02 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
JP2009177028A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 半導体装置
TWI521719B (zh) * 2012-06-27 2016-02-11 財團法人工業技術研究院 雙凹溝槽式蕭基能障元件
CN103456627B (zh) * 2013-08-28 2016-04-06 中航（重庆）微电子有限公司 一种复合型沟槽栅肖特基器件结构及其制造方法
TWI726964B (zh) * 2015-12-25 2021-05-11 日商出光興產股份有限公司 積層體
TWI715711B (zh) * 2017-01-25 2021-01-11 聯華電子股份有限公司 半導體元件及其製造方法
JP7045008B2 (ja) * 2017-10-26 2022-03-31 Tdk株式会社 ショットキーバリアダイオード
JP7165322B2 (ja) * 2018-03-30 2022-11-04 Tdk株式会社 ショットキーバリアダイオード
JP6980116B2 (ja) * 2018-08-22 2021-12-15 三菱電機株式会社 酸化物半導体装置及びその製造方法
JP7371484B2 (ja) * 2019-12-18 2023-10-31 Tdk株式会社 ショットキーバリアダイオード
JP7415537B2 (ja) * 2019-12-18 2024-01-17 Tdk株式会社 ショットキーバリアダイオード

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017199869A (ja) 2016-04-28 2017-11-02 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード

Also Published As

Publication number Publication date
JP2023079551A (ja) 2023-06-08
TWI827222B (zh) 2023-12-21
JP7843603B2 (ja) 2026-04-10
TW202322404A (zh) 2023-06-01
WO2023095395A1 (ja) 2023-06-01
US20240313129A1 (en) 2024-09-19
CN118339662A (zh) 2024-07-12

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