JP7843603B2 - ショットキーバリアダイオード - Google Patents

ショットキーバリアダイオード

Info

Publication number
JP7843603B2
JP7843603B2 JP2021193059A JP2021193059A JP7843603B2 JP 7843603 B2 JP7843603 B2 JP 7843603B2 JP 2021193059 A JP2021193059 A JP 2021193059A JP 2021193059 A JP2021193059 A JP 2021193059A JP 7843603 B2 JP7843603 B2 JP 7843603B2
Authority
JP
Japan
Prior art keywords
trench
barrier diode
schottky barrier
anode electrode
drift layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021193059A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023079551A (ja
JP2023079551A5 (https=
Inventor
潤 有馬
実 藤田
克己 川崎
潤 平林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2021193059A priority Critical patent/JP7843603B2/ja
Priority to CN202280079145.8A priority patent/CN118339662A/zh
Priority to PCT/JP2022/030765 priority patent/WO2023095395A1/ja
Priority to DE112022005727.0T priority patent/DE112022005727T5/de
Priority to TW111132597A priority patent/TWI827222B/zh
Publication of JP2023079551A publication Critical patent/JP2023079551A/ja
Priority to US18/676,077 priority patent/US20240313129A1/en
Publication of JP2023079551A5 publication Critical patent/JP2023079551A5/ja
Application granted granted Critical
Publication of JP7843603B2 publication Critical patent/JP7843603B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2021193059A 2021-11-29 2021-11-29 ショットキーバリアダイオード Active JP7843603B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021193059A JP7843603B2 (ja) 2021-11-29 2021-11-29 ショットキーバリアダイオード
PCT/JP2022/030765 WO2023095395A1 (ja) 2021-11-29 2022-08-12 ショットキーバリアダイオード
DE112022005727.0T DE112022005727T5 (de) 2021-11-29 2022-08-12 Schottky-Barriere-Diode
CN202280079145.8A CN118339662A (zh) 2021-11-29 2022-08-12 肖特基势垒二极管
TW111132597A TWI827222B (zh) 2021-11-29 2022-08-30 肖特基能障二極體
US18/676,077 US20240313129A1 (en) 2021-11-29 2024-05-28 Schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021193059A JP7843603B2 (ja) 2021-11-29 2021-11-29 ショットキーバリアダイオード

Publications (3)

Publication Number Publication Date
JP2023079551A JP2023079551A (ja) 2023-06-08
JP2023079551A5 JP2023079551A5 (https=) 2024-11-21
JP7843603B2 true JP7843603B2 (ja) 2026-04-10

Family

ID=86539135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021193059A Active JP7843603B2 (ja) 2021-11-29 2021-11-29 ショットキーバリアダイオード

Country Status (6)

Country Link
US (1) US20240313129A1 (https=)
JP (1) JP7843603B2 (https=)
CN (1) CN118339662A (https=)
DE (1) DE112022005727T5 (https=)
TW (1) TWI827222B (https=)
WO (1) WO2023095395A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118841453A (zh) * 2024-08-09 2024-10-25 乐山希尔电子股份有限公司 一种垂直型宽禁带肖特基功率二极管及其制备方法
CN119451139A (zh) * 2024-10-31 2025-02-14 中国电子科技集团公司第五十八研究所 一种沟槽型氧化镓异质结势垒肖特基二极管

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004521480A (ja) 2000-08-31 2004-07-15 ゼネラル セミコンダクター，インク． トレンチショットキー整流器
JP2009177028A (ja) 2008-01-25 2009-08-06 Toshiba Corp 半導体装置
CN103456627A (zh) 2013-08-28 2013-12-18 中航（重庆）微电子有限公司 一种复合型沟槽栅肖特基器件结构及其制造方法
WO2017111173A1 (ja) 2015-12-25 2017-06-29 出光興産株式会社 積層体
JP2021097168A (ja) 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード
JP2021097169A (ja) 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
TWI521719B (zh) * 2012-06-27 2016-02-11 財團法人工業技術研究院 雙凹溝槽式蕭基能障元件
JP6845397B2 (ja) 2016-04-28 2021-03-17 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
TWI715711B (zh) * 2017-01-25 2021-01-11 聯華電子股份有限公司 半導體元件及其製造方法
JP7045008B2 (ja) * 2017-10-26 2022-03-31 Tdk株式会社 ショットキーバリアダイオード
JP7165322B2 (ja) * 2018-03-30 2022-11-04 Tdk株式会社 ショットキーバリアダイオード
JP6980116B2 (ja) * 2018-08-22 2021-12-15 三菱電機株式会社 酸化物半導体装置及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004521480A (ja) 2000-08-31 2004-07-15 ゼネラル セミコンダクター，インク． トレンチショットキー整流器
JP2009177028A (ja) 2008-01-25 2009-08-06 Toshiba Corp 半導体装置
CN103456627A (zh) 2013-08-28 2013-12-18 中航（重庆）微电子有限公司 一种复合型沟槽栅肖特基器件结构及其制造方法
WO2017111173A1 (ja) 2015-12-25 2017-06-29 出光興産株式会社 積層体
JP2021097168A (ja) 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード
JP2021097169A (ja) 2019-12-18 2021-06-24 Tdk株式会社 ショットキーバリアダイオード

Also Published As

Publication number Publication date
JP2023079551A (ja) 2023-06-08
DE112022005727T5 (de) 2024-09-19
TWI827222B (zh) 2023-12-21
TW202322404A (zh) 2023-06-01
WO2023095395A1 (ja) 2023-06-01
US20240313129A1 (en) 2024-09-19
CN118339662A (zh) 2024-07-12

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