TWI825959B - Manufacturing method of nitrogen-doped P-type single crystal silicon - Google Patents

Abstract

The embodiment of the invention discloses a method for manufacturing nitrogen-doped P-type single crystal silicon, which includes: putting highly nitrogen-doped single crystal and polycrystalline silicon into a crucible and heating the crystal pulling furnace to obtain a first silicon melt; Highly doped boron single crystal is added into the second silicon melt to obtain a second silicon melt; nitrogen-doped P-type single crystal silicon is drawn in the second silicon melt by Czochralski method.

Description

Manufacturing method of nitrogen-doped P-type single crystal silicon

The invention belongs to the field of semiconductor silicon wafer production, and in particular relates to a method for manufacturing nitrogen-doped P-type single crystal silicon.

With the global development of informatization, the size of devices in silicon chip applications continues to decrease. At the same time, with the gradual increase in device integration, the application fields of power devices are becoming wider and wider. The main characteristics of power devices are high voltage resistance and low substrate resistance. Resistance has a great impact on device performance, so the substrate is required to have high resistivity and small resistivity change. Due to the lattice mismatch between the doping elements and the silicon element, segregation occurs during the growth process of single crystal silicon. That is, the concentration of the doping elements crystallized in the single crystal silicon ingot is less than the concentration in the melt (raw material), causing the doping The concentration of impurity elements in the crucible continues to increase, so that the concentration of doping elements in the single crystal silicon ingot also continues to increase, resulting in a sharp increase in the concentration of doping elements at the end of the growth of the single crystal silicon ingot, and the carrier density increases with It increases significantly, the resistivity of the crystal ingot drops sharply, and the gradient of the axial resistivity of the crystal ingot is large. In recent years, as electronic components, especially power devices, require smaller and smaller resistivity change rate gradients, it has become very important to reduce the change in resistivity by changing the doping method. In addition, if heavy metal impurities are present on the above-mentioned silicon wafer, it will cause poor device characteristics. Therefore, reducing heavy metal impurities is also worthy of attention. As one of the technologies for reducing heavy metal impurities, gettering technology is becoming more and more important. Therefore, it is very advantageous to use low-resistivity P-type silicon wafers with high gettering effects. At the same time, as the degree of device integration gradually increases, the stress on the silicon wafer will increase significantly. Due to the low mechanical strength of the silicon material, it will affect the setting of processing and manufacturing step parameters, and the silicon wafer will be damaged during the product assembly process. Breakage is extremely easy to occur, which leads to an increase in the production cost of silicon wafers. Therefore, it is of great significance to improve the mechanical strength of silicon wafers.

Silicon wafers used to produce semiconductor electronic components such as the above-mentioned integrated circuits are mainly produced by slicing single crystal silicon rods drawn by the Czochralski method. The Czochralski method involves melting polycrystalline silicon in a crucible made of quartz to obtain a silicon melt, immersing a single crystal seed crystal into the silicon melt, and continuously lifting the seed crystal to move away from the surface of the silicon melt, whereby during the movement Single crystal silicon rods grow at the phase interface.

In the process of preparing P-type silicon wafers with high gettering effect and low resistivity through the above-mentioned Czochralski method, boron is usually selected as the dopant to control the resistivity, and void defects are removed by nitrogen doping to enhance the mechanical strength. However, during the process of boron doping and nitrogen doping, since the boron element as a boron dopant is easily volatile and forms refractory boron nitride (BN) with nitrogen, the resulting low resistivity P-type silicon wafer has a boron content of Low, or causing dislocations leading to crystal pulling failure. At the same time, the high melting temperatures of boron dopants and nitrogen dopants soften the quartz crucible, leading to uncontrollable oxygen precipitation and affecting the quality of the produced P-type silicon wafers with gettering effects and low resistivity.

In order to solve the above technical problems, embodiments of the present invention are expected to provide a method for manufacturing nitrogen-doped P-type single crystal silicon, which can overcome the problem of boron volatilization and avoid the generation of boron nitride, thereby manufacturing high-performance silicon with high productivity and low cost. High-quality nitrogen-doped P-type single crystal silicon with high gettering ability.

The technical solution of the present invention is implemented in this way, including: Put the highly doped nitrogen single crystal and polycrystalline silicon into the crucible and heat the crystal pulling furnace to obtain the first silicon melt; Adding highly doped boron single crystal to the first silicon melt to obtain a second silicon melt; Nitrogen-doped P-type single crystal silicon is drawn in the second silicon melt by Czochralski method.

Optionally, putting the highly doped nitrogen single crystal and polycrystalline silicon into the crucible and heating the crystal pulling furnace to obtain the first silicon melt includes: After quantitative calculation, the highly doped nitrogen single crystal is put into the crucible together with the polycrystalline silicon; Evacuate the crystal pulling furnace and introduce protective gas; Turn on the heater, raise the temperature of the furnace chamber and keep it warm for a period of time until the highly doped nitrogen single crystal and the polycrystalline silicon are completely melted to obtain the first silicon melt.

Optionally, the first silicon melt is a low nitrogen-doped silicon melt; Optionally, the protective gas is argon.

Optionally, adding highly doped boron single crystal to the first silicon melt to obtain the second silicon melt includes: Let the first silicon melt stand for a period of time; Add the highly doped boron single crystal to the first silicon melt after standing; The temperature of the furnace chamber is increased so that the highly doped boron single crystal is completely melted into the first silicon melt to obtain the second silicon melt.

Optionally, the second silicon melt is a low boron-doped silicon nitride melt.

Optionally, the step of pulling nitrogen-doped P-type single crystal silicon in the second silicon melt by Czochralski method includes: adjusting the furnace temperature; slowly placing a seed crystal into the second silicon melt, and after seeding, The crystal growth process is completed in the necking, shouldering, equal-diameter growth, and finishing stages; the nitrogen-doped P-type single crystal silicon is produced.

Optionally, the highly doped nitrogen single crystal and the highly doped boron single crystal are particles or powders.

In order to help the review committee understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is described in detail below in the form of embodiments with the accompanying drawings and attachments, and the drawings used therein are , its purpose is only for illustration and auxiliary description, and may not represent the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited to the actual implementation of the present invention. The scope shall be stated first.

In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical" The orientations or positional relationships indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description. , rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be construed as a limitation of the present invention.

In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.

In the embodiments of the present invention, unless otherwise expressly stipulated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a removable connection. Disassembly and connection, or integration; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements. For those with ordinary knowledge in the art, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

The technical solutions in the embodiments of the present invention will be described clearly and completely below.

The manufacturing method of nitrogen-doped P-type single crystal silicon of the present invention is based on the Czochralski crystallization method (also known as Czochralski method) and is combined with solid-phase doping to prepare nitrogen-doped P-type single crystal silicon. . That is to say, polycrystalline silicon and dopants are placed together in a crucible, heated to form a melt, and the melt is pulled to grow into single crystal silicon. In the present invention, highly doped nitrogen single crystal and polycrystalline silicon are put into a crucible and heated in a crystal pulling furnace to obtain a first silicon melt; a highly doped boron single crystal is added to the first silicon melt to obtain a second silicon melt ; Nitrogen-doped P-type single crystal silicon is drawn in the second silicon melt by Czochralski method.

In order to reduce the technical problem of resistivity change by changing the doping method, in related technologies, two or more trace elements are generally doped as impurities, which can significantly change the conductivity of a single crystal. The doped impurities are mainly trivalent or pentavalent elements. According to the differences in conductive properties caused by different dopants, they can generally be divided into N-type single-crystal silicon wafers and P-type single-crystal silicon wafers. When trace amounts of impurities are doped into a single crystal silicon wafer, the periodic potential field near the impurity atoms is disturbed and additional bound states are formed, creating additional impurity energy levels in the forbidden band. Impurities that can provide electron carriers are called donor impurities, and the corresponding energy level is called the donor energy level, which is located above the forbidden band and near the bottom of the conduction band. For example, when impurity atoms of pentavalent elements such as phosphorus, arsenic, and antimony are mixed into a silicon crystal with a tetravalent element, the impurity atom acts as a molecule in the crystal lattice, and four of its five valence electrons form covalent bonds with the surrounding silicon atoms. The extra electron is bound near the impurity atom, creating a hydrogen-like shallow energy level - the donor energy level. The energy required for electrons at the donor energy level to transition to the conduction band is much smaller than the energy required to excite them from the valence band to the conduction band. They are easily excited to the conduction band and become electron carriers. Therefore, for single crystal silicon doped with donor impurities The conductive carriers are mainly electrons excited into the conduction band, which belongs to the electronic conductivity type and is called N-type single crystal silicon wafer. Since there are always intrinsically excited electron-hole pairs in single-crystal silicon wafers, electrons are majority carriers and holes are minority carriers in N-type single-crystal silicon wafers.

Correspondingly, impurities that can provide hole carriers are called acceptor impurities, and the corresponding energy level is called the acceptor energy level, which is located below the forbidden band and near the top of the valence band. For example, when trace amounts of trivalent elements boron, aluminum, gallium and other impurity atoms are mixed into a silicon crystal, the impurity atom lacks an electron when it forms a covalent bond with the four surrounding silicon atoms, so there is a vacancy, and the energy state corresponding to this vacancy It is the acceptor energy level. Since the acceptor energy level is close to the top of the valence band, electrons in the valence band can easily be excited to the acceptor energy level to fill the vacancy, making the acceptor impurity atom a negative center. At the same time, a vacancy is left in the valence band due to the ionization of an electron, forming a free hole carrier. Therefore, the holes are the majority carriers at this time, and the impurity single crystal silicon wafer mainly conducts electricity through holes, that is, the hole conductivity type is called p-type single crystal silicon wafer. In P-type single crystal silicon wafers, holes are majority carriers and electrons are minority carriers. Minority carriers often play an important role in various effects of semiconductor devices. Its characteristic is that the more impurities are incorporated, the higher the concentration of electrons (holes) and the stronger the conductivity.

In practical applications, boron is often used as a dopant to control resistivity. Therefore, it is very advantageous to provide a P-type silicon wafer that has a crystal defect-free zone (Denuded Zone, DZ) extending from the front side toward the body and a containing body adjacent to the DZ and extending further toward the body. The area of Bulk Micro Defect (BMD), the front side here refers to the surface of the P-type silicon wafer that needs to form electronic components. The above-mentioned DZ is important because in order to form electronic components on P-type silicon wafers, it is required that there are no crystal defects in the formation area of the electronic components, otherwise it will lead to circuit breakage and other faults, causing the electronic components to be formed in The influence of crystal defects can be avoided in the DZ; and the function of the above-mentioned BMD is to produce an intrinsic getter (IG) effect on metal impurities, keeping the metal impurities in the P-type silicon wafer away from the DZ, thereby avoiding metal impurities. There are adverse effects such as an increase in leakage current caused by impurities and a decrease in the film quality of the gate oxide film.

However, in the process of producing the above-mentioned P-type silicon wafer with a BMD region, it is very advantageous to dope the P-type silicon wafer with nitrogen. When the P-type silicon wafer is doped with nitrogen, it can promote the formation of BMD with nitrogen as the core, so that the BMD reaches a certain density, allowing the BMD to effectively function as a metal getter source, and it can also The density distribution has a beneficial effect, such as making the BMD density more uniformly distributed in the radial direction of the P-type silicon wafer, such as making the BMD density higher in the area adjacent to the DZ and gradually decreasing toward the body of the silicon wafer. Doping nitrogen impurities in P-type silicon wafers produced by the CZ method can also reduce the size of Voids, eliminating annealing at high temperatures. Nitrogen can also improve dislocations and improve the mechanical properties of P-type silicon wafers. In addition, when nitrogen impurities are doped into P-type silicon wafers drawn by CZ method, nitrogen and oxygen will interact to form a nitrogen-oxygen complex with shallow thermal donor properties, further improving the electrical properties of P-type silicon wafers.

When preparing nitrogen-doped P-type single crystal silicon, in related technologies, nitrogen dopants, boron dopants and polycrystalline silicon raw materials are usually added to a quartz crucible at the same time for heating. After the raw materials are melted, a nitrogen- and boron-doped material is obtained. The silicon melt is then pulled into nitrogen-doped P-type single crystal silicon by CZ method. In this preparation process, solid-state materials are usually used in this field to add dopants to accurately control the concentration of dopants, such as Si ₃ N ₄ raw materials and boron elements as dopants. In the process of preparing nitrogen-doped P-type single crystal silicon, it is necessary to heat the polycrystalline silicon, Si ₃ N ₄ raw material and boron elemental substance in the quartz crucible to a molten state to obtain a silicon melt doped with nitrogen and boron. Polycrystalline silicon can be completely melted at 1450°C. However, the Si ₃ N ₄ raw material and boron single crystal need to be kept at 1900°C and 2100°C for a period of time respectively before they can be completely melted. Incompletely melted dopants will cause bit defects in the crystal rod. Wrong defects lead to crystal pulling failure.

However, keeping the furnace temperature at a high temperature for a long time will cause the quartz crucible to soften. The reaction product between the molten Si and the crucible raw material _SiO2 is gaseous SiO. After escaping, it reacts with the graphite product placed in the crucible to form CO gas, which is easy to enter. In the silicon melt, carbon and oxygen are introduced into the silicon to increase the oxygen content in the silicon melt. Excessive oxygen atoms are the main cause of defects. Oxygen precipitation of excessive oxygen atoms in the device startup area can cause breakdown or leakage. During the annealing process, the generation of oxygen precipitation reduces the device yield. At the same time, the boron element as a dopant volatilizes in a huge amount, especially in the high-temperature crystal pulling furnace, where the boron dopant further volatilizes. In addition, boron is easily oxidized. At an ambient temperature of 1600°C, boron and nitrogen easily form the refractory boron nitride (BN). Boron nitride has good high temperature resistance and stable chemical properties and does not react with silicon at high temperatures. , does not wet with silicon or adhere to silicon. When boron nitride appears in the silicon melt, it is easy to cause dislocation defects during the crystal pulling process and lead to crystal pulling failure.

The present invention mainly consists in replacing silicon nitride as a nitrogen source with a highly doped nitrogen single crystal, and replacing elemental boron as a boron source with a highly doped boron single crystal in the process of preparing nitrogen-doped P-type single crystal silicon. It solves the technical problems of high temperature in the furnace chamber and long heating time. In addition, changing the melting order of boron dopants and nitrogen dopants inhibits the formation of boron nitride (BN).

A method for manufacturing nitrogen-doped P-type single crystal silicon according to an embodiment of the present invention, as shown in Figure 1, the method includes the following steps: S101: Put the highly doped nitrogen single crystal and polycrystalline silicon into the crucible and heat the crystal pulling furnace to obtain the first silicon melt; S102: Add highly doped boron single crystal to the first silicon melt to obtain a second silicon melt; S103: Pull nitrogen-doped P-type single crystal silicon in the second silicon melt by Czochralski method.

Due to the use of highly doped nitrogen single crystal dopants and highly doped boron single crystal dopants, nitrogen and boron elements can also be doped into the crystal rod at a lower temperature (the melting temperature of polycrystalline silicon) without the need to The temperature in the furnace chamber increased too high, causing the quartz crucible used to carry the crystal pulling material to uncontrollably precipitate a large amount of oxygen. In addition, the order of adding the highly nitrogen-doped single crystal dopant and the highly doped boron single crystal dopant was adjusted. The low-nitrogen-doped silicon melt was first obtained through the highly nitrogen-doped single crystal dopant and polycrystalline silicon raw materials. A silicon melt, and then adding a highly doped boron single crystal to the first silicon melt to obtain a second silicon melt that is a low boron-doped nitride silicon melt, and finally drawing it in the second silicon melt by the Czochralski method Nitrogen-doped P-type single crystal silicon avoids the appearance of boron nitride (BN) and prevents crystal pulling failure.

According to the manufacturing method of nitrogen-doped P-type single crystal silicon according to one embodiment of the present invention, as shown in Figure 2, putting highly doped nitrogen single crystal and polycrystalline silicon into a crucible and heating the crystal pulling furnace to obtain the first silicon melt includes the following steps : S201: After quantitative calculation, the highly doped nitrogen single crystal is put into the crucible together with the polycrystalline silicon. First, put the highly doped nitrogen single crystal particles or powder and polycrystalline silicon raw materials into the quartz crucible in advance, because the nitrogen content of the dopant added here directly determines the nitrogen content in the produced nitrogen-doped P-type single crystal silicon. , so it is only necessary to determine the quality of the required highly doped nitrogen single crystal based on the nitrogen concentration of the target nitrogen-doped P-type single crystal silicon. An appropriate amount of nitrogen doping can pin dislocations to enhance mechanical strength, inhibit gap generation, increase or decrease the integrity of the gate oxide layer (GOI) of integrated circuit devices, and promote oxygen precipitation, thereby enhancing the internal absorption of single crystals. Miscellaneous abilities.

S202: Evacuate the crystal pulling furnace and introduce protective gas. During the crystal pulling process, in order to avoid oxidation of silicon, it must be carried out in a vacuum environment and under the action of protective gas. Pour protective gas (high-purity argon) into the crystal pulling furnace and inject it from the top of the furnace. Turn on the vacuum pump at the bottom to extract the gas so that the vacuum value in the furnace is maintained at a dynamic balance. The gas flow in the furnace penetrates the crystal rod from top to bottom. The growth area can instantly take away the silicon oxide and impurity volatiles produced at high temperatures. Optionally, the vacuum value in the furnace is maintained stable by controlling the inlet air flow and maintaining the evacuation efficiency of the vacuum pump.

S203: Turn on the heater, raise the temperature of the furnace chamber and keep it warm for a period of time until the highly doped nitrogen single crystal and the polycrystalline silicon are completely melted to obtain the first silicon melt. During this process, the temperature of the furnace chamber is raised to the melting temperature of polycrystalline silicon (about 1450-1550°C) through the heater and kept at this temperature for a period of time to fully melt the polycrystalline silicon. Since highly doped nitrogen single crystal is used instead of nitrogen The raw material of silicon is used as a nitrogen source, so after being kept at this temperature for a period of time, the highly nitrogen-doped single crystal can be fully melted, so that the nitrogen element is fully integrated into the silicon melt, and the first silicon is obtained as a low nitrogen-doped silicon melt. Melt. At this temperature, the quartz crucible does not have problems such as softening or cracking, and the precipitation of elements is within an acceptable range, without causing technical problems such as excessive oxygen content. Since the highly doped nitrogen single crystal used as the nitrogen source has a high nitrogen content and a low oxygen content, it can effectively prevent the dopant from bringing excess oxygen to the first silicon melt.

According to the manufacturing method of nitrogen-doped P-type single crystal silicon according to one embodiment of the present invention, as shown in Figure 3, adding highly doped boron single crystal to the first silicon melt to obtain the second silicon melt includes the following steps: S301: Let the first silicon melt stand for a period of time. After confirming that the highly doped nitrogen single crystal dopant and polycrystalline silicon raw material in the first silicon melt are completely melted, reduce the heater power and let it sit for a period of time to solidify the surface of the first silicon melt to prevent subsequent additions. Other dopants will cause the first silicon melt to splash, thus avoiding safety accidents.

S302: Add the highly doped boron single crystal to the first silicon melt after standing. Add highly doped boron single crystal particles or powder to the first silicon melt that has been allowed to stand for a period of time. The boron content of the dopant added here directly determines the nitrogen-doped P-type single crystal silicon produced. Therefore, it is only necessary to determine the quality of the highly doped nitrogen single crystal based on the nitrogen concentration of the target nitrogen-doped P-type single crystal silicon.

S303: Increase the furnace temperature to completely melt the highly doped boron single crystal into the first silicon melt to obtain the second silicon melt. In this step, the surface of the first silicon melt may solidify after standing. The temperature of the furnace stone is raised or maintained at the melting temperature of silicon (approximately 1450-1550°C) through a heater, and maintained at this temperature for a period of time. Time allows the surface-solidified first silicon melt and the doped highly doped boron single crystal to fully melt, and the boron element is fully integrated into the first silicon melt to obtain a second silicon melt that is a low boron-doped nitride silicon melt. . At this temperature, the quartz crucible does not have problems such as softening or cracking, and the precipitation of elements is within an acceptable range, without causing technical problems such as excessive oxygen content. Since the highly doped boron single crystal used as the boron source has high boron content and low oxygen content, it can effectively prevent the dopant from bringing excess oxygen to the first silicon melt.

According to a manufacturing method of nitrogen-doped P-type single crystal silicon according to one embodiment of the present invention, the method of drawing nitrogen-doped P-type single crystal silicon by Czochralski method includes: adjusting the temperature of the furnace chamber; slowly lowering the seed crystal into the second silicon melt In the furnace, the seed crystal in the furnace completes the crystal growth process through seeding, necking, shoulder expansion, equal diameter growth, and the finishing stage; nitrogen-doped P-type single crystal silicon is produced.

According to the manufacturing method of nitrogen-doped P-type single crystal silicon of the present invention, since it uses highly doped nitrogen single crystal and highly doped boron single crystal as dopants for preparing nitrogen-doped P-type single crystal silicon, it can be used in relatively The low furnace temperature allows nitrogen atoms and boron atoms to be completely integrated into the silicon melt, so that the quartz crucible does not precipitate excess oxygen atoms, improving the control of oxygen concentration and improving BMD control. In addition, through the different melting sequences of highly doped nitrogen single crystal and highly doped boron single crystal, the production of boron nitride (BN) in the process of preparing nitrogen-doped P-type single crystal silicon is avoided, preventing difficulties due to Molten impurities cause crystal pulling failure to occur.

It should be noted that the technical solutions recorded in the embodiments of the present invention can be combined arbitrarily as long as there is no conflict. The above are only preferred embodiments of the present invention and are not intended to limit the implementation scope of the present invention. If the present invention is modified or equivalently substituted without departing from the spirit and scope of the present invention, the protection shall be covered by the patent scope of the present invention. within the range.

S101-S103: Steps S201-S303: Steps S301-S103: Steps

Figure 1 is a schematic diagram of a manufacturing method of nitrogen-doped P-type single crystal silicon according to an embodiment of the present invention; Figure 2 is a schematic diagram of a manufacturing method of nitrogen-doped P-type single crystal silicon according to an embodiment of the present invention, in which highly doped nitrogen single crystal and polycrystalline silicon are put into a crucible and heated in a crystal pulling furnace to obtain a first silicon melt; 3 is a schematic diagram of adding a highly doped boron single crystal to the first silicon melt to obtain a second silicon melt in a manufacturing method of nitrogen-doped P-type single crystal silicon according to an embodiment of the present invention.

S101-S103: Steps

Claims (8)

A method for manufacturing nitrogen-doped P-type single crystal silicon, which includes: putting highly nitrogen-doped single crystal and polycrystalline silicon into a crucible and heating the crystal pulling furnace to obtain a first silicon melt; wherein, the heating temperature of the first silicon melt is obtained is 1450-1550°C; add highly doped boron single crystal to the first silicon melt to obtain a second silicon melt; pull nitrogen-doped P-type single crystal silicon in the second silicon melt by Czochralski method; Wherein, the heating temperature to obtain the second silicon melt is 1450-1550°C. The manufacturing method of nitrogen-doped P-type single crystal silicon as described in claim 1, wherein putting the highly doped nitrogen single crystal and polycrystalline silicon into a crucible and heating the crystal pulling furnace to obtain the first silicon melt includes: After quantitative calculation, the heterogeneous nitrogen single crystal is put into the crucible together with the polycrystalline silicon; the crystal pulling furnace is evacuated and a protective gas is introduced; the heater is turned on, the temperature of the furnace chamber is raised and the temperature is kept for a period of time until the highly doped nitrogen single crystal and the polycrystalline silicon are The polycrystalline silicon is completely melted to obtain the first silicon melt. The manufacturing method of nitrogen-doped P-type single crystal silicon according to claim 2, wherein the first silicon melt is a low nitrogen-doped silicon melt. The method for manufacturing nitrogen-doped P-type single crystal silicon according to claim 2, wherein the protective gas is argon. The manufacturing method of nitrogen-doped P-type single crystal silicon as described in claim 1, wherein adding highly doped boron single crystal to the first silicon melt to obtain the second silicon melt includes: melting the first silicon melt Let the body stand for a period of time; add the highly doped boron single crystal to the first silicon melt after standing; The temperature of the furnace chamber is increased so that the highly doped boron single crystal is completely melted into the first silicon melt to obtain the second silicon melt. The manufacturing method of nitrogen-doped P-type single crystal silicon according to claim 5, wherein the second silicon melt is a low boron-doped nitride silicon melt. The manufacturing method of nitrogen-doped P-type single crystal silicon as described in claim 1, wherein the step of drawing nitrogen-doped P-type single crystal silicon in the second silicon melt by Czochralski method includes: adjusting the temperature of the furnace chamber; The seed crystal is slowly placed in the second silicon melt, and the crystal growth process is completed through seeding, necking, shoulder release, equal diameter growth, and finishing stages; the nitrogen-doped P-type single crystal silicon is produced. The manufacturing method of nitrogen-doped P-type single crystal silicon according to claim 1, wherein the highly doped nitrogen single crystal and the highly doped boron single crystal are particles or powders.