TWI825080B - 半導體晶片的製造方法 - Google Patents
半導體晶片的製造方法 Download PDFInfo
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- TWI825080B TWI825080B TW108109997A TW108109997A TWI825080B TW I825080 B TWI825080 B TW I825080B TW 108109997 A TW108109997 A TW 108109997A TW 108109997 A TW108109997 A TW 108109997A TW I825080 B TWI825080 B TW I825080B
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- semiconductor wafer
- protective film
- thermosetting resin
- resin film
- bump
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
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- 239000000314 lubricant Substances 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- AYLRODJJLADBOB-QMMMGPOBSA-N methyl (2s)-2,6-diisocyanatohexanoate Chemical compound COC(=O)[C@@H](N=C=O)CCCCN=C=O AYLRODJJLADBOB-QMMMGPOBSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
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- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
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- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 238000010943 off-gassing Methods 0.000 description 1
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- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001997 phenyl group Polymers [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018069682 | 2018-03-30 | ||
| JP2018-069682 | 2018-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202004874A TW202004874A (zh) | 2020-01-16 |
| TWI825080B true TWI825080B (zh) | 2023-12-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108109997A TWI825080B (zh) | 2018-03-30 | 2019-03-22 | 半導體晶片的製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7267259B2 (ja) |
| KR (1) | KR20200138154A (ja) |
| CN (1) | CN111656491A (ja) |
| TW (1) | TWI825080B (ja) |
| WO (1) | WO2019189173A1 (ja) |
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| JPWO2021171898A1 (ja) * | 2020-02-27 | 2021-09-02 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201302362A (zh) * | 2011-06-15 | 2013-01-16 | Applied Materials Inc | 用於使用雷射劃線和電漿蝕刻之元件裁切的原位沉積光罩層 |
| TW201517171A (zh) * | 2013-10-22 | 2015-05-01 | Applied Materials Inc | 無遮罩混合式雷射劃線及電漿蝕刻晶圓切割製程 |
| TW201715623A (zh) * | 2015-05-29 | 2017-05-01 | Lintec Corp | 半導體裝置之製造方法 |
| JP2017103330A (ja) * | 2015-12-01 | 2017-06-08 | 株式会社ディスコ | ウエーハの分割方法 |
| CN107591321A (zh) * | 2016-07-07 | 2018-01-16 | 松下知识产权经营株式会社 | 元件芯片的制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4013753B2 (ja) | 2002-12-11 | 2007-11-28 | 松下電器産業株式会社 | 半導体ウェハの切断方法 |
| JP2006253402A (ja) * | 2005-03-10 | 2006-09-21 | Nec Electronics Corp | 半導体装置の製造方法 |
| JP2012069747A (ja) * | 2010-09-24 | 2012-04-05 | Teramikros Inc | 半導体装置およびその製造方法 |
| WO2013021644A1 (ja) * | 2011-08-09 | 2013-02-14 | 三井化学株式会社 | 半導体装置の製造方法およびその方法に用いられる半導体ウエハ表面保護用フィルム |
| JP6347657B2 (ja) * | 2014-04-22 | 2018-06-27 | デクセリアルズ株式会社 | 保護テープ、及びこれを用いた半導体装置の製造方法 |
-
2019
- 2019-03-22 TW TW108109997A patent/TWI825080B/zh active
- 2019-03-26 CN CN201980010027.XA patent/CN111656491A/zh active Pending
- 2019-03-26 KR KR1020207016400A patent/KR20200138154A/ko not_active Application Discontinuation
- 2019-03-26 JP JP2020510907A patent/JP7267259B2/ja active Active
- 2019-03-26 WO PCT/JP2019/012842 patent/WO2019189173A1/ja active Application Filing
Patent Citations (5)
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|---|---|---|---|---|
| TW201302362A (zh) * | 2011-06-15 | 2013-01-16 | Applied Materials Inc | 用於使用雷射劃線和電漿蝕刻之元件裁切的原位沉積光罩層 |
| TW201517171A (zh) * | 2013-10-22 | 2015-05-01 | Applied Materials Inc | 無遮罩混合式雷射劃線及電漿蝕刻晶圓切割製程 |
| TW201715623A (zh) * | 2015-05-29 | 2017-05-01 | Lintec Corp | 半導體裝置之製造方法 |
| JP2017103330A (ja) * | 2015-12-01 | 2017-06-08 | 株式会社ディスコ | ウエーハの分割方法 |
| CN107591321A (zh) * | 2016-07-07 | 2018-01-16 | 松下知识产权经营株式会社 | 元件芯片的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019189173A1 (ja) | 2019-10-03 |
| CN111656491A (zh) | 2020-09-11 |
| KR20200138154A (ko) | 2020-12-09 |
| JPWO2019189173A1 (ja) | 2021-03-25 |
| JP7267259B2 (ja) | 2023-05-01 |
| TW202004874A (zh) | 2020-01-16 |
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