TWI823970B - 基板液處理裝置及基板液處理方法 - Google Patents
基板液處理裝置及基板液處理方法 Download PDFInfo
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Abstract
[課題] 提供在無電解鍍敷處理中,在基板面內提升鍍敷膜之均勻性的技術。
[解決手段] 具備:基板保持部,其係吸附保持基板並使其旋轉;加熱部,其係從外部加熱基板保持部;鍍敷液供給部,其係對被保持於基板保持部而旋轉之基板供給鍍敷液;及控制部,其係控制基板保持部和加熱部和鍍敷液供給部之動作,控制部係以在透過基板保持部保持基板之前,透過加熱部將基板保持部加熱成50℃以上之方式進行控制。
Description
本揭示係關於基板液處理裝置及基板液處理方法。
專利文獻1揭示使用由鍍敷液構成之處理液對基板(晶圓)進行無電解鍍敷處理之基板液處理裝置。
[先前技術文獻]
[專利文獻]
[專利文獻1] 日本特開2018-3097號公報
[發明所欲解決之課題]
本揭示係提供在無電解鍍敷處理中,在基板面內提升鍍敷膜之均勻性的技術。
[用以解決課題之手段]
依據本揭示的一態樣所成的基板液處理裝置具備:基板保持部,其係吸附保持基板並使其旋轉;加熱部,其係從外部加熱基板保持部;鍍敷液供給部,其係對被保持於基板保持部而旋轉之基板供給鍍敷液;及控制部,其係控制基板保持部和加熱部和鍍敷液供給部之動作。控制部係以在透過基板保持部保持基板之前,透過加熱部將基板保持部加熱成50℃以上之方式進行控制。
[發明之效果]
若藉由本揭示,則可以在無電解鍍敷處理中,在基板面內提升膜之均勻性。
以下,參照圖面針對本發明之一實施型態進行說明。
首先,參照圖1,說明與本發明之實施型態有關之基板液處理裝置之構成。圖1為作為與本揭示之實施型態有關之基板液處理裝置之一例的鍍敷處理裝置之構成的概略俯視圖。在此,鍍敷處理裝置係對基板W供給鍍敷液L1(處理液)而對基板W進行鍍敷處理(液處理)的裝置。
如圖1所示般,與本揭示之實施型態有關之鍍敷處理裝置1具備鍍敷處理單元2、控制鍍敷處理單元2之動作的控制部3。
鍍敷處理單元2對基板W(晶圓)進行各種處理。針對鍍敷處理單元2進行的各種處理於後述。
控制部3為例如電腦,具有動作控制部和記憶部。動作控制部係由例如CPU(Central Processing Unit)構成,藉由讀出被記憶於記憶部之程式實行,控制鍍敷處理單元2之動作。記憶部係由例如RAM(Random Access Memory)、ROM(Read Only Memory)、硬碟等之記憶裝置構成,記憶控制在鍍敷處理單元2被實行之各種處理的程式。
另外,程式即使為被記錄於能夠藉由電腦讀取之記錄媒體31者亦可,即使為從其記錄媒體31被安裝於記憶部者亦可。作為藉由電腦可讀取之記憶媒體31,可舉出例如有硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。在記錄媒體31中,記錄有例如藉由用以控制鍍敷處理裝置1之動作的電腦而被實行時,電腦控制鍍敷處理裝置1而實行後述之鍍敷處理方法的程式。
參照圖1,說明鍍敷處理單元2之構成。圖1為表示鍍敷處理單元2之構成的概略剖面圖。
鍍敷處理單元2具備搬入搬出站21,和與搬入搬出站21鄰接設置的處理站22。
搬入搬出站21包含載置部211、與載置部211鄰接設置的搬運部212。
在載置部211被載置以水平狀態收容複數片之基板W的複數搬運容器(以下,稱為「載體C」)。
搬運部212包含搬運機構213和收授部214。搬運機構213具備保持基板W之保持機構,被構成為能夠進行朝水平向及垂直方向移動以及以垂直軸為中心的旋轉。
處理站22具備鍍敷處理部5。在本實施型態中,雖然處理站22所具有的鍍敷處理部5的數量為兩個以上,但是即使為1個亦可。鍍敷處理部5被配列在於特定方向延伸之搬運路徑221之兩側(與後述之搬運機構222之移動方向正交之方向中的兩側)。
在搬運路徑221設置有搬運機構222。搬運機構222包含保持基板W之保持機構,被構成為能夠進行朝水平向及垂直方向移動以及以垂直軸為中心的旋轉。
在鍍敷處理單元2中,搬入搬出站21之搬運機構213係在載體C和收授部214之間進行基板W之搬運。具體而言,搬運機構213係從被載置於載置部211的載體C取出基板W,且將取出的基板W載置於收授部214。再者,搬運機構213藉由處理站22之搬運機構222取出被載置於收授部214的基板W,且收容至載置部211之載體C。
在鍍敷處理單元2中,處理站22之搬運機構222係在收授部214和鍍敷處理部5之間、鍍敷處理部5和收授部214之間進行基板W的搬運。具體而言,搬運機構222係取出被載置於收授部214之基板W,且將取出之基板W搬入至鍍敷處理部5。再者,搬運機構222係從鍍敷處理部5取出基板W,且將取出的基板W載置於收授部214。
接著,參照圖2,說明鍍敷處理部5之構成。圖2為表示鍍敷處理部5之構成的概略剖面圖。
鍍敷處理部5被構成為進行包含無電解鍍敷處理的液處理。該鍍敷處理部5具備腔室51、被配置在腔室51內,將基板W保持水平的基板保持部52、被保持於基板保持部52之基板W之上面供給鍍敷液L1(處理液)之鍍敷液供給部53(處理液供給部)。
在本實施型態中,基板保持部52具有真空吸附基板W之下面(背面)的夾具構件521。該夾具構件521成為所謂的真空夾具型。
在基板保持部52經由旋轉軸桿522連結旋轉馬達523(旋轉驅動部)。若旋轉馬達523被驅動,則基板保持部52與基板W一起旋轉。旋轉馬達523被支持於被固定於腔室51之基座524。另外,在基板保持部52之內部無設置加熱器等之加熱源。
鍍敷液供給部53具有對被保持於基板保持部52之基板W吐出(供給)鍍敷液L1之鍍敷液噴嘴531(處理液噴嘴),和對鍍敷液噴嘴531供給鍍敷液L1之鍍敷液供給源532。其中鍍敷液供給源532被構成為經由鍍敷液配管533對鍍敷液噴嘴531供給被加熱或者被調溫至特定溫度的鍍敷液L1。來自鍍敷液噴嘴531之鍍敷液L1之吐出時之溫度例如55℃以上75℃以下,更佳為60℃以上70℃以下。鍍敷液噴嘴531被保持於噴嘴臂56,被構成為能夠移動。
鍍敷液L1係自觸媒型(還原型)無電解鍍敷用的鍍敷液。鍍敷液L1含有例如金屬離子和還原劑。鍍敷液L1所含的金屬離子例如鈷(Co)離子、鎳(Ni)離子、鎢(W)離子、銅(Cu)離子、鈀(Pd)離子、金(Au)離子、釕(Ru)離子等。再者,鍍敷液L1所含的還原劑為次磷酸、二甲胺硼烷、乙醛酸等。鍍敷液L1即使含有添加劑等亦可。作為藉由使用鍍敷液L1之鍍敷處理所形成的鍍敷膜,可舉出例如CoWB、CoB、CoWP、CoWBP、NiWB、NiB、NiWP、NiWBP、Cu、Pd、Ru等。另外,鍍敷膜即使由單層形成亦可,即使跨兩層以上形成亦可。在鍍敷膜由兩層構造形成之情況,即使從基底金屬層側依序具有例如CoWB/CoB、Pd/CoB等之層構成亦可。
鍍敷處理部5進一步具備對被保持於基板保持部52之基板W之上面供給前洗淨液L2之前洗淨液供給部54,和對該基板W之上面供給沖洗液L3之沖洗液供給部55。
前洗淨液供給部54係對被保持於基板保持部52而旋轉之基板W供給前洗淨液L2,對基板W之基底金屬層進行前洗淨處理者。該前洗淨液供給部54具有對被保持於基板保持部52之基板W吐出前洗淨液L2之前洗淨液噴嘴541,和對前洗淨液噴嘴541供給前洗淨液L2之前洗淨液供給源542。其中前洗淨液供給源542被構成為如後述般將被加熱或調溫至特定溫度之前洗淨液L2,經由前洗淨液配管543而供給至前洗淨液噴嘴541。前洗淨液噴嘴541被保持於噴嘴臂56,成為能夠與鍍敷液噴嘴531一起移動。
作為前洗淨液L2,使用二羧酸或三羧酸。其中,作為二羧酸,可以使用例如例如蘋果酸、琥珀酸、丙二酸、草酸、戊二酸、己二酸、酒石酸等之有機酸。再者,作為三羧酸,可以使用例如檸檬酸等之有機酸。
至少在基板W上之前洗淨液L2之溫度被加熱或者調溫至較常溫更高的溫度。具體而言,前洗淨液L2之溫度為40℃以上,以50℃以上80℃以下為佳,以成為60℃以上70℃以下為更佳。如此這般,藉由將前洗淨液L2加熱或者調溫至40℃以上,可以提高前洗淨液L2之反應性,效率佳地在短時間除去被形成在基板W之基底金屬層的氧化皮膜等。
前洗淨液L2係藉由前洗淨液供給部54之加熱機構544被加熱。在此情況,加熱機構544係被設置在前洗淨液配管543之熱交換器,加熱在前洗淨液配管543內流動的前洗淨液L2者。但是,不限定於此,加熱機構544係即使被設置在前洗淨液供給源542之液槽,加熱被填充於液槽內之前洗淨液L2者亦可。在此情況,可以將在從前洗淨液噴嘴541被供給至基板W之時點的前洗淨液L2之溫度設成40℃以上。或是,即使前洗淨液L2係在常溫之狀態從前洗淨液噴嘴541被供給至基板W,之後,藉由被設置在基板W之附近的加熱部(例如,後述加熱器63),被加熱成基板W上之前洗淨液L2之溫度成為40℃以上亦可。
再者,以前洗淨液L2之溫度接近於在後工程所使用的鍍敷液L1之溫度為佳,具體而言,以設為鍍敷液L1之溫度的±5℃以內為佳。例如,在鍍敷液L1之吐出時之溫度為55℃以上75℃以下之情況,以將前洗淨液L2之溫度設為50℃以上80℃以下為佳。如此這般,藉由使前洗淨液L2之溫度接近於鍍敷液L1之溫度,於進行鍍敷處理之前,可以事先藉由前洗淨液L2對基板W進行預備加熱,可以順暢地開始鍍敷處理。
沖洗液供給部55具有對被保持於基板保持部52之基板W吐出沖洗液L3之沖洗液噴嘴551,和對沖洗液噴嘴551供給沖洗液L3之沖洗液供給源552。其中沖洗液噴嘴551被保持於噴嘴臂56,成為能夠與鍍敷液噴嘴531及前洗淨液噴嘴541一起移動。再者,沖洗液供給源552被構成為經由沖洗液配管553將沖洗液L3供給至沖洗液噴嘴551。作為沖洗液L3,可以使用例如純水等。
在保持上述鍍敷液噴嘴531、前洗淨液噴嘴541及沖洗液噴嘴551之噴嘴臂56連結無圖示之噴嘴移動機構。該噴嘴移動機構使噴嘴臂56在水平方向及上下方向移動。更具體而言,藉由噴嘴移動機構,噴嘴臂56成為能夠在對基板W吐出處理液(鍍敷液L1、前洗淨液L2或沖洗液L3)之吐出位置,和從吐出位置退避之退避位置之間移動。其中吐出位置若為能夠對基板W之上面之中的任意位置供給處理液,則不特別限定。例如,以設為能夠對基板W之中心供給處理液之位置為佳。在對基板W供給鍍敷液L1之情況,供給前洗淨液L2之情況,供給沖洗液L3之情況,噴嘴臂56之吐出位置即使不同亦可。退避位置係腔室51內之中,在從上方觀看之情況,不與基板W重疊之位置,亦即從吐出位置分離的位置。在噴嘴臂56被定位在退避位置之情況,避免移動的蓋體6干擾到噴嘴臂56。
在基板保持部52之周圍設置杯體571。該杯體571從上方觀看之情況被形成環狀,於基板W之旋轉時,承接從基板W飛散的處理液,引導至後述的排液管581。在杯體571之外周側,設置環境遮斷蓋572,抑制基板W之周圍的環境擴散至腔室51內。該環境遮斷蓋572以在上下方向延伸之方式被形成圓筒狀,上端開口。成為後述的蓋體6能夠從上方插入至環境遮斷蓋572內。
在本實施型態中,被保持在基板保持部52之基板W藉由蓋體6被覆蓋。該蓋體6具有頂棚部61和從頂棚部61朝下方延伸之側壁部62。
頂棚部61包含第1頂板611,和被設置在第1頂板611上之第2頂板612。在第1頂板611和第2頂板612之間,中介存在加熱器63(加熱部)。第1頂板611及第2頂板612被構成為密封加熱器63,加熱器63不與鍍敷液L1等之處理液接觸。更具體而言,在第1頂板611和第2頂板612之間且加熱器63之外周側,設置有密封環613,藉由該密封環613密封加熱器63。第1頂板611及第2頂板612具有相對於鍍敷液L1等之處理液之耐腐蝕性為佳,例如即使藉由鋁合金而被形成亦可。並且為了提高耐腐蝕性,即使第1頂板611、第2頂板612及側壁部62以鐵氟龍(註冊商標)塗佈亦可。
在蓋體6經由蓋體臂71而連結蓋體移動機構7。蓋體移動機構7係使蓋體6在水平方向及上下方向移動。更具體而言,蓋體移動機構7具有使蓋體6在水平方向移動之旋轉馬達72,和使蓋體6在上下方向移動的汽缸73(間隔調節部)。其中,旋轉馬達72被安裝於支持板74上,該支持板74被設置成對汽缸73能夠在上下方向移動。作為汽缸73之替代品,即使使用包含馬達和滾珠螺桿之致動器(無圖示)亦可。
蓋體移動機構7之旋轉馬達72係使蓋體6在被配置在被保持於基板保持部52之基板W之上方的上方位置,和從上方位置退避之退避位置之間移動。其中上方位置係以比較大的間隔與被保持於基板保持部52之基板W對向之位置,且從上方觀看之情況與基板W重疊的位置。退避位置係腔室51內之中,從上方觀看之情況,不與基板W重疊之位置。在蓋體6被定位在退避位置之情況,避免移動的噴嘴臂56干擾到蓋體6。旋轉馬達72之旋轉軸線在上下方向延伸,成為蓋體6在上方位置和退避位置之間,能夠在水平方向旋轉移動。
蓋體移動機構7之汽缸73係使蓋體6在上下方向移動,調節被供給鍍敷液L1之基板W和頂棚部61之第1頂板611的間隔。更具體而言,汽缸73係使蓋體6定位在下方位置(在圖2中以實線表示之位置),和上方位置(在圖2中以二點鏈線表示之位置)。
在本實施型態中,被構成為在加熱器63被驅動,而蓋體6被定位在上述下方位置之情況,基板保持部52或基板W上之鍍敷液L1被加熱。
在蓋體6之內側,藉由惰性氣體供給部66被供給惰性氣體(例如,氮(N2
)氣)。該惰性氣體供給部66具有對蓋體6之內側吐出惰性氣體之氣體噴嘴661,和對氣體噴嘴661供給惰性氣體之惰性氣體供給源662。其中,氣體噴嘴661被設置在蓋體6之頂棚部61,蓋體6覆蓋基板W之狀態朝向基板W吐出惰性氣體。
蓋體6之頂棚部61及側壁部62藉由蓋體罩64被覆蓋。該蓋體罩64係經由支持部65被載置於蓋體6之第2頂板612上。即是,在第2頂板612上,設置有從第2頂板612之上面朝上方突出之複數支持部65,在該支持部65載置蓋體罩64。蓋體罩64成為能夠與蓋體6一起在水平方向及上下方向移動。再者,蓋體罩64為了抑制蓋體6內之熱釋放至周圍,以具有較頂棚部61及側壁部62高的隔熱性為佳。例如,蓋體罩64係以藉由樹脂材料形成為佳,其樹脂材料具有耐熱性為更佳。
如此這般,在本實施型態中,於具備加熱器63之蓋體6和蓋體罩64被一體性地設置,且被配置在下方位置之情況,覆蓋基板保持部52或基板W之蓋單元10係藉由該些蓋體6及蓋體罩64而構成。
在腔室51之上部,設置對蓋體6之周圍供給潔淨空氣(氣體)之風扇過濾器單元59(氣體供給部)。風扇過濾器單元59係對腔室51內(尤其,環境遮斷蓋572內)供給空氣,被供給之空氣朝向排氣管81流動。在蓋體6之周圍,形成該空氣向下流動的向下流,從鍍敷液L1等之處理液氣化的氣體藉由該向下流朝向排氣管81流動。如此一來,防止從處理液氣化的氣體上升而擴散至腔室51內之情形。
從上述風扇過濾器單元59被供給之氣體成為藉由排氣機構8被排出。
具有上述構成之鍍敷處理裝置1之鍍敷處理部5進一步藉由控制部3控制基板保持部52和加熱器63(加熱部)和鍍敷液供給部53之動作。控制部3係以在透過基板保持部52吸附保持基板W之前,透過加熱器63(加熱部)將基板保持部52加熱成50℃以上之方式進行控制。例如,在鍍敷液L1之吐出時之溫度為55℃以上75℃以下之情況,以將基板保持部52之溫度設為50℃以上80℃以下為佳。
在上述中,雖然以被設置在基板保持部52之上方的加熱器63(加熱部)加熱基板保持部52,但是不限定於此,即使以被設置在基板保持部52之下方之例如環狀加熱器530(加熱部)加熱基板保持部52亦可。
另外,在以環狀加熱器530(加熱部)加熱基板保持部52之情況,具備加熱器63之蓋體6即使為移動至被配置在保持於基板保持部52之基板W之上方的上方位置之狀態,或者,移動至從上方位置退避的退避位置之狀態亦可。依此,可以省略將具備加熱器63之蓋體6移動至加熱基板保持部52之下方位置的時間。
再者,不限定於上述,即使使具備加熱器63之蓋體6移動至加熱基板保持部52之下方位置,與環狀加熱器530(加熱部)同時加熱基板保持部52亦可。依此,可以急速地加熱基板保持部52。再者,即使在鍍敷處理中,亦可以加熱基板保持部52。
以往,藉由透過基板保持部52吸附保持基板W時的基板保持部52之吸熱,基板W上之鍍敷液L1之溫度下降,有鍍敷膜之生長受到阻礙之情況。依此,被形成在基板保持部52之區域之基板W上之鍍敷膜變薄,在基板W之面內鍍敷膜之膜厚成為不均勻。
在本實施型態中,藉由控制部3,以在透過基板保持部52吸附保持基板W之前,透過加熱器63(加熱部)將基板保持部52加熱成50℃以上之方式進行控制。例如,在鍍敷液L1之吐出時之溫度為55℃以上75℃以下之情況,以將基板保持部52之溫度設為50℃以上80℃以下為佳。依此,基板保持部52之吸熱被抑制,可以在基板W之面內提升鍍敷膜之均勻性。
接著,針對從如此之構成所構成之本實施型態之作用,使用圖3進行說明。在此,針對作為基板液處理方法之一例,針對使用鍍敷處理裝置1之鍍敷處理方法予以說明。
藉由鍍敷處理裝置1被實施之鍍敷處理方法包含對基板W的鍍敷處理。鍍敷處理係藉由鍍敷處理部5被實施。以下所示之鍍敷處理部5之動作藉由控制部3被控制。另外,在進行下述處理之期間,從風扇過濾器單元59對腔室51內供給潔淨的空氣,朝向排氣管81流動。
[基板保持加熱工程]
首先,基板保持部52藉由具備有加熱器63(加熱部)之蓋體6被覆蓋,加熱基板保持部52(步驟S1)。在此情況,首先蓋體移動機構7之旋轉馬達72被驅動,被定位在退避位置之蓋體6在水平方向旋轉移動,被定位在上方位置。接著,蓋體移動機構7之汽缸73被驅動,被定位在上方位置之蓋體6下降。依此,基板保持部52藉由蓋體6被覆蓋,加熱器63(加熱部)被驅動,基板保持部52被加熱。在基板保持加熱工程之基板保持部52之加熱溫度被加熱成50℃以上。例如,在鍍敷液L1之吐出時之溫度為55℃以上75℃以下之情況,以將基板保持部52之溫度設為50℃以上80℃以下為佳。
[基板保持工程]
接著,基板W被搬入至鍍敷處理部5,被搬入之基板W被保持於基板保持部55(步驟S2)。在此,基板W之下面被真空吸附,基板W水平地被保持於基板保持部52。
[前洗淨處理工程]
接著,水平地被保持於基板保持部52之基板W被前洗淨處理(步驟S3)。在此情況,首先旋轉馬達523被驅動而基板W以特定次數旋轉。接著,被定位在退避位置之噴嘴臂56移動至吐出位置。接著,前洗淨液L2從前洗淨液噴嘴541被供給至旋轉的基板W,基板W之表面被洗淨。依此,被形成在基板W之表面的氧化皮膜或附著物等從基板W被除去。被供給至基板W之前洗淨液L2被排出至排液管581。
[基板沖洗處理工程]
接著,被進行洗淨處理的基板W被進行沖洗處理(步驟S4)。在此情況,沖洗液L3從沖洗液噴嘴551被供給至旋轉的基板W,基板W之表面被進行沖洗處理。依此,殘存在基板W上之前洗淨液L2被沖洗。被供給至基板W之沖洗液L3被排出至排液管581。另外,沖洗液L3之溫度不限定於常溫,即使藉由被設置在沖洗液供給部55之加熱機構(無圖示),加熱至與加熱鍍敷液L1之溫度同等以上亦可。
[鍍敷液供給工程]
接著,作為鍍敷液供給工程,鍍敷液L1被供給且盛裝在被進行沖洗處理的基板W上(步驟S5)。在此情況,首先使基板W之旋轉數較沖洗處理時之旋轉數更降低。例如,即使將基板W之旋轉數設為50~150rpm亦可。依此,可以使被形成在基板W上之後述鍍敷膜均勻化。另外,為了增大鍍敷液L1之盛裝量,即使使基板W之旋轉停止亦可。
接著,鍍敷液L1從鍍敷液噴嘴531被吐出至基板W之上面。被吐出之鍍敷液L1藉由表面張力滯留在基板W之上面,鍍敷液L1被盛裝在基板W之上面,而形成鍍敷液L1之層(所謂的溢液)。鍍敷液L1之一部分從基板W之上面流出,從排液管581被排出。特定量之鍍敷液L1從鍍敷液噴嘴531被吐出之後,停止鍍敷液L1之吐出。之後,被定位在吐出位置的噴嘴臂56被定位在退避位置。
[鍍敷液加熱處理工程]
接著,作為鍍敷液加熱處理工程,被盛裝在基板W上之鍍敷液L1被加熱。該鍍敷液加熱處理工程具有基板W被蓋體6覆蓋之工程(步驟S6),和供給惰性氣體之工程(步驟S7),和加熱鍍敷液L1之加熱工程(步驟S8)。另外,即使在鍍敷液加熱處理工程中,基板W之旋轉數以與鍍敷液供給工程相同之速度(或是旋轉停止)被維持為佳。
[以蓋體覆蓋基板之工程]
首先,基板W藉由蓋體6被覆蓋(步驟S6)。在此情況,首先蓋體移動機構7之旋轉馬達72被驅動,被定位在退避位置之蓋體6在水平方向旋轉移動,被定位在上方位置。接著,蓋體移動機構7之汽缸73被驅動,被定位在上方位置之蓋體6下降。依此,基板W藉由蓋體6被覆蓋,基板W之周圍之空間被封閉化。
[惰性氣體供給工程]
基板W藉由蓋體6被覆蓋之後,惰性氣體從被設置在蓋體6之頂棚部61之氣體噴嘴661被吐出至蓋體6之內側(步驟S7)。依此,蓋體6之內側之空氣被置換成惰性氣體,基板W之周圍成為低氧環境。惰性氣體係吐出特定時間,之後,停止惰性體之吐出。
[加熱工程]
接著,被盛裝在基板W上之鍍敷液L1被加熱(步驟S8)。在加熱工程中,加熱器63被驅動,被盛裝在基板W上之鍍敷液L1被加熱。在加熱工程中的鍍敷液L1之加熱係進行被設定成鍍敷液L1之溫度上升至特定溫度的特定時間。鍍敷液L1之溫度若上升至成分析出的溫度,則在基板W之上面析出鍍敷液L1之成分,開始形成鍍敷膜。
[蓋體退避工程]
若加熱工程結束,則蓋體移動機構7被驅動,蓋體6被定位在退避位置(步驟S9)。在此情況,首先,蓋體移動機構7之汽缸73被驅動,蓋體6上升,被定位在上方位置。之後,蓋體移動機構7之旋轉馬達72被驅動,被定位在上方位置之蓋體6在水平方向旋轉移動,被定位在退避位置。
如此一來,基板W之鍍敷液加熱處理工程(步驟S6~S9)結束。
[基板沖洗處理工程]
接著,被鍍敷液加熱處理後的基板W被進行沖洗處理(步驟S10)。在此情況,首先使基板W之旋轉數較鍍敷處理時之旋轉數更增加。例如,以與鍍敷處理前之基板沖洗處理工程(步驟S4)相同的旋轉數使基板W旋轉。接著,被定位在退避位置之沖洗液噴嘴551朝吐出位置移動。接著,沖洗液L3從沖洗液噴嘴551被供給至旋轉的基板W,基板W之表面被洗淨。依此,殘存在基板W上之鍍敷液L1被沖洗。
[基板乾燥處理工程]
接著,被進行沖洗處理的基板W被進行乾燥處理(步驟S11)。在此情況,例如使基板W之旋轉數較基板沖洗處理工程(步驟S10)之旋轉數增加,以高速使基板W旋轉。依此,殘存在基板W上之沖洗液L3被甩掉而除去,取得在基板W上形成鍍敷膜的基板W。在此情況,即使對基板W噴出氮(N2
)氣體等之惰性氣體,促進基板W之乾燥亦可。再者,在基板沖洗處理工程(步驟S10)中,即使對基板W供給例如由IPA(異丙醇)等之有機系溶劑所構成之處理液亦可。此時,即使將殘留在基板W上之沖洗液L3取入至IPA等之處理液中,並且從基板W上甩掉該處理液使其蒸發,乾燥基板W亦可。
[基板取出工程]
之後,基板W從基板保持部52被取出,而從鍍敷處理部5被搬出(步驟S12)。
如此一來,使用鍍敷處理裝置1之基板W之一連串之鍍敷處理方法(步驟S1~步驟S12)結束。
如此這般,若藉由本實施型態,則在一面水平地吸附保持基板W並使其旋轉,一面對基板W供給鍍敷液L1,且施予鍍敷處理的時候,從外部加熱吸附保持基板W之基板保持部52。基板保持部52之加熱係在基板保持部52保持基板W之前被進行,將基板保持部52之溫度設為50度以上。
在上述中,雖然以被設置在基板保持部52之上方的加熱器63(加熱部)加熱基板保持部52,但是不限定於此,即使以被設置在基板保持部52之下方之例如環狀加熱器530(加熱部)加熱基板保持部52亦可。
另外,即使在以環狀加熱器530(加熱部)加熱基板保持部52之情況,具備加熱器63之蓋體6即使為移動至被配置在保持於基板保持部52之基板W之上方的上方位置之狀態,或者,從上方位置退避的退避位置亦可。
在此情況,可以省略將具備加熱器63之蓋體6移動至加熱基板保持部52之下方位置的時間。
再者,不限定於上述,即使使具備加熱器63之蓋體6移動至加熱基板保持部52之下方位置,與環狀加熱器530(加熱部)同時加熱基板保持部52亦可。依此,可以急速地加熱基板保持部52。再者,即使在鍍敷處理中,亦可以加熱基板保持部52。
以往,藉由透過基板保持部52吸附保持基板W時的基板保持部52之吸熱,基板W上之鍍敷液L1之溫度下降,有鍍敷膜之生長受到阻礙之情況。依此,被形成在基板保持部52之區域之基板W上之鍍敷膜變薄,在基板W之面內鍍敷膜之膜厚成為不均勻。
在本實施型態中,藉由控制部3,以在透過基板保持部52吸附保持基板W之前,透過加熱器63(加熱部)將基板保持部52加熱成50℃以上之方式進行控制。例如,在鍍敷液L1之吐出時之溫度為55℃以上75℃以下之情況,以將基板保持部52之溫度設為50℃以上80℃以下為佳。依此,基板保持部52之吸熱被抑制,可以在基板W之面內提升鍍敷膜之均勻性。
本實施型態不限定於僅上述實施型態,在實施階段中在不脫離其主旨之範圍可以使構成要素變形而予以具體化。再者,藉由適當組合上述實施型態及變形例所揭示之複數的構成要素,可以形成各種實施型態。即使從實施型態及變形例所示之全構成要素刪除幾個構成要素亦可。並且,即使適當組合跨不同實施型態的構成要素亦可。
例如,即使加熱器530(加熱部)為燈管亦可。再者,在以具備加熱器63之蓋體6加熱基板保持部52之情況,加熱器63和基板保持部52之距離及加熱時間係可任意變更,使得基板保持部52成為期待溫度。
1:鍍敷處理裝置
2:鍍敷處理單元
3:控制部
10:蓋單元
31:記錄媒體
5:鍍敷處理部
51:腔室
52:基板保持部
53:鍍敷液供給部
54:前洗淨液供給部
63:加熱器
530:加熱器
541:前洗淨液噴嘴
542:前洗淨液供給源
544:加熱機構
55:沖洗液供給部
56:噴嘴臂
[圖1] 為表示鍍敷處理裝置之構成的概略俯視圖。
[圖2] 為表示圖1所示之鍍敷處理部之構成的概略剖面圖。
[圖3] 為表示圖1之鍍敷處理裝置中之基板之鍍敷處理的流程圖。
5:鍍敷處理部
6:蓋體
7:蓋體移動機構
8:排氣機構
10:蓋單元
51:腔室
52:基板保持部
53:鍍敷液供給部
54:前洗淨液供給部
55:沖洗液供給部
56:噴嘴臂
59:風扇過濾器單元
61:頂棚部
62:側壁部
63:加熱器
64:蓋體罩
65:支持部
66:惰性氣體供給部
71:蓋體臂
72:環境遮斷蓋
73:汽缸
74:支持板
81:排液管
521:夾具構件
522:旋轉軸桿
523:旋轉馬達
524:基座
530:加熱器
531:鍍敷液噴嘴
532:鍍敷液供給源
533:鍍敷液配管
541:前洗淨液噴嘴
542:前洗淨液供給源
543:前洗淨液配管
544:加熱機構
551:沖洗液噴嘴
552:沖洗液供給源
553:沖洗液配管
571:杯體
572:環境遮斷蓋
581:排液管
611:側壁部
612:第2頂板
613:密封環
661:氣體噴嘴
662:惰性氣體供給源
L1:鍍敷液
L2:前洗淨液
L3:沖洗液
W:基板
Claims (9)
- 一種基板液處理裝置,具備:基板保持部,其係吸附保持基板並使其旋轉;加熱部,其係從外部加熱上述基板保持部;前處理液供給部,其係對被保持於上述基板保持部而旋轉之上述基板供給前處理液;鍍敷液供給部,其係對被保持於上述基板保持部而旋轉之上述基板供給鍍敷液;及控制部,其係控制上述基板保持部和上述加熱部和前處理液供給部和上述鍍敷液供給部之動作,上述控制部係以在透過上述基板保持部保持上述基板之前,透過上述加熱部將上述基板保持部加熱成50℃以上之方式進行控制,上述前處理液之溫度為40℃以上,上述基板保持部係吸附保持上述基板之表面小於上述基板之背面。
- 如請求項1記載之基板液處理裝置,其中上述加熱部被設置在較上述基板保持部更上方。
- 如請求項2記載之基板液處理裝置,其中上述加熱部具備加熱器,且為能夠配置在覆蓋上述基板保持部或上述基板之下方位置的蓋單元。
- 如請求項1記載之基板液處理裝置,其中上述加熱部被設置在上述基板保持部之下方。
- 如請求項4記載之基板液處理裝置,其中上述加熱部在較上述基板保持部之外周更內側設置加熱器或燈管。
- 如請求項1至5中之任一項記載之基板液處理裝置,其中上述加熱部之溫度為80℃以下。
- 一種基板液處理方法,具備:基板保持加熱工程,其係從外部加熱吸附保持基板之基板保持部;基板保持工程,其係透過上述基板保持部保持基板;前處理工程,其係一面水平地保持上述基板並使其旋轉,一面對上述基板上供給前處理液;鍍敷處理工程,其係一面水平地保持上述基板並使其旋轉,一面對上述基板上供給鍍敷液;上述基板保持加熱工程係在透過上述基板保持部吸附保持上述基板之前,將上述基板保持部加熱至50℃以上,上述前處理液之溫度為40℃以上,上述基板保持部係吸附保持上述基板之表面小於上述 基板之背面。
- 如請求項7記載之基板液處理方法,其中上述基板保持加熱工程之加熱部被設置在較上述基板保持部更上方位置及下方位置之至少一方。
- 如請求項8記載之基板液處理方法,其中上述加熱部之溫度為80℃以下。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200402825A (en) * | 2002-05-17 | 2004-02-16 | Ebara Corp | Substrate treating device and substrate treating method |
US20050181226A1 (en) * | 2004-01-26 | 2005-08-18 | Applied Materials, Inc. | Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber |
TW201804027A (zh) * | 2016-04-07 | 2018-02-01 | 東京威力科創股份有限公司 | 鍍敷處理裝置、鍍敷處理方法及記憶媒體 |
TW201812095A (zh) * | 2016-07-01 | 2018-04-01 | 日商東京威力科創股份有限公司 | 基板液處理裝置、基板液處理方法及記錄媒體 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6107608A (en) * | 1997-03-24 | 2000-08-22 | Micron Technology, Inc. | Temperature controlled spin chuck |
US6716330B2 (en) * | 2000-10-26 | 2004-04-06 | Ebara Corporation | Electroless plating apparatus and method |
JP3883802B2 (ja) | 2000-10-26 | 2007-02-21 | 株式会社荏原製作所 | 無電解めっき装置 |
JP2004015028A (ja) | 2002-06-11 | 2004-01-15 | Ebara Corp | 基板処理方法及び半導体装置 |
JP2005136225A (ja) * | 2003-10-30 | 2005-05-26 | Ebara Corp | 基板処理装置及び方法 |
US7829152B2 (en) * | 2006-10-05 | 2010-11-09 | Lam Research Corporation | Electroless plating method and apparatus |
US7598176B2 (en) * | 2004-09-23 | 2009-10-06 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method for photoresist stripping and treatment of low-k dielectric material |
JP5788349B2 (ja) | 2012-03-19 | 2015-09-30 | 東京エレクトロン株式会社 | めっき処理装置、めっき処理方法および記憶媒体 |
JP6363249B2 (ja) | 2017-04-17 | 2018-07-25 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
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US20050181226A1 (en) * | 2004-01-26 | 2005-08-18 | Applied Materials, Inc. | Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber |
TW201804027A (zh) * | 2016-04-07 | 2018-02-01 | 東京威力科創股份有限公司 | 鍍敷處理裝置、鍍敷處理方法及記憶媒體 |
TW201812095A (zh) * | 2016-07-01 | 2018-04-01 | 日商東京威力科創股份有限公司 | 基板液處理裝置、基板液處理方法及記錄媒體 |
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