TWI823618B - 電子封裝件 - Google Patents
電子封裝件 Download PDFInfo
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- TWI823618B TWI823618B TW111139102A TW111139102A TWI823618B TW I823618 B TWI823618 B TW I823618B TW 111139102 A TW111139102 A TW 111139102A TW 111139102 A TW111139102 A TW 111139102A TW I823618 B TWI823618 B TW I823618B
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- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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Abstract
一種電子封裝件,係於將線路結構藉由支撐結構堆疊於一具有佈線層之承載結構上,且該線路結構與該承載結構之上下兩側均配置電子元件,並以包覆層包覆該些電子元件及該支撐結構,使該電子封裝件能有效提升封裝密度,以符合終端產品需具有多功能之需求。
Description
本發明係有關一種半導體封裝結構,尤指一種雙側封裝之電子封裝件。
隨著半導體封裝技術的演進,半導體裝置(Semiconductor device)已開發出不同的封裝型態,而為提升電性功能及節省封裝空間,遂開發出不同的立體封裝技術,例如,扇出式封裝堆疊(Fan Out Package on package,簡稱FO PoP)等,以配合各種晶片上大幅增加之輸入/出埠數量,進而將不同功能之積體電路整合於單一封裝結構,此種封裝方式能發揮系統封裝(SiP)異質整合特性,可將不同功用之電子元件,例如:記憶體、中央處理器、繪圖處理器、影像應用處理器等,藉由堆疊設計達到系統的整合,適合應用於各種輕薄型電子產品。
圖1係為習知半導體封裝件1的剖面示意圖。如圖1所示,該半導體封裝件1係包括:一配置有半導體晶片11之封裝基板10、一藉由導電柱13堆疊於該封裝基板10上之線路結構14以及包覆該半導體晶片11之封裝膠體15,以於該封裝基板10底側佈設複數銲球17,且於該線路結構14上藉由複數導電元件18接置一封裝模組9。
惟,習知半導體封裝件1中,該半導體晶片11之配置空間受限於該導電柱13之高度,導致該封裝基板10上無法配置不同規格之電子元件。
再者,雖可增加該導電柱13之高度,以配置高度較高之半導體晶片11,但該導電柱13之寬度亦隨之增加,因而會增加該導電柱13於該封裝基板10上之佈設面積,致使該封裝基板10上難以增設其它電子元件。
因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。
鑑於上述習知技術之種種缺失,本發明係提供一種電子封裝件,係包括:具有佈線層之承載結構,係定義有相對之第一側與第二側;複數第一電子元件,係分別設於該承載結構之第一側與第二側上並電性連接該佈線層;支撐結構,係設於該承載結構之第一側上且電性連接該佈線層;線路結構,係具有相對之第一表面與第二表面,以令該線路結構以其第一表面藉由該支撐結構疊設於該承載結構之第一側上,並使該支撐結構電性連接該線路結構,其中,該線路結構之版面寬度係小於該承載結構之版面寬度,使該承載結構之第一側之上方形成容置空間;複數第二電子元件,係分別設於該線路結構之第一表面與第二表面上並電性連接該線路結構;以及包覆層,係形成於該承載結構之第一側與第二側及該線路結構之第一表面與第二表面上以包覆該複數第一電子元件、該複數第二電子元件及該支撐結構。
前述之電子封裝件中,該承載結構之第一側上之容置空間中係配置功能元件,其電性連接該佈線層,且該功能元件相對於該承載結構第一側之高度係大於該支撐結構相對於該承載結構第一側之高度。
前述之電子封裝件中,該包覆層於對應該線路結構之第二表面上係形成有複數開孔,以令該線路結構之第二表面上之部分區域外露於該複數開孔,供結合複數導電元件。
前述之電子封裝件中,該線路結構復可藉由至少一導線電性連接該承載結構之佈線層。
前述之電子封裝件中,該支撐結構復設於該承載結構之第二側上以疊設一電子模組。
前述之電子封裝件中,該包覆層係於該容置空間處形成階梯部,且該階梯部之上表面係低於該包覆層對應於該線路結構處之上表面,並於該階梯部之上表面形成複數開孔,以令該承載結構之部分該佈線層外露於該複數開孔。例如,該複數開孔中可藉由複數導電元件接合一封裝模組,使該封裝模組電性連接該佈線層。
前述之電子封裝件中,該包覆層係形成於該承載結構之第一側之局部表面上,使該包覆層未覆蓋該容置空間並於該容置空間處呈鏤空區。
前述之電子封裝件中,復包括形成於該包覆層上之屏蔽結構。
前述之電子封裝件中,該支撐結構係為銲錫球、導電柱或銅核心球。
前述之電子封裝件中,該支撐結構係為線路板,其藉由導電體結合至該承載結構之第一側之佈線層與該線路結構上。
由上可知,本發明之電子封裝件中,主要藉由該線路結構之版面寬度小於該承載結構之版面寬度,使該承載結構之第一側之上方形成容置空間,供配置其它功能元件,故相較於習知技術,本發明之電子元件之配置空間不會受
限於該支撐結構之高度,使該承載結構之第一側上能依需求配置不同規格之電子元件。
再者,由於該電子元件之配置空間不會受限於該支撐結構之高度,因而能將該支撐結構之寬度朝微小化設計,以減少該支撐結構於該承載結構之第一側上之佈設面積,使該承載結構之第一側上能依需求增設其它電子元件。
又,藉由該包覆層採用雙面模壓之設計,以於該承載結構之第一側與第二側上能配置複數第一電子元件、及於該線路結構之第一表面與第二表面上能配置複數第二電子元件,故本發明之電子封裝件能有效提升封裝密度,以符合終端產品需具有多功能之需求,且藉由該包覆層相對該承載結構與該線路結構之四面模壓,以提高該電子封裝件之整體結構強度,進而改善多層堆疊結構的翹曲問題。
1:半導體封裝件
10,40,50:封裝基板
11,41,51:半導體晶片
13:導電柱
14,24,34:線路結構
15,42,52:封裝膠體
17,27,37:銲球
18,28,48:導電元件
2,2b,2c,3,4,4c,5,6:電子封裝件
20:承載結構
20a:第一側
20b:第二側
20c,25c:側面
200:佈線層
21a,21b:第一電子元件
210,220,310:導電凸塊
22a,22b:第二電子元件
23,33,61,62,63:支撐結構
24a:第一表面
24b:第二表面
25,45:包覆層
25a:上表面
25b:下表面
250,450:開孔
26,66:功能元件
29,39,660:導線
3a:電子模組
30:佈線結構
30a:外側
30b:內側
31a,31b:第三電子元件
35:封裝層
4a,5a,9:封裝模組
500,611:導電體
59:屏蔽結構
610:導電跡線
630:銅塊體
631:銲錫材
D,R,R1,R2:版面寬度
h1,h2:高度
P:階梯部
t:寬度
S:容置空間
圖1係為習知半導體封裝件之剖面示意圖。
圖2A係為本發明之電子封裝件之第一實施例之剖視示意圖。
圖2B及圖2C係為本發明之電子封裝件之第二實施例之不同態樣之剖視示意圖。
圖3係為本發明之電子封裝件之第三實施例之剖視示意圖。
圖4A至圖4B係為本發明之電子封裝件之第四實施例之剖視示意圖。
圖4C係為圖4B之另一態樣之剖視示意圖。
圖5A、圖5B及圖5C係為本發明之電子封裝件之第五實施例之不同態樣之剖視示意圖。
圖6A、圖6B及圖6C係為本發明之電子封裝件之第六實施例之不同態樣之剖視示意圖。
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。
圖2A係為本發明之電子封裝件2之第一實施例之剖視示意圖。如圖2A所示,所述之電子封裝件2係包括:一具有佈線層200之承載結構20、複數第一電子元件21a,21b、複數如銲錫球規格之支撐結構23、一線路結構24、複數第二電子元件22a,22b以及一包覆層25。
所述之承載結構20係定義有相對之第一側20a與第二側20b,且該第一側20a係作為支撐側,而該第二側20b係作為植球側,以於該第二側20b之部分佈線層200上結合複數銲球27。
於本實施例中,該承載結構20係例如具有核心層之封裝基板(substrate)或無核心層(coreless)式封裝基板,其具有一絕緣基體與結合該絕緣基體之佈線層200,該佈線層200例如為扇出(fan out)型重佈佈線層(redistribution layer,簡稱RDL),其中,該承載結構20內部亦佈設有佈線層(圖略)以導通該第一側20a與第二側20b上之佈線層200。例如,形成該些佈線層200之材質係例如為銅,而形成該絕緣基體之材質係例如為聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材。
所述之複數第一電子元件21a,21b係分別設於該承載結構20之第一側20a與第二側20b上並電性連接該佈線層200。
於本實施例中,該第一電子元件21a,21b係為主動元件、被動元件或其二者組合等,其中,該主動元件係例如半導體晶片,且該被動元件係例如電阻、電容及電感。例如,若該第一電子元件21a,21b為半導體晶片時,可藉由複數如銲錫材料之導電凸塊210以覆晶方式設於該佈線層200上並電性連接該佈線層200;或者,該第一電子元件可藉由複數銲線(圖略)以打線方式電性連接該佈線層200;亦或,該第一電子元件可直接電性連接該佈線層200。然而,有關該第一電子元件電性連接該承載結構之方式繁多,並不限於上述。
所述之線路結構24係具有相對之第一表面24a與第二表面24b,以令該線路結構24以其第一表面24a藉由該些支撐結構23設於該承載結構20之第一側20a上,並使該些支撐結構23電性連接該線路結構24與該佈線層200。
於本實施例中,該線路結構24係例如具有核心層之封裝基板(substrate)或無核心層(coreless)式封裝基板,其具有一絕緣基體與結合該絕緣基體之線路層(圖略),該線路層例如為扇出(fan out)型重佈線路層(redistribution layer,簡稱RDL),其中,該線路結構24內部亦佈設有線路層(圖略)以導通該第一表面24a與第二表面24b上之線路層。例如,形成該些線路層之材質係例如為銅,而形成該絕緣基體之材質係例如為聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材。
再者,該線路結構24之版面寬度R係小於該承載結構20之版面寬度D,使該承載結構20之第一側20a之上方形成容置空間S,供配置其它功能元件26。例如,該功能元件26可為被動元件,其電性連接該佈線層200,且該功能元件26相對於該承載結構20第一側20a之高度h1係大於該支撐結構23相對於該承載結構20第一側20a之高度h2,但該功能元件26不會受限於該線路結構24而碰撞該線路結構24。應可理解地,該功能元件26相對於該承載結構20第一側20a之高度甚至可高於該線路結構24相對於該承載結構20第一側20a之高度,且該功能元件26仍不會受限於該線路結構24而碰撞該線路結構24。
所述之複數第二電子元件22a,22b係分別設於該線路結構24之第一表面24a與第二表面24b上並電性連接該線路結構24。
於本實施例中,該第二電子元件22a,22b係為主動元件、被動元件或其二者組合等,其中,該主動元件係例如半導體晶片,且該被動元件係例如電阻、電容及電感。例如,當該第二電子元件22a,22b係為半導體晶片時,其可藉由複數如銲錫材料之導電凸塊220採用覆晶方式設於該線路結構24之第一表面24a與第二表面24b之線路層上並電性連接該線路層;或者,該第二電子元件可藉由複數銲線(圖略)以打線方式電性連接該線路層。亦或,該第二電子元件可直接接觸該線路層然而,有關該第二電子元件電性連接該線路結構之方式繁多,並不限於上述。
所述之包覆層25係形成於該承載結構20之第一側20a與第二側20b及該線路結構24之第一表面24a與第二表面24b上,以包覆該些第一電子元件21a,21b、功能元件26、該些第二電子元件22a,22b及該些支撐結構23。
於本實施例中,該包覆層25係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound)。例如,該包覆層25之製程可選擇液態封膠(liquid compound)、噴塗(injection)、壓合(lamination)或模壓(compression molding)等方式形成於該承載結構20與該線路結構24上。
再者,該包覆層25之製作係可採用一次封裝作業之方式包覆該些第一電子元件21a,21b、該些第二電子元件22a,22b及該些支撐結構23。或者,可採用多次封裝作業之方式,先包覆該些第一電子元件21a,21b、該線路結構24之第一表面24a上之第二電子元件22a及該些支撐結構23,再包覆該線路結構24之第二表面24b上之第二電子元件22b。
又,該線路結構24之第二表面24b上之第二電子元件22b並未外露於該包覆層25之上表面25a,但該承載結構20之第二側20b上之銲球27與第一電子元件21b係外露於該包覆層25之下表面25b。例如,該承載結構20之第二側20b上之第一電子元件21b之外表面係齊平於該包覆層25之下表面25b,且該些銲球27係凸伸出於該包覆層25之下表面25b。應可理解地,該線路結構24之第二表面24b上之第二電子元件22b亦可依需求外露於該包覆層25之上表面25a,例如,該線路結構24之第二表面24b上之第二電子元件22b之表面係齊平於該包覆層25之上表面25a,並無特別限制。
另外,該包覆層25於對應該線路結構24之第二表面24b上係形成有複數開孔250,以令該線路結構24之第二表面24b上之部分區域(如部分線路層)外露於該些開孔250,供結合複數如銲錫材料之導電元件28,以外接其它元件,且該導電元件28電性連接該線路結構24之線路層。如圖5C所示,可將一封裝模組5a藉由如銲錫材料之導電體500接合該導電元件28,使該封裝模組5a堆疊於該包覆層25上。
所述之封裝模組5a係包含一用以藉由該導電體500接合並電性連接該導電元件28之封裝基板50、電性連接該封裝基板50之半導體晶片51以及包覆該半導體晶片51之封裝膠體52。
因此,本發明之電子封裝件2,主要藉由該線路結構24之版面寬度R小於該承載結構20之版面寬度D,使該承載結構20之第一側20a之上方形成容置空間S,供配置其它功能元件26,故相較於習知技術,本發明之電子元件(如第一電子元件21a、第二電子元件22a與功能元件26)之配置空間不會受
限於該支撐結構23之高度,使該承載結構20之第一側20a上能依需求配置不同規格之電子元件(如第一電子元件21a、第二電子元件22a與功能元件26)。
再者,由於該電子元件(如第一電子元件21a、第二電子元件22a與功能元件26)之配置空間不會受限於該支撐結構23之高度,因而能將該支撐結構23之寬度t朝微小化設計,以減少該支撐結構23於該承載結構20之第一側20a上之佈設面積,使該承載結構20之第一側20a上能依需求增設其它電子元件(如第一電子元件21a或功能元件26)。
又,藉由該包覆層25採用雙面模壓(或雙面組裝)之設計,以於該承載結構20之第一側20a與第二側20b上能配置複數第一電子元件21a,21b及於該線路結構24之第一表面24a與第二表面24b上能配置複數第二電子元件22a,22b,故本發明之電子封裝件2能有效提升封裝密度,以符合終端產品需具有多功能之需求,且藉由該包覆層25相對該承載結構20與該線路結構24之四面模壓,以提高該電子封裝件2之整體結構强度,進而改善多層堆疊結構的翹曲(warpage)問題。
圖2B及圖2C係為本發明之電子封裝件2b,2c之第二實施例之剖視示意圖。本實施例與第一實施例之差異在於增設導線29,其它結構大致相同,故不再贅述相同處。
如圖2B所示,線路結構34復可藉由至少一導線29電性連接承載結構20之佈線層200。
於本實施例中,該導線29係為如金線之銲線,且該線路結構34之版面寬度R1係小於第一實施例之線路結構24之版面寬度R,以利於進行配
置該導線29之打線作業,並使該包覆層25包覆該線路結構34之整體及該導線29。
再者,如圖2C所示,包覆層25之上表面25a上可依需求未形成開孔250。
因此,本實施例之電子封裝件2b,2c係藉由導線29取代部分支撐結構23以增加該承載結構20與線路結構24之間的電性連接路徑,且因該支撐結構23之數量縮減,使該支撐結構23能以較大間距(pitch)之規格作配置。
圖3係為本發明之電子封裝件3之第三實施例之剖視示意圖。本實施例與上述實施例之差異在於增設電子模組3a,其它結構大致相同,故不再贅述相同處。
如圖3所示,該承載結構20之第二側20b上可藉由複數支撐結構33堆疊設置一電子模組3a,且該電子模組3a係包含一佈線結構30、複數第三電子元件31a,31b以及一封裝層35。
所述之佈線結構30係例如具有核心層之封裝基板(substrate)或無核心層(coreless)式封裝基板,其內側30b可藉由該支撐結構33電性連接該承載結構20之佈線層200,而外側30a可藉由如金線之導線39電性連接該佈線層200。
於本實施例中,該佈線結構30之版面寬度R2係小於該承載結構20之版面寬度D,以利於進行配置該導線39之打線作業。
再者,該承載結構20之第一側20a與第二側20b上方並未配置其它功能元件26,且該承載結構20之第二側20b所接置之佈線結構30之外側30a係作為植球側,並將該複數銲球37配置於該佈線結構30之外側30a。
所述之複數第三電子元件31a,31b係分別設於該佈線結構30之內側30b與外側30a上並電性連接該佈線結構30。
於本實施例中,該第三電子元件31a,31b係為主動元件、被動元件或其二者組合等,其中,該主動元件係例如半導體晶片,且該被動元件係例如電阻、電容及電感。例如,若該第三電子元件31a,31b為半導體晶片時,其電極墊(圖略)可藉由複數如銲錫材料之導電凸塊310以覆晶方式設於該佈線結構30上並電性連接該佈線結構30;或者,該第三電子元件之電極墊可藉由複數銲線(圖略)以打線方式電性連接該佈線結構30;亦或,該第三電子元件之電極墊可直接電性連接該佈線結構。然而,有關該第三電子元件電性連接該佈線結構之方式繁多,並不限於上述。
所述之封裝層35係包覆該些第三電子元件31a,31b、該承載結構20之第二側20b上之第一電子元件21b、該些支撐結構33及導線39。
於本實施例中,該封裝層35係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、如環氧樹脂(epoxy)之封裝膠體或封裝材(molding compound)。例如,該封裝層35之製程可選擇液態封膠(liquid compound)、噴塗(injection)、壓合(lamination)或模壓(compression molding)等方式形成於該承載結構20與該佈線結構30上。應可理解地,該封裝層35與該包覆層25之材質可相同或相異。
再者,該佈線結構30之外側30a上之第三電子元件31a與銲球37係外露於該封裝層35。例如,該第三電子元件31a之外露表面係齊平於該封裝層35之表面,且該些銲球37係凸伸出於該封裝層35。應可理解地,該第三電子元件31a亦可依需求未外露於該封裝層35,並無特別限制。
因此,本實施例之電子封裝件3係藉由該承載結構20之第二側20b堆疊一佈線結構30,且該佈線結構30之版面寬度R2亦小於該承載結構20之版面寬度D,以利於增加該承載結構20之第二側20b之佈設空間,並於該佈線結構30之外側30a藉由導線39作為該承載結構20與該佈線結構30之間的電性連接路徑,以取代部分支撐結構33。
圖4A及圖4B係為本發明之電子封裝件4之第四實施例之剖視示意圖。本實施例與上述實施例之差異在於包覆層之設計,其它結構大致相同,故不再贅述相同處。
如圖4A所示,該包覆層25係於該容置空間S處形成有缺口,使該包覆層25之外觀呈凹凸狀,如階梯部P,且該階梯部P之上表面係低於該包覆層25對應於該線路結構34處之上表面。接著,於該階梯部P之上表面上形成複數開孔450,以令該承載結構20之部分佈線層200外露於該些開孔450,供結合複數如銲錫材料之導電元件48,以作為穿模導通(Through Molding Via,簡稱TMV)結構,使該導電元件48電性連接該佈線層200。
如圖4B所示,以封裝模組4a取代功能元件26,將該封裝模組4a接合於如銲錫材料之該複數導電元件48。
於本實施例中,該封裝模組4a係包含一用以接合並電性連接該導電元件48之封裝基板40、電性連接該封裝基板40之半導體晶片41以及包覆該半導體晶片41之封裝膠體42。
再者,如圖4C所示之電子封裝件4c,該包覆層25亦可形成於該承載結構之第一側20a之局部表面上而未形成於該容置空間S上,以令該包覆層45包覆該線路結構34、該些第一電子元件21a,21b、導線29、該些第二電子
元件22a,22b及該些支撐結構23,使該容置空間S處之部分該佈線層200外露於該包覆層45,以供設置該功能元件26,即該包覆層45未覆蓋該容置空間S並於該容置空間S處呈鏤空區而未包覆該功能元件26。
因此,本實施例之電子封裝件4,4c藉由該包覆層25於該容置空間S處外露該承載結構20之第一側20a之佈線層200,以利於接置各種功能之封裝模組4a或功能元件26。例如,該功能元件26除了可為被動元件外,亦可為電性連接器(connector),以強化系統組裝之配置彈性選擇性。或者,該功能元件26可為感測(sensor)元件,如光感或氣壓感測,甚至於其它不可放置於該包覆層25內之元件。
另外,該容置空間S處之部分該佈線層200係外露於該開孔450或包覆層45,使該佈線層200可作為測試接點(或電性連接墊),以直接連接測試裝置,因而能簡化測試治具或免用測試治具。
圖5A、圖5B及圖5C係為本發明之電子封裝件5之第五實施例之剖視示意圖。本實施例與上述實施例之差異在於新增屏蔽結構59,其它結構大致相同,故不再贅述相同處。
如圖5A及圖5B所示,基於圖2B所示之電子封裝件2b,係於該包覆層25之表面上依需求形成金屬層,供作為屏蔽結構59,以防止電磁干擾(Electromagnetic Interference,簡稱EMI)。
於本實施例中,該屏蔽結構59可形成於該包覆層25之側面25c並延伸至該承載結構20之側面20c,如圖5A所示,甚至於可依需求形成於該包覆層25之上表面25a對應該第一與第二電子元件21a,21b,22a,22b之區域,如圖5B所示,但未形成於該包覆層25之上表面25a之其它區域。
再者,於其它實施例中,如圖5C所示,若該些導電元件28上接置封裝模組5a,則該屏蔽結構59可延伸至該封裝模組5a之外表面上,以保護該封裝模組5a內之半導體晶片51免受電磁干擾(EMI)。
應可理解地,該屏蔽結構59適用於所有實施例之可能態樣,並不限於圖2B所示之電子封裝件2b。
圖6A、圖6B及圖6C係為本發明之電子封裝件6之第六實施例之剖視示意圖。本實施例與上述實施例之差異在於支撐結構之態樣,其它結構大致相同,故不再贅述相同處。
如圖6A所示,該支撐結構61係為線路板,其導電跡線610藉由如銲錫材之導電體611結合至該承載結構20之第一側20a之佈線層200與該線路結構34之線路層上。
於本實施例中,該線路結構34之第二表面24b上可減少配置該導電元件28之數量,以配置更多功能元件66。例如,該功能元件66係為半導體晶片,其置放於該線路結構34上並藉由導線660以打線方式電性連接該承載結構20之佈線層200。
再者,如圖6B所示,該支撐結構62亦可為如金屬柱之導電柱,其可由銅導線架蝕刻或電鍍銅柱而得。或者,如圖6C所示,該支撐結構63係為銅核心球,其係由銲錫材631包覆銅塊體630所構成。應可理解地,有關支撐結構之態樣繁多,並無特別限制。
綜上所述,本發明之電子封裝件,係藉由該線路結構之版面寬度小於該承載結構之版面寬度,使該承載結構之第一側之上方形成容置空間,供配
置其它功能元件,故本發明之電子元件之配置空間不會受限於該支撐結構之高度,使該承載結構之第一側上能依需求配置不同規格之電子元件。
再者,由於該電子元件之配置空間不會受限於該支撐結構之高度,因而能將該支撐結構之寬度朝微小化設計,以減少該支撐結構於該承載結構之第一側上之佈設面積,使該承載結構之第一側上能依需求增設其它電子元件。
又,藉由該包覆層採用雙面模壓之設計,以於該承載結構之第一側與第二側上能配置複數第一電子元件、及於該線路結構之第一表面與第二表面上能配置複數第二電子元件,故本發明之電子封裝件能有效提升封裝密度,以符合終端產品需具有多功能之需求,且藉由該包覆層相對該承載結構與該線路結構之四面模壓,以提高該電子封裝件之整體結構強度,進而改善多層堆疊結構的翹曲問題。
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。
2:電子封裝件
20:承載結構
20a:第一側
20b:第二側
200:佈線層
21a,21b:第一電子元件
210,220:導電凸塊
22a,22b:第二電子元件
23:支撐結構
24:線路結構
24a:第一表面
24b:第二表面
25:包覆層
25a:上表面
25b:下表面
250:開孔
26:功能元件
27:銲球
28:導電元件
D,R:版面寬度
h1,h2:高度
t:寬度
S:容置空間
Claims (11)
- 一種電子封裝件,係包括:具有佈線層之承載結構,係定義有相對之第一側與第二側;複數第一電子元件,係分別設於該承載結構之第一側與第二側上並電性連接該佈線層;支撐結構,係設於該承載結構之第一側上且電性連接該佈線層;線路結構,係具有相對之第一表面與第二表面,以令該線路結構以其第一表面藉由該支撐結構疊設於該承載結構之第一側上,並使該支撐結構電性連接該線路結構,其中,該線路結構之版面寬度係小於該承載結構之版面寬度,使該承載結構之第一側之上方形成容置空間,以於該容置空間中配置具有電性功能之功能元件、導線及封裝模組之至少其中一者;複數第二電子元件,係分別設於該線路結構之第一表面與第二表面上並電性連接該線路結構;以及包覆層,係形成於該承載結構之第一側與第二側及該線路結構之第一表面與第二表面上以包覆該複數第一電子元件、該複數第二電子元件及該支撐結構。
- 如請求項1所述之電子封裝件,其中,該功能元件係電性連接該佈線層,且該功能元件相對於該承載結構第一側之高度係大於該支撐結構相對於該承載結構第一側之高度。
- 如請求項1所述之電子封裝件,其中,該包覆層於對應該線路結構之第二表面上係形成有複數開孔,以令該線路結構之第二表面上之部分區域外露於該複數開孔,供結合複數導電元件。
- 如請求項1所述之電子封裝件,其中,該線路結構復可藉由該導線電性連接該承載結構之佈線層。
- 如請求項1所述之電子封裝件,其中,該支撐結構復設於該承載結構之第二側上,以供疊設一電子模組。
- 如請求項1所述之電子封裝件,其中,該包覆層係於該容置空間處形成階梯部,且該階梯部之上表面係低於該包覆層對應於該線路結構處之上表面,並於該階梯部之上表面形成複數開孔,以令該承載結構之部分該佈線層外露於該複數開孔。
- 如請求項6所述之電子封裝件,其中,該複數開孔中可藉由複數導電元件接合該封裝模組,使該封裝模組電性連接該佈線層。
- 如請求項1所述之電子封裝件,其中,該包覆層係形成於該承載結構之第一側之局部表面上,使該包覆層未覆蓋該容置空間並於該容置空間處呈鏤空區。
- 如請求項1所述之電子封裝件,復包括形成於該包覆層上之屏蔽結構。
- 如請求項1所述之電子封裝件,其中,該支撐結構係為銲錫球、導電柱或銅核心球。
- 如請求項1所述之電子封裝件,其中,該支撐結構係為線路板,其藉由導電體結合至該承載結構之第一側之佈線層與該線路結構上。
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