TWI821083B - 半導體封裝裝置 - Google Patents

半導體封裝裝置 Download PDF

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TWI821083B
TWI821083B TW111149678A TW111149678A TWI821083B TW I821083 B TWI821083 B TW I821083B TW 111149678 A TW111149678 A TW 111149678A TW 111149678 A TW111149678 A TW 111149678A TW I821083 B TWI821083 B TW I821083B
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working
metal cover
accommodating groove
semiconductor packaging
packaging device
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TW111149678A
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TW202427717A (zh
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楊昇帆
林彥兆
楊啓銘
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創意電子股份有限公司
台灣積體電路製造股份有限公司
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Priority to TW111149678A priority Critical patent/TWI821083B/zh
Priority to US18/169,212 priority patent/US20240213112A1/en
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Publication of TWI821083B publication Critical patent/TWI821083B/zh
Publication of TW202427717A publication Critical patent/TW202427717A/zh

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Abstract

一種半導體封裝裝置包含一封裝模組、一散熱蓋及一熱界面材料層。封裝模組包含一基板與一工作晶片，工作晶片焊設於基板之一面。散熱蓋包含一金屬蓋體、一容置槽及多個凸柱。金屬蓋體固定於基板之此面，且罩蓋工作晶片。容置槽位於金屬蓋體面向工作晶片之一面，且容納工作晶片，這些凸柱分別位於金屬蓋體上且間隔分布於容置槽內。容置槽之深度大於每個凸柱的高度，且容置槽之面積大於工作晶片之面積。熱界面材料層，呈非固態狀，位於容置槽內及凸柱之間，且包覆凸柱，並且直接接觸工作晶片、金屬蓋體與凸柱。

Description

半導體封裝裝置
本發明有關於一種半導體封裝裝置。
近年來，隨著半導體封裝模組的高功能化及輕薄短小化之要求，由於半導體封裝模組伴隨著越高之發熱量，需要合適的散熱手段才能有效地將熱能散去。
然而，應用在現有半導體封裝模組的散熱架構已逐漸難以符合要求。故，倘若沒有良好的散熱手段，半導體封裝模組的穩定性及產品壽命將大大降低。
由此可見，上述技術顯然仍存在不便與缺陷，而有待加以進一步改良。因此，如何能有效地解決上述不便與缺陷，實屬當前重要研發課題之一，亦成爲當前相關領域亟需改進的目標。
本發明之一目的在於提供一種半導體封裝裝置，用以解決以上先前技術所提到的困難。
本發明之一實施例提供一種半導體封裝裝置。半導體封裝裝置包含一封裝模組、一散熱蓋及一熱界面材料層。封裝模組包含一基板與一工作晶片，工作晶片焊設於基板之一面。散熱蓋包含一金屬蓋體、一容置槽及多個凸柱。金屬蓋體之一面固定於基板之此面，且罩蓋工作晶片。容置槽位於金屬蓋體之此面，且容納工作晶片，這些凸柱分別凸設於金屬蓋體上且間隔分布於容置槽內。容置槽之深度大於每個凸柱的高度，且容置槽之面積大於工作晶片之面積。熱界面材料層，呈非固態狀，位於容置槽內及這些凸柱之間，且包覆這些凸柱，並且直接接觸工作晶片、金屬蓋體與這些凸柱。
如此，透過以上架構，本發明能夠提供良好的散熱手段，使其有效提升散熱性能，從而大大提高半導體封裝模組的穩定性及產品壽命。
以上所述僅係用以闡述本發明所欲解決的問題、解決問題的技術手段、及其產生的功效等等，本發明之具體細節將在下文的實施方式及相關圖式中詳細介紹。
以下將以圖式揭露本發明之複數個實施例，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明各實施例中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。
第1圖為本發明一實施例之半導體封裝裝置10的剖視圖。第2圖為第1圖之散熱蓋200之下視圖。如第1圖與第2圖所示，在本實施例中，半導體封裝裝置10包含一封裝模組100、一散熱蓋200及一熱界面材料層300。封裝模組100包含一基板110與一工作晶片140。基板110包含彼此相對之頂面120與底面130。工作晶片140焊設於基板110之頂面120上。基板110之底面130具有一球柵陣列封裝131(Ball Grid Array，BGA)，球柵陣列封裝131透過基板110電性連接工作晶片140。
散熱蓋200包含一金屬蓋體210、一凹陷部230、一容置槽240、一隆起部280及多個凸柱270。金屬蓋體210包含彼此相對之第一面211與第二面212。凹陷部230形成於金屬蓋體210之第一面211，例如從金屬蓋體210之第一面211朝著第二面212之方向凹陷。容置槽240形成於凹陷部230之底面231，且面向封裝模組100之工作晶片140。隆起部280形成於金屬蓋體210之第二面212，朝著遠離基板110之頂面120之方向隆起，且對應凹陷部230之位置配置。這些凸柱270分別設於金屬蓋體210上，且間隔分布於容置槽240內。故，當金屬蓋體210罩蓋於工作晶片140及基板110之頂面120，且金屬蓋體210之第一面211固定於基板110之頂面120，工作晶片140完全容納於凹陷部230內，且容置槽240能夠讓工作晶片140之一部分伸入其中，並且凸柱270直接接觸工作晶片140，使得工作晶片140固定於基板110與凸柱270之間。
須了解到，容置槽240之深度D大於每個凸柱270的高度H。容置槽240之面積大於工作晶片140之面積，工作晶片140之面積例如為工作晶片140之頂部141之面積。
然而，本發明不限於以上所述，其他實施例中，散熱蓋200也可能不具有凹陷部230；或者，容置槽240之深度也可能容納工作晶片140之全部體積；或者，凸柱270也可能不直接接觸工作晶片140。
熱界面材料層300(Thermal Interface Material，TIM，圖中以網點表示) 在一常溫下呈非固態狀，充滿或至少填入容置槽240內，位於這些凸柱270之間的間隔空間273內，且包覆這些凸柱270，並且直接接觸工作晶片140、金屬蓋體210與這些凸柱270。故，熱界面材料層300能夠將工作晶片140之熱能快速傳遞到這些凸柱270及金屬蓋體210上，從而從金屬蓋體210之表面朝外散去。
更具體地，散熱蓋200更包含一圍牆部250，圍牆部250凸設於金屬蓋體210面向工作晶片140之一面(意即凹陷部230之底面231)，以致定義出上述容置槽240，意即，圍牆部250之多個內側壁251共同圍繞而定義出所述容置槽240，用以侷限熱界面材料層300之位置。舉例來說，圍牆部250包含一連續輪廓，連續輪廓例如為矩形(如口字型或長環形)。圍牆部250不具空隙，圍牆部250能夠侷限熱界面材料層300之位置，使得熱界面材料層300不致流至金屬蓋體210於容置槽240以外的區域。然而，本發明不限於以上所述，其他實施例中，連續輪廓也可能為圓形；圍牆部250也可能為不連續輪廓；或者散熱蓋200也可能不具有圍牆部250。
在本實施例中，這些凸柱270以一陣列方式間隔布置於容置槽240內。每個凸柱270豎立地設於容置槽240之槽底242，換句話說，每個凸柱270從金屬蓋體210朝外伸出，且每個凸柱270背對金屬蓋體210之末端為自由端，且伸入熱界面材料層300內。在本實施例中，這些凸柱270與金屬蓋體210為一體成形，亦即，這些凸柱270與金屬蓋體210皆為金屬材質，然而，本發明不限於凸柱270之形成方式及外型。
此外，金屬蓋體210更包含一凸緣220，凸緣220呈口字型，且完全地圍繞凹陷部230，且凸緣220之一面固接至基板110之頂面120。在本實施例中，當金屬蓋體210罩蓋工作晶片140及基板110之頂面120時，金屬蓋體210之凸緣220透過黏合劑(圖中未示)固定地黏著於基板110之頂面120，然而，本發明不限於以上所述。其他實施例中，散熱蓋200也可能不具有凸緣220。
在本實施例中，工作晶片140為單一晶粒，包含一頂部141、一底部142與多個鄰接面143。工作晶片140之頂部141直接接觸每個凸柱270之末端面272。底部142相對頂部141，且接觸基板110之頂面120，這些鄰接面143圍繞且鄰接工作晶片140之頂部141與底部142。工作晶片140之底部142具有焊球150，且基板110之頂面120具有焊墊121。工作晶片140之焊球150分別銲接於基板110之焊墊121上，使得工作晶片140電性連接基板110及球柵陣列封裝131。工作晶片140與基板110之間更包含一保護層160。保護層160共同包圍並保護焊球150與焊墊121。舉例來說，保護層160為環氧樹脂等相似材料，然而，本發明不限於此。熱界面材料層300直接接觸工作晶片140之頂部141與這些鄰接面143，或者至少直接接觸工作晶片140之頂部141。
第1圖之半導體封裝裝置10的另一選項中，工作晶片140內具有導熱通道(例如TSV，Through Silicon Via，圖中未示)，導熱通道貫穿工作晶片140之頂部141與底部142。故，相較於沒有導熱通道之半導體封裝裝置，此實施例之半導體封裝裝置具有較小的熱阻(Theta JC，C/W)，然而，本發明不限於以上所述。
第3A圖至第3D圖為本發明一實施例之半導體封裝裝置11之組裝順序圖，其中第3A圖為散熱蓋200之剖視圖。如第3A圖所示，取得一如上述之散熱蓋200，並讓散熱蓋200之容置槽240之槽口241朝向上方；接著，如第3B圖所示，將如上述之熱界面材料層300注入散熱蓋200之容置槽240內，使得熱界面材料層300被侷限於圍牆部250內，而不致外溢至金屬蓋體210於容置槽240以外的區域；接著，如第3C圖與第3D圖所示，取得一如上述之封裝模組100，且將封裝模組100翻轉，使得封裝模組100之工作晶片140改為朝下突出；接著，同時讓基板110之頂面120透過黏合劑(圖中未示)固定地黏著於金屬蓋體210之凸緣220，以及讓工作晶片140朝下浸入容置槽240內之熱界面材料層300內，但工作晶片140尚未直接接觸凸柱270之末端面272，與凸柱270之末端面272之間相隔有間隙G，且熱界面材料層300充滿於間隙G內；接著，如第3D圖所示，翻轉以取得此半導體封裝裝置11。
須了解到，當翻轉以取得此半導體封裝裝置11，使得容置槽240之槽口241朝向下方時，容置槽240內之這些凸柱270還能夠阻礙熱界面材料層300之滑落，從而減緩熱界面材料層300之運動。
第4圖為本發明一實施例之半導體封裝裝置12的剖視圖。第5圖為第4圖之散熱蓋201之下視圖。如第4圖與第5圖所示，本實施例之半導體封裝裝置12與第1圖之半導體封裝裝置10大致相同，其差異在於，本實施例之散熱蓋201具有一凹槽部260而非圍牆部。凹槽部260凹設於金屬蓋體210面向工作晶片140之一面(意即凹陷部230之底面231)，以致定義出上述容置槽240，意即，凹槽部260之多個內側壁261共同圍繞而定義出所述容置槽240，用以侷限熱界面材料層300之位置。舉例來說，凹槽部260例如為矩形(如口字型或長環形)，能夠侷限熱界面材料層300之位置，使得熱界面材料層300不致流至金屬蓋體210於容置槽240以外的區域。然而，本發明不限於以上所述，其他實施例中，凹槽部260也可能為圓形。
須了解到，由於本實施例之容置槽240形成於散熱蓋201之凹槽部260內，半導體封裝裝置12的整體厚度能夠有效地降低。
第6圖為本發明一實施例之半導體封裝裝置13的剖視圖。本實施例之半導體封裝裝置13與第1圖之半導體封裝裝置10大致相同，其差異在於，如第6圖所示，本實施例之半導體封裝裝置13之工作晶片170並非單晶粒175，而是複合式晶片，工作晶片170包含一基材171、多個焊點174、多個晶粒175及一封裝部176。基材171包含彼此相對之第一表面172及第二表面173。這些焊點174間隔排列於基材171之第一表面172，用以焊設於基板110之頂面120。這些晶粒175分別焊接於基材171之第二表面173，間隔排列於基材171之第二表面173，且透過基材171內之佈線(圖中未示)電連接這些焊點174。封裝部176將這些晶粒175一併密封地包覆於基材171上，且封裝部176部分地伸入容置槽240內，且接觸熱界面材料層300。在本實施例中，位於容置槽240內之這些凸柱270之末端面272分別接觸封裝部176及這些晶粒175。
請參閱表一，表一為裝置A、B及C分別的環境數據之比較。裝置A(第1圖之半導體封裝裝置10)的多個導體(即凸柱270)直接接觸工作晶片140，裝置B(第3D圖之半導體封裝裝置11)的多個導體(即凸柱270)未直接接觸工作晶片140，且裝置C之單導體透過熱界面材料層300熱連接工作晶片140。
裝置A 裝置B 裝置C
熱阻Theta JC (C/W) 0.027 0.039 0.053
導體與工作晶片140之間的間隙(mm) N/A 0.01 0.01
熱界面材料層300接觸工作晶片140之總面積(mm 2) 273.15 273.15 228.16
導體端面之總面積(mm 2) 190.08 190.08 253.51
導體至工作晶片140之厚度(mm) 0.13 0.13 0.13
表一
故，由表一可知，雖然裝置C之單導體之末端面面積(253.51平方毫米)大於裝置A、B之導體總面積(190.08平方毫米)，然而，因為裝置A、B具有間隔分布之導體(即凸柱270)，裝置A、B之熱阻仍小於裝置C之熱阻，而具有較佳的散熱性能。此外，由於裝置A(如第1 圖之半導體封裝裝置10)的導體(即凸柱270)直接接觸工作晶片140，裝置A(如第1 圖之半導體封裝裝置10)之熱阻仍小於裝置B(如第3D圖之半導體封裝裝置11)之熱阻，從而具有較佳的散熱性能。
如此，透過以上各實施例所述之架構，本發明能夠提供良好的散熱手段，使其有效提升散熱性能，從而大大提高半導體封裝模組的穩定性及產品壽命。
最後，上述所揭露之各實施例中，並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，皆可被保護於本發明中。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10、11、12、13:半導體封裝裝置
100:封裝模組
110:基板
120:頂面
121:焊墊
130:底面
131:球柵陣列封裝
140、170:工作晶片
141:頂部
142:底部
143:鄰接面
150:焊球
160:保護層
171:基材
172:第一表面
173:第二表面
174:焊點
175:晶粒
176:封裝部
200、201:散熱蓋
210:金屬蓋體
211:第一面
212:第二面
220:凸緣
230:凹陷部
231:底面
240:容置槽
241:槽口
242:槽底
250:圍牆部
251:內側壁
260:凹槽部
261:內側壁
270:凸柱
272:末端面
273:間隔空間
280:隆起部
300:熱界面材料層
D:深度
G:間隙
H:高度
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下： 第1圖為本發明一實施例之半導體封裝裝置的剖視圖。 第2圖為第1圖之散熱蓋之下視圖。 第3A圖至第3D圖為本發明一實施例之半導體封裝裝置之組裝順序圖。 第4圖為本發明一實施例之半導體封裝裝置的剖視圖。 第5圖為第4圖之散熱蓋之下視圖。 第6圖為本發明一實施例之半導體封裝裝置的剖視圖。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
10:半導體封裝裝置
100:封裝模組
110:基板
120:頂面
121:焊墊
130:底面
131:球柵陣列封裝
140:工作晶片
141:頂部
142:底部
143:鄰接面
150:焊球
160:保護層
200:散熱蓋
210:金屬蓋體
211:第一面
212:第二面
220:凸緣
230:凹陷部
231:底面
240:容置槽
242:槽底
250:圍牆部
251:內側壁
270:凸柱
272:末端面
273:間隔空間
280:隆起部
300:熱界面材料層
D:深度
H:高度

Claims (9)

  1. 一種半導體封裝裝置，包含：一封裝模組，包含一基板與一工作晶片，該工作晶片焊設於該基板之一面；一散熱蓋，包含一金屬蓋體、一容置槽、一隆起部、一凹陷部及複數個凸柱，該金屬蓋體固定於該基板之該面，且罩蓋該工作晶片，該容置槽位於該金屬蓋體面向該工作晶片之一面，且容納該工作晶片，該隆起部位於該金屬蓋體背對該基板之一面，該些凸柱分別位於該金屬蓋體上且間隔分布於該容置槽內，該凹陷部位於該金屬蓋體面向該工作晶片之該面，且對應該隆起部配置，用以將該工作晶片完全容納於其中，且該容置槽設於該凹陷部之底面，其中該容置槽之深度大於該些凸柱中每一者的高度，且該容置槽之面積大於該工作晶片之面積；以及一熱界面材料層，呈非固態狀，位於該容置槽內及該些凸柱之間，且包覆該些凸柱，並且直接接觸該工作晶片、該金屬蓋體與該些凸柱。
  2. 如請求項1所述之半導體封裝裝置，其中該散熱蓋更包含一圍牆部，該圍牆部凸設於該金屬蓋體面向該工作晶片之該面，且完全圍繞而定義出該容置槽，用以使該熱界面材料層侷限其中。
  3. 如請求項2所述之半導體封裝裝置，其中該 圍牆部包含一連續輪廓，該連續輪廓為矩形與圓形其中之一。
  4. 如請求項1所述之半導體封裝裝置，其中該散熱蓋更包含一凹槽部，該凹槽部凹設於該金屬蓋體面向該工作晶片之該面，且該凹槽部之多個內側壁共同圍繞而定義出該容置槽，用以使該熱界面材料層侷限其中。
  5. 如請求項1所述之半導體封裝裝置，其中該些凸柱直接接觸該工作晶片。
  6. 如請求項1所述之半導體封裝裝置，其中該些凸柱與該工作晶片之間相隔有一間隙，且該熱界面材料層充滿於該間隙內。
  7. 如請求項1所述之半導體封裝裝置，其中該些凸柱分別為直線狀，且分別豎立地設於該容置槽之槽底。
  8. 如請求項1所述之半導體封裝裝置，其中該工作晶片包含一頂部、一底部與複數個鄰接面，該底部相對該頂部，且接觸該基板之該面，該些鄰接面圍繞且鄰接該頂部，其中該熱界面材料層直接接觸該工作晶片之該頂部與該些鄰接面至少其中之一。
  9. 如請求項1所述之半導體封裝裝置，其中該工作晶片包含：一基材，包含彼此相對之一第一表面及一第二表面；複數個焊點，間隔排列於該基材之該第一表面，用以焊設於該基板之該面；複數個晶粒，分別焊接於該基材之該第二表面，且透過該基材電連接該些焊點；以及一封裝部，將該些晶粒一併密封地包覆於該基材上，且部分地伸入該容置槽內，且熱連接該熱界面材料層。
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TWM572570U (zh) * 2017-06-08 2019-01-01 美商吉林克斯公司 積體電路封裝及其之蓋子
CN111415872A (zh) * 2019-01-08 2020-07-14 台湾积体电路制造股份有限公司 形成封装结构的方法
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CN115132704A (zh) * 2022-06-29 2022-09-30 星科金朋半导体（江阴）有限公司 散热盖板的芯片封装结构及其制造方法
CN115249674A (zh) * 2021-06-18 2022-10-28 台湾积体电路制造股份有限公司 封装组件

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CN206353525U (zh) * 2015-09-28 2017-07-25 赛灵思公司 具有加强盖板的堆叠硅封装组件
TWM572570U (zh) * 2017-06-08 2019-01-01 美商吉林克斯公司 積體電路封裝及其之蓋子
CN111415872A (zh) * 2019-01-08 2020-07-14 台湾积体电路制造股份有限公司 形成封装结构的方法
CN115249674A (zh) * 2021-06-18 2022-10-28 台湾积体电路制造股份有限公司 封装组件
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