TWI817064B - 平坦化設備、平坦化方法及製造物品的方法 - Google Patents
平坦化設備、平坦化方法及製造物品的方法 Download PDFInfo
- Publication number
- TWI817064B TWI817064B TW109141980A TW109141980A TWI817064B TW I817064 B TWI817064 B TW I817064B TW 109141980 A TW109141980 A TW 109141980A TW 109141980 A TW109141980 A TW 109141980A TW I817064 B TWI817064 B TW I817064B
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- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 9
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 53
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- 230000000717 retained effect Effects 0.000 claims description 3
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- 239000012530 fluid Substances 0.000 description 10
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001127 nanoimprint lithography Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Micromachines (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/779,205 US11562924B2 (en) | 2020-01-31 | 2020-01-31 | Planarization apparatus, planarization process, and method of manufacturing an article |
| US16/779,205 | 2020-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202143330A TW202143330A (zh) | 2021-11-16 |
| TWI817064B true TWI817064B (zh) | 2023-10-01 |
Family
ID=77062134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109141980A TWI817064B (zh) | 2020-01-31 | 2020-11-30 | 平坦化設備、平坦化方法及製造物品的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US11562924B2 (enExample) |
| JP (1) | JP7555829B2 (enExample) |
| KR (1) | KR102831923B1 (enExample) |
| TW (1) | TWI817064B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12065573B2 (en) * | 2020-07-31 | 2024-08-20 | Canon Kabushiki Kaisha | Photocurable composition |
| US11908711B2 (en) * | 2020-09-30 | 2024-02-20 | Canon Kabushiki Kaisha | Planarization process, planarization system and method of manufacturing an article |
| US12282251B2 (en) | 2021-09-24 | 2025-04-22 | Canon Kabushiki Kaisha | Method of shaping a surface, shaping system, and method of manufacturing an article |
| US12195382B2 (en) * | 2021-12-01 | 2025-01-14 | Canon Kabushiki Kaisha | Superstrate and a method of using the same |
| US20250269438A1 (en) * | 2024-02-27 | 2025-08-28 | Canon Kabushiki Kaisha | Chuck assembly, planarization process, apparatus and method of manufacturing an article |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060077374A1 (en) * | 2002-07-11 | 2006-04-13 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
| US20080305440A1 (en) * | 2002-05-16 | 2008-12-11 | The Board Of Regents, The University Of Texas System | Apparatus for fabricating nanoscale patterns in light curable compositions using an electric field |
| US20100053578A1 (en) * | 2002-07-11 | 2010-03-04 | Molecular Imprints, Inc. | Apparatus for imprint lithography using an electric field |
Family Cites Families (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989103A (en) * | 1997-09-19 | 1999-11-23 | Applied Materials, Inc. | Magnetic carrier head for chemical mechanical polishing |
| US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| US20040206621A1 (en) * | 2002-06-11 | 2004-10-21 | Hongwen Li | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
| US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US7019819B2 (en) * | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
| US20050098534A1 (en) * | 2003-11-12 | 2005-05-12 | Molecular Imprints, Inc. | Formation of conductive templates employing indium tin oxide |
| WO2005120834A2 (en) * | 2004-06-03 | 2005-12-22 | Molecular Imprints, Inc. | Fluid dispensing and drop-on-demand dispensing for nano-scale manufacturing |
| WO2006076609A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Printable electronic features on non-uniform substrate and processes for making same |
| US7878791B2 (en) * | 2005-11-04 | 2011-02-01 | Asml Netherlands B.V. | Imprint lithography |
| US7622935B2 (en) * | 2005-12-02 | 2009-11-24 | Formfactor, Inc. | Probe card assembly with a mechanically decoupled wiring substrate |
| US8850980B2 (en) * | 2006-04-03 | 2014-10-07 | Canon Nanotechnologies, Inc. | Tessellated patterns in imprint lithography |
| US8012395B2 (en) * | 2006-04-18 | 2011-09-06 | Molecular Imprints, Inc. | Template having alignment marks formed of contrast material |
| US7718545B1 (en) * | 2006-10-30 | 2010-05-18 | Hewlett-Packard Development Company, L.P. | Fabrication process |
| JP5182470B2 (ja) | 2007-07-17 | 2013-04-17 | 大日本印刷株式会社 | インプリントモールド |
| US8187515B2 (en) * | 2008-04-01 | 2012-05-29 | Molecular Imprints, Inc. | Large area roll-to-roll imprint lithography |
| CN102089708A (zh) * | 2008-06-09 | 2011-06-08 | 得克萨斯州大学系统董事会 | 适应性纳米形貌雕刻 |
| JP5759195B2 (ja) * | 2011-02-07 | 2015-08-05 | キヤノン株式会社 | 型、インプリント方法及び物品製造方法 |
| US20140028686A1 (en) * | 2012-07-27 | 2014-01-30 | Qualcomm Mems Technologies, Inc. | Display system with thin film encapsulated inverted imod |
| JP2014049658A (ja) * | 2012-08-31 | 2014-03-17 | Toshiba Corp | パターン形成方法及びテンプレート |
| JP5823937B2 (ja) | 2012-09-07 | 2015-11-25 | 株式会社東芝 | モールド、モールド用ブランク基板及びモールドの製造方法 |
| JP5851442B2 (ja) * | 2013-03-25 | 2016-02-03 | 株式会社東芝 | モールド及びその製造方法 |
| US9718096B2 (en) * | 2013-08-19 | 2017-08-01 | Board Of Regents, The University Of Texas System | Programmable deposition of thin films of a user-defined profile with nanometer scale accuracy |
| CN111584354B (zh) * | 2014-04-18 | 2021-09-03 | 株式会社荏原制作所 | 蚀刻方法 |
| US10409156B2 (en) * | 2015-02-13 | 2019-09-10 | Canon Kabushiki Kaisha | Mold, imprint apparatus, and method of manufacturing article |
| JP2016157785A (ja) * | 2015-02-24 | 2016-09-01 | 株式会社東芝 | テンプレート形成方法、テンプレートおよびテンプレート基材 |
| SG11201803014WA (en) * | 2015-10-15 | 2018-05-30 | Univ Texas | Versatile process for precision nanoscale manufacturing |
| JP6597186B2 (ja) | 2015-10-30 | 2019-10-30 | 大日本印刷株式会社 | インプリント用のモールド、モールド製造用の基板およびインプリント方法 |
| US10717646B2 (en) * | 2016-05-20 | 2020-07-21 | Board Of Regents, The University Of Texas System | Precision alignment of the substrate coordinate system relative to the inkjet coordinate system |
| US11131922B2 (en) * | 2016-06-06 | 2021-09-28 | Canon Kabushiki Kaisha | Imprint lithography template, system, and method of imprinting |
| US11762284B2 (en) * | 2016-08-03 | 2023-09-19 | Board Of Regents, The University Of Texas System | Wafer-scale programmable films for semiconductor planarization and for imprint lithography |
| US10580659B2 (en) * | 2017-09-14 | 2020-03-03 | Canon Kabushiki Kaisha | Planarization process and apparatus |
| US10606171B2 (en) * | 2018-02-14 | 2020-03-31 | Canon Kabushiki Kaisha | Superstrate and a method of using the same |
| JP7218114B2 (ja) | 2018-07-12 | 2023-02-06 | キヤノン株式会社 | 平坦化装置、平坦化方法及び物品の製造方法 |
| US11198235B2 (en) * | 2018-08-09 | 2021-12-14 | Canon Kabushiki Kaisha | Flexible mask modulation for controlling atmosphere between mask and substrate and methods of using the same |
| JP2020043160A (ja) * | 2018-09-07 | 2020-03-19 | キオクシア株式会社 | インプリント装置、インプリント方法、及び半導体装置の製造方法 |
| US11018018B2 (en) * | 2018-12-05 | 2021-05-25 | Canon Kabushiki Kaisha | Superstrate and methods of using the same |
| US10754078B2 (en) * | 2018-12-20 | 2020-08-25 | Canon Kabushiki Kaisha | Light source, a shaping system using the light source and an article manufacturing method |
| US10892167B2 (en) * | 2019-03-05 | 2021-01-12 | Canon Kabushiki Kaisha | Gas permeable superstrate and methods of using the same |
| US11664220B2 (en) * | 2019-10-08 | 2023-05-30 | Canon Kabushiki Kaisha | Edge exclusion apparatus and methods of using the same |
| US11776840B2 (en) * | 2019-10-29 | 2023-10-03 | Canon Kabushiki Kaisha | Superstrate chuck, method of use, and method of manufacturing an article |
| US11215921B2 (en) * | 2019-10-31 | 2022-01-04 | Canon Kabushiki Kaisha | Residual layer thickness compensation in nano-fabrication by modified drop pattern |
| US11550216B2 (en) * | 2019-11-25 | 2023-01-10 | Canon Kabushiki Kaisha | Systems and methods for curing a shaped film |
| US11107678B2 (en) * | 2019-11-26 | 2021-08-31 | Canon Kabushiki Kaisha | Wafer process, apparatus and method of manufacturing an article |
| JP7346268B2 (ja) * | 2019-12-05 | 2023-09-19 | キヤノン株式会社 | インプリント用のテンプレート、テンプレートを用いたインプリント方法 |
| US11567401B2 (en) * | 2019-12-20 | 2023-01-31 | Canon Kabushiki Kaisha | Nanofabrication method with correction of distortion within an imprint system |
| US11656546B2 (en) * | 2020-02-27 | 2023-05-23 | Canon Kabushiki Kaisha | Exposure apparatus for uniform light intensity and methods of using the same |
| JP2021144985A (ja) * | 2020-03-10 | 2021-09-24 | キオクシア株式会社 | テンプレート、テンプレートの製造方法および半導体装置の製造方法 |
| US12136564B2 (en) * | 2020-03-30 | 2024-11-05 | Canon Kabushiki Kaisha | Superstrate and method of making it |
| US11443940B2 (en) * | 2020-06-24 | 2022-09-13 | Canon Kabushiki Kaisha | Apparatus for uniform light intensity and methods of using the same |
-
2020
- 2020-01-31 US US16/779,205 patent/US11562924B2/en active Active
- 2020-11-30 TW TW109141980A patent/TWI817064B/zh active
-
2021
- 2021-01-06 JP JP2021001035A patent/JP7555829B2/ja active Active
- 2021-01-19 KR KR1020210007179A patent/KR102831923B1/ko active Active
-
2022
- 2022-11-10 US US18/054,487 patent/US12283522B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080305440A1 (en) * | 2002-05-16 | 2008-12-11 | The Board Of Regents, The University Of Texas System | Apparatus for fabricating nanoscale patterns in light curable compositions using an electric field |
| US20060077374A1 (en) * | 2002-07-11 | 2006-04-13 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
| US20100053578A1 (en) * | 2002-07-11 | 2010-03-04 | Molecular Imprints, Inc. | Apparatus for imprint lithography using an electric field |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7555829B2 (ja) | 2024-09-25 |
| US20210242073A1 (en) | 2021-08-05 |
| KR20210098334A (ko) | 2021-08-10 |
| TW202143330A (zh) | 2021-11-16 |
| US11562924B2 (en) | 2023-01-24 |
| KR102831923B1 (ko) | 2025-07-10 |
| JP2021125680A (ja) | 2021-08-30 |
| US20230061361A1 (en) | 2023-03-02 |
| US12283522B2 (en) | 2025-04-22 |
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