TWI814837B - 電漿處理裝置及電漿處理裝置的射頻電源之控制方法 - Google Patents

電漿處理裝置及電漿處理裝置的射頻電源之控制方法 Download PDF

Info

Publication number
TWI814837B
TWI814837B TW108119645A TW108119645A TWI814837B TW I814837 B TWI814837 B TW I814837B TW 108119645 A TW108119645 A TW 108119645A TW 108119645 A TW108119645 A TW 108119645A TW I814837 B TWI814837 B TW I814837B
Authority
TW
Taiwan
Prior art keywords
radio frequency
frequency power
focus ring
power
plasma processing
Prior art date
Application number
TW108119645A
Other languages
English (en)
Chinese (zh)
Other versions
TW202013425A (zh
Inventor
永岩利文
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202013425A publication Critical patent/TW202013425A/zh
Application granted granted Critical
Publication of TWI814837B publication Critical patent/TWI814837B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
TW108119645A 2018-06-12 2019-06-06 電漿處理裝置及電漿處理裝置的射頻電源之控制方法 TWI814837B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-111973 2018-06-12
JP2018111973A JP6846384B2 (ja) 2018-06-12 2018-06-12 プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法

Publications (2)

Publication Number Publication Date
TW202013425A TW202013425A (zh) 2020-04-01
TWI814837B true TWI814837B (zh) 2023-09-11

Family

ID=68842142

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108119645A TWI814837B (zh) 2018-06-12 2019-06-06 電漿處理裝置及電漿處理裝置的射頻電源之控制方法

Country Status (6)

Country Link
US (1) US11264208B2 (OSRAM)
JP (1) JP6846384B2 (OSRAM)
KR (1) KR102812745B1 (OSRAM)
CN (1) CN111095497B (OSRAM)
TW (1) TWI814837B (OSRAM)
WO (1) WO2019239944A1 (OSRAM)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7504686B2 (ja) * 2020-07-15 2024-06-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
JP7474663B2 (ja) * 2020-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7505959B2 (ja) 2020-10-16 2024-06-25 東京エレクトロン株式会社 基板処理システム、制御方法及び制御プログラム
CN112538619A (zh) * 2020-11-05 2021-03-23 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) 一种射频电源的控制方法及装置
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
KR20250078478A (ko) * 2022-09-29 2025-06-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 에칭 방법
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227063A (ja) * 2007-03-12 2008-09-25 Tokyo Electron Ltd プラズマ処理装置及びプラズマ分布補正方法
TW200845091A (en) * 2007-03-30 2008-11-16 Lam Res Corp Method and apparatus for DC voltage control on RF-powered electrode
TW201030839A (en) * 2009-02-12 2010-08-16 Hitachi High Tech Corp Plasma Processing Method
TW201130080A (en) * 2009-06-02 2011-09-01 Tokyo Electron Ltd Plasma processing apparatus, plasma processing method, and program
TW201243942A (en) * 2003-09-05 2012-11-01 Tokyo Electron Ltd Focus ring and plasma processing apparatus
US20140034243A1 (en) * 2007-06-28 2014-02-06 Rajinder Dhindsa Apparatus for plasma processing system with tunable capacitance
TW201539608A (zh) * 2013-12-17 2015-10-16 Tokyo Electron Ltd 電漿密度之控制系統及方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173693B2 (ja) * 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置及びその方法
JP4219628B2 (ja) 2001-07-27 2009-02-04 東京エレクトロン株式会社 プラズマ処理装置および基板載置台
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4672456B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP4884047B2 (ja) * 2006-03-23 2012-02-22 東京エレクトロン株式会社 プラズマ処理方法
JP4597894B2 (ja) * 2006-03-31 2010-12-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5563347B2 (ja) * 2010-03-30 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
JP5864879B2 (ja) * 2011-03-31 2016-02-17 東京エレクトロン株式会社 基板処理装置及びその制御方法
JP6224958B2 (ja) * 2013-02-20 2017-11-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6244518B2 (ja) * 2014-04-09 2017-12-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2016031955A (ja) * 2014-07-28 2016-03-07 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017028111A (ja) * 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6541623B2 (ja) * 2016-06-20 2019-07-10 東京エレクトロン株式会社 プラズマ処理装置、及び波形補正方法
JP6826955B2 (ja) * 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201243942A (en) * 2003-09-05 2012-11-01 Tokyo Electron Ltd Focus ring and plasma processing apparatus
JP2008227063A (ja) * 2007-03-12 2008-09-25 Tokyo Electron Ltd プラズマ処理装置及びプラズマ分布補正方法
TW200845091A (en) * 2007-03-30 2008-11-16 Lam Res Corp Method and apparatus for DC voltage control on RF-powered electrode
US20140034243A1 (en) * 2007-06-28 2014-02-06 Rajinder Dhindsa Apparatus for plasma processing system with tunable capacitance
TW201030839A (en) * 2009-02-12 2010-08-16 Hitachi High Tech Corp Plasma Processing Method
TW201130080A (en) * 2009-06-02 2011-09-01 Tokyo Electron Ltd Plasma processing apparatus, plasma processing method, and program
TW201539608A (zh) * 2013-12-17 2015-10-16 Tokyo Electron Ltd 電漿密度之控制系統及方法

Also Published As

Publication number Publication date
KR20210019399A (ko) 2021-02-22
TW202013425A (zh) 2020-04-01
US20200266035A1 (en) 2020-08-20
KR102812745B1 (ko) 2025-05-23
CN111095497A (zh) 2020-05-01
JP2019216164A (ja) 2019-12-19
JP6846384B2 (ja) 2021-03-24
US11264208B2 (en) 2022-03-01
CN111095497B (zh) 2024-05-07
WO2019239944A1 (ja) 2019-12-19

Similar Documents

Publication Publication Date Title
KR102812745B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 장치의 고주파 전원을 제어하는 방법
CN107710378B (zh) 多电极基板支撑组件与相位控制系统
TWI772200B (zh) 溫度控制裝置及溫度控制方法
US20180076048A1 (en) Method of etching silicon oxide and silicon nitride selectively against each other
TWI799602B (zh) 電漿處理裝置及電漿蝕刻方法
TWI791874B (zh) 電漿蝕刻方法及電漿處理裝置
US20190237305A1 (en) Method for applying dc voltage and plasma processing apparatus
US11342165B2 (en) Plasma processing method
TWI887249B (zh) 電漿處理裝置
TW202032715A (zh) 載置台及基板處理裝置
TWI904223B (zh) 電漿處理裝置及電漿處理方法
US11264252B2 (en) Chamber lid with integrated heater