TWI813882B - Laminated substrate, method of manufacturing electronic device, and method of manufacturing laminated substrate - Google Patents

Laminated substrate, method of manufacturing electronic device, and method of manufacturing laminated substrate Download PDF

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TWI813882B
TWI813882B TW109117779A TW109117779A TWI813882B TW I813882 B TWI813882 B TW I813882B TW 109117779 A TW109117779 A TW 109117779A TW 109117779 A TW109117779 A TW 109117779A TW I813882 B TWI813882 B TW I813882B
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resin layer
less
polyimide resin
laminated substrate
base material
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TW109117779A
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TW202106509A (en
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川崎周馬
長尾洋平
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日商Agc股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10018Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising only one glass sheet
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/08Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/10Removing layers, or parts of layers, mechanically or chemically
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/10Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/26Polymeric coating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Ceramic Capacitors (AREA)

Abstract

本發明係關於一種積層基板,其具備玻璃製之支持基材、與配置於上述支持基材上之聚醯亞胺樹脂層,且於上述聚醯亞胺樹脂層之與上述支持基材相反側之表面上,長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,且高度為5 μm以下之凸部之數量為0.60個/cm2 ,長邊長度為3~1000 μm,短邊長度為20 μm以下,且深度為1 μm以下之凹部之數量為0.15個/cm2 以下。The present invention relates to a laminated substrate having a glass supporting base material and a polyimide resin layer disposed on the supporting base material, and the polyimide resin layer is on the opposite side to the supporting base material. On the surface, the number of protrusions with a long side length of 3 μm or more and less than 50 μm, a short side length of less than 50 μm, and a height of less than 5 μm is 0.60/cm 2 , and the long side length is 3 to 1000 μm, the short side length is 20 μm or less, and the number of recesses with a depth of 1 μm or less is 0.15/ cm2 or less.

Description

積層基板、電子裝置之製造方法、及積層基板之製造方法Manufacturing method of laminated substrate, electronic device, and manufacturing method of laminated substrate

本發明係關於一種積層基板、電子裝置之製造方法、及積層基板之製造方法。The present invention relates to a laminated substrate, a manufacturing method of an electronic device, and a manufacturing method of a laminated substrate.

製造如太陽能電池;液晶面板(LCD,Liquid Crystal Display);有機EL顯示裝置(OLED,OrganicLight-Emitting Diode);感測電磁波、X射線、紫外線、可見光線、紅外線等之接收感測器面板;等電子裝置時,如專利文獻1所記載,揭示有一種使用聚醯亞胺樹脂層作為基板之形態。聚醯亞胺樹脂層以設置於玻璃基板上之積層基板之狀態使用,並將積層基板提供於製造電子裝置。形成電子裝置後,將聚醯亞胺樹脂層與玻璃基板分離。 [先前技術文獻] [專利文獻]Manufacturing such as solar cells; LCD panels (LCD, Liquid Crystal Display); organic EL display devices (OLED, Organic Light-Emitting Diode); receiving sensor panels that sense electromagnetic waves, X-rays, ultraviolet rays, visible light, infrared rays, etc.; etc. In the case of electronic devices, as described in Patent Document 1, a form using a polyimide resin layer as a substrate is disclosed. The polyimide resin layer is used in the state of a laminated substrate provided on a glass substrate, and the laminated substrate is provided for manufacturing electronic devices. After forming the electronic device, the polyimide resin layer is separated from the glass substrate. [Prior technical literature] [Patent Document]

[專利文獻1]日本專利特開2015-104843號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2015-104843

[發明所欲解決之問題][Problem to be solved by the invention]

近年來,謀求進一步提高有機電致發光(EL)顯示裝置所代表之電子裝置之耐久性。 本發明者等人對如專利文獻1所記載之使用具備玻璃製之支持基材與聚醯亞胺樹脂層之積層基板,並於聚醯亞胺樹脂層上形成電子裝置用構件所得之電子裝置之性能進行研討時發現,就耐久性尚有進一步改善之餘地。 本發明之目的在於提供一種可製造種耐久性優良之電子裝置(例如有機EL顯示裝置)且具備聚醯亞胺樹脂層之積層基板。 又,本發明之目的亦在於,提供一種電子裝置之製造方法及積層基板之製造方法。 [解決問題之技術手段]In recent years, there has been an effort to further improve the durability of electronic devices represented by organic electroluminescence (EL) display devices. The inventors of the present invention used a laminated substrate having a glass support base material and a polyimide resin layer as described in Patent Document 1, and formed an electronic device using a member for an electronic device on the polyimide resin layer. When studying its performance, it was found that there is room for further improvement in terms of durability. An object of the present invention is to provide a laminated substrate having a polyimide resin layer that can produce an electronic device with excellent durability (such as an organic EL display device). Furthermore, another object of the present invention is to provide a method of manufacturing an electronic device and a method of manufacturing a laminated substrate. [Technical means to solve problems]

本發明者等人積極研討,結果發現可藉由以下構成達成上述目的。The inventors of the present invention actively studied and found that the above object can be achieved by the following configuration.

(1)一種積層基板,其具備玻璃製之支持基材、與配置於支持基材上之聚醯亞胺樹脂層,且於聚醯亞胺樹脂層之與支持基材相反側之表面上, 長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,且高度為5 μm以下之凸部之數量為0.60個/cm2 以下。 長邊長度為3~1000 μm,短邊長度為20 μm,且深度為1 μm以下之凹部之數量為0.15個/cm2 以下。 (2)如(1)記載之積層基板,其中凸部中,長邊長度為10 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下,且包含Na及Cl之至少1種元素之第1凸部之數量為0.15個/cm2 以下。 (3)如(1)或(2)記載之積層基板,其中凸部中,長邊長度為3 μm以上且未達20 μm,短邊長度未達20 μm,高度為5 μm以下,且包含Si及Al之至少1種元素之第2凸部之數量為0.25個/cm2 以下。 (4)如(3)記載之積層基板,其中凸部中,第1凸部及第2凸部以外之凸部,即長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下之第3凸部之數量為0.30個/cm2 以下。 (5)如(1)~(4)中任一項記載之積層基板,其中凸部之數量為0.20個/cm2 以下。 (6)如(1)~(5)中任一項記載之積層基板,其中凹部之數量為0.07個/cm2 以下。 (7)一種電子裝置之製造方法,其具備如下步驟:於(1)~(6)中任一項記載之積層基板之聚醯亞胺樹脂層之與支持基材相反側之表面上,形成電子裝置用構件,而獲得附電子裝置用構件之積層基板的構件形成步驟;及 自附電子裝置用構件之積層基板,獲得具有聚醯亞胺樹脂層及電子裝置用構件之電子裝置的分離步驟。 (8)一種積層基板之製造方法,其係(1)~(6)中任一項記載之積層基板之製造方法,且 將薄膜狀之聚醯亞胺樹脂層與支持基材貼合,而製造積層基板。 (9)如(8)記載之積層基板之製造方法,其中將具備薄膜狀之聚醯亞胺樹脂層、與配置於聚醯亞胺樹脂層之一表面上之保護膜的積層薄膜與支持基材貼合,獲得依序配置有支持基材、聚醯亞胺樹脂層及保護膜之積層體,並將保護膜自積層體剝離,而製造積層基板。 [發明之效果](1) A laminated substrate having a glass supporting base material and a polyimide resin layer disposed on the supporting base material, and on the surface of the polyimide resin layer opposite to the supporting base material, The number of protrusions with a long side length of 3 μm or more and less than 50 μm, a short side length of less than 50 μm, and a height of 5 μm or less is 0.60/cm 2 or less. The long side length is 3 to 1000 μm, the short side length is 20 μm, and the number of recesses with a depth of 1 μm or less is 0.15/cm 2 or less. (2) The laminated substrate according to (1), wherein the long side length of the convex portion is 10 μm or more and less than 50 μm, the short side length is less than 50 μm, and the height is 1 μm or less, and contains Na and Cl The number of first convex parts of at least one element is 0.15/cm 2 or less. (3) The laminated substrate as described in (1) or (2), wherein the protruding portion has a long side length of 3 μm or more and less than 20 μm, a short side length of less than 20 μm, and a height of 5 μm or less, and includes The number of second convex parts of at least one element consisting of Si and Al is 0.25 pieces/cm 2 or less. (4) The laminated substrate according to (3), wherein among the convex portions, the length of the convex portions other than the first convex portion and the second convex portion is 3 μm or more and less than 50 μm, and the short side length is less than 50 μm. 50 μm, and the number of third convex parts with a height of 1 μm or less is 0.30/ cm2 or less. (5) The laminated substrate according to any one of (1) to (4), wherein the number of protrusions is 0.20/cm 2 or less. (6) The laminated substrate according to any one of (1) to (5), wherein the number of recessed portions is 0.07/cm 2 or less. (7) A method of manufacturing an electronic device, which includes the step of forming a A member forming step for obtaining a laminated substrate with a member for an electronic device and a laminated substrate with a member for an electronic device; and a separation step for obtaining an electronic device having a polyimide resin layer and a member for an electronic device from the laminated substrate with the member for an electronic device. . (8) A method for manufacturing a laminated substrate, which is the method for manufacturing a laminated substrate according to any one of (1) to (6), wherein a film-like polyimide resin layer is bonded to a supporting base material, and Manufacturing of laminated substrates. (9) The method for manufacturing a laminated substrate according to (8), wherein a laminated film including a film-like polyimide resin layer and a protective film disposed on one surface of the polyimide resin layer and a support base are used The materials are bonded together to obtain a laminated body in which the supporting base material, the polyimide resin layer and the protective film are arranged in sequence, and the protective film is peeled off from the laminated body to produce a laminated substrate. [Effects of the invention]

根據本發明,可提供一種能製造耐久性優良之電子裝置(例如有機EL顯示裝置)之具備聚醯亞胺樹脂層之積層基板。 又,根據本發明,可提供一種電子裝置之製造方法及積層基板之製造方法。According to the present invention, it is possible to provide a laminated substrate having a polyimide resin layer that can produce an electronic device with excellent durability (for example, an organic EL display device). Furthermore, according to the present invention, a method of manufacturing an electronic device and a method of manufacturing a laminated substrate can be provided.

以下,參照圖式,針對本發明之實施形態進行說明。但,以下之實施形態係用以說明本發明之例示者,本發明不限於以下所示之實施形態。另,可不脫離本發明之範圍,對以下之實施形態加入各種變化及置換。 使用「~」表示之數值範圍意指將「~」前後所記載之數值作為下限值及上限值包含之範圍。Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the following embodiments are examples for explaining the present invention, and the present invention is not limited to the embodiments shown below. In addition, various changes and substitutions can be made to the following embodiments without departing from the scope of the present invention. The numerical range expressed by "~" means the range including the values written before and after "~" as the lower limit and upper limit.

作為本發明之積層基板之特徵點,可例舉調整聚醯亞胺樹脂層表面之特定形狀之凸部及凹部之數量之點。 本發明者等人發現,使用專利文獻1所記載之先前之積層基板製造電子裝置時,作為致使所得之電子裝置之耐久性較差之原因,與聚醯亞胺樹脂層表面之特定形狀之凸部及凹部有關。製造有機EL顯示裝置等電子裝置時,藉由濺鍍等形成薄層,但此時,若於聚醯亞胺樹脂層上存在特定形狀之凸部及凹部,則無法形成均一之層,而易成為缺陷,結果,致使所得之電子裝置之性能較差。因此,藉由調整上述凸部及凹部之數量,可獲得期望之效果。A characteristic feature of the laminated substrate of the present invention is the ability to adjust the number of protrusions and recesses of a specific shape on the surface of the polyimide resin layer. The present inventors discovered that when an electronic device was manufactured using the conventional laminated substrate described in Patent Document 1, the reason why the resulting electronic device had poor durability was related to the specific shape of the convex portion on the surface of the polyimide resin layer. related to the concavity. When manufacturing electronic devices such as organic EL display devices, thin layers are formed by sputtering, etc. However, at this time, if there are convex portions and concave portions of specific shapes on the polyimide resin layer, a uniform layer cannot be formed and it is easy to form a thin layer. become defects, resulting in poor performance of the resulting electronic device. Therefore, by adjusting the number of the above-mentioned convex portions and concave portions, the desired effect can be obtained.

<積層基板> [積層基板之第1例] 圖1係模式性顯示本發明之實施形態之積層基板之第1例之剖視圖。 第1例之積層基板10具備玻璃製之支持基材12、與配置於支持基材12上之聚醯亞胺樹脂層14。 圖1中,聚醯亞胺樹脂層14之面積小於支持基材12之表面12a,而未設置於支持基材12之表面12a全域,但不限於該形態,亦可於支持基材12之表面12a全域配置聚醯亞胺樹脂層14。<Laminated substrate> [Example 1 of built-up substrate] FIG. 1 is a cross-sectional view schematically showing a first example of a laminated substrate according to the embodiment of the present invention. The laminated substrate 10 of the first example includes a glass supporting base material 12 and a polyimide resin layer 14 arranged on the supporting base material 12 . In FIG. 1 , the area of the polyimide resin layer 14 is smaller than the surface 12 a of the supporting base material 12 , and is not disposed on the entire surface 12 a of the supporting base material 12 . However, it is not limited to this form, and may also be provided on the surface of the supporting base material 12 . The polyimide resin layer 14 is arranged over the entire area of 12a.

支持基材12為支持聚醯亞胺樹脂層14之構件,作為補強聚醯亞胺樹脂層14之補強板發揮功能。又,支持基材12亦作為搬送積層基板10時之搬送基板發揮功能。 於積層基板10中,若對剝離支持基材12與聚醯亞胺樹脂層14之方向施加力,則分離成支持基材12與聚醯亞胺樹脂層14。 雖於下文詳述,但聚醯亞胺樹脂層14為用以製造電子裝置所用之基板。即,於聚醯亞胺樹脂層14之表面14a,形成有構成電子裝置之電晶體、線圈及電阻等電子元件以及信號線等。The supporting base material 12 is a member that supports the polyimide resin layer 14 and functions as a reinforcing plate that reinforces the polyimide resin layer 14 . In addition, the support base material 12 also functions as a transportation substrate when the laminated substrate 10 is transported. In the laminated substrate 10 , when a force is applied in a direction in which the support base material 12 and the polyimide resin layer 14 are peeled off, the support base material 12 and the polyimide resin layer 14 are separated. Although described in detail below, the polyimide resin layer 14 is a substrate used for manufacturing electronic devices. That is, on the surface 14a of the polyimide resin layer 14, electronic components such as transistors, coils, resistors, and signal lines constituting the electronic device are formed.

圖2係本發明之實施形態之積層基板10中之聚醯亞胺樹脂層14之表面14a之放大剖視圖。 於聚醯亞胺樹脂層14之表面14a,圖2所示之長邊之長度為3 μm以上且未達50 μm,短邊之長度未達50 μm,且高度為5 μm以下之凸部16之數量為0.60個/cm2 以下。另,作為凸部16之短邊長度及高度之下限,可例舉超0 μm。又,作為後述之第1凸部~第3凸部之短邊長度及高度之下限,亦可例舉超0 μm。 其中,基於可製造耐久性更優良之電子裝置之點(以下,亦簡稱為「本發明之效果更佳之點」),凸部16之數量較佳為0.20個/cm2 以下。作為下限,可例舉0.001個/cm2 。 另,個/cm2 表示聚醯亞胺樹脂層14之表面14a之每1 cm2 之凸部之數量。 作為上述凸部16之數量之算出方法,首先,使用Orbotech公司製離線缺陷檢查系統(FPI-6000系列)(型號:FPI6090D),取得聚醯亞胺樹脂層14之表面14a全域之所有缺陷之圖像資料及座標資料。接著,根據取得之資料算出缺陷之長邊長度及短邊長度。其後,就所有缺陷,以Olympus公司製顯微鏡(OLE4100)進行觀察,根據與平坦部之差量算出缺陷之高度。其後,根據所得之各缺陷之長邊長度、短邊長度及高度之資料,算出特定範圍內之凸部之數量。FIG. 2 is an enlarged cross-sectional view of the surface 14a of the polyimide resin layer 14 in the laminated substrate 10 according to the embodiment of the present invention. On the surface 14a of the polyimide resin layer 14, the length of the long side shown in Figure 2 is 3 μm or more and less than 50 μm, the length of the short side is less than 50 μm, and the height is 5 μm or less. The quantity is less than 0.60 pieces/ cm2 . In addition, as the lower limit of the short side length and height of the convex portion 16, for example, it exceeds 0 μm. In addition, the lower limit of the short side length and height of the first to third convex portions described below may be, for example, over 0 μm. Among them, the number of convex portions 16 is preferably 0.20 pcs/cm 2 or less in order to produce an electronic device with better durability (hereinafter, also referred to as “the aspect with better effects of the present invention”). An example of the lower limit is 0.001 pieces/cm 2 . In addition, pieces/cm 2 represents the number of convex portions per 1 cm 2 on the surface 14a of the polyimide resin layer 14. As a method of calculating the number of the above-mentioned convex portions 16, first, an offline defect inspection system (FPI-6000 series) manufactured by Orbotech (Model: FPI6090D) is used to obtain a map of all defects in the entire surface 14a of the polyimide resin layer 14. Image data and coordinate data. Then, calculate the long side length and short side length of the defect based on the obtained data. Thereafter, all defects were observed with a microscope (OLE4100) manufactured by Olympus Corporation, and the height of the defects was calculated based on the difference from the flat portion. Then, based on the obtained data of the long side length, short side length and height of each defect, the number of convex parts within a specific range is calculated.

另,基於圖3,針對凸部16之長邊長度及短邊長度進行說明。 圖3係自聚醯亞胺樹脂層14之表面14a之法線方向觀察凸部16之圖。圖3中,凸部16為橢圓形狀。 接著,如圖3所示,將外切於凸部16之外周之平行之2條切線中,以切線距離最大之方式選擇之平行的2條切線之距離設為長邊長度L,將與給定長度L之平行之2條切線正交,且外切於凸部16之外周之平行的2條切線中,以切線間距離最大之方式選擇之平行的2條切線之切線間距離設為短邊長度S。 另,圖3中,自聚醯亞胺樹脂層14之表面14a之法線方向觀察時之凸部16之形狀為橢圓形狀,但凸部16不限於該形態,亦可為正圓狀、多角形狀、無固定形狀。In addition, the length of the long side and the length of the short side of the convex portion 16 will be described based on FIG. 3 . FIG. 3 is a view of the convex portion 16 viewed from the normal direction of the surface 14 a of the polyimide resin layer 14 . In Fig. 3, the convex portion 16 has an elliptical shape. Next, as shown in FIG. 3 , among the two parallel tangent lines circumscribing the outer circumference of the convex portion 16 , the distance between the two parallel tangent lines selected so as to maximize the tangent distance is set as the long side length L, and the given Among the two parallel tangent lines of a fixed length L that are orthogonal and circumscribe the outer circumference of the convex portion 16, the distance between the tangent lines of the two parallel tangent lines is selected in such a way that the distance between the tangent lines is the largest and is set to be the shortest. Side length S. In addition, in FIG. 3 , the shape of the convex portion 16 when viewed from the normal direction of the surface 14 a of the polyimide resin layer 14 is an elliptical shape, but the convex portion 16 is not limited to this shape, and may also be a perfect circle or a polygonal shape. Shape, no fixed shape.

又,就凸部16所含之元素,可使用SEM-EDX(掃描型電子顯微鏡/能量分散型X射線分光法)測定。即,可以SEM觀察聚醯亞胺樹脂層14之表面14a之特定之凸部16,以EDX特定該凸部16所含之元素。 作為凸部16所含之元素之具體例,可例舉C、O、Si、Al、Na、Cl、Fe、S、Mg、Ca、Ti、Zn、Cr、Ni及Cu。 另,聚醯亞胺樹脂層14本身亦包含C及O元素,但凸部16中是否包含C及O元素係與凸部16以外之位置之聚醯亞胺樹脂層14之C及O之含量進行比較而檢測。In addition, the elements contained in the convex portions 16 can be measured using SEM-EDX (scanning electron microscope/energy dispersive X-ray spectrometry). That is, the specific convex portion 16 on the surface 14a of the polyimide resin layer 14 can be observed by SEM, and the elements contained in the convex portion 16 can be specified by EDX. Specific examples of elements contained in the convex portions 16 include C, O, Si, Al, Na, Cl, Fe, S, Mg, Ca, Ti, Zn, Cr, Ni, and Cu. In addition, the polyimide resin layer 14 itself also contains C and O elements, but whether the protrusions 16 contain C and O elements is related to the C and O content of the polyimide resin layer 14 at locations other than the protrusions 16 Test by comparison.

基於使本發明之效果更佳之點,上述凸部中,長邊長度為10 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下,且包含Na及Cl之至少1種元素之第1凸部(以下,亦簡稱為「第1凸部」)之數量較佳為0.15個/cm2 以下,更佳為0.10個/cm2 以下,更佳為0.07個/cm2 以下,進而更佳為0.05個/cm2 以下。作為下限,可例舉0.001個/cm2 。 雖第1凸部產生之原因詳情不明,但根據所含之元素之種類,推測係來源於人體之汗液者。 第1凸部中亦可包含Na及Cl以外之元素,可例舉例如C及O。In order to make the effect of the present invention better, the long side length of the above-mentioned convex part is 10 μm or more and less than 50 μm, the short side length is less than 50 μm, the height is 1 μm or less, and at least 1 of Na and Cl is included. The number of the first convex parts (hereinafter, also referred to as "first convex parts") of the first element is preferably 0.15 pieces/cm 2 or less, more preferably 0.10 pieces/cm 2 or less, and more preferably 0.07 pieces/cm 2 or less, more preferably 0.05 pieces/cm 2 or less. An example of the lower limit is 0.001 pieces/cm 2 . Although the details of the cause of the first convex part are unknown, based on the types of elements contained, it is speculated that it comes from human sweat. The first convex portion may also contain elements other than Na and Cl, and examples thereof include C and O.

基於本發明之效果更佳之點,上述凸部中,長邊長度為3 μm以上且未達20 μm,短邊長度未達20 μm,高度為5 μm以下,且包含Si及Al之至少1種元素之第2凸部(以下,亦簡稱為「第2凸部」)之數量較佳為0.25個/cm2 以下,更佳為0.20個/cm2 以下,進而較佳為0.15個/cm2 以下,尤佳為0.10個/cm2 以下,進而更佳為0.07個/cm2 以下。作為下限,可例舉0.001個/cm2 。 雖第2凸部產生之原因詳情不明,但根據所含元素之種類,推測係來源於玻璃製之支持基材者。 第2凸部中亦可包含Si及Al以外之元素,可例舉例如C及O。Based on the fact that the effect of the present invention is better, the long side length of the above-mentioned convex portion is 3 μm or more and less than 20 μm, the short side length is less than 20 μm, the height is 5 μm or less, and contains at least one kind of Si and Al. The number of the second convex parts of the element (hereinafter also referred to as "second convex parts") is preferably 0.25 pieces/cm 2 or less, more preferably 0.20 pieces/cm 2 or less, and still more preferably 0.15 pieces/cm 2 or less, preferably 0.10 pieces/cm 2 or less, still more preferably 0.07 pieces/cm 2 or less. An example of the lower limit is 0.001 pieces/cm 2 . Although the details of the cause of the formation of the second convex portion are unknown, based on the types of elements contained, it is presumed that they originate from the glass support base material. The second convex portion may also contain elements other than Si and Al, and examples thereof include C and O.

基於本發明之效果更佳之點,上述凸部中,第1凸部及第2凸部以外之凸部,即長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下之第3凸部(以下,亦簡稱為「第3凸部」)之數量較佳為0.30個/cm2 以下,更佳為0.25個/cm2 以下,進而更佳為0.20個/cm2 以下,尤佳為0.15個/cm2 以下。 如上所述,第3凸部為不符合第1凸部及第2凸部之任一者之特定大小之凸部。 作為第3凸部之數量之下限,可例舉0.001個/cm2 。 作為第3凸部中所含之元素之種類之具體例,可例舉Ca、Fe、Ti、Cr、Ni及Cu,第3凸部較佳包含上文所例舉之元素中之至少一者。 雖第3凸部產生之原因詳情不明,但推測為環境中包含上文所例示之元素之微粒、SUS等之金屬粉。Based on the better effect of the present invention, among the above-mentioned convex parts, the convex parts other than the first convex part and the second convex part, that is, the long side length is 3 μm or more and less than 50 μm, and the short side length is less than 50 μm. The number of third convex parts with a height of 1 μm or less (hereinafter, also referred to as "third convex parts") is preferably 0.30 pieces/cm 2 or less, more preferably 0.25 pieces/cm 2 or less, and still more preferably 0.20 pieces/cm 2 or less. No./cm2 or less, preferably no more than 0.15/ cm2 . As described above, the third convex portion is a convex portion that does not meet the specific size of any of the first convex portion and the second convex portion. An example of the lower limit of the number of third convex portions is 0.001 pieces/cm 2 . Specific examples of the types of elements contained in the third convex portion include Ca, Fe, Ti, Cr, Ni, and Cu. The third convex portion preferably contains at least one of the elements listed above. . Although the details of the cause of the formation of the third convex portion are unknown, it is presumed that the environment contains fine particles of the elements listed above and metal powder such as SUS.

於聚醯亞胺樹脂層14之表面14a中,圖2所示之長邊長度為3~1000 μm,短邊長度為20 μm以下,且深度為1 μm以下之凹部18之數量為0.15個/cm2 。另,作為凹部18之短邊長度及深度之下限,可例舉超0 μm。 其中,基於本發明之效果更佳之點,凹部18之數量較佳為0.07個/cm2 以下。作為下限,可例舉0.001個/cm2 。 作為上述凹部18之數量之算出方法,使用Orbotech公司製離線缺陷檢查系統(FPI-6000系列(型號:FPI609D)),取得聚醯亞胺樹脂層14之表面14a全域之所有缺陷之圖像資料及座標資料。接著,根據取得之資料,算出缺陷之長邊長度及短邊長度。其後,就所有缺陷,以Olympus公司製雷射顯微鏡(OLE4100)進行觀察,根據與平坦部之差量算出缺陷之深度。其後,根據所得各缺陷之長邊長度、短邊長度及深度之資料,算出特定範圍內之凹部之數量。In the surface 14a of the polyimide resin layer 14, the long side length shown in Figure 2 is 3 to 1000 μm, the short side length is 20 μm or less, and the number of recessed portions 18 with a depth of 1 μm or less is 0.15/ cm 2 . In addition, as the lower limit of the short side length and depth of the recessed portion 18, for example, it exceeds 0 μm. Among them, in view of the better effect of the present invention, the number of recessed portions 18 is preferably 0.07 pieces/cm 2 or less. An example of the lower limit is 0.001 pieces/cm 2 . As a method for calculating the number of recessed portions 18, an offline defect inspection system (FPI-6000 series (model: FPI609D) manufactured by Orbotech) is used to obtain image data of all defects in the entire surface 14a of the polyimide resin layer 14 and Coordinate data. Then, based on the obtained data, calculate the long side length and short side length of the defect. Thereafter, all defects were observed with a laser microscope (OLE4100) manufactured by Olympus Corporation, and the depth of the defects was calculated based on the difference from the flat portion. Then, based on the obtained data of the long side length, short side length and depth of each defect, the number of recesses within a specific range is calculated.

凹部18之長邊長度及短邊長度藉由與上述之凸部16之長邊長度及短邊長度同樣之程序而定義。 具體而言,將外切於凹部18之外周之平行之2條切線中,以切線間距離最大之方式選擇之平行的2條切線之距離設為長邊長度L,將與給定長度L之平行的2條切線正交,且外切於凹部18之外周之平行的2條切線中,以切線間距離最大之方式選擇之平行的2條切線之切線間距離設為短邊長度S。 另,自聚醯亞胺樹脂層14之表面14a之法線方向觀察時之凹部18之形狀未特別限制,亦可為正圓狀、橢圓形狀、多角形狀、無固定形狀。The length of the long side and the length of the short side of the recessed portion 18 are defined by the same procedure as the length of the long side and the length of the short side of the convex portion 16 described above. Specifically, the distance between the two parallel tangent lines circumscribed around the outer circumference of the recessed portion 18 is selected so as to maximize the distance between the tangent lines as the long side length L. Among the two parallel tangent lines that are orthogonal and circumscribe the outer circumference of the recessed portion 18, the distance between the two parallel tangent lines is selected so that the distance between the tangent lines is the largest and is set as the short side length S. In addition, the shape of the recessed portion 18 when viewed from the normal direction of the surface 14a of the polyimide resin layer 14 is not particularly limited, and may be a perfect circle, an ellipse, a polygon, or any other shape.

較佳為於聚醯亞胺樹脂層14之表面14a中不存在大於凸部16之凸部。大於凸部16之凸部意指長邊長度為50 μm以上,或短邊長度為50 μm以上,或高度超5 μm之凸部。 又,較佳為於聚醯亞胺樹脂層14之表面14a中不存在大於凹部18之凹部。大於凹部18之凹部意指長邊長度超1000 μm,或短邊之長度超20 μm,或深度超1 μm之凹部。It is preferable that there is no convex part larger than the convex part 16 on the surface 14a of the polyimide resin layer 14. A convex part larger than the convex part 16 means a convex part whose long side length is more than 50 μm, or whose short side length is more than 50 μm, or whose height exceeds 5 μm. Moreover, it is preferable that there is no recessed part larger than the recessed part 18 in the surface 14a of the polyimide resin layer 14. A recess larger than the recess 18 means a recess whose long side length exceeds 1000 μm, or whose short side length exceeds 20 μm, or whose depth exceeds 1 μm.

[積層基板之第1例之製造方法] 作為製造第1例之積層基板之方法,只要形成成為上述之特定凸部及凹部之數量的聚醯亞胺樹脂層則無特別限制,但較佳為使聚醯亞胺樹脂層積層於支持基材之表面上之方法。 另,較佳為使聚醯亞胺樹脂層積層於支持基材之表面上之前,於支持基材之表面上塗佈眾所周知之矽烷偶合劑,其後,於塗佈有矽烷偶合劑之支持基材之表面上積層聚醯亞胺樹脂層。[Manufacturing method of the first example of the laminated substrate] The method of manufacturing the laminated substrate of the first example is not particularly limited as long as the polyimide resin layer is formed to have the above-mentioned specific number of convex portions and concave portions. However, it is preferable that the polyimide resin layer is laminated on a support base. The surface method of the material. In addition, it is preferable to apply a well-known silane coupling agent to the surface of the supporting base material before laminating the polyimide resin layer on the surface of the supporting base material, and then, to coat the supporting base with the silane coupling agent. A polyimide resin layer is laminated on the surface of the material.

又,作為積層基板之製造方法,更佳為將薄膜狀之聚醯亞胺樹脂層與支持基材貼合,而製造積層基板之方法,進而更佳為如下之方法:將具備薄膜狀之聚醯亞胺樹脂層與配置於聚醯亞胺樹脂層之一表面上之保護膜之積層薄膜與支持基材貼合,獲得依序配置有支持基材、聚醯亞胺樹脂層及保護膜之積層體,並將保護膜自積層體剝離,而製造積層基板(以下,亦稱為「方法X」)。 尤其,使用保護膜之方法中,由於由保護膜保護聚醯亞胺樹脂層之與支持基材相反側之表面,故於製造積層基板時,抑制異物附著於聚醯亞胺樹脂層之與支持基材相反側之表面,或產生表面之損傷,結果,容易獲得期望之積層基板。 將薄膜狀之聚醯亞胺樹脂層與支持基材貼合時,基於生產性優良之點,較佳以捲對捲(roll to roll)方式實施。Furthermore, as a method of manufacturing a laminated substrate, a method of laminating a film-shaped polyimide resin layer and a supporting base material to manufacture a laminated substrate is more preferred, and further more preferred is a method of laminating a film-shaped polyimide resin layer to a supporting base material. The laminated film of the imine resin layer and the protective film disposed on one surface of the polyimide resin layer is bonded to the supporting base material to obtain a supporting base material, polyimide resin layer and protective film arranged in sequence. The laminated body is peeled off from the laminated body to produce a laminated substrate (hereinafter also referred to as "Method X"). In particular, in the method of using a protective film, since the surface of the polyimide resin layer opposite to the support base material is protected by the protective film, foreign matter is suppressed from adhering to the polyimide resin layer and the support when manufacturing the laminated substrate. The surface on the opposite side of the base material may be damaged, and as a result, it is easy to obtain the desired laminated substrate. When laminating the film-like polyimide resin layer and the supporting base material, it is preferable to implement it in a roll-to-roll method in view of excellent productivity.

作為將凸部及凹部之數量調整為特定範圍內之方式,可例舉調整聚醯亞胺樹脂層之形成條件之方法,或對後述之積層基板實施清洗處理之方法。 另,較佳為對積層基板實施加熱處理,其後,對聚醯亞胺樹脂之與支持基材相反側之表面實施清洗處理。其中,較佳為以上述方法X獲得積層基板後,對積層基板實施加熱處理,其後,對聚醯亞胺樹脂層之與支持基材相反側之表面實施清洗處理。 藉由實施加熱處理,去除聚醯亞胺樹脂層中及表面上之揮發成分,而可抑制製造電子裝置時產生揮發成分。尤其,方法X中以捲對捲方式製造積層基板時,由於在貼合時無法提高溫度,揮發成分易殘留於聚醯亞胺樹脂層中,故較佳為實施上述加熱處理。 又,藉由清洗聚醯亞胺樹脂層之與支持基材相反側之表面,可去除可能成為凸部之異物或成為產生凹部之原因之異物。As a method of adjusting the number of convex portions and recessed portions within a specific range, there may be a method of adjusting the formation conditions of the polyimide resin layer, or a method of cleaning a laminated substrate described below. In addition, it is preferable to perform a heat treatment on the laminated substrate, and then perform a cleaning treatment on the surface of the polyimide resin opposite to the supporting base material. Among them, it is preferable to perform a heat treatment on the laminated substrate after obtaining the laminated substrate by the above-mentioned method By performing heat treatment, volatile components in the polyimide resin layer and on the surface are removed, thereby suppressing the generation of volatile components during the production of electronic devices. In particular, when the laminated substrate is manufactured in a roll-to-roll manner in Method In addition, by cleaning the surface of the polyimide resin layer on the opposite side to the supporting base material, foreign matter that may become convex portions or may cause concave portions can be removed.

另,作為方法X中使用之保護膜,較佳為可剝離之樹脂薄膜。 方法X中,剝離保護膜時,為了防止產生靜電,較佳使用離子化器等靜電去除裝置進行除電。若產生靜電,則有時異物會附著於聚醯亞胺樹脂層上,藉由使用靜電去除裝置可抑制上述異物之附著。 另,上文中,已敘述使用靜電去除裝置之方法,但亦可實施提高濕度(濕度:70%以上),而抑制產生靜電之方法。 藉由實施上述處理,尤其可減少上述之第1凸部或第3凸部之數量。In addition, as the protective film used in method X, a peelable resin film is preferred. In method When static electricity is generated, foreign matter may adhere to the polyimide resin layer. By using a static electricity removing device, the adhesion of the foreign matter can be suppressed. In addition, the method of using a static electricity removing device has been described above, but it is also possible to increase the humidity (humidity: 70% or more) to suppress the generation of static electricity. By performing the above process, the number of the above-mentioned first convex portions or third convex portions can be reduced.

實施上述加熱處理時,通常使用加熱裝置。將積層基板配置於加熱裝置時,較佳以於加熱裝置內,聚醯亞胺樹脂朝下之方式配置積層基板。藉由將聚醯亞胺樹脂層朝下配置,可抑制自加熱裝置內朝積層基板掉落之異物附著於聚醯亞胺樹脂層上。 藉由實施上述處理,尤其可減少上述之第1凸部~第3凸部之數量。When performing the above-mentioned heat treatment, a heating device is usually used. When disposing the laminated substrate in the heating device, it is preferable to dispose the laminated substrate in the heating device with the polyimide resin facing downward. By arranging the polyimide resin layer downward, foreign matter falling from the heating device toward the laminated substrate can be prevented from adhering to the polyimide resin layer. By performing the above process, the number of the above-mentioned first to third convex portions can be reduced.

又,作為使用之加熱裝置之具體例,可例舉熱風加熱裝置及紅外線加熱裝置。其中,使用熱風加熱裝置之情形時,有時異物亦因熱風而於聚醯亞胺樹脂之與支持基材相反側之表面移動,從而產生凹部,故基於減少凹部數量之點,較佳使用紅外線加熱裝置。Moreover, as a specific example of the heating device used, a hot air heating device and an infrared heating device can be mentioned. Among them, when a hot air heating device is used, foreign matter sometimes moves on the surface of the polyimide resin opposite to the supporting base material due to the hot air, causing concavities. Therefore, in order to reduce the number of concavities, it is better to use infrared rays. Heating device.

作為加熱處理之條件,加熱溫度較佳為450~550°C,加熱時間較佳為5分鐘~1小時,升溫速率較佳為1~100°C/min。As the conditions for the heat treatment, the heating temperature is preferably 450 to 550°C, the heating time is preferably 5 minutes to 1 hour, and the heating rate is preferably 1 to 100°C/min.

又,清洗聚醯亞胺樹脂層之與支持基材相反側之表面時,較佳使用刷子進行清洗。藉由實施上述處理,尤其可減少上述之第2凸部及第3凸部之數量。 作為清洗處理,可為乾清洗及濕清洗之任一種清洗,較佳為濕清洗。作為實施濕清洗時之洗滌劑之具體例,可例舉鹼水溶液。 濕清洗時,較佳使用刷子。作為使用之刷子之具體例,可例舉輥刷及盤刷。其中,使用輥刷之情形時,有時輥刷之刷毛末梢之末端部擦拭聚醯亞胺樹脂層之與支持基材相反側之表面,而產生凹部,故基於減少凹部數量之點,較佳使用盤刷。 使用刷子時之轉速未特別限制,但使用盤刷之情形時,可例舉300 rpm左右。In addition, when cleaning the surface of the polyimide resin layer on the opposite side to the supporting base material, it is preferable to use a brush for cleaning. By performing the above process, the number of the above-mentioned second convex portions and third convex portions can be reduced. The cleaning treatment may be either dry cleaning or wet cleaning, and wet cleaning is preferred. Specific examples of detergents used in wet cleaning include aqueous alkaline solutions. When cleaning wet, it is better to use a brush. Specific examples of brushes used include roller brushes and disc brushes. Among them, when a roller brush is used, the ends of the bristle tips of the roller brush may wipe the surface of the polyimide resin layer on the opposite side to the supporting base material, causing recesses. Therefore, in order to reduce the number of recesses, it is preferable. Use a disk brush. The rotation speed when using a brush is not particularly limited, but when using a disc brush, it can be about 300 rpm.

可一面搬送積層基板一面實施清洗處理。作為搬送速度,可例舉1~10 m/min。 清洗處理時,可藉由夾輥等固定機構固定積層基板。此時,基於減少凹部數量之點,較佳以固定機構不與聚醯亞胺樹脂層之與支持基材相反側之表面接觸之方式,固定積層基板。具體而言,較佳使用僅與支持基材接觸而固定積層基板之固定機構。 另,為了實施上述清洗處理,可對聚醯亞胺樹脂層之與支持基材相反側之表面實施電暈處理等親水化處理。藉由實施親水化處理,清洗效果提高。Cleaning can be performed while transporting the laminated substrate. As a conveyance speed, 1-10 m/min is mentioned, for example. During the cleaning process, the laminated substrate can be fixed by a fixing mechanism such as nip rollers. At this time, in order to reduce the number of recesses, it is preferable to fix the laminated substrate in such a manner that the fixing mechanism does not contact the surface of the polyimide resin layer opposite to the supporting base material. Specifically, it is preferable to use a fixing mechanism that only contacts the support base material to fix the laminated substrate. In order to perform the above-mentioned cleaning treatment, a hydrophilic treatment such as corona treatment may be performed on the surface of the polyimide resin layer opposite to the supporting base material. By implementing hydrophilic treatment, the cleaning effect is improved.

[積層基板之第2例] 圖4係模式性顯示本發明之實施形態之積層基板之第2例之剖視圖。另,圖4所示之第2例之積層基板10中,對與圖1所示之第1例之積層基板10同一之構成物標註同一符號,省略詳細之說明。 第2例之積層基板10與圖1所示之積層基板10相比,除了於支持基材12與聚醯亞胺樹脂層14間具有矽酮樹脂層13外,皆與圖1所示之積層基板10相同。[Example 2 of built-up substrate] FIG. 4 is a cross-sectional view schematically showing a second example of the laminated substrate according to the embodiment of the present invention. In addition, in the laminated substrate 10 of the second example shown in FIG. 4 , the same components as those of the laminated substrate 10 of the first example shown in FIG. 1 are denoted by the same reference numerals, and detailed descriptions are omitted. Compared with the laminated substrate 10 shown in FIG. 1 , the laminated substrate 10 of the second example is different from the laminated substrate 10 shown in FIG. 1 except that there is a silicone resin layer 13 between the supporting base material 12 and the polyimide resin layer 14 . The substrate 10 is the same.

第2例之積層基板10中,依序積層有支持基材12、矽酮樹脂層13、及聚醯亞胺樹脂層14。於支持基材12之表面12a設置有矽酮樹脂層13,於矽酮樹脂層13之表面13a設置有聚醯亞胺樹脂層14。雖矽酮樹脂層13與聚醯亞胺樹脂層14為相同之大小,但與支持基材12之表面12a相比更小。 第2例之積層基板10中,支持基材12及矽酮樹脂層13作為補強聚醯亞胺樹脂層14之補強板發揮功能。In the laminated substrate 10 of the second example, a supporting base material 12, a silicone resin layer 13, and a polyimide resin layer 14 are laminated in this order. A silicone resin layer 13 is provided on the surface 12a of the supporting base material 12, and a polyimide resin layer 14 is provided on the surface 13a of the silicone resin layer 13. Although the silicone resin layer 13 and the polyimide resin layer 14 have the same size, they are smaller than the surface 12 a of the supporting base material 12 . In the laminated substrate 10 of the second example, the supporting base material 12 and the silicone resin layer 13 function as reinforcing plates that reinforce the polyimide resin layer 14 .

對積層基板10實施加熱處理之情形時,較佳為使支持基材12與矽酮樹脂層13間之密著力大於矽酮樹脂層13與聚醯亞胺樹脂層14間之密著力。此可藉由以加熱處理,使支持基材12之羥基與矽樹脂層13之羥基鍵合等而產生。 其結果,若對剝離支持基材12與聚醯亞胺樹脂層14之方向施加力,則於矽酮樹脂層13與聚醯亞胺樹脂層14間發生剝離。藉此,可將聚醯亞胺樹脂層14分離。When the laminated substrate 10 is subjected to heat treatment, it is preferable that the adhesion force between the supporting base material 12 and the silicone resin layer 13 is greater than the adhesion force between the silicone resin layer 13 and the polyimide resin layer 14 . This can be produced by bonding the hydroxyl groups of the supporting base material 12 with the hydroxyl groups of the silicone resin layer 13 through heat treatment. As a result, when force is applied in the direction of peeling the support base material 12 and the polyimide resin layer 14, peeling occurs between the silicone resin layer 13 and the polyimide resin layer 14. Thereby, the polyimide resin layer 14 can be separated.

[積層基板之第2例之製造方法] 製造第2例之積層基板之方法較佳為於聚醯亞胺樹脂層之背面形成矽酮樹脂層之方法。具體而言,較佳為如下方法:將包含硬化性矽酮之硬化性組合物塗佈於薄膜狀之聚醯亞胺樹脂層之背面(與表面14a相反側),對所得之塗膜實施硬化處理獲得矽酮樹脂層後,於矽酮樹脂層之背面(與表面13a相反側之面)積層支持基材,從而製造積層基板。 更詳細而言,製造第2例之積層基板之方法至少具有如下步驟:將硬化性矽酮層形成於聚醯亞胺樹脂層之背面(與表面14a相反側之面),並於聚醯亞胺樹脂層之背面形成矽酮樹脂層之步驟(樹脂層形成步驟);及於矽酮樹脂層之背面(與表面13a相反側之面)積層支持基材之步驟(積層步驟)。以下,針對上述各步驟詳細敘述。[Manufacturing method of the second example of the laminated substrate] The method of manufacturing the laminated substrate of the second example is preferably a method of forming a silicone resin layer on the back side of the polyimide resin layer. Specifically, the following method is preferred: applying a curable composition containing curable silicone to the back surface (the side opposite to the surface 14a) of a film-like polyimide resin layer, and curing the resulting coating film. After the silicone resin layer is obtained through the treatment, a supporting base material is laminated on the back surface of the silicone resin layer (the side opposite to the surface 13a) to produce a laminated substrate. More specifically, the method of manufacturing the laminated substrate of the second example includes at least the following steps: forming a curable silicone layer on the back side of the polyimide resin layer (the side opposite to the surface 14a), and forming a curable silicone layer on the polyimide resin layer. A step of forming a silicone resin layer on the back side of the amine resin layer (resin layer forming step); and a step of laminating a supporting base material on the back side of the silicone resin layer (the side opposite to the surface 13a) (lamination step). Each of the above steps will be described in detail below.

樹脂層形成步驟係將硬化性矽酮層形成於聚醯亞胺樹脂層之背面,而於聚醯亞胺樹脂層之背面形成矽酮樹脂層之步驟。藉由本步驟,獲得依序具備聚醯亞胺樹脂層與矽酮樹脂層之附矽酮樹脂層之基板。 附矽酮樹脂層之基板可以於捲繞成捲狀之聚醯亞胺樹脂層之背面形成矽酮樹脂層後,再次捲繞成捲狀之所謂之捲對捲方式製造,從而生產效率優良。 本步驟中,為了於聚醯亞胺樹脂層之背面形成硬化性矽酮層,將上述之硬化性組合物塗佈於聚醯亞胺樹脂層之背面。接著,較佳對硬化性矽酮層實施硬化處理,藉此形成硬化層。 作為於聚醯亞胺樹脂層之背面塗佈硬化性組合物之方法之具體例,可例舉噴塗法、模塗法、旋塗法、浸漬塗佈法、輥塗法、棒塗法、網版印刷法及凹版印刷塗佈法。 接著,使塗佈於聚醯亞胺樹脂層之背面之硬化性矽酮硬化,形成矽酮樹脂層。The resin layer forming step is a step of forming a curable silicone layer on the back side of the polyimide resin layer, and forming a silicone resin layer on the back side of the polyimide resin layer. Through this step, a substrate with a silicone resin layer including a polyimide resin layer and a silicone resin layer in sequence is obtained. The substrate with the silicone resin layer can be manufactured by a so-called roll-to-roll method in which a silicone resin layer is formed on the back of a polyimide resin layer rolled into a roll and then rolled into a roll again, so that the production efficiency is excellent. In this step, in order to form a curable silicone layer on the back of the polyimide resin layer, the above-mentioned curable composition is coated on the back of the polyimide resin layer. Next, it is preferable to perform a hardening treatment on the curable silicone layer, thereby forming a hardened layer. Specific examples of the method for coating the curable composition on the back surface of the polyimide resin layer include spray coating, die coating, spin coating, dip coating, roll coating, rod coating, and mesh coating. plate printing method and gravure printing coating method. Then, the curable silicone coated on the back side of the polyimide resin layer is hardened to form a silicone resin layer.

用以形成矽酮樹脂層之硬化方法未特別限定,根據使用之硬化性矽酮之種類適當地實施最佳之處理。例如,使用縮合反應型矽酮及附加反應型矽酮之情形時,作為硬化處理,較佳為熱硬化處理。 熱硬化處理之條件係於聚醯亞胺樹脂層之耐熱性之範圍內實施,例如,熱硬化之溫度條件較佳為50~400°C,更佳為100~300°C。加熱時間較佳為10~300分鐘,更佳為20~120分鐘。 關於矽酮樹脂層13於下文進行說明。The curing method used to form the silicone resin layer is not particularly limited, and an optimal treatment is appropriately performed depending on the type of curable silicone used. For example, when condensation reaction type silicone and additional reaction type silicone are used, thermal hardening treatment is preferred as the hardening treatment. The conditions for the thermal hardening treatment are carried out within the range of the heat resistance of the polyimide resin layer. For example, the temperature conditions for thermal hardening are preferably 50 to 400°C, and more preferably 100 to 300°C. The heating time is preferably 10 to 300 minutes, more preferably 20 to 120 minutes. The silicone resin layer 13 will be described below.

積層步驟為於矽酮樹脂層之表面積層支持基材之步驟。作為將支持基材積層於矽酮樹脂層之背面上之方法之具體例,可例舉於常壓環境下在矽酮樹脂層之背面上重疊支持基材之方法。亦可視需要於矽樹脂層之背面上重疊支持基材後,使用輥或按壓件將支持基材壓接於矽酮樹脂層。藉由滾動或按壓之壓接,相對容易地去除混入至矽酮樹脂層與支持基材間之氣泡,因而較佳。 若利用真空層壓法或真空按壓法進行壓接,則可抑制氣泡之混入,且實現良好密著,因而較佳。藉由於真空下進行壓接,還具有即使於微小氣泡殘留之情形時,氣泡亦不易因加熱處理而成長之優點。 積層支持基材時,較佳為充分清洗與矽酮樹脂層接觸之支持基材之表面,而於清潔度較高之環境下進行積層。The laminating step is a step of laminating a supporting base material on the surface of the silicone resin layer. As a specific example of the method of laminating the support base material on the back surface of the silicone resin layer, a method of laminating the support base material on the back surface of the silicone resin layer under a normal pressure environment can be cited. If necessary, the supporting base material may be overlapped on the back side of the silicone resin layer, and then a roller or pressing member may be used to press the supporting base material to the silicone resin layer. Pressure bonding by rolling or pressing is preferred because it is relatively easy to remove air bubbles mixed between the silicone resin layer and the supporting base material. It is preferable to use the vacuum lamination method or the vacuum pressing method for pressure bonding because it can suppress the mixing of air bubbles and achieve good adhesion. By performing pressure bonding under vacuum, there is also the advantage that even if tiny bubbles remain, the bubbles are less likely to grow due to heat treatment. When laminating the supporting base material, it is preferable to fully clean the surface of the supporting base material that is in contact with the silicone resin layer, and to laminate the supporting base material in a relatively clean environment.

另,作為製造第2例之積層基板之方法,尤佳為如下方法:於具備薄膜狀之聚醯亞胺樹脂層與配置於聚醯亞胺樹脂層之一表面上之保護膜之積層薄膜之與保護膜相反側之表面,塗佈包含硬化性矽酮之硬化性組合物,並對所得之塗膜實施硬化處理,獲得矽酮樹脂層後,於矽樹脂層之背面積層支持基材,而獲得依序配置有支持基材、矽酮樹脂層、聚醯亞胺樹脂層及保護膜之積層體,並將保護膜自積層體剝離,而製造積層基板。使用如上所述之保護膜之方法中,由於以保護膜保護聚醯亞胺樹脂層之與支持基材相反側之表面,故製造積層基板時,抑制異物附著於聚醯亞胺樹脂層之與支持基材相反側之表面,或產生表面損傷,結果,容易獲得期望之積層基板。 矽酮樹脂層之製造方法及於矽酮樹脂層之背面積層支持基材之方法如上所述。 又,上文中使用之保護膜可例舉第1例中說明之形態,如第1例中所說明,剝離保護膜時,為了防止產生靜電,較佳使用離子化器等靜電去除裝置除電。 再者,與第1例同樣,較佳對積層基板實施加熱處理,其後,對聚醯亞胺樹脂層之與支持基材相反側之表面實施清洗處理。In addition, as a method of manufacturing the laminated substrate of the second example, the following method is particularly preferred: a laminated film having a film-like polyimide resin layer and a protective film disposed on one surface of the polyimide resin layer. The surface opposite to the protective film is coated with a curable composition containing curable silicone, and the resulting coating film is cured. After obtaining the silicone resin layer, a supporting base material is laminated on the back of the silicone resin layer. A laminated body in which a supporting base material, a silicone resin layer, a polyimide resin layer and a protective film are arranged in this order is obtained, and the protective film is peeled off from the laminated body to produce a laminated substrate. In the method using the protective film as described above, since the surface of the polyimide resin layer opposite to the supporting base material is protected by the protective film, adhesion of foreign matter to the polyimide resin layer is suppressed when manufacturing a laminated substrate. The surface on the opposite side of the supporting base material may be damaged, and as a result, the desired laminated substrate may be easily obtained. The method of manufacturing the silicone resin layer and the method of laminating the supporting substrate on the back side of the silicone resin layer are as described above. In addition, the protective film used above can be in the form described in the first example. As explained in the first example, in order to prevent the generation of static electricity when peeling off the protective film, it is preferable to use a static electricity removing device such as an ionizer to eliminate static electricity. In addition, as in the first example, it is preferable to perform a heat treatment on the laminated substrate, and then perform a cleaning treatment on the surface of the polyimide resin layer opposite to the supporting base material.

以下,針對構成積層基板10之支持基材12、聚醯亞胺樹脂層14及矽樹脂層13詳細敘述。Hereinafter, the supporting base material 12 , the polyimide resin layer 14 and the silicon resin layer 13 constituting the laminated substrate 10 will be described in detail.

<支持基材> 玻璃製之支持基材12為支持並補強聚醯亞胺樹脂層14之構件,且作為搬送基板發揮功能。支持基材12以例如玻璃板構成。 作為玻璃之種類,較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高二氧化矽玻璃、以其他之氧化矽為主成分之氧化物系玻璃。作為氧化物系玻璃,較佳為利用氧化物換算之氧化矽含量為40~90質量%之玻璃。 作為玻璃,更具體而言,可例舉包含無鹼硼矽酸玻璃之玻璃板(AGC股份有限公司製,商品名「AN100」)。 作為玻璃板之製造方法,可例舉通常將玻璃原料熔融,並將熔融玻璃成形為板狀之方法。此種成形方法可為一般者,可例舉例如浮式法、熔融法及流孔下引法。<Support base material> The glass supporting base material 12 is a member that supports and reinforces the polyimide resin layer 14 and functions as a transport substrate. The supporting base material 12 is made of, for example, a glass plate. As the type of glass, preferred are alkali-free borosilicate glass, borosilicate glass, soda-lime glass, high silica glass, and other oxide-based glasses containing silica as the main component. As the oxide-based glass, glass having a silicon oxide content of 40 to 90% by mass in terms of oxide is preferred. More specifically, as glass, a glass plate containing alkali-free borosilicate glass (manufactured by AGC Co., Ltd., trade name "AN100") can be cited. An example of a method for producing a glass plate is a method of generally melting a glass raw material and shaping the molten glass into a plate shape. Such forming methods may be general ones, and examples thereof include float method, melting method, and orifice downdraft method.

支持基材12之厚度可厚於或薄於聚醯亞胺樹脂層14。基於積層基板10之處理性之點,較佳使支持基材12之厚度厚於聚醯亞胺樹脂層14。 由於支持基材12係要求作為補強板及搬送基板之功能者,故較佳為非可撓性。因此,支持基材12之厚度較佳為0.3 mm以上,更佳為0.5 mm以上。另一方面,支持基材12之厚度較佳為1.0 mm以下。The thickness of the supporting substrate 12 may be thicker or thinner than the polyimide resin layer 14 . Based on the rationality of the laminated substrate 10 , it is preferable that the thickness of the supporting base material 12 is thicker than that of the polyimide resin layer 14 . Since the supporting base material 12 is required to function as a reinforcing plate and a transport substrate, it is preferably non-flexible. Therefore, the thickness of the supporting base material 12 is preferably 0.3 mm or more, and more preferably 0.5 mm or more. On the other hand, the thickness of the supporting base material 12 is preferably 1.0 mm or less.

<聚醯亞胺樹脂層> 聚醯亞胺樹脂層14包含聚醯亞胺樹脂,且使用例如聚醯亞胺薄膜。作為聚醯亞胺薄膜之市售品之具體例,可例舉東洋紡股份有限公司製之「XENOMAX」,宇部興產股份有限公司製之「UPILEX 25S」。 為了形成構成電子裝置之高精細配線等,較佳為聚醯亞胺樹脂層14之表面14a平滑。具體而言,聚醯亞胺樹脂層14之表面14a之表面粗糙度Ra較佳為50 nm以下,更佳為30 nm以下,進而更佳為10 nm以下。作為表面粗糙度Ra之下限,可例舉0.01 nm以上。 基於製造步驟之操作性之點,聚醯亞胺樹脂層14之厚度較佳為1 μm以上,更佳為5 μm以上,進而更佳為10 μm以上。基於柔軟性之點,聚醯亞胺樹脂層14之厚度較佳為1 mm以下,更佳為0.2 mm以下。 由於聚醯亞胺樹脂層14之熱膨脹係數與支持基材12之熱膨脹係數之差較小者可抑制加熱後或冷卻後之撓曲,因而較佳。具體而言,聚醯亞胺樹脂層14與支持基材12之熱膨脹係數之差較佳為0~90×10-6 /°C,更佳為0~30×10-6 /°C。<Polyimide Resin Layer> The polyimide resin layer 14 contains polyimide resin, and a polyimide film, for example, is used. Specific examples of commercially available polyimide films include "XENOMAX" manufactured by Toyobo Co., Ltd. and "UPILEX 25S" manufactured by Ube Kosan Co., Ltd. In order to form high-definition wiring and the like constituting an electronic device, it is preferable that the surface 14a of the polyimide resin layer 14 is smooth. Specifically, the surface roughness Ra of the surface 14a of the polyimide resin layer 14 is preferably 50 nm or less, more preferably 30 nm or less, and still more preferably 10 nm or less. An example of the lower limit of surface roughness Ra is 0.01 nm or more. Based on the operability of the manufacturing steps, the thickness of the polyimide resin layer 14 is preferably 1 μm or more, more preferably 5 μm or more, and even more preferably 10 μm or more. Based on flexibility, the thickness of the polyimide resin layer 14 is preferably less than 1 mm, more preferably less than 0.2 mm. The smaller the difference between the thermal expansion coefficient of the polyimide resin layer 14 and the thermal expansion coefficient of the supporting base material 12, the smaller the thermal expansion coefficient of the polyimide resin layer 14 and the supporting base material 12 can suppress the deflection after heating or cooling, so it is preferable. Specifically, the difference in thermal expansion coefficient between the polyimide resin layer 14 and the supporting base material 12 is preferably 0 to 90×10 -6 /°C, more preferably 0 to 30×10 -6 /°C.

聚醯亞胺樹脂層14之面積(表面14a之面積)未特別限制,但較佳小於支持基材12之面積。另一方面,基於電子裝置之生產性之點,聚醯亞胺樹脂層14之面積較佳為300 cm2 以上。 聚醯亞胺樹脂層14之形狀未特別限制,可為矩形狀亦可為圓形狀。又可於聚醯亞胺樹脂層14,形成定向平面(形成於基板外周之平坦部分)及凹口(形成於基板之外周緣之至少1個V型缺口)。The area of the polyimide resin layer 14 (the area of the surface 14a) is not particularly limited, but is preferably smaller than the area of the supporting base material 12. On the other hand, based on the productivity of the electronic device, the area of the polyimide resin layer 14 is preferably 300 cm 2 or more. The shape of the polyimide resin layer 14 is not particularly limited, and may be a rectangular shape or a circular shape. In addition, an orientation plane (a flat part formed on the outer periphery of the substrate) and a notch (at least one V-shaped notch formed on the outer periphery of the substrate) can be formed on the polyimide resin layer 14 .

<矽酮樹脂層> 矽酮樹脂層13為主要包含矽酮樹脂者。矽酮樹脂之構造未特別限制。矽酮樹脂通常將可藉由硬化處理成為矽酮樹脂之硬化性矽酮硬化(交聯硬化)而獲得。 作為硬化性矽酮之具體例,根據其之硬化機製,可例舉縮合反應型矽酮、附加反應型矽酮、紫外線硬化型矽酮及電子束硬化型矽酮。硬化性矽酮之重量平均分子量較佳為5,000~60,000,更佳為5,000~30,000。<Silicone resin layer> The silicone resin layer 13 mainly contains silicone resin. The structure of the silicone resin is not particularly limited. Silicone resin can usually be obtained by curing silicone hardening (cross-linking hardening) into curable silicone resin. Specific examples of curable silicones include condensation reaction type silicone, additional reaction type silicone, ultraviolet curing type silicone, and electron beam curing type silicone, depending on the curing mechanism. The weight average molecular weight of the curable silicone is preferably 5,000 to 60,000, more preferably 5,000 to 30,000.

作為矽酮樹脂層13之製造方法,如上所述,較佳為如下方法:於聚醯亞胺樹脂層14之背面(與表面14a相反側之面)塗佈包含成為上述矽酮樹脂之硬化性矽酮之硬化性組合物,視需要去除溶媒,形成塗膜,使塗膜中之硬化性矽酮硬化,而設為矽酮樹脂層13。 硬化性組合物除了硬化性矽酮外,亦可包含溶媒、鉑催化劑(使用附加反應型矽酮作為硬化性矽酮之情形)、調平劑及金屬化合物等。作為金屬化合物所含之金屬元素之具體例,可例舉3d過渡金屬、4d過渡金屬、鑭系金屬、鉍、鋁及錫。適當調整金屬化合物之含量。As the manufacturing method of the silicone resin layer 13, as mentioned above, the following method is preferable: Coating the back surface of the polyimide resin layer 14 (the surface opposite to the surface 14a) containing the curable silicone resin. From the curable composition of silicone, the solvent is removed if necessary to form a coating film, and the curable silicone in the coating film is hardened to form the silicone resin layer 13 . In addition to curable silicone, the curable composition may also include a solvent, a platinum catalyst (when an additional reactive silicone is used as the curable silicone), a leveling agent, a metal compound, etc. Specific examples of the metal element contained in the metal compound include 3d transition metals, 4d transition metals, lanthanide series metals, bismuth, aluminum and tin. Appropriately adjust the content of metal compounds.

矽酮樹脂層13之厚度較佳為100 μm以下,更佳為50 μm以下,進而更佳為30 μm以下。另一方面,矽酮樹脂層13之厚度較佳為超1 μm,更佳為4 μm以上。上述厚度係以接觸式膜厚測定裝置測定5點以上之任意位置之矽酮樹脂層13之厚度,並將該等進行算數平均所得者。The thickness of the silicone resin layer 13 is preferably 100 μm or less, more preferably 50 μm or less, and even more preferably 30 μm or less. On the other hand, the thickness of the silicone resin layer 13 is preferably more than 1 μm, more preferably more than 4 μm. The above-mentioned thickness is obtained by measuring the thickness of the silicone resin layer 13 at five or more arbitrary positions using a contact-type film thickness measuring device and averaging the results.

<積層基板之用途> 作為積層基板10之用途,可例舉後述之顯示裝置、接收感測器面板、太陽能電池、薄膜2次電池及積體電路等。亦有將積層基板10於大氣氛圍下,以例如450°C以上之高溫條件,暴露20分鐘以上之情形。 作為顯示裝置之具體例,可例舉LCD、OLED、電子紙、電漿顯示面板、場發射面板、量子點LED面板、微LED顯示器面板及MEMS(Micro Electro Mechanical Systems:微電子機械系統)快門面板。 作為接收感測器面板之具體例,可例舉電磁波接收感測器面板、X射線受光感測器面板、紫外線受光感測器面板、可見光線受光感測器面板及紅外線受光感測器面板。用於接收感測器面板之情形時,亦可藉由樹脂等之補強片等補強聚醯亞胺樹脂層。<Use of laminated substrate> Examples of uses of the laminated substrate 10 include display devices, receiving sensor panels, solar cells, thin film secondary batteries, integrated circuits, etc., which will be described later. There are also cases where the laminated substrate 10 is exposed to high temperature conditions such as 450° C. or higher in the atmosphere for more than 20 minutes. Specific examples of display devices include LCD, OLED, electronic paper, plasma display panels, field emission panels, quantum dot LED panels, micro-LED display panels, and MEMS (Micro Electro Mechanical Systems) shutter panels. . Specific examples of the receiving sensor panel include an electromagnetic wave receiving sensor panel, an X-ray receiving sensor panel, an ultraviolet receiving sensor panel, a visible ray receiving sensor panel, and an infrared receiving sensor panel. When used to receive a sensor panel, the polyimide resin layer can also be reinforced by reinforcing sheets of resin or the like.

如上所述,使用本發明之積層基板,製造包含聚醯亞胺樹脂層與電子裝置用構件之電子裝置。 作為電子裝置之製造方法,可例舉如下方法:例如於積層基板中之聚醯亞胺樹脂層上形成電子裝置用構件,將支持基材自獲得之附電子裝置用構件之積層基板剝離,而獲得具有聚醯亞胺樹脂層與電子裝置用構件的電子裝置。 另,上述電子裝置用構件為構成電子裝置之至少一部分之構件。As described above, an electronic device including a polyimide resin layer and an electronic device member is manufactured using the laminated substrate of the present invention. An example of a method for manufacturing an electronic device is a method of forming a member for an electronic device on a polyimide resin layer in a laminated substrate, peeling the supporting base material from the obtained laminated substrate with the member for an electronic device, and An electronic device including a polyimide resin layer and an electronic device member was obtained. In addition, the above-mentioned member for an electronic device is a member constituting at least a part of the electronic device.

於以下,舉使用第2例之積層基板10之情形為例,更詳細地說明本發明,但使用第1例之積層基板10之情形亦同樣。In the following, the present invention will be described in more detail using the laminated substrate 10 of the second example as an example. However, the same applies to the case of using the laminated substrate 10 of the first example.

電子裝置之製造方法較佳為如下方法:於積層基板10之聚醯亞胺樹脂層14上形成電子裝置用構件20,獲得附電子裝置用構件之積層基板22後,將矽酮樹脂層13與聚醯亞胺樹脂層14之界面作為剝離面,由所得之附電子裝置用構件之積層基板22,分離成電子裝置(附構件之基板24)與附矽酮樹脂層之支持基材26。 將形成電子裝置用構件20之步驟稱為「構件形成步驟」,將分離成附構件之基板24與附矽酮樹脂層之支持基材26之步驟稱為「分離步驟」。 於以下,針對各步驟中使用之材料及順序詳細敘述。A preferred method for manufacturing an electronic device is as follows: forming an electronic device member 20 on the polyimide resin layer 14 of the laminated substrate 10, obtaining the laminated substrate 22 with the electronic device member, and then combining the silicone resin layer 13 and The interface of the polyimide resin layer 14 serves as a peeling surface, and the obtained laminated substrate 22 with components for electronic devices is separated into an electronic device (substrate 24 with components) and a supporting base material 26 with a silicone resin layer. The step of forming the electronic device member 20 is called a "member forming step", and the step of separating the substrate 24 with the member and the supporting base material 26 with the silicone resin layer is called a "separation step". In the following, the materials and order used in each step are described in detail.

構件形成步驟為於積層基板10之聚醯亞胺樹脂層14上形成電子裝置用構件之步驟。更具體而言,如圖5所示,於聚醯亞胺樹脂層14之表面14a上形成電子裝置用構件20,獲得附電子裝置用構件之積層基板22。 首先,針對本步驟中使用之電子裝置用構件20詳細敘述,且針對後續步驟之順序詳細敘述。The component forming step is a step of forming components for electronic devices on the polyimide resin layer 14 of the laminated substrate 10 . More specifically, as shown in FIG. 5 , the electronic device member 20 is formed on the surface 14 a of the polyimide resin layer 14 to obtain the electronic device member-attached laminated substrate 22 . First, the electronic device member 20 used in this step will be described in detail, and the sequence of subsequent steps will be described in detail.

電子裝置用構件20為形成於積層基板10中之聚醯亞胺樹脂層14上,且構成電子裝置之至少一部分之構件。更具體而言,作為電子裝置用構件20,可例舉用於顯示裝置、接收感測器面板、太陽能電池、薄膜2次電池及積體電路等之構件(例如,LTPS等顯示裝置用構件、接收感測器面板用構件、太陽能電池用構件、薄膜2次電池用構件及積體電路用電路),可例舉例如美國專利申請公開第2018/0178492號說明書之段落[0192]所記載之太陽能電池用構件、同段落[0193]所記載之薄膜2次電池用構件、同段落[0194]所記載之電子零件用電路。The electronic device member 20 is formed on the polyimide resin layer 14 in the laminated substrate 10 and constitutes at least a part of the electronic device. More specifically, examples of the electronic device member 20 include members used for display devices, receiving sensor panels, solar cells, thin film secondary batteries, integrated circuits, etc. (for example, display device members such as LTPS, Components for receiving sensor panels, components for solar cells, components for thin-film secondary batteries, and circuits for integrated circuits), for example, the solar energy described in paragraph [0192] of the specification of U.S. Patent Application Publication No. 2018/0178492 Components for batteries, components for thin film secondary batteries described in the same paragraph [0193], and circuits for electronic components described in the same paragraph [0194].

上述之附電子裝置用構件之積層基板22之製造方法未特別限制,根據電子裝置用構件之構成構件之種類,以先前眾所周知之方法,於積層基板10之聚醯亞胺樹脂層14之表面14a上形成電子裝置用構件20。 電子裝置用構件20可為所有構件之一部分(以下,稱為「部分構件」),而非最終形成於聚醯亞胺樹脂層14之表面14a之所有構件(以下,稱為「所有構件」)。亦可於後續步驟中將自矽酮樹脂層13剝離之附部分構件之基板設為附所有構件之基板(相當於電子裝置)。 可於自矽樹脂層13剝離之附所有構件之基板,於其之剝離面形成其他電子裝置用構件。再者,亦可使2片附電子裝置用構件之積層基板之電子裝置用構件彼此對向,並將兩者貼合,而組裝附所有構件之積層體,其後,將2片附矽酮樹脂層之支持基材自附所有構件之積層體剝離,而製造電子裝置。The manufacturing method of the above-mentioned laminated substrate 22 with components for electronic devices is not particularly limited. Depending on the type of components for the electronic device, the surface 14a of the polyimide resin layer 14 of the laminated substrate 10 is formed on the surface 14a of the polyimide resin layer 14 of the laminated substrate 10 by a conventionally well-known method. The electronic device member 20 is formed on it. The electronic device member 20 may be a part of all the members (hereinafter referred to as "partial members"), rather than all the members finally formed on the surface 14a of the polyimide resin layer 14 (hereinafter referred to as "all members") . The substrate with some components peeled off from the silicone resin layer 13 can also be used as a substrate with all components (equivalent to an electronic device) in subsequent steps. The substrate with all components peeled off from the silicone resin layer 13 can be used to form other electronic device components on the peeled surface. Furthermore, the electronic device components of the two laminated substrates with the electronic device components can also be made to face each other, and the two are laminated together to assemble the laminated body with all the components, and then the two silicone-attached laminates can be assembled. The support base material of the resin layer is peeled off from the laminate with all the components attached, and an electronic device is manufactured.

例如,若舉製造OLED之情形為例,則為了於積層基板10之聚醯亞胺樹脂層14之與矽酮樹脂層13側相反側之表面(表面14a)上形成有機EL構造體,而進行形成透明電極,進而於形成有透明電極之面上蒸鍍孔注入層、孔輸送層、發光層、電子輸送層等,形成背面電極,使用密封板密封等各種層形成或處理。作為該等層形成或處理之具體例,可例舉成膜處理、蒸鍍處理、密封板之接著處理等。For example, taking the case of manufacturing OLED as an example, in order to form an organic EL structure on the surface (surface 14a) of the polyimide resin layer 14 of the multilayer substrate 10 opposite to the silicone resin layer 13 side, A transparent electrode is formed, and then a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, etc. are evaporated on the surface on which the transparent electrode is formed, a back electrode is formed, and various layers such as sealing with a sealing plate are formed or processed. Specific examples of such layer formation or processing include film formation processing, vapor deposition processing, sealing plate bonding processing, and the like.

分離步驟如圖6所示為如下步驟:將矽樹脂層13與聚醯亞胺樹脂層14之界面作為剝離面,由上述構件形成步驟所得之附電子裝置用構件之積層基板22,分離成積層有電子裝置用構件20之聚醯亞胺樹脂層14(附構件之基板24)、與附矽酮樹脂層之支持基材26,而獲得附包含電子裝置用構件20及聚醯亞胺樹脂層14之構件的基板24(電子裝置)。As shown in FIG. 6 , the separation step is as follows: using the interface between the silicone resin layer 13 and the polyimide resin layer 14 as a peeling surface, the laminated substrate 22 with electronic device components obtained in the above component forming step is separated into laminated layers. There is a polyimide resin layer 14 of the electronic device component 20 (the component-attached substrate 24 ), and a supporting base material 26 with the silicone resin layer, thereby obtaining the electronic device component 20 and the polyimide resin layer. 14 components of the substrate 24 (electronic device).

經剝離之聚醯亞胺樹脂層14上之電子裝置用構件20為形成必要之所有構成構件之一部分之情形時,亦可於分離後,將剩餘之構成構件形成於聚醯亞胺樹脂層14上。When the electronic device member 20 on the peeled polyimide resin layer 14 forms part of all necessary constituent members, the remaining constituent members can also be formed on the polyimide resin layer 14 after separation. superior.

剝離聚醯亞胺樹脂層14與矽酮樹脂層13之方法未特別限制。例如,可將銳利之刃狀物插入至聚醯亞胺樹脂層14與矽酮樹脂層13之界面,賦予剝離契機後,吹送水與壓縮空氣之混合流體而剝離。 較佳為以支持基材12成為上側,電子裝置用構件20側成為下側之方式,將附電子裝置用構件之積層基板22配置於平板上,將電子裝置用構件20側真空吸著於平板上,並於該狀態下,首先使刃狀物侵入至聚醯亞胺樹脂層14與矽樹脂層13之界面。其後,以複數個真空吸附墊吸附支持基材12側,使真空吸附墊依序自插入刃狀物之部位附近上升。如此,可容易地剝離附矽酮樹脂層之支持基材26。The method of peeling off the polyimide resin layer 14 and the silicone resin layer 13 is not particularly limited. For example, a sharp blade can be inserted into the interface between the polyimide resin layer 14 and the silicone resin layer 13 to give an opportunity for peeling, and then a mixed fluid of water and compressed air can be blown to peel off. Preferably, the laminated substrate 22 with the electronic device member 20 is placed on a flat plate so that the supporting base material 12 is on the upper side and the electronic device member 20 side is on the lower side, and the electronic device member 20 side is vacuum-suctioned on the flat plate. On, and in this state, the blade-shaped object is first invaded into the interface between the polyimide resin layer 14 and the silicon resin layer 13 . Thereafter, a plurality of vacuum adsorption pads are used to adsorb the supporting substrate 12 side, and the vacuum adsorption pads are sequentially raised from the vicinity of the position where the blade is inserted. In this way, the supporting base material 26 with the silicone resin layer can be easily peeled off.

將附構件之基材24自附電子裝置用構件之積層基板22分離時,藉由控制離子化器之吹送或濕度,可進一步抑制矽酮樹脂層13之碎片靜電吸附於附構件之基板24。 上述之電子裝置(附構件之基板24)之製造方法較適於例如美國專利申請公開第2018/0178492號說明書之段落[0210]所記載之顯示裝置之製造,作為附構件之基板24,可例舉例如同段落之[0211]所記載者。 [實施例]When the component-attached substrate 24 is separated from the laminated substrate 22 with electronic device components, by controlling the blowing of the ionizer or the humidity, the fragments of the silicone resin layer 13 can be further suppressed from electrostatic adsorption to the component-attached substrate 24 . The above-mentioned manufacturing method of the electronic device (the substrate 24 with the component) is more suitable for the manufacturing of the display device described in paragraph [0210] of the specification of US Patent Application Publication No. 2018/0178492. As the substrate 24 with the component, for example An example is as recorded in paragraph [0211]. [Example]

於以下,藉由實施例等具體說明本發明,但本發明並非受該等例所限制。後述之例1~7、9~15為實施例,例8為比較例。In the following, the present invention will be described in detail using Examples, etc., but the present invention is not limited by these Examples. Examples 1 to 7 and 9 to 15 described below are examples, and Example 8 is a comparative example.

<裝置之耐久性評估> 將由各例之積層基板所得之有機EL顯示裝置保存於60°C、90%RH之環境下,比較黑點產生之保存時間。將未達500小時而黑點擴大者評估為×,將500小時以上且未達1000小時而黑點擴大者評估為○,將1000小時以上而黑點擴大者評估為◎。<Evaluation of device durability> The organic EL display devices obtained from the laminated substrates of each example were stored in an environment of 60°C and 90% RH, and the storage times of black spots were compared. Those with enlarged black spots after less than 500 hours are evaluated as ×, those with more than 500 hours but less than 1000 hours with enlarged black spots are evaluated as ○, those with more than 1000 hours with enlarged black spots are evaluated as ◎.

<例1> (硬化性矽酮之調製) 於1L之燒瓶中,加入三乙氧基甲基矽烷(179 g)、甲苯(300 g)、乙酸(5 g),將混合物以25°C攪拌20分鐘後,進而加熱至60°C,使之反應12小時。將所得之反應粗液冷卻至25°C後,用水(300 g),將反應粗液清洗3次。於清洗後之反應粗液中加入氯化三甲基矽烷(70 g),將混合液以25°C攪拌20分鐘後,進而加熱至50°C,使之反應12小時。將所得之反應粗液冷卻至25°C後,用水(300 g),將反應粗液清洗3次。自清洗後之反應粗液減壓餾去甲苯,設為漿體狀態後,以真空乾燥機乾燥一晚上,藉此獲得白色之有機聚矽氧烷化合物即硬化性矽酮1。硬化性矽酮1之T單位之個數:M單位之個數=87:13(莫耳比)。另,M單位意指以(R)3 SiO1/2 表示之1官能有機矽烷氧基單位。T單位意指以RSiO3/2 (R表示氫原子或有機基)表示之3官能有機矽烷氧基單位。<Example 1> (Preparation of hardening silicone) In a 1L flask, add triethoxymethylsilane (179 g), toluene (300 g), and acetic acid (5 g), and stir the mixture at 25°C. After 20 minutes, the mixture was further heated to 60°C and allowed to react for 12 hours. After the obtained crude reaction liquid was cooled to 25°C, the crude reaction liquid was washed three times with water (300 g). Trimethylsilane chloride (70 g) was added to the crude reaction solution after cleaning, and the mixture was stirred at 25°C for 20 minutes, then heated to 50°C and allowed to react for 12 hours. After the obtained crude reaction liquid was cooled to 25°C, the crude reaction liquid was washed three times with water (300 g). Toluene was distilled off under reduced pressure from the crude reaction liquid after cleaning, and after being brought to a slurry state, it was dried overnight in a vacuum dryer to obtain a white organopolysiloxane compound, curable silicone 1. The number of T units of hardening silicone 1: the number of M units = 87:13 (mol ratio). In addition, the M unit means a monofunctional organosiloxy unit represented by (R) 3 SiO 1/2 . The T unit means a trifunctional organosiloxy unit represented by RSiO 3/2 (R represents a hydrogen atom or an organic group).

(硬化性組合物之調製) 將硬化性矽1與己烷混合,進而添加有機鋯系化合物(辛酸鋯化合物)及有機鉍系化合物(2-乙基己酸鉍)。溶媒量以固體成分濃度為50質量%之方式調整。又,金屬化合物之添加量以金屬元素相對於樹脂100質量部為0.01質量部之方式調整。藉由使用孔徑0.45 μm之過濾器過濾所得之混合液,而獲得硬化性組合物。(Preparation of hardening composition) Curable silicon 1 and hexane were mixed, and an organic zirconium-based compound (zirconium octoate compound) and an organic bismuth-based compound (bismuth 2-ethylhexanoate) were added. The solvent amount was adjusted so that the solid content concentration would be 50% by mass. In addition, the amount of the metal compound added was adjusted so that the metal element was 0.01 parts by mass relative to 100 parts by mass of the resin. The obtained mixture was filtered using a filter with a pore size of 0.45 μm to obtain a curable composition.

(積層體之製作) 將兩面配置有保護膜之厚度為0.015 mm之聚醯亞胺薄膜(東洋紡股份有限公司製,商品名「XENOMAX」)之一保護膜剝離,於保護膜被剝離側之聚醯亞胺薄膜之表面上,塗佈經調製之硬化性組合物,使用加熱板以140°C加熱10分鐘,藉此形成矽酮樹脂層。矽酮樹脂層之厚度為10 μm。 接著,將以水系玻璃清洗劑(Parkercorp股份有限公司製,「PK-LCG213」)清洗後,以純水清洗之200×200 mm,厚度為0.5 mm之玻璃板「AN100」(支持基材)、與形成有矽酮樹脂層之聚醯亞胺薄膜以捲對捲方式貼合,而製作依序配置有玻璃板、矽酮樹脂層、聚醯亞胺薄膜及保護膜之積層體。(Production of laminated body) Peel off one of the protective films of a polyimide film with a thickness of 0.015 mm (manufactured by Toyobo Co., Ltd., trade name "XENOMAX") with protective films on both sides, and place it on the surface of the polyimide film on the side where the protective film is peeled off On the top, apply the prepared curable composition and heat it at 140°C for 10 minutes using a hot plate to form a silicone resin layer. The thickness of the silicone resin layer is 10 μm. Next, clean the 200×200 mm, 0.5 mm thick glass plate "AN100" (support base material) with a water-based glass cleaner (Parkercorp Co., Ltd., "PK-LCG213"), and then clean it with pure water. The polyimide film formed with the silicone resin layer is laminated in a roll-to-roll manner to produce a laminate in which the glass plate, the silicone resin layer, the polyimide film and the protective film are arranged in this order.

(加熱處理及清洗處理) 將上述積層體搬送至加熱裝置,且在靜置於加熱裝置內之前,將保護膜剝離,於加熱裝置內靜置,並以450°C加熱0.5小時。加熱處理後,將積層基板自加熱裝置取出,對聚醯亞胺樹脂層表面實施電暈處理,其後,實施使用輥刷之清洗處理,獲得積層基板1。清洗處理時,為了不使積層基板於清洗機內移動,以固定機構(夾輥)固定積層基板。此時,固定機構與聚醯亞胺樹脂層表面接觸。 另,剝離保護膜時,為了防止產生之靜電,而使用離子化器減少聚醯亞胺樹脂層表面帶電。以下,將使用離子化器之對策稱為「對策A」。 又,加熱處理時,以聚醯亞胺樹脂層於加熱裝置內朝下之方式配置積層基板。以下,將以聚醯亞胺樹脂層朝下之方式配置積層基板之對策稱為「對策B」。 又,將實施上述電暈處理及清洗處理之對策稱為「對策C」。 作為加熱裝置,使用紅外線加熱裝置。以下,將使用紅外線加熱裝置之對策稱為「對策D」。(Heating treatment and cleaning treatment) The above-mentioned laminated body was transported to a heating device, and before leaving it still in the heating device, the protective film was peeled off, left in the heating device, and heated at 450° C. for 0.5 hours. After the heat treatment, the laminated substrate is taken out from the heating device, corona treatment is performed on the surface of the polyimide resin layer, and then cleaning treatment using a roller brush is performed to obtain the laminated substrate 1 . During the cleaning process, in order to prevent the laminated substrate from moving in the cleaning machine, a fixing mechanism (pinch roller) is used to fix the laminated substrate. At this time, the fixing mechanism is in contact with the surface of the polyimide resin layer. In addition, in order to prevent static electricity from being generated when peeling off the protective film, an ionizer is used to reduce the surface charge of the polyimide resin layer. Hereinafter, the countermeasure using an ionizer is referred to as "Measure A". Moreover, during the heat treatment, the laminated substrate is arranged so that the polyimide resin layer faces downward in the heating device. Hereinafter, the countermeasure of arranging the laminated substrate with the polyimide resin layer facing downward is referred to as "Measure B". In addition, the countermeasure of performing the above-mentioned corona treatment and cleaning treatment is called "Measure C". As the heating device, an infrared heating device is used. Hereinafter, the countermeasure using an infrared heating device is referred to as "Measure D".

<例2~15> 如表1及2所示,除了變更(加熱處理及清洗處理)時實施對策A~F之哪一者以外,皆根據與例1同樣之程序,獲得積層基板。 另,對策E意指於清洗機內固定積層基板時,使用不與聚醯亞胺樹脂層表面接觸之固定機構之對策。 又,對策F意指清洗處理時,使用盤刷之對策。<Examples 2~15> As shown in Tables 1 and 2, a laminated substrate was obtained according to the same procedure as Example 1, except for changing which of the measures A to F was implemented (heat treatment and cleaning treatment). In addition, Countermeasure E means to use a fixing mechanism that does not come into contact with the surface of the polyimide resin layer when fixing the laminated substrate in the cleaning machine. Also, Countermeasure F refers to the countermeasure of using a disk brush during cleaning.

表1及2中,將實施各對策之情形設為「有」,將不實施各對策之情形設為「無」。 例如,對策C為「無」之例2中,加熱處理後,不實施電暈處理及清洗處理。 又,對策B為「無」之例3中,於加熱裝置內配置積層基板時,以聚醯亞胺樹脂層朝上之方式配置積層基板。 又,對策A為「無」之例4中,不使用離子化器,而進行保護膜之剝離。 又,對策D為「無」之例10中,使用熱風加熱裝置作為加熱裝置。 又,對策E為「無」之例11中,使用與聚醯亞胺樹脂層表面接觸之固定機構。 又,對策F為「無」之例12中,實施使用輥刷之清洗處理。In Tables 1 and 2, the situation where each countermeasure is implemented is regarded as "yes", and the situation where each countermeasure is not implemented is regarded as "no". For example, in Example 2 where Countermeasure C is "None", corona treatment and cleaning treatment are not performed after the heat treatment. Moreover, in Example 3 in which the countermeasure B is "none", when the laminated substrate is placed in the heating device, the laminated substrate is placed with the polyimide resin layer facing upward. Furthermore, in Example 4 in which Countermeasure A is "None", the protective film was peeled off without using an ionizer. Furthermore, in Example 10 in which the countermeasure D is "none", a hot air heating device is used as the heating device. Furthermore, in Example 11 in which the countermeasure E is "none", a fixing mechanism in contact with the surface of the polyimide resin layer is used. Moreover, in Example 12 in which the countermeasure F is "None", a cleaning process using a roller brush was performed.

表1及2中,「第1凸部之數量」、「第2凸部之數量」、「第3凸部之數量」分別表示上述之聚醯亞胺樹脂層表面之第1凸部、第2凸部及第3凸部之數量(個/cm2 )。 「凸部之數量」表示聚醯亞胺樹脂層表面之凸部之數量(合計數)(個/cm2 )。 「凹部之數量」表示聚醯亞胺樹脂層表面之凹部之數量(合計數)(個/cm2 )。 凸部及凹部之測定方法如上所述。In Tables 1 and 2, "the number of first protrusions", "the number of second protrusions", and "the number of third protrusions" respectively represent the first and third protrusions on the surface of the polyimide resin layer. The number of 2 convex parts and the 3 rd convex parts (pieces/cm 2 ). "The number of convex parts" means the number (total number) of convex parts on the surface of the polyimide resin layer (pieces/cm 2 ). "The number of recessed parts" represents the number (total number) of recessed parts on the surface of the polyimide resin layer (pieces/cm 2 ). The method of measuring the convex portion and the concave portion is as described above.

<有機EL顯示裝置(相當於電子裝置)之製造> 使用例1~15所得之積層基板,根據以下之程序,製造有機EL顯示裝置。 首先,於積層基板之聚醯亞胺樹脂層之與玻璃板側相反側之表面上,藉由電漿CVD(Chemical Vapor Deposition:化學氣相沈積)法依序成膜氮化矽、氧化矽、非晶矽。接著,藉由離子摻雜裝置,將低濃度之硼注入至非晶矽層,進行加熱處理,並進行脫氫處理。接著,藉由雷射退火裝置,進行非晶矽層之結晶化處理。接著,藉由使用光微影法之蝕刻及離子摻雜裝置,將低濃度之磷注入至非晶矽層,形成N型及P型TFT(Thin Film Transistor:薄膜電晶體)區域。 接著,於聚醯亞胺樹脂層之與玻璃板側相反側,藉由電漿CVD法成膜氧化矽膜,形成閘極絕緣膜後,藉由濺鍍法成膜鉬膜,藉由使用光微影法之蝕刻形成閘極電極。接著,藉由光微影法與離子摻雜裝置,將高濃度磷與硼注入於N型、P型之各個期望之區域,形成源極區域及汲極區域。 接著,於聚醯亞胺樹脂層之與玻璃板側相反側,以電漿CVD法成膜氧化矽形成層間絕緣膜,藉由濺鍍法成膜鋁膜及藉由使用光微影法之蝕刻形成TFT電極。接著,於氫氛圍下,進行加熱處理,並進行氫化處理後,以電漿CVD法成膜氮矽膜膜,而形成鈍化層。 接著,於聚醯亞胺樹脂層之與玻璃板側相反側,塗佈紫外線硬化性樹脂,藉由光微影法形成平坦化層與接觸孔。接著,藉由濺鍍法成膜氧化銦錫膜,藉由使用光微影法之蝕刻形成像素電極。接著,藉由蒸鍍法,於聚醯亞胺樹脂層之與玻璃板側相反側,依序成膜作為電洞注入層之4,4',4''-三(3-甲基苯基苯基胺基)三苯胺、作為電洞輸送層之雙[(N-萘基)-N-苯基]-聯苯胺、作為發光層之於8-羥基喹啉鋁錯合物(Alq3)中,混合40體積%之2,6-雙[4-[N-(4-甲氧苯基)-N-苯基]胺基苯乙烯]萘-1,5-二甲腈(BSN-BCN)者、作為電子輸送層之Alq3。接著,藉由濺鍍法成膜鋁膜,藉由使用光微影法之蝕刻形成對向電極。 接著,於聚醯亞胺樹脂層之與玻璃板側相反側,經由紫外線硬化型之接著層,貼合另一塊玻璃板並密封。藉由上述程序,於聚醯亞胺樹脂層上形成有機EL構造體。於聚醯亞胺樹脂層上具有有機EL構造體之構造物(以下,稱為面板A。)為本發明之附電子裝置用構件之積層基板。 接著,使面板A之密封體側真空吸附於平板後,將厚度為0.1 mm之不鏽鋼製刃具插入至面板A角落部之聚醯亞胺樹脂層與矽酮樹脂層之界面,對聚醯亞胺樹脂層與矽樹脂層之界面賦予剝離契機。且,以真空吸附墊吸附面板A之支持基材表面後,使吸著附上升。此處,一面自離子化器(Keyence公司製)將除電性流體吹送至該界面一面進行刀具之插入。接著,自離子化器向形成之空隙繼續吹送除電性流體,且,與之同時,一面將水注入至剝離前線,一面上提真空吸附墊。其結果,僅形成有有機EL構造體之聚醯亞胺樹脂層保留於平板上,而可剝離附矽酮樹脂層之支持基材。 接著,使用雷射切割器或劃線-裂斷法,將經分離之聚醯亞胺樹脂層切斷,分斷成複數個單元後,組裝形成有有機EL構造體之聚醯亞胺樹脂層與對向基板,實施模組形成步驟,製作有機EL顯示裝置。<Manufacturing of organic EL display devices (equivalent to electronic devices)> Using the laminated substrates obtained in Examples 1 to 15, an organic EL display device was produced according to the following procedure. First, on the surface of the polyimide resin layer of the laminated substrate on the opposite side to the glass plate, films of silicon nitride, silicon oxide, and Amorphous silicon. Next, a low-concentration boron is implanted into the amorphous silicon layer through an ion doping device, followed by heat treatment and dehydrogenation treatment. Then, the amorphous silicon layer is crystallized using a laser annealing device. Next, by using photolithographic etching and ion doping equipment, low-concentration phosphorus is implanted into the amorphous silicon layer to form N-type and P-type TFT (Thin Film Transistor: thin film transistor) regions. Next, a silicon oxide film is formed on the side of the polyimide resin layer opposite to the glass plate by plasma CVD. After forming a gate insulating film, a molybdenum film is formed by sputtering. By using light The gate electrode is formed by photolithographic etching. Next, high-concentration phosphorus and boron are implanted into each desired region of the N-type and P-type through photolithography and ion doping equipment to form a source region and a drain region. Next, on the side of the polyimide resin layer opposite to the glass plate side, silicon oxide is deposited by the plasma CVD method to form an interlayer insulating film, an aluminum film is deposited by the sputtering method and etched by the photolithography method. Form TFT electrodes. Then, heat treatment is performed in a hydrogen atmosphere, and after hydrogenation treatment, a silicon nitride film is formed by a plasma CVD method to form a passivation layer. Next, ultraviolet curable resin is coated on the side of the polyimide resin layer opposite to the glass plate side, and a planarization layer and contact holes are formed by photolithography. Next, an indium tin oxide film is formed by sputtering, and the pixel electrode is formed by etching using photolithography. Then, by evaporation method, 4,4',4''-tris(3-methylphenyl) as a hole injection layer is sequentially formed on the side of the polyimide resin layer opposite to the glass plate side. Phenylamine)triphenylamine, bis[(N-naphthyl)-N-phenyl]-benzidine as the hole transport layer, and 8-hydroxyquinoline aluminum complex (Alq3) as the light-emitting layer , mix 40 volume % of 2,6-bis[4-[N-(4-methoxyphenyl)-N-phenyl]aminostyrene]naphthalene-1,5-dicarboxonitrile (BSN-BCN) Or, Alq3 as the electron transport layer. Next, an aluminum film is formed by sputtering, and a counter electrode is formed by etching using photolithography. Then, another glass plate is bonded to the side of the polyimide resin layer opposite to the glass plate through an ultraviolet curable adhesive layer and sealed. Through the above procedure, an organic EL structure is formed on the polyimide resin layer. A structure having an organic EL structure on a polyimide resin layer (hereinafter referred to as panel A) is a laminated substrate with components for electronic devices of the present invention. Next, after the sealing body side of panel A is vacuum-adsorbed to the flat plate, a stainless steel cutting tool with a thickness of 0.1 mm is inserted into the interface between the polyimide resin layer and the silicone resin layer at the corner of panel A, and the polyimide is The interface between the resin layer and the silicone resin layer provides an opportunity for peeling. And, after adsorbing the surface of the support base material of panel A with a vacuum adsorption pad, the adsorption pad is allowed to rise. Here, the cutter is inserted while blowing the antistatic fluid from the ionizer (made by Keyence Corporation) to the interface. Next, the antistatic fluid is continued to be blown from the ionizer to the formed gap, and at the same time, the vacuum adsorption pad is lifted up while injecting water to the peeling front line. As a result, only the polyimide resin layer on which the organic EL structure is formed remains on the flat plate, and the supporting base material with the silicone resin layer can be peeled off. Next, the separated polyimide resin layer is cut using a laser cutter or a scribing-fragmentation method, and divided into a plurality of units, and then assembled to form a polyimide resin layer with an organic EL structure. and a counter substrate, and perform the module forming step to produce an organic EL display device.

[表1] 表1 例1 例2 例3 例4 例5 例6 例7 例8 凸部 對策A 對策B 對策C 第1凸部之數量 0.01 0.01 0.06 0.08 0.13 0.06 0.08 0.13 第2凸部之數量 0.05 0.20 0.10 0.05 0.10 0.25 0.20 0.25 第3凸部之數量 0.08 0.23 0.13 0.15 0.20 0.28 0.30 0.35 凸部之數量 0.14 0.44 0.29 0.28 0.43 0.59 0.58 0.73 凹部 對策D 對策E 對策F 凹部之數量(總數) 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.19 裝置耐久性 × [Table 1] Table 1 example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 convex part Countermeasure A have have have without without have without without Countermeasure B have have without have without without have without Countermeasure C have without have have have without without without Number of 1st convex parts 0.01 0.01 0.06 0.08 0.13 0.06 0.08 0.13 Number of 2nd convex parts 0.05 0.20 0.10 0.05 0.10 0.25 0.20 0.25 Number of 3rd convex parts 0.08 0.23 0.13 0.15 0.20 0.28 0.30 0.35 The number of convex parts 0.14 0.44 0.29 0.28 0.43 0.59 0.58 0.73 concavity Countermeasure D have have have have have have have without Countermeasure E without without without without without without without without Countermeasure F without without without without without without without without Number of recesses (total number) 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.19 Device durability ×

[表2] 表2 例9 例10 例11 例12 例13 例14 例15 凸部 對策A 對策B 對策C 第1凸部之數量 0.06 0.06 0.06 0.06 0.06 0.06 0.06 第2凸部之數量 0.25 0.25 0.25 0.25 0.25 0.25 0.25 第3凸部之數量 0.28 0.28 0.28 0.28 0.28 0.28 0.28 凸部之數量 0.59 0.59 0.59 0.59 0.59 0.59 0.59 凹部 對策D 對策E 對策F 凹部之數量(總數) 0.04 0.08 0.10 0.09 0.14 0.15 0.13 裝置耐久性 [Table 2] Table 2 Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Example 15 convex part Countermeasure A have have have have have have have Countermeasure B without without without without without without without Countermeasure C without without without without without without without Number of 1st convex parts 0.06 0.06 0.06 0.06 0.06 0.06 0.06 Number of 2nd convex parts 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Number of 3rd convex parts 0.28 0.28 0.28 0.28 0.28 0.28 0.28 The number of convex parts 0.59 0.59 0.59 0.59 0.59 0.59 0.59 concavity Countermeasure D have without have have without have without Countermeasure E have have without have without without have Countermeasure F have have have without have without without Number of recesses (total number) 0.04 0.08 0.10 0.09 0.14 0.15 0.13 Device durability

如表1及2所示,使用特定之積層基板之情形時,確認獲得期望之效果。As shown in Tables 1 and 2, when using specific build-up substrates, it is confirmed that the desired effects are obtained.

本申請案係基於2019年6月6日申請之日本專利申請案第2019-106248號者,其內容以引用之方式併入於本文中。This application is based on Japanese Patent Application No. 2019-106248 filed on June 6, 2019, the content of which is incorporated herein by reference.

10:積層基板 12:支持基材 12a:表面 13:矽酮樹脂層 13a:表面 14:聚醯亞胺樹脂層 14a:表面 16:凸部 18:凹部 20:電子裝置用構件 22:附電子裝置用構件之積層基板 24:附構件之基板 26:附矽酮樹脂層之支持基材 L:長度 S:長度10:Laminated substrate 12: Support base material 12a: Surface 13: Silicone resin layer 13a: Surface 14:Polyimide resin layer 14a: Surface 16:convex part 18: concave part 20: Components for electronic devices 22:Laminated substrate with components for electronic devices 24: Base plate with attached components 26: Support base material with silicone resin layer L: length S: length

圖1係模式性顯示本發明之實施形態之積層基板之第1例之剖視圖。 圖2係本發明之實施形態之積層基板之第1例中之聚醯亞胺樹脂層表面之放大剖視圖。 圖3係用以說明凸部之長邊長度及短邊長度之圖。 圖4係模式性顯示本發明之實施形態之積層基板之第2例之剖視圖。 圖5係模式性顯示構件形成步驟之剖視圖。 圖6係模式性顯示分離步驟之剖視圖。FIG. 1 is a cross-sectional view schematically showing a first example of a laminated substrate according to the embodiment of the present invention. 2 is an enlarged cross-sectional view of the surface of the polyimide resin layer in the first example of the laminated substrate according to the embodiment of the present invention. Figure 3 is a diagram for explaining the length of the long side and the length of the short side of the convex portion. FIG. 4 is a cross-sectional view schematically showing a second example of the laminated substrate according to the embodiment of the present invention. Fig. 5 is a cross-sectional view schematically showing the steps of forming the member. Fig. 6 is a cross-sectional view schematically showing the separation step.

Claims (7)

一種積層基板,其具備玻璃製之支持基材、配置於上述支持基材上之矽酮樹脂層、與配置於上述矽酮樹脂層上之聚醯亞胺樹脂層,且上述矽酮樹脂層之厚度為超1μm且100μm以下,於上述聚醯亞胺樹脂層之與上述支持基材相反側之表面上,長邊長度為3μm以上且未達50μm,短邊長度未達50μm,且高度為5μm以下之凸部之數量為0.60個/cm2以下,長邊長度為3~1000μm,短邊長度為20μm,且深度為1μm以下之凹部之數量為0.15個/cm2以下。 A laminated substrate comprising a glass supporting base material, a silicone resin layer disposed on the supporting base material, and a polyimide resin layer disposing on the silicone resin layer, wherein the silicone resin layer The thickness is more than 1 μm and less than 100 μm. On the surface of the polyimide resin layer opposite to the support base material, the length of the long side is more than 3 μm and less than 50 μm, the length of the short side is less than 50 μm, and the height is 5 μm. The number of the following convex parts is 0.60/ cm2 or less, the long side length is 3~1000μm, the short side length is 20μm, and the number of concave parts with a depth of 1μm or less is 0.15/ cm2 or less. 如請求項1之積層基板,其中上述凸部中,長邊長度為10μm以上且未達50μm,短邊長度未達50μm,高度為1μm以下,且包含Na及Cl之至少1種元素之第1凸部之數量為0.15個/cm2以下。 The laminated substrate of Claim 1, wherein the protrusion has a long side length of 10 μm or more and less than 50 μm, a short side length of less than 50 μm, a height of 1 μm or less, and contains at least one element of Na and Cl. The number of convex parts is 0.15/ cm2 or less. 如請求項1或2之積層基板,其中上述凸部中,長邊長度為3μm以上且未達20μm,短邊長度未達20μm,高度為5μm以下,且包含Si及Al之至少1種元素之第2凸部之數量為0.25個/cm2以下。 The laminated substrate of claim 1 or 2, wherein the protrusions have a long side length of 3 μm or more and less than 20 μm, a short side length of less than 20 μm, a height of 5 μm or less, and contain at least one element of Si and Al. The number of second convex parts is 0.25/cm 2 or less. 如請求項3之積層基板,其中上述凸部中,上述第1凸部及上述第2凸部以外之凸部,即長邊長度為3μm以上且未達50μm,短邊長度未達50μm,高度為1μm以下之第3凸部之數量為0.30個/cm2以下。 The laminated substrate according to Claim 3, wherein among the above-mentioned protrusions, the protrusions other than the above-mentioned first protrusion and the above-mentioned second protrusion have a long side length of 3 μm or more and less than 50 μm, a short side length less than 50 μm, and a height The number of third convex portions of 1 μm or less is 0.30/cm 2 or less. 如請求項1或2之積層基板,其中上述凸部之數量為0.20個/cm2以下。 The laminated substrate according to claim 1 or 2, wherein the number of the above-mentioned convex portions is 0.20 pieces/cm 2 or less. 如請求項1或2之積層基板,其中上述凹部之數量為0.07個/cm2以下。 The laminated substrate according to claim 1 or 2, wherein the number of the recesses is 0.07/cm 2 or less. 一種電子裝置之製造方法,其係使用如請求項1至6中任一項之積層基板製造電子裝置,且具備如下步驟:於上述聚醯亞胺樹脂層上以捲對捲(roll to roll)方式形成上述矽酮樹脂層,而獲得附矽酮樹脂層之基板之步驟;於上述附矽酮樹脂層之基板之矽酮樹脂層之表面積層上述支持基材,而製造上述積層基板之步驟;於上述聚醯亞胺樹脂層之與上述支持基材相反側之表面上,形成電子裝置用構件,而獲得附電子裝置用構件之積層基板的構件形成步驟;及自上述附電子裝置用構件之積層基板,獲得具有上述聚醯亞胺樹脂層及上述電子裝置用構件之電子裝置的分離步驟。 A method of manufacturing an electronic device, which uses the laminated substrate according to any one of claims 1 to 6 to manufacture the electronic device, and includes the following steps: rolling to roll on the above-mentioned polyimide resin layer The step of forming the above-mentioned silicone resin layer in a manner to obtain a substrate with a silicone resin layer; the step of laminating the above-mentioned supporting base material on the surface of the silicone resin layer of the above-mentioned substrate with a silicone resin layer to produce the above-mentioned laminated substrate; A member forming step of forming an electronic device member on the surface of the polyimide resin layer opposite to the supporting base material to obtain a laminated substrate with an electronic device member; and A separation step of laminating a substrate to obtain an electronic device having the polyimide resin layer and the electronic device member.
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