TWI839306B - Laminated substrate, method for manufacturing laminated body, laminated body, laminated body with component for electronic device, method for manufacturing electronic device - Google Patents

Laminated substrate, method for manufacturing laminated body, laminated body, laminated body with component for electronic device, method for manufacturing electronic device Download PDF

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TWI839306B
TWI839306B TW112136439A TW112136439A TWI839306B TW I839306 B TWI839306 B TW I839306B TW 112136439 A TW112136439 A TW 112136439A TW 112136439 A TW112136439 A TW 112136439A TW I839306 B TWI839306 B TW I839306B
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adsorption layer
substrate
main surface
electronic device
laminate
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TW112136439A
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TW202402519A (en
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川崎周馬
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日商Agc股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3405Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of organic materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/36Layered products comprising a layer of synthetic resin comprising polyesters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/42Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/10Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/26Polymeric coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/06Angles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/08Dimensions, e.g. volume
    • B32B2309/10Dimensions, e.g. volume linear, e.g. length, distance, width
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/08Dimensions, e.g. volume
    • B32B2309/10Dimensions, e.g. volume linear, e.g. length, distance, width
    • B32B2309/105Thickness
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)

Abstract

本發明係關於一種積層基板,其具有玻璃製之支持基材、及配置於支持基材上之吸附層,於支持基材之吸附層側之表面具有未配置吸附層之周緣區域,吸附層具有支持基材側之第1主面、與第1主面為相反側之第2主面、及連接第1主面與第2主面之端面,端面為自第2主面起,越往第1主面越突出之傾斜面,且傾斜面與第1主面所成之角度未達10°。關於本發明之積層基板,當於其表面上塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,所形成之聚醯亞胺膜不易發生剝離。The present invention relates to a laminated substrate, which has a glass support substrate and an adsorption layer disposed on the support substrate, wherein the surface of the support substrate on the adsorption layer side has a peripheral area where the adsorption layer is not disposed, the adsorption layer has a first main surface on the support substrate side, a second main surface opposite to the first main surface, and an end surface connecting the first main surface and the second main surface, the end surface is an inclined surface that protrudes from the second main surface toward the first main surface, and the angle between the inclined surface and the first main surface is less than 10°. Regarding the laminated substrate of the present invention, when a polyimide varnish is coated on the surface to form a polyimide film, the formed polyimide film is not easy to peel off.

Description

積層基板、積層體之製造方法、積層體、附電子裝置用構件之積層體、電子裝置之製造方法Laminated substrate, method for manufacturing laminated body, laminated body, laminated body with component for electronic device, method for manufacturing electronic device

本發明係關於一種積層基板、積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。The present invention relates to a laminate substrate, a method for manufacturing a laminate, a laminate, a laminate with a component for an electronic device, and a method for manufacturing an electronic device.

太陽電池(PV)、液晶面板(LCD)、有機EL(Electroluminescence,電致發光)面板(OLED)、及感知電磁波、X射線、紫外線、可見光線、紅外線等之接收感測器面板等電子裝置正變得更薄、更輕。伴隨於此,電子裝置所使用之聚醯亞胺樹脂基板等基板亦變得更薄。若因變薄而使基板之強度不足,則存在如下情形,即,基板之操作性降低,於在基板上形成電子裝置用構件之步驟(構件形成步驟)等中會產生問題。Electronic devices such as solar cells (PV), liquid crystal panels (LCD), organic EL (Electroluminescence) panels (OLED), and receiving sensor panels that sense electromagnetic waves, X-rays, ultraviolet rays, visible rays, infrared rays, etc. are becoming thinner and lighter. Along with this, substrates such as polyimide resin substrates used in electronic devices are also becoming thinner. If the strength of the substrate is insufficient due to thinning, there is a situation in which the operability of the substrate is reduced, and problems will occur in the step of forming components for electronic devices on the substrate (component formation step).

因此,最近,為了使基板之操作性變得良好,提出一種使用積層體之技術,上述積層體係於支持基材上配置有聚醯亞胺樹脂基板(專利文獻1)。更具體而言,於專利文獻1中揭示有,可於熱硬化性樹脂組合物硬化體層上塗佈聚醯亞胺清漆,形成樹脂清漆硬化膜(相當於聚醯亞胺膜),並於樹脂清漆硬化膜上配置精密元件。 [先前技術文獻] [專利文獻] Therefore, recently, in order to improve the operability of the substrate, a technology using a laminate has been proposed, wherein the laminate has a polyimide resin substrate disposed on a supporting substrate (Patent Document 1). More specifically, Patent Document 1 discloses that a polyimide varnish can be coated on a cured layer of a thermosetting resin composition to form a resin varnish cured film (equivalent to a polyimide film), and precision components can be disposed on the resin varnish cured film. [Prior Technical Document] [Patent Document]

[專利文獻1]日本專利特開2018-193544號公報[Patent Document 1] Japanese Patent Publication No. 2018-193544

[發明所欲解決之問題][The problem the invention is trying to solve]

另一方面,本發明人實施專利文獻1所記載之塗佈聚醯亞胺清漆製作聚醯亞胺膜之製程,結果發現,當塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,聚醯亞胺膜容易發生剝離。並且發現,尤其容易於聚醯亞胺膜之端部發生剝離。On the other hand, the inventors of the present invention implemented the process of coating polyimide varnish to prepare polyimide film described in Patent Document 1, and found that when the polyimide varnish is coated to form a polyimide film, the polyimide film is easily peeled off. It is also found that the polyimide film is particularly prone to peeling off at the end of the polyimide film.

本發明之課題在於提供一種積層基板,當於其表面上塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,所形成之聚醯亞胺膜不易發生剝離。 本發明之課題亦在於提供一種積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。 [解決問題之技術手段] The subject of the present invention is to provide a laminate substrate, on the surface of which a polyimide varnish is coated to form a polyimide film, the formed polyimide film is not easy to peel off. The subject of the present invention is also to provide a method for manufacturing a laminate, a laminate, a laminate with a component for an electronic device, and a method for manufacturing an electronic device. [Technical means for solving the problem]

本發明人等進行銳意研究,結果發現,可藉由以下之構成解決上述課題。The inventors of the present invention have conducted intensive research and found that the above-mentioned problem can be solved by the following structure.

(1)一種積層基板,其具有玻璃製之支持基材、及配置於支持基材上之吸附層, 於支持基材之吸附層側之表面具有未配置吸附層之周緣區域, 吸附層具有支持基材側之第1主面、與第1主面為相反側之第2主面、及連接第1主面與第2主面之端面, 端面為自第2主面起,越往第1主面越突出之傾斜面,且 傾斜面與第1主面所成之角度未達10°。 (2)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為50 μm以下。 (3)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為12 μm以下。 (4)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為6 μm以上。 (5)如(1)所記載之積層基板,其中傾斜面與第1主面所成之角度為5°以下。 (6)如(1)至(5)中任一項所記載之積層基板,其中周緣區域之寬度為1~30 mm。 (7)如(1)至(6)中任一項所記載之積層基板,其中吸附層為矽酮樹脂層。 (8)如(1)至(7)中任一項所記載之積層基板,其進而具備配置於吸附層上之保護膜。 (9)一種如(1)至(8)中任一項所記載之積層基板之製造方法,其具有:支持基材與轉印膜之貼合步驟,該步驟係於支持基材上貼合具有成為吸附層之前驅物膜之轉印膜,此時將支持基材與轉印膜配置為使得支持基材上具有未配置前驅物膜之周緣區域;及前驅物膜加熱步驟,其用於自前驅物膜獲得吸附層。 (10)一種積層體之製造方法,其於如(1)至(7)中任一項所記載之積層基板之吸附層側塗佈包含聚醯亞胺或其前驅物及溶劑之聚醯亞胺清漆,於周緣區域上及吸附層上形成聚醯亞胺膜,從而形成依次具有支持基材、吸附層、及聚醯亞胺膜之積層體。 (11)一種積層體,其具有:如(1)至(7)中任一項所記載之積層基板;及 聚醯亞胺膜,其配置於積層基板中之周緣區域上及吸附層上。 (12)一種附電子裝置用構件之積層體,其具有:如(11)所記載之積層體;及 電子裝置用構件,其配置於積層體中之聚醯亞胺膜上。 (13)一種電子裝置之製造方法,其包括:構件形成步驟,其於如(11)所記載之積層體之聚醯亞胺膜上形成電子裝置用構件,獲得附電子裝置用構件之積層體;及 分離步驟,其自附電子裝置用構件之積層體獲得具有聚醯亞胺膜及電子裝置用構件之電子裝置。 [發明之效果] (1) A laminate substrate having a glass support substrate and an adsorption layer disposed on the support substrate, The surface of the support substrate on the adsorption layer side has a peripheral area where the adsorption layer is not disposed, The adsorption layer has a first main surface on the support substrate side, a second main surface on the opposite side to the first main surface, and an end surface connecting the first main surface and the second main surface, The end surface is an inclined surface that protrudes from the second main surface toward the first main surface, and The angle between the inclined surface and the first main surface is less than 10°. (2) A laminate substrate as described in (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is 50 μm or less. (3) A laminated substrate as described in (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is less than 12 μm. (4) A laminated substrate as described in (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is more than 6 μm. (5) A laminated substrate as described in (1), wherein the angle between the inclined surface and the first main surface is less than 5°. (6) A laminated substrate as described in any one of (1) to (5), wherein the width of the peripheral region is 1 to 30 mm. (7) A laminated substrate as described in any one of (1) to (6), wherein the adsorption layer is a silicone resin layer. (8) A laminate substrate as described in any one of (1) to (7), further comprising a protective film disposed on the adsorption layer. (9) A method for manufacturing a laminate substrate as described in any one of (1) to (8), comprising: a step of laminating a support substrate and a transfer film, the step of laminating a transfer film having a pre-driver film to be the adsorption layer on the support substrate, wherein the support substrate and the transfer film are disposed so that the support substrate has a peripheral area on which the pre-driver film is not disposed; and a pre-driver film heating step, which is used to obtain the adsorption layer from the pre-driver film. (10) A method for manufacturing a laminate, comprising coating a polyimide varnish comprising polyimide or its precursor and a solvent on the side of the adsorption layer of a laminate substrate as described in any one of (1) to (7), forming a polyimide film on the peripheral region and on the adsorption layer, thereby forming a laminate having a supporting substrate, an adsorption layer, and a polyimide film in sequence. (11) A laminate, comprising: a laminate substrate as described in any one of (1) to (7); and a polyimide film disposed on the peripheral region and on the adsorption layer in the laminate substrate. (12) A laminate with an electronic device component, comprising: a laminate as described in (11); and an electronic device component, which is arranged on a polyimide film in the laminate. (13) A method for manufacturing an electronic device, comprising: a component forming step, in which the electronic device component is formed on the polyimide film of the laminate as described in (11) to obtain the laminate with the electronic device component; and a separation step, in which an electronic device having a polyimide film and an electronic device component is obtained from the laminate with the electronic device component. [Effect of the Invention]

根據本發明,可提供一種積層基板,當於其表面上塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,所形成之聚醯亞胺膜不易發生剝離。 根據本發明,可提供一種積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。 According to the present invention, a laminate substrate can be provided, and when a polyimide varnish is coated on the surface of the laminate substrate to form a polyimide film, the formed polyimide film is not easily peeled off. According to the present invention, a method for manufacturing a laminate, a laminate, a laminate with a component for an electronic device, and a method for manufacturing an electronic device can be provided.

以下,參照圖式對本發明之實施方式進行說明。但,以下之實施方式僅為用於說明本發明而例示者,本發明並不限制於以下所示之實施方式。再者,可於不脫離本發明之範圍之情況下,於以下之實施方式中進行各種變化及置換。 使用「~」表示之數值範圍意指包含「~」之前後所記載之數值作為下限值及上限值之範圍。 Hereinafter, the embodiments of the present invention will be described with reference to the drawings. However, the embodiments below are only exemplified for the purpose of describing the present invention, and the present invention is not limited to the embodiments shown below. Furthermore, various changes and substitutions can be made in the embodiments below without departing from the scope of the present invention. The numerical range indicated by "~" means a range including the numerical values recorded before and after "~" as the lower limit and upper limit.

作為本發明之積層基板之特徵點,可例舉:將吸附層之端面設為傾斜面;將傾斜面之傾斜角度調整至特定之範圍;及於支持基材之表面設置有未配置吸附層之周緣區域。 本發明人發現,藉由採用如上所述之構成,可獲得所需之效果。獲得所需效果之詳情並不明瞭,但認為,首先,於支持基材之表面設置周緣區域,以該周緣區域與聚醯亞胺膜相接之方式將聚醯亞胺膜配置於積層基板上,藉此,基於聚醯亞胺膜與玻璃製支持基材之相互作用,聚醯亞胺膜與端部之剝離受到抑制。又認為,藉由將具有特定之傾斜角度之傾斜面設置於端部,可抑制於聚醯亞胺膜與吸附層及支持基材之間產生空隙等,其結果,聚醯亞胺膜之剝離受到抑制。 As the characteristic points of the laminated substrate of the present invention, there are the following examples: the end face of the adsorption layer is set as an inclined surface; the inclination angle of the inclined surface is adjusted to a specific range; and a peripheral area without an adsorption layer is provided on the surface of the supporting substrate. The inventors of the present invention have found that the desired effect can be obtained by adopting the above-mentioned structure. The details of how the desired effect is obtained are not clear, but it is considered that, first, a peripheral area is provided on the surface of the supporting substrate, and the polyimide film is arranged on the laminated substrate in such a manner that the peripheral area is in contact with the polyimide film, thereby suppressing the peeling of the polyimide film from the end due to the interaction between the polyimide film and the glass supporting substrate. It is also believed that by setting a tilted surface with a specific tilt angle at the end, the generation of gaps between the polyimide film and the adsorption layer and the supporting substrate can be suppressed, and as a result, the peeling of the polyimide film is suppressed.

<積層基板> 圖1係模式性地表示本發明之積層基板之一實施方式之剖視圖。圖2係圖1所示之積層基板之俯視圖。 積層基板10具備玻璃製之支持基材12、及配置於支持基材12上之吸附層14。 如圖1及圖2所示,吸附層14具有支持基材12側之第1主面14a、與第1主面14a為相反側之第2主面14b、及連接第1主面14a與第2主面14b之端面14c。 吸附層14之端面14c係自第2主面14b向第1主面14a突出之傾斜面。再者,吸附層14之形狀(主面之形狀)為矩形狀,4個端面14c全部為傾斜面。 又,如圖1及圖2所示,於支持基材12之吸附層14側之表面具有未配置吸附層14之周緣區域12a。換言之,吸附層14以於支持基材12殘留不與吸附層14接觸之邊緣狀之區域(周緣區域12a)之方式配置於支持基材12上。 於如上所述之態樣中,吸附層14之配置區域之面積窄於支持基材12之表面(主面)之面積,上述周緣區域12a相當於較支持基材12之外周緣位於更靠內側之區域。 再者,於圖1及圖2中,支持基材12之形狀(主面之形狀)及吸附層14之形狀(主面之形狀)均為矩形狀,以構成支持基材12之外周緣之一邊與構成吸附層14之外周緣之一邊平行之方式於支持基材12上配置有吸附層14。 <Multilayer substrate> FIG. 1 is a cross-sectional view schematically showing one embodiment of the multilayer substrate of the present invention. FIG. 2 is a top view of the multilayer substrate shown in FIG. 1. The multilayer substrate 10 has a glass support substrate 12 and an adsorption layer 14 disposed on the support substrate 12. As shown in FIG. 1 and FIG. 2, the adsorption layer 14 has a first main surface 14a on the side of the support substrate 12, a second main surface 14b on the opposite side to the first main surface 14a, and an end surface 14c connecting the first main surface 14a and the second main surface 14b. The end surface 14c of the adsorption layer 14 is an inclined surface protruding from the second main surface 14b to the first main surface 14a. Furthermore, the shape of the adsorption layer 14 (the shape of the main surface) is rectangular, and all four end surfaces 14c are inclined surfaces. In addition, as shown in Figures 1 and 2, the surface of the adsorption layer 14 side of the support substrate 12 has a peripheral area 12a where the adsorption layer 14 is not arranged. In other words, the adsorption layer 14 is arranged on the support substrate 12 in a manner that leaves an edge-shaped area (peripheral area 12a) that is not in contact with the adsorption layer 14 on the support substrate 12. In the above-mentioned state, the area of the arrangement area of the adsorption layer 14 is narrower than the area of the surface (main surface) of the support substrate 12, and the above-mentioned peripheral area 12a is equivalent to an area located more inward than the outer periphery of the support substrate 12. Furthermore, in FIG. 1 and FIG. 2 , the shape of the support substrate 12 (the shape of the main surface) and the shape of the adsorption layer 14 (the shape of the main surface) are both rectangular, and the adsorption layer 14 is arranged on the support substrate 12 in such a manner that one side constituting the outer periphery of the support substrate 12 is parallel to one side constituting the outer periphery of the adsorption layer 14.

於積層基板10之支持基材12之周緣區域上、及吸附層14之第2主面14b上塗佈聚醯亞胺清漆,其後,形成聚醯亞胺膜,下文中將詳細敍述。於該聚醯亞胺膜上形成電子裝置用構件,其後,對形成有電子裝置用構件之聚醯亞胺膜(即,電子裝置)進行分離。如此,製造電子裝置。 以下,對於構成積層基板10之各層(支持基材12、吸附層14)進行詳細敍述,其後,對於積層基板10之製造方法進行詳細敍述。 A polyimide varnish is applied on the peripheral area of the supporting substrate 12 of the laminate substrate 10 and on the second main surface 14b of the adsorption layer 14, and then a polyimide film is formed, which will be described in detail below. A component for an electronic device is formed on the polyimide film, and then the polyimide film (i.e., the electronic device) on which the component for an electronic device is formed is separated. In this way, an electronic device is manufactured. Below, each layer (supporting substrate 12, adsorption layer 14) constituting the laminate substrate 10 is described in detail, and then the manufacturing method of the laminate substrate 10 is described in detail.

(支持基材) 支持基材12係支持並補強聚醯亞胺膜之構件,例如為玻璃板。 作為玻璃之種類,較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高二氧化矽玻璃、以其他氧化矽為主要成分之氧化物系玻璃。作為氧化物系玻璃,較佳為由氧化物換算所得之氧化矽之含量為40~90質量%之玻璃。 作為玻璃板,更具體而言,可例舉:包含無鹼硼矽酸玻璃之玻璃板(AGC股份有限公司製造之商品名「AN100」、「AN Wizus」)等。 關於玻璃板之製造方法,通常可使玻璃原料熔融,使熔融玻璃成形成板狀而獲得。此種成形方法可為通常方法,例如可例舉:浮式法、熔融法、流孔下引法。 (Support substrate) The support substrate 12 is a member that supports and reinforces the polyimide film, such as a glass plate. As the type of glass, preferably, it is alkali-free borosilicate glass, borosilicate glass, sodium calcium glass, high silica glass, and oxide-based glass with other silicon oxide as the main component. As oxide-based glass, preferably, it is glass with a silicon oxide content of 40 to 90% by mass converted from oxides. As a glass plate, more specifically, it can be exemplified by: a glass plate containing alkali-free borosilicate glass (trade names "AN100" and "AN Wizus" manufactured by AGC Co., Ltd.). Regarding the manufacturing method of the glass plate, it can usually be obtained by melting glass raw materials and forming the molten glass into a plate shape. Such a forming method can be a common method, for example, it can be exemplified by: a floating method, a melting method, and a flow hole down-drawing method.

支持基材12之形狀(主面之形狀)無特別限制,較佳為矩形狀。The shape of the support substrate 12 (shape of the main surface) is not particularly limited, but is preferably a rectangular shape.

如上所述,於支持基材12表面之周緣區域12a上未配置吸附層14。即,支持基材12之周緣區域12a之表面露出。 周緣區域12a之寬度W無特別限制,較佳為1~30 mm,更佳為3~10 mm。如圖2所示,所謂周緣區域12a之寬度W相當於自支持基材12之外周緣至吸附層14之外周緣為止之距離。 只要周緣區域12a之寬度為30 mm以下,則形成下述電子裝置時之有效面積變得更大,從而提高電子裝置之製作效率。又,藉由使周緣區域12a之寬度為1 mm以上,聚醯亞胺膜變得更難發生剝離。 As described above, the adsorption layer 14 is not arranged on the peripheral area 12a of the surface of the supporting substrate 12. That is, the surface of the peripheral area 12a of the supporting substrate 12 is exposed. The width W of the peripheral area 12a is not particularly limited, preferably 1 to 30 mm, and more preferably 3 to 10 mm. As shown in FIG. 2, the width W of the peripheral area 12a is equivalent to the distance from the outer periphery of the supporting substrate 12 to the outer periphery of the adsorption layer 14. As long as the width of the peripheral area 12a is 30 mm or less, the effective area when forming the following electronic device becomes larger, thereby improving the manufacturing efficiency of the electronic device. In addition, by making the width of the peripheral area 12a more than 1 mm, the polyimide film becomes more difficult to peel off.

支持基材12較佳為可撓性低。因此,支持基材12之厚度較佳為0.3 mm以上,更佳為0.5 mm以上。 另一方面,支持基材12之厚度較佳為1.0 mm以下。 The support substrate 12 preferably has low flexibility. Therefore, the thickness of the support substrate 12 is preferably greater than 0.3 mm, and more preferably greater than 0.5 mm. On the other hand, the thickness of the support substrate 12 is preferably less than 1.0 mm.

(吸附層) 吸附層14係用於防止配置於其上之聚醯亞胺膜發生剝離之膜。 吸附層14以於支持基材12殘留不與吸附層14接觸之周緣區域12a之方式配置於支持基材12上。 (Adsorption layer) The adsorption layer 14 is a film used to prevent the polyimide film disposed thereon from peeling off. The adsorption layer 14 is disposed on the support substrate 12 in such a manner that a peripheral region 12a that is not in contact with the adsorption layer 14 is left on the support substrate 12.

如上所述,吸附層14之端面14c係自第2主面14b向第1主面14a突出之傾斜面。較佳為複數個端面14c全部為傾斜面。As described above, the end surface 14c of the adsorption layer 14 is an inclined surface protruding from the second main surface 14b toward the first main surface 14a. It is preferred that all of the plurality of end surfaces 14c are inclined surfaces.

於吸附層14中,傾斜面與第1主面14a所成之角度θ未達10°。其中,要想於塗佈聚醯亞胺清漆而形成聚醯亞胺膜時更加抑制聚醯亞胺膜發生剝離,角度θ較佳為8°以下,更佳為5°以下。下限無特別限制,較佳為1°以上。 吸附層14中之傾斜面與第1主面14a所成之角度θ係使用三鷹光器股份有限公司製造之非接觸表面性狀測定裝置「PF-60」,根據吸附層14之剖面形狀而求取。更詳細而言,如圖1所示,根據吸附層14之剖視圖,測定線段AB之長度及線段AC之長度,根據下述式計算角度θ。 θ=arctan(AC/AB) In the adsorption layer 14, the angle θ formed by the inclined surface and the first main surface 14a is less than 10°. In order to further suppress the peeling of the polyimide film when the polyimide varnish is applied to form the polyimide film, the angle θ is preferably 8° or less, and more preferably 5° or less. There is no special restriction on the lower limit, and it is preferably 1° or more. The angle θ formed by the inclined surface in the adsorption layer 14 and the first main surface 14a is obtained based on the cross-sectional shape of the adsorption layer 14 using the non-contact surface property measuring device "PF-60" manufactured by Mitaka Optical Co., Ltd. In more detail, as shown in FIG1, based on the cross-sectional view of the adsorption layer 14, the length of the line segment AB and the length of the line segment AC are measured, and the angle θ is calculated according to the following formula. θ=arctan(AC/AB)

吸附層14可為有機層,亦可為無機層。 作為有機層之材質,例如可例舉:丙烯酸樹脂、聚烯烴樹脂、聚胺基甲酸酯樹脂、聚醯亞胺樹脂、矽酮樹脂、聚醯亞胺矽酮樹脂、氟樹脂。又,亦可將若干種類之樹脂加以混合而構成吸附層14。 作為無機層之材質,例如可例舉:氧化物、氮化物、氮氧化物、碳化物、碳氮化物、矽化物、氟化物。作為氧化物(較佳為金屬氧化物)、氮化物(較佳為金屬氮化物)、氮氧化物(較佳為金屬氮氧化物),例如可例舉:選自Si、Hf、Zr、Ta、Ti、Y、Nb、Na、Co、Al、Zn、Pb、Mg、Bi、La、Ce、Pr、Sm、Eu、Gd、Dy、Er、Sr、Sn、In及Ba之1種以上之元素之氧化物、氮化物、氮氧化物。 作為碳化物(較佳為金屬碳化物)、碳氮化物(較佳為金屬碳氮化物),例如可例舉:選自Ti、W、Si、Zr及Nb之1種以上之元素之碳化物、碳氮化物、碳氧化物。 作為矽化物(較佳為金屬矽化物),例如可例舉:選自Mo、W及Cr之1種以上之元素之矽化物。 作為氟化物(較佳為金屬氟化物),例如可例舉:選自Mg、Y、La及Ba之1種以上之元素之氟化物。 The adsorption layer 14 may be an organic layer or an inorganic layer. As materials for the organic layer, for example, acrylic resin, polyolefin resin, polyurethane resin, polyimide resin, silicone resin, polyimide silicone resin, and fluororesin can be cited. In addition, several types of resins can be mixed to form the adsorption layer 14. As materials for the inorganic layer, for example, oxides, nitrides, oxynitrides, carbides, carbonitrides, silicides, and fluorides can be cited. Examples of oxides (preferably metal oxides), nitrides (preferably metal nitrides), and oxynitrides (preferably metal oxynitrides) include oxides, nitrides, and oxynitrides of one or more elements selected from Si, Hf, Zr, Ta, Ti, Y, Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, Pr, Sm, Eu, Gd, Dy, Er, Sr, Sn, In, and Ba. Examples of carbides (preferably metal carbides) and carbonitrides (preferably metal carbonitrides) include carbides, carbonitrides, and carbon oxides of one or more elements selected from Ti, W, Si, Zr, and Nb. As silicide (preferably metal silicide), for example, silicide of one or more elements selected from Mo, W and Cr can be cited. As fluoride (preferably metal fluoride), for example, fluoride of one or more elements selected from Mg, Y, La and Ba can be cited.

吸附層14亦可為電漿聚合膜。 於吸附層14為電漿聚合膜之情形時,作為形成電漿聚合膜之材料,可例舉:CF 4、CHF 3、C 2H 6、C 3H 6、C 2H 2、CH 3F、C 4H 8等氟碳單體;甲烷、乙烷、丙烷、乙烯、丙烯、乙炔、苯、甲苯等碳氫單體;氫、SF 6等。 The adsorption layer 14 may also be a plasma polymerization film. When the adsorption layer 14 is a plasma polymerization film, the material for forming the plasma polymerization film may include: fluorocarbon monomers such as CF4 , CHF3 , C2H6 , C3H6 , C2H2 , CH3F , C4H8 ; carbon hydrogen monomers such as methane, ethane, propane , ethylene, propylene, acetylene , benzene , toluene; hydrogen, SF6 , etc.

其中,就耐熱性或剝離性之方面而言,作為吸附層14之材質,較佳為矽酮樹脂、聚醯亞胺矽酮樹脂,更佳為矽酮樹脂,尤佳為由縮合反應型矽酮所形成之矽酮樹脂。 以下,對於吸附層為矽酮樹脂層之形態進行詳細敍述。 Among them, in terms of heat resistance or peeling properties, the material of the adsorption layer 14 is preferably silicone resin or polyimide silicone resin, more preferably silicone resin, and particularly preferably silicone resin formed by condensation reaction type silicone. The following describes in detail the form of the adsorption layer being a silicone resin layer.

所謂矽酮樹脂係包含特定之有機矽氧烷單元之樹脂,通常使硬化性矽酮硬化而獲得。硬化性矽酮根據其硬化機制而分類成加成反應型矽酮、縮合反應型矽酮、紫外線硬化型矽酮及電子束硬化型矽酮,該等均可使用。其中,較佳為縮合反應型矽酮。 作為縮合反應型矽酮,可較佳地使用作為單體之水解性有機矽烷化合物或其混合物(單體混合物)、或者使單體或單體混合物發生部分水解縮合反應而獲得之部分水解縮合物(有機聚矽氧烷)。 藉由使用該縮合反應型矽酮,進行水解-縮合反應(溶膠凝膠反應),可形成矽酮樹脂。 The so-called silicone resin is a resin containing a specific organic siloxane unit, which is usually obtained by curing a curable silicone. Curable silicones are classified into addition reaction type silicones, condensation reaction type silicones, ultraviolet curing type silicones, and electron beam curing type silicones according to their curing mechanism, and all of them can be used. Among them, condensation reaction type silicones are preferred. As condensation reaction type silicones, hydrolyzable organic silane compounds or mixtures thereof (monomer mixtures) as monomers, or partially hydrolyzed condensates (organopolysiloxanes) obtained by partially hydrolyzing and condensing monomers or monomer mixtures can be preferably used. By using this condensation reaction type silicone and carrying out a hydrolysis-condensation reaction (sol-gel reaction), a silicone resin can be formed.

吸附層14較佳為使用包含硬化性矽酮之硬化性組合物而形成。 硬化性組合物除了包含硬化性矽酮以外,亦可包含溶劑、鉑觸媒(使用加成反應型矽酮作為硬化性矽酮之情形)、調平劑、金屬化合物等。作為金屬化合物中所含之金屬元素,例如可例舉:3d過渡金屬、4d過渡金屬、鑭系元素系金屬、鉍(Bi)、鋁(Al)、錫(Sn)。金屬化合物之含量無特別限制,可適當調整。 The adsorption layer 14 is preferably formed using a curable composition containing curable silicone. In addition to curable silicone, the curable composition may also contain a solvent, a platinum catalyst (when an addition reaction type silicone is used as the curable silicone), a leveling agent, a metal compound, etc. Examples of metal elements contained in the metal compound include: 3d transition metals, 4d transition metals, iodine metals, bismuth (Bi), aluminum (Al), and tin (Sn). The content of the metal compound is not particularly limited and can be appropriately adjusted.

吸附層14較佳為具有羥基。構成吸附層14之矽酮樹脂之Si-O-Si鍵之一部分被切斷,而可出現羥基。又,於使用縮合反應型矽酮之情形時,其羥基能夠成為吸附層14之羥基。The adsorption layer 14 preferably has a hydroxyl group. A portion of the Si-O-Si bonds of the silicone resin constituting the adsorption layer 14 is cut to generate a hydroxyl group. In addition, when a condensation reaction type silicone is used, the hydroxyl group can become a hydroxyl group of the adsorption layer 14.

吸附層14之第1主面14a與第2主面14b之間之厚度較佳為50 μm以下,更佳為30 μm以下,進而較佳為12 μm以下。另一方面,吸附層14之厚度較佳為超過1 μm,要想使異物嵌埋性更加優異,更佳為6 μm以上。上述厚度係藉由接觸式膜厚測定裝置測定5點以上之任意位置之吸附層14之厚度,並將其等進行算術平均而得之值。 再者,所謂異物嵌埋性優異意指,即便於支持基材12與吸附層14之間具有異物,異物亦會被吸附層14嵌埋。若異物之嵌埋性優異,則吸附層不易產生由異物引起之凸部,當於聚醯亞胺膜上形成電子裝置用構件時,可抑制由凸部所引起之電子裝置用構件中之斷線等風險。再者,由於產生上述凸部時所形成之空隙係以氣泡之形式被觀察到,故而可藉由有無產生氣泡來評價異物嵌埋性。 The thickness between the first main surface 14a and the second main surface 14b of the adsorption layer 14 is preferably 50 μm or less, more preferably 30 μm or less, and further preferably 12 μm or less. On the other hand, the thickness of the adsorption layer 14 is preferably more than 1 μm, and more preferably 6 μm or more to achieve better foreign matter embedding performance. The above thickness is the value obtained by measuring the thickness of the adsorption layer 14 at any position of more than 5 points by a contact-type film thickness measuring device and arithmetically averaging the same. Furthermore, the so-called excellent foreign matter embedding performance means that even if there is foreign matter between the supporting substrate 12 and the adsorption layer 14, the foreign matter will be embedded by the adsorption layer 14. If the embedding property of foreign matter is excellent, it is not easy for the adsorption layer to produce convex parts caused by foreign matter. When forming components for electronic devices on the polyimide film, the risk of disconnection in the components for electronic devices caused by convex parts can be suppressed. Furthermore, since the gaps formed when the above-mentioned convex parts are generated are observed in the form of bubbles, the embedding property of foreign matter can be evaluated by whether bubbles are generated.

若於玻璃製之支持基材12上形成聚醯亞胺膜,並進行高溫熱處理,則聚醯亞胺膜發生黃變,故而難以應用於透明之電子裝置。然而,其機制雖並不明確,但藉由在玻璃上形成吸附層14,於吸附層14上形成聚醯亞胺膜,可抑制由高溫熱處理所導致之聚醯亞胺膜之黃變。If a polyimide film is formed on a glass support substrate 12 and subjected to a high-temperature heat treatment, the polyimide film will yellow, making it difficult to apply to transparent electronic devices. However, although the mechanism is not clear, by forming an adsorption layer 14 on glass and forming a polyimide film on the adsorption layer 14, yellowing of the polyimide film caused by the high-temperature heat treatment can be suppressed.

(保護膜) 積層基板10亦可具有以覆蓋吸附層14之方式配置之保護膜。保護膜係在將下述聚醯亞胺清漆塗佈於吸附層14上之前保護吸附層14之表面的膜。 (Protective film) The laminated substrate 10 may also have a protective film arranged to cover the adsorption layer 14. The protective film is a film that protects the surface of the adsorption layer 14 before the polyimide varnish described below is applied on the adsorption layer 14.

作為構成保護膜之材料,例如可例舉:聚醯亞胺樹脂、聚酯樹脂(例如,聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯)、聚烯烴樹脂(例如,聚乙烯、聚丙烯)、聚胺基甲酸酯樹脂。其中,較佳為聚酯樹脂,更佳為聚對苯二甲酸乙二酯。Examples of materials for forming the protective film include polyimide resins, polyester resins (e.g., polyethylene terephthalate (PET), polyethylene naphthalate), polyolefin resins (e.g., polyethylene, polypropylene), and polyurethane resins. Among them, polyester resins are preferred, and polyethylene terephthalate is more preferred.

為了減少自外部所受到之力之影響,保護膜之厚度較佳為20 μm以上,更佳為30 μm以上,進而較佳為50 μm以上。作為保護膜之厚度之上限值,較佳為500 μm以下,更佳為300 μm以下,進而較佳為100 μm以下。In order to reduce the influence of the force received from the outside, the thickness of the protective film is preferably 20 μm or more, more preferably 30 μm or more, and further preferably 50 μm or more. The upper limit of the thickness of the protective film is preferably 500 μm or less, more preferably 300 μm or less, and further preferably 100 μm or less.

保護膜亦可於吸附層14側之表面進而具有密接層。 作為密接層,可使用公知之黏著層。作為構成黏著層之黏著劑,例如可例舉:(甲基)丙烯酸系黏著劑、矽酮系黏著劑、聚胺基甲酸酯系黏著劑。 又,密接層亦可由樹脂構成,作為樹脂,例如可例舉:乙酸乙烯酯樹脂、乙烯-乙酸乙烯酯共聚物樹脂、氯乙烯-乙酸乙烯酯共聚樹脂、(甲基)丙烯酸樹脂、丁醛樹脂、聚胺基甲酸酯樹脂、聚苯乙烯彈性體。 為了於剝離保護膜時減少剝離力,保護膜之表面粗糙度(Ra)較佳為50 nm以下,更佳為30 nm以下,進而較佳為15 nm以下。又,為了可維持保護膜與吸附層密接之狀態,Ra較佳為0.1 nm以上,更佳為0.5 nm以上。表面粗糙度(Ra)係使用Ryoka Systems公司製造之非接觸表面-層剖面形狀計測系統「Vertscan R3300-lite」進行測定。 The protective film may also have a close contact layer on the surface of the adsorption layer 14 side. As the close contact layer, a known adhesive layer can be used. As the adhesive constituting the adhesive layer, for example, (meth) acrylic adhesive, silicone adhesive, polyurethane adhesive. In addition, the close contact layer may also be composed of resin, and as the resin, for example, vinyl acetate resin, ethylene-vinyl acetate copolymer resin, vinyl chloride-vinyl acetate copolymer resin, (meth) acrylic resin, butyral resin, polyurethane resin, polystyrene elastomer can be cited. In order to reduce the peeling force when peeling the protective film, the surface roughness (Ra) of the protective film is preferably less than 50 nm, more preferably less than 30 nm, and further preferably less than 15 nm. In addition, in order to maintain the close contact between the protective film and the adsorption layer, Ra is preferably greater than 0.1 nm, and more preferably greater than 0.5 nm. The surface roughness (Ra) is measured using the non-contact surface-layer cross-section shape measurement system "Vertscan R3300-lite" manufactured by Ryoka Systems.

<積層基板之製造方法> 積層基板之製造方法無特別限制,可例舉公知之方法。 其中,要想生產性更加優異,可例舉如下方法,即,準備具有臨時支持體及配置於臨時支持體上且加熱處理後成為吸附層之前驅物膜的轉印膜,將轉印膜中之前驅物膜貼合於玻璃製之支持基材上之特定位置,對於所獲得之具有玻璃製之支持基材、前驅物膜及臨時支持體之積層體實施加熱處理。藉由實施加熱處理,可使前驅物膜之端部流化,形成上述具有特定之傾斜面之吸附層。再者,當將前驅物膜貼合於支持基材上時,以形成上述周緣區域之方式將前驅物膜貼合於支持基材上。 又,除上述以外,亦可藉由塗佈而將加熱處理後成為吸附層之前驅物膜配置於玻璃製支持基材之特定位置,實施加熱處理,藉此形成上述具有特定之傾斜面之吸附層。 作為上述前驅物膜,例如可例舉:對塗佈包含硬化性矽酮之硬化性組合物所形成之塗膜實施加熱處理而形成之膜。作為塗膜之加熱處理之加熱溫度,較佳為50~200℃,作為加熱時間,較佳為5~20分鐘。 <Method for manufacturing a laminate substrate> The method for manufacturing a laminate substrate is not particularly limited, and a known method can be cited as an example. Among them, in order to achieve better productivity, the following method can be cited as an example, that is, preparing a transfer film having a temporary support and a pre-drive film arranged on the temporary support and becoming an adsorption layer after heat treatment, bonding the pre-drive film in the transfer film to a specific position on a glass support substrate, and applying heat treatment to the obtained laminate having a glass support substrate, the pre-drive film and the temporary support. By applying heat treatment, the end of the pre-drive film can be fluidized to form the above-mentioned adsorption layer with a specific inclined surface. Furthermore, when the precursor film is bonded to the support substrate, the precursor film is bonded to the support substrate in a manner to form the above-mentioned peripheral area. In addition, in addition to the above, the precursor film that becomes the adsorption layer after heat treatment can be arranged at a specific position of the glass support substrate by coating, and heat treatment can be performed to form the above-mentioned adsorption layer with a specific slope. As the above-mentioned precursor film, for example, a film formed by heat treatment of a coating formed by coating a curable composition containing curable silicone. The heating temperature of the heat treatment of the coating is preferably 50 to 200°C, and the heating time is preferably 5 to 20 minutes.

如上所述,藉由對前驅物膜實施加熱處理,可使吸附層之端面形狀成為傾斜面。再者,加熱處理時,較佳為一面施加壓力一面實施。具體而言,較佳為使用高壓釜實施加熱處理及加壓處理。 作為加熱處理時之加熱溫度,較佳為50~350℃,更佳為55~300℃,進而較佳為60~250℃。作為加熱時間,較佳為10~60分鐘,更佳為20~40分鐘。 作為加壓處理時之壓力,較佳為0.5~1.5 MPa,更佳為0.8~1.0 MPa。 As described above, by subjecting the precursor film to heat treatment, the end face shape of the adsorption layer can be made into an inclined surface. Furthermore, during the heat treatment, it is preferred to apply pressure while performing the heat treatment. Specifically, it is preferred to use a high pressure autoclave to perform the heat treatment and the pressure treatment. As the heating temperature during the heat treatment, it is preferably 50 to 350°C, more preferably 55 to 300°C, and further preferably 60 to 250°C. As the heating time, it is preferably 10 to 60 minutes, and more preferably 20 to 40 minutes. As the pressure during the pressure treatment, it is preferably 0.5 to 1.5 MPa, and more preferably 0.8 to 1.0 MPa.

又,加熱處理亦可進行複數次。於實施複數次加熱處理之情形時,可變更每一次之加熱條件。 例如,於實施複數次加熱處理之情形時,可改變加熱溫度。例如,於實施2次加熱處理之情形時,可於未達100℃之溫度條件下實施第1次加熱處理,於100℃以上之溫度條件下實施第2次加熱處理。 又,於實施複數次加熱處理之情形時,可改變有無加壓處理。例如,於實施2次加熱處理之情形時,可按如下方式進行,即,於第1次加熱處理中一併實施加壓處理,於第2次加熱處理中不實施加壓處理。 再者,當使用轉印膜製造積層基板時,可於剝離臨時支持體後,實施上述加熱處理,亦可於臨時支持體配置於吸附層上之狀態下直接實施加熱處理。又,於實施複數次加熱處理之情形時,可於各加熱處理之間剝離臨時支持體。例如,可於實施第1次加熱處理後,剝離臨時支持體,並實施第2次加熱處理。 Furthermore, the heat treatment may be performed multiple times. When the heat treatment is performed multiple times, the heating conditions may be changed each time. For example, when the heat treatment is performed multiple times, the heating temperature may be changed. For example, when the heat treatment is performed twice, the first heat treatment may be performed at a temperature lower than 100°C, and the second heat treatment may be performed at a temperature higher than 100°C. Furthermore, when the heat treatment is performed multiple times, the presence or absence of pressurization may be changed. For example, when the heat treatment is performed twice, the pressurization may be performed in the first heat treatment, and the pressurization may not be performed in the second heat treatment. Furthermore, when a transfer film is used to manufacture a laminated substrate, the above-mentioned heat treatment can be performed after the temporary support is peeled off, or the heat treatment can be performed directly when the temporary support is arranged on the adsorption layer. In addition, when multiple heat treatments are performed, the temporary support can be peeled off between each heat treatment. For example, after the first heat treatment, the temporary support can be peeled off and the second heat treatment can be performed.

可對積層基板之吸附層之表面實施表面處理。 作為表面處理,例如可例舉:電暈處理、電漿處理、紫外線臭氧處理(ultraviolet-ozone treatment),較佳為電暈處理。 於如下所述在吸附層之上形成聚醯亞胺膜之情形時,為了降低聚醯亞胺膜之表面粗糙度,吸附層之表面粗糙度(Ra)較佳為50 nm以下,更佳為30 nm以下,進而較佳為15 nm以下。又,為了可維持聚醯亞胺膜與吸附層密接之狀態,Ra較佳為0.1 nm以上,更佳為0.5 nm以上。 The surface of the adsorption layer of the laminated substrate may be subjected to surface treatment. Examples of surface treatment include: corona treatment, plasma treatment, and ultraviolet-ozone treatment, preferably corona treatment. In the case where a polyimide film is formed on the adsorption layer as described below, in order to reduce the surface roughness of the polyimide film, the surface roughness (Ra) of the adsorption layer is preferably 50 nm or less, more preferably 30 nm or less, and further preferably 15 nm or less. In addition, in order to maintain the close contact between the polyimide film and the adsorption layer, Ra is preferably 0.1 nm or more, and more preferably 0.5 nm or more.

可使用上述積層基板10,製造依次具有支持基材12、吸附層14及被支持材之構造體。作為被支持材,亦可積層聚醯亞胺膜18以外之材料。作為被支持材,例如可例舉:聚醯亞胺樹脂膜、環氧樹脂膜、感光性抗蝕劑、聚酯樹脂膜(例如,聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯)、聚烯烴樹脂膜(例如,聚乙烯、聚丙烯)、聚胺基甲酸酯樹脂膜、金屬箔(例如,銅箔、鋁箔)、濺鍍膜(例如,銅、鈦、鋁、鎢、氮化矽、氧化矽、非晶矽)、TGV(Through Glass Via,玻璃通孔)基板、薄板玻璃基板、附犧牲層之薄板玻璃基板、ABF(Ajinomoto Build-up Film,味之素堆積膜)、藍寶石基板、矽基板、TSV(Through Silicon Via,矽通孔)基板、LED(Light Emitting Diode,發光二極體)晶片、顯示面板(例如,LCD、OLED、μ-LED)、人造鑽石、間隔紙等。The laminated substrate 10 can be used to manufacture a structure having the supporting base material 12, the adsorption layer 14 and the supported material in this order. As the supported material, a material other than the polyimide film 18 can also be laminated. Examples of the support material include polyimide resin films, epoxy resin films, photosensitive resists, polyester resin films (e.g., polyethylene terephthalate, polyethylene naphthalate), polyolefin resin films (e.g., polyethylene, polypropylene), polyurethane resin films, metal foils (e.g., copper foil, aluminum foil), sputtered films (e.g., copper, titanium, aluminum, tungsten, silicon nitride, silicon oxide, amorphous silicon), TGV (Through Glass Via) substrates, thin plate glass substrates, thin plate glass substrates with sacrificial layers, ABF (Ajinomoto Build-up Film), sapphire substrates, silicon substrates, TSV (Through Silicon Via) substrates, LED (Light Emitting Diode) substrates, and the like. Emitting Diode) chips, display panels (e.g., LCD, OLED, μ-LED), artificial diamonds, spacer paper, etc.

<積層體及其製造方法> 使用上述積層基板10,可製造圖3所示之具有支持基材12、吸附層14及聚醯亞胺膜18之積層體16。 具體而言,作為積層體16之製造方法,可例舉如下之方法,即,於積層基板10之吸附層14側塗佈包含聚醯亞胺及溶劑之聚醯亞胺清漆,於周緣區域12a上及吸附層14上形成聚醯亞胺膜18,而形成依次具有支持基材12、吸附層14及聚醯亞胺膜18之積層體。 以下,對於上述製造方法進行詳細敍述,其後,對於聚醯亞胺膜18之構成進行詳細敍述。 <Laminated body and its manufacturing method> Using the above-mentioned laminated substrate 10, a laminated body 16 having a supporting substrate 12, an adsorption layer 14 and a polyimide film 18 as shown in FIG. 3 can be manufactured. Specifically, as a manufacturing method of the laminated body 16, the following method can be cited, that is, a polyimide varnish containing polyimide and a solvent is applied to the adsorption layer 14 side of the laminated substrate 10, and a polyimide film 18 is formed on the peripheral area 12a and on the adsorption layer 14, thereby forming a laminated body having a supporting substrate 12, an adsorption layer 14 and a polyimide film 18 in sequence. The above-mentioned manufacturing method is described in detail below, and then the structure of the polyimide film 18 is described in detail.

(聚醯亞胺清漆) 聚醯亞胺清漆包含聚醯亞胺或其前驅物及溶劑。 聚醯亞胺通常係藉由使四羧酸二酐與二胺縮聚,並進行醯亞胺化而獲得。作為聚醯亞胺,較佳為具有溶劑可溶性。 作為所使用之四羧酸二酐,可例舉:芳香族四羧酸二酐、脂肪族四羧酸二酐。作為所使用之二胺,可例舉:芳香族二胺、脂肪族二胺。 作為芳香族四羧酸二酐,例如可例舉:均苯四甲酸二酐(1,2,4,5-苯四羧酸二酐)、3,3',4,4'-二苯甲酮四羧酸二酐、3,3',4,4'-聯苯四羧酸二酐、3,3',4,4'-二苯醚四羧酸二酐。 作為脂肪族四羧酸二酐,有環式或非環式之脂肪族四羧酸二酐,作為環式脂肪族四羧酸二酐,可例舉:1,2,3,4-環丁烷四羧酸二酐、1,2,4,5-環己烷四羧酸二酐、1,2,4,5-環戊烷四羧酸二酐等,作為非環式脂肪族四羧酸二酐,可例舉:1,2,3,4-丁烷四羧酸二酐、1,2,3,4-戊烷四羧酸二酐等。 作為芳香族二胺,例如可例舉:4,4'-氧基二胺基苯(4,4'-二胺基二苯醚)、1,3-雙(3-胺基苯氧基)苯、4,4'-雙(3-胺基苯氧基)聯苯、1,4-二胺基苯、1,3-二胺基苯。 作為脂肪族二胺,可例舉:乙二胺、六亞甲基二胺、聚乙二醇雙(3-胺基丙基)醚、聚丙二醇雙(3-胺基丙基)醚等非環式脂肪族二胺、1,3-雙(胺基甲基)環己烷、1,4-雙(胺基甲基)環己烷、異佛爾酮二胺、降𦯉烷二胺等環式脂肪族二胺。 (Polyimide varnish) Polyimide varnish contains polyimide or its precursor and solvent. Polyimide is usually obtained by condensing tetracarboxylic dianhydride and diamine and performing imidization. Polyimide is preferably solvent-soluble. As tetracarboxylic dianhydride used, aromatic tetracarboxylic dianhydride and aliphatic tetracarboxylic dianhydride can be cited. As diamine used, aromatic diamine and aliphatic diamine can be cited. Examples of aromatic tetracarboxylic dianhydrides include pyromellitic acid dianhydride (1,2,4,5-benzene tetracarboxylic dianhydride), 3,3',4,4'-benzophenone tetracarboxylic dianhydride, 3,3',4,4'-biphenyl tetracarboxylic dianhydride, and 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride. Aliphatic tetracarboxylic dianhydrides include cyclic or non-cyclic aliphatic tetracarboxylic dianhydrides. Examples of cyclic aliphatic tetracarboxylic dianhydrides include 1,2,3,4-cyclobutane tetracarboxylic dianhydride, 1,2,4,5-cyclohexane tetracarboxylic dianhydride, and 1,2,4,5-cyclopentane tetracarboxylic dianhydride. Examples of non-cyclic aliphatic tetracarboxylic dianhydrides include 1,2,3,4-butane tetracarboxylic dianhydride and 1,2,3,4-pentane tetracarboxylic dianhydride. Examples of aromatic diamines include 4,4'-oxydiaminobenzene (4,4'-diaminodiphenyl ether), 1,3-bis(3-aminophenoxy)benzene, 4,4'-bis(3-aminophenoxy)biphenyl, 1,4-diaminobenzene, and 1,3-diaminobenzene. Examples of aliphatic diamines include non-cyclic aliphatic diamines such as ethylenediamine, hexamethylenediamine, polyethylene glycol bis(3-aminopropyl) ether, and polypropylene glycol bis(3-aminopropyl) ether, and cyclic aliphatic diamines such as 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, isophoronediamine, and norbatanediamine.

所謂聚醯亞胺之前驅物意指為進行醯亞胺化前之狀態之聚醯胺酸(即所謂聚醯胺酸(polyamic acid)及/或聚醯胺酸酯)。The so-called precursor of polyimide refers to polyamide before imidization (i.e., polyamic acid and/or polyamide ester).

溶劑只要為使聚醯亞胺或其前驅物溶解之溶劑即可,例如可例舉:酚系溶劑(例如間甲酚)、醯胺系溶劑(例如,N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺)、內酯系溶劑(例如,γ-丁內酯、δ-戊內酯、ε-己內酯、γ-巴豆酸內酯、γ-己內酯、α-甲基-γ-丁內酯、γ-戊內酯、α-乙醯基-γ-丁內酯、δ-己內酯)、亞碸系溶劑(例如,N,N-二甲基亞碸)、酮系溶劑(例如,丙酮、甲基乙基酮、甲基異丁基酮、環己酮)、酯系溶劑(例如,乙酸甲酯、乙酸乙酯、乙酸丁酯、碳酸二甲酯)。The solvent may be any solvent capable of dissolving the polyimide or its precursor, and examples thereof include phenolic solvents (e.g., m-cresol), amide solvents (e.g., N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide), lactone solvents (e.g., γ-butyrolactone, δ-valerolactone, ε-caprolactone, γ-crotonolactone, γ-caprolactone, α-methyl-γ-butyrolactone, γ-valerolactone, α-acetyl-γ-butyrolactone, δ-caprolactone), sulfoxide solvents (e.g., N,N-dimethylsulfoxide), ketone solvents (e.g., acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone), and ester solvents (e.g., methyl acetate, ethyl acetate, butyl acetate, dimethyl carbonate).

(順序) 於積層基板10之吸附層14側塗佈聚醯亞胺清漆之方法無特別限制,可例舉公知之方法。例如可例舉:噴塗法、模嘴塗佈法、旋轉塗佈法、浸漬塗佈法、輥塗法、棒式塗佈法、網版印刷法、凹版塗佈法。 (Sequence) The method of coating the polyimide varnish on the adsorption layer 14 side of the laminate substrate 10 is not particularly limited, and a known method can be cited. For example, spray coating, die nozzle coating, rotary coating, dip coating, roller coating, rod coating, screen printing, and gravure coating can be cited.

塗佈後,可視需要實施加熱處理。 作為加熱處理之條件,溫度條件較佳為50~500℃,更佳為50~450℃。加熱時間較佳為10~300分鐘,更佳為20~200分鐘。 又,加熱處理可進行複數次。於實施複數次加熱處理之情形時,可變更每一次之加熱條件。 After coating, heat treatment can be performed as needed. As a condition for heat treatment, the temperature condition is preferably 50 to 500°C, more preferably 50 to 450°C. The heating time is preferably 10 to 300 minutes, more preferably 20 to 200 minutes. In addition, the heat treatment can be performed multiple times. When performing multiple heat treatments, the heating conditions can be changed each time.

(積層體) 如圖3所示,積層體16具有支持基材12、吸附層14及聚醯亞胺膜18。 支持基材12及吸附層14之構成如上所述。 (Laminate) As shown in FIG. 3, the laminate 16 has a support substrate 12, an adsorption layer 14, and a polyimide film 18. The structures of the support substrate 12 and the adsorption layer 14 are as described above.

聚醯亞胺膜18配置於支持基材12之周緣區域上及吸附層14上(吸附層14之第2主面14b上及端面14c上)。The polyimide film 18 is disposed on the peripheral region of the support substrate 12 and on the adsorption layer 14 (on the second main surface 14b and the end surface 14c of the adsorption layer 14).

聚醯亞胺膜18之厚度較佳為1 μm以上,更佳為5 μm以上。就柔軟性之方面而言,較佳為1 mm以下,更佳為0.2 mm以下。 為了於聚醯亞胺膜18上形成電子裝置之高精細之配線等,聚醯亞胺膜18之表面較佳為平滑。具體而言,聚醯亞胺膜18之表面粗糙度Ra較佳為50 nm以下,更佳為30 nm以下,進而較佳為10 nm以下。 關於聚醯亞胺膜18之熱膨脹係數,與支持基材12之熱膨脹係數差較小時能夠抑制加熱後或冷卻後之積層體16之翹曲,故較佳。具體而言,聚醯亞胺膜18與支持基材12之熱膨脹係數之差較佳為0~90×10 -6/℃,更佳為0~30×10 -6/℃。 聚醯亞胺膜18之面積無特別限制,就電子裝置之生產性之方面而言,較佳為300 cm 2以上。 聚醯亞胺膜18可有顏色,亦可為無色透明。 The thickness of the polyimide film 18 is preferably 1 μm or more, more preferably 5 μm or more. In terms of flexibility, it is preferably 1 mm or less, more preferably 0.2 mm or less. In order to form high-precision wiring of electronic devices on the polyimide film 18, the surface of the polyimide film 18 is preferably smooth. Specifically, the surface roughness Ra of the polyimide film 18 is preferably 50 nm or less, more preferably 30 nm or less, and further preferably 10 nm or less. Regarding the thermal expansion coefficient of the polyimide film 18, it is better to have a smaller difference with the thermal expansion coefficient of the supporting substrate 12 because it can suppress the warping of the laminate 16 after heating or cooling. Specifically, the difference in thermal expansion coefficient between the polyimide film 18 and the supporting substrate 12 is preferably 0 to 90×10 -6 /°C, more preferably 0 to 30×10 -6 /°C. The area of the polyimide film 18 is not particularly limited, but is preferably 300 cm 2 or more in terms of productivity of electronic devices. The polyimide film 18 may be colored or colorless and transparent.

積層體16可用於各種用途,例如可例舉製造下述顯示裝置用面板、PV、薄膜二次電池、表面形成有電路之半導體晶圓、接收感測器面板等電子零件之用途。於該等用途中,亦存在如下情形,即,積層體於大氣氛圍下在高溫條件(例如,450℃以上)下暴露(例如,20分鐘以上)。 顯示裝置用面板包含LCD、OLED、電子紙、電漿顯示面板、場發射面板、量子點LED面板、微LED顯示面板、MEMS(microelectromechanical system,微機電系統)快門面板等。 接收感測器面板包含電磁波接收感測器面板、X射線受光感測器面板、紫外線受光感測器面板、可見光線受光感測器面板、紅外線受光感測器面板等。接收感測器面板所使用之基板可藉由樹脂等補強片材等加以補強。 The laminate 16 can be used for various purposes, such as the manufacture of electronic components such as panels for display devices, PV, thin-film secondary batteries, semiconductor wafers with circuits formed on the surface, and receiving sensor panels. In these uses, there is also a situation where the laminate is exposed to high temperature conditions (for example, above 450°C) in an atmospheric atmosphere (for example, for more than 20 minutes). Panels for display devices include LCD, OLED, electronic paper, plasma display panels, field emission panels, quantum dot LED panels, micro LED display panels, MEMS (microelectromechanical system) shutter panels, etc. Receiving sensor panels include electromagnetic wave receiving sensor panels, X-ray photosensitive sensor panels, ultraviolet photosensitive sensor panels, visible light photosensitive sensor panels, infrared photosensitive sensor panels, etc. The substrate used in the receiving sensor panel can be reinforced by reinforcing sheets such as resin.

<電子裝置之製造方法> 可使用積層體,製造包含聚醯亞胺膜及下述電子裝置用構件之電子裝置。 電子裝置之製造方法例如圖4及5所示,為具備如下步驟之方法,即,構件形成步驟,其於積層體16之聚醯亞胺膜18上(聚醯亞胺膜18之與吸附層14側為相反側之表面上)形成電子裝置用構件20,獲得附電子裝置用構件之積層體22;及分離步驟,其自附電子裝置用構件之積層體22獲得具有聚醯亞胺膜18及電子裝置用構件20之電子裝置24。 <Method for manufacturing electronic device> An electronic device including a polyimide film and the following electronic device component can be manufactured using a laminate. The method for manufacturing an electronic device is a method having the following steps, as shown in, for example, FIGS. 4 and 5 , namely, a component forming step, in which an electronic device component 20 is formed on the polyimide film 18 of the laminate 16 (on the surface of the polyimide film 18 opposite to the adsorption layer 14 side) to obtain a laminate 22 with an electronic device component attached; and a separation step, in which an electronic device 24 having a polyimide film 18 and an electronic device component 20 is obtained from the laminate 22 with an electronic device component attached.

以下,將形成電子裝置用構件20之步驟稱為「構件形成步驟」,將分離成電子裝置24與附吸附層之支持基材26之步驟稱為「分離步驟」。 以下,對於各步驟中所使用之材料及順序進行詳細敍述。 Hereinafter, the step of forming the component 20 for the electronic device is referred to as the "component forming step", and the step of separating into the electronic device 24 and the supporting substrate 26 with the adsorption layer is referred to as the "separation step". The materials and sequence used in each step are described in detail below.

(構件形成步驟) 構件形成步驟係於積層體16之聚醯亞胺膜18上形成電子裝置用構件之步驟。更具體而言,如圖4所示,於聚醯亞胺膜18上(聚醯亞胺膜18之與吸附層14側為相反側之表面上)形成電子裝置用構件20,獲得附電子裝置用構件之積層體22。 再者,為了提高電子裝置之可靠性,可於聚醯亞胺膜18上形成障壁層。障壁層之材料無特別限制,可使用公知之材料。作為構成障壁層之材料,例如可例舉氮化矽、氧化矽。又,障壁層可為1層,可為2層以上,亦可組合複數種材料。成膜方法無特別限制,可例舉公知之方法。例如可例舉:電漿CVD(Chemical Vapor Deposition,化學氣相沈積)、濺鍍等方法。 首先,對於本步驟中所使用之電子裝置用構件20進行詳細敍述,其後,對於步驟之順序進行詳細敍述。 (Component formation step) The component formation step is a step of forming a component for an electronic device on the polyimide film 18 of the laminate 16. More specifically, as shown in FIG. 4, a component 20 for an electronic device is formed on the polyimide film 18 (on the surface of the polyimide film 18 opposite to the adsorption layer 14), and a laminate 22 with a component for an electronic device is obtained. Furthermore, in order to improve the reliability of the electronic device, a barrier layer can be formed on the polyimide film 18. The material of the barrier layer is not particularly limited, and known materials can be used. As materials constituting the barrier layer, for example, silicon nitride and silicon oxide can be cited. In addition, the barrier layer may be one layer, two layers or more, or a combination of multiple materials. The film forming method is not particularly limited, and known methods may be cited. For example, methods such as plasma CVD (Chemical Vapor Deposition) and sputtering may be cited. First, the electronic device component 20 used in this step is described in detail, and then the order of the steps is described in detail.

(電子裝置用構件) 電子裝置用構件20係構成形成於積層體16之聚醯亞胺膜18上的電子裝置之至少一部分之構件。更具體而言,作為電子裝置用構件20,可例舉:顯示裝置用面板、太陽電池、薄膜二次電池、或表面形成有電路之半導體晶圓等電子零件、接收感測器面板等所使用之構件(例如,LTPS(Low Temperature Poly Silicon,低溫多晶矽)等顯示裝置用構件、太陽電池用構件、薄膜二次電池用構件、電子零件用電路、接收感測器用構件),例如可例舉:美國專利申請公開第2018/0178492號說明書之段落[0192]所記載之太陽電池用構件、相同說明書之段落[0193]所記載之薄膜二次電池用構件、相同說明書之段落[0194]所記載之電子零件用電路。 (Component for electronic device) The component for electronic device 20 is a component constituting at least a part of the electronic device formed on the polyimide film 18 of the laminate 16. More specifically, the electronic device component 20 may include: display device panels, solar cells, thin film secondary batteries, or electronic components such as semiconductor wafers with circuits formed on the surface, components used in receiving sensor panels, etc. (for example, LTPS (Low Temperature Poly Silicon) and other display device components, solar cell components, thin film secondary battery components, electronic component circuits, and receiving sensor components). For example, the solar cell component described in paragraph [0192] of the specification of U.S. Patent Application Publication No. 2018/0178492, the thin film secondary battery component described in paragraph [0193] of the same specification, and the electronic component circuit described in paragraph [0194] of the same specification.

(步驟之順序) 上述附電子裝置用構件之積層體22之製造方法無特別限制,根據電子裝置用構件之構成構件之種類,利用先前公知之方法,於積層體16之聚醯亞胺膜18上形成電子裝置用構件20。 電子裝置用構件20可為最終形成於聚醯亞胺膜18上之全部構件之一部分(以下,稱為「部分構件」),而不是最終形成於聚醯亞胺膜18上之構件之全部(以下,稱為「全部構件」)。亦可將自吸附層14剝離之附部分構件之基板於其後之步驟中設為附全部構件之基板(相當於下述電子裝置)。 亦可於自吸附層14剝離之附全部構件之基板之剝離面形成有其他電子裝置用構件。進而,亦可使2片附電子裝置用構件之積層體22之電子裝置用構件20彼此對向,將兩者貼合而組裝附全部構件之積層體,其後,自附全部構件之積層體剝離2片附吸附層之支持基材,製造電子裝置。 (Sequence of steps) The manufacturing method of the laminate 22 with electronic device components is not particularly limited. According to the type of components constituting the electronic device components, the electronic device component 20 is formed on the polyimide film 18 of the laminate 16 by a previously known method. The electronic device component 20 may be a part of all components ultimately formed on the polyimide film 18 (hereinafter referred to as "partial component"), rather than all components ultimately formed on the polyimide film 18 (hereinafter referred to as "all components"). It is also possible to set the substrate with the attached partial component peeled off from the adsorption layer 14 as the substrate with the attached full component in the subsequent step (equivalent to the electronic device described below). Other components for electronic devices may also be formed on the peeling surface of the substrate with all components peeled off from the adsorption layer 14. Furthermore, two electronic device components 20 with laminated bodies 22 with components for electronic devices may be placed facing each other, and the two laminated bodies with all components may be bonded together to assemble the laminated body with all components, and then the two supporting substrates with adsorption layers may be peeled off from the laminated body with all components to manufacture the electronic device.

例如,若以製造OLED之情形為例,則為了於積層體16之聚醯亞胺膜18之與吸附層14側為相反側之表面上形成有機EL構造體,而進行各種層形成或處理,如,形成透明電極;進而於形成有透明電極之面上蒸鍍電洞注入層、電洞傳輸層、發光層、電子傳輸層等;形成背面電極;使用密封板密封等。作為該等層形成或處理,具體而言,例如可例舉:成膜處理、蒸鍍處理、密封板之接著處理等。For example, in the case of manufacturing OLED, in order to form an organic EL structure on the surface of the polyimide film 18 of the laminate 16 opposite to the adsorption layer 14, various layer formation or processing is performed, such as forming a transparent electrode; further evaporating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, etc. on the surface formed with the transparent electrode; forming a back electrode; sealing with a sealing plate, etc. As such layer formation or processing, specifically, for example, film formation processing, evaporation processing, and sealing plate bonding processing can be cited.

(分離步驟) 分離步驟為如下步驟,即,如圖5所示,將吸附層14與聚醯亞胺膜18之界面作為剝離面,由上述構件形成步驟中所獲得之附電子裝置用構件之積層體22,分離成積層有電子裝置用構件20之聚醯亞胺膜18與附吸附層之支持基材26,獲得包含電子裝置用構件20及聚醯亞胺膜18之電子裝置24。 (Separation step) The separation step is the following step, that is, as shown in FIG5, the interface between the adsorption layer 14 and the polyimide film 18 is used as a peeling surface, and the laminated body 22 with the component for electronic device obtained in the above-mentioned component forming step is separated from the polyimide film 18 with the component for electronic device 20 and the supporting substrate 26 with the adsorption layer, thereby obtaining an electronic device 24 including the component for electronic device 20 and the polyimide film 18.

於所剝離之聚醯亞胺膜18上之電子裝置用構件20為形成所需之全部構成構件之一部分之情形時,亦可於分離後,於聚醯亞胺膜18上形成剩餘之構成構件。In the case where the electronic device component 20 on the peeled polyimide film 18 is a part of all the required components, the remaining components may be formed on the polyimide film 18 after separation.

將聚醯亞胺膜18及吸附層14剝離之方法無特別限制。例如,可將銳利之刃具狀物體插入至聚醯亞胺膜18與支持基材12之界面,形成剝離之起點,其後吹送水與壓縮空氣之混合流體而剝離。 較佳為,將附電子裝置用構件之積層體22以支持基材12為上側、電子裝置用構件20側為下側之方式設置於壓盤上,將電子裝置用構件20側真空吸附至壓盤上,於該狀態下首先使刃具狀物體侵入至聚醯亞胺膜18與支持基材12之界面。其後,藉由複數個真空吸盤吸附支持基材12側,自插入有刃具狀物體之位置附近依次使真空吸盤上升。如此,可容易地剝離附吸附層之支持基材26。 There is no particular limitation on the method of peeling the polyimide film 18 and the adsorption layer 14. For example, a sharp blade-like object may be inserted into the interface between the polyimide film 18 and the supporting substrate 12 to form a starting point for peeling, and then a mixed fluid of water and compressed air may be blown to peel. Preferably, the laminate 22 with the electronic device component is placed on a press plate with the supporting substrate 12 as the upper side and the electronic device component 20 as the lower side, and the electronic device component 20 is vacuum-adsorbed onto the press plate, and in this state, the blade-like object is firstly intruded into the interface between the polyimide film 18 and the supporting substrate 12. Afterwards, the support substrate 12 is sucked by a plurality of vacuum suction cups, and the vacuum suction cups are raised sequentially from the vicinity of the position where the blade-like object is inserted. In this way, the support substrate 26 with the adsorption layer attached can be easily peeled off.

當自附電子裝置用構件之積層體22分離電子裝置24時,藉由控制利用離子化器所進行之吹送或控制濕度,可進一步抑制吸附層14之碎片靜電吸附於電子裝置24。 上述電子裝置之製造方法適於製造例如美國專利申請公開第2018/0178492號說明書之段落[0210]所記載之顯示裝置,作為電子裝置24,例如可例舉相同說明書之段落[0211]所記載者。 When the electronic device 24 is separated from the laminate 22 of the component for the attached electronic device, the electrostatic adsorption of the fragments of the adsorption layer 14 to the electronic device 24 can be further suppressed by controlling the blowing performed by the ionizer or controlling the humidity. The above-mentioned method for manufacturing the electronic device is suitable for manufacturing a display device described in paragraph [0210] of the specification of U.S. Patent Application Publication No. 2018/0178492, and as the electronic device 24, for example, the one described in paragraph [0211] of the same specification can be cited.

又,於實施上述分離步驟前,亦可切斷積層體之未配置電子裝置用構件之區域而將其去除。 [實施例] Furthermore, before performing the above separation step, the region of the laminate where the components for electronic devices are not arranged may be cut off and removed. [Example]

以下,藉由實施例等,具體地說明本發明,但本發明並不受該等例之限制。Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited to these examples.

以下,作為支持基材,使用包含無鹼硼矽酸玻璃之玻璃板(線膨脹係數38×10 -7/℃、AGC股份有限公司製造 商品名「AN100」)。 以下,例1~例5為實施例,例6~例7為比較例。 Hereinafter, a glass plate made of alkali-free borosilicate glass (linear expansion coefficient 38×10 -7 /°C, trade name "AN100" manufactured by AGC Co., Ltd.) was used as a supporting substrate. Hereinafter, Examples 1 to 5 are Examples, and Examples 6 and 7 are Comparative Examples.

<外觀評價> 目測觀察按下述順序所獲得之依次具有玻璃板、矽酮樹脂層及聚醯亞胺膜的積層體中之聚醯亞胺膜,按照以下之基準進行評價。 A:聚醯亞胺膜未發生剝離。 B:雖然聚醯亞胺膜之一部分發生剝離,但為實用上無問題之範圍。 C:聚醯亞胺膜之大部分或整個面發生剝離,故為實用上有問題之範圍。 <Appearance Evaluation> The polyimide film in the laminate having the glass plate, the silicone resin layer and the polyimide film in the order obtained was visually observed and evaluated according to the following criteria. A: The polyimide film did not peel off. B: Although a part of the polyimide film peeled off, it was within the range of no practical problem. C: Most or the entire surface of the polyimide film peeled off, so it was within the range of practical problems.

<周緣區域之寬度評價> 按照以下之基準評價支持基材之周緣區域之寬度。 A:寬度為1 mm以上10 mm以下 B:寬度超過10 mm且30 mm以下 C:寬度超過30 mm且未達1 mm <Evaluation of the width of the peripheral area> Evaluate the width of the peripheral area of the support substrate according to the following criteria. A: Width is 1 mm or more and 10 mm or less B: Width is more than 10 mm and less than 30 mm C: Width is more than 30 mm and less than 1 mm

<異物嵌埋性> 目測觀察按下述順序所獲得之依次配置有玻璃板、矽酮樹脂層及PET膜之積層體,按照以下之基準進行評價。 A:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡為5個以下。 B:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡多於5個,且為10個以下。 C:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡多於10個。 <Foreign matter embedding property> Visually observe the laminated body in which the glass plate, silicone resin layer and PET film are arranged in the following order, and evaluate it according to the following criteria. A: The number of interface bubbles caused by foreign matter at the glass plate/silicone resin layer interface is 5 or less. B: The number of interface bubbles caused by foreign matter at the glass plate/silicone resin layer interface is more than 5 and less than 10. C: The number of interface bubbles caused by foreign matter at the glass plate/silicone resin layer interface is more than 10.

<例1> (硬化性矽酮之製備) 於1 L之燒瓶中加入三乙氧基甲基矽烷(179 g)、甲苯(300 g)、乙酸(5 g),將混合物於25℃下攪拌20分鐘後,進而加熱至60℃,反應12小時。將所獲得之反應粗液冷卻至25℃後,使用水(300 g),清洗反應粗液3次。於洗淨之反應粗液中加入氯化三甲基矽烷(70 g),將混合物於25℃下攪拌20分鐘後,進而加熱至50℃,反應12小時。將所獲得之反應粗液冷卻至25℃後,使用水(300 g),清洗反應粗液3次。自洗淨之反應粗液中減壓蒸餾去除甲苯,製成漿料狀態後,藉由真空乾燥機進行整夜乾燥,藉此獲得白色之有機聚矽氧烷化合物、即硬化性矽酮1。硬化性矽酮1之T單元之個數:M單元之個數=87:13(莫耳比)。再者,M單元意指(R) 3SiO 1/2所表示之1官能有機矽烷氧基單元。T單元意指RSiO 3/2(R表示氫原子或有機基)所表示之3官能有機矽烷氧基單元。 <Example 1> (Preparation of curable silicone) Triethoxymethylsilane (179 g), toluene (300 g), and acetic acid (5 g) were added to a 1 L flask, and the mixture was stirred at 25°C for 20 minutes, and then heated to 60°C and reacted for 12 hours. The obtained crude reaction solution was cooled to 25°C, and then washed with water (300 g) 3 times. Trimethylsilyl chloride (70 g) was added to the washed crude reaction solution, and the mixture was stirred at 25°C for 20 minutes, and then heated to 50°C and reacted for 12 hours. The obtained crude reaction solution was cooled to 25°C, and then washed with water (300 g) 3 times. Toluene was removed from the washed reaction crude liquid by reduced pressure distillation to obtain a slurry state, which was then dried overnight in a vacuum dryer to obtain a white organic polysiloxane compound, namely, curable silicone 1. The number of T units in curable silicone 1: the number of M units = 87:13 (molar ratio). In addition, the M unit refers to a monofunctional organic silaneoxy unit represented by (R) 3 SiO 1/2 . The T unit refers to a trifunctional organic silaneoxy unit represented by RSiO 3/2 (R represents a hydrogen atom or an organic group).

(硬化性組合物之製備) 將硬化性矽酮1與庚烷加以混合,進而添加有機鋯系化合物(辛酸鋯化合物)及有機鉍系化合物(2-乙基己酸鉍)。溶劑量以固形物成分濃度成為50質量%之方式進行調整。又,金屬化合物之添加量以金屬元素相對於樹脂100質量份為0.1質量份之方式進行調整。將所獲得之混合液使用孔徑0.45 μm之過濾器進行過濾,藉此獲得硬化性組合物。 將硬化性矽酮1與庚烷加以混合,進而添加有機鋯系化合物(辛酸鋯化合物)及有機鈰系化合物(2-乙基己酸鈰)。溶劑量以固形物成分濃度成為50質量%之方式進行調整。又,金屬化合物之添加量以金屬元素相對於樹脂100質量份為0.1質量份之方式進行調整。將所獲得之混合液使用孔徑0.45 μm之過濾器進行過濾,藉此獲得硬化性組合物。 (Preparation of curable composition) Curing silicone 1 was mixed with heptane, and an organic zirconium compound (zirconium octanoate compound) and an organic bismuth compound (bismuth 2-ethylhexanoate) were added. The amount of solvent was adjusted so that the solid content concentration was 50 mass %. In addition, the amount of metal compound added was adjusted so that the metal element was 0.1 mass part relative to 100 mass parts of the resin. The obtained mixed solution was filtered using a filter with a pore size of 0.45 μm to obtain a curable composition. Curing silicone 1 was mixed with heptane, and an organic zirconium compound (zirconium octanoate compound) and an organic bismuth compound (bismuth 2-ethylhexanoate) were added. The amount of solvent was adjusted so that the solid content concentration was 50 mass %. In addition, the amount of metal compound added was adjusted so that the metal element was 0.1 mass part relative to 100 mass parts of resin. The obtained mixed solution was filtered using a filter with a pore size of 0.45 μm to obtain a curable composition.

(積層基板之製作) 於聚對苯二甲酸乙二酯膜(PET膜)(東洋紡公司製造、COSMOSHINE A4100)之表面上塗佈所製備之硬化性組合物,使用加熱板於140℃下加熱10分鐘,藉此形成矽酮樹脂層。矽酮樹脂層之厚度為8 μm。 繼而,藉由水系玻璃洗淨劑(Parker Corporation股份有限公司製造之「PK-LCG213」)洗淨後,將經純水洗淨之200×200 mm、厚度0.5 mm之玻璃板「AN100」(支持基材)、與形成有矽酮樹脂層之PET膜進行貼合,製作依次配置有玻璃板、矽酮樹脂層、及PET膜之積層體。再者,於上述貼合時,以玻璃板之表面之周緣區域殘留未配置矽酮樹脂層之區域之方式進行貼合(參照圖2)。周緣區域之寬度W為5 mm。 其次,將所獲得之積層體配置於高壓釜內,於60℃、1 MPa之條件下加熱30分鐘。其後,剝離PET膜,對於包含玻璃板及矽酮樹脂層之積層基板,於250℃下實施30分鐘退火處理後,對矽酮樹脂層實施電暈處理。所獲得之矽酮樹脂層具有玻璃板側之第1主面、與第1主面為相反側之第2主面、及連接第1主面及第2主面之端面,上述端面係自第2主面起,越往第1主面越突出之傾斜面。上述傾斜面與第1主面所成之角度為3°。矽酮樹脂層之第1主面與第2主面之間之厚度為8 μm。 (Preparation of laminated substrate) The prepared curable composition was applied to the surface of a polyethylene terephthalate film (PET film) (manufactured by Toyobo Co., Ltd., COSMOSHINE A4100), and heated at 140°C for 10 minutes using a heating plate to form a silicone resin layer. The thickness of the silicone resin layer was 8 μm. Next, after cleaning with a water-based glass cleaner ("PK-LCG213" manufactured by Parker Corporation), a 200×200 mm, 0.5 mm thick glass plate "AN100" (support substrate) washed with pure water was bonded to a PET film formed with a silicone resin layer to produce a laminate having a glass plate, a silicone resin layer, and a PET film arranged in sequence. Furthermore, during the above bonding, bonding was performed in a manner that an area without a silicone resin layer was left on the peripheral area of the surface of the glass plate (see Figure 2). The width W of the peripheral area was 5 mm. Next, the obtained laminate was placed in an autoclave and heated for 30 minutes at 60°C and 1 MPa. After that, the PET film was peeled off, and the laminated substrate including the glass plate and the silicone resin layer was annealed at 250°C for 30 minutes, and then the silicone resin layer was subjected to a corona treatment. The silicone resin layer obtained has a first main surface on the glass plate side, a second main surface on the opposite side of the first main surface, and an end surface connecting the first main surface and the second main surface, and the end surface is an inclined surface that protrudes from the second main surface to the first main surface. The angle between the inclined surface and the first main surface is 3°. The thickness between the first main surface and the second main surface of the silicone resin layer is 8 μm.

(積層體之製作) 於上述所獲得之積層基板之矽酮樹脂層側之表面塗佈聚醯亞胺清漆(宇部興產公司製造、UPIA-ST-1003),於60℃下加熱30分鐘後,進而於120℃下加熱30分鐘,其後於450℃下加熱10分鐘,獲得依次具有玻璃板、矽酮樹脂層及聚醯亞胺膜(厚度:7 μm)之積層體。聚醯亞胺膜配置於玻璃板之周緣區域上及矽酮樹脂層上(參照圖3)。 (Production of laminated body) Polyimide varnish (UPIA-ST-1003 manufactured by Ube Industries) was applied to the surface of the silicone resin layer side of the laminated substrate obtained above, and then heated at 60°C for 30 minutes, then at 120°C for 30 minutes, and then at 450°C for 10 minutes to obtain a laminated body having a glass plate, a silicone resin layer, and a polyimide film (thickness: 7 μm) in sequence. The polyimide film was arranged on the peripheral area of the glass plate and on the silicone resin layer (see Figure 3).

<例2~例14> 將矽酮樹脂層之第1主面與第2主面之間之厚度、周緣區域之寬度及角度如下述表1及表2所示進行調整,除此以外,按照與例1相同之順序獲得積層體。表1係使用包含鉍之硬化性組合物之情形,表2係使用包含鈰之硬化性組合物之情形。 再者,關於例6及7、及13及14,於玻璃板之整個面塗佈硬化性組合物,將塗膜於250℃下加熱30分鐘使之硬化,於玻璃板之整個面上製作矽酮樹脂層後,切斷所獲得之附矽酮樹脂層之玻璃板之周緣部,獲得具有玻璃板及矽酮樹脂層且具有平滑之側面之積層體(以下,亦稱為「積層體C」),其後使用積層體C實施上述內容(積層體之製作)。即,關於例6及7、及13及14所使用之積層體C,具有矽酮樹脂層之玻璃板側之主面之面積和與玻璃板側為相反側之主面之面積相同、且θ相當於90°之矽酮樹脂層。 <Example 2 to Example 14> The thickness between the first main surface and the second main surface of the silicone resin layer, the width of the peripheral area, and the angle were adjusted as shown in Tables 1 and 2 below, and the laminate was obtained in the same order as in Example 1. Table 1 is the case of using a curable composition containing bismuth, and Table 2 is the case of using a curable composition containing niobium. Furthermore, regarding Examples 6 and 7, and 13 and 14, a curable composition was coated on the entire surface of a glass plate, the coating was heated at 250°C for 30 minutes to cure, a silicone resin layer was formed on the entire surface of the glass plate, and then the peripheral portion of the glass plate with the silicone resin layer was cut off to obtain a laminate having a glass plate and a silicone resin layer and having a smooth side surface (hereinafter also referred to as "laminate C"), and then the above-mentioned content (laminate formation) was implemented using laminate C. That is, regarding the laminate C used in Examples 6 and 7, and 13 and 14, the silicone resin layer has the same area of the main surface on the glass plate side and the main surface on the side opposite to the glass plate side, and the angle θ is equal to 90°.

表1及表2中,「吸附層厚度(μm)」欄表示矽酮樹脂層之第1主面與第2主面之間之厚度。 表1及表2中,「周緣區域寬度(mm)」欄表示周緣區域之寬度(圖2之W)。 表1及表2中,「角度(°)」欄表示矽酮樹脂層之第1主面與傾斜面所成之角度。角度之測定方法如上所述。 In Tables 1 and 2, the "Adsorption layer thickness (μm)" column indicates the thickness between the first main surface and the second main surface of the silicone resin layer. In Tables 1 and 2, the "Peripheral area width (mm)" column indicates the width of the peripheral area (W in Figure 2). In Tables 1 and 2, the "Angle (°)" column indicates the angle between the first main surface of the silicone resin layer and the inclined surface. The angle measurement method is as described above.

[表1] 吸附層厚度(μm) 周緣區域寬度(mm) 角度(°) 評價 外觀評價 寬度評價 異物嵌埋性 1 8 5 3 A A A 2 8 30 3 A B A 3 15 5 3 B A A 4 4 1 3 A A B 5 8 50 3 A C A 6 8 0 90 C C A 7 15 0 90 C C A [Table 1] example Adsorption layer thickness (μm) Width of peripheral area (mm) Angle (°) Reviews Appearance evaluation Width evaluation Foreign body embedment 1 8 5 3 A A A 2 8 30 3 A B A 3 15 5 3 B A A 4 4 1 3 A A B 5 8 50 3 A C A 6 8 0 90 C C A 7 15 0 90 C C A

[表2] 吸附層厚度(μm) 周緣區域寬度(mm) 角度 (°) 評價 外觀評價 寬度評價 異物嵌埋性 8 8 5 3 A A A 9 8 30 3 A B A 10 15 5 3 B A A 11 4 1 3 A A B 12 8 50 3 A C A 13 8 0 90 C C A 14 15 0 90 C C A [Table 2] example Adsorption layer thickness (μm) Width of peripheral area (mm) Angle (°) Reviews Appearance evaluation Width evaluation Foreign body embedment 8 8 5 3 A A A 9 8 30 3 A B A 10 15 5 3 B A A 11 4 1 3 A A B 12 8 50 3 A C A 13 8 0 90 C C A 14 15 0 90 C C A

如表1及表2所示,本發明之積層基板顯示出所需之效果。 尤其是於使用包含鉍之硬化性組合物之情形時,根據例1~3及5與例4之比較,確認到於吸附層之厚度為6 μm以上之情形時,異物嵌埋性更加優異。 又,根據例1與3之比較,確認到於吸附層之厚度為12 μm以下之情形時,外觀特性更加優異。 於使用包含鈰之硬化性組合物之情形時亦相同,根據例8~10及12與例11之比較,確認到於吸附層之厚度為6 μm以上之情形時,異物嵌埋性更加優異。 又,根據例8與10之比較,確認到於吸附層之厚度為12 μm以下之情形時,外觀特性更加優異。 As shown in Tables 1 and 2, the laminated substrate of the present invention exhibits the desired effect. In particular, when a curable composition containing bismuth is used, it is confirmed that when the thickness of the adsorption layer is 6 μm or more, the foreign matter embedding property is more excellent according to the comparison between Examples 1 to 3 and 5 and Example 4. In addition, it is confirmed that when the thickness of the adsorption layer is 12 μm or less, the appearance characteristics are more excellent according to the comparison between Examples 1 and 3. The same is true when a curable composition containing bismuth is used. According to the comparison between Examples 8 to 10 and 12 and Example 11, it is confirmed that when the thickness of the adsorption layer is 6 μm or more, the foreign matter embedding property is more excellent. Furthermore, based on the comparison between Examples 8 and 10, it was confirmed that when the thickness of the adsorption layer is less than 12 μm, the appearance characteristics are more excellent.

<有機EL顯示裝置(相當於電子裝置)之製造> 使用例1~5、8~12所獲得之積層體,按照以下之順序製造有機EL顯示裝置。 首先,於積層基板之聚醯亞胺膜之與玻璃板側為相反側之表面上,藉由電漿CVD法按照氮化矽、氧化矽、非晶矽之順序成膜。其次,藉由離子摻雜裝置,將低濃度之硼注入至非晶矽層,進行加熱處理並進行脫氫處理。其次,藉由雷射退火裝置進行非晶矽層之結晶化處理。其次,藉由使用光微影法之蝕刻及離子摻雜裝置,將低濃度之磷注入至非晶矽層,形成N型及P型之TFT(Thin-Film Transistor,薄膜電晶體)區域。 其次,於聚醯亞胺膜之與玻璃板側相反一側,藉由電漿CVD法使氧化矽膜成膜而形成閘極絕緣膜,其後利用濺鍍法使鉬成膜,藉由使用光微影法之蝕刻而形成閘極電極。其次,藉由光微影法及離子摻雜裝置,將高濃度之硼及磷注入至N型、P型各自所需之區域,形成源極區域及汲極區域。 其次,於聚醯亞胺膜之與玻璃板側相反一側,利用電漿CVD法使氧化矽成膜,藉此形成層間絕緣膜,藉由濺鍍法使鋁成膜並藉由使用光微影法所進行之蝕刻而形成TFT電極。其次,於氫氣氛圍下,進行加熱處理並進行加氫處理後,藉由利用電漿CVD法所進行之氮化矽成膜而形成鈍化層。 其次,於聚醯亞胺膜之與玻璃板側相反一側塗佈紫外線硬化性樹脂,利用光微影法形成平坦化層及接觸孔。其次,藉由濺鍍法使氧化銦錫成膜,藉由使用光微影法所進行之蝕刻而形成像素電極。繼而,利用蒸鍍法,於聚醯亞胺膜之與玻璃板側相反一側依次成膜有:作為電洞注入層之4,4',4''-三(3-甲基苯基苯基胺基)三苯胺、作為電洞傳輸層之雙[(N-萘基)-N-苯基]聯苯胺、作為發光層之將2,6-雙[4-[N-(4-甲氧基苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二甲腈(BSN-BCN)以40體積%混合於8-羥基喹啉鋁錯合物(Alq 3)中所得者、作為電子傳輸層之Alq 3。其次,利用濺鍍法使鋁成膜,藉由使用光微影法所進行之蝕刻而形成對向電極。 其次,於聚醯亞胺膜之與玻璃板側相反一側,經由紫外線硬化型接著層貼合另一片玻璃板進行密封。按照上述順序,於聚醯亞胺膜上形成有機EL構造體。聚醯亞胺膜上具有有機EL構造體之構造物(以下,稱為面板A)為附電子裝置用構件之積層體。 繼而,使面板A之密封體側真空吸附至壓盤後,將厚度0.1 mm之不鏽鋼製刃具插入至面板A之角隅部之聚醯亞胺膜與玻璃板之界面,於聚醯亞胺膜與玻璃板之界面形成剝離之起點。然後,藉由真空吸盤吸附面板A之支持基材表面後,使吸盤上升。此處,一面自離子化器(基恩士公司製造)向該界面吹送去靜電性流體,一面插入刃具。其次,自離子化器繼續向所形成之空隙吹送去靜電性流體,且,一面向剝離前線注水一面提拉真空吸盤。其結果,壓盤上僅殘留形成有有機EL構造體之聚醯亞胺膜,成功將附矽酮樹脂層之支持基材剝離。 繼而,使用雷射裁刀或劃線-斷裂法切斷所分離之聚醯亞胺膜,分割成複數個單元後,將形成有有機EL構造體之聚醯亞胺膜與對向基板進行組裝,實施模組形成步驟,製作有機EL顯示裝置。 <Manufacturing of an organic EL display device (equivalent to an electronic device)> Using the multilayer bodies obtained in Examples 1 to 5 and 8 to 12, an organic EL display device is manufactured in the following order. First, on the surface of the polyimide film of the multilayer substrate opposite to the glass plate side, silicon nitride, silicon oxide, and amorphous silicon are formed in this order by plasma CVD. Next, a low concentration of boron is injected into the amorphous silicon layer by an ion doping device, and a heat treatment and a dehydrogenation treatment are performed. Next, a crystallization treatment of the amorphous silicon layer is performed by a laser annealing device. Next, by using photolithography etching and ion doping equipment, low-concentration phosphorus is injected into the amorphous silicon layer to form N-type and P-type TFT (Thin-Film Transistor) regions. Next, on the side of the polyimide film opposite to the glass plate, a silicon oxide film is formed by plasma CVD to form a gate insulating film, and then molybdenum is formed by sputtering, and a gate electrode is formed by etching using photolithography. Next, by using photolithography and ion doping equipment, high-concentration boron and phosphorus are injected into the required areas of the N-type and P-type to form the source region and the drain region. Next, a silicon oxide film is formed on the side of the polyimide film opposite to the glass plate by plasma CVD to form an interlayer insulating film, and an aluminum film is formed by sputtering and etching by photolithography to form TFT electrodes. Next, a silicon nitride film is formed by plasma CVD after heat treatment and hydrogenation in a hydrogen atmosphere to form a passivation layer. Next, an ultraviolet curable resin is applied on the side of the polyimide film opposite to the glass plate, and a planarization layer and contact holes are formed by photolithography. Next, indium tin oxide was formed by sputtering, and pixel electrodes were formed by etching using photolithography. Then, on the side of the polyimide film opposite to the glass plate, films were formed in order by evaporation: 4,4',4''-tris(3-methylphenylphenylamino)triphenylamine as a hole injection layer, bis[(N-naphthyl)-N-phenyl]benzidine as a hole transport layer, 2,6-bis[4-[N-(4-methoxyphenyl)-N-phenyl]aminostyryl]naphthalene-1,5-dicarbonitrile (BSN-BCN) mixed with 8-hydroxyquinoline aluminum complex (Alq 3 ) at 40 volume % as a light emitting layer, and Alq 3 as an electron transport layer. Next, aluminum is formed into a film by sputtering, and a counter electrode is formed by etching using photolithography. Next, another glass plate is bonded to the side of the polyimide film opposite to the glass plate via a UV-curing adhesive layer for sealing. According to the above sequence, an organic EL structure is formed on the polyimide film. The structure having an organic EL structure on the polyimide film (hereinafter referred to as panel A) is a laminated body with components for electronic devices. Next, after the sealed body side of panel A is vacuum-adsorbed onto a press plate, a stainless steel blade with a thickness of 0.1 mm is inserted into the interface between the polyimide film and the glass plate at the corner of panel A to form a starting point for peeling at the interface between the polyimide film and the glass plate. Then, after the surface of the support substrate of panel A is sucked by the vacuum suction cup, the suction cup is raised. Here, a destaticizing fluid is blown to the interface from the ionizer (manufactured by Keyence Corporation) while a cutting tool is inserted. Next, a destaticizing fluid is blown to the gap formed from the ionizer, and water is injected to the peeling front while the vacuum suction cup is lifted. As a result, only the polyimide film with the organic EL structure formed remains on the pressure plate, and the support substrate with the silicone resin layer is successfully peeled off. Next, the separated polyimide film is cut by a laser cutter or a scribing-breaking method to be divided into a plurality of units, and then the polyimide film having an organic EL structure is assembled with a counter substrate to perform a module forming step and manufacture an organic EL display device.

又,參照特定之實施方式,詳細地說明本發明,但業者清楚,可於不脫離本發明之精神及範圍之情況下進行各種變更或修正。 本申請係基於2020年1月31日提出申請之日本專利申請2020-015418、2020年4月17日提出申請之日本專利申請2020-074048、2020年6月8日提出申請之日本專利申請2020-099427者,其內容係作為參照而併入本說明書中。 In addition, the present invention is described in detail with reference to specific embodiments, but it is clear that various changes or modifications can be made without departing from the spirit and scope of the present invention. This application is based on Japanese Patent Application No. 2020-015418 filed on January 31, 2020, Japanese Patent Application No. 2020-074048 filed on April 17, 2020, and Japanese Patent Application No. 2020-099427 filed on June 8, 2020, and the contents thereof are incorporated into this specification as a reference.

10:積層基板 12:支持基材 12a:周緣區域 14:矽酮樹脂層 14a:第1主面 14b:第2主面 14c:端面 16:積層體 18:聚醯亞胺膜 20:電子裝置用構件 22:附電子裝置用構件之積層體 24:電子裝置 26:附吸附層之支持基材 AB:線段 AC:線段 W:寬度 θ:角度 10: Laminated substrate 12: Support substrate 12a: Peripheral area 14: Silicone resin layer 14a: First main surface 14b: Second main surface 14c: End surface 16: Laminated body 18: Polyimide film 20: Component for electronic device 22: Laminated body with component for electronic device 24: Electronic device 26: Support substrate with adsorption layer AB: Line segment AC: Line segment W: Width θ: Angle

圖1係模式性地表示本發明之積層基板之一實施方式之剖視圖。 圖2係圖1所示之積層基板之俯視圖。 圖3係模式性地表示本發明之積層體之一實施方式之剖視圖。 圖4係用於說明構件形成步驟之剖視圖。 圖5係用於說明分離步驟之剖視圖。 FIG. 1 is a cross-sectional view schematically showing an implementation of the laminate substrate of the present invention. FIG. 2 is a top view of the laminate substrate shown in FIG. 1. FIG. 3 is a cross-sectional view schematically showing an implementation of the laminate body of the present invention. FIG. 4 is a cross-sectional view for illustrating the component forming step. FIG. 5 is a cross-sectional view for illustrating the separation step.

10:積層基板 12:支持基材 12a:周緣區域 14:矽酮樹脂層 14a:第1主面 14b:第2主面 14c:端面 AB:線段 AC:線段 θ:角度 10: Laminated substrate 12: Support substrate 12a: Peripheral area 14: Silicone resin layer 14a: First main surface 14b: Second main surface 14c: End surface AB: Line segment AC: Line segment θ: Angle

Claims (13)

一種積層基板,其係具有玻璃製之支持基材、及配置於上述支持基材上之吸附層者, 於上述支持基材之上述吸附層側之表面具有未配置上述吸附層之周緣區域, 上述吸附層具有上述支持基材側之第1主面、與上述第1主面為相反側之第2主面、及連接上述第1主面與上述第2主面之端面, 上述端面為自上述第2主面起,越往上述第1主面越突出之傾斜面,且 上述傾斜面與上述第1主面所成之角度為5°以下, 上述吸附層為由縮合反應型矽酮所形成之矽酮樹脂層。 A laminate substrate having a glass support substrate and an adsorption layer disposed on the support substrate, The surface of the support substrate on the adsorption layer side has a peripheral area where the adsorption layer is not disposed, The adsorption layer has a first main surface on the support substrate side, a second main surface on the opposite side to the first main surface, and an end surface connecting the first main surface and the second main surface, The end surface is an inclined surface that protrudes from the second main surface toward the first main surface, and The angle between the inclined surface and the first main surface is less than 5°, The adsorption layer is a silicone resin layer formed by condensation reaction type silicone. 如請求項1之積層基板,其中上述吸附層具有羥基。The laminated substrate of claim 1, wherein the adsorption layer has a hydroxyl group. 如請求項1之積層基板,其中上述吸附層包含金屬化合物。The laminate substrate of claim 1, wherein the adsorption layer comprises a metal compound. 如請求項3之積層基板,其中上述金屬化合物包含選自3d過渡金屬、4d過渡金屬及鑭系元素系金屬之至少1種之金屬元素。The multilayer substrate of claim 3, wherein the metal compound comprises at least one metal element selected from 3d transition metals, 4d transition metals and chrysogenum metals. 如請求項1或3之積層基板,其中上述吸附層之上述第1主面與上述第2主面之間之厚度為超過1 μm且12 μm以下。A laminate substrate as claimed in claim 1 or 3, wherein the thickness of the adsorption layer between the first main surface and the second main surface is greater than 1 μm and less than 12 μm. 如請求項5之積層基板,其中上述吸附層之上述第1主面與上述第2主面之間之厚度為超過1 μm且8 μm以下。A laminate substrate as claimed in claim 5, wherein the thickness between the first main surface and the second main surface of the adsorption layer is greater than 1 μm and less than 8 μm. 如請求項6之積層基板,其中上述吸附層之上述第1主面與上述第2主面之間之厚度為超過1 μm且4 μm以下。A laminate substrate as claimed in claim 6, wherein the thickness between the first main surface and the second main surface of the adsorption layer is greater than 1 μm and less than 4 μm. 如請求項1或3之積層基板,其中上述周緣區域之寬度為1~30 mm。The laminate substrate of claim 1 or 3, wherein the width of the peripheral area is 1 to 30 mm. 如請求項1或3之積層基板,其進而具備配置於上述吸附層上之保護膜。The laminated substrate of claim 1 or 3 further comprises a protective film disposed on the adsorption layer. 一種積層體之製造方法,其於如請求項1或3之積層基板之上述吸附層側塗佈包含聚醯亞胺或其前驅物及溶劑之聚醯亞胺清漆,於上述周緣區域上及上述吸附層上形成聚醯亞胺膜,從而形成具有上述支持基材、上述吸附層、及上述聚醯亞胺膜之積層體。A method for manufacturing a laminated body, wherein a polyimide varnish comprising polyimide or its precursor and a solvent is coated on the above-mentioned adsorption layer side of the laminated substrate as claimed in claim 1 or 3, and a polyimide film is formed on the above-mentioned peripheral area and on the above-mentioned adsorption layer, thereby forming a laminated body having the above-mentioned supporting substrate, the above-mentioned adsorption layer, and the above-mentioned polyimide film. 一種積層體,其具有:如請求項1或3之積層基板;及 聚醯亞胺膜,其配置於上述積層基板中之上述周緣區域上及上述吸附層上。 A laminated body comprising: a laminated substrate as claimed in claim 1 or 3; and a polyimide film disposed on the peripheral region of the laminated substrate and on the adsorption layer. 一種附電子裝置用構件之積層體,其具有:如請求項1或3之積層基板;及 電子裝置用構件,其配置於上述積層基板中之上述吸附層上。 A laminated body with a component for an electronic device, comprising: a laminated substrate as claimed in claim 1 or 3; and a component for an electronic device, which is arranged on the above-mentioned adsorption layer in the above-mentioned laminated substrate. 一種電子裝置之製造方法,其包括: 構件形成步驟,其於如請求項11之積層體之上述聚醯亞胺膜上形成電子裝置用構件,而獲得附電子裝置用構件之積層體;及 分離步驟,其自上述附電子裝置用構件之積層體獲得具有上述聚醯亞胺膜及上述電子裝置用構件之電子裝置。 A method for manufacturing an electronic device, comprising: a component forming step, in which a component for an electronic device is formed on the polyimide film of the laminate as claimed in claim 11, thereby obtaining a laminate with a component for an electronic device attached; and a separation step, in which an electronic device having the polyimide film and the component for an electronic device is obtained from the laminate with the component for an electronic device attached.
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