TWI820384B - Laminated substrate, manufacturing method of laminated body, laminated body, laminated body with components for electronic device, manufacturing method of electronic device - Google Patents
Laminated substrate, manufacturing method of laminated body, laminated body, laminated body with components for electronic device, manufacturing method of electronic device Download PDFInfo
- Publication number
- TWI820384B TWI820384B TW110103463A TW110103463A TWI820384B TW I820384 B TWI820384 B TW I820384B TW 110103463 A TW110103463 A TW 110103463A TW 110103463 A TW110103463 A TW 110103463A TW I820384 B TWI820384 B TW I820384B
- Authority
- TW
- Taiwan
- Prior art keywords
- adsorption layer
- main surface
- electronic device
- polyimide film
- laminated body
- Prior art date
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- WNDSQRGJJHSKCQ-UHFFFAOYSA-N naphthalene-1,5-dicarbonitrile Chemical compound C1=CC=C2C(C#N)=CC=CC2=C1C#N WNDSQRGJJHSKCQ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- HVNWRBWNOPYOER-UHFFFAOYSA-N pentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C(C)C(C(O)=O)C(C(O)=O)CC(O)=O HVNWRBWNOPYOER-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229960002622 triacetin Drugs 0.000 description 1
- NKLYMYLJOXIVFB-UHFFFAOYSA-N triethoxymethylsilane Chemical compound CCOC([SiH3])(OCC)OCC NKLYMYLJOXIVFB-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本發明係關於一種積層基板,其具有玻璃製之支持基材、及配置於支持基材上之吸附層,於支持基材之吸附層側之表面具有未配置吸附層之周緣區域,吸附層具有支持基材側之第1主面、與第1主面為相反側之第2主面、及連接第1主面與第2主面之端面,端面為自第2主面起,越往第1主面越突出之傾斜面,且傾斜面與第1主面所成之角度未達10°。關於本發明之積層基板,當於其表面上塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,所形成之聚醯亞胺膜不易發生剝離。The present invention relates to a laminated substrate, which has a glass support base material and an adsorption layer arranged on the support base material. The surface of the support base material on the adsorption layer side has a peripheral area where no adsorption layer is arranged, and the adsorption layer has The first main surface on the supporting base material side, the second main surface on the opposite side to the first main surface, and the end surface connecting the first main surface and the second main surface. The end surfaces are from the second main surface to the 1. An inclined surface with a protruding main surface, and the angle between the inclined surface and the first main surface does not reach 10°. Regarding the laminated substrate of the present invention, when a polyimide varnish is coated on the surface to form a polyimide film, the formed polyimide film is less likely to peel off.
Description
本發明係關於一種積層基板、積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。 The present invention relates to a laminated substrate, a method of manufacturing a laminated body, a laminated body, a laminated body with components for electronic devices, and a method of manufacturing an electronic device.
太陽電池(PV)、液晶面板(LCD)、有機EL(Electroluminescence,電致發光)面板(OLED)、及感知電磁波、X射線、紫外線、可見光線、紅外線等之接收感測器面板等電子裝置正變得更薄、更輕。伴隨於此,電子裝置所使用之聚醯亞胺樹脂基板等基板亦變得更薄。若因變薄而使基板之強度不足,則存在如下情形,即,基板之操作性降低,於在基板上形成電子裝置用構件之步驟(構件形成步驟)等中會產生問題。 Electronic devices such as solar cells (PV), liquid crystal panels (LCD), organic EL (Electroluminescence, OLED) panels, and receiving sensor panels that sense electromagnetic waves, X-rays, ultraviolet rays, visible rays, infrared rays, etc. Becoming thinner and lighter. Along with this, substrates such as polyimide resin substrates used in electronic devices have also become thinner. If the strength of the substrate is insufficient due to thinning, the handleability of the substrate may be reduced, which may cause problems in the step of forming components for electronic devices on the substrate (the component forming step).
因此,最近,為了使基板之操作性變得良好,提出一種使用積層體之技術,上述積層體係於支持基材上配置有聚醯亞胺樹脂基板(專利文獻1)。更具體而言,於專利文獻1中揭示有,可於熱硬化性樹脂組合物硬化體層上塗佈聚醯亞胺清漆,形成樹脂清漆硬化膜(相當於聚醯亞胺膜),並於樹脂清漆硬化膜上配置精密元件。 Therefore, recently, in order to improve the handleability of the substrate, a technology using a laminate system in which a polyimide resin substrate is arranged on a supporting base material has been proposed (Patent Document 1). More specifically, Patent Document 1 discloses that a polyimide varnish can be coated on a thermosetting resin composition cured body layer to form a resin varnish cured film (equivalent to a polyimide film), and the resin can be Precision components are placed on the varnish hardened film.
[專利文獻1]日本專利特開2018-193544號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-193544
另一方面,本發明人實施專利文獻1所記載之塗佈聚醯亞胺清漆製作聚醯亞胺膜之製程,結果發現,當塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,聚醯亞胺膜容易發生剝離。並且發現,尤其容易於聚醯亞胺膜之端部發生剝離。 On the other hand, the present inventor implemented the process of coating polyimide varnish to form a polyimide film described in Patent Document 1, and found that when the polyimide varnish is coated to form a polyimide film, Polyimide films are prone to peeling. Furthermore, it was found that peeling occurs particularly easily at the ends of the polyimide film.
本發明之課題在於提供一種積層基板,當於其表面上塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,所形成之聚醯亞胺膜不易發生剝離。 An object of the present invention is to provide a laminated substrate. When a polyimide varnish is coated on the surface to form a polyimide film, the formed polyimide film is less likely to peel off.
本發明之課題亦在於提供一種積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。 Another object of the present invention is to provide a method for manufacturing a laminated body, a laminated body, a laminated body with components for electronic devices, and a method for manufacturing an electronic device.
本發明人等進行銳意研究,結果發現,可藉由以下之構成解決上述課題。 The present inventors conducted intensive research and found that the above problems can be solved by the following configuration.
(1)一種積層基板,其具有玻璃製之支持基材、及配置於支持基材上之吸附層,於支持基材之吸附層側之表面具有未配置吸附層之周緣區域, 吸附層具有支持基材側之第1主面、與第1主面為相反側之第2主面、及連接第1主面與第2主面之端面,端面為自第2主面起,越往第1主面越突出之傾斜面,且傾斜面與第1主面所成之角度未達10°。 (1) A laminated substrate having a glass support base material and an adsorption layer arranged on the support base material, and having a peripheral area where no adsorption layer is placed on the surface of the adsorption layer side of the support base material, The adsorption layer has a first main surface supporting the substrate, a second main surface opposite to the first main surface, and an end surface connecting the first main surface and the second main surface. The end surface is from the second main surface. An inclined surface that protrudes more toward the first main surface, and the angle between the inclined surface and the first main surface does not reach 10°.
(2)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為50μm以下。 (2) The laminated substrate according to (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is 50 μm or less.
(3)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為12μm以下。 (3) The laminated substrate according to (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is 12 μm or less.
(4)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為6μm以上。 (4) The laminated substrate according to (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is 6 μm or more.
(5)如(1)所記載之積層基板,其中傾斜面與第1主面所成之角度為5°以下。 (5) The laminated substrate according to (1), wherein the angle formed by the inclined surface and the first main surface is 5° or less.
(6)如(1)至(5)中任一項所記載之積層基板,其中周緣區域之寬度為1~30mm。 (6) The laminated substrate according to any one of (1) to (5), wherein the width of the peripheral region is 1 to 30 mm.
(7)如(1)至(6)中任一項所記載之積層基板,其中吸附層為矽酮樹脂層。 (7) The laminated substrate according to any one of (1) to (6), wherein the adsorption layer is a silicone resin layer.
(8)如(1)至(7)中任一項所記載之積層基板,其進而具備配置於吸附層上之保護膜。 (8) The laminated substrate according to any one of (1) to (7), further comprising a protective film disposed on the adsorption layer.
(9)一種如(1)至(8)中任一項所記載之積層基板之製造方法,其具有:支持基材與轉印膜之貼合步驟,該步驟係於支持基材上貼合具有成為吸附層之前驅物膜之轉印膜,此時將支持基材與轉印膜配置為使得支持基材上具有未配置前驅物膜之周緣區域;及前驅物膜加熱步驟,其用於自前驅物膜獲得吸附層。 (9) A method for manufacturing a laminated substrate as described in any one of (1) to (8), which includes: a step of laminating a support base material and a transfer film, which step is to laminate the support base material A transfer film having a precursor film that becomes an adsorption layer. In this case, the support base material and the transfer film are configured so that the support base material has a peripheral area where the precursor film is not disposed; and a precursor film heating step for The adsorbed layer is obtained from the precursor film.
(10)一種積層體之製造方法,其於如(1)至(7)中任一項所記載之積層基板之吸附層側塗佈包含聚醯亞胺或其前驅物及溶劑之聚醯亞胺清漆,於周緣區域上及吸附層上形成聚醯亞胺膜,從而形成依次具有支持基材、吸附層、及聚醯亞胺膜之積層體。 (10) A method for manufacturing a laminated body, which includes coating a polyimide containing polyimide or a precursor thereof and a solvent on the adsorption layer side of the laminated substrate as described in any one of (1) to (7). The amine varnish forms a polyimide film on the peripheral area and the adsorption layer, thereby forming a laminate having a support substrate, an adsorption layer, and a polyimide film in sequence.
(11)一種積層體,其具有:如(1)至(7)中任一項所記載之積層基板;及聚醯亞胺膜,其配置於積層基板中之周緣區域上及吸附層上。 (11) A laminated body having: the laminated substrate according to any one of (1) to (7); and a polyimide film disposed on the peripheral region of the laminated substrate and on the adsorption layer.
(12)一種附電子裝置用構件之積層體,其具有:如(11)所記載之積層體;及電子裝置用構件,其配置於積層體中之聚醯亞胺膜上。 (12) A laminated body with a member for an electronic device, comprising: the laminated body according to (11); and a member for an electronic device arranged on a polyimide film in the laminated body.
(13)一種電子裝置之製造方法,其包括:構件形成步驟,其於如(11)所記載之積層體之聚醯亞胺膜上形成電子裝置用構件,獲得附電子裝置用構件之積層體;及分離步驟,其自附電子裝置用構件之積層體獲得具有聚醯亞胺膜及電子裝置用構件之電子裝置。 (13) A method for manufacturing an electronic device, which includes a member forming step of forming a member for an electronic device on the polyimide film of the laminated body according to (11) to obtain a laminated body with the member for an electronic device. ; and a separation step of obtaining an electronic device having a polyimide film and a member for an electronic device from the laminate with the component for the electronic device attached thereto.
根據本發明,可提供一種積層基板,當於其表面上塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,所形成之聚醯亞胺膜不易發生剝離。 According to the present invention, it is possible to provide a laminated substrate in which when a polyimide varnish is coated on the surface to form a polyimide film, the formed polyimide film is less likely to peel off.
根據本發明,可提供一種積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。 According to the present invention, a method for manufacturing a laminated body, a laminated body, a laminated body with a member for an electronic device, and a method for manufacturing an electronic device can be provided.
10:積層基板 10:Laminated substrate
12:支持基材 12: Support base material
12a:周緣區域 12a: Peripheral area
14:矽酮樹脂層 14: Silicone resin layer
14a:第1主面 14a: 1st main side
14b:第2主面 14b: 2nd main side
14c:端面 14c: End face
16:積層體 16: Laminated body
18:聚醯亞胺膜 18:Polyimide membrane
20:電子裝置用構件 20: Components for electronic devices
22:附電子裝置用構件之積層體 22:Laminated body with components for electronic devices
24:電子裝置 24:Electronic devices
26:附吸附層之支持基材 26: Support substrate with adsorption layer
AB:線段 AB: line segment
AC:線段 AC: line segment
W:寬度 W: Width
θ:角度 θ: angle
圖1係模式性地表示本發明之積層基板之一實施方式之剖視圖。 FIG. 1 is a cross-sectional view schematically showing one embodiment of the multilayer substrate of the present invention.
圖2係圖1所示之積層基板之俯視圖。 FIG. 2 is a top view of the laminated substrate shown in FIG. 1 .
圖3係模式性地表示本發明之積層體之一實施方式之剖視圖。 FIG. 3 is a cross-sectional view schematically showing one embodiment of the laminated body of the present invention.
圖4係用於說明構件形成步驟之剖視圖。 Fig. 4 is a cross-sectional view for explaining the steps of forming the member.
圖5係用於說明分離步驟之剖視圖。 Figure 5 is a cross-sectional view for explaining the separation step.
以下,參照圖式對本發明之實施方式進行說明。但,以下之實施方式僅為用於說明本發明而例示者,本發明並不限制於以下所示之實施方式。再者,可於不脫離本發明之範圍之情況下,於以下之實施方式中進行各種變化及置換。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the following embodiments are merely examples for explaining the present invention, and the present invention is not limited to the embodiments shown below. In addition, various changes and substitutions can be made in the following embodiments without departing from the scope of the present invention.
使用「~」表示之數值範圍意指包含「~」之前後所記載之數值作為下限值及上限值之範圍。 The numerical range expressed by "~" means the range including the values recorded before and after "~" as the lower limit and upper limit.
作為本發明之積層基板之特徵點,可例舉:將吸附層之端面設為傾斜面;將傾斜面之傾斜角度調整至特定之範圍;及於支持基材之表面設置有未配置吸附層之周緣區域。 Characteristic points of the laminated substrate of the present invention include: making the end surface of the adsorption layer an inclined surface; adjusting the inclination angle of the inclined surface to a specific range; and providing a surface without an adsorption layer on the surface of the supporting base material. Peripheral area.
本發明人發現,藉由採用如上所述之構成,可獲得所需之效果。獲得所需效果之詳情並不明瞭,但認為,首先,於支持基材之表面設置周緣區域,以該周緣區域與聚醯亞胺膜相接之方式將聚醯亞胺膜配置於積層基板上,藉此,基於聚醯亞胺膜與玻璃製支持基材之相互作用,聚醯亞胺膜與端部之剝離受到抑制。又認為,藉由將具有特定之傾斜角度之傾斜面設置於端部,可抑制於聚醯亞胺膜與吸附層及支持基材之間產生空隙等,其 結果,聚醯亞胺膜之剝離受到抑制。 The present inventor found that by adopting the above-mentioned structure, the desired effect can be obtained. The details of obtaining the desired effect are not clear, but it is thought that first, a peripheral area is provided on the surface of the supporting base material, and the polyimide film is arranged on the laminated substrate so that the peripheral area is in contact with the polyimide film. , thereby, based on the interaction between the polyimide film and the glass support base material, peeling off of the polyimide film and the end is suppressed. It is also believed that by providing an inclined surface with a specific inclination angle at the end, it is possible to suppress the occurrence of gaps between the polyimide film, the adsorption layer and the supporting base material. As a result, peeling of the polyimide film is inhibited.
<積層基板> <Laminated substrate>
圖1係模式性地表示本發明之積層基板之一實施方式之剖視圖。圖2係圖1所示之積層基板之俯視圖。 FIG. 1 is a cross-sectional view schematically showing one embodiment of the multilayer substrate of the present invention. FIG. 2 is a top view of the laminated substrate shown in FIG. 1 .
積層基板10具備玻璃製之支持基材12、及配置於支持基材12上之吸附層14。 The laminated substrate 10 includes a glass supporting base material 12 and an adsorption layer 14 arranged on the supporting base material 12 .
如圖1及圖2所示,吸附層14具有支持基材12側之第1主面14a、與第1主面14a為相反側之第2主面14b、及連接第1主面14a與第2主面14b之端面14c。 As shown in FIGS. 1 and 2 , the adsorption layer 14 has a first main surface 14a on the supporting base material 12 side, a second main surface 14b on the opposite side to the first main surface 14a, and connects the first main surface 14a and the second main surface 14a. 2. End surface 14c of main surface 14b.
吸附層14之端面14c係自第2主面14b向第1主面14a突出之傾斜面。再者,吸附層14之形狀(主面之形狀)為矩形狀,4個端面14c全部為傾斜面。 The end surface 14c of the adsorption layer 14 is an inclined surface protruding from the second main surface 14b toward the first main surface 14a. Furthermore, the shape of the adsorption layer 14 (the shape of the main surface) is a rectangular shape, and all four end surfaces 14c are inclined surfaces.
又,如圖1及圖2所示,於支持基材12之吸附層14側之表面具有未配置吸附層14之周緣區域12a。換言之,吸附層14以於支持基材12殘留不與吸附層14接觸之邊緣狀之區域(周緣區域12a)之方式配置於支持基材12上。 Furthermore, as shown in FIGS. 1 and 2 , the surface of the support base 12 on the adsorption layer 14 side has a peripheral region 12 a in which the adsorption layer 14 is not arranged. In other words, the adsorption layer 14 is arranged on the support base material 12 such that an edge-shaped region (peripheral region 12 a ) that is not in contact with the adsorption layer 14 remains on the support base material 12 .
於如上所述之態樣中,吸附層14之配置區域之面積窄於支持基材12之表面(主面)之面積,上述周緣區域12a相當於較支持基材12之外周緣位於更靠內側之區域。 In the aspect described above, the area of the arrangement area of the adsorption layer 14 is narrower than the area of the surface (main surface) of the supporting base material 12 , and the peripheral area 12 a is located further inside than the outer peripheral edge of the supporting base material 12 . area.
再者,於圖1及圖2中,支持基材12之形狀(主面之形狀)及吸附層14之形狀(主面之形狀)均為矩形狀,以構成支持基材12之外周緣之一邊與構成吸附層14之外周緣之一邊平行之方式於支持基材12上配置有吸附層14。 Furthermore, in Figures 1 and 2, the shape of the supporting base material 12 (the shape of the main surface) and the shape of the adsorption layer 14 (the shape of the main surface) are both rectangular, so as to form the outer periphery of the supporting base material 12. The adsorption layer 14 is arranged on the support base 12 so that one side thereof is parallel to one side constituting the outer periphery of the adsorption layer 14 .
於積層基板10之支持基材12之周緣區域上、及吸附層14之第2主面14b上塗佈聚醯亞胺清漆,其後,形成聚醯亞胺膜,下文中將詳細敍述。於該聚醯亞胺膜上形成電子裝置用構件,其後,對形成有電子裝置用構件之聚醯亞胺膜(即,電子裝置)進行分離。如此,製造電子裝置。 Polyimide varnish is coated on the peripheral area of the supporting base material 12 of the laminated substrate 10 and on the second main surface 14b of the adsorption layer 14, and then a polyimide film is formed, which will be described in detail below. A member for an electronic device is formed on the polyimide film, and then the polyimide film (that is, the electronic device) on which the member for an electronic device is formed is separated. In this way, an electronic device is manufactured.
以下,對於構成積層基板10之各層(支持基材12、吸附層14)進行詳細敍述,其後,對於積層基板10之製造方法進行詳細敍述。 Hereinafter, each layer (support base material 12, adsorption layer 14) constituting the laminated substrate 10 will be described in detail, and then, a method for manufacturing the laminated substrate 10 will be described in detail.
(支持基材) (support base material)
支持基材12係支持並補強聚醯亞胺膜之構件,例如為玻璃板。 The supporting substrate 12 is a member that supports and reinforces the polyimide film, such as a glass plate.
作為玻璃之種類,較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高二氧化矽玻璃、以其他氧化矽為主要成分之氧化物系玻璃。作為氧化物系玻璃,較佳為由氧化物換算所得之氧化矽之含量為40~90質量%之玻璃。 As the type of glass, preferred are alkali-free borosilicate glass, borosilicate glass, soda-lime glass, high silica glass, and other oxide-based glasses containing silica as the main component. As the oxide-based glass, glass having a silicon oxide content of 40 to 90% by mass in terms of oxide is preferred.
作為玻璃板,更具體而言,可例舉:包含無鹼硼矽酸玻璃之玻璃板(AGC股份有限公司製造之商品名「AN100」、「AN Wizus」)等。 More specifically, examples of the glass plate include glass plates containing alkali-free borosilicate glass (trade names "AN100" and "AN Wizus" manufactured by AGC Co., Ltd.).
關於玻璃板之製造方法,通常可使玻璃原料熔融,使熔融玻璃成形成板狀而獲得。此種成形方法可為通常方法,例如可例舉:浮式法、熔融法、流孔下引法。 Regarding the manufacturing method of a glass plate, it is usually obtained by melting a glass raw material and shaping the molten glass into a plate shape. This forming method may be a common method, such as float method, melting method, orifice down-drawing method.
支持基材12之形狀(主面之形狀)無特別限制,較佳為矩形狀。 The shape of the supporting base material 12 (the shape of the main surface) is not particularly limited, but is preferably rectangular.
如上所述,於支持基材12表面之周緣區域12a上未配置吸附層14。即,支持基材12之周緣區域12a之表面露出。 As described above, the adsorption layer 14 is not disposed on the peripheral region 12 a of the surface of the support base material 12 . That is, the surface of the peripheral region 12a of the supporting base material 12 is exposed.
周緣區域12a之寬度W無特別限制,較佳為1~30mm,更佳為3~10mm。如圖2所示,所謂周緣區域12a之寬度W相當於自支持基材12之外周緣至吸附層14之外周緣為止之距離。 The width W of the peripheral area 12a is not particularly limited, but is preferably 1 to 30 mm, and more preferably 3 to 10 mm. As shown in FIG. 2 , the width W of the peripheral region 12 a corresponds to the distance from the outer peripheral edge of the supporting base material 12 to the outer peripheral edge of the adsorption layer 14 .
只要周緣區域12a之寬度為30mm以下,則形成下述電子裝置時之有效面積變得更大,從而提高電子裝置之製作效率。又,藉由使周緣區域12a之寬度為1mm以上,聚醯亞胺膜變得更難發生剝離。 As long as the width of the peripheral area 12a is 30 mm or less, the effective area when forming the following electronic device becomes larger, thereby improving the manufacturing efficiency of the electronic device. Furthermore, by setting the width of the peripheral region 12a to 1 mm or more, the polyimide film becomes more difficult to peel off.
支持基材12較佳為可撓性低。因此,支持基材12之厚度較佳為0.3mm以上,更佳為0.5mm以上。 The support base material 12 is preferably low in flexibility. Therefore, the thickness of the supporting base material 12 is preferably 0.3 mm or more, and more preferably 0.5 mm or more.
另一方面,支持基材12之厚度較佳為1.0mm以下。 On the other hand, the thickness of the supporting base material 12 is preferably 1.0 mm or less.
(吸附層) (adsorption layer)
吸附層14係用於防止配置於其上之聚醯亞胺膜發生剝離之膜。 The adsorption layer 14 is a film used to prevent the polyimide film disposed thereon from peeling off.
吸附層14以於支持基材12殘留不與吸附層14接觸之周緣區域12a之方式配置於支持基材12上。 The adsorption layer 14 is arranged on the support base material 12 such that a peripheral region 12 a that is not in contact with the adsorption layer 14 remains on the support base material 12 .
如上所述,吸附層14之端面14c係自第2主面14b向第1主面14a突出之傾斜面。較佳為複數個端面14c全部為傾斜面。 As mentioned above, the end surface 14c of the adsorption layer 14 is an inclined surface protruding from the second main surface 14b toward the first main surface 14a. It is preferable that all the end surfaces 14c are inclined surfaces.
於吸附層14中,傾斜面與第1主面14a所成之角度θ未達10°。其中,要想於塗佈聚醯亞胺清漆而形成聚醯亞胺膜時更加抑制聚醯亞胺膜發生剝離,角度θ較佳為8°以下,更佳為5°以下。下限無特別限制,較佳為1°以上。 In the adsorption layer 14, the angle θ formed by the inclined surface and the first main surface 14a does not reach 10°. Among them, in order to further suppress peeling of the polyimide film when the polyimide varnish is applied to form the polyimide film, the angle θ is preferably 8° or less, more preferably 5° or less. The lower limit is not particularly limited, but is preferably 1° or more.
吸附層14中之傾斜面與第1主面14a所成之角度θ係使用三鷹光器股份有限公司製造之非接觸表面性狀測定裝置「PF-60」,根據吸附層14之剖面形狀而求取。更詳細而言,如圖1所示,根據吸附層14之剖視圖,測定線段AB之長度及線段AC之長度,根據下述式計算角度θ。 The angle θ formed by the inclined surface of the adsorption layer 14 and the first main surface 14a is determined based on the cross-sectional shape of the adsorption layer 14 using a non-contact surface property measuring device "PF-60" manufactured by Mitaka Optical Instruments Co., Ltd. . More specifically, as shown in FIG. 1 , based on the cross-sectional view of the adsorption layer 14 , the length of the line segment AB and the length of the line segment AC are measured, and the angle θ is calculated based on the following equation.
θ=arctan(AC/AB) θ=arctan(AC/AB)
吸附層14可為有機層,亦可為無機層。 The adsorption layer 14 may be an organic layer or an inorganic layer.
作為有機層之材質,例如可例舉:丙烯酸樹脂、聚烯烴樹脂、聚胺基甲酸酯樹脂、聚醯亞胺樹脂、矽酮樹脂、聚醯亞胺矽酮樹脂、氟樹脂。又,亦可將若干種類之樹脂加以混合而構成吸附層14。 Examples of the material of the organic layer include acrylic resin, polyolefin resin, polyurethane resin, polyimide resin, silicone resin, polyimide silicone resin, and fluororesin. Alternatively, several types of resins may be mixed to form the adsorption layer 14 .
作為無機層之材質,例如可例舉:氧化物、氮化物、氮氧化物、碳化物、碳氮化物、矽化物、氟化物。作為氧化物(較佳為金屬氧化物)、氮化物(較佳為金屬氮化物)、氮氧化物(較佳為金屬氮氧化物),例如可例舉:選自Si、Hf、Zr、Ta、Ti、Y、Nb、Na、Co、Al、Zn、Pb、Mg、Bi、La、Ce、Pr、Sm、Eu、Gd、Dy、Er、Sr、Sn、In及Ba之1種以上之元素之氧化物、氮化物、氮氧化物。 Examples of the material of the inorganic layer include oxides, nitrides, oxynitrides, carbides, carbonitrides, silicones, and fluorides. Examples of oxides (preferably metal oxides), nitrides (preferably metal nitrides), and oxynitrides (preferably metal oxynitrides) include those selected from the group consisting of Si, Hf, Zr, and Ta , Ti, Y, Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, Pr, Sm, Eu, Gd, Dy, Er, Sr, Sn, In and Ba, one or more elements of oxides, nitrides, and nitrogen oxides.
作為碳化物(較佳為金屬碳化物)、碳氮化物(較佳為金屬碳氮化物),例如可例舉:選自Ti、W、Si、Zr及Nb之1種以上之元素之碳化物、碳氮化物、碳氧化物。 Examples of carbides (preferably metal carbides) and carbonitrides (preferably metal carbonitrides) include carbides of one or more elements selected from the group consisting of Ti, W, Si, Zr, and Nb. , carbonitrides, carbon oxides.
作為矽化物(較佳為金屬矽化物),例如可例舉:選自Mo、W及Cr之1種以上之元素之矽化物。 Examples of the silicide (preferably metal silicide) include a silicide of one or more elements selected from the group consisting of Mo, W, and Cr.
作為氟化物(較佳為金屬氟化物),例如可例舉:選自Mg、Y、La及Ba之1種以上之元素之氟化物。 Examples of the fluoride (preferably metal fluoride) include fluorides of one or more elements selected from the group consisting of Mg, Y, La and Ba.
吸附層14亦可為電漿聚合膜。 The adsorption layer 14 may also be a plasma polymerization film.
於吸附層14為電漿聚合膜之情形時,作為形成電漿聚合膜之材料,可例舉:CF4、CHF3、C2H6、C3H6、C2H2、CH3F、C4H8等氟碳單體;甲烷、乙烷、丙烷、乙烯、丙烯、乙炔、苯、甲苯等碳氫單體;氫、SF6等。 When the adsorption layer 14 is a plasma polymerization film, examples of materials for forming the plasma polymerization film include: CF 4 , CHF 3 , C 2 H 6 , C 3 H 6 , C 2 H 2 , CH 3 F , C 4 H 8 and other fluorocarbon monomers; methane, ethane, propane, ethylene, propylene, acetylene, benzene, toluene and other hydrocarbon monomers; hydrogen, SF 6 , etc.
其中,就耐熱性或剝離性之方面而言,作為吸附層14之材質,較佳為矽酮樹脂、聚醯亞胺矽酮樹脂,更佳為矽酮樹脂,尤佳為由縮合反應型矽酮所形成之矽酮樹脂。 Among them, in terms of heat resistance or peelability, as the material of the adsorption layer 14, silicone resin, polyimide silicone resin is preferred, silicone resin is more preferred, and condensation reaction type silicon is particularly preferred. Silicone resin formed from ketones.
以下,對於吸附層為矽酮樹脂層之形態進行詳細敍述。 Hereinafter, the form in which the adsorption layer is a silicone resin layer will be described in detail.
所謂矽酮樹脂係包含特定之有機矽氧烷單元之樹脂,通常使硬化性矽酮硬化而獲得。硬化性矽酮根據其硬化機制而分類成加成反應型矽酮、縮合反應型矽酮、紫外線硬化型矽酮及電子束硬化型矽酮,該等均可使用。其中,較佳為縮合反應型矽酮。 The so-called silicone resin is a resin containing a specific organosiloxane unit and is usually obtained by hardening curable silicone. Hardening silicone is classified according to its hardening mechanism into addition reaction type silicone, condensation reaction type silicone, ultraviolet curing type silicone, and electron beam curing type silicone, and any of these can be used. Among them, condensation reaction type silicone is preferred.
作為縮合反應型矽酮,可較佳地使用作為單體之水解性有機矽烷化合物或其混合物(單體混合物)、或者使單體或單體混合物發生部分水解縮合反應而獲得之部分水解縮合物(有機聚矽氧烷)。 As the condensation reaction type silicone, a hydrolyzable organosilane compound as a monomer or a mixture thereof (monomer mixture), or a partially hydrolyzed condensate obtained by subjecting a monomer or a monomer mixture to a partial hydrolysis condensation reaction can be preferably used. (organopolysiloxane).
藉由使用該縮合反應型矽酮,進行水解-縮合反應(溶膠凝膠反應),可形成矽酮樹脂。 By using this condensation reaction type silicone, a hydrolysis-condensation reaction (sol-gel reaction) is performed to form a silicone resin.
吸附層14較佳為使用包含硬化性矽酮之硬化性組合物而形成。 The adsorption layer 14 is preferably formed using a curable composition containing curable silicone.
硬化性組合物除了包含硬化性矽酮以外,亦可包含溶劑、鉑觸媒(使用加成反應型矽酮作為硬化性矽酮之情形)、調平劑、金屬化合物等。作為金屬化合物中所含之金屬元素,例如可例舉:3d過渡金屬、4d過渡金屬、鑭系元素系金屬、鉍(Bi)、鋁(Al)、錫(Sn)。金屬化合物之含量無特別限制,可適當調整。 In addition to the curable silicone, the curable composition may also contain a solvent, a platinum catalyst (when an addition reaction type silicone is used as the curable silicone), a leveling agent, a metal compound, etc. Examples of the metal element contained in the metal compound include 3d transition metals, 4d transition metals, lanthanide series metals, bismuth (Bi), aluminum (Al), and tin (Sn). The content of the metal compound is not particularly limited and can be adjusted appropriately.
吸附層14較佳為具有羥基。構成吸附層14之矽酮樹脂之Si-O-Si鍵之一部分被切斷,而可出現羥基。又,於使用縮合反應型矽酮之情形時,其羥基能夠成為吸附層14之羥基。 The adsorption layer 14 preferably has a hydroxyl group. Part of the Si-O-Si bonds of the silicone resin constituting the adsorption layer 14 is cut, and hydroxyl groups may appear. In addition, when condensation reaction type silicone is used, its hydroxyl group can become the hydroxyl group of the adsorption layer 14 .
吸附層14之第1主面14a與第2主面14b之間之厚度較佳為50μm以下,更佳為30μm以下,進而較佳為12μm以下。另一方面,吸附層14之厚度較佳為超過1μm,要想使異物嵌埋性更加優異,更佳為6μm以上。上述厚度係藉由接觸式膜厚測定裝置測定5點以上之任意位置之吸附層14之厚度,並將其等進行算術平均而得之值。 The thickness between the first main surface 14a and the second main surface 14b of the adsorption layer 14 is preferably 50 μm or less, more preferably 30 μm or less, further preferably 12 μm or less. On the other hand, the thickness of the adsorption layer 14 is preferably more than 1 μm, and in order to achieve better foreign matter embedding properties, the thickness is more preferably 6 μm or more. The above-mentioned thickness is a value obtained by measuring the thickness of the adsorption layer 14 at five or more arbitrary positions with a contact-type film thickness measuring device and averaging the results arithmetic.
再者,所謂異物嵌埋性優異意指,即便於支持基材12與吸附層14之間具有異物,異物亦會被吸附層14嵌埋。若異物之嵌埋性優異,則吸附層不易產生由異物引起之凸部,當於聚醯亞胺膜上形成電子裝置用構件時,可抑制由凸部所引起之電子裝置用構件中之斷線等風險。再者,由於產生上述凸部時所形成之空隙係以氣泡之形式被觀察到,故而可藉由有無產生氣泡來評價異物嵌埋性。 Furthermore, excellent foreign matter embedding properties means that even if foreign matter is present between the support base material 12 and the adsorption layer 14 , the foreign matter will be embedded in the adsorption layer 14 . If the embedding property of foreign matter is excellent, the adsorption layer will be less likely to generate protrusions caused by foreign matter. When forming an electronic device member on the polyimide film, breakage of the electronic device member caused by the protrusions can be suppressed. line risks. Furthermore, since the voids formed when the above-mentioned convex portions are generated are observed in the form of bubbles, the foreign matter embedding property can be evaluated based on the presence or absence of bubbles.
若於玻璃製之支持基材12上形成聚醯亞胺膜,並進行高溫熱處理, 則聚醯亞胺膜發生黃變,故而難以應用於透明之電子裝置。然而,其機制雖並不明確,但藉由在玻璃上形成吸附層14,於吸附層14上形成聚醯亞胺膜,可抑制由高溫熱處理所導致之聚醯亞胺膜之黃變。 If a polyimide film is formed on the glass supporting substrate 12 and subjected to high-temperature heat treatment, The polyimide film will turn yellow, making it difficult to apply to transparent electronic devices. However, although the mechanism is not clear, by forming the adsorption layer 14 on the glass and forming the polyimide film on the adsorption layer 14, the yellowing of the polyimide film caused by high-temperature heat treatment can be suppressed.
(保護膜) (protective film)
積層基板10亦可具有以覆蓋吸附層14之方式配置之保護膜。保護膜係在將下述聚醯亞胺清漆塗佈於吸附層14上之前保護吸附層14之表面的膜。 The laminated substrate 10 may have a protective film arranged to cover the adsorption layer 14 . The protective film is a film that protects the surface of the adsorption layer 14 before applying the polyimide varnish described below on the adsorption layer 14 .
作為構成保護膜之材料,例如可例舉:聚醯亞胺樹脂、聚酯樹脂(例如,聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯)、聚烯烴樹脂(例如,聚乙烯、聚丙烯)、聚胺基甲酸酯樹脂。其中,較佳為聚酯樹脂,更佳為聚對苯二甲酸乙二酯。 Examples of materials constituting the protective film include polyimide resin, polyester resin (for example, polyethylene terephthalate (PET), polyethylene naphthalate), polyolefin resin (for example, , polyethylene, polypropylene), polyurethane resin. Among them, polyester resin is preferred, and polyethylene terephthalate is more preferred.
為了減少自外部所受到之力之影響,保護膜之厚度較佳為20μm以上,更佳為30μm以上,進而較佳為50μm以上。作為保護膜之厚度之上限值,較佳為500μm以下,更佳為300μm以下,進而較佳為100μm以下。 In order to reduce the influence of external force, the thickness of the protective film is preferably 20 μm or more, more preferably 30 μm or more, and further preferably 50 μm or more. The upper limit of the thickness of the protective film is preferably 500 μm or less, more preferably 300 μm or less, and still more preferably 100 μm or less.
保護膜亦可於吸附層14側之表面進而具有密接層。 The protective film may also have an adhesive layer on the surface on the adsorption layer 14 side.
作為密接層,可使用公知之黏著層。作為構成黏著層之黏著劑,例如可例舉:(甲基)丙烯酸系黏著劑、矽酮系黏著劑、聚胺基甲酸酯系黏著劑。 As the adhesive layer, a known adhesive layer can be used. Examples of the adhesive constituting the adhesive layer include: (meth)acrylic adhesive, silicone adhesive, and polyurethane adhesive.
又,密接層亦可由樹脂構成,作為樹脂,例如可例舉:乙酸乙烯酯樹脂、乙烯-乙酸乙烯酯共聚物樹脂、氯乙烯-乙酸乙烯酯共聚樹脂、(甲基)丙烯酸樹脂、丁醛樹脂、聚胺基甲酸酯樹脂、聚苯乙烯彈性體。 Furthermore, the adhesive layer may be made of resin. Examples of the resin include vinyl acetate resin, ethylene-vinyl acetate copolymer resin, vinyl chloride-vinyl acetate copolymer resin, (meth)acrylic resin, and butyraldehyde resin. , polyurethane resin, polystyrene elastomer.
為了於剝離保護膜時減少剝離力,保護膜之表面粗糙度(Ra)較佳為50nm以下,更佳為30nm以下,進而較佳為15nm以下。又,為了可維持保護膜與吸附層密接之狀態,Ra較佳為0.1nm以上,更佳為0.5nm以上。表面粗糙度(Ra)係使用Ryoka Systems公司製造之非接觸表面-層剖面形狀計測系統「Vertscan R3300-lite」進行測定。 In order to reduce the peeling force when peeling off the protective film, the surface roughness (Ra) of the protective film is preferably 50 nm or less, more preferably 30 nm or less, and further preferably 15 nm or less. In addition, in order to maintain the close contact between the protective film and the adsorption layer, Ra is preferably 0.1 nm or more, more preferably 0.5 nm or more. Surface roughness (Ra) was measured using the non-contact surface-layer cross-sectional shape measurement system "Vertscan R3300-lite" manufactured by Ryoka Systems.
<積層基板之製造方法> <Manufacturing method of laminated substrate>
積層基板之製造方法無特別限制,可例舉公知之方法。 The manufacturing method of the laminated substrate is not particularly limited, and publicly known methods can be used.
其中,要想生產性更加優異,可例舉如下方法,即,準備具有臨時支持體及配置於臨時支持體上且加熱處理後成為吸附層之前驅物膜的轉印膜,將轉印膜中之前驅物膜貼合於玻璃製之支持基材上之特定位置,對於所獲得之具有玻璃製之支持基材、前驅物膜及臨時支持體之積層體實施加熱處理。藉由實施加熱處理,可使前驅物膜之端部流化,形成上述具有特定之傾斜面之吸附層。再者,當將前驅物膜貼合於支持基材上時,以形成上述周緣區域之方式將前驅物膜貼合於支持基材上。 Among them, in order to achieve better productivity, for example, a transfer film having a temporary support and a precursor film arranged on the temporary support and heat-treated to become an adsorption layer precursor film is prepared, and the transfer film is The precursor film is bonded to a specific position on the glass support substrate, and the obtained laminate including the glass support substrate, the precursor film, and the temporary support is subjected to a heat treatment. By performing heat treatment, the end portion of the precursor film can be fluidized to form the above-mentioned adsorption layer having a specific inclined surface. Furthermore, when the precursor film is bonded to the supporting base material, the precursor film is bonded to the supporting base material in such a manner that the above-mentioned peripheral region is formed.
又,除上述以外,亦可藉由塗佈而將加熱處理後成為吸附層之前驅物膜配置於玻璃製支持基材之特定位置,實施加熱處理,藉此形成上述具有特定之傾斜面之吸附層。 In addition, in addition to the above, the precursor film that is heat-treated to become an adsorption layer can also be disposed at a specific position on a glass support substrate by coating, and then heat-treated to form the above-mentioned adsorption layer with a specific inclined surface. layer.
作為上述前驅物膜,例如可例舉:對塗佈包含硬化性矽酮之硬化性組合物所形成之塗膜實施加熱處理而形成之膜。作為塗膜之加熱處理之加 熱溫度,較佳為50~200℃,作為加熱時間,較佳為5~20分鐘。 Examples of the precursor film include a film formed by subjecting a coating film formed by applying a curable composition containing curable silicone to a heat treatment. As an addition to the heat treatment of the coating film The heating temperature is preferably 50 to 200°C, and the heating time is preferably 5 to 20 minutes.
如上所述,藉由對前驅物膜實施加熱處理,可使吸附層之端面形狀成為傾斜面。再者,加熱處理時,較佳為一面施加壓力一面實施。具體而言,較佳為使用高壓釜實施加熱處理及加壓處理。 As described above, by subjecting the precursor film to heat treatment, the shape of the end surface of the adsorption layer can be made into an inclined surface. Furthermore, during the heat treatment, it is preferably carried out while applying pressure. Specifically, it is preferable to perform heat treatment and pressure treatment using an autoclave.
作為加熱處理時之加熱溫度,較佳為50~350℃,更佳為55~300℃,進而較佳為60~250℃。作為加熱時間,較佳為10~60分鐘,更佳為20~40分鐘。 The heating temperature during the heat treatment is preferably 50 to 350°C, more preferably 55 to 300°C, and further preferably 60 to 250°C. The heating time is preferably 10 to 60 minutes, more preferably 20 to 40 minutes.
作為加壓處理時之壓力,較佳為0.5~1.5MPa,更佳為0.8~1.0MPa。 The pressure during the pressure treatment is preferably 0.5 to 1.5 MPa, more preferably 0.8 to 1.0 MPa.
又,加熱處理亦可進行複數次。於實施複數次加熱處理之情形時,可變更每一次之加熱條件。 In addition, the heat treatment may be performed a plurality of times. When performing heat treatment multiple times, the heating conditions for each time can be changed.
例如,於實施複數次加熱處理之情形時,可改變加熱溫度。例如,於實施2次加熱處理之情形時,可於未達100℃之溫度條件下實施第1次加熱處理,於100℃以上之溫度條件下實施第2次加熱處理。 For example, when performing a plurality of heat treatments, the heating temperature may be changed. For example, when heat treatment is performed twice, the first heat treatment may be carried out at a temperature of less than 100°C, and the second heat treatment may be carried out at a temperature of 100°C or above.
又,於實施複數次加熱處理之情形時,可改變有無加壓處理。例如,於實施2次加熱處理之情形時,可按如下方式進行,即,於第1次加熱處理中一併實施加壓處理,於第2次加熱處理中不實施加壓處理。 In addition, when heat treatment is performed a plurality of times, the presence or absence of pressure treatment can be changed. For example, when the heat treatment is performed twice, the pressure treatment may be performed together with the first heat treatment, and the pressure treatment may not be performed during the second heat treatment.
再者,當使用轉印膜製造積層基板時,可於剝離臨時支持體後,實施上述加熱處理,亦可於臨時支持體配置於吸附層上之狀態下直接實施加熱處理。又,於實施複數次加熱處理之情形時,可於各加熱處理之間剝離臨時支持體。例如,可於實施第1次加熱處理後,剝離臨時支持體,並實 施第2次加熱處理。 Furthermore, when a transfer film is used to manufacture a laminated substrate, the above-mentioned heat treatment can be performed after peeling off the temporary support, or the heat treatment can be performed directly with the temporary support disposed on the adsorption layer. In addition, when heat treatment is performed a plurality of times, the temporary support may be peeled off between each heat treatment. For example, after the first heat treatment, the temporary support can be peeled off and the Apply the second heat treatment.
可對積層基板之吸附層之表面實施表面處理。 Surface treatment can be performed on the surface of the adsorption layer of the laminated substrate.
作為表面處理,例如可例舉:電暈處理、電漿處理、紫外線臭氧處理(ultraviolet-ozone treatment),較佳為電暈處理。 Examples of surface treatment include corona treatment, plasma treatment, and ultraviolet-ozone treatment, and corona treatment is preferred.
於如下所述在吸附層之上形成聚醯亞胺膜之情形時,為了降低聚醯亞胺膜之表面粗糙度,吸附層之表面粗糙度(Ra)較佳為50nm以下,更佳為30nm以下,進而較佳為15nm以下。又,為了可維持聚醯亞胺膜與吸附層密接之狀態,Ra較佳為0.1nm以上,更佳為0.5nm以上。 When a polyimide film is formed on the adsorption layer as described below, in order to reduce the surface roughness of the polyimide film, the surface roughness (Ra) of the adsorption layer is preferably 50 nm or less, more preferably 30 nm. or less, and more preferably 15 nm or less. In addition, in order to maintain the close contact between the polyimide film and the adsorption layer, Ra is preferably 0.1 nm or more, more preferably 0.5 nm or more.
可使用上述積層基板10,製造依次具有支持基材12、吸附層14及被支持材之構造體。作為被支持材,亦可積層聚醯亞胺膜18以外之材料。作為被支持材,例如可例舉:聚醯亞胺樹脂膜、環氧樹脂膜、感光性抗蝕劑、聚酯樹脂膜(例如,聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯)、聚烯烴樹脂膜(例如,聚乙烯、聚丙烯)、聚胺基甲酸酯樹脂膜、金屬箔(例如,銅箔、鋁箔)、濺鍍膜(例如,銅、鈦、鋁、鎢、氮化矽、氧化矽、非晶矽)、TGV(Through Glass Via,玻璃通孔)基板、薄板玻璃基板、附犧牲層之薄板玻璃基板、ABF(Ajinomoto Build-up Film,味之素堆積膜)、藍寶石基板、矽基板、TSV(Through Silicon Via,矽通孔)基板、LED(Light Emitting Diode,發光二極體)晶片、顯示面板(例如,LCD、OLED、μ-LED)、人造鑽石、間隔紙等。 The above-mentioned laminated substrate 10 can be used to manufacture a structure including the supporting base material 12, the adsorption layer 14, and the supported material in this order. As the supported material, materials other than the polyimide film 18 may be laminated. Examples of the supported material include polyimide resin films, epoxy resin films, photosensitive resists, and polyester resin films (for example, polyethylene terephthalate, polyethylene naphthalate). ester), polyolefin resin film (e.g., polyethylene, polypropylene), polyurethane resin film, metal foil (e.g., copper foil, aluminum foil), sputtered film (e.g., copper, titanium, aluminum, tungsten, Silicon nitride, silicon oxide, amorphous silicon), TGV (Through Glass Via) substrate, thin glass substrate, thin glass substrate with sacrificial layer, ABF (Ajinomoto Build-up Film, Ajinomoto build-up film) , sapphire substrate, silicon substrate, TSV (Through Silicon Via, silicon through hole) substrate, LED (Light Emitting Diode, light emitting diode) chip, display panel (for example, LCD, OLED, μ-LED), artificial diamond, spacer paper etc.
<積層體及其製造方法> <Laminated body and its manufacturing method>
使用上述積層基板10,可製造圖3所示之具有支持基材12、吸附層14及聚醯亞胺膜18之積層體16。 Using the above-mentioned laminated substrate 10, a laminated body 16 having a supporting base material 12, an adsorption layer 14, and a polyimide film 18 as shown in FIG. 3 can be produced.
具體而言,作為積層體16之製造方法,可例舉如下之方法,即,於積層基板10之吸附層14側塗佈包含聚醯亞胺及溶劑之聚醯亞胺清漆,於周緣區域12a上及吸附層14上形成聚醯亞胺膜18,而形成依次具有支持基材12、吸附層14及聚醯亞胺膜18之積層體。 Specifically, as a method of manufacturing the laminated body 16, there is a method of applying a polyimide varnish containing polyimide and a solvent on the adsorption layer 14 side of the laminated substrate 10, and applying the polyimide varnish to the peripheral region 12a. The polyimide film 18 is formed on the adsorption layer 14 and the support base 12, the adsorption layer 14 and the polyimide film 18 are formed in this order.
以下,對於上述製造方法進行詳細敍述,其後,對於聚醯亞胺膜18之構成進行詳細敍述。 The above-mentioned manufacturing method will be described in detail below, and then the structure of the polyimide film 18 will be described in detail.
(聚醯亞胺清漆) (polyimide varnish)
聚醯亞胺清漆包含聚醯亞胺或其前驅物及溶劑。 The polyimide varnish contains polyimide or its precursor and a solvent.
聚醯亞胺通常係藉由使四羧酸二酐與二胺縮聚,並進行醯亞胺化而獲得。作為聚醯亞胺,較佳為具有溶劑可溶性。 Polyimide is usually obtained by polycondensing tetracarboxylic dianhydride and diamine and performing imidization. The polyimide is preferably solvent-soluble.
作為所使用之四羧酸二酐,可例舉:芳香族四羧酸二酐、脂肪族四羧酸二酐。作為所使用之二胺,可例舉:芳香族二胺、脂肪族二胺。 Examples of the tetracarboxylic dianhydride used include aromatic tetracarboxylic dianhydride and aliphatic tetracarboxylic dianhydride. Examples of the diamine used include aromatic diamines and aliphatic diamines.
作為芳香族四羧酸二酐,例如可例舉:均苯四甲酸二酐(1,2,4,5-苯四羧酸二酐)、3,3',4,4'-二苯甲酮四羧酸二酐、3,3',4,4'-聯苯四羧酸二酐、3,3',4,4'-二苯醚四羧酸二酐。 Examples of aromatic tetracarboxylic dianhydride include: pyromellitic dianhydride (1,2,4,5-benzenetetracarboxylic dianhydride), 3,3',4,4'-diphenylmethyl Ketone tetracarboxylic dianhydride, 3,3',4,4'-biphenyl tetracarboxylic dianhydride, 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride.
作為脂肪族四羧酸二酐,有環式或非環式之脂肪族四羧酸二酐,作為環式脂肪族四羧酸二酐,可例舉:1,2,3,4-環丁烷四羧酸二酐、1,2,4,5-環己烷四羧酸二酐、1,2,4,5-環戊烷四羧酸二酐等,作為非環式脂肪族四羧酸二酐,可例舉:1,2,3,4-丁烷四羧酸二酐、1,2,3,4-戊烷四羧酸二酐等。 As aliphatic tetracarboxylic dianhydride, there are cyclic or acyclic aliphatic tetracarboxylic dianhydride. Examples of cyclic aliphatic tetracarboxylic dianhydride include: 1,2,3,4-cyclobutane Alkane tetracarboxylic dianhydride, 1,2,4,5-cyclohexane tetracarboxylic dianhydride, 1,2,4,5-cyclopentane tetracarboxylic dianhydride, etc., as non-cyclic aliphatic tetracarboxylic acids Examples of acid dianhydride include 1,2,3,4-butanetetracarboxylic dianhydride, 1,2,3,4-pentanetetracarboxylic dianhydride, and the like.
作為芳香族二胺,例如可例舉:4,4'-氧基二胺基苯(4,4'-二胺基二苯醚)、1,3-雙(3-胺基苯氧基)苯、4,4'-雙(3-胺基苯氧基)聯苯、1,4-二胺基苯、1,3-二胺基苯。 Examples of the aromatic diamine include: 4,4'-oxydiaminobenzene (4,4'-diaminodiphenyl ether), 1,3-bis(3-aminophenoxy) Benzene, 4,4'-bis(3-aminophenoxy)biphenyl, 1,4-diaminobenzene, 1,3-diaminobenzene.
作為脂肪族二胺,可例舉:乙二胺、六亞甲基二胺、聚乙二醇雙(3-胺基丙基)醚、聚丙二醇雙(3-胺基丙基)醚等非環式脂肪族二胺、1,3-雙(胺基甲基)環己烷、1,4-雙(胺基甲基)環己烷、異佛爾酮二胺、降烷二胺等環式脂肪族二胺。 Examples of aliphatic diamines include ethylene diamine, hexamethylenediamine, polyethylene glycol bis(3-aminopropyl) ether, polypropylene glycol bis(3-aminopropyl) ether, and other non-alphatic diamines. Cyclic aliphatic diamine, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, isophorone diamine, nor Alkanediamine and other cyclic aliphatic diamines.
所謂聚醯亞胺之前驅物意指為進行醯亞胺化前之狀態之聚醯胺酸(即所謂聚醯胺酸(polyamic acid)及/或聚醯胺酸酯)。 The so-called polyimide precursor means polyamide acid in a state before imidization (that is, so-called polyamic acid and/or polyamic acid ester).
溶劑只要為使聚醯亞胺或其前驅物溶解之溶劑即可,例如可例舉:酚系溶劑(例如間甲酚)、醯胺系溶劑(例如,N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺)、內酯系溶劑(例如,γ-丁內酯、δ-戊內酯、ε-己內酯、γ-巴豆酸內酯、γ-己內酯、α-甲基-γ-丁內酯、γ-戊內酯、α-乙醯基-γ-丁內酯、δ-己內酯)、亞碸系溶劑(例如,N,N-二甲基亞碸)、酮系溶劑(例如,丙酮、甲基乙基酮、甲基異丁基酮、環己酮)、酯系溶劑(例如,乙酸甲酯、乙酸乙酯、乙酸丁酯、碳酸二甲酯)。 The solvent may be a solvent that dissolves the polyimide or its precursor. Examples thereof include: phenolic solvents (for example, m-cresol), amide solvents (for example, N-methyl-2-pyrrolidone). , N,N-dimethylformamide, N,N-dimethylacetamide), lactone solvents (for example, γ-butyrolactone, δ-valerolactone, ε-caprolactone, γ - Crotonolactone, γ-caprolactone, α-methyl-γ-butyrolactone, γ-valerolactone, α-acetyl-γ-butyrolactone, δ-caprolactone), triacetin solvents (e.g., N,N-dimethylsterine), ketone solvents (e.g., acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone), ester solvents (e.g., methyl acetate ester, ethyl acetate, butyl acetate, dimethyl carbonate).
(順序) (sequence)
於積層基板10之吸附層14側塗佈聚醯亞胺清漆之方法無特別限制,可例舉公知之方法。例如可例舉:噴塗法、模嘴塗佈法、旋轉塗佈法、浸漬塗佈法、輥塗法、棒式塗佈法、網版印刷法、凹版塗佈法。 The method of coating the polyimide varnish on the adsorption layer 14 side of the laminated substrate 10 is not particularly limited, and a known method may be used. Examples thereof include spray coating, die coating, spin coating, dip coating, roll coating, rod coating, screen printing, and gravure coating.
塗佈後,可視需要實施加熱處理。 After coating, heat treatment may be performed if necessary.
作為加熱處理之條件,溫度條件較佳為50~500℃,更佳為50~450℃。加熱時間較佳為10~300分鐘,更佳為20~200分鐘。 As the conditions for heat treatment, the temperature condition is preferably 50 to 500°C, and more preferably 50 to 450°C. The heating time is preferably 10 to 300 minutes, more preferably 20 to 200 minutes.
又,加熱處理可進行複數次。於實施複數次加熱處理之情形時,可變更每一次之加熱條件。 In addition, the heat treatment can be performed a plurality of times. When performing heat treatment multiple times, the heating conditions for each time can be changed.
(積層體) (Laminated body)
如圖3所示,積層體16具有支持基材12、吸附層14及聚醯亞胺膜18。 As shown in FIG. 3 , the laminated body 16 has a support base material 12 , an adsorption layer 14 and a polyimide film 18 .
支持基材12及吸附層14之構成如上所述。 The structures of the support base material 12 and the adsorption layer 14 are as described above.
聚醯亞胺膜18配置於支持基材12之周緣區域上及吸附層14上(吸附層14之第2主面14b上及端面14c上)。 The polyimide film 18 is arranged on the peripheral area of the support base 12 and on the adsorption layer 14 (on the second main surface 14b and the end surface 14c of the adsorption layer 14).
聚醯亞胺膜18之厚度較佳為1μm以上,更佳為5μm以上。就柔軟性之方面而言,較佳為1mm以下,更佳為0.2mm以下。 The thickness of the polyimide film 18 is preferably 1 μm or more, and more preferably 5 μm or more. In terms of softness, it is preferably 1 mm or less, and more preferably 0.2 mm or less.
為了於聚醯亞胺膜18上形成電子裝置之高精細之配線等,聚醯亞胺膜18之表面較佳為平滑。具體而言,聚醯亞胺膜18之表面粗糙度Ra較佳為50nm以下,更佳為30nm以下,進而較佳為10nm以下。 In order to form high-definition wiring of electronic devices on the polyimide film 18, the surface of the polyimide film 18 is preferably smooth. Specifically, the surface roughness Ra of the polyimide film 18 is preferably 50 nm or less, more preferably 30 nm or less, and further preferably 10 nm or less.
關於聚醯亞胺膜18之熱膨脹係數,與支持基材12之熱膨脹係數差較小時能夠抑制加熱後或冷卻後之積層體16之翹曲,故較佳。具體而言,聚醯亞胺膜18與支持基材12之熱膨脹係數之差較佳為0~90×10-6/℃,更佳為0~30×10-6/℃。 Regarding the thermal expansion coefficient of the polyimide film 18, it is preferable that the difference between the thermal expansion coefficient of the polyimide film 18 and the thermal expansion coefficient of the supporting base material 12 is small because it can suppress the warpage of the laminated body 16 after heating or cooling. Specifically, the difference in thermal expansion coefficient between the polyimide film 18 and the supporting substrate 12 is preferably 0~90×10 -6 /°C, more preferably 0~30×10 -6 /°C.
聚醯亞胺膜18之面積無特別限制,就電子裝置之生產性之方面而言,較佳為300cm2以上。 The area of the polyimide film 18 is not particularly limited, but in terms of productivity of electronic devices, it is preferably 300 cm 2 or more.
聚醯亞胺膜18可有顏色,亦可為無色透明。 The polyimide film 18 may be colored or colorless and transparent.
積層體16可用於各種用途,例如可例舉製造下述顯示裝置用面板、PV、薄膜二次電池、表面形成有電路之半導體晶圓、接收感測器面板等電子零件之用途。於該等用途中,亦存在如下情形,即,積層體於大氣氛圍下在高溫條件(例如,450℃以上)下暴露(例如,20分鐘以上)。 The laminated body 16 can be used for various purposes, for example, it can be used for manufacturing electronic components such as panels for display devices described below, PVs, thin film secondary batteries, semiconductor wafers with circuits formed on their surfaces, and receiving sensor panels. In these applications, there are cases where the laminated body is exposed to high temperature conditions (for example, 450° C. or higher) (for example, for 20 minutes or more) in an atmospheric atmosphere.
顯示裝置用面板包含LCD、OLED、電子紙、電漿顯示面板、場發射面板、量子點LED面板、微LED顯示面板、MEMS(microelectromechanical system,微機電系統)快門面板等。 Panels for display devices include LCD, OLED, electronic paper, plasma display panels, field emission panels, quantum dot LED panels, micro-LED display panels, MEMS (microelectromechanical system, microelectromechanical system) shutter panels, etc.
接收感測器面板包含電磁波接收感測器面板、X射線受光感測器面板、紫外線受光感測器面板、可見光線受光感測器面板、紅外線受光感測器面板等。接收感測器面板所使用之基板可藉由樹脂等補強片材等加以補強。 The receiving sensor panel includes an electromagnetic wave receiving sensor panel, an X-ray light receiving sensor panel, an ultraviolet light receiving sensor panel, a visible light receiving sensor panel, an infrared light receiving sensor panel, etc. The substrate used for the receiving sensor panel can be reinforced with reinforcing sheets such as resin.
<電子裝置之製造方法> <Manufacturing method of electronic device>
可使用積層體,製造包含聚醯亞胺膜及下述電子裝置用構件之電子裝置。 The laminated body can be used to manufacture an electronic device including a polyimide film and a member for an electronic device described below.
電子裝置之製造方法例如圖4及5所示,為具備如下步驟之方法,即,構件形成步驟,其於積層體16之聚醯亞胺膜18上(聚醯亞胺膜18之與吸附層14側為相反側之表面上)形成電子裝置用構件20,獲得附電子裝置用構件之積層體22;及分離步驟,其自附電子裝置用構件之積層體22獲 得具有聚醯亞胺膜18及電子裝置用構件20之電子裝置24。 The manufacturing method of an electronic device, for example, as shown in FIGS. 4 and 5 , is a method including the following steps, namely, a component forming step on the polyimide film 18 of the laminate 16 (between the polyimide film 18 and the adsorption layer (14 side is the opposite side) forming the electronic device member 20 to obtain a laminated body 22 with the electronic device member; and a separation step to obtain the electronic device member 22 from the laminated body 22 An electronic device 24 having a polyimide film 18 and an electronic device member 20 is obtained.
以下,將形成電子裝置用構件20之步驟稱為「構件形成步驟」,將分離成電子裝置24與附吸附層之支持基材26之步驟稱為「分離步驟」。 Hereinafter, the step of forming the member 20 for the electronic device will be called a "member forming step", and the step of separating the electronic device 24 and the support base material 26 with the adsorption layer will be called a "separation step".
以下,對於各步驟中所使用之材料及順序進行詳細敍述。 The materials and order used in each step are described in detail below.
(構件形成步驟) (Component formation step)
構件形成步驟係於積層體16之聚醯亞胺膜18上形成電子裝置用構件之步驟。更具體而言,如圖4所示,於聚醯亞胺膜18上(聚醯亞胺膜18之與吸附層14側為相反側之表面上)形成電子裝置用構件20,獲得附電子裝置用構件之積層體22。 The component forming step is a step of forming components for electronic devices on the polyimide film 18 of the laminate 16 . More specifically, as shown in FIG. 4 , the electronic device member 20 is formed on the polyimide film 18 (on the surface of the polyimide film 18 opposite to the adsorption layer 14 side) to obtain an electronic device-attached member. A laminate 22 of components is used.
再者,為了提高電子裝置之可靠性,可於聚醯亞胺膜18上形成障壁層。障壁層之材料無特別限制,可使用公知之材料。作為構成障壁層之材料,例如可例舉氮化矽、氧化矽。又,障壁層可為1層,可為2層以上,亦可組合複數種材料。成膜方法無特別限制,可例舉公知之方法。例如可例舉:電漿CVD(Chemical Vapor Deposition,化學氣相沈積)、濺鍍等方法。 Furthermore, in order to improve the reliability of the electronic device, a barrier layer can be formed on the polyimide film 18 . The material of the barrier layer is not particularly limited, and publicly known materials can be used. Examples of materials constituting the barrier layer include silicon nitride and silicon oxide. In addition, the barrier layer may be one layer, two or more layers, or a plurality of materials may be combined. The film forming method is not particularly limited, and known methods can be exemplified. Examples include plasma CVD (Chemical Vapor Deposition), sputtering and other methods.
首先,對於本步驟中所使用之電子裝置用構件20進行詳細敍述,其後,對於步驟之順序進行詳細敍述。 First, the electronic device member 20 used in this step will be described in detail, and then, the order of the steps will be described in detail.
(電子裝置用構件) (Components for electronic devices)
電子裝置用構件20係構成形成於積層體16之聚醯亞胺膜18上的電子裝置之至少一部分之構件。更具體而言,作為電子裝置用構件20,可例 舉:顯示裝置用面板、太陽電池、薄膜二次電池、或表面形成有電路之半導體晶圓等電子零件、接收感測器面板等所使用之構件(例如,LTPS(Low Temperature Poly Silicon,低溫多晶矽)等顯示裝置用構件、太陽電池用構件、薄膜二次電池用構件、電子零件用電路、接收感測器用構件),例如可例舉:美國專利申請公開第2018/0178492號說明書之段落[0192]所記載之太陽電池用構件、相同說明書之段落[0193]所記載之薄膜二次電池用構件、相同說明書之段落[0194]所記載之電子零件用電路。 The electronic device member 20 is a member constituting at least a part of the electronic device formed on the polyimide film 18 of the laminate 16 . More specifically, the electronic device member 20 may include Examples: display device panels, solar cells, thin film secondary batteries, electronic components such as semiconductor wafers with circuits formed on the surface, and components used in receiving sensor panels (for example, LTPS (Low Temperature Poly Silicon) ) and other components for display devices, components for solar cells, components for thin film secondary batteries, circuits for electronic components, and components for receiving sensors), for example: Paragraph [0192 of the specification of U.S. Patent Application Publication No. 2018/0178492 ], a member for a solar cell described in paragraph [0193] of the same description, a member for a thin film secondary battery described in paragraph [0193] of the same specification, and a circuit for electronic components described in paragraph [0194] of the same specification.
(步驟之順序) (sequence of steps)
上述附電子裝置用構件之積層體22之製造方法無特別限制,根據電子裝置用構件之構成構件之種類,利用先前公知之方法,於積層體16之聚醯亞胺膜18上形成電子裝置用構件20。 The manufacturing method of the above-mentioned laminated body 22 with components for electronic devices is not particularly limited. Depending on the type of the constituent components of the components for electronic devices, a conventionally known method is used to form the laminated body 16 with components for electronic devices on the polyimide film 18 of the laminated body 16 . Component 20.
電子裝置用構件20可為最終形成於聚醯亞胺膜18上之全部構件之一部分(以下,稱為「部分構件」),而不是最終形成於聚醯亞胺膜18上之構件之全部(以下,稱為「全部構件」)。亦可將自吸附層14剝離之附部分構件之基板於其後之步驟中設為附全部構件之基板(相當於下述電子裝置)。 The electronic device member 20 may be a part (hereinafter, referred to as a "partial member") of all the members finally formed on the polyimide film 18, rather than all of the members finally formed on the polyimide film 18. Hereinafter, referred to as "all components"). The substrate with partial components peeled off from the adsorption layer 14 may also be used as a substrate with all components (corresponding to the electronic device described below) in a subsequent step.
亦可於自吸附層14剝離之附全部構件之基板之剝離面形成有其他電子裝置用構件。進而,亦可使2片附電子裝置用構件之積層體22之電子裝置用構件20彼此對向,將兩者貼合而組裝附全部構件之積層體,其後,自附全部構件之積層體剝離2片附吸附層之支持基材,製造電子裝置。 Other electronic device components may also be formed on the peeling surface of the substrate with all components peeled off from the adsorption layer 14 . Furthermore, two electronic device members 20 of the electronic device member-attached laminated body 22 may be made to face each other, and the two may be laminated together to assemble the all-component-attached laminated body, and then the laminated body with all the components may be assembled therefrom. Peel off two pieces of the supporting base material with the adsorption layer to manufacture an electronic device.
例如,若以製造OLED之情形為例,則為了於積層體16之聚醯亞胺膜18之與吸附層14側為相反側之表面上形成有機EL構造體,而進行各種層 形成或處理,如,形成透明電極;進而於形成有透明電極之面上蒸鍍電洞注入層、電洞傳輸層、發光層、電子傳輸層等;形成背面電極;使用密封板密封等。作為該等層形成或處理,具體而言,例如可例舉:成膜處理、蒸鍍處理、密封板之接著處理等。 For example, taking the case of manufacturing OLED, in order to form an organic EL structure on the surface of the polyimide film 18 of the laminate 16 opposite to the adsorption layer 14 side, various layers are performed. Forming or processing, for example, forming a transparent electrode; then evaporating a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, etc. on the surface where the transparent electrode is formed; forming a back electrode; sealing with a sealing plate, etc. Specific examples of such layer formation or processing include film formation processing, vapor deposition processing, sealing plate bonding processing, and the like.
(分離步驟) (separation step)
分離步驟為如下步驟,即,如圖5所示,將吸附層14與聚醯亞胺膜18之界面作為剝離面,由上述構件形成步驟中所獲得之附電子裝置用構件之積層體22,分離成積層有電子裝置用構件20之聚醯亞胺膜18與附吸附層之支持基材26,獲得包含電子裝置用構件20及聚醯亞胺膜18之電子裝置24。 The separation step is a step in which, as shown in FIG. 5 , the interface between the adsorption layer 14 and the polyimide film 18 is used as a peeling surface, and the laminated body 22 with the electronic device member obtained in the above-mentioned member forming step is used. The polyimide film 18 on which the electronic device member 20 is laminated and the supporting base material 26 with the adsorption layer are separated to obtain an electronic device 24 including the electronic device member 20 and the polyimide film 18 .
於所剝離之聚醯亞胺膜18上之電子裝置用構件20為形成所需之全部構成構件之一部分之情形時,亦可於分離後,於聚醯亞胺膜18上形成剩餘之構成構件。 When the electronic device member 20 on the peeled polyimide film 18 forms part of all the required constituent members, the remaining constituent members may also be formed on the polyimide film 18 after separation. .
將聚醯亞胺膜18及吸附層14剝離之方法無特別限制。例如,可將銳利之刃具狀物體插入至聚醯亞胺膜18與支持基材12之界面,形成剝離之起點,其後吹送水與壓縮空氣之混合流體而剝離。 The method of peeling off the polyimide film 18 and the adsorption layer 14 is not particularly limited. For example, a sharp blade-like object can be inserted into the interface between the polyimide film 18 and the supporting base material 12 to form a starting point for peeling, and then a mixed fluid of water and compressed air can be blown to cause peeling.
較佳為,將附電子裝置用構件之積層體22以支持基材12為上側、電子裝置用構件20側為下側之方式設置於壓盤上,將電子裝置用構件20側真空吸附至壓盤上,於該狀態下首先使刃具狀物體侵入至聚醯亞胺膜18與支持基材12之界面。其後,藉由複數個真空吸盤吸附支持基材12側,自 插入有刃具狀物體之位置附近依次使真空吸盤上升。如此,可容易地剝離附吸附層之支持基材26。 Preferably, the laminated body 22 with the electronic device member is placed on the pressure plate with the support base 12 as the upper side and the electronic device member 20 side as the lower side, and the electronic device member 20 side is vacuum-suctioned to the pressure plate. On the disk, in this state, a blade-shaped object is first allowed to invade the interface between the polyimide film 18 and the support base material 12 . Thereafter, a plurality of vacuum suction cups are used to adsorb the supporting substrate 12 side, and then automatically Insert the vacuum suction cup near the position where the blade-like object is inserted. In this way, the support base material 26 with the adsorption layer attached can be easily peeled off.
當自附電子裝置用構件之積層體22分離電子裝置24時,藉由控制利用離子化器所進行之吹送或控制濕度,可進一步抑制吸附層14之碎片靜電吸附於電子裝置24。 When the electronic device 24 is separated from the laminate 22 with the electronic device member attached thereto, by controlling the blowing by the ionizer or controlling the humidity, the electrostatic adsorption of fragments of the adsorption layer 14 to the electronic device 24 can be further suppressed.
上述電子裝置之製造方法適於製造例如美國專利申請公開第2018/0178492號說明書之段落[0210]所記載之顯示裝置,作為電子裝置24,例如可例舉相同說明書之段落[0211]所記載者。 The above-mentioned manufacturing method of an electronic device is suitable for manufacturing a display device described in paragraph [0210] of the specification of US Patent Application Publication No. 2018/0178492. Examples of the electronic device 24 include those described in paragraph [0211] of the same specification. .
又,於實施上述分離步驟前,亦可切斷積層體之未配置電子裝置用構件之區域而將其去除。 Moreover, before performing the said separation process, the area|region of a laminated body where the electronic device member is not arrange|positioned may also be cut and removed.
以下,藉由實施例等,具體地說明本發明,但本發明並不受該等例之限制。 Hereinafter, the present invention will be explained concretely through examples and the like, but the present invention is not limited by these examples.
以下,作為支持基材,使用包含無鹼硼矽酸玻璃之玻璃板(線膨脹係數38×10-7/℃、AGC股份有限公司製造商品名「AN100」)。 Hereinafter, a glass plate containing alkali-free borosilicate glass (linear expansion coefficient: 38×10 -7 /°C, trade name "AN100" manufactured by AGC Co., Ltd.) is used as the supporting base material.
以下,例1~例5為實施例,例6~例7為比較例。 In the following, Examples 1 to 5 are examples, and Examples 6 to 7 are comparative examples.
<外觀評價> <Appearance evaluation>
目測觀察按下述順序所獲得之依次具有玻璃板、矽酮樹脂層及聚醯 亞胺膜的積層體中之聚醯亞胺膜,按照以下之基準進行評價。 Visually observe that the glass plate, silicone resin layer and polyethylene obtained in the following order are: The polyimide film in the imine film laminate was evaluated based on the following criteria.
A:聚醯亞胺膜未發生剝離。 A: The polyimide film did not peel off.
B:雖然聚醯亞胺膜之一部分發生剝離,但為實用上無問題之範圍。 B: Although a part of the polyimide film peeled off, it was within the range of no practical problems.
C:聚醯亞胺膜之大部分或整個面發生剝離,故為實用上有問題之範圍。 C: Most or the entire surface of the polyimide film is peeled off, so this is a problematic area for practical use.
<周緣區域之寬度評價> <Evaluation of width of peripheral area>
按照以下之基準評價支持基材之周緣區域之寬度。 The width of the peripheral area of the support base material was evaluated based on the following criteria.
A:寬度為1mm以上10mm以下 A: Width is 1mm or more and 10mm or less
B:寬度超過10mm且30mm以下 B: Width exceeds 10mm and is less than 30mm
C:寬度超過30mm且未達1mm C: Width exceeds 30mm and less than 1mm
<異物嵌埋性> <Embedding properties of foreign matter>
目測觀察按下述順序所獲得之依次配置有玻璃板、矽酮樹脂層及PET膜之積層體,按照以下之基準進行評價。 The laminated body in which the glass plate, the silicone resin layer and the PET film were arranged in this order, obtained in the following order, were visually observed and evaluated based on the following standards.
A:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡為5個以下。 A: The number of interfacial bubbles caused by foreign matter at the glass plate/silicone resin layer interface is less than 5.
B:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡多於5個,且為10個以下。 B: The number of interfacial bubbles caused by foreign matter at the glass plate/silicone resin layer interface is more than 5 and less than 10.
C:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡多於10個。 C: There are more than 10 interface bubbles caused by foreign matter at the glass plate/silicone resin layer interface.
<例1> <Example 1>
(硬化性矽酮之製備) (Preparation of hardening silicone)
於1L之燒瓶中加入三乙氧基甲基矽烷(179g)、甲苯(300g)、乙酸(5 g),將混合物於25℃下攪拌20分鐘後,進而加熱至60℃,反應12小時。將所獲得之反應粗液冷卻至25℃後,使用水(300g),清洗反應粗液3次。於洗淨之反應粗液中加入氯化三甲基矽烷(70g),將混合物於25℃下攪拌20分鐘後,進而加熱至50℃,反應12小時。將所獲得之反應粗液冷卻至25℃後,使用水(300g),清洗反應粗液3次。自洗淨之反應粗液中減壓蒸餾去除甲苯,製成漿料狀態後,藉由真空乾燥機進行整夜乾燥,藉此獲得白色之有機聚矽氧烷化合物、即硬化性矽酮1。硬化性矽酮1之T單元之個數:M單元之個數=87:13(莫耳比)。再者,M單元意指(R)3SiO1/2所表示之1官能有機矽烷氧基單元。T單元意指RSiO3/2(R表示氫原子或有機基)所表示之3官能有機矽烷氧基單元。 Add triethoxymethylsilane (179g), toluene (300g), and acetic acid (5g) to a 1L flask, stir the mixture at 25°C for 20 minutes, then heat to 60°C and react for 12 hours. After the obtained crude reaction liquid was cooled to 25°C, water (300 g) was used to wash the crude reaction liquid three times. Trimethylsilane chloride (70g) was added to the washed crude reaction liquid, and the mixture was stirred at 25°C for 20 minutes, then heated to 50°C, and reacted for 12 hours. After the obtained crude reaction liquid was cooled to 25°C, water (300 g) was used to wash the crude reaction liquid three times. Toluene was removed by distillation under reduced pressure from the washed reaction crude liquid, and after being made into a slurry state, it was dried overnight in a vacuum dryer to obtain a white organopolysiloxane compound, that is, curable silicone 1. The number of T units in curable silicone 1: the number of M units = 87:13 (mol ratio). In addition, the M unit means a monofunctional organosiloxy unit represented by (R) 3 SiO 1/2 . T unit means a trifunctional organosiloxy unit represented by RSiO 3/2 (R represents a hydrogen atom or an organic group).
(硬化性組合物之製備) (Preparation of hardening composition)
將硬化性矽酮1與庚烷加以混合,進而添加有機鋯系化合物(辛酸鋯化合物)及有機鉍系化合物(2-乙基己酸鉍)。溶劑量以固形物成分濃度成為50質量%之方式進行調整。又,金屬化合物之添加量以金屬元素相對於樹脂100質量份為0.1質量份之方式進行調整。將所獲得之混合液使用孔徑0.45μm之過濾器進行過濾,藉此獲得硬化性組合物。 The curable silicone 1 and heptane were mixed, and an organic zirconium-based compound (zirconium octoate compound) and an organic bismuth-based compound (bismuth 2-ethylhexanoate) were added. The amount of solvent was adjusted so that the solid content concentration became 50% by mass. In addition, the amount of the metal compound added was adjusted so that the metal element was 0.1 parts by mass relative to 100 parts by mass of the resin. The obtained mixed liquid was filtered using a filter with a pore size of 0.45 μm, thereby obtaining a curable composition.
將硬化性矽酮1與庚烷加以混合,進而添加有機鋯系化合物(辛酸鋯化合物)及有機鈰系化合物(2-乙基己酸鈰)。溶劑量以固形物成分濃度成為50質量%之方式進行調整。又,金屬化合物之添加量以金屬元素相對於樹脂100質量份為0.1質量份之方式進行調整。將所獲得之混合液使用孔徑0.45μm之過濾器進行過濾,藉此獲得硬化性組合物。 Curable silicone 1 and heptane were mixed, and an organic zirconium-based compound (zirconium octoate compound) and an organic cerium-based compound (cerium 2-ethylhexanoate) were added. The amount of solvent was adjusted so that the solid content concentration became 50% by mass. In addition, the amount of the metal compound added was adjusted so that the metal element was 0.1 parts by mass relative to 100 parts by mass of the resin. The obtained mixed liquid was filtered using a filter with a pore size of 0.45 μm, thereby obtaining a curable composition.
(積層基板之製作) (Manufacturing of laminated substrates)
於聚對苯二甲酸乙二酯膜(PET膜)(東洋紡公司製造、COSMOSHINE A4100)之表面上塗佈所製備之硬化性組合物,使用加熱板於140℃下加熱10分鐘,藉此形成矽酮樹脂層。矽酮樹脂層之厚度為8μm。 The prepared curable composition was applied to the surface of a polyethylene terephthalate film (PET film) (manufactured by Toyobo Co., Ltd., COSMOSHINE A4100) and heated at 140° C. for 10 minutes using a hot plate to form silicon. Ketone resin layer. The thickness of the silicone resin layer is 8 μm.
繼而,藉由水系玻璃洗淨劑(Parker Corporation股份有限公司製造之「PK-LCG213」)洗淨後,將經純水洗淨之200×200mm、厚度0.5mm之玻璃板「AN100」(支持基材)、與形成有矽酮樹脂層之PET膜進行貼合,製作依次配置有玻璃板、矽酮樹脂層、及PET膜之積層體。再者,於上述貼合時,以玻璃板之表面之周緣區域殘留未配置矽酮樹脂層之區域之方式進行貼合(參照圖2)。周緣區域之寬度W為5mm。 Then, after cleaning with a water-based glass cleaner ("PK-LCG213" manufactured by Parker Corporation), a 200×200mm, 0.5mm-thick glass plate "AN100" (support base) washed with pure water was Material) is laminated to the PET film on which the silicone resin layer is formed, and a laminate is produced in which the glass plate, the silicone resin layer, and the PET film are arranged in this order. Furthermore, during the above-mentioned bonding, the glass plates are bonded together in such a manner that a region in which the silicone resin layer is not arranged remains in the peripheral region of the surface of the glass plate (see FIG. 2 ). The width W of the peripheral area is 5 mm.
其次,將所獲得之積層體配置於高壓釜內,於60℃、1MPa之條件下加熱30分鐘。其後,剝離PET膜,對於包含玻璃板及矽酮樹脂層之積層基板,於250℃下實施30分鐘退火處理後,對矽酮樹脂層實施電暈處理。所獲得之矽酮樹脂層具有玻璃板側之第1主面、與第1主面為相反側之第2主面、及連接第1主面及第2主面之端面,上述端面係自第2主面起,越往第1主面越突出之傾斜面。上述傾斜面與第1主面所成之角度為3°。矽酮樹脂層之第1主面與第2主面之間之厚度為8μm。 Next, the obtained laminated body was placed in an autoclave and heated at 60° C. and 1 MPa for 30 minutes. Thereafter, the PET film was peeled off, and the laminated substrate including the glass plate and the silicone resin layer was annealed at 250° C. for 30 minutes, and then the silicone resin layer was subjected to corona treatment. The obtained silicone resin layer has a first main surface on the glass plate side, a second main surface on the opposite side to the first main surface, and an end surface connecting the first main surface and the second main surface, and the above end surface is from the first main surface. Starting from the 2nd main surface, it is an inclined surface that becomes more prominent toward the 1st main surface. The angle between the above-mentioned inclined surface and the first main surface is 3°. The thickness between the first main surface and the second main surface of the silicone resin layer is 8 μm.
(積層體之製作) (Production of laminated body)
於上述所獲得之積層基板之矽酮樹脂層側之表面塗佈聚醯亞胺清漆(宇部興產公司製造、UPIA-ST-1003),於60℃下加熱30分鐘後,進而於120℃下加熱30分鐘,其後於450℃下加熱10分鐘,獲得依次具有玻璃板、矽酮樹脂層及聚醯亞胺膜(厚度:7μm)之積層體。聚醯亞胺膜配置於 玻璃板之周緣區域上及矽酮樹脂層上(參照圖3)。 Polyimide varnish (UPIA-ST-1003, manufactured by Ube Kosan Co., Ltd.) was applied to the surface of the silicone resin layer side of the laminated substrate obtained above, heated at 60°C for 30 minutes, and then heated at 120°C. Heating for 30 minutes, and then heating at 450° C. for 10 minutes, yielded a laminate having a glass plate, a silicone resin layer, and a polyimide film (thickness: 7 μm) in this order. Polyimide membrane is configured on On the peripheral area of the glass plate and on the silicone resin layer (see Figure 3).
<例2~例14> <Example 2~Example 14>
將矽酮樹脂層之第1主面與第2主面之間之厚度、周緣區域之寬度及角度如下述表1及表2所示進行調整,除此以外,按照與例1相同之順序獲得積層體。表1係使用包含鉍之硬化性組合物之情形,表2係使用包含鈰之硬化性組合物之情形。 Except for adjusting the thickness between the first main surface and the second main surface of the silicone resin layer, the width and angle of the peripheral area as shown in Table 1 and Table 2 below, the same procedure as in Example 1 was obtained. Laminated body. Table 1 shows the case where a curable composition containing bismuth is used, and Table 2 shows a case where a curable composition containing cerium is used.
再者,關於例6及7、及13及14,於玻璃板之整個面塗佈硬化性組合物,將塗膜於250℃下加熱30分鐘使之硬化,於玻璃板之整個面上製作矽酮樹脂層後,切斷所獲得之附矽酮樹脂層之玻璃板之周緣部,獲得具有玻璃板及矽酮樹脂層且具有平滑之側面之積層體(以下,亦稱為「積層體C」),其後使用積層體C實施上述內容(積層體之製作)。即,關於例6及7、及13及14所使用之積層體C,具有矽酮樹脂層之玻璃板側之主面之面積和與玻璃板側為相反側之主面之面積相同、且θ相當於90°之矽酮樹脂層。 Furthermore, regarding Examples 6 and 7, and 13 and 14, a curable composition was applied to the entire surface of the glass plate, the coating film was heated at 250° C. for 30 minutes to cure, and silicon was produced on the entire surface of the glass plate. After the ketone resin layer is formed, the peripheral edge of the obtained glass plate with the silicone resin layer is cut to obtain a laminated body having a glass plate and a silicone resin layer and a smooth side surface (hereinafter also referred to as "laminated body C"). ), and then use the laminated body C to implement the above (preparation of the laminated body). That is, regarding the laminated body C used in Examples 6 and 7, and 13 and 14, the area of the main surface on the glass plate side having the silicone resin layer is the same as the area of the main surface on the opposite side to the glass plate side, and θ Equivalent to 90° silicone resin layer.
表1及表2中,「吸附層厚度(μm)」欄表示矽酮樹脂層之第1主面與第2主面之間之厚度。 In Table 1 and Table 2, the "adsorption layer thickness (μm)" column indicates the thickness between the first main surface and the second main surface of the silicone resin layer.
表1及表2中,「周緣區域寬度(mm)」欄表示周緣區域之寬度(圖2之W)。 In Tables 1 and 2, the column "Width of peripheral area (mm)" indicates the width of the peripheral area (W in Figure 2).
表1及表2中,「角度(°)」欄表示矽酮樹脂層之第1主面與傾斜面所成之角度。角度之測定方法如上所述。 In Table 1 and Table 2, the "angle (°)" column indicates the angle between the first main surface of the silicone resin layer and the inclined surface. The method of measuring the angle is as described above.
如表1及表2所示,本發明之積層基板顯示出所需之效果。 As shown in Table 1 and Table 2, the laminated substrate of the present invention exhibits the desired effects.
尤其是於使用包含鉍之硬化性組合物之情形時,根據例1~3及5與例4之比較,確認到於吸附層之厚度為6μm以上之情形時,異物嵌埋性更加優異。 Particularly when using a curable composition containing bismuth, it was confirmed from the comparison of Examples 1 to 3 and 5 and Example 4 that when the thickness of the adsorption layer is 6 μm or more, the foreign matter embedding property is more excellent.
又,根據例1與3之比較,確認到於吸附層之厚度為12μm以下之情形時,外觀特性更加優異。 Furthermore, from the comparison between Examples 1 and 3, it was confirmed that when the thickness of the adsorption layer is 12 μm or less, the appearance characteristics are more excellent.
於使用包含鈰之硬化性組合物之情形時亦相同,根據例8~10及12與例11之比較,確認到於吸附層之厚度為6μm以上之情形時,異物嵌埋性更加優異。 The same applies to the case of using a curable composition containing cerium. Comparison of Examples 8 to 10 and 12 and Example 11 shows that when the thickness of the adsorption layer is 6 μm or more, the foreign matter embedding property is more excellent.
又,根據例8與10之比較,確認到於吸附層之厚度為12μm以下之情 形時,外觀特性更加優異。 Furthermore, based on the comparison between Examples 8 and 10, it was confirmed that the thickness of the adsorption layer was 12 μm or less. When shaped, the appearance characteristics are more excellent.
<有機EL顯示裝置(相當於電子裝置)之製造> <Manufacturing of organic EL display devices (equivalent to electronic devices)>
使用例1~5、8~12所獲得之積層體,按照以下之順序製造有機EL顯示裝置。 Using the laminated bodies obtained in Examples 1 to 5 and 8 to 12, an organic EL display device was produced according to the following procedure.
首先,於積層基板之聚醯亞胺膜之與玻璃板側為相反側之表面上,藉由電漿CVD法按照氮化矽、氧化矽、非晶矽之順序成膜。其次,藉由離子摻雜裝置,將低濃度之硼注入至非晶矽層,進行加熱處理並進行脫氫處理。其次,藉由雷射退火裝置進行非晶矽層之結晶化處理。其次,藉由使用光微影法之蝕刻及離子摻雜裝置,將低濃度之磷注入至非晶矽層,形成N型及P型之TFT(Thin-Film Transistor,薄膜電晶體)區域。 First, on the surface of the polyimide film of the laminated substrate that is opposite to the glass plate side, a film is formed in the order of silicon nitride, silicon oxide, and amorphous silicon by plasma CVD method. Secondly, low-concentration boron is implanted into the amorphous silicon layer through an ion doping device, and heat treatment and dehydrogenation treatment are performed. Secondly, a laser annealing device is used to crystallize the amorphous silicon layer. Secondly, by using photolithographic etching and ion doping equipment, a low concentration of phosphorus is implanted into the amorphous silicon layer to form N-type and P-type TFT (Thin-Film Transistor, thin film transistor) regions.
其次,於聚醯亞胺膜之與玻璃板側相反一側,藉由電漿CVD法使氧化矽膜成膜而形成閘極絕緣膜,其後利用濺鍍法使鉬成膜,藉由使用光微影法之蝕刻而形成閘極電極。其次,藉由光微影法及離子摻雜裝置,將高濃度之硼及磷注入至N型、P型各自所需之區域,形成源極區域及汲極區域。 Next, on the side of the polyimide film opposite to the glass plate side, a silicon oxide film is formed by a plasma CVD method to form a gate insulating film, and then a molybdenum film is formed by a sputtering method. The gate electrode is formed by photolithographic etching. Secondly, through photolithography and ion doping equipment, high concentrations of boron and phosphorus are implanted into the required regions of the N-type and P-type to form the source region and the drain region.
其次,於聚醯亞胺膜之與玻璃板側相反一側,利用電漿CVD法使氧化矽成膜,藉此形成層間絕緣膜,藉由濺鍍法使鋁成膜並藉由使用光微影法所進行之蝕刻而形成TFT電極。其次,於氫氣氛圍下,進行加熱處理並進行加氫處理後,藉由利用電漿CVD法所進行之氮化矽成膜而形成鈍化層。 Secondly, on the side of the polyimide film opposite to the glass plate side, a silicon oxide film is formed using the plasma CVD method to form an interlayer insulating film, and an aluminum film is formed using a sputtering method and a photomicrograph is used to form a film. The TFT electrode is formed by etching by shadowing method. Next, after heat treatment and hydrogenation in a hydrogen atmosphere, a passivation layer is formed by silicon nitride film formation using a plasma CVD method.
其次,於聚醯亞胺膜之與玻璃板側相反一側塗佈紫外線硬化性樹脂,利用光微影法形成平坦化層及接觸孔。其次,藉由濺鍍法使氧化銦錫 成膜,藉由使用光微影法所進行之蝕刻而形成像素電極。繼而,利用蒸鍍法,於聚醯亞胺膜之與玻璃板側相反一側依次成膜有:作為電洞注入層之4,4',4"-三(3-甲基苯基苯基胺基)三苯胺、作為電洞傳輸層之雙[(N-萘基)-N-苯基]聯苯胺、作為發光層之將2,6-雙[4-[N-(4-甲氧基苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二甲腈(BSN-BCN)以40體積%混合於8-羥基喹啉鋁錯合物(Alq3)中所得者、作為電子傳輸層之Alq3。其次,利用濺鍍法使鋁成膜,藉由使用光微影法所進行之蝕刻而形成對向電極。 Next, ultraviolet curable resin is coated on the side of the polyimide film opposite to the glass plate side, and a planarization layer and contact holes are formed using photolithography. Next, a film of indium tin oxide is formed by sputtering, and the pixel electrode is formed by etching using photolithography. Then, using the evaporation method, a film is sequentially formed on the side of the polyimide film opposite to the glass plate side: 4,4',4"-tris(3-methylphenylphenyl) as the hole injection layer Amino) triphenylamine, bis[(N-naphthyl)-N-phenyl]benzidine as the hole transport layer, 2,6-bis[4-[N-(4-methoxy) as the light-emitting layer phenyl)-N-phenyl]aminostyryl]naphthalene-1,5-dicarbonitrile (BSN-BCN) was mixed in 8-hydroxyquinoline aluminum complex (Alq 3 ) at 40% by volume The result is Alq 3 as an electron transport layer. Next, an aluminum film is formed by a sputtering method, and a counter electrode is formed by etching using a photolithography method.
其次,於聚醯亞胺膜之與玻璃板側相反一側,經由紫外線硬化型接著層貼合另一片玻璃板進行密封。按照上述順序,於聚醯亞胺膜上形成有機EL構造體。聚醯亞胺膜上具有有機EL構造體之構造物(以下,稱為面板A)為附電子裝置用構件之積層體。 Next, another glass plate is bonded to the side of the polyimide film opposite to the glass plate through an ultraviolet curable adhesive layer for sealing. According to the above procedure, an organic EL structure is formed on the polyimide film. The structure having the organic EL structure on the polyimide film (hereinafter referred to as panel A) is a laminate with components for electronic devices.
繼而,使面板A之密封體側真空吸附至壓盤後,將厚度0.1mm之不鏽鋼製刃具插入至面板A之角隅部之聚醯亞胺膜與玻璃板之界面,於聚醯亞胺膜與玻璃板之界面形成剝離之起點。然後,藉由真空吸盤吸附面板A之支持基材表面後,使吸盤上升。此處,一面自離子化器(基恩士公司製造)向該界面吹送去靜電性流體,一面插入刃具。其次,自離子化器繼續向所形成之空隙吹送去靜電性流體,且,一面向剝離前線注水一面提拉真空吸盤。其結果,壓盤上僅殘留形成有有機EL構造體之聚醯亞胺膜,成功將附矽酮樹脂層之支持基材剝離。 Then, after the sealing body side of panel A is vacuum-adsorbed to the pressure plate, a stainless steel cutting tool with a thickness of 0.1 mm is inserted into the interface between the polyimide film and the glass plate at the corner of panel A. The interface with the glass plate forms the starting point for peeling. Then, after adsorbing the surface of the supporting base material of panel A with a vacuum suction cup, the suction cup is raised. Here, the cutting tool is inserted while blowing the electrostatic fluid from the ionizer (made by Keyence Corporation) to the interface. Next, continue to blow the electrostatic fluid from the ionizer into the gap formed, and lift the vacuum suction cup while injecting water toward the peeling front line. As a result, only the polyimide film on which the organic EL structure was formed remained on the platen, and the supporting base material with the silicone resin layer was successfully peeled off.
繼而,使用雷射裁刀或劃線-斷裂法切斷所分離之聚醯亞胺膜,分割成複數個單元後,將形成有有機EL構造體之聚醯亞胺膜與對向基板進行組裝,實施模組形成步驟,製作有機EL顯示裝置。 Then, the separated polyimide film is cut using a laser cutter or a scribing-breaking method, and is divided into a plurality of units. Then, the polyimide film and the counter substrate formed with the organic EL structure are assembled. , implement the module forming steps to produce an organic EL display device.
又,參照特定之實施方式,詳細地說明本發明,但業者清楚,可於不脫離本發明之精神及範圍之情況下進行各種變更或修正。 Furthermore, although the present invention will be described in detail with reference to specific embodiments, it is clear to those skilled in the art that various changes or modifications can be made without departing from the spirit and scope of the present invention.
本申請係基於2020年1月31日提出申請之日本專利申請2020-015418、2020年4月17日提出申請之日本專利申請2020-074048、2020年6月8日提出申請之日本專利申請2020-099427者,其內容係作為參照而併入本說明書中。 This application is based on Japanese Patent Application 2020-015418 filed on January 31, 2020, Japanese Patent Application 2020-074048 filed on April 17, 2020, and Japanese Patent Application 2020- filed on June 8, 2020. 099427, the contents are incorporated into this specification as a reference.
10:積層基板 10:Laminated substrate
12:支持基材 12: Support base material
12a:周緣區域 12a: Peripheral area
14:矽酮樹脂層 14: Silicone resin layer
14a:第1主面 14a: 1st main side
14b:第2主面 14b: 2nd main side
14c:端面 14c: End face
AB:線段 AB: line segment
AC:線段 AC: line segment
θ:角度 θ: angle
Claims (8)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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WO2015133599A1 (en) * | 2014-03-07 | 2015-09-11 | 富士フイルム株式会社 | Decorative material-mounting substrate and manufacturing method therefor, touch panel, information display device |
JP2016111010A (en) * | 2014-12-04 | 2016-06-20 | パナソニックIpマネジメント株式会社 | Method of manufacturing intermediate material of electronic element, electronic element manufacturing method, intermediate material of electronic element and electronic element |
WO2018092688A1 (en) * | 2016-11-15 | 2018-05-24 | 旭硝子株式会社 | Laminated substrate and method for manufacturing electronic device |
JP2018099802A (en) * | 2016-12-20 | 2018-06-28 | 東洋紡株式会社 | Laminate, manufacturing method of laminate, and manufacturing method of flexible device |
WO2019142750A1 (en) * | 2018-01-17 | 2019-07-25 | Agc株式会社 | Laminate, method for manufacturing laminate, and method for manufacturing electronic device |
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WO2015133599A1 (en) * | 2014-03-07 | 2015-09-11 | 富士フイルム株式会社 | Decorative material-mounting substrate and manufacturing method therefor, touch panel, information display device |
JP2016111010A (en) * | 2014-12-04 | 2016-06-20 | パナソニックIpマネジメント株式会社 | Method of manufacturing intermediate material of electronic element, electronic element manufacturing method, intermediate material of electronic element and electronic element |
WO2018092688A1 (en) * | 2016-11-15 | 2018-05-24 | 旭硝子株式会社 | Laminated substrate and method for manufacturing electronic device |
JP2018099802A (en) * | 2016-12-20 | 2018-06-28 | 東洋紡株式会社 | Laminate, manufacturing method of laminate, and manufacturing method of flexible device |
WO2019142750A1 (en) * | 2018-01-17 | 2019-07-25 | Agc株式会社 | Laminate, method for manufacturing laminate, and method for manufacturing electronic device |
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