TW202130501A - Laminated substrate, method for manufacturing laminated body, laminated body, laminated body with components for electronic device, and method for manufacturing electronic device do not easily peel off the formed polyimide film when a polyimide varnish is coated on the surface of the laminated substrate to form a polyimide film - Google Patents

Laminated substrate, method for manufacturing laminated body, laminated body, laminated body with components for electronic device, and method for manufacturing electronic device do not easily peel off the formed polyimide film when a polyimide varnish is coated on the surface of the laminated substrate to form a polyimide film Download PDF

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TW202130501A
TW202130501A TW110103463A TW110103463A TW202130501A TW 202130501 A TW202130501 A TW 202130501A TW 110103463 A TW110103463 A TW 110103463A TW 110103463 A TW110103463 A TW 110103463A TW 202130501 A TW202130501 A TW 202130501A
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adsorption layer
main surface
substrate
polyimide film
electronic device
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TWI820384B (en
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川崎周馬
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日商Agc股份有限公司
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention relates to a laminated substrate, which has a support substrate made of glass and an adsorption layer arranged on the support substrate. The surface of the adsorption layer side of the support substrate has a peripheral area without the adsorption layer. The adsorption layer has a first main surface on the support substrate side, a second main surface on the opposite side of the first main surface, and an end surface connecting the first main surface and the second main surface. The end surface is an inclined surface that further protrudes toward the first main surface from the second main surface, and the angle formed between the inclined surface and the first main surface is less than 10°. Regarding the laminated substrate of the invention, when a polyimide varnish is coated on the surface of the laminated substrate to form a polyimide film, the formed polyimide film is not easily peeled off.

Description

積層基板、積層體之製造方法、積層體、附電子裝置用構件之積層體、電子裝置之製造方法Laminated substrates, methods for manufacturing laminates, laminates, laminates with components for electronic devices, and methods for manufacturing electronic devices

本發明係關於一種積層基板、積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。The present invention relates to a layered substrate, a method of manufacturing a layered body, a layered body, a layered body with components for electronic devices, and a method of manufacturing an electronic device.

太陽電池(PV)、液晶面板(LCD)、有機EL(Electroluminescence,電致發光)面板(OLED)、及感知電磁波、X射線、紫外線、可見光線、紅外線等之接收感測器面板等電子裝置正變得更薄、更輕。伴隨於此,電子裝置所使用之聚醯亞胺樹脂基板等基板亦變得更薄。若因變薄而使基板之強度不足,則存在如下情形,即,基板之操作性降低,於在基板上形成電子裝置用構件之步驟(構件形成步驟)等中會產生問題。Electronic devices such as solar cells (PV), liquid crystal panels (LCD), organic EL (Electroluminescence) panels (OLED), and receiving sensor panels that sense electromagnetic waves, X-rays, ultraviolet rays, visible rays, infrared rays, etc. are working Become thinner and lighter. Along with this, substrates such as polyimide resin substrates used in electronic devices have also become thinner. If the strength of the substrate is insufficient due to the thinning, the operability of the substrate is reduced, which may cause problems in the step of forming electronic device components on the substrate (component forming step).

因此,最近,為了使基板之操作性變得良好,提出一種使用積層體之技術,上述積層體係於支持基材上配置有聚醯亞胺樹脂基板(專利文獻1)。更具體而言,於專利文獻1中揭示有,可於熱硬化性樹脂組合物硬化體層上塗佈聚醯亞胺清漆,形成樹脂清漆硬化膜(相當於聚醯亞胺膜),並於樹脂清漆硬化膜上配置精密元件。 [先前技術文獻] [專利文獻]Therefore, recently, in order to improve the operability of the substrate, a technique using a laminate has been proposed. The above-mentioned laminate system is provided with a polyimide resin substrate on a supporting base material (Patent Document 1). More specifically, it is disclosed in Patent Document 1 that a polyimide varnish can be coated on the cured body layer of a thermosetting resin composition to form a resin varnish cured film (equivalent to a polyimide film), and then apply it to the resin Precision components are arranged on the varnish hardened film. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2018-193544號公報[Patent Document 1] Japanese Patent Laid-Open No. 2018-193544

[發明所欲解決之問題][The problem to be solved by the invention]

另一方面,本發明人實施專利文獻1所記載之塗佈聚醯亞胺清漆製作聚醯亞胺膜之製程,結果發現,當塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,聚醯亞胺膜容易發生剝離。並且發現,尤其容易於聚醯亞胺膜之端部發生剝離。On the other hand, the inventors performed the process of coating polyimide varnish to produce polyimide film described in Patent Document 1. As a result, they found that when polyimide varnish is applied to form a polyimide film, Polyimide film is prone to peeling. It has also been found that peeling occurs particularly easily at the end of the polyimide film.

本發明之課題在於提供一種積層基板,當於其表面上塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,所形成之聚醯亞胺膜不易發生剝離。 本發明之課題亦在於提供一種積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。 [解決問題之技術手段]The subject of the present invention is to provide a multilayer substrate, when a polyimide varnish is coated on the surface to form a polyimide film, the formed polyimide film is not easy to peel off. The subject of the present invention is also to provide a method of manufacturing a laminate, a laminate, a laminate with a member for electronic devices, and a method of manufacturing an electronic device. [Technical means to solve the problem]

本發明人等進行銳意研究,結果發現,可藉由以下之構成解決上述課題。The inventors of the present invention conducted intensive research, and as a result, found that the above-mentioned problem can be solved by the following configuration.

(1)一種積層基板,其具有玻璃製之支持基材、及配置於支持基材上之吸附層, 於支持基材之吸附層側之表面具有未配置吸附層之周緣區域, 吸附層具有支持基材側之第1主面、與第1主面為相反側之第2主面、及連接第1主面與第2主面之端面, 端面為自第2主面起,越往第1主面越突出之傾斜面,且 傾斜面與第1主面所成之角度未達10°。 (2)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為50 μm以下。 (3)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為12 μm以下。 (4)如(1)所記載之積層基板,其中吸附層之第1主面與第2主面之間之厚度為6 μm以上。 (5)如(1)所記載之積層基板,其中傾斜面與第1主面所成之角度為5°以下。 (6)如(1)至(5)中任一項所記載之積層基板,其中周緣區域之寬度為1~30 mm。 (7)如(1)至(6)中任一項所記載之積層基板,其中吸附層為矽酮樹脂層。 (8)如(1)至(7)中任一項所記載之積層基板,其進而具備配置於吸附層上之保護膜。 (9)一種如(1)至(8)中任一項所記載之積層基板之製造方法,其具有:支持基材與轉印膜之貼合步驟,該步驟係於支持基材上貼合具有成為吸附層之前驅物膜之轉印膜,此時將支持基材與轉印膜配置為使得支持基材上具有未配置前驅物膜之周緣區域;及前驅物膜加熱步驟,其用於自前驅物膜獲得吸附層。 (10)一種積層體之製造方法,其於如(1)至(7)中任一項所記載之積層基板之吸附層側塗佈包含聚醯亞胺或其前驅物及溶劑之聚醯亞胺清漆,於周緣區域上及吸附層上形成聚醯亞胺膜,從而形成依次具有支持基材、吸附層、及聚醯亞胺膜之積層體。 (11)一種積層體,其具有:如(1)至(7)中任一項所記載之積層基板;及 聚醯亞胺膜,其配置於積層基板中之周緣區域上及吸附層上。 (12)一種附電子裝置用構件之積層體,其具有:如(11)所記載之積層體;及 電子裝置用構件,其配置於積層體中之聚醯亞胺膜上。 (13)一種電子裝置之製造方法,其包括:構件形成步驟,其於如(11)所記載之積層體之聚醯亞胺膜上形成電子裝置用構件,獲得附電子裝置用構件之積層體;及 分離步驟,其自附電子裝置用構件之積層體獲得具有聚醯亞胺膜及電子裝置用構件之電子裝置。 [發明之效果](1) A laminated substrate having a supporting substrate made of glass and an adsorption layer arranged on the supporting substrate, On the surface of the support substrate on the side of the adsorption layer, there is a peripheral area where the adsorption layer is not arranged, The adsorption layer has a first main surface on the side of the support substrate, a second main surface on the opposite side to the first main surface, and an end surface connecting the first main surface and the second main surface, The end surface is an inclined surface that protrudes from the second main surface to the first main surface, and The angle between the inclined surface and the first main surface is less than 10°. (2) The multilayer substrate as described in (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is 50 μm or less. (3) The laminated substrate according to (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is 12 μm or less. (4) The multilayer substrate as described in (1), wherein the thickness between the first main surface and the second main surface of the adsorption layer is 6 μm or more. (5) The multilayer substrate as described in (1), wherein the angle formed by the inclined surface and the first main surface is 5° or less. (6) The multilayer substrate as described in any one of (1) to (5), wherein the width of the peripheral region is 1-30 mm. (7) The multilayer substrate according to any one of (1) to (6), wherein the adsorption layer is a silicone resin layer. (8) The multilayer substrate as described in any one of (1) to (7), which further includes a protective film arranged on the adsorption layer. (9) A method for manufacturing a multilayer substrate as described in any one of (1) to (8), which has: a step of bonding a support base material and a transfer film, and this step is laminating on the support base material A transfer film with a precursor film that becomes an adsorption layer, at this time the support substrate and the transfer film are arranged so that there is a peripheral area on the support substrate where the precursor film is not arranged; and the precursor film heating step, which is used for The adsorption layer is obtained from the precursor film. (10) A method for manufacturing a laminate, which coats the adsorption layer side of the laminate substrate as described in any one of (1) to (7) with a polyimide containing polyimide or its precursor and a solvent In the amine varnish, a polyimide film is formed on the peripheral area and on the adsorption layer, thereby forming a laminate with a supporting substrate, an adsorption layer, and a polyimide film in sequence. (11) A laminated body having: the laminated substrate as described in any one of (1) to (7); and The polyimide film is arranged on the peripheral area of the laminated substrate and on the adsorption layer. (12) A laminated body with components for electronic devices, which has: the laminated body as described in (11); and The electronic device component is arranged on the polyimide film in the laminate. (13) A method of manufacturing an electronic device, comprising: a member forming step of forming a member for an electronic device on the polyimide film of the laminate as described in (11) to obtain a laminate with the member for an electronic device ;and In the separation step, an electronic device having a polyimide film and a member for an electronic device is obtained from a laminate with a member for an electronic device. [Effects of Invention]

根據本發明,可提供一種積層基板,當於其表面上塗佈聚醯亞胺清漆而形成聚醯亞胺膜時,所形成之聚醯亞胺膜不易發生剝離。 根據本發明,可提供一種積層體之製造方法、積層體、附電子裝置用構件之積層體、及電子裝置之製造方法。According to the present invention, it is possible to provide a laminated substrate. When a polyimide varnish is coated on the surface to form a polyimide film, the formed polyimide film is not easy to peel off. According to the present invention, it is possible to provide a method of manufacturing a laminate, a laminate, a laminate with a member for electronic devices, and a method of manufacturing an electronic device.

以下,參照圖式對本發明之實施方式進行說明。但,以下之實施方式僅為用於說明本發明而例示者,本發明並不限制於以下所示之實施方式。再者,可於不脫離本發明之範圍之情況下,於以下之實施方式中進行各種變化及置換。 使用「~」表示之數值範圍意指包含「~」之前後所記載之數值作為下限值及上限值之範圍。Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the following embodiments are merely examples for explaining the present invention, and the present invention is not limited to the embodiments shown below. Furthermore, various changes and substitutions can be made in the following embodiments without departing from the scope of the present invention. The numerical range indicated by "~" means the range that includes the numerical value described before and after "~" as the lower limit and upper limit.

作為本發明之積層基板之特徵點,可例舉:將吸附層之端面設為傾斜面;將傾斜面之傾斜角度調整至特定之範圍;及於支持基材之表面設置有未配置吸附層之周緣區域。 本發明人發現,藉由採用如上所述之構成,可獲得所需之效果。獲得所需效果之詳情並不明瞭,但認為,首先,於支持基材之表面設置周緣區域,以該周緣區域與聚醯亞胺膜相接之方式將聚醯亞胺膜配置於積層基板上,藉此,基於聚醯亞胺膜與玻璃製支持基材之相互作用,聚醯亞胺膜與端部之剝離受到抑制。又認為,藉由將具有特定之傾斜角度之傾斜面設置於端部,可抑制於聚醯亞胺膜與吸附層及支持基材之間產生空隙等,其結果,聚醯亞胺膜之剝離受到抑制。As the characteristic points of the laminated substrate of the present invention, for example: the end surface of the adsorption layer is set as an inclined surface; the inclination angle of the inclined surface is adjusted to a specific range; Peripheral area. The inventors found that by adopting the above-mentioned configuration, the desired effect can be obtained. The details of obtaining the desired effect are not clear, but it is thought that firstly, a peripheral area is provided on the surface of the supporting substrate, and the polyimide film is arranged on the build-up substrate in such a way that the peripheral area is in contact with the polyimide film As a result, based on the interaction between the polyimide film and the glass supporting substrate, the peeling of the polyimide film from the end is suppressed. It is also believed that by providing the inclined surface with a specific inclination angle at the end, the generation of voids between the polyimide film and the adsorption layer and the supporting substrate can be suppressed. As a result, the peeling of the polyimide film Be suppressed.

<積層基板> 圖1係模式性地表示本發明之積層基板之一實施方式之剖視圖。圖2係圖1所示之積層基板之俯視圖。 積層基板10具備玻璃製之支持基材12、及配置於支持基材12上之吸附層14。 如圖1及圖2所示,吸附層14具有支持基材12側之第1主面14a、與第1主面14a為相反側之第2主面14b、及連接第1主面14a與第2主面14b之端面14c。 吸附層14之端面14c係自第2主面14b向第1主面14a突出之傾斜面。再者,吸附層14之形狀(主面之形狀)為矩形狀,4個端面14c全部為傾斜面。 又,如圖1及圖2所示,於支持基材12之吸附層14側之表面具有未配置吸附層14之周緣區域12a。換言之,吸附層14以於支持基材12殘留不與吸附層14接觸之邊緣狀之區域(周緣區域12a)之方式配置於支持基材12上。 於如上所述之態樣中,吸附層14之配置區域之面積窄於支持基材12之表面(主面)之面積,上述周緣區域12a相當於較支持基材12之外周緣位於更靠內側之區域。 再者,於圖1及圖2中,支持基材12之形狀(主面之形狀)及吸附層14之形狀(主面之形狀)均為矩形狀,以構成支持基材12之外周緣之一邊與構成吸附層14之外周緣之一邊平行之方式於支持基材12上配置有吸附層14。<Multilayer substrates> Fig. 1 is a cross-sectional view schematically showing an embodiment of the multilayer substrate of the present invention. FIG. 2 is a top view of the multilayer substrate shown in FIG. 1. FIG. The laminated substrate 10 includes a supporting base 12 made of glass and an adsorption layer 14 arranged on the supporting base 12. As shown in Figures 1 and 2, the adsorption layer 14 has a first main surface 14a on the side of the support base 12, a second main surface 14b on the opposite side to the first main surface 14a, and a connection between the first main surface 14a and the first main surface 14a. 2 End surface 14c of main surface 14b. The end surface 14c of the adsorption layer 14 is an inclined surface protruding from the second main surface 14b to the first main surface 14a. In addition, the shape of the adsorption layer 14 (the shape of the main surface) is rectangular, and all the four end surfaces 14c are inclined surfaces. Moreover, as shown in FIGS. 1 and 2, the surface of the support base 12 on the side of the adsorption layer 14 has a peripheral region 12 a where the adsorption layer 14 is not arranged. In other words, the adsorption layer 14 is disposed on the support base 12 in such a way that a marginal area (peripheral region 12a) that does not contact the adsorption layer 14 remains on the support base 12. In the above-mentioned aspect, the area of the disposition area of the adsorption layer 14 is narrower than the area of the surface (main surface) of the support substrate 12. The above-mentioned peripheral area 12a is equivalent to being located more inside than the outer periphery of the support substrate 12.的区。 The area. Furthermore, in FIGS. 1 and 2, the shape of the support substrate 12 (the shape of the main surface) and the shape of the adsorption layer 14 (the shape of the main surface) are both rectangular to form the outer periphery of the support substrate 12 The adsorption layer 14 is arranged on the support base 12 so as to be parallel to one side of the outer periphery of the adsorption layer 14.

於積層基板10之支持基材12之周緣區域上、及吸附層14之第2主面14b上塗佈聚醯亞胺清漆,其後,形成聚醯亞胺膜,下文中將詳細敍述。於該聚醯亞胺膜上形成電子裝置用構件,其後,對形成有電子裝置用構件之聚醯亞胺膜(即,電子裝置)進行分離。如此,製造電子裝置。 以下,對於構成積層基板10之各層(支持基材12、吸附層14)進行詳細敍述,其後,對於積層基板10之製造方法進行詳細敍述。A polyimide varnish is coated on the peripheral area of the support base 12 of the laminated substrate 10 and the second main surface 14b of the adsorption layer 14, and then a polyimide film is formed, which will be described in detail below. A member for an electronic device is formed on the polyimide film, and thereafter, the polyimide film (that is, an electronic device) on which the member for an electronic device is formed is separated. In this way, an electronic device is manufactured. Hereinafter, each layer (support base 12, adsorption layer 14) constituting the multilayer substrate 10 will be described in detail, and thereafter, a method of manufacturing the multilayer substrate 10 will be described in detail.

(支持基材) 支持基材12係支持並補強聚醯亞胺膜之構件,例如為玻璃板。 作為玻璃之種類,較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高二氧化矽玻璃、以其他氧化矽為主要成分之氧化物系玻璃。作為氧化物系玻璃,較佳為由氧化物換算所得之氧化矽之含量為40~90質量%之玻璃。 作為玻璃板,更具體而言,可例舉:包含無鹼硼矽酸玻璃之玻璃板(AGC股份有限公司製造之商品名「AN100」、「AN Wizus」)等。 關於玻璃板之製造方法,通常可使玻璃原料熔融,使熔融玻璃成形成板狀而獲得。此種成形方法可為通常方法,例如可例舉:浮式法、熔融法、流孔下引法。(Support base material) The supporting substrate 12 is a member that supports and reinforces the polyimide film, such as a glass plate. The type of glass is preferably alkali-free borosilicate glass, borosilicate glass, soda lime glass, high silica glass, and oxide-based glass mainly composed of other silica. As the oxide-based glass, a glass in which the content of silicon oxide in terms of oxide is 40 to 90% by mass is preferred. As the glass plate, more specifically, a glass plate containing alkali-free borosilicate glass (trade names "AN100" and "AN Wizus" manufactured by AGC Co., Ltd.) and the like can be mentioned. Regarding the manufacturing method of the glass plate, it is usually obtained by melting the glass raw material and forming the molten glass into a plate shape. Such a forming method may be a common method, for example, a float method, a melting method, and a flow hole down-drawing method may be mentioned.

支持基材12之形狀(主面之形狀)無特別限制,較佳為矩形狀。The shape of the supporting substrate 12 (the shape of the main surface) is not particularly limited, but a rectangular shape is preferable.

如上所述,於支持基材12表面之周緣區域12a上未配置吸附層14。即,支持基材12之周緣區域12a之表面露出。 周緣區域12a之寬度W無特別限制,較佳為1~30 mm,更佳為3~10 mm。如圖2所示,所謂周緣區域12a之寬度W相當於自支持基材12之外周緣至吸附層14之外周緣為止之距離。 只要周緣區域12a之寬度為30 mm以下,則形成下述電子裝置時之有效面積變得更大,從而提高電子裝置之製作效率。又,藉由使周緣區域12a之寬度為1 mm以上,聚醯亞胺膜變得更難發生剝離。As described above, the adsorption layer 14 is not disposed on the peripheral area 12a of the surface of the support substrate 12. That is, the surface of the peripheral region 12a of the support base 12 is exposed. The width W of the peripheral region 12a is not particularly limited, and is preferably 1-30 mm, more preferably 3-10 mm. As shown in FIG. 2, the width W of the so-called peripheral region 12 a corresponds to the distance from the outer periphery of the support base 12 to the outer periphery of the adsorption layer 14. As long as the width of the peripheral region 12a is 30 mm or less, the effective area when forming the electronic device described below becomes larger, thereby improving the manufacturing efficiency of the electronic device. In addition, by making the width of the peripheral region 12a 1 mm or more, the polyimide film becomes more difficult to peel off.

支持基材12較佳為可撓性低。因此,支持基材12之厚度較佳為0.3 mm以上,更佳為0.5 mm以上。 另一方面,支持基材12之厚度較佳為1.0 mm以下。The supporting substrate 12 is preferably low in flexibility. Therefore, the thickness of the supporting substrate 12 is preferably 0.3 mm or more, more preferably 0.5 mm or more. On the other hand, the thickness of the support base 12 is preferably 1.0 mm or less.

(吸附層) 吸附層14係用於防止配置於其上之聚醯亞胺膜發生剝離之膜。 吸附層14以於支持基材12殘留不與吸附層14接觸之周緣區域12a之方式配置於支持基材12上。(Adsorption layer) The adsorption layer 14 is a film used to prevent peeling of the polyimide film disposed thereon. The adsorption layer 14 is disposed on the support substrate 12 in such a manner that the peripheral region 12 a that does not contact the adsorption layer 14 remains on the support substrate 12.

如上所述,吸附層14之端面14c係自第2主面14b向第1主面14a突出之傾斜面。較佳為複數個端面14c全部為傾斜面。As described above, the end surface 14c of the adsorption layer 14 is an inclined surface protruding from the second main surface 14b to the first main surface 14a. Preferably, all of the plurality of end surfaces 14c are inclined surfaces.

於吸附層14中,傾斜面與第1主面14a所成之角度θ未達10°。其中,要想於塗佈聚醯亞胺清漆而形成聚醯亞胺膜時更加抑制聚醯亞胺膜發生剝離,角度θ較佳為8°以下,更佳為5°以下。下限無特別限制,較佳為1°以上。 吸附層14中之傾斜面與第1主面14a所成之角度θ係使用三鷹光器股份有限公司製造之非接觸表面性狀測定裝置「PF-60」,根據吸附層14之剖面形狀而求取。更詳細而言,如圖1所示,根據吸附層14之剖視圖,測定線段AB之長度及線段AC之長度,根據下述式計算角度θ。 θ=arctan(AC/AB)In the adsorption layer 14, the angle θ formed by the inclined surface and the first main surface 14a is less than 10°. Among them, in order to further suppress the peeling of the polyimide film when the polyimide varnish is applied to form the polyimide film, the angle θ is preferably 8° or less, more preferably 5° or less. The lower limit is not particularly limited, but it is preferably 1° or more. The angle θ between the inclined surface of the adsorption layer 14 and the first main surface 14a is determined by the cross-sectional shape of the adsorption layer 14 using a non-contact surface property measuring device "PF-60" manufactured by Mitaka Optical Instruments Co., Ltd. . In more detail, as shown in FIG. 1, the length of the line segment AB and the length of the line segment AC are measured based on the cross-sectional view of the adsorption layer 14, and the angle θ is calculated according to the following formula. θ=arctan(AC/AB)

吸附層14可為有機層,亦可為無機層。 作為有機層之材質,例如可例舉:丙烯酸樹脂、聚烯烴樹脂、聚胺基甲酸酯樹脂、聚醯亞胺樹脂、矽酮樹脂、聚醯亞胺矽酮樹脂、氟樹脂。又,亦可將若干種類之樹脂加以混合而構成吸附層14。 作為無機層之材質,例如可例舉:氧化物、氮化物、氮氧化物、碳化物、碳氮化物、矽化物、氟化物。作為氧化物(較佳為金屬氧化物)、氮化物(較佳為金屬氮化物)、氮氧化物(較佳為金屬氮氧化物),例如可例舉:選自Si、Hf、Zr、Ta、Ti、Y、Nb、Na、Co、Al、Zn、Pb、Mg、Bi、La、Ce、Pr、Sm、Eu、Gd、Dy、Er、Sr、Sn、In及Ba之1種以上之元素之氧化物、氮化物、氮氧化物。 作為碳化物(較佳為金屬碳化物)、碳氮化物(較佳為金屬碳氮化物),例如可例舉:選自Ti、W、Si、Zr及Nb之1種以上之元素之碳化物、碳氮化物、碳氧化物。 作為矽化物(較佳為金屬矽化物),例如可例舉:選自Mo、W及Cr之1種以上之元素之矽化物。 作為氟化物(較佳為金屬氟化物),例如可例舉:選自Mg、Y、La及Ba之1種以上之元素之氟化物。The adsorption layer 14 may be an organic layer or an inorganic layer. As the material of the organic layer, for example, acrylic resin, polyolefin resin, polyurethane resin, polyimide resin, silicone resin, polyimide silicone resin, and fluororesin may be mentioned. In addition, several types of resins may be mixed to form the adsorption layer 14. Examples of the material of the inorganic layer include oxides, nitrides, oxynitrides, carbides, carbonitrides, silicides, and fluorides. As oxides (preferably metal oxides), nitrides (preferably metal nitrides), oxynitrides (preferably metal oxynitrides), for example, one may cite: selected from Si, Hf, Zr, Ta More than one element of, Ti, Y, Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, Pr, Sm, Eu, Gd, Dy, Er, Sr, Sn, In and Ba The oxide, nitride, oxynitride. As carbides (preferably metal carbides) and carbonitrides (preferably metal carbonitrides), for example: carbides of one or more elements selected from Ti, W, Si, Zr and Nb , Carbonitride, Carbon oxide. As the silicide (preferably metal silicide), for example, a silicide of one or more elements selected from Mo, W, and Cr can be mentioned. As the fluoride (preferably a metal fluoride), for example, a fluoride of one or more elements selected from Mg, Y, La, and Ba can be mentioned.

吸附層14亦可為電漿聚合膜。 於吸附層14為電漿聚合膜之情形時,作為形成電漿聚合膜之材料,可例舉:CF4 、CHF3 、C2 H6 、C3 H6 、C2 H2 、CH3 F、C4 H8 等氟碳單體;甲烷、乙烷、丙烷、乙烯、丙烯、乙炔、苯、甲苯等碳氫單體;氫、SF6 等。The adsorption layer 14 may also be a plasma polymerized membrane. When the adsorption layer 14 is a plasma polymerized membrane, the material for forming the plasma polymerized membrane can be exemplified: CF 4 , CHF 3 , C 2 H 6 , C 3 H 6 , C 2 H 2 , CH 3 F , C 4 H 8 and other fluorocarbon monomers; methane, ethane, propane, ethylene, propylene, acetylene, benzene, toluene and other hydrocarbon monomers; hydrogen, SF 6 and so on.

其中,就耐熱性或剝離性之方面而言,作為吸附層14之材質,較佳為矽酮樹脂、聚醯亞胺矽酮樹脂,更佳為矽酮樹脂,尤佳為由縮合反應型矽酮所形成之矽酮樹脂。 以下,對於吸附層為矽酮樹脂層之形態進行詳細敍述。Among them, in terms of heat resistance or peelability, the material of the adsorption layer 14 is preferably silicone resin, polyimide silicone resin, more preferably silicone resin, and particularly preferably condensation reaction type silicone A silicone resin formed by ketones. Hereinafter, the form in which the adsorption layer is a silicone resin layer will be described in detail.

所謂矽酮樹脂係包含特定之有機矽氧烷單元之樹脂,通常使硬化性矽酮硬化而獲得。硬化性矽酮根據其硬化機制而分類成加成反應型矽酮、縮合反應型矽酮、紫外線硬化型矽酮及電子束硬化型矽酮,該等均可使用。其中,較佳為縮合反應型矽酮。 作為縮合反應型矽酮,可較佳地使用作為單體之水解性有機矽烷化合物或其混合物(單體混合物)、或者使單體或單體混合物發生部分水解縮合反應而獲得之部分水解縮合物(有機聚矽氧烷)。 藉由使用該縮合反應型矽酮,進行水解-縮合反應(溶膠凝膠反應),可形成矽酮樹脂。The so-called silicone resin is a resin containing a specific organosiloxane unit, and is usually obtained by curing a curable silicone. Curable silicones are classified into addition reaction type silicones, condensation reaction type silicones, ultraviolet curing type silicones, and electron beam curing type silicones according to their curing mechanism. All of them can be used. Among them, condensation reaction type silicones are preferred. As the condensation reaction type silicone, a hydrolyzable organosilane compound or a mixture (monomer mixture) as a monomer, or a partial hydrolysis condensation product obtained by partial hydrolysis and condensation reaction of the monomer or monomer mixture can be preferably used (Organic Polysiloxane). By using this condensation reaction type silicone, a hydrolysis-condensation reaction (sol-gel reaction) is performed to form a silicone resin.

吸附層14較佳為使用包含硬化性矽酮之硬化性組合物而形成。 硬化性組合物除了包含硬化性矽酮以外,亦可包含溶劑、鉑觸媒(使用加成反應型矽酮作為硬化性矽酮之情形)、調平劑、金屬化合物等。作為金屬化合物中所含之金屬元素,例如可例舉:3d過渡金屬、4d過渡金屬、鑭系元素系金屬、鉍(Bi)、鋁(Al)、錫(Sn)。金屬化合物之含量無特別限制,可適當調整。The adsorption layer 14 is preferably formed using a curable composition containing curable silicone. In addition to the curable silicone, the curable composition may also include a solvent, a platinum catalyst (in the case of using an addition reaction type silicone as the curable silicone), a leveling agent, a metal compound, and the like. Examples of the metal element contained in the metal compound include 3d transition metals, 4d transition metals, lanthanide series metals, bismuth (Bi), aluminum (Al), and tin (Sn). The content of the metal compound is not particularly limited and can be adjusted appropriately.

吸附層14較佳為具有羥基。構成吸附層14之矽酮樹脂之Si-O-Si鍵之一部分被切斷,而可出現羥基。又,於使用縮合反應型矽酮之情形時,其羥基能夠成為吸附層14之羥基。The adsorption layer 14 preferably has a hydroxyl group. A part of the Si-O-Si bond of the silicone resin constituting the adsorption layer 14 is cut, and hydroxyl groups may appear. In addition, when a condensation reaction type silicone is used, its hydroxyl group can become the hydroxyl group of the adsorption layer 14.

吸附層14之第1主面14a與第2主面14b之間之厚度較佳為50 μm以下,更佳為30 μm以下,進而較佳為12 μm以下。另一方面,吸附層14之厚度較佳為超過1 μm,要想使異物嵌埋性更加優異,更佳為6 μm以上。上述厚度係藉由接觸式膜厚測定裝置測定5點以上之任意位置之吸附層14之厚度,並將其等進行算術平均而得之值。 再者,所謂異物嵌埋性優異意指,即便於支持基材12與吸附層14之間具有異物,異物亦會被吸附層14嵌埋。若異物之嵌埋性優異,則吸附層不易產生由異物引起之凸部,當於聚醯亞胺膜上形成電子裝置用構件時,可抑制由凸部所引起之電子裝置用構件中之斷線等風險。再者,由於產生上述凸部時所形成之空隙係以氣泡之形式被觀察到,故而可藉由有無產生氣泡來評價異物嵌埋性。The thickness between the first main surface 14a and the second main surface 14b of the adsorption layer 14 is preferably 50 μm or less, more preferably 30 μm or less, and still more preferably 12 μm or less. On the other hand, the thickness of the adsorption layer 14 is preferably more than 1 μm, and it is more preferably 6 μm or more in order to make the embedding property of foreign matter more excellent. The above-mentioned thickness is a value obtained by measuring the thickness of the adsorption layer 14 at any position above 5 points by a contact-type film thickness measuring device, and arithmetically averaging them. Furthermore, the so-called excellent foreign matter embedding property means that even if there is a foreign matter between the support base 12 and the adsorption layer 14, the foreign matter will be embedded in the adsorption layer 14. If the embedding of foreign matter is excellent, the adsorption layer will not easily produce convex parts caused by the foreign matter. When the electronic device component is formed on the polyimide film, the breakage of the electronic device component caused by the convex part can be suppressed. Line and other risks. Furthermore, since the voids formed when the above-mentioned protrusions are generated are observed in the form of bubbles, the embedding of foreign objects can be evaluated by the presence or absence of bubbles.

若於玻璃製之支持基材12上形成聚醯亞胺膜,並進行高溫熱處理,則聚醯亞胺膜發生黃變,故而難以應用於透明之電子裝置。然而,其機制雖並不明確,但藉由在玻璃上形成吸附層14,於吸附層14上形成聚醯亞胺膜,可抑制由高溫熱處理所導致之聚醯亞胺膜之黃變。If a polyimide film is formed on a supporting substrate 12 made of glass and subjected to high temperature heat treatment, the polyimide film will turn yellow, so it is difficult to apply to transparent electronic devices. However, although the mechanism is not clear, by forming the adsorption layer 14 on the glass and forming the polyimide film on the adsorption layer 14, the yellowing of the polyimide film caused by the high-temperature heat treatment can be suppressed.

(保護膜) 積層基板10亦可具有以覆蓋吸附層14之方式配置之保護膜。保護膜係在將下述聚醯亞胺清漆塗佈於吸附層14上之前保護吸附層14之表面的膜。(Protective film) The build-up substrate 10 may also have a protective film arranged to cover the adsorption layer 14. The protective film is a film that protects the surface of the adsorption layer 14 before applying the following polyimide varnish on the adsorption layer 14.

作為構成保護膜之材料,例如可例舉:聚醯亞胺樹脂、聚酯樹脂(例如,聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯)、聚烯烴樹脂(例如,聚乙烯、聚丙烯)、聚胺基甲酸酯樹脂。其中,較佳為聚酯樹脂,更佳為聚對苯二甲酸乙二酯。As the material constituting the protective film, for example, polyimide resin, polyester resin (for example, polyethylene terephthalate (PET), polyethylene naphthalate), polyolefin resin (for example, , Polyethylene, polypropylene), polyurethane resin. Among them, polyester resin is preferred, and polyethylene terephthalate is more preferred.

為了減少自外部所受到之力之影響,保護膜之厚度較佳為20 μm以上,更佳為30 μm以上,進而較佳為50 μm以上。作為保護膜之厚度之上限值,較佳為500 μm以下,更佳為300 μm以下,進而較佳為100 μm以下。In order to reduce the influence of the force received from the outside, the thickness of the protective film is preferably 20 μm or more, more preferably 30 μm or more, and still more preferably 50 μm or more. The upper limit of the thickness of the protective film is preferably 500 μm or less, more preferably 300 μm or less, and still more preferably 100 μm or less.

保護膜亦可於吸附層14側之表面進而具有密接層。 作為密接層,可使用公知之黏著層。作為構成黏著層之黏著劑,例如可例舉:(甲基)丙烯酸系黏著劑、矽酮系黏著劑、聚胺基甲酸酯系黏著劑。 又,密接層亦可由樹脂構成,作為樹脂,例如可例舉:乙酸乙烯酯樹脂、乙烯-乙酸乙烯酯共聚物樹脂、氯乙烯-乙酸乙烯酯共聚樹脂、(甲基)丙烯酸樹脂、丁醛樹脂、聚胺基甲酸酯樹脂、聚苯乙烯彈性體。 為了於剝離保護膜時減少剝離力,保護膜之表面粗糙度(Ra)較佳為50 nm以下,更佳為30 nm以下,進而較佳為15 nm以下。又,為了可維持保護膜與吸附層密接之狀態,Ra較佳為0.1 nm以上,更佳為0.5 nm以上。表面粗糙度(Ra)係使用Ryoka Systems公司製造之非接觸表面-層剖面形狀計測系統「Vertscan R3300-lite」進行測定。The protective film may further have an adhesive layer on the surface on the side of the adsorption layer 14. As the adhesive layer, a well-known adhesive layer can be used. Examples of the adhesive constituting the adhesive layer include (meth)acrylic adhesives, silicone adhesives, and polyurethane adhesives. In addition, the adhesion layer may be made of resin. Examples of the resin include vinyl acetate resin, ethylene-vinyl acetate copolymer resin, vinyl chloride-vinyl acetate copolymer resin, (meth)acrylic resin, and butyral resin. , Polyurethane resin, polystyrene elastomer. In order to reduce the peeling force when the protective film is peeled off, the surface roughness (Ra) of the protective film is preferably 50 nm or less, more preferably 30 nm or less, and still more preferably 15 nm or less. In addition, in order to maintain a state in which the protective film and the adsorption layer are in close contact, Ra is preferably 0.1 nm or more, and more preferably 0.5 nm or more. The surface roughness (Ra) was measured using a non-contact surface-layer profile measurement system "Vertscan R3300-lite" manufactured by Ryoka Systems.

<積層基板之製造方法> 積層基板之製造方法無特別限制,可例舉公知之方法。 其中,要想生產性更加優異,可例舉如下方法,即,準備具有臨時支持體及配置於臨時支持體上且加熱處理後成為吸附層之前驅物膜的轉印膜,將轉印膜中之前驅物膜貼合於玻璃製之支持基材上之特定位置,對於所獲得之具有玻璃製之支持基材、前驅物膜及臨時支持體之積層體實施加熱處理。藉由實施加熱處理,可使前驅物膜之端部流化,形成上述具有特定之傾斜面之吸附層。再者,當將前驅物膜貼合於支持基材上時,以形成上述周緣區域之方式將前驅物膜貼合於支持基材上。 又,除上述以外,亦可藉由塗佈而將加熱處理後成為吸附層之前驅物膜配置於玻璃製支持基材之特定位置,實施加熱處理,藉此形成上述具有特定之傾斜面之吸附層。 作為上述前驅物膜,例如可例舉:對塗佈包含硬化性矽酮之硬化性組合物所形成之塗膜實施加熱處理而形成之膜。作為塗膜之加熱處理之加熱溫度,較佳為50~200℃,作為加熱時間,較佳為5~20分鐘。<Manufacturing method of multilayer substrate> The manufacturing method of the laminated board is not specifically limited, A well-known method can be mentioned. Among them, in order to be more excellent in productivity, the following method can be exemplified. That is, prepare a transfer film that has a temporary support and is arranged on the temporary support and becomes a precursor film for the adsorption layer after heat treatment. The precursor film is attached to a specific position on the glass supporting substrate, and the obtained laminate having the glass supporting substrate, the precursor film and the temporary support is subjected to heat treatment. By applying heat treatment, the end of the precursor film can be fluidized to form the above-mentioned adsorption layer with a specific inclined surface. Furthermore, when the precursor film is attached to the supporting substrate, the precursor film is attached to the supporting substrate in such a way that the aforementioned peripheral region is formed. Moreover, in addition to the above, the precursor film that becomes the adsorption layer after the heat treatment can be arranged at a specific position of the glass support substrate by coating, and the heat treatment is performed to form the adsorption with the specific inclined surface. Floor. As the precursor film, for example, a film formed by applying a heat treatment to a coating film formed by applying a curable composition containing curable silicone can be exemplified. The heating temperature of the heat treatment of the coating film is preferably 50 to 200°C, and the heating time is preferably 5 to 20 minutes.

如上所述,藉由對前驅物膜實施加熱處理,可使吸附層之端面形狀成為傾斜面。再者,加熱處理時,較佳為一面施加壓力一面實施。具體而言,較佳為使用高壓釜實施加熱處理及加壓處理。 作為加熱處理時之加熱溫度,較佳為50~350℃,更佳為55~300℃,進而較佳為60~250℃。作為加熱時間,較佳為10~60分鐘,更佳為20~40分鐘。 作為加壓處理時之壓力,較佳為0.5~1.5 MPa,更佳為0.8~1.0 MPa。As described above, by applying heat treatment to the precursor film, the shape of the end surface of the adsorption layer can be inclined. Furthermore, it is preferable to perform the heat treatment while applying pressure. Specifically, it is preferable to perform heat treatment and pressure treatment using an autoclave. The heating temperature during the heat treatment is preferably 50 to 350°C, more preferably 55 to 300°C, and still more preferably 60 to 250°C. The heating time is preferably 10 to 60 minutes, more preferably 20 to 40 minutes. As the pressure during the pressurization treatment, it is preferably 0.5 to 1.5 MPa, more preferably 0.8 to 1.0 MPa.

又,加熱處理亦可進行複數次。於實施複數次加熱處理之情形時,可變更每一次之加熱條件。 例如,於實施複數次加熱處理之情形時,可改變加熱溫度。例如,於實施2次加熱處理之情形時,可於未達100℃之溫度條件下實施第1次加熱處理,於100℃以上之溫度條件下實施第2次加熱處理。 又,於實施複數次加熱處理之情形時,可改變有無加壓處理。例如,於實施2次加熱處理之情形時,可按如下方式進行,即,於第1次加熱處理中一併實施加壓處理,於第2次加熱處理中不實施加壓處理。 再者,當使用轉印膜製造積層基板時,可於剝離臨時支持體後,實施上述加熱處理,亦可於臨時支持體配置於吸附層上之狀態下直接實施加熱處理。又,於實施複數次加熱處理之情形時,可於各加熱處理之間剝離臨時支持體。例如,可於實施第1次加熱處理後,剝離臨時支持體,並實施第2次加熱處理。In addition, the heat treatment may be performed multiple times. In the case of multiple heating treatments, the heating conditions can be changed each time. For example, when the heating treatment is performed multiple times, the heating temperature can be changed. For example, when the heat treatment is performed twice, the first heat treatment may be performed under the temperature condition of less than 100°C, and the second heat treatment may be performed under the temperature condition of 100°C or higher. In addition, when heat treatment is performed several times, the presence or absence of pressure treatment can be changed. For example, when the heat treatment is performed twice, it can be performed as follows. That is, the pressure treatment is performed in the first heat treatment together, and the pressure treatment is not performed in the second heat treatment. Furthermore, when manufacturing a laminated substrate using a transfer film, the above-mentioned heating treatment may be performed after the temporary support is peeled off, or the heating treatment may be directly performed in a state where the temporary support is arranged on the adsorption layer. In addition, when heat treatment is performed multiple times, the temporary support can be peeled off between each heat treatment. For example, after the first heat treatment is performed, the temporary support may be peeled off, and the second heat treatment may be performed.

可對積層基板之吸附層之表面實施表面處理。 作為表面處理,例如可例舉:電暈處理、電漿處理、紫外線臭氧處理(ultraviolet-ozone treatment),較佳為電暈處理。 於如下所述在吸附層之上形成聚醯亞胺膜之情形時,為了降低聚醯亞胺膜之表面粗糙度,吸附層之表面粗糙度(Ra)較佳為50 nm以下,更佳為30 nm以下,進而較佳為15 nm以下。又,為了可維持聚醯亞胺膜與吸附層密接之狀態,Ra較佳為0.1 nm以上,更佳為0.5 nm以上。Surface treatment can be performed on the surface of the adsorption layer of the build-up substrate. Examples of the surface treatment include corona treatment, plasma treatment, and ultraviolet-ozone treatment, and corona treatment is preferred. In the case of forming a polyimide film on the adsorption layer as described below, in order to reduce the surface roughness of the polyimide film, the surface roughness (Ra) of the adsorption layer is preferably 50 nm or less, more preferably 30 nm or less, more preferably 15 nm or less. Furthermore, in order to maintain the state in which the polyimide film and the adsorption layer are in close contact, Ra is preferably 0.1 nm or more, and more preferably 0.5 nm or more.

可使用上述積層基板10,製造依次具有支持基材12、吸附層14及被支持材之構造體。作為被支持材,亦可積層聚醯亞胺膜18以外之材料。作為被支持材,例如可例舉:聚醯亞胺樹脂膜、環氧樹脂膜、感光性抗蝕劑、聚酯樹脂膜(例如,聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯)、聚烯烴樹脂膜(例如,聚乙烯、聚丙烯)、聚胺基甲酸酯樹脂膜、金屬箔(例如,銅箔、鋁箔)、濺鍍膜(例如,銅、鈦、鋁、鎢、氮化矽、氧化矽、非晶矽)、TGV(Through Glass Via,玻璃通孔)基板、薄板玻璃基板、附犧牲層之薄板玻璃基板、ABF(Ajinomoto Build-up Film,味之素堆積膜)、藍寶石基板、矽基板、TSV(Through Silicon Via,矽通孔)基板、LED(Light Emitting Diode,發光二極體)晶片、顯示面板(例如,LCD、OLED、μ-LED)、人造鑽石、間隔紙等。The above-mentioned laminated substrate 10 can be used to manufacture a structure having a supporting base 12, an adsorption layer 14, and a supported material in this order. As the supported material, materials other than the polyimide film 18 may be laminated. As the supported material, for example, a polyimide resin film, an epoxy resin film, a photosensitive resist, a polyester resin film (for example, polyethylene terephthalate, polyethylene naphthalate Ester), polyolefin resin film (for example, polyethylene, polypropylene), polyurethane resin film, metal foil (for example, copper foil, aluminum foil), sputtering film (for example, copper, titanium, aluminum, tungsten, Silicon nitride, silicon oxide, amorphous silicon), TGV (Through Glass Via) substrate, thin glass substrate, thin glass substrate with sacrificial layer, ABF (Ajinomoto Build-up Film, Ajinomoto Build-up Film) , Sapphire substrate, silicon substrate, TSV (Through Silicon Via) substrate, LED (Light Emitting Diode, light-emitting diode) chip, display panel (for example, LCD, OLED, μ-LED), artificial diamond, spacer Paper etc.

<積層體及其製造方法> 使用上述積層基板10,可製造圖3所示之具有支持基材12、吸附層14及聚醯亞胺膜18之積層體16。 具體而言,作為積層體16之製造方法,可例舉如下之方法,即,於積層基板10之吸附層14側塗佈包含聚醯亞胺及溶劑之聚醯亞胺清漆,於周緣區域12a上及吸附層14上形成聚醯亞胺膜18,而形成依次具有支持基材12、吸附層14及聚醯亞胺膜18之積層體。 以下,對於上述製造方法進行詳細敍述,其後,對於聚醯亞胺膜18之構成進行詳細敍述。<Laminated body and its manufacturing method> Using the above-mentioned laminated substrate 10, the laminated body 16 having the supporting base 12, the adsorption layer 14, and the polyimide film 18 shown in FIG. 3 can be manufactured. Specifically, as a method of manufacturing the laminate 16, the following method may be exemplified. That is, a polyimide varnish containing polyimide and a solvent is applied to the side of the adsorption layer 14 of the laminate substrate 10, and the peripheral region 12a is applied. A polyimide film 18 is formed on the upper and the adsorption layer 14 to form a laminated body having a supporting base 12, an adsorption layer 14 and a polyimide film 18 in this order. Hereinafter, the above-mentioned manufacturing method will be described in detail, and thereafter, the structure of the polyimide film 18 will be described in detail.

(聚醯亞胺清漆) 聚醯亞胺清漆包含聚醯亞胺或其前驅物及溶劑。 聚醯亞胺通常係藉由使四羧酸二酐與二胺縮聚,並進行醯亞胺化而獲得。作為聚醯亞胺,較佳為具有溶劑可溶性。 作為所使用之四羧酸二酐,可例舉:芳香族四羧酸二酐、脂肪族四羧酸二酐。作為所使用之二胺,可例舉:芳香族二胺、脂肪族二胺。 作為芳香族四羧酸二酐,例如可例舉:均苯四甲酸二酐(1,2,4,5-苯四羧酸二酐)、3,3',4,4'-二苯甲酮四羧酸二酐、3,3',4,4'-聯苯四羧酸二酐、3,3',4,4'-二苯醚四羧酸二酐。 作為脂肪族四羧酸二酐,有環式或非環式之脂肪族四羧酸二酐,作為環式脂肪族四羧酸二酐,可例舉:1,2,3,4-環丁烷四羧酸二酐、1,2,4,5-環己烷四羧酸二酐、1,2,4,5-環戊烷四羧酸二酐等,作為非環式脂肪族四羧酸二酐,可例舉:1,2,3,4-丁烷四羧酸二酐、1,2,3,4-戊烷四羧酸二酐等。 作為芳香族二胺,例如可例舉:4,4'-氧基二胺基苯(4,4'-二胺基二苯醚)、1,3-雙(3-胺基苯氧基)苯、4,4'-雙(3-胺基苯氧基)聯苯、1,4-二胺基苯、1,3-二胺基苯。 作為脂肪族二胺,可例舉:乙二胺、六亞甲基二胺、聚乙二醇雙(3-胺基丙基)醚、聚丙二醇雙(3-胺基丙基)醚等非環式脂肪族二胺、1,3-雙(胺基甲基)環己烷、1,4-雙(胺基甲基)環己烷、異佛爾酮二胺、降𦯉烷二胺等環式脂肪族二胺。(Polyimide varnish) The polyimide varnish contains polyimide or its precursor and a solvent. Polyimine is usually obtained by polycondensing tetracarboxylic dianhydride and diamine, and then performing imidization. As polyimide, it is preferable to have solvent solubility. Examples of the tetracarboxylic dianhydride used include aromatic tetracarboxylic dianhydride and aliphatic tetracarboxylic dianhydride. As the diamine used, aromatic diamine and aliphatic diamine can be mentioned. As the aromatic tetracarboxylic dianhydride, for example, pyromellitic dianhydride (1,2,4,5-benzenetetracarboxylic dianhydride), 3,3',4,4'-diphenylmethyl Ketone tetracarboxylic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride. As the aliphatic tetracarboxylic dianhydride, there are cyclic or acyclic aliphatic tetracarboxylic dianhydrides. As the cyclic aliphatic tetracarboxylic dianhydride, for example: 1,2,3,4-cyclobutane Alkyltetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, 1,2,4,5-cyclopentanetetracarboxylic dianhydride, etc., as acyclic aliphatic tetracarboxylic acid The acid dianhydride may, for example, be 1,2,3,4-butanetetracarboxylic dianhydride, 1,2,3,4-pentanetetracarboxylic dianhydride, and the like. As the aromatic diamine, for example, 4,4'-oxydiaminobenzene (4,4'-diaminodiphenyl ether), 1,3-bis(3-aminophenoxy) Benzene, 4,4'-bis(3-aminophenoxy)biphenyl, 1,4-diaminobenzene, 1,3-diaminobenzene. The aliphatic diamine may, for example, be ethylene diamine, hexamethylene diamine, polyethylene glycol bis(3-aminopropyl) ether, polypropylene glycol bis(3-aminopropyl) ether, etc. Cycloaliphatic diamines, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, isophoronediamine, noralkanediamine, etc. Cycloaliphatic diamine.

所謂聚醯亞胺之前驅物意指為進行醯亞胺化前之狀態之聚醯胺酸(即所謂聚醯胺酸(polyamic acid)及/或聚醯胺酸酯)。The so-called polyimide precursor means the polyimide in the state before the imidization (that is, the so-called polyamic acid and/or polyamic acid ester).

溶劑只要為使聚醯亞胺或其前驅物溶解之溶劑即可,例如可例舉:酚系溶劑(例如間甲酚)、醯胺系溶劑(例如,N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺)、內酯系溶劑(例如,γ-丁內酯、δ-戊內酯、ε-己內酯、γ-巴豆酸內酯、γ-己內酯、α-甲基-γ-丁內酯、γ-戊內酯、α-乙醯基-γ-丁內酯、δ-己內酯)、亞碸系溶劑(例如,N,N-二甲基亞碸)、酮系溶劑(例如,丙酮、甲基乙基酮、甲基異丁基酮、環己酮)、酯系溶劑(例如,乙酸甲酯、乙酸乙酯、乙酸丁酯、碳酸二甲酯)。The solvent may be a solvent that dissolves the polyimide or its precursor, for example, phenolic solvents (for example, m-cresol), amide solvents (for example, N-methyl-2-pyrrolidone , N,N-dimethylformamide, N,N-dimethylacetamide), lactone-based solvents (for example, γ-butyrolactone, δ-valerolactone, ε-caprolactone, γ -Crotonic acid lactone, γ-caprolactone, α-methyl-γ-butyrolactone, γ-valerolactone, α-acetyl-γ-butyrolactone, δ-caprolactone), sulfenite Solvents (for example, N,N-dimethyl sulfide), ketone solvents (for example, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone), ester solvents (for example, methyl acetate Ester, ethyl acetate, butyl acetate, dimethyl carbonate).

(順序) 於積層基板10之吸附層14側塗佈聚醯亞胺清漆之方法無特別限制,可例舉公知之方法。例如可例舉:噴塗法、模嘴塗佈法、旋轉塗佈法、浸漬塗佈法、輥塗法、棒式塗佈法、網版印刷法、凹版塗佈法。(order) The method of coating the polyimide varnish on the side of the adsorption layer 14 of the build-up substrate 10 is not particularly limited, and a known method can be exemplified. For example, a spray coating method, a die nozzle coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, and a gravure coating method can be mentioned.

塗佈後,可視需要實施加熱處理。 作為加熱處理之條件,溫度條件較佳為50~500℃,更佳為50~450℃。加熱時間較佳為10~300分鐘,更佳為20~200分鐘。 又,加熱處理可進行複數次。於實施複數次加熱處理之情形時,可變更每一次之加熱條件。After coating, heat treatment may be performed as needed. As the conditions of the heat treatment, the temperature condition is preferably 50 to 500°C, more preferably 50 to 450°C. The heating time is preferably 10 to 300 minutes, more preferably 20 to 200 minutes. In addition, the heat treatment can be performed multiple times. In the case of multiple heating treatments, the heating conditions can be changed each time.

(積層體) 如圖3所示,積層體16具有支持基材12、吸附層14及聚醯亞胺膜18。 支持基材12及吸附層14之構成如上所述。(Layered body) As shown in FIG. 3, the laminate 16 has a supporting base 12, an adsorption layer 14 and a polyimide film 18. The structure of the support base 12 and the adsorption layer 14 is as described above.

聚醯亞胺膜18配置於支持基材12之周緣區域上及吸附層14上(吸附層14之第2主面14b上及端面14c上)。The polyimide film 18 is disposed on the peripheral area of the support base 12 and on the adsorption layer 14 (on the second main surface 14b and the end surface 14c of the adsorption layer 14).

聚醯亞胺膜18之厚度較佳為1 μm以上,更佳為5 μm以上。就柔軟性之方面而言,較佳為1 mm以下,更佳為0.2 mm以下。 為了於聚醯亞胺膜18上形成電子裝置之高精細之配線等,聚醯亞胺膜18之表面較佳為平滑。具體而言,聚醯亞胺膜18之表面粗糙度Ra較佳為50 nm以下,更佳為30 nm以下,進而較佳為10 nm以下。 關於聚醯亞胺膜18之熱膨脹係數,與支持基材12之熱膨脹係數差較小時能夠抑制加熱後或冷卻後之積層體16之翹曲,故較佳。具體而言,聚醯亞胺膜18與支持基材12之熱膨脹係數之差較佳為0~90×10-6 /℃,更佳為0~30×10-6 /℃。 聚醯亞胺膜18之面積無特別限制,就電子裝置之生產性之方面而言,較佳為300 cm2 以上。 聚醯亞胺膜18可有顏色,亦可為無色透明。The thickness of the polyimide film 18 is preferably 1 μm or more, more preferably 5 μm or more. In terms of flexibility, it is preferably 1 mm or less, and more preferably 0.2 mm or less. In order to form high-definition wiring of electronic devices on the polyimide film 18, the surface of the polyimide film 18 is preferably smooth. Specifically, the surface roughness Ra of the polyimide film 18 is preferably 50 nm or less, more preferably 30 nm or less, and still more preferably 10 nm or less. Regarding the thermal expansion coefficient of the polyimide film 18, it is preferable to suppress the warpage of the laminated body 16 after heating or cooling when the difference between the thermal expansion coefficient of the supporting substrate 12 and the thermal expansion coefficient of the polyimide film 18 is small. Specifically, the difference between the thermal expansion coefficient of the polyimide film 18 and the support base 12 is preferably 0 to 90×10 -6 /°C, more preferably 0 to 30×10 -6 /°C. The area of the polyimide film 18 is not particularly limited, but in terms of the productivity of the electronic device, it is preferably 300 cm 2 or more. The polyimide film 18 may be colored or colorless and transparent.

積層體16可用於各種用途,例如可例舉製造下述顯示裝置用面板、PV、薄膜二次電池、表面形成有電路之半導體晶圓、接收感測器面板等電子零件之用途。於該等用途中,亦存在如下情形,即,積層體於大氣氛圍下在高溫條件(例如,450℃以上)下暴露(例如,20分鐘以上)。 顯示裝置用面板包含LCD、OLED、電子紙、電漿顯示面板、場發射面板、量子點LED面板、微LED顯示面板、MEMS(microelectromechanical system,微機電系統)快門面板等。 接收感測器面板包含電磁波接收感測器面板、X射線受光感測器面板、紫外線受光感測器面板、可見光線受光感測器面板、紅外線受光感測器面板等。接收感測器面板所使用之基板可藉由樹脂等補強片材等加以補強。The laminated body 16 can be used for various purposes. For example, the following display device panels, PV, thin-film secondary batteries, semiconductor wafers with circuits formed on the surface, and electronic components such as receiving sensor panels can be exemplified. In these applications, there are also cases where the layered body is exposed (for example, 20 minutes or more) under high temperature conditions (for example, 450° C. or higher) in the atmosphere. Panels for display devices include LCD, OLED, electronic paper, plasma display panels, field emission panels, quantum dot LED panels, micro LED display panels, MEMS (microelectromechanical system, microelectromechanical system) shutter panels, and the like. The receiving sensor panel includes an electromagnetic wave receiving sensor panel, an X-ray receiving sensor panel, an ultraviolet receiving sensor panel, a visible light receiving sensor panel, an infrared receiving sensor panel, etc. The substrate used for the receiving sensor panel can be reinforced with a reinforcing sheet such as resin.

<電子裝置之製造方法> 可使用積層體,製造包含聚醯亞胺膜及下述電子裝置用構件之電子裝置。 電子裝置之製造方法例如圖4及5所示,為具備如下步驟之方法,即,構件形成步驟,其於積層體16之聚醯亞胺膜18上(聚醯亞胺膜18之與吸附層14側為相反側之表面上)形成電子裝置用構件20,獲得附電子裝置用構件之積層體22;及分離步驟,其自附電子裝置用構件之積層體22獲得具有聚醯亞胺膜18及電子裝置用構件20之電子裝置24。<Manufacturing method of electronic device> The laminate can be used to manufacture an electronic device including a polyimide film and the following electronic device components. The manufacturing method of an electronic device, as shown in Figures 4 and 5, is a method having the following steps, namely, a component forming step, which is placed on the polyimide film 18 of the laminate 16 (the polyimide film 18 and the adsorption layer 14 side is on the surface on the opposite side) forming an electronic device member 20 to obtain a laminate 22 with an electronic device member; and a separation step, which obtains a polyimide film 18 from the laminate 22 with an electronic device member And the electronic device 24 of the electronic device component 20.

以下,將形成電子裝置用構件20之步驟稱為「構件形成步驟」,將分離成電子裝置24與附吸附層之支持基材26之步驟稱為「分離步驟」。 以下,對於各步驟中所使用之材料及順序進行詳細敍述。Hereinafter, the step of forming the member 20 for an electronic device is referred to as a "member forming step", and the step of separating the electronic device 24 and the support substrate 26 with an adsorption layer is referred to as a "separating step". Hereinafter, the materials and procedures used in each step will be described in detail.

(構件形成步驟) 構件形成步驟係於積層體16之聚醯亞胺膜18上形成電子裝置用構件之步驟。更具體而言,如圖4所示,於聚醯亞胺膜18上(聚醯亞胺膜18之與吸附層14側為相反側之表面上)形成電子裝置用構件20,獲得附電子裝置用構件之積層體22。 再者,為了提高電子裝置之可靠性,可於聚醯亞胺膜18上形成障壁層。障壁層之材料無特別限制,可使用公知之材料。作為構成障壁層之材料,例如可例舉氮化矽、氧化矽。又,障壁層可為1層,可為2層以上,亦可組合複數種材料。成膜方法無特別限制,可例舉公知之方法。例如可例舉:電漿CVD(Chemical Vapor Deposition,化學氣相沈積)、濺鍍等方法。 首先,對於本步驟中所使用之電子裝置用構件20進行詳細敍述,其後,對於步驟之順序進行詳細敍述。(Component formation step) The component forming step is a step of forming components for electronic devices on the polyimide film 18 of the laminate 16. More specifically, as shown in FIG. 4, an electronic device member 20 is formed on the polyimide film 18 (on the surface of the polyimide film 18 on the opposite side to the adsorption layer 14 side) to obtain an electronic device Use the laminated body 22 of the component. Furthermore, in order to improve the reliability of the electronic device, a barrier layer can be formed on the polyimide film 18. The material of the barrier layer is not particularly limited, and known materials can be used. Examples of the material constituting the barrier layer include silicon nitride and silicon oxide. In addition, the barrier layer may be one layer, two or more layers, or a combination of multiple materials. The film forming method is not particularly limited, and known methods may be mentioned. For example, methods such as plasma CVD (Chemical Vapor Deposition) and sputtering can be cited. First, the electronic device member 20 used in this step will be described in detail, and thereafter, the order of the steps will be described in detail.

(電子裝置用構件) 電子裝置用構件20係構成形成於積層體16之聚醯亞胺膜18上的電子裝置之至少一部分之構件。更具體而言,作為電子裝置用構件20,可例舉:顯示裝置用面板、太陽電池、薄膜二次電池、或表面形成有電路之半導體晶圓等電子零件、接收感測器面板等所使用之構件(例如,LTPS(Low Temperature Poly Silicon,低溫多晶矽)等顯示裝置用構件、太陽電池用構件、薄膜二次電池用構件、電子零件用電路、接收感測器用構件),例如可例舉:美國專利申請公開第2018/0178492號說明書之段落[0192]所記載之太陽電池用構件、相同說明書之段落[0193]所記載之薄膜二次電池用構件、相同說明書之段落[0194]所記載之電子零件用電路。(Components for electronic devices) The electronic device member 20 is a member that constitutes at least a part of the electronic device formed on the polyimide film 18 of the laminate 16. More specifically, as the member 20 for electronic devices, for example, panels for display devices, solar cells, thin-film secondary batteries, or electronic parts such as semiconductor wafers with circuits formed on the surface, used for receiving sensor panels, etc. The components (for example, LTPS (Low Temperature Poly Silicon, low temperature polysilicon) and other display device components, components for solar cells, components for thin-film secondary batteries, components for electronic parts, components for receiving sensors), for example, include: U.S. Patent Application Publication No. 2018/0178492 Specification Paragraph [0192] The solar cell component, the same specification Paragraph [0193] The thin film secondary battery component, the same specification Paragraph [0194] Circuits for electronic parts.

(步驟之順序) 上述附電子裝置用構件之積層體22之製造方法無特別限制,根據電子裝置用構件之構成構件之種類,利用先前公知之方法,於積層體16之聚醯亞胺膜18上形成電子裝置用構件20。 電子裝置用構件20可為最終形成於聚醯亞胺膜18上之全部構件之一部分(以下,稱為「部分構件」),而不是最終形成於聚醯亞胺膜18上之構件之全部(以下,稱為「全部構件」)。亦可將自吸附層14剝離之附部分構件之基板於其後之步驟中設為附全部構件之基板(相當於下述電子裝置)。 亦可於自吸附層14剝離之附全部構件之基板之剝離面形成有其他電子裝置用構件。進而,亦可使2片附電子裝置用構件之積層體22之電子裝置用構件20彼此對向,將兩者貼合而組裝附全部構件之積層體,其後,自附全部構件之積層體剝離2片附吸附層之支持基材,製造電子裝置。(Sequence of steps) The manufacturing method of the above-mentioned laminate 22 with the member for electronic device is not particularly limited. According to the type of the constituent member of the member for electronic device, a previously known method is used to form the electronic device on the polyimide film 18 of the laminate 16 Component 20. The electronic device member 20 may be a part of all the members that are finally formed on the polyimide film 18 (hereinafter, referred to as "partial members"), rather than all of the members that are finally formed on the polyimide film 18 ( Hereinafter, referred to as "all components"). The substrate with partial components peeled from the adsorption layer 14 may be used as a substrate with all components (equivalent to the electronic device described below) in the subsequent steps. Other electronic device members may be formed on the peeling surface of the substrate with all members peeled from the adsorption layer 14. Furthermore, the two electronic device members 20 of the laminated body 22 with the electronic device members may be opposed to each other, and the two pieces of the laminated body with all the members may be assembled together, and then the laminated body with all the members may be self-attached. Peel off two supporting substrates with adsorption layers to manufacture electronic devices.

例如,若以製造OLED之情形為例,則為了於積層體16之聚醯亞胺膜18之與吸附層14側為相反側之表面上形成有機EL構造體,而進行各種層形成或處理,如,形成透明電極;進而於形成有透明電極之面上蒸鍍電洞注入層、電洞傳輸層、發光層、電子傳輸層等;形成背面電極;使用密封板密封等。作為該等層形成或處理,具體而言,例如可例舉:成膜處理、蒸鍍處理、密封板之接著處理等。For example, taking the case of manufacturing OLED as an example, in order to form an organic EL structure on the surface of the polyimide film 18 of the laminate 16 on the opposite side to the adsorption layer 14 side, various layer formation or treatments are performed, For example, forming a transparent electrode; then vaporizing a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, etc. on the surface where the transparent electrode is formed; forming a back electrode; sealing with a sealing plate, etc. As the layer formation or treatment, specifically, for example, film formation treatment, vapor deposition treatment, bonding treatment of sealing plate, etc. may be mentioned.

(分離步驟) 分離步驟為如下步驟,即,如圖5所示,將吸附層14與聚醯亞胺膜18之界面作為剝離面,由上述構件形成步驟中所獲得之附電子裝置用構件之積層體22,分離成積層有電子裝置用構件20之聚醯亞胺膜18與附吸附層之支持基材26,獲得包含電子裝置用構件20及聚醯亞胺膜18之電子裝置24。(Separation step) The separation step is the following step, that is, as shown in FIG. 5, the interface between the adsorption layer 14 and the polyimide film 18 is used as the peeling surface, and the layered body 22 of the member with electronic device obtained in the above member forming step is used, The polyimide film 18 on which the electronic device member 20 is laminated and the support substrate 26 with an adsorption layer are separated into an electronic device 24 including the electronic device member 20 and the polyimide film 18.

於所剝離之聚醯亞胺膜18上之電子裝置用構件20為形成所需之全部構成構件之一部分之情形時,亦可於分離後,於聚醯亞胺膜18上形成剩餘之構成構件。In the case where the electronic device member 20 on the peeled polyimide film 18 is a part of all the required constituent members, it is also possible to form the remaining constituent members on the polyimide film 18 after separation .

將聚醯亞胺膜18及吸附層14剝離之方法無特別限制。例如,可將銳利之刃具狀物體插入至聚醯亞胺膜18與支持基材12之界面,形成剝離之起點,其後吹送水與壓縮空氣之混合流體而剝離。 較佳為,將附電子裝置用構件之積層體22以支持基材12為上側、電子裝置用構件20側為下側之方式設置於壓盤上,將電子裝置用構件20側真空吸附至壓盤上,於該狀態下首先使刃具狀物體侵入至聚醯亞胺膜18與支持基材12之界面。其後,藉由複數個真空吸盤吸附支持基材12側,自插入有刃具狀物體之位置附近依次使真空吸盤上升。如此,可容易地剝離附吸附層之支持基材26。The method of peeling off the polyimide film 18 and the adsorption layer 14 is not particularly limited. For example, a sharp blade-like object can be inserted into the interface between the polyimide film 18 and the supporting substrate 12 to form a starting point for peeling, and then a mixed fluid of water and compressed air may be blown to peel off. Preferably, the laminated body 22 with the electronic device member is placed on the platen with the support base 12 on the upper side and the electronic device member 20 side on the lower side, and the electronic device member 20 side is vacuum sucked to the pressure On the disk, in this state, the blade-shaped object is first intruded into the interface between the polyimide film 18 and the supporting base 12. Thereafter, a plurality of vacuum chucks are used to suck the support substrate 12 side, and the vacuum chucks are sequentially raised from the vicinity of the position where the blade-shaped object is inserted. In this way, the support base 26 with the adsorption layer can be easily peeled off.

當自附電子裝置用構件之積層體22分離電子裝置24時,藉由控制利用離子化器所進行之吹送或控制濕度,可進一步抑制吸附層14之碎片靜電吸附於電子裝置24。 上述電子裝置之製造方法適於製造例如美國專利申請公開第2018/0178492號說明書之段落[0210]所記載之顯示裝置,作為電子裝置24,例如可例舉相同說明書之段落[0211]所記載者。When the electronic device 24 is separated from the laminated body 22 with the electronic device component, by controlling the blowing by the ionizer or controlling the humidity, the fragments of the adsorption layer 14 can be further prevented from being electrostatically attracted to the electronic device 24. The manufacturing method of the above-mentioned electronic device is suitable for manufacturing the display device described in paragraph [0210] of the specification of U.S. Patent Application Publication No. 2018/0178492. As the electronic device 24, for example, the one described in paragraph [0211] of the same specification can be cited .

又,於實施上述分離步驟前,亦可切斷積層體之未配置電子裝置用構件之區域而將其去除。 [實施例]Moreover, before performing the above-mentioned separation step, it is also possible to cut and remove the area of the laminate where the electronic device member is not arranged. [Example]

以下,藉由實施例等,具體地說明本發明,但本發明並不受該等例之限制。Hereinafter, the present invention will be specifically explained through examples, but the present invention is not limited by these examples.

以下,作為支持基材,使用包含無鹼硼矽酸玻璃之玻璃板(線膨脹係數38×10-7 /℃、AGC股份有限公司製造 商品名「AN100」)。 以下,例1~例5為實施例,例6~例7為比較例。Hereinafter, as a supporting base material, a glass plate containing alkali-free borosilicate glass (coefficient of linear expansion 38×10 -7 /°C, trade name "AN100" manufactured by AGC Co., Ltd.) is used. Hereinafter, Examples 1 to 5 are examples, and Examples 6 to 7 are comparative examples.

<外觀評價> 目測觀察按下述順序所獲得之依次具有玻璃板、矽酮樹脂層及聚醯亞胺膜的積層體中之聚醯亞胺膜,按照以下之基準進行評價。 A:聚醯亞胺膜未發生剝離。 B:雖然聚醯亞胺膜之一部分發生剝離,但為實用上無問題之範圍。 C:聚醯亞胺膜之大部分或整個面發生剝離,故為實用上有問題之範圍。<Appearance evaluation> The polyimide film in the laminate having the glass plate, the silicone resin layer, and the polyimide film obtained in the following order was visually observed, and evaluated according to the following criteria. A: The polyimide film did not peel off. B: Although a part of the polyimide film was peeled off, it was in a range where there was no practical problem. C: Most or the entire surface of the polyimide film is peeled off, so it is a practically problematic area.

<周緣區域之寬度評價> 按照以下之基準評價支持基材之周緣區域之寬度。 A:寬度為1 mm以上10 mm以下 B:寬度超過10 mm且30 mm以下 C:寬度超過30 mm且未達1 mm<Evaluation of the width of the peripheral area> Evaluate the width of the peripheral area of the support substrate according to the following criteria. A: The width is 1 mm or more and 10 mm or less B: The width is more than 10 mm and less than 30 mm C: The width exceeds 30 mm and does not reach 1 mm

<異物嵌埋性> 目測觀察按下述順序所獲得之依次配置有玻璃板、矽酮樹脂層及PET膜之積層體,按照以下之基準進行評價。 A:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡為5個以下。 B:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡多於5個,且為10個以下。 C:玻璃板/矽酮樹脂層界面之由異物所引起之界面氣泡多於10個。 <Foreign body embedding property> Visually observe the laminated body in which the glass plate, the silicone resin layer, and the PET film are arranged in the following order, and evaluate it according to the following criteria. A: The interface bubbles caused by foreign matter at the glass plate/silicone resin layer interface are 5 or less. B: There are more than 5 interfacial bubbles caused by foreign matter at the glass plate/silicone resin layer interface, and 10 or less. C: There are more than 10 interface bubbles caused by foreign matter at the glass plate/silicone resin layer interface.

<例1> (硬化性矽酮之製備) 於1 L之燒瓶中加入三乙氧基甲基矽烷(179 g)、甲苯(300 g)、乙酸(5 g),將混合物於25℃下攪拌20分鐘後,進而加熱至60℃,反應12小時。將所獲得之反應粗液冷卻至25℃後,使用水(300 g),清洗反應粗液3次。於洗淨之反應粗液中加入氯化三甲基矽烷(70 g),將混合物於25℃下攪拌20分鐘後,進而加熱至50℃,反應12小時。將所獲得之反應粗液冷卻至25℃後,使用水(300 g),清洗反應粗液3次。自洗淨之反應粗液中減壓蒸餾去除甲苯,製成漿料狀態後,藉由真空乾燥機進行整夜乾燥,藉此獲得白色之有機聚矽氧烷化合物、即硬化性矽酮1。硬化性矽酮1之T單元之個數:M單元之個數=87:13(莫耳比)。再者,M單元意指(R)3 SiO1/2 所表示之1官能有機矽烷氧基單元。T單元意指RSiO3/2 (R表示氫原子或有機基)所表示之3官能有機矽烷氧基單元。<Example 1> (Preparation of curable silicone) Triethoxymethylsilane (179 g), toluene (300 g), and acetic acid (5 g) were added to a 1 L flask, and the mixture was stirred at 25°C After 20 minutes, it was further heated to 60°C and reacted for 12 hours. After the obtained crude reaction liquid was cooled to 25°C, water (300 g) was used to wash the crude reaction liquid 3 times. Trimethylsilyl chloride (70 g) was added to the washed crude reaction liquid, and the mixture was stirred at 25°C for 20 minutes, then heated to 50°C, and reacted for 12 hours. After the obtained crude reaction liquid was cooled to 25°C, water (300 g) was used to wash the crude reaction liquid 3 times. The toluene was distilled off under reduced pressure from the washed crude reaction liquid, and after the slurry was made into a slurry state, it was dried overnight with a vacuum dryer, thereby obtaining a white organopolysiloxane compound, that is, curable silicone 1. The number of T units of the sclerosing silicone 1: the number of M units=87:13 (mole ratio). In addition, the M unit means a monofunctional organosilalkoxy unit represented by (R) 3 SiO 1/2. The T unit means a trifunctional organosilalkoxy unit represented by RSiO 3/2 (R represents a hydrogen atom or an organic group).

(硬化性組合物之製備) 將硬化性矽酮1與庚烷加以混合,進而添加有機鋯系化合物(辛酸鋯化合物)及有機鉍系化合物(2-乙基己酸鉍)。溶劑量以固形物成分濃度成為50質量%之方式進行調整。又,金屬化合物之添加量以金屬元素相對於樹脂100質量份為0.1質量份之方式進行調整。將所獲得之混合液使用孔徑0.45 μm之過濾器進行過濾,藉此獲得硬化性組合物。 將硬化性矽酮1與庚烷加以混合,進而添加有機鋯系化合物(辛酸鋯化合物)及有機鈰系化合物(2-乙基己酸鈰)。溶劑量以固形物成分濃度成為50質量%之方式進行調整。又,金屬化合物之添加量以金屬元素相對於樹脂100質量份為0.1質量份之方式進行調整。將所獲得之混合液使用孔徑0.45 μm之過濾器進行過濾,藉此獲得硬化性組合物。(Preparation of curable composition) The curable silicone 1 and heptane are mixed, and an organic zirconium compound (zirconium octoate compound) and an organic bismuth compound (bismuth 2-ethylhexanoate) are further added. The amount of solvent is adjusted so that the solid content concentration becomes 50% by mass. In addition, the addition amount of the metal compound was adjusted so that the metal element was 0.1 parts by mass relative to 100 parts by mass of the resin. The obtained mixed solution was filtered using a filter with a pore size of 0.45 μm, thereby obtaining a curable composition. The curable silicone 1 and heptane are mixed, and the organic zirconium compound (zirconium octoate compound) and the organic cerium compound (cerium 2-ethylhexanoate) are further added. The amount of solvent is adjusted so that the solid content concentration becomes 50% by mass. In addition, the addition amount of the metal compound was adjusted so that the metal element was 0.1 parts by mass relative to 100 parts by mass of the resin. The obtained mixed solution was filtered using a filter with a pore size of 0.45 μm, thereby obtaining a curable composition.

(積層基板之製作) 於聚對苯二甲酸乙二酯膜(PET膜)(東洋紡公司製造、COSMOSHINE A4100)之表面上塗佈所製備之硬化性組合物,使用加熱板於140℃下加熱10分鐘,藉此形成矽酮樹脂層。矽酮樹脂層之厚度為8 μm。 繼而,藉由水系玻璃洗淨劑(Parker Corporation股份有限公司製造之「PK-LCG213」)洗淨後,將經純水洗淨之200×200 mm、厚度0.5 mm之玻璃板「AN100」(支持基材)、與形成有矽酮樹脂層之PET膜進行貼合,製作依次配置有玻璃板、矽酮樹脂層、及PET膜之積層體。再者,於上述貼合時,以玻璃板之表面之周緣區域殘留未配置矽酮樹脂層之區域之方式進行貼合(參照圖2)。周緣區域之寬度W為5 mm。 其次,將所獲得之積層體配置於高壓釜內,於60℃、1 MPa之條件下加熱30分鐘。其後,剝離PET膜,對於包含玻璃板及矽酮樹脂層之積層基板,於250℃下實施30分鐘退火處理後,對矽酮樹脂層實施電暈處理。所獲得之矽酮樹脂層具有玻璃板側之第1主面、與第1主面為相反側之第2主面、及連接第1主面及第2主面之端面,上述端面係自第2主面起,越往第1主面越突出之傾斜面。上述傾斜面與第1主面所成之角度為3°。矽酮樹脂層之第1主面與第2主面之間之厚度為8 μm。(Production of multilayer substrate) Coat the prepared curable composition on the surface of a polyethylene terephthalate film (PET film) (manufactured by Toyobo Co., Ltd., COSMOSHINE A4100), and heat it at 140°C for 10 minutes using a hot plate to form silicon Ketone resin layer. The thickness of the silicone resin layer is 8 μm. Then, after washing with a water-based glass cleaner ("PK-LCG213" manufactured by Parker Corporation), the 200×200 mm glass plate "AN100" (supported by Substrate), and the PET film on which the silicone resin layer is formed are bonded to produce a laminated body in which the glass plate, the silicone resin layer, and the PET film are sequentially arranged. Furthermore, at the time of the above-mentioned bonding, bonding is performed in such a way that a region where the silicone resin layer is not arranged remains on the peripheral region of the surface of the glass plate (refer to FIG. 2). The width W of the peripheral area is 5 mm. Next, the obtained laminate was placed in an autoclave and heated at 60°C and 1 MPa for 30 minutes. After that, the PET film was peeled off, and the laminated substrate including the glass plate and the silicone resin layer was subjected to an annealing treatment at 250° C. for 30 minutes, and then corona treatment was applied to the silicone resin layer. The obtained silicone resin layer has a first main surface on the side of the glass plate, a second main surface opposite to the first main surface, and an end surface connecting the first main surface and the second main surface, and the end surface is from the first main surface. 2 The inclined surface that protrudes from the main surface to the first main surface. The angle formed by the inclined surface and the first principal surface is 3°. The thickness between the first main surface and the second main surface of the silicone resin layer is 8 μm.

(積層體之製作) 於上述所獲得之積層基板之矽酮樹脂層側之表面塗佈聚醯亞胺清漆(宇部興產公司製造、UPIA-ST-1003),於60℃下加熱30分鐘後,進而於120℃下加熱30分鐘,其後於450℃下加熱10分鐘,獲得依次具有玻璃板、矽酮樹脂層及聚醯亞胺膜(厚度:7 μm)之積層體。聚醯亞胺膜配置於玻璃板之周緣區域上及矽酮樹脂層上(參照圖3)。(Production of multilayer body) Polyimide varnish (manufactured by Ube Industries Co., Ltd., UPIA-ST-1003) was coated on the surface of the silicone resin layer side of the multilayer substrate obtained above, heated at 60°C for 30 minutes, and then at 120°C It was heated for 30 minutes and then heated at 450°C for 10 minutes to obtain a laminate having a glass plate, a silicone resin layer, and a polyimide film (thickness: 7 μm) in this order. The polyimide film is arranged on the peripheral area of the glass plate and on the silicone resin layer (refer to Figure 3).

<例2~例14> 將矽酮樹脂層之第1主面與第2主面之間之厚度、周緣區域之寬度及角度如下述表1及表2所示進行調整,除此以外,按照與例1相同之順序獲得積層體。表1係使用包含鉍之硬化性組合物之情形,表2係使用包含鈰之硬化性組合物之情形。 再者,關於例6及7、及13及14,於玻璃板之整個面塗佈硬化性組合物,將塗膜於250℃下加熱30分鐘使之硬化,於玻璃板之整個面上製作矽酮樹脂層後,切斷所獲得之附矽酮樹脂層之玻璃板之周緣部,獲得具有玻璃板及矽酮樹脂層且具有平滑之側面之積層體(以下,亦稱為「積層體C」),其後使用積層體C實施上述內容(積層體之製作)。即,關於例6及7、及13及14所使用之積層體C,具有矽酮樹脂層之玻璃板側之主面之面積和與玻璃板側為相反側之主面之面積相同、且θ相當於90°之矽酮樹脂層。<Example 2~Example 14> Adjust the thickness between the first main surface and the second main surface of the silicone resin layer, and the width and angle of the peripheral area as shown in the following Table 1 and Table 2. Other than that, follow the same procedure as in Example 1 to obtain Layered body. Table 1 is the case of using the curable composition containing bismuth, and Table 2 is the case of using the curable composition containing cerium. Furthermore, regarding Examples 6 and 7, and 13 and 14, the curable composition was applied to the entire surface of the glass plate, and the coating film was heated at 250°C for 30 minutes to harden, and silicon was produced on the entire surface of the glass plate. After the ketone resin layer, cut the periphery of the obtained glass plate with silicone resin layer to obtain a laminated body having a glass plate and a silicone resin layer and having smooth sides (hereinafter, also referred to as "laminated body C" ), and then use the laminated body C to implement the above-mentioned contents (the production of the laminated body). That is, regarding the laminate C used in Examples 6 and 7, and 13 and 14, the area of the main surface on the glass plate side with the silicone resin layer is the same as the area of the main surface on the opposite side to the glass plate side, and θ Equivalent to 90° of silicone resin layer.

表1及表2中,「吸附層厚度(μm)」欄表示矽酮樹脂層之第1主面與第2主面之間之厚度。 表1及表2中,「周緣區域寬度(mm)」欄表示周緣區域之寬度(圖2之W)。 表1及表2中,「角度(°)」欄表示矽酮樹脂層之第1主面與傾斜面所成之角度。角度之測定方法如上所述。In Tables 1 and 2, the column of "adsorption layer thickness (μm)" indicates the thickness between the first and second main surfaces of the silicone resin layer. In Table 1 and Table 2, the column of "peripheral area width (mm)" indicates the width of the peripheral area (W in Fig. 2). In Table 1 and Table 2, the "angle (°)" column indicates the angle formed by the first principal surface of the silicone resin layer and the inclined surface. The angle measurement method is as described above.

[表1] 吸附層厚度(μm) 周緣區域寬度(mm) 角度(°) 評價 外觀評價 寬度評價 異物嵌埋性 1 8 5 3 A A A 2 8 30 3 A B A 3 15 5 3 B A A 4 4 1 3 A A B 5 8 50 3 A C A 6 8 0 90 C C A 7 15 0 90 C C A [Table 1] example Adsorption layer thickness (μm) Width of peripheral area (mm) Angle (°) Evaluation Appearance evaluation Width evaluation Embedding of foreign bodies 1 8 5 3 A A A 2 8 30 3 A B A 3 15 5 3 B A A 4 4 1 3 A A B 5 8 50 3 A C A 6 8 0 90 C C A 7 15 0 90 C C A

[表2] 吸附層厚度(μm) 周緣區域寬度(mm) 角度 (°) 評價 外觀評價 寬度評價 異物嵌埋性 8 8 5 3 A A A 9 8 30 3 A B A 10 15 5 3 B A A 11 4 1 3 A A B 12 8 50 3 A C A 13 8 0 90 C C A 14 15 0 90 C C A [Table 2] example Adsorption layer thickness (μm) Width of peripheral area (mm) Angle (°) Evaluation Appearance evaluation Width evaluation Embedding of foreign bodies 8 8 5 3 A A A 9 8 30 3 A B A 10 15 5 3 B A A 11 4 1 3 A A B 12 8 50 3 A C A 13 8 0 90 C C A 14 15 0 90 C C A

如表1及表2所示,本發明之積層基板顯示出所需之效果。 尤其是於使用包含鉍之硬化性組合物之情形時,根據例1~3及5與例4之比較,確認到於吸附層之厚度為6 μm以上之情形時,異物嵌埋性更加優異。 又,根據例1與3之比較,確認到於吸附層之厚度為12 μm以下之情形時,外觀特性更加優異。 於使用包含鈰之硬化性組合物之情形時亦相同,根據例8~10及12與例11之比較,確認到於吸附層之厚度為6 μm以上之情形時,異物嵌埋性更加優異。 又,根據例8與10之比較,確認到於吸附層之厚度為12 μm以下之情形時,外觀特性更加優異。As shown in Table 1 and Table 2, the laminated substrate of the present invention exhibits the desired effect. Especially in the case of using a curable composition containing bismuth, comparing Examples 1 to 3 and 5 with Example 4, it was confirmed that when the thickness of the adsorption layer is 6 μm or more, the foreign body embedding property is more excellent. In addition, according to the comparison between Examples 1 and 3, it was confirmed that when the thickness of the adsorption layer is 12 μm or less, the appearance characteristics are more excellent. The same applies to the case of using the curable composition containing cerium. According to the comparison of Examples 8 to 10 and 12 with Example 11, it was confirmed that when the thickness of the adsorption layer is 6 μm or more, the foreign matter embedding property is more excellent. In addition, from a comparison between Examples 8 and 10, it was confirmed that when the thickness of the adsorption layer was 12 μm or less, the appearance characteristics were more excellent.

<有機EL顯示裝置(相當於電子裝置)之製造> 使用例1~5、8~12所獲得之積層體,按照以下之順序製造有機EL顯示裝置。 首先,於積層基板之聚醯亞胺膜之與玻璃板側為相反側之表面上,藉由電漿CVD法按照氮化矽、氧化矽、非晶矽之順序成膜。其次,藉由離子摻雜裝置,將低濃度之硼注入至非晶矽層,進行加熱處理並進行脫氫處理。其次,藉由雷射退火裝置進行非晶矽層之結晶化處理。其次,藉由使用光微影法之蝕刻及離子摻雜裝置,將低濃度之磷注入至非晶矽層,形成N型及P型之TFT(Thin-Film Transistor,薄膜電晶體)區域。 其次,於聚醯亞胺膜之與玻璃板側相反一側,藉由電漿CVD法使氧化矽膜成膜而形成閘極絕緣膜,其後利用濺鍍法使鉬成膜,藉由使用光微影法之蝕刻而形成閘極電極。其次,藉由光微影法及離子摻雜裝置,將高濃度之硼及磷注入至N型、P型各自所需之區域,形成源極區域及汲極區域。 其次,於聚醯亞胺膜之與玻璃板側相反一側,利用電漿CVD法使氧化矽成膜,藉此形成層間絕緣膜,藉由濺鍍法使鋁成膜並藉由使用光微影法所進行之蝕刻而形成TFT電極。其次,於氫氣氛圍下,進行加熱處理並進行加氫處理後,藉由利用電漿CVD法所進行之氮化矽成膜而形成鈍化層。 其次,於聚醯亞胺膜之與玻璃板側相反一側塗佈紫外線硬化性樹脂,利用光微影法形成平坦化層及接觸孔。其次,藉由濺鍍法使氧化銦錫成膜,藉由使用光微影法所進行之蝕刻而形成像素電極。繼而,利用蒸鍍法,於聚醯亞胺膜之與玻璃板側相反一側依次成膜有:作為電洞注入層之4,4',4''-三(3-甲基苯基苯基胺基)三苯胺、作為電洞傳輸層之雙[(N-萘基)-N-苯基]聯苯胺、作為發光層之將2,6-雙[4-[N-(4-甲氧基苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二甲腈(BSN-BCN)以40體積%混合於8-羥基喹啉鋁錯合物(Alq3 )中所得者、作為電子傳輸層之Alq3 。其次,利用濺鍍法使鋁成膜,藉由使用光微影法所進行之蝕刻而形成對向電極。 其次,於聚醯亞胺膜之與玻璃板側相反一側,經由紫外線硬化型接著層貼合另一片玻璃板進行密封。按照上述順序,於聚醯亞胺膜上形成有機EL構造體。聚醯亞胺膜上具有有機EL構造體之構造物(以下,稱為面板A)為附電子裝置用構件之積層體。 繼而,使面板A之密封體側真空吸附至壓盤後,將厚度0.1 mm之不鏽鋼製刃具插入至面板A之角隅部之聚醯亞胺膜與玻璃板之界面,於聚醯亞胺膜與玻璃板之界面形成剝離之起點。然後,藉由真空吸盤吸附面板A之支持基材表面後,使吸盤上升。此處,一面自離子化器(基恩士公司製造)向該界面吹送去靜電性流體,一面插入刃具。其次,自離子化器繼續向所形成之空隙吹送去靜電性流體,且,一面向剝離前線注水一面提拉真空吸盤。其結果,壓盤上僅殘留形成有有機EL構造體之聚醯亞胺膜,成功將附矽酮樹脂層之支持基材剝離。 繼而,使用雷射裁刀或劃線-斷裂法切斷所分離之聚醯亞胺膜,分割成複數個單元後,將形成有有機EL構造體之聚醯亞胺膜與對向基板進行組裝,實施模組形成步驟,製作有機EL顯示裝置。<Manufacturing of an organic EL display device (equivalent to an electronic device)> Using the laminates obtained in Examples 1 to 5 and 8 to 12, an organic EL display device was manufactured in the following procedure. First, on the surface of the polyimide film of the multilayer substrate opposite to the glass plate side, a film is formed in the order of silicon nitride, silicon oxide, and amorphous silicon by a plasma CVD method. Secondly, a low concentration of boron is implanted into the amorphous silicon layer by the ion doping device, and heat treatment is performed and dehydrogenation treatment is performed. Secondly, the crystallization treatment of the amorphous silicon layer is performed by the laser annealing device. Secondly, by using photolithography etching and ion doping devices, low-concentration phosphorus is implanted into the amorphous silicon layer to form N-type and P-type TFT (Thin-Film Transistor) regions. Next, on the side of the polyimide film opposite to the glass plate side, a silicon oxide film is formed by a plasma CVD method to form a gate insulating film, and then a molybdenum film is formed by a sputtering method. Photolithography etching to form gate electrodes. Secondly, by means of photolithography and ion doping devices, high concentrations of boron and phosphorus are implanted into the respective required regions of the N-type and P-type to form the source region and the drain region. Next, on the side of the polyimide film opposite to the glass plate side, a plasma CVD method is used to form a silicon oxide film to form an interlayer insulating film, and aluminum is formed by a sputtering method, and by using photomicrography The etching performed by the shadow method forms the TFT electrode. Next, heat treatment and hydrogenation treatment are performed in a hydrogen atmosphere, and then a passivation layer is formed by forming a silicon nitride film by a plasma CVD method. Next, an ultraviolet curable resin is coated on the side of the polyimide film opposite to the glass plate side, and a planarization layer and contact holes are formed by photolithography. Next, a film of indium tin oxide is formed by a sputtering method, and a pixel electrode is formed by etching using a photolithography method. Then, using the vapor deposition method, the polyimide film was formed on the side opposite to the glass plate side in sequence with: 4,4',4''-tris(3-methylphenylbenzene) as the hole injection layer Amino) triphenylamine, bis[(N-naphthyl)-N-phenyl]benzidine as a hole transport layer, 2,6-bis[4-[N-(4-methyl) as a light-emitting layer (Oxyphenyl)-N-phenyl)aminostyryl)naphthalene-1,5-dicarbonitrile (BSN-BCN) mixed with 8-hydroxyquinoline aluminum complex (Alq 3 ) at 40% by volume The medium gain is Alq 3 as the electron transport layer. Next, aluminum is formed into a film by a sputtering method, and a counter electrode is formed by etching using a photolithography method. Next, on the side opposite to the glass plate side of the polyimide film, another glass plate is bonded via an ultraviolet-curing adhesive layer to seal. According to the above procedure, an organic EL structure is formed on the polyimide film. The structure having an organic EL structure on the polyimide film (hereinafter referred to as panel A) is a laminate with a member for electronic devices. Then, after vacuuming the sealing body side of panel A to the pressure plate, insert a stainless steel cutting tool with a thickness of 0.1 mm into the interface between the polyimide film and the glass plate at the corner of panel A, on the polyimide film The interface with the glass plate forms the starting point for peeling. Then, after the surface of the supporting substrate of the panel A is sucked by the vacuum suction cup, the suction cup is raised. Here, while blowing the electrostatic fluid from the ionizer (manufactured by Keyence Corporation) to the interface, the cutting tool is inserted. Secondly, the electrostatic fluid is blown from the ionizer to the formed gap, and the vacuum chuck is pulled up while the water is injected into the peeling front line. As a result, only the polyimide film on which the organic EL structure was formed remained on the platen, and the support substrate with the silicone resin layer was successfully peeled off. Then, use a laser cutter or scribing-breaking method to cut the separated polyimide film and divide it into a plurality of units, then assemble the polyimide film with the organic EL structure and the counter substrate , Implement the module forming step to make an organic EL display device.

又,參照特定之實施方式,詳細地說明本發明,但業者清楚,可於不脫離本發明之精神及範圍之情況下進行各種變更或修正。 本申請係基於2020年1月31日提出申請之日本專利申請2020-015418、2020年4月17日提出申請之日本專利申請2020-074048、2020年6月8日提出申請之日本專利申請2020-099427者,其內容係作為參照而併入本說明書中。Furthermore, the present invention will be described in detail with reference to specific embodiments, but it is clear to the industry that various changes or modifications can be made without departing from the spirit and scope of the present invention. This application is based on the Japanese patent application 2020-015418 filed on January 31, 2020, the Japanese patent application 2020-074048 filed on April 17, 2020, and the Japanese patent application 2020- filed on June 8, 2020. 099427, the content of which is incorporated into this specification as a reference.

10:積層基板 12:支持基材 12a:周緣區域 14:矽酮樹脂層 14a:第1主面 14b:第2主面 14c:端面 16:積層體 18:聚醯亞胺膜 20:電子裝置用構件 22:附電子裝置用構件之積層體 24:電子裝置 26:附吸附層之支持基材 AB:線段 AC:線段 W:寬度 θ:角度10: Multilayer substrate 12: Support substrate 12a: Peripheral area 14: Silicone resin layer 14a: The first main surface 14b: The second main surface 14c: end face 16: layered body 18: Polyimide film 20: Components for electronic devices 22: Laminated body with components for electronic devices 24: electronic device 26: Supporting substrate with adsorption layer AB: line segment AC: line segment W: width θ: Angle

圖1係模式性地表示本發明之積層基板之一實施方式之剖視圖。 圖2係圖1所示之積層基板之俯視圖。 圖3係模式性地表示本發明之積層體之一實施方式之剖視圖。 圖4係用於說明構件形成步驟之圖。 圖5係用於說明分離步驟之圖。Fig. 1 is a cross-sectional view schematically showing an embodiment of the multilayer substrate of the present invention. FIG. 2 is a top view of the multilayer substrate shown in FIG. 1. FIG. Fig. 3 is a cross-sectional view schematically showing an embodiment of the laminate of the present invention. Fig. 4 is a diagram for explaining a step of forming a member. Fig. 5 is a diagram for explaining the separation step.

10:積層基板 10: Multilayer substrate

12:支持基材 12: Support substrate

12a:周緣區域 12a: Peripheral area

14:矽酮樹脂層 14: Silicone resin layer

14a:第1主面 14a: The first main surface

14b:第2主面 14b: The second main surface

14c:端面 14c: end face

AB:線段 AB: line segment

AC:線段 AC: line segment

θ:角度 θ: Angle

Claims (13)

一種積層基板,其具有玻璃製之支持基材、及配置於上述支持基材上之吸附層, 於上述支持基材之上述吸附層側之表面具有未配置上述吸附層之周緣區域, 上述吸附層具有上述支持基材側之第1主面、與上述第1主面為相反側之第2主面、及連接上述第1主面與上述第2主面之端面, 上述端面為自上述第2主面起,越往上述第1主面越突出之傾斜面,且 上述傾斜面與上述第1主面所成之角度未達10°。A laminated substrate having a supporting substrate made of glass and an adsorption layer arranged on the supporting substrate, On the surface of the support substrate on the side of the adsorption layer, there is a peripheral region where the adsorption layer is not arranged, The adsorption layer has a first main surface on the side of the support substrate, a second main surface on the opposite side to the first main surface, and an end surface connecting the first main surface and the second main surface, The end surface is an inclined surface that protrudes from the second main surface toward the first main surface, and The angle formed by the inclined surface and the first principal surface is less than 10°. 如請求項1之積層基板,其中上述吸附層之上述第1主面與上述第2主面之間之厚度為50 μm以下。The laminated substrate of claim 1, wherein the thickness between the first main surface and the second main surface of the adsorption layer is 50 μm or less. 如請求項1之積層基板,其中上述吸附層之上述第1主面與上述第2主面之間之厚度為12 μm以下。The laminated substrate of claim 1, wherein the thickness between the first main surface and the second main surface of the adsorption layer is 12 μm or less. 如請求項1之積層基板,其中上述吸附層之上述第1主面與上述第2主面之間之厚度為6 μm以上。The laminated substrate of claim 1, wherein the thickness between the first main surface and the second main surface of the adsorption layer is 6 μm or more. 如請求項1之積層基板,其中上述傾斜面與上述第1主面所成之角度為5°以下。The laminated substrate of claim 1, wherein the angle formed by the inclined surface and the first main surface is 5° or less. 如請求項1至5中任一項之積層基板,其中上述周緣區域之寬度為1~30 mm。The laminated substrate according to any one of claims 1 to 5, wherein the width of the peripheral region is 1-30 mm. 如請求項1至6中任一項之積層基板,其中上述吸附層為矽酮樹脂層。The multilayer substrate according to any one of claims 1 to 6, wherein the adsorption layer is a silicone resin layer. 如請求項1至7中任一項之積層基板,其進而具備配置於上述吸附層上之保護膜。The laminated substrate according to any one of claims 1 to 7, which further includes a protective film disposed on the adsorption layer. 一種積層基板之製造方法,其係如請求項1至8中任一項之積層基板之製造方法,具有:上述支持基材與轉印膜之貼合步驟,該步驟係於上述支持基材上貼合具有成為吸附層之前驅物膜之上述轉印膜,此時將上述支持基材與上述轉印膜配置為使得上述支持基材上具有未配置上述前驅物膜之周緣區域;及前驅物膜加熱步驟,其用於自上述前驅物膜獲得吸附層。A method for manufacturing a laminated substrate, which is the method for manufacturing a laminated substrate according to any one of claims 1 to 8, comprising: a step of attaching the above-mentioned supporting base material and the transfer film, and this step is performed on the above-mentioned supporting base material The above-mentioned transfer film having a precursor film that becomes the adsorption layer is laminated, and the supporting substrate and the transfer film are arranged so that the supporting substrate has a peripheral area where the precursor film is not arranged; and the precursor The film heating step is used to obtain an adsorption layer from the aforementioned precursor film. 一種積層體之製造方法,其於如請求項1至7中任一項之積層基板之上述吸附層側塗佈包含聚醯亞胺或其前驅物及溶劑之聚醯亞胺清漆,於上述周緣區域上及上述吸附層上形成聚醯亞胺膜,從而形成依次具有上述支持基材、上述吸附層、及上述聚醯亞胺膜之積層體。A method for manufacturing a laminated body, which coats a polyimide varnish containing polyimide or its precursor and a solvent on the side of the adsorption layer of the laminated substrate as claimed in any one of claims 1 to 7, on the periphery A polyimide film is formed on the region and on the adsorption layer, thereby forming a laminate having the support substrate, the adsorption layer, and the polyimide film in this order. 一種積層體,其具有:如請求項1至7中任一項之積層基板;及 聚醯亞胺膜,其配置於上述積層基板中之上述周緣區域上及上述吸附層上。A laminated body having: the laminated substrate according to any one of claims 1 to 7; and The polyimide film is arranged on the peripheral region and the adsorption layer of the laminated substrate. 一種附電子裝置用構件之積層體,其具有:如請求項11之積層體;及 電子裝置用構件,其配置於上述積層體中之上述聚醯亞胺膜上。A laminated body with components for electronic devices, which has: the laminated body as claimed in claim 11; and A member for an electronic device is arranged on the polyimide film in the laminate. 一種電子裝置之製造方法,其包括: 構件形成步驟,其於如請求項11之積層體之上述聚醯亞胺膜上形成電子裝置用構件,而獲得附電子裝置用構件之積層體;及 分離步驟,其自上述附電子裝置用構件之積層體獲得具有上述聚醯亞胺膜及上述電子裝置用構件之電子裝置。A manufacturing method of an electronic device, which includes: A component forming step of forming a component for an electronic device on the polyimide film of the laminated body of claim 11 to obtain a laminated body with a component for an electronic device; and In the separation step, an electronic device having the polyimide film and the electronic device member is obtained from the laminate with the electronic device member.
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