TW202106509A - Laminated substrate, method for manufacturing electronic device, and method for manufacturing laminated substrate comprising a supporting substrate made of glass and a polyimide resin layer arranged on the supporting substrate - Google Patents

Laminated substrate, method for manufacturing electronic device, and method for manufacturing laminated substrate comprising a supporting substrate made of glass and a polyimide resin layer arranged on the supporting substrate Download PDF

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TW202106509A
TW202106509A TW109117779A TW109117779A TW202106509A TW 202106509 A TW202106509 A TW 202106509A TW 109117779 A TW109117779 A TW 109117779A TW 109117779 A TW109117779 A TW 109117779A TW 202106509 A TW202106509 A TW 202106509A
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resin layer
polyimide resin
substrate
less
electronic device
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TWI813882B (en
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川崎周馬
長尾洋平
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日商Agc股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10018Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising only one glass sheet
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/08Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/10Removing layers, or parts of layers, mechanically or chemically
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/10Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/26Polymeric coating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Ceramic Capacitors (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The present invention relates to a laminated substrate comprising a supporting substrate made of glass and a polyimide resin layer arranged on the supporting substrate. On a surface of the polyimide resin layer opposite to the supporting substrate, the number of protrusions with a long-side length of 3 [mu]m or more and less than 50 [mu]m, a short-side length of less than 50 [mu]m, and a height of less than 5 [mu]m is 0.60/cm2, and the number of protrusions with a long-side length of 3 [mu]m to 1000 [mu]m, a short-side length of less than 20 [mu]m, and a height of less than 1 [mu]m is 0.15/cm2.

Description

積層基板、電子裝置之製造方法、及積層基板之製造方法Multilayer substrate, manufacturing method of electronic device, and manufacturing method of multilayer substrate

本發明係關於一種積層基板、電子裝置之製造方法、及積層基板之製造方法。The present invention relates to a manufacturing method of a multilayer substrate, an electronic device, and a manufacturing method of a multilayer substrate.

製造如太陽能電池;液晶面板(LCD,Liquid Crystal Display);有機EL顯示裝置(OLED,OrganicLight-Emitting Diode);感測電磁波、X射線、紫外線、可見光線、紅外線等之接收感測器面板;等電子裝置時,如專利文獻1所記載,揭示有一種使用聚醯亞胺樹脂層作為基板之形態。聚醯亞胺樹脂層以設置於玻璃基板上之積層基板之狀態使用,並將積層基板提供於製造電子裝置。形成電子裝置後,將聚醯亞胺樹脂層與玻璃基板分離。 [先前技術文獻] [專利文獻]Manufacturing such as solar cells; Liquid Crystal Display (LCD); Organic Light-Emitting Diode (OLED); Receiving sensor panels for sensing electromagnetic waves, X-rays, ultraviolet rays, visible rays, infrared rays, etc.; etc. In the case of electronic devices, as described in Patent Document 1, there is disclosed a form in which a polyimide resin layer is used as a substrate. The polyimide resin layer is used in the state of a build-up substrate provided on a glass substrate, and the build-up substrate is provided for manufacturing electronic devices. After the electronic device is formed, the polyimide resin layer is separated from the glass substrate. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2015-104843號公報[Patent Document 1] Japanese Patent Laid-Open No. 2015-104843

[發明所欲解決之問題][The problem to be solved by the invention]

近年來,謀求進一步提高有機電致發光(EL)顯示裝置所代表之電子裝置之耐久性。 本發明者等人對如專利文獻1所記載之使用具備玻璃製之支持基材與聚醯亞胺樹脂層之積層基板,並於聚醯亞胺樹脂層上形成電子裝置用構件所得之電子裝置之性能進行研討時發現,就耐久性尚有進一步改善之餘地。 本發明之目的在於提供一種可製造種耐久性優良之電子裝置(例如有機EL顯示裝置)且具備聚醯亞胺樹脂層之積層基板。 又,本發明之目的亦在於,提供一種電子裝置之製造方法及積層基板之製造方法。 [解決問題之技術手段]In recent years, efforts have been made to further improve the durability of electronic devices represented by organic electroluminescence (EL) display devices. The inventors of the present invention used a laminated substrate provided with a glass supporting substrate and a polyimide resin layer as described in Patent Document 1, and formed an electronic device component on the polyimide resin layer. During the study of its performance, it was found that there is still room for further improvement in terms of durability. The object of the present invention is to provide a laminated substrate provided with a polyimide resin layer that can manufacture electronic devices with excellent durability (for example, organic EL display devices). Moreover, the object of the present invention is also to provide a method of manufacturing an electronic device and a method of manufacturing a multilayer substrate. [Technical means to solve the problem]

本發明者等人積極研討,結果發現可藉由以下構成達成上述目的。The inventors of the present invention actively studied, and as a result, found that the above-mentioned object can be achieved by the following configuration.

(1)一種積層基板,其具備玻璃製之支持基材、與配置於支持基材上之聚醯亞胺樹脂層,且於聚醯亞胺樹脂層之與支持基材相反側之表面上, 長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,且高度為5 μm以下之凸部之數量為0.60個/cm2 以下。 長邊長度為3~1000 μm,短邊長度為20 μm,且深度為1 μm以下之凹部之數量為0.15個/cm2 以下。 (2)如(1)記載之積層基板,其中凸部中,長邊長度為10 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下,且包含Na及Cl之至少1種元素之第1凸部之數量為0.15個/cm2 以下。 (3)如(1)或(2)記載之積層基板,其中凸部中,長邊長度為3 μm以上且未達20 μm,短邊長度未達20 μm,高度為5 μm以下,且包含Si及Al之至少1種元素之第2凸部之數量為0.25個/cm2 以下。 (4)如(3)記載之積層基板,其中凸部中,第1凸部及第2凸部以外之凸部,即長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下之第3凸部之數量為0.30個/cm2 以下。 (5)如(1)~(4)中任一項記載之積層基板,其中凸部之數量為0.20個/cm2 以下。 (6)如(1)~(5)中任一項記載之積層基板,其中凹部之數量為0.07個/cm2 以下。 (7)一種電子裝置之製造方法,其具備如下步驟:於(1)~(6)中任一項記載之積層基板之聚醯亞胺樹脂層之與支持基材相反側之表面上,形成電子裝置用構件,而獲得附電子裝置用構件之積層基板的構件形成步驟;及 自附電子裝置用構件之積層基板,獲得具有聚醯亞胺樹脂層及電子裝置用構件之電子裝置的分離步驟。 (8)一種積層基板之製造方法,其係(1)~(6)中任一項記載之積層基板之製造方法,且 將薄膜狀之聚醯亞胺樹脂層與支持基材貼合,而製造積層基板。 (9)如(8)記載之積層基板之製造方法,其中將具備薄膜狀之聚醯亞胺樹脂層、與配置於聚醯亞胺樹脂層之一表面上之保護膜的積層薄膜與支持基材貼合,獲得依序配置有支持基材、聚醯亞胺樹脂層及保護膜之積層體,並將保護膜自積層體剝離,而製造積層基板。 [發明之效果](1) A laminated substrate comprising a supporting substrate made of glass, and a polyimide resin layer arranged on the supporting substrate, and on the surface of the polyimide resin layer opposite to the supporting substrate, The length of the long side is 3 μm or more and less than 50 μm, the length of the short side is less than 50 μm, and the number of protrusions with a height of 5 μm or less is 0.60/cm 2 or less. The length of the long side is 3 to 1000 μm, the length of the short side is 20 μm, and the number of recesses with a depth of 1 μm or less is 0.15/cm 2 or less. (2) The multilayer substrate as described in (1), in which the long side length is 10 μm or more and less than 50 μm in the convex portion, the short side length is less than 50 μm, and the height is less than 1 μm, and contains Na and Cl The number of first protrusions of at least one element is 0.15/cm 2 or less. (3) The multilayer substrate as described in (1) or (2), in which the long side length is 3 μm or more and less than 20 μm in the convex portion, the short side length is less than 20 μm, and the height is 5 μm or less, and includes The number of second protrusions of at least one element of Si and Al is 0.25/cm 2 or less. (4) The multilayer substrate as described in (3), wherein among the convex portions, the convex portions other than the first convex portion and the second convex portion, that is, the length of the long side is 3 μm or more and less than 50 μm, and the length of the short side is less than 50 μm, the number of third protrusions with a height of 1 μm or less is 0.30/cm 2 or less. (5) The multilayer substrate according to any one of (1) to (4), wherein the number of convex portions is 0.20 pcs/cm 2 or less. (6) The multilayer substrate according to any one of (1) to (5), wherein the number of recesses is 0.07/cm 2 or less. (7) A method of manufacturing an electronic device, comprising the steps of: forming on the surface of the polyimide resin layer of the multilayer substrate described in any one of (1) to (6) on the opposite side of the support substrate The component forming step of obtaining a multilayer substrate with a component for an electronic device; and a step of separating the multilayer substrate with a component for an electronic device to obtain an electronic device having a polyimide resin layer and the component for an electronic device . (8) A method for manufacturing a multilayer substrate, which is the method for manufacturing a multilayer substrate as described in any one of (1) to (6), in which a film-like polyimide resin layer is bonded to a supporting base material, and Manufacture multilayer substrates. (9) The method for manufacturing a multilayer substrate as described in (8), wherein a multilayer film and a supporting base are provided with a polyimide resin layer in the form of a film, and a protective film arranged on one surface of the polyimide resin layer. The materials are bonded together to obtain a laminate in which the support substrate, the polyimide resin layer, and the protective film are arranged in this order, and the protective film is peeled from the laminate to produce a laminate substrate. [Effects of Invention]

根據本發明,可提供一種能製造耐久性優良之電子裝置(例如有機EL顯示裝置)之具備聚醯亞胺樹脂層之積層基板。 又,根據本發明,可提供一種電子裝置之製造方法及積層基板之製造方法。According to the present invention, it is possible to provide a multilayer substrate provided with a polyimide resin layer that can manufacture electronic devices with excellent durability (for example, organic EL display devices). Furthermore, according to the present invention, it is possible to provide a method of manufacturing an electronic device and a method of manufacturing a multilayer substrate.

以下,參照圖式,針對本發明之實施形態進行說明。但,以下之實施形態係用以說明本發明之例示者,本發明不限於以下所示之實施形態。另,可不脫離本發明之範圍,對以下之實施形態加入各種變化及置換。 使用「~」表示之數值範圍意指將「~」前後所記載之數值作為下限值及上限值包含之範圍。Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the following embodiments are examples for explaining the present invention, and the present invention is not limited to the following embodiments. In addition, various changes and substitutions can be added to the following embodiments without departing from the scope of the present invention. The numerical range indicated by "~" means the range that includes the numerical value before and after "~" as the lower limit and the upper limit.

作為本發明之積層基板之特徵點,可例舉調整聚醯亞胺樹脂層表面之特定形狀之凸部及凹部之數量之點。 本發明者等人發現,使用專利文獻1所記載之先前之積層基板製造電子裝置時,作為致使所得之電子裝置之耐久性較差之原因,與聚醯亞胺樹脂層表面之特定形狀之凸部及凹部有關。製造有機EL顯示裝置等電子裝置時,藉由濺鍍等形成薄層,但此時,若於聚醯亞胺樹脂層上存在特定形狀之凸部及凹部,則無法形成均一之層,而易成為缺陷,結果,致使所得之電子裝置之性能較差。因此,藉由調整上述凸部及凹部之數量,可獲得期望之效果。As a characteristic point of the laminated substrate of the present invention, the point of adjusting the number of convex parts and concave parts of a specific shape on the surface of the polyimide resin layer can be exemplified. The inventors of the present invention found that when electronic devices are manufactured using the previous multilayer substrate described in Patent Document 1, the reason for the poor durability of the resulting electronic devices is related to the specific shape of the convex portions on the surface of the polyimide resin layer. Related to the recess. When manufacturing electronic devices such as organic EL display devices, a thin layer is formed by sputtering or the like. However, if there are protrusions and recesses of a specific shape on the polyimide resin layer, a uniform layer cannot be formed, which is easy It becomes a defect, and as a result, the performance of the obtained electronic device is poor. Therefore, by adjusting the number of the above-mentioned protrusions and recesses, the desired effect can be obtained.

<積層基板> [積層基板之第1例] 圖1係模式性顯示本發明之實施形態之積層基板之第1例之剖視圖。 第1例之積層基板10具備玻璃製之支持基材12、與配置於支持基材12上之聚醯亞胺樹脂層14。 圖1中,聚醯亞胺樹脂層14之面積小於支持基材12之表面12a,而未設置於支持基材12之表面12a全域,但不限於該形態,亦可於支持基材12之表面12a全域配置聚醯亞胺樹脂層14。<Multilayer substrates> [First example of multilayer substrate] FIG. 1 is a cross-sectional view schematically showing the first example of the multilayer substrate of the embodiment of the present invention. The laminated substrate 10 of the first example includes a supporting base 12 made of glass and a polyimide resin layer 14 arranged on the supporting base 12. In FIG. 1, the area of the polyimide resin layer 14 is smaller than the surface 12a of the support substrate 12, and is not provided on the entire surface 12a of the support substrate 12. However, it is not limited to this form and can also be on the surface of the support substrate 12. 12a, the polyimide resin layer 14 is disposed all over the area.

支持基材12為支持聚醯亞胺樹脂層14之構件,作為補強聚醯亞胺樹脂層14之補強板發揮功能。又,支持基材12亦作為搬送積層基板10時之搬送基板發揮功能。 於積層基板10中,若對剝離支持基材12與聚醯亞胺樹脂層14之方向施加力,則分離成支持基材12與聚醯亞胺樹脂層14。 雖於下文詳述,但聚醯亞胺樹脂層14為用以製造電子裝置所用之基板。即,於聚醯亞胺樹脂層14之表面14a,形成有構成電子裝置之電晶體、線圈及電阻等電子元件以及信號線等。The support base 12 is a member that supports the polyimide resin layer 14 and functions as a reinforcing plate for reinforcing the polyimide resin layer 14. In addition, the supporting base 12 also functions as a transport substrate when transporting the build-up substrate 10. In the laminated substrate 10, when a force is applied to the direction in which the support base 12 and the polyimide resin layer 14 are peeled off, the support base 12 and the polyimide resin layer 14 are separated into the support base 12 and the polyimide resin layer 14. Although described in detail below, the polyimide resin layer 14 is a substrate used for manufacturing electronic devices. That is, on the surface 14 a of the polyimide resin layer 14, electronic components such as transistors, coils, resistors, etc., and signal lines that constitute electronic devices are formed.

圖2係本發明之實施形態之積層基板10中之聚醯亞胺樹脂層14之表面14a之放大剖視圖。 於聚醯亞胺樹脂層14之表面14a,圖2所示之長邊之長度為3 μm以上且未達50 μm,短邊之長度未達50 μm,且高度為5 μm以下之凸部16之數量為0.60個/cm2 以下。另,作為凸部16之短邊長度及高度之下限,可例舉超0 μm。又,作為後述之第1凸部~第3凸部之短邊長度及高度之下限,亦可例舉超0 μm。 其中,基於可製造耐久性更優良之電子裝置之點(以下,亦簡稱為「本發明之效果更佳之點」),凸部16之數量較佳為0.20個/cm2 以下。作為下限,可例舉0.001個/cm2 。 另,個/cm2 表示聚醯亞胺樹脂層14之表面14a之每1 cm2 之凸部之數量。 作為上述凸部16之數量之算出方法,首先,使用Orbotech公司製離線缺陷檢查系統(FPI-6000系列)(型號:FPI6090D),取得聚醯亞胺樹脂層14之表面14a全域之所有缺陷之圖像資料及座標資料。接著,根據取得之資料算出缺陷之長邊長度及短邊長度。其後,就所有缺陷,以Olympus公司製顯微鏡(OLE4100)進行觀察,根據與平坦部之差量算出缺陷之高度。其後,根據所得之各缺陷之長邊長度、短邊長度及高度之資料,算出特定範圍內之凸部之數量。2 is an enlarged cross-sectional view of the surface 14a of the polyimide resin layer 14 in the laminated substrate 10 of the embodiment of the present invention. On the surface 14a of the polyimide resin layer 14, as shown in FIG. 2, the length of the long side is 3 μm or more and less than 50 μm, the length of the short side is less than 50 μm, and the height of the convex part 16 is less than 5 μm. The quantity is less than 0.60/cm 2. In addition, as the lower limit of the shorter side length and height of the convex portion 16, over 0 μm can be mentioned. In addition, as the lower limit of the shorter side length and height of the first to third convex portions described later, over 0 μm may be exemplified. Among them, based on the point that an electronic device with better durability can be manufactured (hereinafter, also referred to as "the point of better effect of the present invention"), the number of the convex portions 16 is preferably 0.20/cm 2 or less. As the lower limit, 0.001 pieces/cm 2 may be mentioned. In addition, the number/cm 2 represents the number of convex portions per 1 cm 2 of the surface 14 a of the polyimide resin layer 14. As a method of calculating the number of the above-mentioned protrusions 16, firstly, an offline defect inspection system (FPI-6000 series) (model: FPI6090D) manufactured by Orbotech is used to obtain a map of all defects on the surface 14a of the polyimide resin layer 14 Like data and coordinate data. Then, calculate the length of the long side and the length of the short side of the defect based on the acquired data. After that, all the defects were observed with a microscope (OLE4100) manufactured by Olympus, and the height of the defects was calculated from the difference with the flat part. After that, calculate the number of protrusions in a specific range based on the obtained long-side length, short-side length and height data of each defect.

另,基於圖3,針對凸部16之長邊長度及短邊長度進行說明。 圖3係自聚醯亞胺樹脂層14之表面14a之法線方向觀察凸部16之圖。圖3中,凸部16為橢圓形狀。 接著,如圖3所示,將外切於凸部16之外周之平行之2條切線中,以切線距離最大之方式選擇之平行的2條切線之距離設為長邊長度L,將與給定長度L之平行之2條切線正交,且外切於凸部16之外周之平行的2條切線中,以切線間距離最大之方式選擇之平行的2條切線之切線間距離設為短邊長度S。 另,圖3中,自聚醯亞胺樹脂層14之表面14a之法線方向觀察時之凸部16之形狀為橢圓形狀,但凸部16不限於該形態,亦可為正圓狀、多角形狀、無固定形狀。In addition, based on FIG. 3, the length of the long side and the length of the short side of the convex portion 16 will be described. 3 is a view of the convex portion 16 viewed from the normal direction of the surface 14a of the polyimide resin layer 14. As shown in FIG. In FIG. 3, the convex portion 16 has an elliptical shape. Next, as shown in Fig. 3, among the two parallel tangents circumscribed to the outer circumference of the convex portion 16, the distance between the two parallel tangents selected in such a way that the tangent distance is the largest is set as the long side length L. The two parallel tangents of a fixed length L are orthogonal and circumscribed to the outer circumference of the convex portion 16. Among the two parallel tangents, the distance between the tangents of the parallel two tangents is selected to be the shortest distance between the tangents. Side length S. In addition, in FIG. 3, the shape of the convex portion 16 when viewed from the normal direction of the surface 14a of the polyimide resin layer 14 is an elliptical shape, but the convex portion 16 is not limited to this shape, and may also be round or polygonal. Shape, no fixed shape.

又,就凸部16所含之元素,可使用SEM-EDX(掃描型電子顯微鏡/能量分散型X射線分光法)測定。即,可以SEM觀察聚醯亞胺樹脂層14之表面14a之特定之凸部16,以EDX特定該凸部16所含之元素。 作為凸部16所含之元素之具體例,可例舉C、O、Si、Al、Na、Cl、Fe、S、Mg、Ca、Ti、Zn、Cr、Ni及Cu。 另,聚醯亞胺樹脂層14本身亦包含C及O元素,但凸部16中是否包含C及O元素係與凸部16以外之位置之聚醯亞胺樹脂層14之C及O之含量進行比較而檢測。In addition, the elements contained in the convex portion 16 can be measured using SEM-EDX (Scanning Electron Microscope/Energy Dispersive X-ray Spectroscopy). That is, the specific convex portion 16 on the surface 14a of the polyimide resin layer 14 can be observed by SEM, and the elements contained in the convex portion 16 can be specified by EDX. Specific examples of the elements contained in the protrusions 16 include C, O, Si, Al, Na, Cl, Fe, S, Mg, Ca, Ti, Zn, Cr, Ni, and Cu. In addition, the polyimide resin layer 14 itself also contains C and O elements, but does the convex portion 16 contain C and O elements and the content of C and O in the polyimide resin layer 14 at positions other than the convex portion 16 Compare and test.

基於使本發明之效果更佳之點,上述凸部中,長邊長度為10 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下,且包含Na及Cl之至少1種元素之第1凸部(以下,亦簡稱為「第1凸部」)之數量較佳為0.15個/cm2 以下,更佳為0.10個/cm2 以下,更佳為0.07個/cm2 以下,進而更佳為0.05個/cm2 以下。作為下限,可例舉0.001個/cm2 。 雖第1凸部產生之原因詳情不明,但根據所含之元素之種類,推測係來源於人體之汗液者。 第1凸部中亦可包含Na及Cl以外之元素,可例舉例如C及O。Based on the point of making the effect of the present invention better, in the above-mentioned protrusions, the long side length is 10 μm or more and less than 50 μm, the short side length is less than 50 μm, the height is less than 1 μm, and contains at least 1 of Na and Cl. The number of the first protrusions (hereinafter, also referred to as "first protrusions") of the element is preferably 0.15/cm 2 or less, more preferably 0.10/cm 2 or less, and even more preferably 0.07/cm 2 Below, it is still more preferable to be 0.05 pieces/cm 2 or less. As the lower limit, 0.001 pieces/cm 2 may be mentioned. Although the details of the cause of the first protrusion are unknown, based on the types of elements it contains, it is presumed to be derived from human sweat. Elements other than Na and Cl may be contained in the first protrusion, and examples include C and O.

基於本發明之效果更佳之點,上述凸部中,長邊長度為3 μm以上且未達20 μm,短邊長度未達20 μm,高度為5 μm以下,且包含Si及Al之至少1種元素之第2凸部(以下,亦簡稱為「第2凸部」)之數量較佳為0.25個/cm2 以下,更佳為0.20個/cm2 以下,進而較佳為0.15個/cm2 以下,尤佳為0.10個/cm2 以下,進而更佳為0.07個/cm2 以下。作為下限,可例舉0.001個/cm2 。 雖第2凸部產生之原因詳情不明,但根據所含元素之種類,推測係來源於玻璃製之支持基材者。 第2凸部中亦可包含Si及Al以外之元素,可例舉例如C及O。Based on the better effect of the present invention, in the above-mentioned protrusions, the long side length is 3 μm or more and less than 20 μm, the short side length is less than 20 μm, and the height is less than 5 μm, and contains at least one of Si and Al The number of second protrusions of the element (hereinafter also referred to as "second protrusions") is preferably 0.25/cm 2 or less, more preferably 0.20/cm 2 or less, and still more preferably 0.15/cm 2 Below, 0.10 pieces/cm 2 or less are particularly preferable, and 0.07 pieces/cm 2 or less are still more preferable. As the lower limit, 0.001 pieces/cm 2 may be mentioned. Although the details of the cause of the second protrusion are unknown, it is estimated that it is derived from a glass supporting substrate based on the types of elements contained. Elements other than Si and Al may be contained in the second convex portion, and examples include C and O.

基於本發明之效果更佳之點,上述凸部中,第1凸部及第2凸部以外之凸部,即長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下之第3凸部(以下,亦簡稱為「第3凸部」)之數量較佳為0.30個/cm2 以下,更佳為0.25個/cm2 以下,進而更佳為0.20個/cm2 以下,尤佳為0.15個/cm2 以下。 如上所述,第3凸部為不符合第1凸部及第2凸部之任一者之特定大小之凸部。 作為第3凸部之數量之下限,可例舉0.001個/cm2 。 作為第3凸部中所含之元素之種類之具體例,可例舉Ca、Fe、Ti、Cr、Ni及Cu,第3凸部較佳包含上文所例舉之元素中之至少一者。 雖第3凸部產生之原因詳情不明,但推測為環境中包含上文所例示之元素之微粒、SUS等之金屬粉。Based on the better effect of the present invention, among the above-mentioned protrusions, the protrusions other than the first protrusion and the second protrusion, that is, the length of the long side is 3 μm or more and less than 50 μm, and the length of the short side is less than 50 μm. a height of 1 μm or less of the third projecting portion (hereinafter, also referred to as the "third protrusion") of the amount is preferably 0.30 / cm 2 or less, more preferably 0.25 pieces / cm 2 or less, and further more preferably 0.20 Pieces/cm 2 or less, particularly preferably 0.15 pieces/cm 2 or less. As described above, the third convex portion is a convex portion that does not conform to the specific size of any one of the first convex portion and the second convex portion. As the lower limit of the number of the third protrusions, 0.001/cm 2 may be mentioned. Specific examples of the types of elements contained in the third protrusion include Ca, Fe, Ti, Cr, Ni, and Cu. The third protrusion preferably contains at least one of the elements listed above. . Although the details of the cause of the third protrusion are unknown, it is presumed that the environment contains fine particles of the elements exemplified above, and metal powders such as SUS.

於聚醯亞胺樹脂層14之表面14a中,圖2所示之長邊長度為3~1000 μm,短邊長度為20 μm以下,且深度為1 μm以下之凹部18之數量為0.15個/cm2 。另,作為凹部18之短邊長度及深度之下限,可例舉超0 μm。 其中,基於本發明之效果更佳之點,凹部18之數量較佳為0.07個/cm2 以下。作為下限,可例舉0.001個/cm2 。 作為上述凹部18之數量之算出方法,使用Orbotech公司製離線缺陷檢查系統(FPI-6000系列(型號:FPI609D)),取得聚醯亞胺樹脂層14之表面14a全域之所有缺陷之圖像資料及座標資料。接著,根據取得之資料,算出缺陷之長邊長度及短邊長度。其後,就所有缺陷,以Olympus公司製雷射顯微鏡(OLE4100)進行觀察,根據與平坦部之差量算出缺陷之深度。其後,根據所得各缺陷之長邊長度、短邊長度及深度之資料,算出特定範圍內之凹部之數量。On the surface 14a of the polyimide resin layer 14, the length of the long side shown in FIG. 2 is 3 to 1000 μm, the length of the short side is 20 μm or less, and the number of recesses 18 with a depth of 1 μm or less is 0.15/ cm 2 . In addition, as the lower limit of the short side length and depth of the recess 18, over 0 μm can be mentioned. Among them, based on the better effect of the present invention, the number of recesses 18 is preferably 0.07/cm 2 or less. As the lower limit, 0.001 pieces/cm 2 may be mentioned. As a method for calculating the number of recesses 18, an offline defect inspection system (FPI-6000 series (model: FPI609D)) manufactured by Orbotech was used to obtain image data of all defects in the entire surface 14a of the polyimide resin layer 14 and Coordinate data. Then, calculate the length of the long side and the length of the short side of the defect based on the acquired data. After that, all the defects were observed with a laser microscope (OLE4100) manufactured by Olympus, and the depth of the defect was calculated from the difference with the flat part. Then, according to the obtained long-side length, short-side length and depth data of each defect, the number of recesses in a specific range is calculated.

凹部18之長邊長度及短邊長度藉由與上述之凸部16之長邊長度及短邊長度同樣之程序而定義。 具體而言,將外切於凹部18之外周之平行之2條切線中,以切線間距離最大之方式選擇之平行的2條切線之距離設為長邊長度L,將與給定長度L之平行的2條切線正交,且外切於凹部18之外周之平行的2條切線中,以切線間距離最大之方式選擇之平行的2條切線之切線間距離設為短邊長度S。 另,自聚醯亞胺樹脂層14之表面14a之法線方向觀察時之凹部18之形狀未特別限制,亦可為正圓狀、橢圓形狀、多角形狀、無固定形狀。The length of the long side and the length of the short side of the concave portion 18 are defined by the same procedure as the length of the long side and the length of the short side of the convex portion 16 described above. Specifically, among the two parallel tangents circumscribed to the outer circumference of the recess 18, the distance between the two parallel tangents selected in such a way that the distance between the tangents is the largest is the long side length L, and the distance between the two parallel tangents and the given length L The two parallel tangents are orthogonal to each other and circumscribed to the outer circumference of the recess 18. The distance between the tangents of the two parallel tangents is selected to maximize the distance between the tangents as the short side length S. In addition, the shape of the recess 18 when viewed from the normal direction of the surface 14a of the polyimide resin layer 14 is not particularly limited, and may be a perfect circle, an ellipse, a polygonal shape, or an unfixed shape.

較佳為於聚醯亞胺樹脂層14之表面14a中不存在大於凸部16之凸部。大於凸部16之凸部意指長邊長度為50 μm以上,或短邊長度為50 μm以上,或高度超5 μm之凸部。 又,較佳為於聚醯亞胺樹脂層14之表面14a中不存在大於凹部18之凹部。大於凹部18之凹部意指長邊長度超1000 μm,或短邊之長度超20 μm,或深度超1 μm之凹部。Preferably, there is no convex portion larger than the convex portion 16 on the surface 14 a of the polyimide resin layer 14. A convex part larger than the convex part 16 means a convex part having a long side length of 50 μm or more, or a short side length of 50 μm or more, or a height exceeding 5 μm. In addition, it is preferable that the surface 14a of the polyimide resin layer 14 does not have a concave portion larger than the concave portion 18. A concave portion larger than the concave portion 18 means a concave portion whose long side length exceeds 1000 μm, or the short side length exceeds 20 μm, or the depth exceeds 1 μm.

[積層基板之第1例之製造方法] 作為製造第1例之積層基板之方法,只要形成成為上述之特定凸部及凹部之數量的聚醯亞胺樹脂層則無特別限制,但較佳為使聚醯亞胺樹脂層積層於支持基材之表面上之方法。 另,較佳為使聚醯亞胺樹脂層積層於支持基材之表面上之前,於支持基材之表面上塗佈眾所周知之矽烷偶合劑,其後,於塗佈有矽烷偶合劑之支持基材之表面上積層聚醯亞胺樹脂層。[Manufacturing method of the first example of multilayer substrate] As the method of manufacturing the laminated substrate of the first example, there is no particular limitation as long as the polyimide resin layer is formed in the number of the above-mentioned specific protrusions and recesses, but it is preferable to laminate the polyimide resin on the support base. The method on the surface of the material. In addition, it is preferable to coat the well-known silane coupling agent on the surface of the supporting substrate before laminating the polyimide resin on the surface of the supporting substrate, and then to coat the supporting substrate with the silane coupling agent. The polyimide resin layer is laminated on the surface of the material.

又,作為積層基板之製造方法,更佳為將薄膜狀之聚醯亞胺樹脂層與支持基材貼合,而製造積層基板之方法,進而更佳為如下之方法:將具備薄膜狀之聚醯亞胺樹脂層與配置於聚醯亞胺樹脂層之一表面上之保護膜之積層薄膜與支持基材貼合,獲得依序配置有支持基材、聚醯亞胺樹脂層及保護膜之積層體,並將保護膜自積層體剝離,而製造積層基板(以下,亦稱為「方法X」)。 尤其,使用保護膜之方法中,由於由保護膜保護聚醯亞胺樹脂層之與支持基材相反側之表面,故於製造積層基板時,抑制異物附著於聚醯亞胺樹脂層之與支持基材相反側之表面,或產生表面之損傷,結果,容易獲得期望之積層基板。 將薄膜狀之聚醯亞胺樹脂層與支持基材貼合時,基於生產性優良之點,較佳以捲對捲(roll to roll)方式實施。In addition, as a method of manufacturing a multilayer substrate, it is more preferable to bond a film-like polyimide resin layer and a supporting base material to produce a multilayer substrate, and even more preferably the following method: The laminated film of the amide resin layer and the protective film arranged on the surface of one of the polyimide resin layers is bonded to the supporting substrate to obtain a supporting substrate, a polyimide resin layer and a protective film arranged in sequence The laminated body is peeled off from the laminated body, and a laminated substrate is manufactured (hereinafter, also referred to as "method X"). In particular, in the method of using a protective film, since the surface of the polyimide resin layer opposite to the supporting base material is protected by the protective film, it prevents foreign matter from adhering to the polyimide resin layer during the manufacture of the laminated substrate. The surface on the opposite side of the base material may be damaged. As a result, it is easy to obtain the desired multilayer substrate. When the film-like polyimide resin layer is bonded to the supporting substrate, it is preferable to implement it in a roll to roll method based on the excellent productivity.

作為將凸部及凹部之數量調整為特定範圍內之方式,可例舉調整聚醯亞胺樹脂層之形成條件之方法,或對後述之積層基板實施清洗處理之方法。 另,較佳為對積層基板實施加熱處理,其後,對聚醯亞胺樹脂之與支持基材相反側之表面實施清洗處理。其中,較佳為以上述方法X獲得積層基板後,對積層基板實施加熱處理,其後,對聚醯亞胺樹脂層之與支持基材相反側之表面實施清洗處理。 藉由實施加熱處理,去除聚醯亞胺樹脂層中及表面上之揮發成分,而可抑制製造電子裝置時產生揮發成分。尤其,方法X中以捲對捲方式製造積層基板時,由於在貼合時無法提高溫度,揮發成分易殘留於聚醯亞胺樹脂層中,故較佳為實施上述加熱處理。 又,藉由清洗聚醯亞胺樹脂層之與支持基材相反側之表面,可去除可能成為凸部之異物或成為產生凹部之原因之異物。As a method of adjusting the number of protrusions and recesses within a specific range, a method of adjusting the formation conditions of the polyimide resin layer, or a method of performing a cleaning treatment on a build-up substrate described later can be exemplified. In addition, it is preferable to perform a heat treatment on the multilayer substrate, and then to perform a cleaning treatment on the surface of the polyimide resin on the side opposite to the supporting base material. Among them, it is preferable that after obtaining the multilayer substrate by the above-mentioned method X, heat treatment is performed on the multilayer substrate, and thereafter, the surface of the polyimide resin layer on the opposite side of the support substrate is subjected to cleaning treatment. By performing heat treatment, volatile components in and on the surface of the polyimide resin layer are removed, and the generation of volatile components during the manufacture of electronic devices can be suppressed. Particularly, when the laminated substrate is manufactured by the roll-to-roll method in the method X, since the temperature cannot be increased during bonding and volatile components tend to remain in the polyimide resin layer, it is preferable to perform the above-mentioned heat treatment. In addition, by washing the surface of the polyimide resin layer on the side opposite to the support base material, it is possible to remove the foreign matter that may become the convex portion or the foreign matter that may cause the concave portion.

另,作為方法X中使用之保護膜,較佳為可剝離之樹脂薄膜。 方法X中,剝離保護膜時,為了防止產生靜電,較佳使用離子化器等靜電去除裝置進行除電。若產生靜電,則有時異物會附著於聚醯亞胺樹脂層上,藉由使用靜電去除裝置可抑制上述異物之附著。 另,上文中,已敘述使用靜電去除裝置之方法,但亦可實施提高濕度(濕度:70%以上),而抑制產生靜電之方法。 藉由實施上述處理,尤其可減少上述之第1凸部或第3凸部之數量。In addition, as the protective film used in the method X, a peelable resin film is preferable. In the method X, in order to prevent the generation of static electricity when the protective film is peeled off, it is preferable to use a static electricity removing device such as an ionizer to remove electricity. If static electricity is generated, foreign matter may adhere to the polyimide resin layer. By using a static electricity removal device, the attachment of the foreign matter can be suppressed. In addition, in the above, the method of using the static electricity removal device has been described, but it is also possible to implement a method of increasing the humidity (humidity: 70% or more) to suppress the generation of static electricity. By performing the above-mentioned treatment, the number of the above-mentioned first or third convex parts can be reduced in particular.

實施上述加熱處理時,通常使用加熱裝置。將積層基板配置於加熱裝置時,較佳以於加熱裝置內,聚醯亞胺樹脂朝下之方式配置積層基板。藉由將聚醯亞胺樹脂層朝下配置,可抑制自加熱裝置內朝積層基板掉落之異物附著於聚醯亞胺樹脂層上。 藉由實施上述處理,尤其可減少上述之第1凸部~第3凸部之數量。When performing the above-mentioned heat treatment, a heating device is usually used. When arranging the multilayer substrate in the heating device, it is preferable to arrange the multilayer substrate in the heating device with the polyimide resin facing downward. By arranging the polyimide resin layer downward, foreign matter falling from the heating device toward the build-up substrate can be prevented from adhering to the polyimide resin layer. By performing the above-mentioned processing, it is possible to reduce the number of the above-mentioned first to third convex parts in particular.

又,作為使用之加熱裝置之具體例,可例舉熱風加熱裝置及紅外線加熱裝置。其中,使用熱風加熱裝置之情形時,有時異物亦因熱風而於聚醯亞胺樹脂之與支持基材相反側之表面移動,從而產生凹部,故基於減少凹部數量之點,較佳使用紅外線加熱裝置。In addition, as specific examples of the heating device used, a hot air heating device and an infrared heating device can be cited. Among them, when using a hot-air heating device, sometimes foreign matter may also move on the surface of the polyimide resin on the opposite side of the support substrate due to the hot air, resulting in recesses. Therefore, in order to reduce the number of recesses, it is better to use infrared rays. heating equipment.

作為加熱處理之條件,加熱溫度較佳為450~550°C,加熱時間較佳為5分鐘~1小時,升溫速率較佳為1~100°C/min。As the conditions of the heating treatment, the heating temperature is preferably 450 to 550°C, the heating time is preferably 5 minutes to 1 hour, and the heating rate is preferably 1 to 100°C/min.

又,清洗聚醯亞胺樹脂層之與支持基材相反側之表面時,較佳使用刷子進行清洗。藉由實施上述處理,尤其可減少上述之第2凸部及第3凸部之數量。 作為清洗處理,可為乾清洗及濕清洗之任一種清洗,較佳為濕清洗。作為實施濕清洗時之洗滌劑之具體例,可例舉鹼水溶液。 濕清洗時,較佳使用刷子。作為使用之刷子之具體例,可例舉輥刷及盤刷。其中,使用輥刷之情形時,有時輥刷之刷毛末梢之末端部擦拭聚醯亞胺樹脂層之與支持基材相反側之表面,而產生凹部,故基於減少凹部數量之點,較佳使用盤刷。 使用刷子時之轉速未特別限制,但使用盤刷之情形時,可例舉300 rpm左右。In addition, when cleaning the surface of the polyimide resin layer on the side opposite to the supporting substrate, it is preferable to use a brush for cleaning. By performing the above-mentioned processing, the number of the above-mentioned second and third convex parts can be reduced in particular. As the cleaning treatment, either dry cleaning or wet cleaning can be used, and wet cleaning is preferred. As a specific example of the detergent when performing wet cleaning, an aqueous alkali solution can be mentioned. For wet cleaning, it is better to use a brush. As a specific example of the brush used, a roller brush and a disk brush can be mentioned. Among them, when a roller brush is used, sometimes the end of the bristle tip of the roller brush wipes the surface of the polyimide resin layer on the opposite side of the support substrate to produce recesses. Therefore, it is preferable to reduce the number of recesses. Use a disk brush. The rotation speed when using the brush is not particularly limited, but when using a disc brush, it can be about 300 rpm.

可一面搬送積層基板一面實施清洗處理。作為搬送速度,可例舉1~10 m/min。 清洗處理時,可藉由夾輥等固定機構固定積層基板。此時,基於減少凹部數量之點,較佳以固定機構不與聚醯亞胺樹脂層之與支持基材相反側之表面接觸之方式,固定積層基板。具體而言,較佳使用僅與支持基材接觸而固定積層基板之固定機構。 另,為了實施上述清洗處理,可對聚醯亞胺樹脂層之與支持基材相反側之表面實施電暈處理等親水化處理。藉由實施親水化處理,清洗效果提高。It is possible to carry out cleaning treatment while conveying the multilayer substrate. As the conveying speed, 1 to 10 m/min can be mentioned. During the cleaning process, the multilayer substrate can be fixed by a fixing mechanism such as a nip roller. At this time, in order to reduce the number of recesses, it is preferable to fix the multilayer substrate so that the fixing mechanism does not contact the surface of the polyimide resin layer opposite to the supporting base material. Specifically, it is preferable to use a fixing mechanism that fixes the build-up substrate only in contact with the supporting base material. In addition, in order to perform the above-mentioned cleaning treatment, the surface of the polyimide resin layer on the opposite side of the support substrate may be subjected to a hydrophilization treatment such as corona treatment. By applying hydrophilization treatment, the cleaning effect is improved.

[積層基板之第2例] 圖4係模式性顯示本發明之實施形態之積層基板之第2例之剖視圖。另,圖4所示之第2例之積層基板10中,對與圖1所示之第1例之積層基板10同一之構成物標註同一符號,省略詳細之說明。 第2例之積層基板10與圖1所示之積層基板10相比,除了於支持基材12與聚醯亞胺樹脂層14間具有矽酮樹脂層13外,皆與圖1所示之積層基板10相同。[The second example of multilayer substrate] 4 is a cross-sectional view schematically showing the second example of the multilayer substrate of the embodiment of the present invention. In addition, in the laminated substrate 10 of the second example shown in FIG. 4, the same components as those of the laminated substrate 10 of the first example shown in FIG. 1 are denoted by the same reference numerals, and detailed descriptions are omitted. The laminated substrate 10 of the second example is compared with the laminated substrate 10 shown in FIG. 1, except for the silicone resin layer 13 between the supporting base material 12 and the polyimide resin layer 14, and the laminated substrate 10 shown in FIG. The substrate 10 is the same.

第2例之積層基板10中,依序積層有支持基材12、矽酮樹脂層13、及聚醯亞胺樹脂層14。於支持基材12之表面12a設置有矽酮樹脂層13,於矽酮樹脂層13之表面13a設置有聚醯亞胺樹脂層14。雖矽酮樹脂層13與聚醯亞胺樹脂層14為相同之大小,但與支持基材12之表面12a相比更小。 第2例之積層基板10中,支持基材12及矽酮樹脂層13作為補強聚醯亞胺樹脂層14之補強板發揮功能。In the laminated substrate 10 of the second example, a supporting base 12, a silicone resin layer 13, and a polyimide resin layer 14 are laminated in this order. A silicone resin layer 13 is provided on the surface 12 a of the support base 12, and a polyimide resin layer 14 is provided on the surface 13 a of the silicone resin layer 13. Although the silicone resin layer 13 and the polyimide resin layer 14 have the same size, they are smaller than the surface 12a of the support substrate 12. In the laminated substrate 10 of the second example, the supporting base 12 and the silicone resin layer 13 function as a reinforcing plate for reinforcing the polyimide resin layer 14.

對積層基板10實施加熱處理之情形時,較佳為使支持基材12與矽酮樹脂層13間之密著力大於矽酮樹脂層13與聚醯亞胺樹脂層14間之密著力。此可藉由以加熱處理,使支持基材12之羥基與矽樹脂層13之羥基鍵合等而產生。 其結果,若對剝離支持基材12與聚醯亞胺樹脂層14之方向施加力,則於矽酮樹脂層13與聚醯亞胺樹脂層14間發生剝離。藉此,可將聚醯亞胺樹脂層14分離。When heat treatment is performed on the laminated substrate 10, it is preferable that the adhesion force between the support base 12 and the silicone resin layer 13 be greater than the adhesion force between the silicone resin layer 13 and the polyimide resin layer 14. This can be produced by bonding the hydroxyl groups of the supporting substrate 12 with the hydroxyl groups of the silicone resin layer 13 by heat treatment. As a result, if a force is applied in the direction in which the support base 12 and the polyimide resin layer 14 are peeled off, peeling occurs between the silicone resin layer 13 and the polyimide resin layer 14. Thereby, the polyimide resin layer 14 can be separated.

[積層基板之第2例之製造方法] 製造第2例之積層基板之方法較佳為於聚醯亞胺樹脂層之背面形成矽酮樹脂層之方法。具體而言,較佳為如下方法:將包含硬化性矽酮之硬化性組合物塗佈於薄膜狀之聚醯亞胺樹脂層之背面(與表面14a相反側),對所得之塗膜實施硬化處理獲得矽酮樹脂層後,於矽酮樹脂層之背面(與表面13a相反側之面)積層支持基材,從而製造積層基板。 更詳細而言,製造第2例之積層基板之方法至少具有如下步驟:將硬化性矽酮層形成於聚醯亞胺樹脂層之背面(與表面14a相反側之面),並於聚醯亞胺樹脂層之背面形成矽酮樹脂層之步驟(樹脂層形成步驟);及於矽酮樹脂層之背面(與表面13a相反側之面)積層支持基材之步驟(積層步驟)。以下,針對上述各步驟詳細敘述。[Manufacturing method of the second example of multilayer substrate] The method of manufacturing the laminated substrate of the second example is preferably a method of forming a silicone resin layer on the back of the polyimide resin layer. Specifically, the following method is preferred: a curable composition containing curable silicone is applied to the back surface (the side opposite to the surface 14a) of the polyimide resin layer in the form of a film, and the resulting coating film is cured After the silicone resin layer is obtained by the treatment, a supporting base material is laminated on the back surface of the silicone resin layer (the side opposite to the surface 13a), thereby manufacturing a laminated substrate. In more detail, the method of manufacturing the laminated substrate of the second example has at least the following steps: a curable silicone layer is formed on the back side of the polyimide resin layer (the side opposite to the surface 14a), and then placed on the polyimide resin layer. A step of forming a silicone resin layer on the back side of the amine resin layer (resin layer forming step); and a step of laminating a supporting substrate on the back side of the silicone resin layer (the side opposite to the surface 13a) (layering step). Hereinafter, the above-mentioned steps will be described in detail.

樹脂層形成步驟係將硬化性矽酮層形成於聚醯亞胺樹脂層之背面,而於聚醯亞胺樹脂層之背面形成矽酮樹脂層之步驟。藉由本步驟,獲得依序具備聚醯亞胺樹脂層與矽酮樹脂層之附矽酮樹脂層之基板。 附矽酮樹脂層之基板可以於捲繞成捲狀之聚醯亞胺樹脂層之背面形成矽酮樹脂層後,再次捲繞成捲狀之所謂之捲對捲方式製造,從而生產效率優良。 本步驟中,為了於聚醯亞胺樹脂層之背面形成硬化性矽酮層,將上述之硬化性組合物塗佈於聚醯亞胺樹脂層之背面。接著,較佳對硬化性矽酮層實施硬化處理,藉此形成硬化層。 作為於聚醯亞胺樹脂層之背面塗佈硬化性組合物之方法之具體例,可例舉噴塗法、模塗法、旋塗法、浸漬塗佈法、輥塗法、棒塗法、網版印刷法及凹版印刷塗佈法。 接著,使塗佈於聚醯亞胺樹脂層之背面之硬化性矽酮硬化,形成矽酮樹脂層。The resin layer forming step is a step of forming a curable silicone layer on the back of the polyimide resin layer, and forming a silicone resin layer on the back of the polyimide resin layer. Through this step, a substrate with a silicone resin layer including a polyimide resin layer and a silicone resin layer in sequence is obtained. The substrate with the silicone resin layer can be manufactured by the so-called roll-to-roll method in which the silicone resin layer is formed on the back of the polyimide resin layer wound into a roll shape, and the production efficiency is excellent. In this step, in order to form a curable silicone layer on the back surface of the polyimide resin layer, the aforementioned curable composition is applied to the back surface of the polyimide resin layer. Next, it is preferable to perform a hardening treatment on the hardenable silicone layer, thereby forming a hardened layer. Specific examples of the method of coating the curable composition on the back surface of the polyimide resin layer include spray coating, die coating, spin coating, dip coating, roll coating, bar coating, and mesh coating. Plate printing method and gravure printing coating method. Next, the curable silicone coated on the back surface of the polyimide resin layer is cured to form a silicone resin layer.

用以形成矽酮樹脂層之硬化方法未特別限定,根據使用之硬化性矽酮之種類適當地實施最佳之處理。例如,使用縮合反應型矽酮及附加反應型矽酮之情形時,作為硬化處理,較佳為熱硬化處理。 熱硬化處理之條件係於聚醯亞胺樹脂層之耐熱性之範圍內實施,例如,熱硬化之溫度條件較佳為50~400°C,更佳為100~300°C。加熱時間較佳為10~300分鐘,更佳為20~120分鐘。 關於矽酮樹脂層13於下文進行說明。The curing method for forming the silicone resin layer is not particularly limited, and the best treatment is appropriately performed according to the type of curable silicone used. For example, in the case of using a condensation reaction type silicone and an additional reaction type silicone, as the hardening treatment, a thermal hardening treatment is preferable. The conditions of the thermal curing treatment are implemented within the range of the heat resistance of the polyimide resin layer. For example, the temperature conditions of the thermal curing are preferably 50-400°C, more preferably 100-300°C. The heating time is preferably 10 to 300 minutes, more preferably 20 to 120 minutes. The silicone resin layer 13 will be described below.

積層步驟為於矽酮樹脂層之表面積層支持基材之步驟。作為將支持基材積層於矽酮樹脂層之背面上之方法之具體例,可例舉於常壓環境下在矽酮樹脂層之背面上重疊支持基材之方法。亦可視需要於矽樹脂層之背面上重疊支持基材後,使用輥或按壓件將支持基材壓接於矽酮樹脂層。藉由滾動或按壓之壓接,相對容易地去除混入至矽酮樹脂層與支持基材間之氣泡,因而較佳。 若利用真空層壓法或真空按壓法進行壓接,則可抑制氣泡之混入,且實現良好密著,因而較佳。藉由於真空下進行壓接,還具有即使於微小氣泡殘留之情形時,氣泡亦不易因加熱處理而成長之優點。 積層支持基材時,較佳為充分清洗與矽酮樹脂層接觸之支持基材之表面,而於清潔度較高之環境下進行積層。The layering step is a step of supporting the substrate on the surface area of the silicone resin layer. As a specific example of the method of laminating the supporting base material on the back surface of the silicone resin layer, a method of laminating the supporting base material on the back surface of the silicone resin layer in a normal pressure environment can be exemplified. It is also possible to overlap the supporting substrate on the back of the silicone resin layer as needed, and then use a roller or a pressing member to crimp the supporting substrate to the silicone resin layer. Compression bonding by rolling or pressing is relatively easy to remove air bubbles mixed between the silicone resin layer and the supporting substrate, which is preferable. If pressure bonding is performed by a vacuum lamination method or a vacuum pressing method, mixing of bubbles can be suppressed and good adhesion can be achieved, which is preferable. By crimping under vacuum, it also has the advantage that the bubbles are not easy to grow due to heat treatment even when tiny bubbles remain. When laminating the support substrate, it is preferable to thoroughly clean the surface of the support substrate in contact with the silicone resin layer, and to perform the lamination in a relatively clean environment.

另,作為製造第2例之積層基板之方法,尤佳為如下方法:於具備薄膜狀之聚醯亞胺樹脂層與配置於聚醯亞胺樹脂層之一表面上之保護膜之積層薄膜之與保護膜相反側之表面,塗佈包含硬化性矽酮之硬化性組合物,並對所得之塗膜實施硬化處理,獲得矽酮樹脂層後,於矽樹脂層之背面積層支持基材,而獲得依序配置有支持基材、矽酮樹脂層、聚醯亞胺樹脂層及保護膜之積層體,並將保護膜自積層體剝離,而製造積層基板。使用如上所述之保護膜之方法中,由於以保護膜保護聚醯亞胺樹脂層之與支持基材相反側之表面,故製造積層基板時,抑制異物附著於聚醯亞胺樹脂層之與支持基材相反側之表面,或產生表面損傷,結果,容易獲得期望之積層基板。 矽酮樹脂層之製造方法及於矽酮樹脂層之背面積層支持基材之方法如上所述。 又,上文中使用之保護膜可例舉第1例中說明之形態,如第1例中所說明,剝離保護膜時,為了防止產生靜電,較佳使用離子化器等靜電去除裝置除電。 再者,與第1例同樣,較佳對積層基板實施加熱處理,其後,對聚醯亞胺樹脂層之與支持基材相反側之表面實施清洗處理。In addition, as a method for manufacturing the laminated substrate of the second example, the following method is particularly preferable: a laminated film provided with a polyimide resin layer in the form of a film and a protective film arranged on one surface of the polyimide resin layer The surface opposite to the protective film is coated with a curable composition containing curable silicone, and the resulting coating film is cured to obtain a silicone resin layer, and then support the substrate on the back surface of the silicone resin layer, and A laminated body in which a supporting base material, a silicone resin layer, a polyimide resin layer, and a protective film are arranged in this order is obtained, and the protective film is peeled from the laminated body to manufacture a laminated substrate. In the method of using the protective film as described above, since the protective film protects the surface of the polyimide resin layer on the side opposite to the supporting base material, it prevents foreign matter from adhering to the polyimide resin layer when manufacturing the multilayer substrate. The surface on the opposite side of the substrate is supported, or surface damage occurs. As a result, it is easy to obtain the desired multilayer substrate. The manufacturing method of the silicone resin layer and the method of supporting the substrate on the back surface area of the silicone resin layer are as described above. In addition, the protective film used above can exemplify the form described in the first example. As described in the first example, in order to prevent the generation of static electricity when the protective film is peeled off, it is preferable to use a static electricity removing device such as an ionizer to remove electricity. In addition, as in the first example, it is preferable to perform a heat treatment on the build-up substrate, and thereafter, perform a cleaning treatment on the surface of the polyimide resin layer on the side opposite to the support base material.

以下,針對構成積層基板10之支持基材12、聚醯亞胺樹脂層14及矽樹脂層13詳細敘述。Hereinafter, the supporting base 12, the polyimide resin layer 14, and the silicone resin layer 13 constituting the multilayer substrate 10 will be described in detail.

<支持基材> 玻璃製之支持基材12為支持並補強聚醯亞胺樹脂層14之構件,且作為搬送基板發揮功能。支持基材12以例如玻璃板構成。 作為玻璃之種類,較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高二氧化矽玻璃、以其他之氧化矽為主成分之氧化物系玻璃。作為氧化物系玻璃,較佳為利用氧化物換算之氧化矽含量為40~90質量%之玻璃。 作為玻璃,更具體而言,可例舉包含無鹼硼矽酸玻璃之玻璃板(AGC股份有限公司製,商品名「AN100」)。 作為玻璃板之製造方法,可例舉通常將玻璃原料熔融,並將熔融玻璃成形為板狀之方法。此種成形方法可為一般者,可例舉例如浮式法、熔融法及流孔下引法。<Support base material> The supporting substrate 12 made of glass is a member that supports and reinforces the polyimide resin layer 14 and functions as a transport substrate. The supporting substrate 12 is constituted by, for example, a glass plate. The type of glass is preferably alkali-free borosilicate glass, borosilicate glass, soda lime glass, high silica glass, and oxide-based glass mainly composed of other silica. As the oxide-based glass, a glass having a silicon oxide content of 40 to 90% by mass in terms of oxide is preferred. As the glass, a glass plate containing alkali-free borosilicate glass (manufactured by AGC Co., Ltd., trade name "AN100") can be mentioned more specifically. As a manufacturing method of a glass plate, the method of generally melting glass raw materials and shaping the molten glass into a plate shape can be mentioned. Such a forming method may be general, and examples thereof include a float method, a melting method, and a flow hole down-drawing method.

支持基材12之厚度可厚於或薄於聚醯亞胺樹脂層14。基於積層基板10之處理性之點,較佳使支持基材12之厚度厚於聚醯亞胺樹脂層14。 由於支持基材12係要求作為補強板及搬送基板之功能者,故較佳為非可撓性。因此,支持基材12之厚度較佳為0.3 mm以上,更佳為0.5 mm以上。另一方面,支持基材12之厚度較佳為1.0 mm以下。The thickness of the supporting substrate 12 may be thicker or thinner than the polyimide resin layer 14. Based on the rationality of the laminated substrate 10, it is preferable to make the thickness of the support base 12 thicker than the polyimide resin layer 14. Since the supporting base 12 is required to function as a reinforcing plate and a substrate for conveying, it is preferably inflexible. Therefore, the thickness of the supporting substrate 12 is preferably 0.3 mm or more, more preferably 0.5 mm or more. On the other hand, the thickness of the support base 12 is preferably 1.0 mm or less.

<聚醯亞胺樹脂層> 聚醯亞胺樹脂層14包含聚醯亞胺樹脂,且使用例如聚醯亞胺薄膜。作為聚醯亞胺薄膜之市售品之具體例,可例舉東洋紡股份有限公司製之「XENOMAX」,宇部興產股份有限公司製之「UPILEX 25S」。 為了形成構成電子裝置之高精細配線等,較佳為聚醯亞胺樹脂層14之表面14a平滑。具體而言,聚醯亞胺樹脂層14之表面14a之表面粗糙度Ra較佳為50 nm以下,更佳為30 nm以下,進而更佳為10 nm以下。作為表面粗糙度Ra之下限,可例舉0.01 nm以上。 基於製造步驟之操作性之點,聚醯亞胺樹脂層14之厚度較佳為1 μm以上,更佳為5 μm以上,進而更佳為10 μm以上。基於柔軟性之點,聚醯亞胺樹脂層14之厚度較佳為1 mm以下,更佳為0.2 mm以下。 由於聚醯亞胺樹脂層14之熱膨脹係數與支持基材12之熱膨脹係數之差較小者可抑制加熱後或冷卻後之撓曲,因而較佳。具體而言,聚醯亞胺樹脂層14與支持基材12之熱膨脹係數之差較佳為0~90×10-6 /°C,更佳為0~30×10-6 /°C。<Polyimide resin layer> The polyimide resin layer 14 contains a polyimide resin, and a polyimide film is used, for example. Specific examples of commercially available polyimide films include "XENOMAX" manufactured by Toyobo Co., Ltd. and "UPILEX 25S" manufactured by Ube Kosan Co., Ltd. In order to form high-definition wiring and the like constituting an electronic device, it is preferable that the surface 14a of the polyimide resin layer 14 be smooth. Specifically, the surface roughness Ra of the surface 14a of the polyimide resin layer 14 is preferably 50 nm or less, more preferably 30 nm or less, and even more preferably 10 nm or less. As the lower limit of the surface roughness Ra, 0.01 nm or more can be mentioned. Based on the operability of the manufacturing process, the thickness of the polyimide resin layer 14 is preferably 1 μm or more, more preferably 5 μm or more, and even more preferably 10 μm or more. Based on flexibility, the thickness of the polyimide resin layer 14 is preferably 1 mm or less, more preferably 0.2 mm or less. Since the difference between the coefficient of thermal expansion of the polyimide resin layer 14 and the coefficient of thermal expansion of the support base 12 is smaller, the deflection after heating or cooling can be suppressed, which is preferable. Specifically, the difference in thermal expansion coefficient between the polyimide resin layer 14 and the support base 12 is preferably 0 to 90×10 -6 /°C, more preferably 0 to 30×10 -6 /°C.

聚醯亞胺樹脂層14之面積(表面14a之面積)未特別限制,但較佳小於支持基材12之面積。另一方面,基於電子裝置之生產性之點,聚醯亞胺樹脂層14之面積較佳為300 cm2 以上。 聚醯亞胺樹脂層14之形狀未特別限制,可為矩形狀亦可為圓形狀。又可於聚醯亞胺樹脂層14,形成定向平面(形成於基板外周之平坦部分)及凹口(形成於基板之外周緣之至少1個V型缺口)。The area of the polyimide resin layer 14 (the area of the surface 14a) is not particularly limited, but is preferably smaller than the area of the supporting base 12. On the other hand, based on the productivity of the electronic device, the area of the polyimide resin layer 14 is preferably 300 cm 2 or more. The shape of the polyimide resin layer 14 is not particularly limited, and may be rectangular or circular. In addition, the polyimide resin layer 14 can be formed with an orientation plane (a flat part formed on the outer periphery of the substrate) and a notch (at least one V-shaped notch formed on the outer periphery of the substrate).

<矽酮樹脂層> 矽酮樹脂層13為主要包含矽酮樹脂者。矽酮樹脂之構造未特別限制。矽酮樹脂通常將可藉由硬化處理成為矽酮樹脂之硬化性矽酮硬化(交聯硬化)而獲得。 作為硬化性矽酮之具體例,根據其之硬化機製,可例舉縮合反應型矽酮、附加反應型矽酮、紫外線硬化型矽酮及電子束硬化型矽酮。硬化性矽酮之重量平均分子量較佳為5,000~60,000,更佳為5,000~30,000。<Silicone resin layer> The silicone resin layer 13 mainly contains silicone resin. The structure of the silicone resin is not particularly limited. The silicone resin is usually obtained by curing (crosslinking and curing) a curable silicone that is cured into a silicone resin. As specific examples of curable silicone, according to its curing mechanism, condensation reaction type silicone, additive reaction type silicone, ultraviolet curing type silicone, and electron beam curing type silicone can be exemplified. The weight average molecular weight of the curable silicone is preferably 5,000 to 60,000, more preferably 5,000 to 30,000.

作為矽酮樹脂層13之製造方法,如上所述,較佳為如下方法:於聚醯亞胺樹脂層14之背面(與表面14a相反側之面)塗佈包含成為上述矽酮樹脂之硬化性矽酮之硬化性組合物,視需要去除溶媒,形成塗膜,使塗膜中之硬化性矽酮硬化,而設為矽酮樹脂層13。 硬化性組合物除了硬化性矽酮外,亦可包含溶媒、鉑催化劑(使用附加反應型矽酮作為硬化性矽酮之情形)、調平劑及金屬化合物等。作為金屬化合物所含之金屬元素之具體例,可例舉3d過渡金屬、4d過渡金屬、鑭系金屬、鉍、鋁及錫。適當調整金屬化合物之含量。As the method of manufacturing the silicone resin layer 13, as described above, the following method is preferred: the back surface of the polyimide resin layer 14 (the surface opposite to the surface 14a) is coated with curability that becomes the aforementioned silicone resin. For the curable composition of silicone, if necessary, the solvent is removed to form a coating film, and the curable silicone in the coating film is cured, and the silicone resin layer 13 is formed. In addition to the curable silicone, the curable composition may also contain a solvent, a platinum catalyst (in the case of using an additional reactive silicone as the curable silicone), a leveling agent, a metal compound, and the like. Specific examples of metal elements contained in the metal compound include 3d transition metals, 4d transition metals, lanthanide metals, bismuth, aluminum, and tin. Adjust the content of metal compounds appropriately.

矽酮樹脂層13之厚度較佳為100 μm以下,更佳為50 μm以下,進而更佳為30 μm以下。另一方面,矽酮樹脂層13之厚度較佳為超1 μm,更佳為4 μm以上。上述厚度係以接觸式膜厚測定裝置測定5點以上之任意位置之矽酮樹脂層13之厚度,並將該等進行算數平均所得者。The thickness of the silicone resin layer 13 is preferably 100 μm or less, more preferably 50 μm or less, and still more preferably 30 μm or less. On the other hand, the thickness of the silicone resin layer 13 is preferably more than 1 μm, more preferably 4 μm or more. The above-mentioned thickness is obtained by measuring the thickness of the silicone resin layer 13 at any position above 5 points with a contact-type film thickness measuring device, and performing arithmetic average of these.

<積層基板之用途> 作為積層基板10之用途,可例舉後述之顯示裝置、接收感測器面板、太陽能電池、薄膜2次電池及積體電路等。亦有將積層基板10於大氣氛圍下,以例如450°C以上之高溫條件,暴露20分鐘以上之情形。 作為顯示裝置之具體例,可例舉LCD、OLED、電子紙、電漿顯示面板、場發射面板、量子點LED面板、微LED顯示器面板及MEMS(Micro Electro Mechanical Systems:微電子機械系統)快門面板。 作為接收感測器面板之具體例,可例舉電磁波接收感測器面板、X射線受光感測器面板、紫外線受光感測器面板、可見光線受光感測器面板及紅外線受光感測器面板。用於接收感測器面板之情形時,亦可藉由樹脂等之補強片等補強聚醯亞胺樹脂層。<Use of multilayer substrates> As the application of the multilayer substrate 10, a display device, a receiving sensor panel, a solar cell, a thin-film secondary cell, an integrated circuit, etc., which will be described later, can be exemplified. There is also a case where the laminated substrate 10 is exposed to a high temperature condition of 450° C. or more for more than 20 minutes in an atmospheric atmosphere. Specific examples of display devices include LCD, OLED, electronic paper, plasma display panels, field emission panels, quantum dot LED panels, micro LED display panels, and MEMS (Micro Electro Mechanical Systems) shutter panels . Specific examples of the receiving sensor panel include an electromagnetic wave receiving sensor panel, an X-ray receiving sensor panel, an ultraviolet receiving sensor panel, a visible light receiving sensor panel, and an infrared receiving sensor panel. When used in the case of receiving a sensor panel, the polyimide resin layer can also be reinforced with a reinforcing sheet such as resin.

如上所述,使用本發明之積層基板,製造包含聚醯亞胺樹脂層與電子裝置用構件之電子裝置。 作為電子裝置之製造方法,可例舉如下方法:例如於積層基板中之聚醯亞胺樹脂層上形成電子裝置用構件,將支持基材自獲得之附電子裝置用構件之積層基板剝離,而獲得具有聚醯亞胺樹脂層與電子裝置用構件的電子裝置。 另,上述電子裝置用構件為構成電子裝置之至少一部分之構件。As described above, using the multilayer substrate of the present invention, an electronic device including a polyimide resin layer and an electronic device member is manufactured. As a manufacturing method of an electronic device, the following method can be exemplified: for example, a member for an electronic device is formed on a polyimide resin layer in a build-up substrate, and the supporting base material is peeled from the obtained build-up substrate with a member for an electronic device, and An electronic device having a polyimide resin layer and a member for an electronic device was obtained. In addition, the above-mentioned electronic device member is a member that constitutes at least a part of the electronic device.

於以下,舉使用第2例之積層基板10之情形為例,更詳細地說明本發明,但使用第1例之積層基板10之情形亦同樣。In the following, a case where the multilayer substrate 10 of the second example is used is taken as an example to describe the present invention in more detail, but the same applies to the case of using the multilayer substrate 10 of the first example.

電子裝置之製造方法較佳為如下方法:於積層基板10之聚醯亞胺樹脂層14上形成電子裝置用構件20,獲得附電子裝置用構件之積層基板22後,將矽酮樹脂層13與聚醯亞胺樹脂層14之界面作為剝離面,由所得之附電子裝置用構件之積層基板22,分離成電子裝置(附構件之基板24)與附矽酮樹脂層之支持基材26。 將形成電子裝置用構件20之步驟稱為「構件形成步驟」,將分離成附構件之基板24與附矽酮樹脂層之支持基材26之步驟稱為「分離步驟」。 於以下,針對各步驟中使用之材料及順序詳細敘述。The manufacturing method of the electronic device is preferably the following method: forming the electronic device member 20 on the polyimide resin layer 14 of the build-up substrate 10, and after obtaining the build-up substrate 22 with the electronic device member, the silicone resin layer 13 and The interface of the polyimide resin layer 14 is used as a peeling surface, and the obtained laminated substrate 22 with a component for electronic devices is separated into an electronic device (substrate 24 with a component) and a support base 26 with a silicone resin layer. The step of forming the member 20 for an electronic device is called a "member forming step", and the step of separating the substrate 24 with a member and the support base 26 with a silicone resin layer is called a "separating step". In the following, the materials and procedures used in each step are described in detail.

構件形成步驟為於積層基板10之聚醯亞胺樹脂層14上形成電子裝置用構件之步驟。更具體而言,如圖5所示,於聚醯亞胺樹脂層14之表面14a上形成電子裝置用構件20,獲得附電子裝置用構件之積層基板22。 首先,針對本步驟中使用之電子裝置用構件20詳細敘述,且針對後續步驟之順序詳細敘述。The component forming step is a step of forming components for electronic devices on the polyimide resin layer 14 of the multilayer substrate 10. More specifically, as shown in FIG. 5, a member 20 for an electronic device is formed on the surface 14a of the polyimide resin layer 14 to obtain a laminated substrate 22 with a member for an electronic device. First, the electronic device component 20 used in this step will be described in detail, and the sequence of subsequent steps will be described in detail.

電子裝置用構件20為形成於積層基板10中之聚醯亞胺樹脂層14上,且構成電子裝置之至少一部分之構件。更具體而言,作為電子裝置用構件20,可例舉用於顯示裝置、接收感測器面板、太陽能電池、薄膜2次電池及積體電路等之構件(例如,LTPS等顯示裝置用構件、接收感測器面板用構件、太陽能電池用構件、薄膜2次電池用構件及積體電路用電路),可例舉例如美國專利申請公開第2018/0178492號說明書之段落[0192]所記載之太陽能電池用構件、同段落[0193]所記載之薄膜2次電池用構件、同段落[0194]所記載之電子零件用電路。The electronic device member 20 is a member that is formed on the polyimide resin layer 14 in the multilayer substrate 10 and constitutes at least a part of the electronic device. More specifically, as the electronic device member 20, a member used for a display device, a receiving sensor panel, a solar cell, a thin-film secondary battery, an integrated circuit, etc. (for example, a display device such as LTPS, etc. Receiving sensor panel member, solar cell member, thin film secondary battery member, and integrated circuit circuit), for example, the solar energy described in paragraph [0192] of the specification of U.S. Patent Application Publication No. 2018/0178492 The battery member, the thin-film secondary battery member described in the same paragraph [0193], and the electronic component circuit described in the same paragraph [0194].

上述之附電子裝置用構件之積層基板22之製造方法未特別限制,根據電子裝置用構件之構成構件之種類,以先前眾所周知之方法,於積層基板10之聚醯亞胺樹脂層14之表面14a上形成電子裝置用構件20。 電子裝置用構件20可為所有構件之一部分(以下,稱為「部分構件」),而非最終形成於聚醯亞胺樹脂層14之表面14a之所有構件(以下,稱為「所有構件」)。亦可於後續步驟中將自矽酮樹脂層13剝離之附部分構件之基板設為附所有構件之基板(相當於電子裝置)。 可於自矽樹脂層13剝離之附所有構件之基板,於其之剝離面形成其他電子裝置用構件。再者,亦可使2片附電子裝置用構件之積層基板之電子裝置用構件彼此對向,並將兩者貼合,而組裝附所有構件之積層體,其後,將2片附矽酮樹脂層之支持基材自附所有構件之積層體剝離,而製造電子裝置。The manufacturing method of the above-mentioned multilayer substrate 22 with a member for electronic device is not particularly limited. According to the type of the constituent member of the member for electronic device, a previously known method is applied to the surface 14a of the polyimide resin layer 14 of the multilayer substrate 10 A member 20 for an electronic device is formed thereon. The electronic device member 20 may be a part of all the members (hereinafter, referred to as "partial member"), instead of all the members that are finally formed on the surface 14a of the polyimide resin layer 14 (hereinafter, referred to as "all members") . It is also possible to set the substrate with partial components peeled from the silicone resin layer 13 as a substrate with all components (equivalent to an electronic device) in a subsequent step. Other electronic device components can be formed on the substrate with all components peeled from the silicone resin layer 13 on the peeled surface. Furthermore, it is also possible to align the two electronic device components of the laminated substrate with the electronic device components to each other, attach the two to assemble the laminated body with all the components, and then attach the two pieces of silicone The supporting substrate of the resin layer is peeled off from the laminate with all the components to manufacture the electronic device.

例如,若舉製造OLED之情形為例,則為了於積層基板10之聚醯亞胺樹脂層14之與矽酮樹脂層13側相反側之表面(表面14a)上形成有機EL構造體,而進行形成透明電極,進而於形成有透明電極之面上蒸鍍孔注入層、孔輸送層、發光層、電子輸送層等,形成背面電極,使用密封板密封等各種層形成或處理。作為該等層形成或處理之具體例,可例舉成膜處理、蒸鍍處理、密封板之接著處理等。For example, taking the case of manufacturing OLED as an example, it is performed to form an organic EL structure on the surface (surface 14a) of the polyimide resin layer 14 of the build-up substrate 10 on the side opposite to the silicone resin layer 13 side. A transparent electrode is formed, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, etc. are vapor-deposited on the surface on which the transparent electrode is formed, a back electrode is formed, and various layers such as sealing with a sealing plate are formed or processed. As specific examples of the formation or treatment of these layers, film formation treatment, vapor deposition treatment, bonding treatment of a sealing plate, etc. may be mentioned.

分離步驟如圖6所示為如下步驟:將矽樹脂層13與聚醯亞胺樹脂層14之界面作為剝離面,由上述構件形成步驟所得之附電子裝置用構件之積層基板22,分離成積層有電子裝置用構件20之聚醯亞胺樹脂層14(附構件之基板24)、與附矽酮樹脂層之支持基材26,而獲得附包含電子裝置用構件20及聚醯亞胺樹脂層14之構件的基板24(電子裝置)。The separation step is shown in FIG. 6 as the following steps: the interface between the silicone resin layer 13 and the polyimide resin layer 14 is used as the peeling surface, and the laminated substrate 22 with the electronic device obtained from the above-mentioned member forming step is separated into a laminated layer There are the polyimide resin layer 14 of the electronic device member 20 (the substrate 24 with the member), and the support base 26 with the silicone resin layer, to obtain the electronic device member 20 and the polyimide resin layer 14 of the substrate 24 (electronic device).

經剝離之聚醯亞胺樹脂層14上之電子裝置用構件20為形成必要之所有構成構件之一部分之情形時,亦可於分離後,將剩餘之構成構件形成於聚醯亞胺樹脂層14上。When the electronic device member 20 on the peeled polyimide resin layer 14 forms a part of all necessary constituent members, the remaining constituent members may be formed on the polyimide resin layer 14 after separation on.

剝離聚醯亞胺樹脂層14與矽酮樹脂層13之方法未特別限制。例如,可將銳利之刃狀物插入至聚醯亞胺樹脂層14與矽酮樹脂層13之界面,賦予剝離契機後,吹送水與壓縮空氣之混合流體而剝離。 較佳為以支持基材12成為上側,電子裝置用構件20側成為下側之方式,將附電子裝置用構件之積層基板22配置於平板上,將電子裝置用構件20側真空吸著於平板上,並於該狀態下,首先使刃狀物侵入至聚醯亞胺樹脂層14與矽樹脂層13之界面。其後,以複數個真空吸附墊吸附支持基材12側,使真空吸附墊依序自插入刃狀物之部位附近上升。如此,可容易地剝離附矽酮樹脂層之支持基材26。The method of peeling off the polyimide resin layer 14 and the silicone resin layer 13 is not particularly limited. For example, a sharp blade can be inserted into the interface between the polyimide resin layer 14 and the silicone resin layer 13, and after a peeling opportunity is given, a mixed fluid of water and compressed air can be blown to peel off. It is preferable to arrange the laminated substrate 22 with the electronic device member on the flat plate so that the supporting base 12 becomes the upper side and the electronic device member 20 side becomes the lower side, and the electronic device member 20 side is vacuum sucked on the flat plate In this state, the blade is first intruded into the interface between the polyimide resin layer 14 and the silicone resin layer 13. After that, a plurality of vacuum suction pads are used to suck the support substrate 12 side, and the vacuum suction pads are sequentially raised from the vicinity of the position where the blade is inserted. In this way, the support base 26 with the silicone resin layer can be easily peeled off.

將附構件之基材24自附電子裝置用構件之積層基板22分離時,藉由控制離子化器之吹送或濕度,可進一步抑制矽酮樹脂層13之碎片靜電吸附於附構件之基板24。 上述之電子裝置(附構件之基板24)之製造方法較適於例如美國專利申請公開第2018/0178492號說明書之段落[0210]所記載之顯示裝置之製造,作為附構件之基板24,可例舉例如同段落之[0211]所記載者。 [實施例]When the substrate 24 with a component is separated from the laminated substrate 22 with a component for an electronic device, by controlling the blowing or humidity of the ionizer, it is possible to further prevent the fragments of the silicone resin layer 13 from being electrostatically attracted to the substrate 24 with the component. The above-mentioned manufacturing method of the electronic device (substrate 24 with component) is more suitable for the manufacture of the display device described in paragraph [0210] of the specification of US Patent Application Publication No. 2018/0178492, for example, as the substrate 24 with component Examples are as described in the paragraph [0211]. [Example]

於以下,藉由實施例等具體說明本發明,但本發明並非受該等例所限制。後述之例1~7、9~15為實施例,例8為比較例。In the following, the present invention will be specifically described with examples, but the present invention is not limited by these examples. Examples 1 to 7 and 9 to 15 described later are examples, and Example 8 is a comparative example.

<裝置之耐久性評估> 將由各例之積層基板所得之有機EL顯示裝置保存於60°C、90%RH之環境下,比較黑點產生之保存時間。將未達500小時而黑點擴大者評估為×,將500小時以上且未達1000小時而黑點擴大者評估為○,將1000小時以上而黑點擴大者評估為◎。<Evaluation of the durability of the device> The organic EL display device obtained from the laminated substrate of each example was stored in an environment of 60°C and 90% RH, and the storage time of black spots was compared. Those with enlarged black spots for less than 500 hours were evaluated as ×, those with enlarged black spots for 500 hours or more and less than 1000 hours were evaluated as ○, and those with enlarged black spots for more than 1000 hours were evaluated as ⊚.

<例1> (硬化性矽酮之調製) 於1L之燒瓶中,加入三乙氧基甲基矽烷(179 g)、甲苯(300 g)、乙酸(5 g),將混合物以25°C攪拌20分鐘後,進而加熱至60°C,使之反應12小時。將所得之反應粗液冷卻至25°C後,用水(300 g),將反應粗液清洗3次。於清洗後之反應粗液中加入氯化三甲基矽烷(70 g),將混合液以25°C攪拌20分鐘後,進而加熱至50°C,使之反應12小時。將所得之反應粗液冷卻至25°C後,用水(300 g),將反應粗液清洗3次。自清洗後之反應粗液減壓餾去甲苯,設為漿體狀態後,以真空乾燥機乾燥一晚上,藉此獲得白色之有機聚矽氧烷化合物即硬化性矽酮1。硬化性矽酮1之T單位之個數:M單位之個數=87:13(莫耳比)。另,M單位意指以(R)3 SiO1/2 表示之1官能有機矽烷氧基單位。T單位意指以RSiO3/2 (R表示氫原子或有機基)表示之3官能有機矽烷氧基單位。<Example 1> (Preparation of curable silicone) In a 1L flask, add triethoxymethylsilane (179 g), toluene (300 g), and acetic acid (5 g), and stir the mixture at 25°C After 20 minutes, it was further heated to 60°C and reacted for 12 hours. After the obtained crude reaction liquid was cooled to 25°C, the crude reaction liquid was washed 3 times with water (300 g). Trimethylsilyl chloride (70 g) was added to the washed crude reaction solution, and the mixture was stirred at 25°C for 20 minutes, and then heated to 50°C to react for 12 hours. After the obtained crude reaction liquid was cooled to 25°C, the crude reaction liquid was washed 3 times with water (300 g). The toluene was removed under reduced pressure from the reaction crude liquid after washing, and the slurry was put into a slurry state, and then dried in a vacuum dryer overnight to obtain a white organopolysiloxane compound, namely, curable silicone 1. The number of T units of the sclerosing silicone 1: the number of M units=87:13 (molar ratio). In addition, the M unit means a monofunctional organosilicon alkoxy unit represented by (R) 3 SiO 1/2. The T unit means a trifunctional organosilicon alkoxy unit represented by RSiO 3/2 (R represents a hydrogen atom or an organic group).

(硬化性組合物之調製) 將硬化性矽1與己烷混合,進而添加有機鋯系化合物(辛酸鋯化合物)及有機鉍系化合物(2-乙基己酸鉍)。溶媒量以固體成分濃度為50質量%之方式調整。又,金屬化合物之添加量以金屬元素相對於樹脂100質量部為0.01質量部之方式調整。藉由使用孔徑0.45 μm之過濾器過濾所得之混合液,而獲得硬化性組合物。(Preparation of curable composition) The curable silicon 1 is mixed with hexane, and an organic zirconium compound (zirconium octoate compound) and an organic bismuth compound (bismuth 2-ethylhexanoate) are further added. The amount of solvent is adjusted so that the solid content concentration is 50% by mass. In addition, the addition amount of the metal compound was adjusted so that the metal element was 0.01 parts by mass relative to 100 parts by mass of the resin. The curable composition was obtained by filtering the resulting mixed liquid with a filter with a pore size of 0.45 μm.

(積層體之製作) 將兩面配置有保護膜之厚度為0.015 mm之聚醯亞胺薄膜(東洋紡股份有限公司製,商品名「XENOMAX」)之一保護膜剝離,於保護膜被剝離側之聚醯亞胺薄膜之表面上,塗佈經調製之硬化性組合物,使用加熱板以140°C加熱10分鐘,藉此形成矽酮樹脂層。矽酮樹脂層之厚度為10 μm。 接著,將以水系玻璃清洗劑(Parkercorp股份有限公司製,「PK-LCG213」)清洗後,以純水清洗之200×200 mm,厚度為0.5 mm之玻璃板「AN100」(支持基材)、與形成有矽酮樹脂層之聚醯亞胺薄膜以捲對捲方式貼合,而製作依序配置有玻璃板、矽酮樹脂層、聚醯亞胺薄膜及保護膜之積層體。(Production of multilayer body) Peel off one of the polyimide films (manufactured by Toyobo Co., Ltd., trade name "XENOMAX") with a thickness of 0.015 mm with protective films on both sides, and place it on the surface of the polyimide film on the side where the protective film is peeled off On top, apply the prepared curable composition and heat it at 140°C for 10 minutes using a hot plate to form a silicone resin layer. The thickness of the silicone resin layer is 10 μm. Next, the glass plate "AN100" (supporting base material), a 200×200 mm thick 0.5 mm glass plate, is washed with a water-based glass cleaner (manufactured by Parkercorp Co., Ltd., "PK-LCG213"), and then washed with pure water. The polyimide film formed with the silicone resin layer is laminated in a roll-to-roll manner to produce a laminated body in which a glass plate, a silicone resin layer, a polyimide film, and a protective film are sequentially arranged.

(加熱處理及清洗處理) 將上述積層體搬送至加熱裝置,且在靜置於加熱裝置內之前,將保護膜剝離,於加熱裝置內靜置,並以450°C加熱0.5小時。加熱處理後,將積層基板自加熱裝置取出,對聚醯亞胺樹脂層表面實施電暈處理,其後,實施使用輥刷之清洗處理,獲得積層基板1。清洗處理時,為了不使積層基板於清洗機內移動,以固定機構(夾輥)固定積層基板。此時,固定機構與聚醯亞胺樹脂層表面接觸。 另,剝離保護膜時,為了防止產生之靜電,而使用離子化器減少聚醯亞胺樹脂層表面帶電。以下,將使用離子化器之對策稱為「對策A」。 又,加熱處理時,以聚醯亞胺樹脂層於加熱裝置內朝下之方式配置積層基板。以下,將以聚醯亞胺樹脂層朝下之方式配置積層基板之對策稱為「對策B」。 又,將實施上述電暈處理及清洗處理之對策稱為「對策C」。 作為加熱裝置,使用紅外線加熱裝置。以下,將使用紅外線加熱裝置之對策稱為「對策D」。(Heat treatment and cleaning treatment) The laminate was transported to a heating device, and before being placed in the heating device, the protective film was peeled off, standing in the heating device, and heating at 450° C. for 0.5 hours. After the heat treatment, the laminated substrate was taken out from the heating device, corona treatment was applied to the surface of the polyimide resin layer, and then cleaning treatment with a roller brush was applied to obtain the laminated substrate 1. During the cleaning process, in order to prevent the build-up substrate from moving in the cleaning machine, the build-up substrate is fixed by a fixing mechanism (nip roller). At this time, the fixing mechanism is in contact with the surface of the polyimide resin layer. In addition, when peeling off the protective film, in order to prevent the generation of static electricity, an ionizer is used to reduce the surface charge of the polyimide resin layer. Hereinafter, the countermeasure using an ionizer is referred to as "countermeasure A". In addition, during the heat treatment, the laminated substrate is arranged such that the polyimide resin layer faces downward in the heating device. Hereinafter, the countermeasure for arranging the multilayer substrate with the polyimide resin layer facing downward is referred to as "countermeasure B". In addition, the countermeasure for implementing the corona treatment and cleaning treatment described above is referred to as "countermeasure C". As the heating device, an infrared heating device is used. Hereinafter, the countermeasure using an infrared heating device is referred to as "countermeasure D".

<例2~15> 如表1及2所示,除了變更(加熱處理及清洗處理)時實施對策A~F之哪一者以外,皆根據與例1同樣之程序,獲得積層基板。 另,對策E意指於清洗機內固定積層基板時,使用不與聚醯亞胺樹脂層表面接觸之固定機構之對策。 又,對策F意指清洗處理時,使用盤刷之對策。<Example 2~15> As shown in Tables 1 and 2, except for changing (heating treatment and cleaning treatment) which of measures A to F was implemented, the same procedure as in Example 1 was followed to obtain a multilayer substrate. In addition, the countermeasure E means a countermeasure to use a fixing mechanism that does not contact the surface of the polyimide resin layer when fixing the laminated substrate in the cleaning machine. In addition, the countermeasure F refers to the countermeasure of using a disk brush during the cleaning process.

表1及2中,將實施各對策之情形設為「有」,將不實施各對策之情形設為「無」。 例如,對策C為「無」之例2中,加熱處理後,不實施電暈處理及清洗處理。 又,對策B為「無」之例3中,於加熱裝置內配置積層基板時,以聚醯亞胺樹脂層朝上之方式配置積層基板。 又,對策A為「無」之例4中,不使用離子化器,而進行保護膜之剝離。 又,對策D為「無」之例10中,使用熱風加熱裝置作為加熱裝置。 又,對策E為「無」之例11中,使用與聚醯亞胺樹脂層表面接觸之固定機構。 又,對策F為「無」之例12中,實施使用輥刷之清洗處理。In Tables 1 and 2, the case where each countermeasure is implemented is set to "Yes", and the case where each countermeasure is not implemented is set to "None". For example, in Example 2 where the countermeasure C is "None", after the heat treatment, the corona treatment and the cleaning treatment are not performed. In addition, in Example 3 where the countermeasure B is "None", when arranging the multilayer substrate in the heating device, the multilayer substrate is arranged so that the polyimide resin layer faces upward. In addition, in Example 4 where the countermeasure A is "None", the protective film is peeled without using an ionizer. In addition, in Example 10 where the countermeasure D is "None", a hot air heating device is used as the heating device. In addition, in Example 11 where the countermeasure E is "None", a fixing mechanism in contact with the surface of the polyimide resin layer is used. In addition, in Example 12 where the countermeasure F is "None", the cleaning process using a roller brush is implemented.

表1及2中,「第1凸部之數量」、「第2凸部之數量」、「第3凸部之數量」分別表示上述之聚醯亞胺樹脂層表面之第1凸部、第2凸部及第3凸部之數量(個/cm2 )。 「凸部之數量」表示聚醯亞胺樹脂層表面之凸部之數量(合計數)(個/cm2 )。 「凹部之數量」表示聚醯亞胺樹脂層表面之凹部之數量(合計數)(個/cm2 )。 凸部及凹部之測定方法如上所述。In Tables 1 and 2, "the number of first protrusions", "the number of second protrusions", and "the number of third protrusions" respectively represent the first and second protrusions on the surface of the polyimide resin layer mentioned above. The number of 2 convex parts and the third convex part (pcs/cm 2 ). "Number of convex parts" means the number (total number) of convex parts on the surface of the polyimide resin layer (pieces/cm 2 ). "Number of recesses" means the number (total number) of recesses on the surface of the polyimide resin layer (pieces/cm 2 ). The method of measuring the convex portion and the concave portion is as described above.

<有機EL顯示裝置(相當於電子裝置)之製造> 使用例1~15所得之積層基板,根據以下之程序,製造有機EL顯示裝置。 首先,於積層基板之聚醯亞胺樹脂層之與玻璃板側相反側之表面上,藉由電漿CVD(Chemical Vapor Deposition:化學氣相沈積)法依序成膜氮化矽、氧化矽、非晶矽。接著,藉由離子摻雜裝置,將低濃度之硼注入至非晶矽層,進行加熱處理,並進行脫氫處理。接著,藉由雷射退火裝置,進行非晶矽層之結晶化處理。接著,藉由使用光微影法之蝕刻及離子摻雜裝置,將低濃度之磷注入至非晶矽層,形成N型及P型TFT(Thin Film Transistor:薄膜電晶體)區域。 接著,於聚醯亞胺樹脂層之與玻璃板側相反側,藉由電漿CVD法成膜氧化矽膜,形成閘極絕緣膜後,藉由濺鍍法成膜鉬膜,藉由使用光微影法之蝕刻形成閘極電極。接著,藉由光微影法與離子摻雜裝置,將高濃度磷與硼注入於N型、P型之各個期望之區域,形成源極區域及汲極區域。 接著,於聚醯亞胺樹脂層之與玻璃板側相反側,以電漿CVD法成膜氧化矽形成層間絕緣膜,藉由濺鍍法成膜鋁膜及藉由使用光微影法之蝕刻形成TFT電極。接著,於氫氛圍下,進行加熱處理,並進行氫化處理後,以電漿CVD法成膜氮矽膜膜,而形成鈍化層。 接著,於聚醯亞胺樹脂層之與玻璃板側相反側,塗佈紫外線硬化性樹脂,藉由光微影法形成平坦化層與接觸孔。接著,藉由濺鍍法成膜氧化銦錫膜,藉由使用光微影法之蝕刻形成像素電極。接著,藉由蒸鍍法,於聚醯亞胺樹脂層之與玻璃板側相反側,依序成膜作為電洞注入層之4,4',4''-三(3-甲基苯基苯基胺基)三苯胺、作為電洞輸送層之雙[(N-萘基)-N-苯基]-聯苯胺、作為發光層之於8-羥基喹啉鋁錯合物(Alq3)中,混合40體積%之2,6-雙[4-[N-(4-甲氧苯基)-N-苯基]胺基苯乙烯]萘-1,5-二甲腈(BSN-BCN)者、作為電子輸送層之Alq3。接著,藉由濺鍍法成膜鋁膜,藉由使用光微影法之蝕刻形成對向電極。 接著,於聚醯亞胺樹脂層之與玻璃板側相反側,經由紫外線硬化型之接著層,貼合另一塊玻璃板並密封。藉由上述程序,於聚醯亞胺樹脂層上形成有機EL構造體。於聚醯亞胺樹脂層上具有有機EL構造體之構造物(以下,稱為面板A。)為本發明之附電子裝置用構件之積層基板。 接著,使面板A之密封體側真空吸附於平板後,將厚度為0.1 mm之不鏽鋼製刃具插入至面板A角落部之聚醯亞胺樹脂層與矽酮樹脂層之界面,對聚醯亞胺樹脂層與矽樹脂層之界面賦予剝離契機。且,以真空吸附墊吸附面板A之支持基材表面後,使吸著附上升。此處,一面自離子化器(Keyence公司製)將除電性流體吹送至該界面一面進行刀具之插入。接著,自離子化器向形成之空隙繼續吹送除電性流體,且,與之同時,一面將水注入至剝離前線,一面上提真空吸附墊。其結果,僅形成有有機EL構造體之聚醯亞胺樹脂層保留於平板上,而可剝離附矽酮樹脂層之支持基材。 接著,使用雷射切割器或劃線-裂斷法,將經分離之聚醯亞胺樹脂層切斷,分斷成複數個單元後,組裝形成有有機EL構造體之聚醯亞胺樹脂層與對向基板,實施模組形成步驟,製作有機EL顯示裝置。<Manufacturing of organic EL display device (equivalent to electronic device)> Using the multilayer substrates obtained in Examples 1-15, organic EL display devices were manufactured according to the following procedures. First, on the surface of the polyimide resin layer of the build-up substrate on the opposite side of the glass plate, silicon nitride, silicon oxide, Amorphous silicon. Then, a low-concentration boron is implanted into the amorphous silicon layer by an ion doping device, heat treatment is performed, and dehydrogenation treatment is performed. Then, the crystallization treatment of the amorphous silicon layer is performed by the laser annealing device. Then, by using an etching and ion doping device using photolithography, low-concentration phosphorus is implanted into the amorphous silicon layer to form N-type and P-type TFT (Thin Film Transistor) regions. Next, on the side opposite to the glass plate side of the polyimide resin layer, a silicon oxide film was formed by plasma CVD to form a gate insulating film, and then a molybdenum film was formed by sputtering. The etching of the lithography method forms the gate electrode. Then, by means of photolithography and ion doping devices, high concentrations of phosphorus and boron are implanted into each desired region of N-type and P-type to form a source region and a drain region. Next, on the side opposite to the glass plate side of the polyimide resin layer, a plasma CVD method is used to form a silicon oxide film to form an interlayer insulating film, an aluminum film is formed by a sputtering method, and a photolithography method is used for etching TFT electrodes are formed. Next, heat treatment is performed in a hydrogen atmosphere, and after the hydrogenation treatment is performed, a silicon nitride film is formed by a plasma CVD method to form a passivation layer. Next, on the side opposite to the glass plate side of the polyimide resin layer, an ultraviolet curable resin is applied, and a planarization layer and contact holes are formed by photolithography. Next, an indium tin oxide film is formed by a sputtering method, and a pixel electrode is formed by etching using a photolithography method. Then, by the vapor deposition method, 4,4',4''-tris(3-methylphenyl) as the hole injection layer is sequentially formed on the side of the polyimide resin layer opposite to the glass plate side. Phenylamino) triphenylamine, bis[(N-naphthyl)-N-phenyl]-benzidine as a hole transport layer, in 8-hydroxyquinoline aluminum complex (Alq3) as a light-emitting layer , Mix 40% by volume of 2,6-bis[4-[N-(4-methoxyphenyl)-N-phenyl]aminostyrene]naphthalene-1,5-dicarbonitrile (BSN-BCN) Those, Alq3 as the electron transport layer. Next, an aluminum film is formed by a sputtering method, and a counter electrode is formed by etching using a photolithography method. Next, on the side opposite to the glass plate side of the polyimide resin layer, another glass plate is bonded and sealed via an ultraviolet-curing adhesive layer. Through the above procedure, an organic EL structure is formed on the polyimide resin layer. A structure having an organic EL structure on the polyimide resin layer (hereinafter referred to as panel A.) is a laminated substrate with a member for an electronic device of the present invention. Next, after vacuuming the sealing body side of panel A on the flat plate, insert a stainless steel cutting tool with a thickness of 0.1 mm into the interface between the polyimide resin layer and the silicone resin layer at the corner of panel A, The interface between the resin layer and the silicone resin layer provides an opportunity for peeling. In addition, after the surface of the supporting substrate of the panel A is adsorbed by the vacuum adsorption pad, the adsorption is lifted. Here, while blowing the static elimination fluid from an ionizer (manufactured by Keyence Corporation) to the interface, insert the tool. Next, continue to blow the static elimination fluid from the ionizer to the formed gap, and at the same time, while injecting water into the peeling front line, the vacuum adsorption pad is lifted on the other side. As a result, only the polyimide resin layer on which the organic EL structure is formed remains on the flat plate, and the supporting substrate with the silicone resin layer can be peeled off. Then, using a laser cutter or a scribing-slicing method, the separated polyimide resin layer is cut and divided into a plurality of units, and then the polyimide resin layer forming the organic EL structure is assembled With the counter substrate, the module forming step is implemented to fabricate an organic EL display device.

[表1] 表1 例1 例2 例3 例4 例5 例6 例7 例8 凸部 對策A 對策B 對策C 第1凸部之數量 0.01 0.01 0.06 0.08 0.13 0.06 0.08 0.13 第2凸部之數量 0.05 0.20 0.10 0.05 0.10 0.25 0.20 0.25 第3凸部之數量 0.08 0.23 0.13 0.15 0.20 0.28 0.30 0.35 凸部之數量 0.14 0.44 0.29 0.28 0.43 0.59 0.58 0.73 凹部 對策D 對策E 對策F 凹部之數量(總數) 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.19 裝置耐久性 × [Table 1] Table 1 example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Convex Countermeasure A Have Have Have no no Have no no Countermeasure B Have Have no Have no no Have no Countermeasure C Have no Have Have Have no no no Number of first convex parts 0.01 0.01 0.06 0.08 0.13 0.06 0.08 0.13 Number of 2nd convex parts 0.05 0.20 0.10 0.05 0.10 0.25 0.20 0.25 Number of 3rd convex parts 0.08 0.23 0.13 0.15 0.20 0.28 0.30 0.35 Number of protrusions 0.14 0.44 0.29 0.28 0.43 0.59 0.58 0.73 Recess Countermeasure D Have Have Have Have Have Have Have no Countermeasure E no no no no no no no no Countermeasure F no no no no no no no no Number of recesses (total) 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.19 Device durability X

[表2] 表2 例9 例10 例11 例12 例13 例14 例15 凸部 對策A 對策B 對策C 第1凸部之數量 0.06 0.06 0.06 0.06 0.06 0.06 0.06 第2凸部之數量 0.25 0.25 0.25 0.25 0.25 0.25 0.25 第3凸部之數量 0.28 0.28 0.28 0.28 0.28 0.28 0.28 凸部之數量 0.59 0.59 0.59 0.59 0.59 0.59 0.59 凹部 對策D 對策E 對策F 凹部之數量(總數) 0.04 0.08 0.10 0.09 0.14 0.15 0.13 裝置耐久性 [Table 2] Table 2 Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Example 15 Convex Countermeasure A Have Have Have Have Have Have Have Countermeasure B no no no no no no no Countermeasure C no no no no no no no Number of first convex parts 0.06 0.06 0.06 0.06 0.06 0.06 0.06 Number of 2nd convex parts 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Number of 3rd convex parts 0.28 0.28 0.28 0.28 0.28 0.28 0.28 Number of protrusions 0.59 0.59 0.59 0.59 0.59 0.59 0.59 Recess Countermeasure D Have no Have Have no Have no Countermeasure E Have Have no Have no no Have Countermeasure F Have Have Have no Have no no Number of recesses (total) 0.04 0.08 0.10 0.09 0.14 0.15 0.13 Device durability

如表1及2所示,使用特定之積層基板之情形時,確認獲得期望之效果。As shown in Tables 1 and 2, when using a specific build-up substrate, it is confirmed that the desired effect is obtained.

本申請案係基於2019年6月6日申請之日本專利申請案第2019-106248號者,其內容以引用之方式併入於本文中。This application is based on the Japanese Patent Application No. 2019-106248 filed on June 6, 2019, the content of which is incorporated herein by reference.

10:積層基板 12:支持基材 12a:表面 13:矽酮樹脂層 13a:表面 14:聚醯亞胺樹脂層 14a:表面 16:凸部 18:凹部 20:電子裝置用構件 22:附電子裝置用構件之積層基板 24:附構件之基板 26:附矽酮樹脂層之支持基材 L:長度 S:長度10: Multilayer substrate 12: Support substrate 12a: surface 13: Silicone resin layer 13a: surface 14: Polyimide resin layer 14a: surface 16: Convex 18: recess 20: Components for electronic devices 22: Multilayer substrate with components for electronic devices 24: Substrate with components 26: Supporting base material with silicone resin layer L: length S: length

圖1係模式性顯示本發明之實施形態之積層基板之第1例之剖視圖。 圖2係本發明之實施形態之積層基板之第1例中之聚醯亞胺樹脂層表面之放大剖視圖。 圖3係用以說明凸部之長邊長度及短邊長度之圖。 圖4係模式性顯示本發明之實施形態之積層基板之第2例之剖視圖。 圖5係模式性顯示構件形成步驟之剖視圖。 圖6係模式性顯示分離步驟之剖視圖。FIG. 1 is a cross-sectional view schematically showing the first example of the multilayer substrate of the embodiment of the present invention. 2 is an enlarged cross-sectional view of the surface of the polyimide resin layer in the first example of the laminated substrate of the embodiment of the present invention. Fig. 3 is a diagram for explaining the length of the long side and the length of the short side of the convex portion. 4 is a cross-sectional view schematically showing the second example of the multilayer substrate of the embodiment of the present invention. Fig. 5 is a cross-sectional view schematically showing the steps of forming a member. Fig. 6 is a cross-sectional view schematically showing the separation step.

Claims (9)

一種積層基板,其具備玻璃製之支持基材、與配置於上述支持基材上之聚醯亞胺樹脂層,且 於上述聚醯亞胺樹脂層之與上述支持基材相反側之表面上, 長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,且高度為5 μm以下之凸部之數量為0.60個/cm2 以下, 長邊長度為3~1000 μm,短邊長度為20 μm,且深度為1 μm以下之凹部之數量為0.15個/cm2 以下。A laminated substrate comprising a supporting substrate made of glass, and a polyimide resin layer arranged on the supporting substrate, and on the surface of the polyimide resin layer opposite to the supporting substrate, The length of the long side is 3 μm or more and less than 50 μm, the length of the short side is less than 50 μm, and the number of protrusions with a height of 5 μm or less is 0.60/cm 2 or less, and the length of the long side is 3~1000 μm, short The side length is 20 μm, and the number of recesses with a depth of 1 μm or less is 0.15/cm 2 or less. 如請求項1之積層基板,其中上述凸部中,長邊長度為10 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下,且包含Na及Cl之至少1種元素之第1凸部之數量為0.15個/cm2 以下。Such as the multilayer substrate of claim 1, wherein in the above-mentioned protrusions, the length of the long side is 10 μm or more and less than 50 μm, the length of the short side is less than 50 μm, and the height is less than 1 μm, and contains at least one of Na and Cl The number of the first protrusions of the element is 0.15/cm 2 or less. 如請求項1或2之積層基板,其中上述凸部中,長邊長度為3 μm以上且未達20 μm,短邊長度未達20 μm,高度為5 μm以下,且包含Si及Al之至少1種元素之第2凸部之數量為0.25個/cm2 以下。For example, the multilayer substrate of claim 1 or 2, wherein in the above-mentioned protrusions, the long side length is 3 μm or more and less than 20 μm, the short side length is less than 20 μm, and the height is less than 5 μm, and contains at least Si and Al The number of second protrusions of one element is 0.25/cm 2 or less. 如請求項3之積層基板,其中上述凸部中,上述第1凸部及上述第2凸部以外之凸部,即長邊長度為3 μm以上且未達50 μm,短邊長度未達50 μm,高度為1 μm以下之第3凸部之數量為0.30個/cm2 以下。Such as the laminated substrate of claim 3, wherein among the above-mentioned convex parts, the convex parts other than the above-mentioned first convex part and the above-mentioned second convex part, that is, the length of the long side is 3 μm or more and less than 50 μm, and the length of the short side is less than 50 μm, the number of third protrusions with a height of 1 μm or less is 0.30/cm 2 or less. 如請求項1至4中任一項之積層基板,其中上述凸部之數量為0.20個/cm2 以下。The laminated substrate according to any one of claims 1 to 4, wherein the number of the above-mentioned protrusions is 0.20 pcs/cm 2 or less. 如請求項1至5中任一項之積層基板,其中上述凹部之數量為0.07個/cm2 以下。The laminated substrate according to any one of claims 1 to 5, wherein the number of the above-mentioned recesses is 0.07/cm 2 or less. 一種電子裝置之製造方法,其具備如下步驟:於請求項1至6中任一項之積層基板之上述聚醯亞胺樹脂層之與上述支持基材相反側之表面上,形成電子裝置用構件,而獲得附電子裝置用構件之積層基板的構件形成步驟;及 自上述附電子裝置用構件之積層基板,獲得具有上述聚醯亞胺樹脂層及上述電子裝置用構件之電子裝置的分離步驟。A method of manufacturing an electronic device, comprising the steps of: forming a member for an electronic device on the surface of the polyimide resin layer of the laminated substrate of any one of claims 1 to 6 on the side opposite to the supporting base material , And obtain a component forming step of a multilayer substrate with components for electronic devices; and A separation step of obtaining an electronic device having the above-mentioned polyimide resin layer and the above-mentioned electronic device member from the above-mentioned laminated substrate with the member for electronic device. 一種積層基板之製造方法,其係如請求項1至6中任一項之積層基板之製造方法,且 將薄膜狀之上述聚醯亞胺樹脂層與上述支持基材貼合,而製造上述積層基板。A method for manufacturing a multilayer substrate, which is the method for manufacturing a multilayer substrate according to any one of claims 1 to 6, and The film-like polyimide resin layer is bonded to the supporting base material to produce the laminated substrate. 如請求項8之積層基板之製造方法,其中將具備薄膜狀之上述聚醯亞胺樹脂層、與配置於上述聚醯亞胺樹脂層之一表面上之保護膜的積層薄膜與上述支持基材貼合,獲得依序配置有上述支持基材、上述聚醯亞胺樹脂層及上述保護膜之積層體,並將保護膜自上述積層體剝離,而製造上述積層基板。The method for manufacturing a laminated substrate according to claim 8, wherein a laminated film having the polyimide resin layer in a film shape, and a protective film arranged on one surface of the polyimide resin layer, and the supporting base material By bonding, a laminate in which the supporting base material, the polyimide resin layer, and the protective film are arranged in this order is obtained, and the protective film is peeled from the laminate to produce the laminate substrate.
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