JP2020069713A - Laminate, laminate conduction checking method, and method for manufacturing electronic device - Google Patents

Laminate, laminate conduction checking method, and method for manufacturing electronic device Download PDF

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Publication number
JP2020069713A
JP2020069713A JP2018204918A JP2018204918A JP2020069713A JP 2020069713 A JP2020069713 A JP 2020069713A JP 2018204918 A JP2018204918 A JP 2018204918A JP 2018204918 A JP2018204918 A JP 2018204918A JP 2020069713 A JP2020069713 A JP 2020069713A
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Prior art keywords
substrate
electronic device
main surface
polyimide resin
resin layer
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JP7103163B2 (en
Inventor
有一 日野
Yuichi Hino
有一 日野
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AGC Inc
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Asahi Glass Co Ltd
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Priority to JP2018204918A priority Critical patent/JP7103163B2/en
Priority to TW108138152A priority patent/TWI841614B/en
Priority to KR1020190133988A priority patent/KR20200049605A/en
Priority to CN201911044614.9A priority patent/CN111114058B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays

Landscapes

  • Laminated Bodies (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

To provide a laminate which can accurately perform a conduction check of a member for electronic device formed on a polyimide resin substrate.SOLUTION: A laminate 10 includes a supporting base material 12 made of glass and a polyimide resin substrate 16 arranged thereon, in which the polyimide resin substrate 16 has a first main surface 16a on the side of the supporting base material 12, a second main surface 16b on an opposite side to the first main surface and an end face 16c connected to the first main surface 16a and the second main surface 16b, and at least a part of the end face 16c is an inclined surface projecting toward the first main surface 16b from the second main surface 16a.SELECTED DRAWING: Figure 1

Description

本発明は、積層体、導通チェック方法、および、電子デバイスの製造方法に関する。   The present invention relates to a laminated body, a continuity check method, and an electronic device manufacturing method.

太陽電池（ＰＶ）；液晶パネル（ＬＣＤ）；有機ＥＬパネル（ＯＬＥＤ）；電磁波、Ｘ線、紫外線、可視光線、赤外線などを感知する受信センサーパネル；等の電子デバイスの薄型化、軽量化が進行している。それに伴い、電子デバイスに用いるポリイミド樹脂基板などの基板の薄板化も進行している。薄板化により基板の強度が不足すると、基板のハンドリング性が低下し、基板上に電子デバイス用部材を形成する工程（部材形成工程）などにおいて問題が生じる場合がある。   Solar cells (PV); Liquid crystal panels (LCD); Organic EL panels (OLED); Receiving sensor panels that detect electromagnetic waves, X-rays, ultraviolet rays, visible rays, infrared rays, etc .; is doing. Along with this, thinning of substrates such as polyimide resin substrates used for electronic devices is also progressing. If the strength of the substrate is insufficient due to the thinning, the handling property of the substrate is deteriorated, which may cause a problem in the step of forming an electronic device member on the substrate (member forming step).

そこで、最近では、基板のハンドリング性を良好にするため、支持基材上にポリイミド樹脂基板を配置した積層体を用いる技術が提案されている（特許文献１）。この技術においては、積層体のポリイミド樹脂基板上に電子デバイス用部材を形成し、その後、電子デバイス用部材が形成されたポリイミド樹脂基板（すなわち、電子デバイス）を分離する。   Therefore, recently, in order to improve the handleability of the substrate, a technique using a laminate in which a polyimide resin substrate is arranged on a supporting base material has been proposed (Patent Document 1). In this technique, an electronic device member is formed on a laminated polyimide resin substrate, and then the polyimide resin substrate (that is, an electronic device) on which the electronic device member is formed is separated.

特開２０１５−１０４８４３号公報JP, 2005-104843, A

本発明者は、支持基材上にポリイミド樹脂基板が配置された積層体を用いて電子デバイスを製造する途中過程において、電子デバイス用部材が正常に作動するか否かを確認するために、導通チェックを行なった。
より具体的には、ポリイミド樹脂基板上の電子デバイス用部材から外部に延びる配線をスパッタにより形成し、テスタを用いて、導通チェックを行なった。
その結果、本発明者は、スパッタにより形成される配線がポリイミド樹脂基板の端面において薄くなったり断線したりしやすいこと、および、それにより、導通チェックが正確に行なわれず、精度が不十分である場合があることを見出した。 The present inventor, in the middle of the process of manufacturing an electronic device using a laminate in which a polyimide resin substrate is arranged on a supporting substrate, in order to confirm whether the member for electronic device operates normally, Checked.
More specifically, a wiring extending from the electronic device member on the polyimide resin substrate to the outside was formed by sputtering, and a continuity check was performed using a tester.
As a result, the present inventor has a tendency that the wiring formed by the sputtering is easily thinned or broken at the end surface of the polyimide resin substrate, and accordingly, the continuity check cannot be performed accurately and the accuracy is insufficient. I found that there are cases.

そこで、本発明は、ポリイミド樹脂基板上に形成される電子デバイス用部材の導通チェックを精度良く行なえる積層体を提供することを目的とする。
さらに、本発明は、上記積層体を用いた導通チェック方法および電子デバイスの製造方法を提供することも目的とする。 Therefore, an object of the present invention is to provide a laminated body that can accurately check the continuity of electronic device members formed on a polyimide resin substrate.
Another object of the present invention is to provide a continuity check method and an electronic device manufacturing method using the above-mentioned laminated body.

本発明者らは、鋭意検討した結果、以下の構成により上記目的を達成できることを見出した。   As a result of earnest studies, the present inventors have found that the above object can be achieved by the following constitution.

［１］ガラス製の支持基材と、上記支持基材の上に配置されるポリイミド樹脂基板と、を備え、上記ポリイミド樹脂基板は、上記支持基材側の第１主面と、上記第１主面とは反対側の第２主面と、上記第１主面と上記第２主面とに接続する端面とを有し、上記端面の少なくとも一部が、上記第２主面から上記第１主面に向かうに従い突出する傾斜面である、積層体。
［２］上記傾斜面と、上記第１主面とのなす角度が、１０°以上である、上記［１］に記載の積層体。
［３］上記支持基材の厚さが、０．３ｍｍ以上である、上記［１］または［２］に記載の積層体。
［４］上記支持基材と上記ポリイミド樹脂基板との間に、さらに、シリコーン樹脂層を備える、上記［１］〜［３］のいずれかに記載の積層体。
［５］上記［１］〜［４］のいずれかに記載の積層体の上記ポリイミド樹脂基板の上記第２主面の上に電子デバイス用部材を形成する工程と、上記電子デバイス用部材から外部に延びる配線をスパッタまたは蒸着により形成する工程と、上記配線をテスタに接続し、上記電子デバイス用部材の導通チェックを行なう工程と、を備え、上記配線は、上記電子デバイス用部材から延びて、上記ポリイミド樹脂基板の上記第２主面、上記ポリイミド樹脂基板の上記傾斜面、および、上記支持基材の表面に沿って形成される、導通チェック方法。
［６］上記［１］〜［４］のいずれかに記載の積層体の上記ポリイミド樹脂基板の上記第２主面の上に電子デバイス用部材を形成し、電子デバイス用部材付き積層体を得る部材形成工程と、上記電子デバイス用部材付き積層体から、上記ポリイミド樹脂基板および上記電子デバイス用部材を有する電子デバイスを得る分離工程と、を備える電子デバイスの製造方法。 [1] A support base made of glass and a polyimide resin substrate disposed on the support base, the polyimide resin substrate having a first main surface on the support base side and the first main surface. It has a 2nd main surface on the opposite side to a main surface, and an end surface which connects the 1st above-mentioned main surface and the 2nd above-mentioned main surface, and at least one copy of the above-mentioned end surface is from the 2nd above-mentioned main surface to the above-mentioned. 1 A laminated body, which is an inclined surface protruding toward the main surface.
[2] The laminated body according to [1], wherein an angle formed by the inclined surface and the first main surface is 10 ° or more.
[3] The laminated body according to the above [1] or [2], wherein the thickness of the supporting base material is 0.3 mm or more.
[4] The laminate according to any one of [1] to [3], further including a silicone resin layer between the supporting base material and the polyimide resin substrate.
[5] A step of forming an electronic device member on the second main surface of the polyimide resin substrate of the laminated body according to any one of [1] to [4], and externally from the electronic device member. A step of forming a wiring extending to a by sputtering or vapor deposition, connecting the wiring to a tester, and performing a continuity check of the electronic device member, the wiring, extending from the electronic device member, A conduction check method, which is formed along the second main surface of the polyimide resin substrate, the inclined surface of the polyimide resin substrate, and the surface of the supporting base material.
[6] An electronic device member is formed on the second main surface of the polyimide resin substrate of the laminate according to any one of [1] to [4] to obtain an electronic device member-attached laminate. A method of manufacturing an electronic device, comprising: a member forming step; and a separation step of obtaining an electronic device having the polyimide resin substrate and the electronic device member from the electronic device member-attached laminate.

本発明によれば、ポリイミド樹脂基板上に形成される電子デバイス用部材の導通チェックを精度良く行なえる積層体を提供することができる。
さらに、本発明によれば、上記積層体を用いた導通チェック方法および電子デバイスの製造方法を提供することもできる。 ADVANTAGE OF THE INVENTION According to this invention, the laminated body which can perform the conduction check of the member for electronic devices formed on a polyimide resin substrate accurately can be provided.
Furthermore, according to the present invention, it is also possible to provide a continuity check method and an electronic device manufacturing method using the above-mentioned laminated body.

第１の実施形態の積層体を模式的に示す断面図である。It is sectional drawing which shows the laminated body of 1st Embodiment typically. 導通チェックの一例を示す断面図である。It is sectional drawing which shows an example of a continuity check. 導通チェックの別の一例を示す断面図である。It is sectional drawing which shows another example of a continuity check. 第２の実施形態の積層体を模式的に示す断面図である。It is sectional drawing which shows the laminated body of 2nd Embodiment typically. ポリイミド樹脂基板の端部を拡大して示す断面図である。It is sectional drawing which expands and shows the edge part of a polyimide resin substrate. 部材形成工程を模式的に示す断面図である。It is sectional drawing which shows a member formation process typically. 分離工程を模式的に示す断面図である。It is sectional drawing which shows a separation process typically.

以下、本発明の実施形態について図面を参照して説明する。ただし、本発明は、以下の実施形態に制限されることはなく、本発明の範囲を逸脱することなく、以下の実施形態に種々の変形および置換を加えることができる。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments, and various modifications and substitutions can be added to the following embodiments without departing from the scope of the present invention.

＜積層体＞
（第１の実施形態）
図１は、第１の実施形態の積層体１０を模式的に示す断面図である。
第１の実施形態の積層体１０は、ガラス製の支持基材１２、および、支持基材１２の上に配置されるポリイミド樹脂基板１６（以下、単に「基板１６」と記載する場合がある）を備える。
基板１６は、支持基材１２側の第１主面１６ａ、第１主面１６ａとは反対側の第２主面１６ｂ、および、第１主面１６ａと第２主面１６ｂとに接続する端面１６ｃを有する。
基板１６の端面１６ｃの少なくとも一部は、第２主面１６ｂから第１主面１６ａに向かうに従い突出する傾斜面１６ｄである。
第１の実施形態の積層体１０においては、基板１６の第１主面１６ａが、支持基材１２に接する。支持基材１２は、基板１６を補強する補強板として機能する。第１の実施形態の積層体１０に、支持基材１２と基板１６とを引き剥がす方向の応力を加えると、支持基材１２と基板１６とに分離する。 <Laminate>
(First embodiment)
FIG. 1 is a cross-sectional view schematically showing the laminated body 10 of the first embodiment.
The laminated body 10 of the first embodiment includes a glass-made supporting base material 12 and a polyimide resin substrate 16 arranged on the supporting base material 12 (hereinafter sometimes simply referred to as “substrate 16”). Equipped with.
The substrate 16 includes a first main surface 16a on the support base 12 side, a second main surface 16b on the side opposite to the first main surface 16a, and an end surface connected to the first main surface 16a and the second main surface 16b. 16c.
At least a part of the end surface 16c of the substrate 16 is an inclined surface 16d that protrudes from the second main surface 16b toward the first main surface 16a.
In the laminated body 10 of the first embodiment, the first main surface 16 a of the substrate 16 contacts the supporting base material 12. The support base 12 functions as a reinforcing plate that reinforces the substrate 16. When stress is applied to the laminated body 10 of the first embodiment in the direction of peeling the supporting base material 12 and the substrate 16, the supporting base material 12 and the substrate 16 are separated.

詳細は後述するが、積層体１０の基板１６の第２主面１６ｂの上に、電子デバイス用部材を形成し、その後、電子デバイス用部材が形成された基板１６（すなわち、電子デバイス）を分離する。こうして、電子デバイスを製造する。
電子デバイスを製造する途中過程において、電子デバイス用部材が正常に作動するか否かを確認するために、導通チェックを行なう。 Although details will be described later, an electronic device member is formed on the second main surface 16b of the substrate 16 of the laminated body 10, and then the substrate 16 (that is, the electronic device) on which the electronic device member is formed is separated. To do. In this way, an electronic device is manufactured.
In the course of manufacturing the electronic device, a continuity check is performed in order to confirm whether the electronic device member operates normally.

図２は、導通チェックの一例を示す断面図である。まず、基板１６の第２主面１６ｂの上に、電子デバイス用部材２０を形成する。次いで、電子デバイス用部材２０から外部に延びる配線４０を、スパッタ；ＣＶＤ（chemical vapor deposition）などの蒸着；等（以下、これらをまとめて「スパッタ等」ともいう）により形成する。スパッタ等はスパッタまたは蒸着が好ましい。配線４０は、例えば、導電性を有する金属からなる。
配線４０は、より詳細には、図２に示すように、電子デバイス用部材２０から延びて、基板１６の第２主面１６ｂ、傾斜面１６ｄ、および、支持基材１２の表面に沿って形成される。配線４０を、図示しないテスタに接続し、電子デバイス用部材２０の導通チェックを行なう。 FIG. 2 is a sectional view showing an example of the continuity check. First, the electronic device member 20 is formed on the second main surface 16b of the substrate 16. Next, the wiring 40 extending from the electronic device member 20 to the outside is formed by sputtering; vapor deposition such as CVD (chemical vapor deposition); etc. (hereinafter collectively referred to as “sputtering etc.”). Sputtering or the like is preferably sputtering or vapor deposition. The wiring 40 is made of a conductive metal, for example.
More specifically, as shown in FIG. 2, the wiring 40 extends from the electronic device member 20 and is formed along the second major surface 16b of the substrate 16, the inclined surface 16d, and the surface of the support base 12. To be done. The wiring 40 is connected to a tester (not shown) to check the continuity of the electronic device member 20.

ところで、基板１６の端面１６ｃが傾斜していない垂直面であり、かつ、この垂直面に沿って配線４０をスパッタ等により形成する場合がある。
図３は、導通チェックの別の一例を示す断面図である。図３に示すように、垂直面である端面１６ｃに沿って、配線４０をスパッタ等により形成する場合がある。この場合、図３に示すように、垂直面である端面１６ｃに対しては、配線４０が付着しにくく、配線４０が部分的に薄くなったり断線したりしやすい。配線４０が部分的に薄くなったり断線したりした状態においては、電子デバイス用部材２０の導通チェックが正確に行なわれず、精度が不十分となる場合がある。 By the way, there are cases where the end surface 16c of the substrate 16 is a vertical surface that is not inclined, and the wiring 40 is formed along this vertical surface by sputtering or the like.
FIG. 3 is a sectional view showing another example of the continuity check. As shown in FIG. 3, the wiring 40 may be formed along the vertical end surface 16c by sputtering or the like. In this case, as shown in FIG. 3, the wiring 40 is less likely to adhere to the vertical end surface 16c, and the wiring 40 is likely to be partially thinned or broken. When the wiring 40 is partially thinned or broken, the conduction check of the electronic device member 20 may not be accurately performed, and the accuracy may be insufficient.

しかしながら、図２に基づいて説明したように、第１の実施形態においては、配線４０は、垂直面ではない傾斜面１６ｄに沿って形成されるので、部分的に薄くなったり断線したりしにくい。このため、電子デバイス用部材２０の導通チェックは正確に行なわれ、精度は良好となる。   However, as described with reference to FIG. 2, in the first embodiment, the wiring 40 is formed along the inclined surface 16d that is not a vertical surface, so that it is difficult for the wiring 40 to be partially thinned or broken. .. Therefore, the conduction check of the electronic device member 20 is accurately performed, and the accuracy is good.

基板１６の形状（主面の形状）が矩形状である場合、４つある端面１６ｃの全てが傾斜面１６ｄであることが好ましい。これにより、どの傾斜面１６ｄに配線４０を形成する場合であっても、導通チェックの精度が良好となる。   When the shape of the substrate 16 (the shape of the main surface) is rectangular, it is preferable that all the four end surfaces 16c are the inclined surfaces 16d. As a result, the accuracy of the continuity check is good no matter which inclined surface 16d the wiring 40 is formed on.

（第２の実施形態）
図４は、第２の実施形態の積層体１０を模式的に示す断面図である。第１の実施形態と同じ部分については、同じ符号で示し、説明も省略する（以下、同様）。
第２の実施形態の積層体１０は、支持基材１２と、シリコーン樹脂層１４と、基板１６と、をこの順で備える。換言すれば、第２の実施形態の積層体１０は、支持基材１２と基板１６との間に、さらに、シリコーン樹脂層１４を備える。シリコーン樹脂層１４は、一方の面（第１主面１４ａ）が支持基材１２に接し、他方の面（第２主面１４ｂ）が基板１６の第１主面１６ａに接する。 (Second embodiment)
FIG. 4 is a cross-sectional view schematically showing the laminated body 10 of the second embodiment. The same parts as those in the first embodiment are denoted by the same reference numerals and the description thereof will be omitted (the same applies hereinafter).
The laminated body 10 of the second embodiment includes a supporting base material 12, a silicone resin layer 14, and a substrate 16 in this order. In other words, the laminated body 10 of the second embodiment further includes the silicone resin layer 14 between the supporting base material 12 and the substrate 16. The silicone resin layer 14 has one surface (first main surface 14a) in contact with the supporting base material 12 and the other surface (second main surface 14b) in contact with the first main surface 16a of the substrate 16.

以下、シリコーン樹脂層１４を有する積層体１０について言及する場合は、特に断わりの無い限り、第２の実施形態の積層体１０を意味する。   Hereinafter, when referring to the laminate 10 having the silicone resin layer 14, the laminate 10 of the second embodiment is meant unless otherwise specified.

第２の実施形態の積層体１０においても、基板１６の端面１６ｃの少なくとも一部は、第２主面１６ｂから第１主面１６ａに向かうに従い突出する傾斜面１６ｄである。
図４に示すように、シリコーン樹脂層１４の端面についても、基板１６の傾斜面１６ｄと連続する端面である場合には、傾斜面１６ｄと同様に傾斜した傾斜面１４ｄであることが好ましい。
第２の実施形態においても、配線４０は、垂直面ではない傾斜面１６ｄに沿って形成されるので、部分的に薄くなったり断線したりしにくい。このため、電子デバイス用部材２０の導通チェックは正確に行なわれ、精度は良好となる。 Also in the laminated body 10 of the second embodiment, at least a part of the end surface 16c of the substrate 16 is an inclined surface 16d that protrudes from the second main surface 16b toward the first main surface 16a.
As shown in FIG. 4, when the end surface of the silicone resin layer 14 is also an end surface continuous with the inclined surface 16d of the substrate 16, it is preferable that the inclined surface 14d is inclined similarly to the inclined surface 16d.
Also in the second embodiment, since the wiring 40 is formed along the inclined surface 16d which is not a vertical surface, it is difficult for the wiring 40 to be partially thinned or broken. Therefore, the conduction check of the electronic device member 20 is accurately performed, and the accuracy is good.

第２の実施形態の積層体１０においては、支持基材１２およびシリコーン樹脂層１４からなる２層部分（以下、「シリコーン樹脂層付き支持基材１８」ともいう）は、基板１６を補強する補強板として機能する。   In the laminated body 10 of the second embodiment, the two-layer portion including the support base material 12 and the silicone resin layer 14 (hereinafter, also referred to as “support base material with silicone resin layer 18”) is reinforced to reinforce the substrate 16. Functions as a board.

積層体１０に加熱処理が施されることにより、シリコーン樹脂層１４と基板１６との間の剥離強度よりも、支持基材１２とシリコーン樹脂層１４との間の剥離強度の方が大きくなることが好ましい。これは、加熱処理によって、支持基材１２のヒドロキシ基とシリコーン樹脂層１４のヒドロキシ基とが結合すること等によって生じ得る。
その結果、支持基材１２と基板１６とを引き剥がす方向の応力が加えられると、シリコーン樹脂層１４と基板１６との間で剥離する。 By subjecting the laminate 10 to the heat treatment, the peel strength between the support base material 12 and the silicone resin layer 14 becomes greater than the peel strength between the silicone resin layer 14 and the substrate 16. Is preferred. This may be caused by the bonding of the hydroxy groups of the supporting base material 12 and the hydroxy groups of the silicone resin layer 14 due to the heat treatment.
As a result, when stress is applied in the direction of peeling the supporting base 12 and the substrate 16, the silicone resin layer 14 and the substrate 16 are peeled from each other.

（傾斜面の角度）
図５は、ポリイミド樹脂基板１６の端部を拡大して示す断面図である。基板１６において、傾斜面１６ｄと第１主面１６ａとのなす角度θ１は、傾斜面１６ｄは垂直面ではないことから、当然に、９０°未満である。 (Angle of inclined surface)
FIG. 5 is an enlarged cross-sectional view showing an end portion of the polyimide resin substrate 16. In the substrate 16, the angle θ1 formed by the inclined surface 16d and the first main surface 16a is naturally less than 90 ° because the inclined surface 16d is not a vertical surface.

一方、傾斜面１６ｄの角度θ１が鋭角すぎると、支持基材１２から基板１６を分離する際に、支持基材１２と基板１６との間に、鋭利な刃物状のものを差し込みにくい場合がある。このため、支持基材１２と基板１６との間に鋭利な刃物状のものを差し込みやすく、剥離性に優れるという理由から、傾斜面１６ｄと第１主面１６ａとのなす角度θ１は、１０°以上が好ましく、３０°以上がより好ましく、５０°以上がさらに好ましい。
なお、基板１６の傾斜面１６ｄは、刃物を用いて基板１６を切断して形成される切断面であることが好ましい。この場合、例えば、塗布液が平面上で広がって形成される面と比較して、上記角度が得られやすい。 On the other hand, if the angle θ1 of the inclined surface 16d is too acute, it may be difficult to insert a sharp blade-like object between the supporting base 12 and the substrate 16 when the substrate 16 is separated from the supporting base 12. .. Therefore, the angle θ1 formed by the inclined surface 16d and the first main surface 16a is 10 ° because it is easy to insert a sharp knife-shaped object between the support base 12 and the substrate 16 and is excellent in releasability. The above is preferable, 30 ° or more is more preferable, and 50 ° or more is further preferable.
The inclined surface 16d of the substrate 16 is preferably a cut surface formed by cutting the substrate 16 with a blade. In this case, for example, the above angle can be easily obtained as compared with a surface formed by spreading the coating liquid on a flat surface.

基板１６における、傾斜面１６ｄと第１主面１６ａとのなす角度θ１は、三鷹光器株式会社社製の非接触表面性状測定装置「ＰＦ−６０」を用いて、基板１６の断面形状から求める。より詳細には、図５に示すように、基板１６の断面図から、線分ＡＢの長さ、および、線分ＡＣの長さを測定し、下記式から、角度θ１を算出する。
θ１＝ａｒｃｔａｎ（ＡＣ／ＡＢ） The angle θ1 formed by the inclined surface 16d and the first main surface 16a in the substrate 16 is obtained from the cross-sectional shape of the substrate 16 using a non-contact surface texture measuring device “PF-60” manufactured by Mitaka Koki Co., Ltd. .. More specifically, as shown in FIG. 5, the length of the line segment AB and the length of the line segment AC are measured from the cross-sectional view of the substrate 16, and the angle θ1 is calculated from the following equation.
θ1 = arctan (AC / AB)

なお、シリコーン樹脂層１４の傾斜面１４ｄは、図５に示すように、基板１６の傾斜面１６ｄと連続した面であることが好ましい。このとき、シリコーン樹脂層１４において、傾斜面１４ｄと第１主面１４ａとのなす角度θ２は、傾斜面１６ｄと第１主面１６ａとのなす角度θ１と同じであることが好ましい。角度θ２の測定方法は、角度θ１と同様である。   The inclined surface 14d of the silicone resin layer 14 is preferably a surface continuous with the inclined surface 16d of the substrate 16 as shown in FIG. At this time, in the silicone resin layer 14, the angle θ2 formed by the inclined surface 14d and the first main surface 14a is preferably the same as the angle θ1 formed by the inclined surface 16d and the first main surface 16a. The method of measuring the angle θ2 is the same as that of the angle θ1.

以下では、まず、積層体１０を構成する各層（支持基材１２、基板１６、シリコーン樹脂層１４）について詳述し、その後、積層体１０の製造方法について詳述する。   Below, each layer (support base material 12, substrate 16, silicone resin layer 14) which constitutes layered product 10 is explained in full detail first, and the manufacturing method of layered product 10 is explained in full detail after that.

＜支持基材＞
支持基材１２は、基板１６を支持して補強する部材であり、例えば、ガラス板である。
支持基材１２は、ガラス製であることから、表面にヒドロキシ基を有する。
ガラスの種類は特に制限されないが、無アルカリホウケイ酸ガラス、ホウケイ酸ガラス、ソーダライムガラス、高シリカガラス、その他の酸化ケイ素を主な成分とする酸化物系ガラスが好ましい。酸化物系ガラスとしては、酸化物換算による酸化ケイ素の含有量が４０〜９０質量％のガラスが好ましい。
ガラス板として、より具体的には、無アルカリホウケイ酸ガラスからなるガラス板（ＡＧＣ株式会社製商品名「ＡＮ１００」）が挙げられる。
ガラス板の製造方法は特に制限されず、通常、ガラス原料を溶融し、溶融ガラスを板状に成形して得られる。このような成形方法は、一般的なものであってよく、例えば、フロート法、フュージョン法、スロットダウンドロー法等が挙げられる。 <Supporting substrate>
The support base 12 is a member that supports and reinforces the substrate 16, and is, for example, a glass plate.
Since the supporting substrate 12 is made of glass, it has a hydroxy group on the surface.
The type of glass is not particularly limited, but non-alkali borosilicate glass, borosilicate glass, soda lime glass, high silica glass, and other oxide glass containing silicon oxide as a main component are preferable. As the oxide-based glass, glass having a silicon oxide content of 40 to 90 mass% in terms of oxide is preferable.
Specific examples of the glass plate include a glass plate made of non-alkali borosilicate glass (trade name “AN100” manufactured by AGC Corporation).
The method for producing the glass plate is not particularly limited, and is usually obtained by melting a glass raw material and shaping the molten glass into a plate shape. Such a molding method may be a general one, and examples thereof include a float method, a fusion method and a slot down draw method.

支持基材１２の厚さは、基板１６よりも厚くてもよいし、薄くてもよい。積層体１０の取り扱い性の点からは、支持基材１２の厚さは基板１６よりも厚いことが好ましい。
支持基材１２は、フレキシブルでないことが好ましい。そのため、支持基材１２の厚さは、０．３ｍｍ以上が好ましく、０．５ｍｍ以上がより好ましい。
一方、支持基材１２の厚さは、１．０ｍｍ以下が好ましい。 The supporting base material 12 may be thicker or thinner than the substrate 16. From the viewpoint of handleability of the laminated body 10, the thickness of the supporting base material 12 is preferably larger than that of the substrate 16.
The support substrate 12 is preferably not flexible. Therefore, the thickness of the support substrate 12 is preferably 0.3 mm or more, more preferably 0.5 mm or more.
On the other hand, the thickness of the support base 12 is preferably 1.0 mm or less.

＜基板（ポリイミド樹脂基板）＞
基板１６は、ポリイミド樹脂基板である。
ポリイミド樹脂基板は、ポリイミド樹脂からなる基板であり、例えば、ポリイミドフィルムが用いられ、その市販品としては、東洋紡株式会社製の「ゼノマックス」、宇部興産株式会社製の「ユーピレックス２５Ｓ」などが挙げられる。
ポリイミド樹脂基板上に電子デバイスの高精細な配線等を形成するために、ポリイミド樹脂基板の表面は平滑であることが好ましい。具体的には、ポリイミド樹脂基板の表面粗度Ｒａは、５０ｎｍ以下が好ましく、３０ｎｍ以下がより好ましく、１０ｎｍ以下がさらに好ましい。
ポリイミド樹脂基板の厚さは、製造工程でのハンドリング性の観点から、１μｍ以上が好ましく、５μｍ以上がより好ましく、１０μｍ以上がさらに好ましい。柔軟性の観点からは、１ｍｍ以下が好ましく、０．２ｍｍ以下がより好ましい。
ポリイミド樹脂基板の熱膨張係数は、電子デバイスや支持基材との熱膨張係数差が小さい方が加熱後または冷却後の積層体の反りを抑制できるため好ましい。具体的には、ポリイミド樹脂基板と支持基材との熱膨張係数の差は、０〜９０×１０-６／℃が好ましく、０〜３０×１０-６／℃がより好ましい。 <Substrate (polyimide resin substrate)>
The substrate 16 is a polyimide resin substrate.
The polyimide resin substrate is a substrate made of a polyimide resin, for example, a polyimide film is used, and examples of commercially available products thereof include "Xenomax" manufactured by Toyobo Co., Ltd. and "Upilex 25S" manufactured by Ube Industries, Ltd. Be done.
The surface of the polyimide resin substrate is preferably smooth in order to form high-definition wiring or the like of the electronic device on the polyimide resin substrate. Specifically, the surface roughness Ra of the polyimide resin substrate is preferably 50 nm or less, more preferably 30 nm or less, still more preferably 10 nm or less.
The thickness of the polyimide resin substrate is preferably 1 μm or more, more preferably 5 μm or more, still more preferably 10 μm or more, from the viewpoint of handleability in the manufacturing process. From the viewpoint of flexibility, 1 mm or less is preferable, and 0.2 mm or less is more preferable.
Regarding the coefficient of thermal expansion of the polyimide resin substrate, it is preferable that the difference in the coefficient of thermal expansion between the polyimide resin substrate and the electronic device or the supporting base material is small because warpage of the laminate after heating or cooling can be suppressed. Specifically, the difference in coefficient of thermal expansion between the polyimide resin substrate and the supporting base material is preferably 0 to 90 × 10 −6 / ° C., more preferably 0 to 30 × 10 −6 / ° C.

基板１６の面積（第１主面１６ａおよび第２主面１６ｂの面積）は、特に制限されないが、電子デバイスの生産性の点から、３００ｃｍ２以上が好ましい。
基板１６の形状も特に制限されず、矩形状であっても、円形状であってもよい。基板１６には、オリエンテーションフラット（いわゆるオリフラ。基板の外周に形成された平坦部分）や、ノッチ（基板の外周縁に形成された一つまたはそれ以上のＶ型の切欠き）が形成されていてもよい。 The area of the substrate 16 (areas of the first main surface 16a and the second main surface 16b) is not particularly limited, but is preferably 300 cm 2 or more from the viewpoint of productivity of electronic devices.
The shape of the substrate 16 is not particularly limited, and may be rectangular or circular. The substrate 16 has an orientation flat (so-called orientation flat; a flat portion formed on the outer periphery of the substrate) and a notch (one or more V-shaped notches formed on the outer peripheral edge of the substrate). Good.

ただし、上述したように、基板１６の端面１６ｃの少なくとも一部は、第２主面１６ｂから第１主面１６ａに向かうに従い突出する傾斜面１６ｄである。端面１６ｃの全部が傾斜面１６ｄであることが好ましい。
基板１６において、傾斜面１６ｄと第１主面１６ａとのなす角度についても、上述したとおりである。 However, as described above, at least a part of the end surface 16c of the substrate 16 is the inclined surface 16d that protrudes from the second main surface 16b toward the first main surface 16a. It is preferable that the entire end surface 16c is the inclined surface 16d.
In the substrate 16, the angle formed by the inclined surface 16d and the first main surface 16a is also as described above.

＜シリコーン樹脂層＞
シリコーン樹脂層１４は、主に、シリコーン樹脂からなる。シリコーン樹脂の構造は特に制限されない。シリコーン樹脂は、通常、硬化処理によってシリコーン樹脂となり得る硬化性シリコーンを硬化（架橋硬化）して得られる。
硬化性シリコーンは、その硬化機構により縮合反応型シリコーン、付加反応型シリコーン、紫外線硬化型シリコーンおよび電子線硬化型シリコーンに分類されるが、いずれも使用することができる。硬化性シリコーンの重量平均分子量（Ｍｗ）は、５，０００〜６０，０００が好ましく、５，０００〜３０，０００がより好ましい。 <Silicone resin layer>
The silicone resin layer 14 is mainly made of silicone resin. The structure of the silicone resin is not particularly limited. The silicone resin is usually obtained by curing (crosslinking and curing) a curable silicone that can become a silicone resin by a curing treatment.
Curable silicones are classified into condensation reaction type silicones, addition reaction type silicones, ultraviolet ray curing type silicones and electron beam curing type silicones depending on the curing mechanism, and any of them can be used. The weight average molecular weight (Mw) of the curable silicone is preferably 5,000 to 60,000, more preferably 5,000 to 30,000.

シリコーン樹脂層１４の製造方法としては、基板１６の第１主面１６ａに上記シリコーン樹脂となる硬化性シリコーンを含む硬化性組成物を塗布して、必要に応じて溶媒を除去して、塗膜を形成して、塗膜中の硬化性シリコーンを硬化させて、シリコーン樹脂層１４とすることが好ましい。
硬化性組成物は、硬化性シリコーンのほかに、溶媒、白金触媒（硬化性シリコーンとして付加反応型シリコーンを用いる場合）、レベリング剤、金属化合物などを含んでいてもよい。金属化合物に含まれる金属元素としては、３ｄ遷移金属、４ｄ遷移金属、ランタノイド系金属、ビスマス（Ｂｉ）、アルミニウム（Ａｌ）、および、スズ（Ｓｎ）などが挙げられる。金属化合物の含有量は、特に制限されず、適宜調整される。 As a method for producing the silicone resin layer 14, a curable composition containing a curable silicone to be the silicone resin is applied to the first main surface 16a of the substrate 16 and the solvent is removed if necessary to form a coating film. Is preferably formed to cure the curable silicone in the coating film to form the silicone resin layer 14.
In addition to the curable silicone, the curable composition may include a solvent, a platinum catalyst (when an addition reaction type silicone is used as the curable silicone), a leveling agent, a metal compound, and the like. Examples of the metal element contained in the metal compound include 3d transition metal, 4d transition metal, lanthanoid metal, bismuth (Bi), aluminum (Al), and tin (Sn). The content of the metal compound is not particularly limited and is appropriately adjusted.

シリコーン樹脂層１４は、ヒドロキシ基を有することが好ましい。シリコーン樹脂層１４のシリコーン樹脂を構成するＳｉ−Ｏ−Ｓｉ結合の一部が切れて、ヒドロキシ基が現れ得る。また、縮合反応型シリコーンを用いる場合には、そのヒドロキシ基が、シリコーン樹脂層１４のヒドロキシ基になり得る。   The silicone resin layer 14 preferably has a hydroxy group. A part of the Si—O—Si bond constituting the silicone resin of the silicone resin layer 14 may be broken, and a hydroxy group may appear. Further, when the condensation reaction type silicone is used, the hydroxy group thereof can become the hydroxy group of the silicone resin layer 14.

シリコーン樹脂層１４の厚さは、１００μｍ以下が好ましく、５０μｍ以下がより好ましく、３０μｍ以下がさらに好ましい。一方、シリコーン樹脂層１４の厚さは、１μｍ超が好ましく、４μｍ以上がより好ましい。上記厚さは、５点以上の任意の位置におけるシリコーン樹脂層１４の厚さを接触式膜厚測定装置で測定し、それらを算術平均したものである。   The thickness of the silicone resin layer 14 is preferably 100 μm or less, more preferably 50 μm or less, still more preferably 30 μm or less. On the other hand, the thickness of the silicone resin layer 14 is preferably more than 1 μm, more preferably 4 μm or more. The above-mentioned thickness is obtained by measuring the thickness of the silicone resin layer 14 at arbitrary positions of 5 points or more by a contact type film thickness measuring device and arithmetically averaging them.

そして、上述したように、シリコーン樹脂層１４の端面についても、基板１６の傾斜面１６ｄと連続する端面である場合には、傾斜面１６ｄと同様に傾斜した傾斜面であることが好ましい。   As described above, the end surface of the silicone resin layer 14 is also preferably an inclined surface similar to the inclined surface 16d when the end surface is continuous with the inclined surface 16d of the substrate 16.

＜第１の実施形態の積層体の製造方法＞
第１の実施形態の積層体１０を製造する方法は、支持基材１２の表面上に、基板１６を積層させる方法が好ましい。
このとき、例えば、支持基材１２上に基板１６を積層させてから、支持基材１２上の基板１６の端部を斜めに切断（刃を傾けて切断）することにより、基板１６の傾斜面１６ｄを形成する（態様Ａ）。態様Ａの場合、支持基材１２に固定された状態で基板１６を切断するため、良好な寸法精度を得やすい。
また、あらかじめ基板１６に傾斜面１６ｄを形成しておき、傾斜面１６ｄが形成された基板１６を、支持基材１２の表面上に積層させてもよい（態様Ｂ）。態様Ｂの場合、切断した基板１６の端材（捨て材）を処理する工程を途中に設ける必要がないため、時間的な制約を受けにくい。
なお、態様Ａであっても態様Ｂであっても、支持基材１２に基板１６を積層させる前に、支持基材１２の表面上に公知のシランカップリング剤を塗布し、その後、シランカップリング剤が塗布された支持基材１２の表面上に基板１６を積層できる。 <The manufacturing method of the laminated body of 1st Embodiment>
The method of manufacturing the laminated body 10 of the first embodiment is preferably a method of laminating the substrate 16 on the surface of the supporting base material 12.
At this time, for example, by stacking the substrate 16 on the supporting base material 12 and then obliquely cutting the end portion of the substrate 16 on the supporting base material 12 (cutting by inclining the blade), the inclined surface of the substrate 16 is formed. 16d is formed (Aspect A). In the case of Aspect A, the substrate 16 is cut in a state of being fixed to the supporting base 12, so that it is easy to obtain good dimensional accuracy.
Alternatively, the inclined surface 16d may be formed on the substrate 16 in advance, and the substrate 16 on which the inclined surface 16d is formed may be laminated on the surface of the support base 12 (aspect B). In the case of Aspect B, it is not necessary to provide a step of processing the cut material (discarded material) of the cut substrate 16 in the middle, and therefore, it is hard to be limited in time.
In addition, in either mode A or mode B, a known silane coupling agent is applied on the surface of the support base 12 before the substrate 16 is laminated on the support base 12, and then the silane cup is used. The substrate 16 can be laminated on the surface of the support substrate 12 coated with the ring agent.

＜第２の実施形態の積層体の製造方法＞
第２の実施形態の積層体１０を製造する方法は、基板１６の第１主面１６ａにシリコーン樹脂層１４を形成する方法が好ましい。
具体的には、硬化性シリコーンを含む硬化性組成物を基板１６の第１主面１６ａに塗布し、得られた塗膜に対して硬化処理を施してシリコーン樹脂層１４を得た後、シリコーン樹脂層１４の表面に支持基材１２を積層して、積層体１０を製造する方法が好ましい。 <The manufacturing method of the laminated body of 2nd Embodiment>
As a method of manufacturing the laminated body 10 of the second embodiment, a method of forming the silicone resin layer 14 on the first main surface 16a of the substrate 16 is preferable.
Specifically, a curable composition containing curable silicone is applied to the first main surface 16a of the substrate 16, and the obtained coating film is subjected to a curing treatment to obtain a silicone resin layer 14, and then the silicone resin layer 14 is used. A method of manufacturing the laminated body 10 by laminating the supporting base material 12 on the surface of the resin layer 14 is preferable.

より詳細には、第２の実施形態の積層体１０を製造する方法は、硬化性シリコーンの層を基板１６の第１主面１６ａに形成し、基板１６の第１主面１６ａにシリコーン樹脂層１４を形成する工程（樹脂層形成工程）と、シリコーン樹脂層１４の表面に支持基材１２を積層して積層体１０を得る工程（積層工程）とを少なくとも有する。
以下、上記各工程の手順について詳述する。 More specifically, in the method for manufacturing the laminate 10 of the second embodiment, a layer of curable silicone is formed on the first main surface 16a of the substrate 16, and a silicone resin layer is formed on the first main surface 16a of the substrate 16. There is at least a step of forming 14 (resin layer forming step) and a step of laminating the support base material 12 on the surface of the silicone resin layer 14 to obtain the laminate 10 (laminating step).
Hereinafter, the procedure of each of the above steps will be described in detail.

（樹脂層形成工程）
樹脂層形成工程は、硬化性シリコーンの層を基板１６の第１主面１６ａに形成し、基板１６の第１主面１６ａにシリコーン樹脂層１４を形成する工程である。本工程によって、基板１６とシリコーン樹脂層１４とをこの順で備えるシリコーン樹脂層付き基板が得られる。
シリコーン樹脂層付き基板は、ロール状に巻いた基板１６の第１主面１６ａにシリコーン樹脂層１４を形成してから再びロール状に巻き取る、いわゆるロール・ツー・ロール（Roll to Roll）方式での製造が可能であり、生産効率に優れる。
本工程において、基板１６の第１主面１６ａに硬化性シリコーンの層を形成するためには、上述した硬化性組成物を、基板１６の第１主面１６ａに塗布する。次いで、硬化性シリコーンの層に対して硬化処理を施すことにより硬化層を形成することが好ましい。
基板１６の第１主面１６ａに硬化性組成物を塗布する方法は特に制限されず、公知の方法が挙げられる。例えば、スプレーコート法、ダイコート法、スピンコート法、ディップコート法、ロールコート法、バーコート法、スクリーン印刷法、グラビアコート法が挙げられる。
次いで、基板１６の第１主面１６ａにおける硬化性シリコーンを硬化させて、硬化層（シリコーン樹脂層１４）を形成する。
硬化の方法は特に制限されず、使用される硬化性シリコーンの種類によって適宜最適な処理が実施される。例えば、縮合反応型シリコーンおよび付加反応型シリコーンを用いる場合は、硬化処理としては熱硬化処理が好ましい。
熱硬化処理の条件は、基板１６の耐熱性の範囲内で実施され、例えば、熱硬化させる温度条件は、５０〜４００℃が好ましく、１００〜３００℃がより好ましい。加熱時間は、通常、１０〜３００分が好ましく、２０〜１２０分がより好ましい。
形成されるシリコーン樹脂層１４の態様は、上述した通りである。 (Resin layer forming process)
The resin layer forming step is a step of forming a layer of curable silicone on the first main surface 16a of the substrate 16 and forming the silicone resin layer 14 on the first main surface 16a of the substrate 16. Through this step, a substrate with a silicone resin layer, which includes the substrate 16 and the silicone resin layer 14 in this order, is obtained.
The substrate with the silicone resin layer is formed by forming the silicone resin layer 14 on the first main surface 16a of the substrate 16 wound in a roll and then winding the roll again in a so-called roll-to-roll system. Can be manufactured, and it has excellent production efficiency.
In this step, in order to form a layer of curable silicone on the first major surface 16a of the substrate 16, the curable composition described above is applied to the first major surface 16a of the substrate 16. Next, it is preferable to form a cured layer by subjecting the layer of curable silicone to a curing treatment.
The method of applying the curable composition to the first main surface 16a of the substrate 16 is not particularly limited, and a known method can be used. Examples include spray coating method, die coating method, spin coating method, dip coating method, roll coating method, bar coating method, screen printing method, and gravure coating method.
Next, the curable silicone on the first main surface 16a of the substrate 16 is cured to form a cured layer (silicone resin layer 14).
The curing method is not particularly limited, and an optimal treatment is appropriately performed depending on the type of curable silicone used. For example, when a condensation reaction type silicone and an addition reaction type silicone are used, the heat treatment is preferable as the curing treatment.
The condition of the heat curing treatment is carried out within the range of heat resistance of the substrate 16, and for example, the temperature condition of heat curing is preferably 50 to 400 ° C, more preferably 100 to 300 ° C. Usually, the heating time is preferably 10 to 300 minutes, more preferably 20 to 120 minutes.
The form of the silicone resin layer 14 formed is as described above.

（積層工程）
積層工程は、シリコーン樹脂層１４の表面に支持基材１２を積層することにより積層体１０を得る工程である。積層工程は、シリコーン樹脂層付き基板と、支持基材１２とを用いて積層体１０を形成する工程である。
支持基材１２をシリコーン樹脂層１４の表面上に積層する方法は特に制限されず、公知の方法が挙げられる。
例えば、常圧環境下でシリコーン樹脂層１４の表面上に支持基材１２を重ねる方法が挙げられる。必要に応じて、シリコーン樹脂層１４の表面上に支持基材１２を重ねた後、ロールやプレスを用いてシリコーン樹脂層１４に支持基材１２を圧着させてもよい。ロールまたはプレスによる圧着により、シリコーン樹脂層１４と支持基材１２との間に混入している気泡が比較的容易に除去されるので好ましい。
真空ラミネート法や真空プレス法により圧着すると、気泡の混入が抑制され、かつ、量良好な密着が実現でき、好ましい。真空下で圧着することにより、微小な気泡が残存した場合でも、加熱処理により気泡が成長しにくいという利点もある。
支持基材１２を積層する際には、シリコーン樹脂層１４に接触する支持基材１２の表面を十分に洗浄し、クリーン度の高い環境で積層することが好ましい。 (Lamination process)
The laminating step is a step of obtaining the laminated body 10 by laminating the support base material 12 on the surface of the silicone resin layer 14. The laminating step is a step of forming the laminated body 10 using the substrate with the silicone resin layer and the supporting base material 12.
The method for laminating the support base 12 on the surface of the silicone resin layer 14 is not particularly limited, and a known method can be used.
For example, a method of stacking the support base material 12 on the surface of the silicone resin layer 14 under a normal pressure environment can be mentioned. If necessary, the supporting base material 12 may be superposed on the surface of the silicone resin layer 14, and then the supporting base material 12 may be pressure-bonded to the silicone resin layer 14 using a roll or a press. Bubbles mixed between the silicone resin layer 14 and the supporting substrate 12 are relatively easily removed by pressure bonding by a roll or a press, which is preferable.
When pressure bonding is performed by a vacuum laminating method or a vacuum pressing method, inclusion of bubbles is suppressed and a good amount of adhesion can be realized, which is preferable. The pressure bonding under vacuum also has an advantage that even if minute bubbles remain, the bubbles are less likely to grow due to the heat treatment.
When laminating the supporting base material 12, it is preferable that the surface of the supporting base material 12 that comes into contact with the silicone resin layer 14 is thoroughly washed and the supporting base material 12 is laminated in a highly clean environment.

（切断）
第２の実施形態の積層体１０を製造する際には、例えば、シリコーン樹脂層１４が形成された基板１６と、支持基材１２とを積層させてから、支持基材１２上の基板１６およびシリコーン樹脂層１４の端部を斜めに切断（刃を傾けて切断）することにより、基板１６の傾斜面１６ｄおよびシリコーン樹脂層１４の傾斜面１４ｄを形成する。この場合、支持基材１２に固定された状態で基板１６およびシリコーン樹脂層１４を切断するため、良好な寸法精度を得やすい。
また、あらかじめ、シリコーン樹脂層１４が形成された基板１６について、基板１６の傾斜面１６ｄおよびシリコーン樹脂層１４の傾斜面１４ｄを形成しておき、これを、支持基材１２に積層させてもよい。この場合、切断した基板１６およびシリコーン樹脂層１４の端材（捨て材）を処理する工程を途中に設ける必要がないため、時間的な制約を受けにくい。 (Cut)
When manufacturing the laminated body 10 of the second embodiment, for example, the substrate 16 on which the silicone resin layer 14 is formed and the supporting base material 12 are laminated, and then the substrate 16 on the supporting base material 12 and The slanted surface 16d of the substrate 16 and the slanted surface 14d of the silicone resin layer 14 are formed by obliquely cutting the end portion of the silicone resin layer 14 (cutting by tilting the blade). In this case, since the substrate 16 and the silicone resin layer 14 are cut while being fixed to the support base 12, it is easy to obtain good dimensional accuracy.
Further, with respect to the substrate 16 on which the silicone resin layer 14 is formed, the inclined surface 16 d of the substrate 16 and the inclined surface 14 d of the silicone resin layer 14 may be formed in advance, and this may be laminated on the support base 12. .. In this case, since it is not necessary to provide a step of treating the cut substrate 16 and the end material (discarded material) of the silicone resin layer 14 in the middle, it is hard to be restricted in time.

＜積層体の用途＞
積層体１０は、種々の用途に使用でき、例えば、後述する表示装置用パネル、ＰＶ、薄膜２次電池、表面に回路が形成された半導体ウエハ、受信センサーパネル等の電子部品を製造する用途が挙げられる。これらの用途では、積層体が大気雰囲気下にて、高温条件（例えば、４５０℃以上）で曝される（例えば、２０分以上）場合もある。
表示装置用パネルは、ＬＣＤ、ＯＬＥＤ、電子ペーパー、プラズマディスプレイパネル、フィールドエミッションパネル、量子ドットＬＥＤパネル、マイクロＬＥＤディスプレイパネル、ＭＥＭＳ（Micro Electro Mechanical Systems）シャッターパネル等を含む。
受信センサーパネルは、電磁波受信センサーパネル、Ｘ線受光センサーパネル、紫外線受光センサーパネル、可視光線受光センサーパネル、赤外線受光センサーパネル等を含む。受信センサーパネルに用いる基板は、樹脂などの補強シートなどによって補強されていてもよい。 <Use of laminate>
The laminated body 10 can be used for various applications, for example, for producing electronic parts such as a display panel, a PV, a thin film secondary battery, a semiconductor wafer having a circuit formed on its surface, and a reception sensor panel, which will be described later. Can be mentioned. In these applications, the laminated body may be exposed (for example, 20 minutes or longer) under an atmosphere of high temperature (for example, 450 ° C. or higher).
The display device panel includes an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a micro LED display panel, a MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.
The receiving sensor panel includes an electromagnetic wave receiving sensor panel, an X-ray receiving sensor panel, an ultraviolet receiving sensor panel, a visible light receiving sensor panel, an infrared receiving sensor panel, and the like. The substrate used for the reception sensor panel may be reinforced by a reinforcing sheet of resin or the like.

＜電子デバイスの製造方法＞
積層体１０を用いて、基板１６および電子デバイス用部材２０を含む電子デバイスが製造される。
電子デバイスの製造方法は、例えば、積層体１０の基板１６の第２主面１６ｂの上に電子デバイス用部材２０を形成し、電子デバイス用部材付き積層体を得る部材形成工程と、電子デバイス用部材付き積層体から、基板１６および電子デバイス用部材２０を有する電子デバイスを得る分離工程と、を備える方法である。 <Electronic device manufacturing method>
An electronic device including the substrate 16 and the electronic device member 20 is manufactured using the laminate 10.
The method of manufacturing an electronic device includes, for example, a member forming step of forming the electronic device member 20 on the second main surface 16b of the substrate 16 of the laminated body 10 to obtain a laminated body with an electronic device member, and an electronic device A separation step of obtaining an electronic device having the substrate 16 and the electronic device member 20 from the member-attached laminate.

以下では、第２の実施形態の積層体１０を用いる場合を例に挙げて、より詳細に説明するが、第１の実施形態の積層体１０を用いる場合も同様である。   Hereinafter, the case of using the laminated body 10 of the second embodiment will be described in more detail as an example, but the same applies to the case of using the laminated body 10 of the first embodiment.

電子デバイスの製造方法は、積層体１０の基板１６上に電子デバイス用部材２０を形成して電子デバイス用部材付き積層体２２を得た後、得られた電子デバイス用部材付き積層体２２から、シリコーン樹脂層１４と基板１６との界面を剥離面として、電子デバイス（部材付き基板２４）とシリコーン樹脂層付き支持基材１８とに分離する方法が好ましい。
以下、電子デバイス用部材２０を形成する工程を「部材形成工程」、部材付き基板２４とシリコーン樹脂層付き支持基材１８とに分離する工程を「分離工程」という。 The method for manufacturing an electronic device is such that the electronic device member 20 is formed on the substrate 16 of the laminated body 10 to obtain the electronic device member-equipped laminate 22, and then the obtained electronic device member-equipped laminate 22 is A method of separating the electronic device (substrate 24 with member) and the supporting base material 18 with silicone resin layer by using the interface between the silicone resin layer 14 and the substrate 16 as a release surface is preferable.
Hereinafter, the step of forming the electronic device member 20 will be referred to as a "member forming step", and the step of separating the substrate with a member 24 and the supporting base material 18 with a silicone resin layer will be referred to as a "separating step".

部材形成工程の途中、または、部材形成工程の後に、基板１６上の電子デバイス用部材２０について、導通チェックしてもよい。導通チェック用の配線４０は傾斜面１６ｄに沿って形成されるので（図２参照）、導通チェックの精度は良好となる。   The continuity check may be performed on the electronic device member 20 on the substrate 16 during the member forming process or after the member forming process. Since the continuity check wiring 40 is formed along the inclined surface 16d (see FIG. 2), the accuracy of the continuity check becomes good.

以下に、各工程で使用される材料および手順について詳述する。   The materials and procedures used in each step will be described in detail below.

（部材形成工程）
部材形成工程は、積層体１０の基板１６上に電子デバイス用部材を形成する工程である。より具体的には、図６に示すように、基板１６の第２主面１６ｂ（露出表面）上に電子デバイス用部材２０を形成し、電子デバイス用部材付き積層体２２を得る。
まず、本工程で使用される電子デバイス用部材２０について詳述し、その後工程の手順について詳述する。 (Member forming process)
The member forming step is a step of forming an electronic device member on the substrate 16 of the laminated body 10. More specifically, as shown in FIG. 6, the electronic device member 20 is formed on the second main surface 16b (exposed surface) of the substrate 16 to obtain the electronic device member-equipped laminate 22.
First, the electronic device member 20 used in this step will be described in detail, and the procedure of the subsequent steps will be described in detail.

（電子デバイス用部材）
電子デバイス用部材２０は、積層体１０中の基板１６上に形成され電子デバイスの少なくとも一部を構成する部材である。より具体的には、電子デバイス用部材２０としては、表示装置用パネル、太陽電池、薄膜２次電池、または、表面に回路が形成された半導体ウエハ等の電子部品、受信センサーパネル等に用いられる部材（例えば、ＬＴＰＳなどの表示装置用部材、太陽電池用部材、薄膜２次電池用部材、電子部品用回路、受信センサー用部材）が挙げられ、例えば、米国特許出願公開第２０１８／０１７８４９２号明細書の段落［０１９２］に記載された太陽電池用部材、同段落［０１９３］に記載された薄膜２次電池用部材、同段落［０１９４］に記載された電子部品用回路が挙げられる。 (Electronic device members)
The electronic device member 20 is a member that is formed on the substrate 16 in the laminated body 10 and constitutes at least a part of the electronic device. More specifically, the electronic device member 20 is used for a display panel, a solar cell, a thin film secondary battery, or an electronic component such as a semiconductor wafer having a circuit formed on the surface thereof, a reception sensor panel, or the like. Members (for example, members for display devices such as LTPS, members for solar cells, members for thin film secondary batteries, circuits for electronic parts, members for reception sensors) are mentioned, for example, US Patent Application Publication No. 2018/0178492. The solar cell member described in paragraph [0192] of the book, the thin film secondary battery member described in paragraph [0193], and the electronic component circuit described in paragraph [0194].

（工程の手順）
上述した電子デバイス用部材付き積層体２２の製造方法は特に制限されず、電子デバイス用部材の構成部材の種類に応じて従来公知の方法にて、積層体１０の基板１６の第２主面１６ｂ上に、電子デバイス用部材２０を形成する。
電子デバイス用部材２０は、基板１６の第２主面１６ｂに最終的に形成される部材の全部（以下、「全部材」という）ではなく、全部材の一部（以下、「部分部材」という）であってもよい。シリコーン樹脂層１４から剥離された部分部材付き基板を、その後の工程で全部材付き基板（後述する電子デバイスに相当）とすることもできる。
シリコーン樹脂層１４から剥離された、全部材付き基板には、その剥離面（第１主面１６ａ）に他の電子デバイス用部材が形成されてもよい。さらに、全部材付き積層体を２枚用いて組み立て、その後、全部材付き積層体から２枚のシリコーン樹脂層付き支持基材１８を剥離して、２枚の部材付き基板２４を製造することもできる。 (Process procedure)
The method for manufacturing the laminate 22 with a member for an electronic device described above is not particularly limited, and the second main surface 16b of the substrate 16 of the laminate 10 is a conventionally known method depending on the type of the constituent member of the member for an electronic device. The electronic device member 20 is formed thereon.
The electronic device member 20 is not a part of the members finally formed on the second main surface 16b of the substrate 16 (hereinafter referred to as “all members”) but a part of all members (hereinafter referred to as “partial members”). ). The substrate with a partial member separated from the silicone resin layer 14 can be used as a substrate with all members (corresponding to an electronic device described later) in the subsequent steps.
In the substrate with all members peeled from the silicone resin layer 14, another member for electronic device may be formed on the peeled surface (first main surface 16a). Further, it is also possible to assemble two laminated bodies with all members, and then peel off the two support base materials 18 with the silicone resin layer from the laminated body with all members to manufacture two substrate with members 24. it can.

例えば、ＯＬＥＤを製造する場合を例にとると、積層体１０の基板１６のシリコーン樹脂層１４側とは反対側の表面（第２主面１６ｂ）上に有機ＥＬ構造体を形成するために、透明電極を形成する、さらに透明電極を形成した面上にホール注入層・ホール輸送層・発光層・電子輸送層等を蒸着する、裏面電極を形成する、封止板を用いて封止する、等の各種の層形成や処理が行なわれる。これらの層形成や処理として、具体的には、例えば、成膜処理、蒸着処理、封止板の接着処理等が挙げられる。   For example, taking the case of manufacturing an OLED as an example, in order to form the organic EL structure on the surface (second main surface 16b) of the laminated body 10 on the side opposite to the silicone resin layer 14 side of the substrate 16, A transparent electrode is formed, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, etc. are vapor-deposited on the surface on which the transparent electrode is formed, a back electrode is formed, and a sealing plate is used for sealing. Various layer formations and treatments are performed. Specific examples of these layer formations and treatments include film formation treatment, vapor deposition treatment, and sealing plate adhesion treatment.

（分離工程）
分離工程は、図７に示すように、上記部材形成工程で得られた電子デバイス用部材付き積層体２２から、シリコーン樹脂層１４と基板１６との界面を剥離面として、電子デバイス用部材２０が積層した基板１６（部材付き基板２４）と、シリコーン樹脂層付き支持基材１８とに分離して、電子デバイス用部材２０および基板１６を含む部材付き基板２４（電子デバイス）を得る工程である。 (Separation process)
In the separation step, as shown in FIG. 7, the electronic device member 20 is separated from the electronic device member-attached laminate 22 obtained in the member forming step, using the interface between the silicone resin layer 14 and the substrate 16 as a release surface. This is a step of separating the laminated substrate 16 (substrate with member 24) and the support base material with silicone resin layer 18 to obtain the substrate with member 24 (electronic device) including the member 20 for electronic device and the substrate 16.

剥離された基板１６上の電子デバイス用部材２０が必要な全構成部材の形成の一部である場合には、分離後、残りの構成部材を基板１６上に形成することもできる。   When the separated electronic device member 20 on the substrate 16 is a part of the formation of all the necessary constituent members, the remaining constituent members may be formed on the substrate 16 after the separation.

基板１６とシリコーン樹脂層１４とを剥離する方法は、特に制限されない。例えば、基板１６とシリコーン樹脂層１４との界面に鋭利な刃物状のものを差し込み、剥離のきっかけを与えた上で、水と圧縮空気との混合流体を吹き付けたりして剥離できる。
好ましくは、電子デバイス用部材付き積層体２２を、支持基材１２が上側、電子デバイス用部材２０側が下側となるように定盤上に設置し、電子デバイス用部材２０側を定盤上に真空吸着し、この状態でまず刃物状のものを基板１６とシリコーン樹脂層１４との界面に侵入させる。その後、支持基材１２側を複数の真空吸着パッドで吸着し、刃物状のものを差し込んだ箇所付近から順に真空吸着パッドを上昇させる。そうすると、シリコーン樹脂層付き支持基材１８を容易に剥離できる。 The method for peeling the substrate 16 and the silicone resin layer 14 is not particularly limited. For example, a sharp blade-like object may be inserted into the interface between the substrate 16 and the silicone resin layer 14 to give a trigger for peeling, and then a mixed fluid of water and compressed air may be sprayed to peel off.
Preferably, the laminated body 22 with a member for electronic devices is installed on a surface plate so that the support substrate 12 is on the upper side and the side for the electronic device member 20 is on the lower side, and the electronic device member 20 side is on the surface plate. It is vacuum-adsorbed, and in this state, a blade-like object is first introduced into the interface between the substrate 16 and the silicone resin layer 14. After that, the support base 12 side is sucked by a plurality of vacuum suction pads, and the vacuum suction pads are sequentially raised from the vicinity of the place where the blade-shaped object is inserted. Then, the support base material 18 with the silicone resin layer can be easily peeled off.

電子デバイス用部材付き積層体２２から部材付き基板２４を分離する際においては、イオナイザによる吹き付けや湿度を制御することにより、シリコーン樹脂層１４の欠片が部材付き基板２４に静電吸着することをより抑制できる。
上述した電子デバイス（部材付き基板２４）の製造方法は、例えば、米国特許出願公開第２０１８／０１７８４９２号明細書の段落［０２１０］に記載された表示装置の製造に好適であり、部材付き基板２４としては、例えば、同段落［０２１１］に記載されたものが挙げられる。 When separating the member-equipped substrate 24 from the electronic device member-equipped laminate 22, it is possible to prevent electrostatic attraction of the fragments of the silicone resin layer 14 to the member-equipped substrate 24 by controlling the spraying and humidity by the ionizer. Can be suppressed.
The method for manufacturing the electronic device (substrate with member 24) described above is suitable for manufacturing the display device described in paragraph [0210] of US Patent Application Publication No. 2018/0178492, for example, and the substrate with member 24 Examples include those described in the same paragraph [0211].

以下に、実施例等により本発明を具体的に説明するが、本発明はこれらの例によって制限されるものではない。   Hereinafter, the present invention will be specifically described with reference to examples and the like, but the present invention is not limited to these examples.

以下では、支持基材として、無アルカリホウケイ酸ガラスからなるガラス板（線膨張係数３８×１０-７／℃、ＡＧＣ株式会社製 商品名「ＡＮ１００」）を使用した。積層前のガラス板の表面には、顕微赤外分光分析により、ヒドロキシ基（ＯＨ基）が存在することが確認された。
また、以下では、基板（ポリイミド樹脂基板）として、ポリイミドフィルム（東洋紡株式会社製商品名「ゼノマックス」）を使用した。
以下、例１〜例２は実施例であり、例３は比較例である。 In the following, a glass plate made of non-alkali borosilicate glass (coefficient of linear expansion 38 × 10 −7 / ° C., product name “AN100” manufactured by AGC Corporation) was used as a supporting substrate. It was confirmed by a microscopic infrared spectroscopic analysis that hydroxy groups (OH groups) were present on the surface of the glass plate before lamination.
In the following, a polyimide film (trade name “Xenomax” manufactured by Toyobo Co., Ltd.) was used as the substrate (polyimide resin substrate).
Hereinafter, Examples 1 and 2 are examples, and Example 3 is a comparative example.

＜例１＞
（硬化性シリコーン１の調製）
オルガノハイドロジェンシロキサンとアルケニル基含有シロキサンとを混合することにより、硬化性シリコーン１を得た。硬化性シリコーン１の組成は、Ｍ単位、Ｄ単位、Ｔ単位のモル比が９：５９：３２、有機基のメチル基とフェニル基とのモル比が４４：５６、全アルケニル基と全ケイ素原子に結合した水素原子とのモル比（水素原子／アルケニル基）が０．７、平均ＯＸ基数が０．１であった。平均ＯＸ基数は、Ｓｉ原子１個に平均で何個のＯＸ基（Ｘは水素原子または炭化水素基）が結合しているかを表した数値である。
なお、Ｍ単位は、（Ｒ）3ＳｉＯ1/2で表される１官能オルガノシロキシ単位を意味する。Ｄ単位は、（Ｒ）2ＳｉＯ2/2（Ｒは、水素原子または有機基を表す）で表される２官能オルガノシロキシ単位を意味する。Ｔ単位は、ＲＳｉＯ3/2（Ｒは、水素原子または有機基を表す）で表される３官能オルガノシロキシ単位を意味する。Ｍ単位、Ｄ単位およびＴ単位の数（モル量）の割合は、２９Ｓｉ−ＮＭＲによるピーク面積比の値から計算した。 <Example 1>
(Preparation of curable silicone 1)
A curable silicone 1 was obtained by mixing the organohydrogensiloxane and the alkenyl group-containing siloxane. The composition of the curable silicone 1 has a molar ratio of M units, D units and T units of 9:59:32, a molar ratio of organic methyl groups to phenyl groups of 44:56, all alkenyl groups and all silicon atoms. The molar ratio (hydrogen atom / alkenyl group) to the hydrogen atom bonded to was 0.7, and the average number of OX groups was 0.1. The average number of OX groups is a numerical value showing how many OX groups (X is a hydrogen atom or a hydrocarbon group) are bonded to one Si atom on average.
The M unit means a monofunctional organosiloxy unit represented by (R) 3 SiO 1/2 . The D unit means a bifunctional organosiloxy unit represented by (R) 2 SiO 2/2 (R represents a hydrogen atom or an organic group). The T unit means a trifunctional organosiloxy unit represented by RSiO 3/2 (R represents a hydrogen atom or an organic group). The ratio of the numbers (molar amounts) of M units, D units and T units was calculated from the value of the peak area ratio by 29 Si-NMR.

（硬化性組成物１の調製）
硬化性シリコーン１に、Platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane（CAS No. 68478-92-2）を白金元素の含有量が６０ｐｐｍとなるように加えて、混合物Ａを得た。混合物Ａ（２００ｇ）と、２−エチルヘキサン酸ビスマス（「プキャット２５」、日本化学産業株式会社製、金属含有率２５％）（０．０８ｇ）と、溶媒としてジエチレングリコールジエチルエーテル（「ハイソルブＥＤＥ」、東邦化学工業株式会社製）（８４．７ｇ）とを混合し、得られた混合液を、孔径０．４５μｍのフィルタを用いてろ過することにより、硬化性組成物１を得た。 (Preparation of Curable Composition 1)
Platinum (0) -1,3-divinyl-1,1,3,3-tetramethyldisiloxane (CAS No. 68478-92-2) was added to curable silicone 1 so that the platinum element content would be 60 ppm. , Mixture A was obtained. Mixture A (200 g), bismuth 2-ethylhexanoate ("Pucat 25", manufactured by Nippon Kagaku Sangyo Co., Ltd., metal content 25%) (0.08 g), and diethylene glycol diethyl ether ("High Solve EDE", as a solvent). (Toho Chemical Industry Co., Ltd.) (84.7 g) was mixed, and the resulting mixed liquid was filtered using a filter having a pore size of 0.45 μm to obtain a curable composition 1.

（積層体の作製）
調製した硬化性組成物１を、ポリイミド樹脂基板としての厚さ０．０３８ｍｍのポリイミドフィルム（東洋紡株式会社製商品名「ゼノマックス」）に塗布し、ホットプレートを用いて１４０℃で１０分間加熱することにより、シリコーン樹脂層を形成した。シリコーン樹脂層の厚さは、１０μｍであった。
続いて、水系ガラス洗浄剤（株式会社パーカーコーポレーション製「ＰＫ―ＬＧＣ２１３」）で洗浄後、純水で洗浄した２００×２００ｍｍ、厚さ０．５ｍｍのガラス板「ＡＮ１００」（支持基材）をシリコーン樹脂層上に置き、貼合装置を用いて貼り合わせ、積層体を作製した。
なお、顕微赤外分光分析により硬化後のシリコーン樹脂層にヒドロキシ基（ＯＨ基）が存在することを確認した。 (Preparation of laminated body)
The prepared curable composition 1 is applied to a 0.038 mm-thick polyimide film (trade name “Xenomax” manufactured by Toyobo Co., Ltd.) as a polyimide resin substrate and heated at 140 ° C. for 10 minutes using a hot plate. As a result, a silicone resin layer was formed. The thickness of the silicone resin layer was 10 μm.
Subsequently, a glass plate “AN100” (supporting substrate) having a size of 200 × 200 mm and a thickness of 0.5 mm, which was washed with a water-based glass detergent (“PK-LGC213” manufactured by Parker Corporation) and then with pure water, was used as a silicone. The laminate was placed on the resin layer and laminated using a laminating device.
The presence of hydroxy groups (OH groups) in the cured silicone resin layer was confirmed by microscopic infrared spectroscopy.

（傾斜面の形成）
作製した積層体において、支持基材（ガラス板）上のポリイミド樹脂基板およびシリコーン樹脂層の端部を、刃物を傾けて斜めに切断することにより、傾斜面を形成した。ポリイミド樹脂基板の傾斜面と、シリコーン樹脂層の傾斜面とを、互いに連続した連続面とした。ポリイミド樹脂基板における傾斜面と第１主面とのなす角度θ１、および、シリコーン樹脂層における傾斜面と第１主面とのなす角度θ２を、ともに１０°とした。 (Formation of inclined surface)
In the manufactured laminate, the inclined surface was formed by cutting the edges of the polyimide resin substrate and the silicone resin layer on the supporting base material (glass plate) at an angle with a knife. The inclined surface of the polyimide resin substrate and the inclined surface of the silicone resin layer are continuous surfaces that are continuous with each other. The angle θ1 formed by the inclined surface of the polyimide resin substrate and the first main surface and the angle θ2 formed by the inclined surface of the silicone resin layer and the first main surface were both 10 °.

＜例２＞
ポリイミド樹脂基板における傾斜面と第１主面とのなす角度θ１、および、シリコーン樹脂層における傾斜面と第１主面とのなす角度θ２をともに６０°とした。これ以外は、例１と同様にして、積層体を作製した。 <Example 2>
The angle θ1 formed by the inclined surface of the polyimide resin substrate and the first main surface and the angle θ2 formed by the inclined surface of the silicone resin layer and the first main surface were both 60 °. A laminate was produced in the same manner as in Example 1 except for this.

＜例３＞
ポリイミド樹脂基板における傾斜面と第１主面とのなす角度θ１、および、シリコーン樹脂層における傾斜面と第１主面とのなす角度θ２をともに９０°とした。これ以外は、例１と同様にして、積層体を作製した。 <Example 3>
The angle θ1 formed by the inclined surface of the polyimide resin substrate and the first main surface and the angle θ2 formed by the inclined surface of the silicone resin layer and the first main surface were both 90 °. A laminate was produced in the same manner as in Example 1 except for this.

＜評価＞
作製した積層体を用いて、以下の評価を行なった。評価結果を下記表１に示す。 <Evaluation>
The following evaluation was performed using the produced laminated body. The evaluation results are shown in Table 1 below.

（導通チェック）
作製した積層体において、ポリイミド樹脂基板の第２主面上に形成される電子デバイス用部材の導通チェックを模擬した試験を行なった。
具体的には、ポリイミド樹脂基板の第２主面、ポリイミド樹脂基板の傾斜面（例３では傾斜面ではない垂直面である端面）、および、支持基材（ガラス板）の表面に連続して沿う線状の配線（金属種：Ａｌ／Ｎｄ合金、線幅：１００μｍ、厚さ：５０ｎｍ）を、積層体ごとに１００本ずつ形成した。
各配線について、市販のテスタを用いて導通チェックを行なった。全ての配線で導通が確認された場合には「Ａ」を、配線が１本でも導通しなかった場合には「Ｂ」を、下記表１に記載した。
「Ａ」であれば、実際に、ポリイミド樹脂基板の第２主面上に電子デバイス用部材を形成し、この電子デバイス用部材から延びる配線をスパッタ等により形成して導通チェックを行なう場合にも、精度良く行なうことができると評価できる。 (Continuity check)
In the manufactured laminate, a test simulating the conduction check of the electronic device member formed on the second main surface of the polyimide resin substrate was performed.
Specifically, the second main surface of the polyimide resin substrate, the inclined surface of the polyimide resin substrate (the end surface that is a vertical surface that is not the inclined surface in Example 3), and the surface of the supporting base material (glass plate) are continuously formed. 100 linear wires (metal species: Al / Nd alloy, line width: 100 μm, thickness: 50 nm) were formed along each laminate.
The continuity of each wiring was checked using a commercially available tester. The following Table 1 shows “A” when conduction was confirmed in all the wirings and “B” when even one wiring was not conducted.
If "A", the electronic device member is actually formed on the second main surface of the polyimide resin substrate, and the wiring extending from the electronic device member is formed by sputtering or the like to perform the continuity check. It can be evaluated that it can be performed with high accuracy.

（剥離性）
作製した積層体において、ポリイミド樹脂基板と支持基材（ガラス板）との間に、厚さ０．１ｍｍのステンレス製の刃物を差し込む作業を１０回行なった。なお、刃物を差し込む位置は、各回で異ならせた。
全ての作業回で刃物がポリイミド樹脂基板と支持基材との間に入り込んだ場合には「Ａ」を、１回でも刃物がポリイミド樹脂基板と支持基材との間に入り込まなかった場合には「Ｂ」を下記表１に記載した。
「Ａ」であれば、支持基材からポリイミド樹脂基板を分離（剥離）する際に、支持基材とポリイミド樹脂基板との間に刃物を差し込みやすく、剥離性に優れると評価できる。 (Peelability)
In the produced laminate, the work of inserting a stainless steel blade having a thickness of 0.1 mm between the polyimide resin substrate and the supporting base material (glass plate) was performed 10 times. The position for inserting the blade was different each time.
"A" if the blade entered between the polyimide resin substrate and the supporting base material at all work times, and "A" if the blade did not enter between the polyimide resin substrate and the supporting base material even once. “B” is shown in Table 1 below.
If it is "A", it can be evaluated that the blade is easy to insert between the supporting base material and the polyimide resin substrate when the polyimide resin substrate is separated (peeling) from the supporting base material, and the releasability is excellent.

＜評価結果のまとめ＞
上記表１に示すように、例１〜例２では、導通チェックの精度は良好であったが、例３では、導通チェックの精度は不十分であった。 <Summary of evaluation results>
As shown in Table 1 above, in Examples 1 and 2, the accuracy of the continuity check was good, but in Example 3, the accuracy of the continuity check was insufficient.

例１〜例２を対比すると、ポリイミド樹脂基板における傾斜面と第１主面とのなす角度θ１、および、シリコーン樹脂層における傾斜面と第１主面とのなす角度θ２が６０°である例２は、同角度が１０°である例１よりも、剥離性が良好であった。   Comparing Examples 1 and 2, an example in which the angle θ1 formed by the inclined surface of the polyimide resin substrate and the first main surface and the angle θ2 formed by the inclined surface of the silicone resin layer and the first main surface are 60 ° In No. 2, the peelability was better than in Example 1 in which the same angle was 10 °.

１０ 積層体
１２ 支持基材
１４ シリコーン樹脂層
１４ａ シリコーン樹脂層の第１主面
１４ｂ シリコーン樹脂層の第２主面
１４ｄ シリコーン樹脂層の傾斜面
１６ 基板（ポリイミド樹脂基板）
１６ａ 基板の第１主面
１６ｂ 基板の第２主面
１６ｃ 基板の端面
１６ｄ 基板の傾斜面
１８ シリコーン樹脂層付き支持基材
２０ 電子デバイス用部材
２２ 電子デバイス用部材付き積層体
２４ 部材付き基板（電子デバイス）
４０ 配線 10 Laminated body 12 Supporting substrate 14 Silicone resin layer 14a First main surface of silicone resin layer 14b Second main surface of silicone resin layer 14d Sloped surface of silicone resin layer 16 Substrate (polyimide resin substrate)
16a First main surface of substrate 16b Second main surface of substrate 16c End surface of substrate 16d Sloped surface of substrate 18 Silicone resin layer-supporting base material 20 Electronic device member 22 Electronic device member laminated body 24 Member-equipped substrate (electronic device)
40 wiring

Claims (6)

ガラス製の支持基材と、前記支持基材の上に配置されるポリイミド樹脂基板と、を備え、
前記ポリイミド樹脂基板は、前記支持基材側の第１主面と、前記第１主面とは反対側の第２主面と、前記第１主面と前記第２主面とに接続する端面とを有し、
前記端面の少なくとも一部が、前記第２主面から前記第１主面に向かうに従い突出する傾斜面である、積層体。 A supporting base made of glass, and a polyimide resin substrate arranged on the supporting base,
The polyimide resin substrate has a first main surface on the support base side, a second main surface opposite to the first main surface, and an end surface connecting to the first main surface and the second main surface. Has and
The laminated body, wherein at least a part of the end surface is an inclined surface protruding from the second main surface toward the first main surface. 前記傾斜面と、前記第１主面とのなす角度が、１０°以上である、請求項１に記載の積層体。   The laminate according to claim 1, wherein an angle formed by the inclined surface and the first main surface is 10 ° or more. 前記支持基材の厚さが、０．３ｍｍ以上である、請求項１または２に記載の積層体。   The layered product according to claim 1 or 2 whose thickness of said supporting substrate is 0.3 mm or more. 前記支持基材と前記ポリイミド樹脂基板との間に、さらに、シリコーン樹脂層を備える、請求項１〜３のいずれか１項に記載の積層体。   The laminate according to any one of claims 1 to 3, further comprising a silicone resin layer between the supporting base material and the polyimide resin substrate. 請求項１〜４のいずれか１項に記載の積層体の前記ポリイミド樹脂基板の前記第２主面の上に電子デバイス用部材を形成する工程と、
前記電子デバイス用部材から外部に延びる配線をスパッタまたは蒸着により形成する工程と、
前記配線をテスタに接続し、前記電子デバイス用部材の導通チェックを行なう工程と、
を備え、
前記配線は、前記電子デバイス用部材から延びて、前記ポリイミド樹脂基板の前記第２主面、前記ポリイミド樹脂基板の前記傾斜面、および、前記支持基材の表面に沿って形成される、導通チェック方法。 Forming a member for an electronic device on the second main surface of the polyimide resin substrate of the laminate according to any one of claims 1 to 4;
A step of forming wiring extending from the electronic device member to the outside by sputtering or vapor deposition;
Connecting the wiring to a tester and conducting a continuity check of the electronic device member,
Equipped with
The wiring extends from the electronic device member and is formed along the second main surface of the polyimide resin substrate, the inclined surface of the polyimide resin substrate, and the surface of the supporting base material. Method. 請求項１〜４のいずれか１項に記載の積層体の前記ポリイミド樹脂基板の前記第２主面の上に電子デバイス用部材を形成し、電子デバイス用部材付き積層体を得る部材形成工程と、
前記電子デバイス用部材付き積層体から、前記ポリイミド樹脂基板および前記電子デバイス用部材を有する電子デバイスを得る分離工程と、を備える電子デバイスの製造方法。 A member forming step of forming an electronic device member on the second main surface of the polyimide resin substrate of the laminated body according to any one of claims 1 to 4 to obtain a laminated body with an electronic device member, ,
And a separation step of obtaining an electronic device having the polyimide resin substrate and the electronic device member from the laminated body with the electronic device member.
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