TWI812672B - Light emitting device - Google Patents

Abstract

A light emitting device includes a light emitting element including a first surface; a light guide member covering at least a part of a lateral surface of the light emitting element; a first wavelength conversion member covering the first surface and including a first wavelength conversion particles; and a reflective member being in contact with the light emitting element. The first wavelength conversion member has a thickness of 60 μm or more and 120 μm or less. The first wavelength conversion particles have an average particle size of 4 μm or longer and 12 μm or smaller; the first wavelength conversion particles have a central particle size of 4 μm or longer and 12 μm or smaller. A weight ratio of the first wavelength conversion particles is 60% by weight or more and 75% by weight or less with respect to the total weight of the first wavelength conversion member.

Description

Lighting device

The present invention relates to a light emitting device.

A light-emitting device is known which has: a light-emitting element; an optical layer arranged on the light-emitting element to transmit at least part of the light emitted by the light-emitting element; and a plate-shaped optical member mounted on the optical layer to allow the light to emit light. At least part of the light emitted by the element is transmitted (for example, see Patent Document 1).

[Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2012-134355

The industry requires a light-emitting device that can obtain uniform chromaticity light no matter where it is used as a backlight or lighting. Therefore, an object of the embodiments of the present invention is to provide a device capable of A light-emitting device that suppresses uneven light distribution and chromaticity.

A light-emitting device according to one aspect of the present invention includes: a light-emitting element having a first surface and a second surface located on the opposite side of the first surface; a light guide member covering the side surface of the light-emitting element; and a first wavelength conversion member. , which covers the above-mentioned first surface and has a first base material and first wavelength conversion particles; and a reflective member, which covers the side surfaces of the above-mentioned light-emitting element, the side surfaces of the above-mentioned light guide member and the side surfaces of the first wavelength conversion member, and is connected with The above-mentioned light-emitting elements are in contact with each other; the thickness of the above-mentioned first wavelength conversion member is 60 μm or more and 120 μm or less, the average particle diameter of the above-mentioned first wavelength conversion particles is 4 μm or more and 12 μm or less, and the central particle diameter of the above-mentioned first wavelength conversion particles is 4 μm. or more and 12 μm or less, and the first wavelength conversion particles are 60% by weight or more and 75% by weight or less based on the total weight of the first wavelength conversion member.

According to the light-emitting device according to the embodiment of the present invention, it is possible to provide a light-emitting device capable of suppressing uneven light distribution and chromaticity.

10:Substrate

11:Substrate

12: 1st wiring

12A: Main wiring section

12B:Plating

13: 2nd wiring

14: 3rd wiring

15:Through hole

16: recess

18:Insulating film

20:Light-emitting components

21: Positive and negative electrodes

22: Positive and negative electrodes

23:Semiconductor laminated body

24:Component substrate

30: Translucent member

31: First wavelength conversion member

32: Second wavelength conversion member

33: Covered component

34:Lamination

40: Reflective component

50:Light guide component

60: Conductive bonding member

111:front

112: Back

113: Bottom surface

114: Upper surface

120A: Nickel plating containing phosphorus

120B: gold plated layer

120C: Nickel plating containing phosphorus

120D: Palladium coating

120E: 1st gold plating layer

120F: 2nd gold plating layer

121:convex part

151: 4th wiring

152: Filling component

161: Parallel Department

162: Inclined part

201: Side 1

202:Side

203: Side 2

311: The first wavelength conversion particle

312: 1st base material

321: The second wavelength conversion particle

322: 2nd base material

403: The side surface in the length direction of the reflective member located on the bottom side

404: Longitudinal side of the reflective member located on the upper surface side

1000:Lighting device

1000A:Light-emitting device

1000B:Light-emitting device

1000C:Light-emitting device

D1: Depth of the center of the recess

D2: Thickness of substrate in Z direction

D3: Length of narrow width part in Y direction

D4: Length of the wide part in the Y direction

W1: Thickness of the base material on the surface side above the recess

W2: Thickness of the base material located on the bottom side of the recess

W3: Depth of the recess on the bottom side

W4: Depth of the recess on the upper surface side

X: direction

Y: direction

Z: direction

θ:tilt angle

FIG. 1A is a schematic perspective view of the light-emitting device according to the first embodiment.

1B is a schematic perspective view of the light-emitting device according to Embodiment 1.

1C is a schematic front view of the light-emitting device according to Embodiment 1.

FIG. 2A is a schematic cross-sectional view along line 2A-2A in FIG. 1C.

FIG. 2B is a schematic cross-sectional view along line 2B-2B in FIG. 1C.

FIG. 2C is a schematic cross-sectional view of a variation of the light-emitting device according to Embodiment 1.

FIG. 2D is a schematic cross-sectional view of a variation of the light-emitting device according to Embodiment 1.

3A is a schematic rear view of the light-emitting device according to the first embodiment.

3B is a schematic bottom view of the light-emitting device according to Embodiment 1.

3C is a schematic side view of the light-emitting device according to Embodiment 1.

FIG. 4 is a schematic side view of the substrate according to the first embodiment.

5A is a schematic cross-sectional view of the light-emitting device according to Embodiment 1 and an enlarged view of the dotted line portion.

5B is a schematic cross-sectional view of a modified example of the light-emitting device according to Embodiment 1 and an enlarged view showing the dotted line portion enlarged.

Hereinafter, embodiments of the invention will be described with appropriate reference to the drawings. However, the light-emitting device described below is used to embody the technical idea of the present invention. Unless otherwise specified, the present invention is not limited to the following content. In addition, the contents described in one embodiment can also be applied to modified examples. Furthermore, the sizes and positional relationships of members shown in the drawings may be exaggerated in order to clarify the description.

<Embodiment 1>

The light-emitting device 1000 according to the embodiment of the present invention will be described based on FIGS. 1A to 5B . The light-emitting device 1000 includes the light-emitting element 20 , the light guide member 50 , the first wavelength conversion member 31 and the reflective member 40 . The light-emitting element 20 has a first surface 201 and a second surface 203 located on the opposite side of the first surface 201 . The light guide member 50 covers the side surface 202 of the light emitting element. The first wavelength conversion member 31 covers the light emitting element The first side is 201. Furthermore, the first wavelength conversion member 31 includes a first base material 312 and first wavelength conversion particles 311 . The thickness of the first wavelength conversion member 31 is 60 μm or more and 120 μm or less. The average particle diameter of the first wavelength conversion particles 311 is 4 μm or more and 12 μm or less. The central particle diameter of the first wavelength conversion particles 311 is 4 μm or more and 12 μm or less. The first wavelength conversion particles 311 are 60% by weight or more and 75% by weight or less relative to the total weight of the first wavelength conversion member 31 . The reflective member 40 covers the side surfaces of the light emitting element, the side surfaces of the light guide member, and the side surfaces of the first wavelength conversion member. Furthermore, the reflective member 40 is in contact with the light emitting element. The light-emitting device only needs to have at least one light-emitting element. That is, the light-emitting device may include only one light-emitting element or a plurality of light-emitting elements.

The average particle diameter of the first wavelength conversion particles 311 included in the first wavelength conversion member 31 is 4 μm or more and 12 μm or less. When the average particle diameter of the first wavelength conversion particles 311 is 12 μm or less, when the concentration of the first wavelength conversion particles 311 contained in the first wavelength conversion member 31 is the same, the first base material 312 and the first wavelength conversion particle 311 can be The interface for converting particles 311 has been added. By increasing the interface between the first base material and the first wavelength conversion particles, the light from the light emitting element is easily diffused using the interface between the first base material and the first wavelength conversion particles. Thereby, the light from the light-emitting element is diffused in the first wavelength conversion member, so unevenness in light distribution and chromaticity of the light-emitting device can be suppressed. Since the average particle diameter of the first wavelength conversion particles is 4 μm or more, light from the light-emitting element is easily extracted, and therefore, the light extraction efficiency of the light-emitting device is improved.

In this specification, the average particle size of the first wavelength conversion particles 311 refers to the average particle size measured by the FSSS method (Fisher Sub-Sieve Sizer). The average particle diameter measured by Fisher's method is measured using, for example, Fisher Sub-Sieve Sizer Model 95 (manufactured by Fisher Scientific).

The central particle size of the first wavelength conversion particles 311 included in the first wavelength conversion member 31 is 4 μm or more and 12 μm or less. Since the central particle diameter of the first wavelength conversion particles is 12 μm or less, when the concentration of the first wavelength conversion particles 311 contained in the first wavelength conversion member 31 is the same, the interface between the first base material and the first wavelength conversion particles Increase. By increasing the interface between the first base material and the first wavelength conversion particles, the light from the light emitting element is easily diffused using the interface between the first base material and the first wavelength conversion particles. Thereby, the light from the light-emitting element is diffused in the first wavelength conversion member, so unevenness in light distribution and chromaticity of the light-emitting device can be suppressed. Since the central particle size of the first wavelength conversion particles is 4 μm or more, light from the light-emitting element is easily extracted, and therefore the light extraction efficiency of the light-emitting device is improved.

In this specification, the central particle diameter of the first wavelength conversion particle 311 is the volume average particle diameter (median particle diameter), which is the particle diameter at which the cumulative volume frequency from the small diameter side reaches 50% (D50: median particle diameter). diameter). The central particle size can be measured using a laser diffraction particle size distribution measuring device (MASTER SIZER 2000 manufactured by MALVERN).

The particle diameter (D10) of the first wavelength conversion particles at which the cumulative volume frequency from the small diameter side reaches 10% is preferably 6 μm or more and 10 μm or less. The particle diameter (D90) of the first wavelength conversion particles at which the cumulative volume frequency from the small diameter side reaches 90% is preferably 15 μm or more and 20 μm or less.

The standard deviation (σlog) of the volume-based particle size distribution of the first wavelength conversion particles is preferably 0.3 μm or less. Since the first wavelength conversion particles have less variation, it is easy to form the wavelength conversion member 31 with a uniform thickness.

Examples of the first wavelength conversion particles include manganese-activated fluoride-based phosphors. The manganese-activated fluoride-based fluorescent system can obtain luminescence with a relatively narrow spectral line width and is a member that is better in terms of color reproducibility.

The thickness of the first wavelength conversion member 31 is 60 μm or more and 120 μm or less. By setting the thickness of the first wavelength conversion member to 60 μm or more, the number of first wavelength conversion particles 311 that can be contained in the first wavelength conversion member 31 can be increased. By setting the thickness of the first wavelength conversion member 31 to 120 μm or less, the light-emitting device can be made thinner. Furthermore, the thickness of the first wavelength conversion member refers to the thickness of the first wavelength conversion member in the Z direction.

The first wavelength conversion particles 311 are 60% by weight or more and 75% by weight or less relative to the total weight of the first wavelength conversion member 31 . The first wavelength conversion particles account for more than 60% by weight relative to the total weight of the first wavelength conversion member, thereby increasing the content of the first wavelength conversion particles. Therefore, the interface between the first base material and the first wavelength conversion particles increases. . By increasing the interface between the first base material and the first wavelength conversion particles, the light from the light emitting element is easily diffused using the interface between the first base material and the first wavelength conversion particles. Thereby, the light from the light-emitting element is diffused in the first wavelength conversion member, so unevenness in light distribution and chromaticity of the light-emitting device can be suppressed. The first wavelength conversion particle is 75% by weight or less relative to the total weight of the first wavelength conversion member, thereby increasing the ratio of the first base material in the first wavelength conversion member. Therefore, the first wavelength conversion member can be suppressed. break. Furthermore, the first wavelength conversion member may have only the first wavelength conversion particles as the wavelength conversion particles, or may have wavelength conversion particles of a different material from the first wavelength conversion particles as the wavelength conversion particles.

The light-emitting device may have a second wavelength conversion member 32 located between the light-emitting element 20 and the first wavelength conversion member 31 like the light-emitting device 1000 shown in FIG. 2A , or may not have a second wavelength conversion member 32 located between the light-emitting element 20 and the first wavelength conversion member 31 like the light-emitting device 1000A shown in FIG. 2C . The second wavelength conversion member between the light emitting element 20 and the first wavelength conversion member 31. The second wavelength conversion member 32 includes a second base material 322 and second wavelength conversion particles 321 . The average particle diameter of the first wavelength conversion particles 311 is preferably smaller than the average particle diameter of the second wavelength conversion particles 321 . Since the average particle diameter of the second wavelength converting particles is larger than the average particle diameter of the first wavelength converting particles, the light from the light-emitting element is easily guided to the second wavelength converting member 32. Therefore, the light extraction efficiency of the light-emitting device is improved. In addition, since the average particle diameter of the first wavelength conversion particles 311 is smaller than the average particle diameter of the second wavelength conversion particles 321, the light from the light-emitting element is easily diffused in the first wavelength conversion member 31, thereby suppressing the configuration of the light-emitting device. Uneven light color. The material of the first wavelength conversion particles and the material of the second wavelength conversion particles may be the same or different. In addition, the material of the first base material 312 and the material of the second base material 322 may be the same or different. Since the material of the first base material 312 and the second base material 322 are the same, the bonding strength of the first wavelength conversion member 31 and the 22nd wavelength conversion member 32 is improved. Since the material of the first base material 312 and the second base material 322 are different, a refractive index difference occurs between the first base material 312 and the second base material 322 . Thereby, the light from the light-emitting element is easily diffused at the interface between the first base material 312 and the second base material 322. Therefore, uneven light distribution and chromaticity of the light-emitting device can be suppressed. The refractive index of the first base material 312 is preferably higher than the refractive index of the second base material 322 . By setting in this manner, total reflection of light from the light-emitting element at the interface between the first base material 312 and the second base material 322 can be suppressed. Thereby, the light extraction efficiency of the light-emitting device is improved.

The thickness of the second wavelength conversion member 32 is preferably 20 μm or more and 60 μm or less. By setting the thickness of the second wavelength conversion member 32 to 20 μm or more, the number of second wavelength conversion particles 321 that can be contained in the second wavelength conversion member 32 can be increased. Since the thickness of the second wavelength conversion member 32 is 60 μm or less, down, the light-emitting device can be made thinner. Furthermore, the thickness of the second wavelength conversion member refers to the thickness of the second wavelength conversion member in the Z direction.

The thickness of the second wavelength conversion member 32 is preferably less than half the thickness of the first wavelength conversion member 31 . With this setting, it is easier for the light from the light-emitting element to irradiate the first wavelength conversion member 31 than when the second wavelength conversion member 32 is thicker. For example, when the first wavelength conversion member 31 is 80±5 μm, the thickness of the second wavelength conversion member 32 is preferably 35±5 μm. Furthermore, the thickness of the coating member 33 that covers the first wavelength conversion member 31 described below may be the same as that of the first wavelength conversion member 31 . For example, the thickness of the first wavelength conversion member 31 may be 80±5 μm, the thickness of the second wavelength conversion member 32 may be 35±5 μm, and the thickness of the covering member 33 may be 80±5 μm. Furthermore, in this specification, the equivalent thickness means an allowable variation of approximately 5 μm.

The peak wavelength of the light from the second wavelength conversion particles 321 excited by the light-emitting element is preferably shorter than the peak wavelength of the light from the first wavelength conversion particle 311 excited by the light-emitting element. Since the peak wavelength of the light from the second wavelength conversion particles 321 excited by the light emitting element is shorter than the peak wavelength of the light from the first wavelength conversion particle 311 excited by the light emitting element, the second wavelength from the excited light emitting element can be utilized. The light of the conversion particles excites the first wavelength conversion particles. Thereby, the light from the excited first wavelength conversion particles can be increased. Since the first wavelength conversion member 31 is disposed on the second wavelength conversion member 32, the light from the second wavelength conversion particles excited by the light-emitting element can easily emit to the first wavelength conversion particles.

Preferably, the peak wave of light from the first wavelength conversion particles 311 excited by the light-emitting element The length is 610 nm or more and 750 nm or less, and the peak wavelength of the light from the second wavelength conversion particle 321 excited by the light-emitting element is 500 nm or more and 570 nm or less. By setting in this manner, a light-emitting device with high color rendering can be set. By combining a light-emitting element (blue light-emitting element) whose emission peak wavelength is in the range of 430nm to 475nm, the first wavelength conversion particle whose peak wavelength of light excited by the light-emitting element is 610nm to 750nm, and the first wavelength conversion particles from the light-emitting element. A light-emitting device that emits white light can be obtained by combining the second wavelength conversion particles with the peak wavelength of the light excited by the light-emitting element being 500 nm or more and 570 nm or less. For example, examples of the first wavelength converting particles include manganese-activated potassium fluorosilicate phosphors, and examples of the second wavelength converting particles include β-sialon-based phosphors. When a phosphor of manganese-activated potassium fluorosilicate is used as the first wavelength conversion particle, it is particularly preferable to include a second wavelength conversion member 32 located between the light-emitting element 20 and the first wavelength conversion member 31 . The first wavelength conversion particles, which are manganese-activated fluoride phosphors, are prone to brightness saturation. By positioning the second wavelength conversion member 32 between the first wavelength conversion member 31 and the light-emitting element 20, excessive light from the light-emitting element can be suppressed. Irradiate the first wavelength conversion particles. Thereby, it is possible to suppress the deterioration of the first wavelength conversion particles which are manganese-activated fluoride phosphors.

As shown in FIG. 2A , the light-emitting element 20 includes a first surface 201 and a second surface 203 opposite to the first surface 201 . The light-emitting element 20 includes at least a semiconductor multilayer body 23 , and the semiconductor multilayer body 23 is provided with positive and negative electrodes 21 and 22 . The positive and negative electrodes 21 and 22 are formed on the same side of the light-emitting element 20. It is preferred that the light-emitting element 20 is flip-chip mounted on the mounting substrate. Thereby, wires for supplying power to the positive and negative electrodes of the light-emitting element are not required, and the light-emitting device can be miniaturized. When the light-emitting element is flip-chip mounted, the positive and negative electrodes 21 and 22 of the light-emitting element are located on the second surface 203. Furthermore, in this embodiment, the light-emitting element 20 has the element substrate 24, but the element substrate 24 may be removed.

The light guide member 50 covers the side surface 202 of the light emitting element. The light guide member 50 has a higher transmittance of light from the light emitting element 20 than the reflective member 40 . Therefore, by covering the side surface 202 of the light-emitting element with the light guide member 50, the light emitted from the side surface of the light-emitting element 20 can be easily extracted to the outside of the light-emitting device through the light guide member 50. Therefore, the light extraction efficiency can be improved. In addition, the light guide member 50 may be located between the first surface 201 of the light-emitting element and the translucent member 30, or may not be located between the first surface 201 of the light-emitting element and the translucent member 30. The light guide member is a member that connects the light-emitting element and the light-transmitting member. Therefore, the light-emitting element and the light-transmitting member are joined by the light guide member being located between the first surface 201 of the light-emitting element and the light-transmitting member 30. Increased strength.

The reflective member 40 covers the side surfaces of the light emitting element, the side surfaces of the light guide member, and the side surfaces of the first wavelength conversion member. By setting in this way, it is possible to provide a light-emitting device with good "separation properties" in which the contrast between the light-emitting area and the non-light-emitting area is high. In addition, at least part of the reflective member 40 is in contact with the light-emitting element. By having at least part of the reflective member 40 in contact with the light-emitting element, the light-emitting device can be miniaturized. The reflective member 40 is preferably in contact with the second surface 203 of the light emitting element. By setting in this manner, it is possible to suppress light from the light-emitting element from being absorbed into the substrate on which the light-emitting element is mounted.

The light emitting device 1000 shown in FIG. 2A may also include a covering member 33 covering the first wavelength conversion member 31 . The covering member 33 substantially contains no wavelength conversion particles. By providing the coating member 33 that covers the first wavelength conversion member 31, even if the first wavelength conversion particles that are not resistant to moisture are used, since the coating member 33 also functions as a protective layer, deterioration of the first wavelength conversion particles can be suppressed. Examples of the moisture-intolerant wavelength converting particles include manganese-activated fluoride phosphors. The manganese-activated fluoride-based fluorescent system can obtain luminescence with a relatively narrow spectral line width and is a member that is better in terms of color reproducibility. “Substantially does not contain wavelength converting particles” means that unavoidable In order to avoid mixing the wavelength conversion particles, the content of the wavelength conversion particles is preferably 0.05% by weight or less. In addition, in this specification, the first wavelength conversion member 31 , the second wavelength conversion member 32 and/or the covering member 33 may be collectively referred to as the translucent member 30 .

The light-emitting device 1000C shown in FIG. 2D may also include a coating 34 covering the upper surface of the translucent member 30 . The coating 34 refers to an agglomerate of coated particles that are nanoparticles. Furthermore, the coating may only be coating particles, or may include coating particles and resin materials. Because the refractive index of the coating is different from the refractive index of the base material of the translucent member located on the outermost surface, the luminous chromaticity of the light-emitting device can be corrected. The base material of the light-transmitting member located on the outermost surface refers to the base material of the layer forming the surface of the light-transmitting member opposite to the light extraction surface side of the light-emitting element. For example, when the refractive index of the coating 34 is greater than the refractive index of the base material of the translucent member located on the outermost surface, the reflected light component at the interface between the coating 34 and the air is smaller than that of the translucent member located on the outermost surface. The reflected light component at the interface between the base material and the air increases. Therefore, the reflected light component returned to the translucent member can be increased, and therefore the wavelength conversion particles can be easily excited. Thereby, the luminance chromaticity of the light-emitting device can be corrected toward the longer wavelength side. Furthermore, when the refractive index of the coating 34 is smaller than the refractive index of the base material of the light-transmitting member located on the outermost surface, the reflected light component at the interface between the coating and the air is smaller than that of the base material of the light-transmitting member and the air. The reflected light component at the interface is reduced. Thereby, the reflected light component returned to the translucent member can be reduced, so that the wavelength conversion particles are less likely to be excited. Thereby, the luminance chromaticity of the light-emitting device can be corrected toward the shorter wavelength side. For example, when a phenyl-based silicone resin is used as the base material of the light-transmitting member located on the outermost surface, examples of coating particles that correct the luminous chromaticity of the light-emitting device toward the longer wavelength side include titanium oxide, oxide Titanium, alumina, etc. When a phenyl-based silicone resin is used as the base material of the light-transmitting member located on the outermost surface, examples of coating particles that correct the emission chromaticity of the light-emitting device to the short wavelength side include silicon oxide and the like. The light-emitting device has a plurality of In the case of a translucent member, it is also possible to cover the upper surface of one translucent member with a coating, but not to cover the upper surface of another translucent member with a coating. Whether or not to form a film covering the upper surface of the light-transmitting member can be appropriately selected in accordance with the correction of the luminous chromaticity of the light-emitting device. Furthermore, when the light-emitting device has a plurality of translucent members, a coating having a refractive index greater than the refractive index of the base material of the translucent member located on the outermost surface may be coated on the upper surface of one translucent member, The upper surface of another light-transmitting member is covered with a coating having a refractive index smaller than the refractive index of the base material of the light-transmitting member located on the outermost surface. The material of the film covering the translucent member can be appropriately selected in accordance with the correction of the luminance chromaticity of the light-emitting device. The coating can be formed by known methods such as pouring with a dispenser, inkjet or spraying with a sprayer.

The light-emitting device may also include a substrate 10 on which a light-emitting element is mounted. For example, the substrate 10 includes a base material 11, a first wiring 12, a second wiring 13, a third wiring 14, and a through hole 15. The base material 11 has a front surface 111 extending in the first direction as the length direction and the second direction as the short side direction; a back surface 112 located on the opposite side of the front surface; and a bottom surface 113 adjacent to the front surface 111 and connected to the front surface 111 . The front surface 111 is orthogonal; and the upper surface 114 is located on the opposite side of the bottom surface 113 . The base material 11 further has at least one recess 16 . The first wiring 12 is arranged on the front surface 111 of the base material 11 . The second wiring 13 is arranged on the back surface 112 of the base material 11 . The light-emitting element 20 is electrically connected to the first wiring 12 and is placed on the first wiring 12 . The reflective member 40 covers the side surface 202 of the light emitting element 20 and the front surface 111 of the substrate. At least one recess opens to the back 112 and the bottom 113 . The third wiring 14 covers the inner wall of the recess and is electrically connected to the second wiring. The through hole 15 is connected to the first wiring 12 and the second wiring. The through hole 15 electrically connects the first wiring 12 and the second wiring 13 . In addition, the through hole 15 penetrates from the front surface 111 of the base material 11 to the back surface 112 . Furthermore, in this specification, orthogonal means that an inclination of approximately ±3° from 90° is allowed.

The through hole 15 can be connected to the third wiring, or the through hole 15 can be separated from the third wiring. By connecting the through hole 15 to the third wiring, the heat from the light emitting element can be transferred from the first wiring 12 to the second wiring 13 and/or the third wiring 14 through the through hole 15. Therefore, the light emitting device 1000 can be Improved heat dissipation. Since the through hole 15 is separated from the third wiring, the through hole and the recess do not overlap in the rear view, so the strength of the substrate is improved. When there are a plurality of through holes 15 , one through hole may be connected to the third wiring and the other through hole may be separated from the third wiring.

When the light-emitting element 20 is flip-chip mounted on the substrate 10 , the positive and negative electrodes 21 and 22 of the light-emitting element are connected to the substrate 10 through the conductive adhesive member 60 . When the light-emitting element 20 is flip-chip mounted on the substrate 10, the first wiring 12 preferably has a convex portion 121. Since the positive and negative electrodes 21 and 22 of the light-emitting element 20 are located on the convex portion 121 of the first wiring 12, self-alignment can be used when connecting the first wiring 12 to the positive and negative electrodes 21 and 22 of the light-emitting element via the conductive adhesive member 60. The alignment effect makes it easy to align the position of the light-emitting element and the substrate.

The through hole 15 is preferably circular in rear view. With this setting, it can be easily formed using a drill or the like. In this specification, a circular shape is not only a true circle, but also includes a shape close to a true circle (for example, it can also be an elliptical shape or a shape in which the four corners of a quadrilateral are larger and chamfered in an arc shape).

The through hole 15 may also be formed by filling a conductive material in the through hole of the base material. It may also have a fourth wiring 151 covering the surface of the through hole of the base material and a fourth wiring 151 filled therein as shown in FIG. 2A The filling member 152 of the area surrounded by 151. The filling member 152 may be conductive or insulating. The filling member 152 is preferably made of a resin material. Generally, the resin material before hardening is The metal material before hardening has higher fluidity and therefore can be easily filled into the fourth wiring 151 . Therefore, by using a resin material as a filling member, the substrate can be easily manufactured. Examples of the resin material that can be easily filled include epoxy resin. When a resin material is used as a filling member, it is preferable to include an additive member to reduce the linear expansion coefficient. By setting in this manner, the difference in linear expansion coefficient between the fourth wiring and the fourth wiring becomes small, so it is possible to suppress the generation of a gap between the fourth wiring and the filling member due to the heat from the light-emitting element. Examples of the additive member include silicon oxide. In addition, when the filling member 152 is made of a metal material, heat dissipation can be improved. In addition, when the through hole 15 is formed by filling the through hole of the base material with a conductive material, it is preferable to use a metal material such as Ag or Cu with high thermal conductivity.

The light emitting device 1000 can be fixed to the mounting substrate using a joining member such as solder formed in the recess 16 . The number of recesses provided on the substrate may be one or a plurality of recesses. By having a plurality of recesses, the bonding strength between the light-emitting device 1000 and the mounting substrate can be improved. The depth of the recess may be the same depth on the upper surface side and the bottom surface side, or may be deeper on the bottom surface side than on the upper surface side. As shown in FIG. 2B , since the depth of the recess 16 in the Z direction is deeper on the bottom side than on the upper surface side, in the Z direction, the thickness W1 of the base material located on the surface side above the recess can be made thicker than The thickness W2 of the base material located on the bottom side of the recess. This can prevent the base material from decreasing in strength. Furthermore, since the depth W3 of the recess on the bottom surface side is deeper than the depth W4 of the recess on the upper surface side, the volume of the bonding member formed in the recess is increased. Therefore, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. . The light emitting device 1000 may be a top surface emitting type (top view type) installed with the back surface 112 of the base material 11 facing the mounting substrate, or a side emitting type (side view type) installed with the bottom surface 113 of the base material 11 facing the mounting substrate. Side view type), the joint strength between the joint component and the mounting substrate can be improved by increasing the volume of the joint component.

The bonding strength between the light-emitting device 1000 and the mounting substrate can be improved especially in the case of the side-emitting type. By making the depth of the recess in the Z direction deeper on the bottom side than on the upper surface side, the area of the opening of the recess on the bottom surface can be increased. By increasing the area of the opening of the recess on the bottom surface facing the mounting substrate, the area of the joint member located on the bottom surface can also be increased. Thereby, the area of the bonding member located on the surface facing the mounting substrate can be increased, and therefore the bonding strength between the light-emitting device 1000 and the mounting substrate can be improved.

The maximum depth of the recess in the Z direction is preferably 0.4 to 0.9 times the thickness of the substrate in the Z direction. By making the depth of the recess deeper than 0.4 times the thickness of the base material, the volume of the joint member formed in the recess is increased. Therefore, the joint strength between the light-emitting device and the mounting substrate can be improved. By making the depth of the recess shallower than 0.9 times the thickness of the base material, the decrease in strength of the base material can be suppressed.

As shown in FIG. 2B , the recess 16 preferably has a parallel portion 161 extending from the back surface 112 in a direction parallel to the bottom surface 113 (Z direction). By having the parallel portion 161, even if the area of the opening of the recess on the back surface is the same, the volume of the recess can be increased. By increasing the volume of the recess, the amount of joining components such as solder that can be formed in the recess can be increased, thereby improving the bonding strength between the light emitting device 1000 and the mounting substrate. Furthermore, in this manual, parallel means that an inclination of about ±3° is allowed. In addition, when viewed in cross section, the recess 16 has an inclined portion 162 that is inclined from the bottom surface 113 in the direction in which the thickness of the base material 11 becomes thicker. The inclined portion 162 may be straight or curved.

The maximum height of the recess in the Y direction is preferably 0.3 to 0.75 times the thickness of the substrate in the Y direction. The recess is formed by the depth of the recess in the Y direction being longer than 0.3 times the thickness of the base material. The volume of the internal bonding component is increased, so the bonding strength between the light-emitting device and the mounting substrate can be improved. By making the length of the recess in the Y direction shorter than 0.75 times the thickness of the base material, the decrease in the strength of the base material can be suppressed.

As shown in FIG. 3A , when there are a plurality of recesses 16 on the back surface, it is preferable to locate them in a left-right symmetrical position with respect to the center line 3C of the base material parallel to the Y direction. With this setting, when the light-emitting device is mounted on the mounting substrate via the bonding member, self-alignment effectively functions, and the light-emitting device can be accurately mounted within the mounting range.

The light-emitting device may also include an insulating film 18 covering a part of the second wiring 13 . By providing the insulating film 18, insulation on the back surface can be ensured and short circuit can be prevented. In addition, the second wiring can be prevented from peeling off from the base material.

On the bottom surface, the depth of the recess in the Z direction may be approximately constant, or the depth of the recess may be different at the center and at the ends. Preferably, as shown in FIG. 3B , on the bottom surface, the depth D1 of the center of the recess 16 is the maximum depth of the recess in the Z direction. By setting in this way, the thickness D2 of the base material in the Z direction can be increased at the end of the recess in the X direction on the bottom surface, and therefore the strength of the base material can be improved. In addition, in this specification, the center refers to an allowable variation of about 5 μm. The recess 16 can be formed by known methods such as drill or laser.

As shown in FIG. 3C , the longitudinal side 403 of the reflective member 40 located on the bottom surface 113 side is preferably inclined toward the inside of the light emitting device 1000 in the Z direction. With this setting, when the light-emitting device 1000 is mounted on the mounting substrate, the longitudinal side 403 of the reflective member 40 located on the bottom surface 113 side is in contact with the mounting substrate. The installation posture of the light-emitting device 1000 is easily stabilized. The side surface 404 in the longitudinal direction of the reflective member 40 located on the upper surface 114 side is preferably inclined toward the inside of the light emitting device 1000 in the Z direction. By setting in this manner, the contact between the side surface of the reflective member 40 and the suction nozzle (suction nozzle) is suppressed, and damage to the reflective member 40 during suction of the light emitting device 1000 can be suppressed. In this way, the longitudinal side 403 of the reflective member 40 located on the bottom surface 113 side and the longitudinal side 404 of the reflective member 40 located on the upper surface 114 side are preferably directed from the back to the light emitting device 1000 in the front direction (Z direction). Medial slope. The inclination angle θ of the reflective member 40 can be appropriately selected, but from the viewpoint of easily exerting this effect and the strength of the reflective member 40, it is preferably 0.3° or more and 3° or less, and more preferably 0.5° or more and 2° or less. , more preferably 0.7° or more and 1.5° or less. In addition, it is preferable that the right side and the left side of the light emitting device 1000 have substantially the same shape. By setting in this manner, the light emitting device 1000 can be miniaturized.

Preferably, like the substrate 10 shown in FIG. 4 , when viewed from the front, the first wiring 12 has a narrow portion with a short length in the Y direction and a wide portion with a long length in the Y direction. The Y-direction length D3 of the narrow-width portion is shorter than the Y-direction length D4 of the wide-width portion. When viewed from the front, the narrow-width portion is separated from the center of the through hole 15 in the X direction, and is located in the portion where the electrode of the light-emitting element is located in the X direction. The wide portion is located at the center of the through hole 15 when viewed from the front. Since the first wiring 12 has a narrow portion, the area where the conductive adhesive member electrically connecting the electrode of the light-emitting element and the first wiring is wetted and diffused on the first wiring can be reduced. This makes it easy to control the shape of the conductive adhesive member. Furthermore, the peripheral edge portion of the first wiring may be in a rounded shape.

As shown in FIG. 5A , the first wiring, the second wiring, and/or the third wiring may have a wiring main part 12A and a plating layer 12B formed on the wiring main part 12A. In this manual, wiring refers to the first wiring, 2nd wiring and/or 3rd wiring. As the wiring main part 12A, a well-known material such as copper can be used. By having the plating layer 12B on the wiring main part 12A, the reflectivity on the surface of the wiring can be improved or vulcanization can be suppressed. For example, the nickel plating layer 120A containing phosphorus may be provided on the wiring main part 12A. The hardness of nickel is increased by containing phosphorus. Therefore, since the nickel plating layer 120A containing phosphorus is located on the wiring main part 12A, the hardness of the wiring is increased. This can suppress the generation of burrs on the wiring when the wiring is cut during singulation of the light-emitting device or the like. The nickel plating layer containing phosphorus can be formed by electroplating or electroless plating.

Preferably, as shown in FIG. 5A , the gold plating layer 120B is located on the outermost surface of the plating layer 12B. Since the gold plating layer is located on the outermost surface of the plating layer, oxidation and corrosion on the surfaces of the first wiring 12, the second wiring 13, and/or the third wiring 14 can be suppressed, thereby achieving good solderability. Can improve reflectivity or inhibit vulcanization. The gold plating layer 120B located on the outermost surface of the plating layer 12B is preferably formed by electroplating. Compared with electroless plating, electroplating can reduce the content of catalyst poisons such as sulfur. When the addition reaction type silicone resin using a platinum-based catalyst is hardened at the position in contact with the gold plating layer, the gold plating layer formed by the electroplating method contains less sulfur, so it can suppress the occurrence of sulfur and platinum. reaction. This can prevent the addition reaction type silicone resin using a platinum-based catalyst from curing failure. When forming the gold plating layer 120B in contact with the nickel plating layer 120A containing phosphorus, the nickel plating layer 120A and the gold plating layer 120B containing phosphorus are preferably formed by electroplating. By using the same method to form the plating layer, the manufacturing cost of the light-emitting device can be suppressed. Furthermore, the so-called nickel plating layer may contain nickel, and the so-called gold plating layer may contain gold or other materials.

The thickness of the nickel plating layer containing phosphorus is preferably thicker than the thickness of the gold plating layer. Since the thickness of the nickel plating layer containing phosphorus is thicker than the thickness of the gold plating layer, it is easy to make the first wiring 12 , the second wiring 13 and/or the third wiring The hardness of line 14 is increased. The thickness of the nickel plating layer containing phosphorus is preferably not less than 5 times and not more than 500 times the thickness of the gold plating layer, more preferably not less than 10 times and not more than 100 times.

Like the light-emitting device 1000C shown in FIG. 5B , the wiring may also form a plating layer composed of a nickel plating layer 120C containing phosphorus, a palladium plating layer 120D, a first gold plating layer 120E, and a second gold plating layer 120F on the wiring main part 12A. 12B. By laminating the nickel plating layer 120C, the palladium plating layer 120D, the first gold plating layer 120E, and the second gold plating layer 120F containing phosphorus, for example, when copper is used for the main wiring portion 12A, diffusion of copper into the plating layer 12B can be suppressed. Thereby, it is possible to suppress a decrease in the adhesion of each layer of the plating layer. Alternatively, the nickel plating layer 120C containing phosphorus, the palladium plating layer 120D, and the first gold plating layer 120E may be formed on the main wiring portion 12A by electroless plating, and the second gold plating layer 120F may be formed by electroplating. Since the second gold plating layer 120F formed by the electroplating method is located on the outermost surface, it is possible to suppress curing failure of the addition reaction type silicone resin using a platinum-based catalyst.

Hereinafter, each component of the light-emitting device according to an embodiment of the present invention will be described.

(Light-emitting element 20)

The light-emitting element 20 is a semiconductor element that emits light by itself by applying a voltage, and a known semiconductor element composed of a nitride semiconductor or the like can be applied. An example of the light-emitting element 20 is an LED (Light-Emitting Diode) chip. The light-emitting element 20 includes at least a semiconductor laminated body 23 and, in many cases, an element substrate 24 . The top view shape of the light-emitting element is preferably a rectangular shape, especially a square shape or a rectangular shape that is longer in one direction, but it can also be in other shapes. For example, as long as it is a hexagonal shape, the luminous efficiency can also be improved. The side of the light-emitting element can be perpendicular to the upper surface, or can be inclined inward or outward. In addition, the light-emitting element has positive and negative electrodes. The positive and negative electrodes may be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or alloys thereof. The luminescence peak wavelength of the light-emitting element depends on the semiconductor material or its mixed crystal ratio, and the selection range can be from the ultraviolet region to the infrared region. As the semiconductor material, it is preferable to use a nitride semiconductor, which is a material capable of emitting short-wavelength light that can efficiently excite wavelength conversion particles. Nitride semiconductors are mainly represented by the general formula In _{x Aly} Ga _1-xy N (0≦x, 0≦y, x+y≦1). The luminescence peak wavelength of the light-emitting element is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and still more preferably 400 nm or more and 490 nm or less, from the viewpoint of luminous efficiency, excitation of wavelength conversion particles, and color mixing relationship with their luminescence. Above 450nm and below 475nm. In addition, InAlGaAs-based semiconductors, InAlGaP-based semiconductors, zinc sulfide, zinc selenide, silicon carbide, etc. can also be used. The element substrate of the light-emitting element is a crystal growth substrate capable of growing semiconductor crystals that mainly constitute the semiconductor laminate, but may also be a bonding substrate for bonding to a semiconductor element structure separated from the crystal growth substrate. Because the component substrate is light-transmissive, flip-chip mounting is easy, and the light extraction efficiency is easily improved. Examples of base materials for component substrates include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, zinc sulfide, zinc oxide, zinc selenide, diamond, etc. Among them, sapphire is preferred. The thickness of the element substrate can be appropriately selected, for example, 0.02 mm or more and 1 mm or less. From the viewpoint of the strength of the element substrate and/or the thickness of the light-emitting device, it is preferably 0.05 mm or more and 0.3 mm or less.

(First wavelength conversion member 31)

The first wavelength conversion member is a member provided on the light-emitting element. The first wavelength conversion member includes a first base material and first wavelength conversion particles.

(First wavelength conversion particle 311)

The first wavelength conversion particles absorb at least part of the primary light emitted by the light-emitting element and emit secondary light of a different wavelength from the primary light. The first wavelength conversion particles can be used alone or in combination of two or more types among the specific examples shown below.

As the first wavelength converting particles, known wavelength converting particles such as wavelength converting particles that emit green light, wavelength converting particles that emit yellow light, or wavelength converting particles that emit red light can be used. For example, as wavelength conversion particles that emit green light, yttrium-aluminum-garnet phosphors (for example, Y ₃ (Al, Ga) ₅ O ₁₂ :Ce), phosphorus-aluminum-garnet phosphors (e.g., For example, Lu ₃ (Al, Ga) ₅ O ₁₂ : Ce), tungsten-aluminum-garnet phosphor (for example, Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce) phosphor, silicate phosphor Phosphor (e.g. (Ba,Sr) ₂ SiO ₄ : Eu), chlorosilicate phosphor (e.g. Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu), β-sialon phosphor (e.g. Si _6-z Al _z O _z N _8-z : Eu (0<z<4.2)), SGS-based phosphor (for example, SrGa ₂ S ₄ : Eu), etc. Examples of wavelength converting particles that emit yellow light include α-sialon phosphors (for example, M _z (Si, Al) ₁₂ (O, N) ₁₆ (where 0<z≦2, M is Li, Mg, Ca , Y and lanthanoid elements other than La and Ce), etc. In addition, among the above-mentioned wavelength conversion particles that emit green light, there are also wavelength conversion particles that emit yellow light. Also, for example, yttrium-aluminum-garnet fluorescent By substituting a part of Y with Gd, the luminescence peak wavelength can be shifted to the longer wavelength side, thereby emitting yellow light. Among these, there are also wavelength conversion particles that can emit orange light. As for those that emit red light Examples of the wavelength conversion particles include nitrogen-containing calcium aluminum silicate (CASN or SCASN) phosphors (for example, (Sr,Ca)AlSiN ₃ :Eu). In addition, examples include manganese-activated fluoride phosphors (general formula (I) Phosphor represented by A ₂ [M _1-a Mn _a F ₆ ] (wherein, in the above general formula (I), A is selected from the group consisting of K, Li, Na, Rb, Cs and NH ₄ At least one element from the group, M is selected from at least one element from the group consisting of Group 4 elements and Group 14 elements, a satisfies 0<a<0.2)). As the manganese-activated fluoride series A representative example of the phosphor is a manganese-activated potassium fluorosilicate phosphor (for example, K ₂ SiF ₆ :Mn).

(1st base material 312)

The first base material 312 only needs to be translucent to the light emitted by the self-luminous element. Furthermore, "light transmittance" means that the light transmittance at the peak emission wavelength of the light-emitting element is preferably 60% or more, more preferably 70% or more, and still more preferably 80% or more. As the first base material, silicone resin, epoxy resin, phenolic resin, polycarbonate resin, acrylic resin, or modified resins thereof can be used. It can also be glass. Among them, silicone resin and modified silicone resin are preferred because of their excellent heat resistance and light resistance. Specific silicone resins include dimethyl silicone resin, phenylmethyl silicone resin, and diphenyl silicone resin. Furthermore, "modified resin" in this specification includes mixed resin.

The first base material may contain various diffusion particles in the above-mentioned resin or glass. Examples of diffusion particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, and the like. As the diffusion particles, one of these may be used alone or two or more of these may be used in combination. Silicon oxide with a small thermal expansion coefficient is particularly preferred. In addition, nanoparticles can also be used as diffusion particles to increase the scattering of light emitted by the light-emitting element and reduce the amount of wavelength conversion particles used.

(Light guide member 50)

The light guide member is a member that connects the light-emitting element and the translucent member and guides the light from the light-emitting element to the translucent member. Examples of the base material of the light guide member include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resins thereof. Among them, silicone resin and modified silicone resin are preferred because of their excellent heat resistance and light resistance. silicone tree Examples of the resin include dimethyl silicone resin, phenyl methyl silicone resin, and diphenyl silicone resin. Moreover, the base material of the light guide member may also contain diffusion particles similarly to the said 1st base material.

(reflective component)

Regarding the reflective member, from the viewpoint of light extraction efficiency in the Z direction, the light reflectivity at the peak wavelength of light emission of the light-emitting element is preferably 70% or more, more preferably 80% or more, and further more preferably 90% or more. Furthermore, the reflective member is preferably white. Therefore, it is preferable that the reflective member contains a white pigment in the base material. The reflective member passes through a liquid state before hardening. The reflective member can be formed by transfer molding, injection molding, compression molding, infusion, or the like.

(base material of reflective components)

Resin can be used as the base material of the reflective member, and examples include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resins thereof. Among them, silicone resin and modified silicone resin are preferred because of their excellent heat resistance and light resistance. Specific silicone resins include dimethyl silicone resin, phenylmethyl silicone resin, and diphenyl silicone resin.

(white pigment)

White pigments can be used alone: titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, One of zirconium oxide and silicon oxide, or two or more of them are used in combination. The shape of the white pigment can be appropriately selected and may be amorphous or broken, but from the viewpoint of fluidity, a spherical shape is preferred. In addition, the particle size of the white pigment is, for example, about 0.1 μm or more and 0.5 μm or less. In order to improve the light reflection or coating effect, the smaller the particle size, the better. of white pigments in reflective components The content can be appropriately selected, but from the viewpoint of light reflectivity and viscosity in liquid form, for example, it is preferably 10 wt% or more and 80 wt% or less, more preferably 20 wt% or more and 70 wt% or less, and still more preferably 30 wt%. Above and below 60wt%. Furthermore, "wt%" refers to the weight percentage, which refers to the ratio of the weight of the material to the total weight of the reflective component.

(Second wavelength conversion member 32)

The second wavelength conversion member may be made of the same material as the first wavelength conversion member.

(covered member 33)

The second wavelength conversion member can be made of the same material as the first base material.

(Substrate 10)

The substrate 10 is a member on which the light-emitting element is mounted. The substrate 10 is composed of a base material 11 , a first wiring 12 , a second wiring 13 , a third wiring 14 , and a through hole 15 .

(Substrate 11)

The base material 11 can be made of an insulating member such as resin, fiber-reinforced resin, ceramics, or glass. Examples of the resin or fiber-reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT, Bismaleimide Triazine), polyimide, and the like. Examples of ceramics include alumina, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, or mixtures thereof. Among these base materials, it is particularly preferable to use a base material having physical properties close to the linear expansion coefficient of the light-emitting element. The lower limit of the thickness of the base material can be appropriately selected, but from the viewpoint of the strength of the base material, it is preferably 0.05 mm or more, and more preferably 0.2 mm or more. Also, from the perspective of the thickness (depth) of the light-emitting device Specifically, the upper limit of the thickness of the base material is preferably 0.5 mm or less, more preferably 0.4 mm or less.

(1st wiring 12, 2nd wiring 13, 3rd wiring 14)

The first wiring is arranged on the front surface of the substrate and is electrically connected to the light-emitting element. The second wiring is arranged on the back surface of the substrate and is electrically connected to the first wiring through the through hole. The third wiring covers the inner wall of the recess and is electrically connected to the second wiring. The first wiring, the second wiring, and the third wiring may be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or alloys thereof. It can be a single layer of these metals or alloys, or it can be multiple layers. From the viewpoint of heat dissipation, copper or copper alloy is particularly preferred. In addition, from the viewpoint of wettability and/or light reflectivity of the conductive adhesive member, silver, platinum, aluminum, rhodium, gold or the like may be provided on the surface of the first wiring and/or the second wiring. Alloy etc. layer.

(Through hole 15)

The through hole 15 is a member provided in a hole penetrating the front and back surfaces of the base material 11 to electrically connect the first wiring and the second wiring. The through hole 15 may be composed of a fourth wiring 151 covering the surface of the through hole of the base material and a filling member 152 filled in the fourth wiring 151 . The fourth wiring 151 can use the same conductive member as the first wiring, the second wiring, and the third wiring. The filling member 152 may be a conductive member or an insulating member.

(Insulation film 18)

The insulating film 18 is a member that ensures insulation on the back surface and prevents short circuits. The insulating film can be formed of any one used in this field. Examples include thermosetting resins, thermoplastic resins, and the like.

(Conductive adhesive member 60)

The conductive bonding member refers to a member that electrically connects the electrode of the light-emitting element and the first wiring. As the conductive adhesive member, bumps of gold, silver, copper, etc., metal pastes containing metal powders of silver, gold, copper, platinum, aluminum, palladium, etc. and resin binders, tin-bismuth series, and tin-copper can be used. Any of solders such as tin-silver series, gold-tin series, low melting point metals, etc.

[Industrial availability]

The light-emitting device according to one embodiment of the present invention can be used in backlight devices of liquid crystal displays, various lighting fixtures, large displays, various display devices such as advertisements or destination guides, projector devices, and furthermore, digital video cameras, fax machines, Image reading devices in photocopiers, scanners, etc.

10‧‧‧Substrate

12‧‧‧1st wiring

13‧‧‧2nd wiring

14‧‧‧3rd wiring

15‧‧‧Through hole

16‧‧‧Recess

20‧‧‧Light-emitting components

21‧‧‧Positive and negative electrodes

22‧‧‧Positive and negative electrodes

23‧‧‧Semiconductor laminated body

24‧‧‧Component substrate

30‧‧‧Transparent components

31‧‧‧The first wavelength conversion component

32‧‧‧Second wavelength conversion component

33‧‧‧Covered components

40‧‧‧Reflective components

50‧‧‧Light guide component

111‧‧‧Front

112‧‧‧Back

121‧‧‧Protrusion

151‧‧‧4th wiring

152‧‧‧Filling components

201‧‧‧Side 1

202‧‧‧Side

203‧‧‧Side 2

311‧‧‧The first wavelength conversion particle

312‧‧‧1st base material

321‧‧‧The second wavelength conversion particle

322‧‧‧Second base material

1000‧‧‧Light-emitting devices

X‧‧‧ direction

Y‧‧‧ direction

Z‧‧‧ direction

Claims (6)

A light-emitting device provided with: a light-emitting element having a first surface, a second surface located on the opposite side of the first surface, and a first side surface located between the first surface and the second surface; a light guide member , which covers the first side of the light-emitting element; a first wavelength conversion member, which is located above the first side and contains a first base material and first wavelength conversion particles, and the first wavelength conversion particles are manganese-activated fluorine chemical phosphor; a second wavelength conversion member located between the above-mentioned light-emitting element and the above-mentioned first wavelength conversion member, including a second base material and second wavelength conversion particles, the above-mentioned second wavelength conversion particles having a wavelength greater than that of the above-mentioned first wavelength Conversion particles have a short peak wavelength; and a reflective member that is in contact with at least part of the above-mentioned light-emitting element; the above-mentioned second wavelength conversion member has a third surface facing the above-mentioned first surface and located on the opposite side of the above-mentioned third surface. The fourth side and the second side between the third side and the fourth side, the first wavelength conversion member has a fifth side facing the fourth side and located on the opposite side of the fifth side. The sixth surface and the third side surface located between the fifth surface and the sixth surface, the reflective member covers the second side surface of the light guide member, the second wavelength conversion member, and the first wavelength conversion member The distance between the above-mentioned third side, the above-mentioned fifth surface and the above-mentioned sixth surface, that is, the thickness of the above-mentioned first wavelength conversion member, is 60 μm or more and 120 μm or less, and the average particle diameter of the above-mentioned first wavelength conversion particles is 4 μm or more. and 12 μm or less, the central particle diameter of the first wavelength conversion particle is 4 μm or more and 12 μm or less, relative to the total weight of the first wavelength conversion member, the first wavelength conversion particle It is 60% by weight or more and 75% by weight or less, and the distance between the third surface and the fourth surface, that is, the thickness of the second wavelength conversion member, is less than half of the thickness of the first wavelength conversion member. The light-emitting device of claim 1, wherein the average particle size of the first wavelength conversion particles is smaller than the average particle size of the second wavelength conversion particles. The light-emitting device of claim 1 or 2, wherein the second wavelength conversion particles are β-sialon phosphors. The light-emitting device of claim 1 or 2, wherein the thickness of the second wavelength conversion member is 20 μm or more and 60 μm or less. The light-emitting device according to claim 1 or 2, which includes a covering member covering the first wavelength conversion member. The light-emitting device of claim 1 or 2, wherein the standard deviation of the volume-based particle size distribution of the first wavelength conversion member is 0.3 μm or less.