TWI447961B - Light emitting diode packaging structure - Google Patents

Light emitting diode packaging structure Download PDF

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Publication number
TWI447961B
TWI447961B TW101113413A TW101113413A TWI447961B TW I447961 B TWI447961 B TW I447961B TW 101113413 A TW101113413 A TW 101113413A TW 101113413 A TW101113413 A TW 101113413A TW I447961 B TWI447961 B TW I447961B
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Taiwan
Prior art keywords
electrode
emitting diode
diode package
light
recessed portion
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TW101113413A
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Chinese (zh)
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TW201344965A (en
Inventor
Bo Yu Ko
Pu Wang
Chun Wei Wang
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Lextar Electronics Corp
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Priority to TW101113413A priority Critical patent/TWI447961B/en
Priority to US13/863,353 priority patent/US20130270602A1/en
Priority to EP13163724.1A priority patent/EP2654092A3/en
Publication of TW201344965A publication Critical patent/TW201344965A/en
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Publication of TWI447961B publication Critical patent/TWI447961B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Description

發光二極體封裝體Light-emitting diode package

本發明係有關於發光二極體,且特別是有關於一種具有由電鍍層覆蓋之側邊電極之發光二極體封裝體。The present invention relates to light emitting diodes, and more particularly to a light emitting diode package having a side electrode covered by a plating layer.

發光二極體導線架為發光二極體乘載發光晶片、提供發光晶片與外界電極連結、增益發光效率、改善晶片散熱之重要元件。發光二極體導線架之製作,通常依序經過金屬支架定型、金屬支架電鍍、金屬支架埋入射出成型等步驟,導線架最終以陣列方式陳列於金屬料板之上。亦由於發光二極體產品最終必須自所陳列之料板上脫離,故必將金屬截斷,進而發光二極體單體上會有金屬斷面。The light-emitting diode lead frame is an important component for the light-emitting diode to carry the light-emitting chip, to provide the light-emitting chip to the external electrode, to improve the luminous efficiency, and to improve the heat dissipation of the chip. The manufacture of the LED constellation is usually carried out by metal stenting, metal stent plating, metal stent embedding and forming, and the lead frame is finally displayed on the metal plate in an array. Also, since the light-emitting diode product must finally be detached from the material plate to be displayed, the metal must be cut off, and the metal part of the light-emitting diode body is formed.

依終端產品應用需求,導線架分別有發光面與焊接面平行之正發光形式,以及發光面與焊接面垂直之側發光形式。以排列方式分類,導線架陣列料板有各單體緊密排列之連板式料板,以及獨立陳列之分離式連板。According to the application requirements of the terminal products, the lead frame has a positive light-emitting form in which the light-emitting surface is parallel to the soldering surface, and a side-emitting form in which the light-emitting surface and the soldering surface are perpendicular. Classified by arrangement, the lead frame array plate has a continuous plate-connected material plate and a separate display separate plate.

當發光二極體的導線架係利用熱固性塑料形成時,必需搭配轉移成型(transfer molding)之工法來製作。採用各導線架單體緊密排列之連板式料板,發光二極體於封裝製程中,最終需要仰賴切割製程將各單體分離,致使於各單體切割面上必定會有因切割而產生金屬原材截面。由於金屬截面不被具導電與抗氧化之镀層所披覆,在終端產品應用時,該區域金屬有不與焊錫連結之風險,並且有因金屬氧化使該電阻值異常產生,造成電性探測異常之發生。When the lead frame of the light-emitting diode is formed of a thermosetting plastic, it must be fabricated by a transfer molding method. The use of the plate-type material plates in which the lead frames are closely arranged, and the light-emitting diodes in the packaging process, the final separation of the monomers is required by the cutting process, so that the metal is cut by the cutting on each of the single-cut surfaces. Raw material section. Since the metal cross section is not covered by the conductive and anti-oxidation coating, in the application of the terminal product, the metal in the region has the risk of not being connected with the solder, and the electrical resistance is caused by the oxidation of the metal, resulting in electrical detection. An abnormality has occurred.

一般而言,電極係設置在發光二極體封裝體之底部。然而,為了因應各種各式各樣的燈具設計及美觀需求,亦需要能夠電極設置於發光二極體封裝體之側壁。然而,如前述,發光二極體單體元件與金屬導線架是藉由裁切製程分離,而金屬導線架的裁切面即為側壁式發光二極體封裝體之側邊電極之暴露面。因此,發光二極體封裝體之側邊電極的暴露面積主要係取決定於導線架的厚度。如欲增加側邊電極的暴露面積,不僅會一併增加發光二極體封裝體之總厚度,且會大幅增加金屬材料的使用量及成本。Generally, the electrode system is disposed at the bottom of the light emitting diode package. However, in order to meet various lighting design and aesthetic requirements, it is also necessary to be able to provide electrodes on the side walls of the LED package. However, as described above, the LED component and the metal lead frame are separated by a cutting process, and the cut surface of the metal lead frame is the exposed surface of the side electrode of the sidewall type LED package. Therefore, the exposed area of the side electrodes of the LED package is mainly determined by the thickness of the lead frame. If the exposed area of the side electrodes is to be increased, the total thickness of the LED package will be increased, and the amount and cost of the metal material will be greatly increased.

此外,為了維持發光二極體之電氣特性,通常會塗佈至少一電鍍層於電極上。然而,電鍍層之塗佈步驟通常係為在進行裁切製程之前進行。因此,經由裁切製程形成側壁式發光二極體封裝體之側邊電極之暴露面無法被電鍍層所覆蓋。側邊電極的表面即為導線架之原始材料,例如裸銅。裸銅易於氧化,在經過長時間後,亦無法藉由測試這些側邊電極來得知發光二極體之電氣特性。此外,銲錫不易附著於裸銅表面,因此,發光二極體單體元件之側邊電極亦難以由銲錫將發其銲在其他封裝基板上或大型裝置上。In addition, in order to maintain the electrical characteristics of the light-emitting diode, at least one plating layer is usually applied to the electrode. However, the coating step of the plating layer is usually performed before the cutting process is performed. Therefore, the exposed surface of the side electrode forming the sidewall type LED package via the cutting process cannot be covered by the plating layer. The surface of the side electrode is the original material of the lead frame, such as bare copper. Bare copper is susceptible to oxidation, and after a long period of time, the electrical characteristics of the light-emitting diode cannot be known by testing these side electrodes. In addition, the solder is less likely to adhere to the bare copper surface. Therefore, it is difficult for the side electrodes of the single-element of the light-emitting diode to be soldered to other package substrates or large devices.

因此,業界所需的是一種新穎的發光二極體導線架及其製造方法,其可使發光二極體單體元件具有由電鍍層保護且具有大面積的側邊電極。Accordingly, what is needed in the industry is a novel light-emitting diode lead frame and method of fabricating the same that enables a light-emitting diode single element to have a side electrode that is protected by a plating layer and has a large area.

本發明實施例係提供一種發光二極體封裝體,包括:一導線架,包含:一第一電極,具有一第一功能區,及一第一延伸區自此第一功能區延伸出;及一第二電極,具有一第二功能區,及一第二延伸區自此第二功能區延伸出;一杯狀絕緣體,包覆此第一電極及此第二電極,此杯狀絕緣體之內側並形成一發光凹槽,暴露出此第一功能區與此第二功能區之上表面,且此杯狀絕緣體外側底部部分地露出此第一延伸區及此第二延伸區;一間隔區塊,設於發光凹槽底部,物理性地隔離此第一電極及此第二電極;以及一電鍍層,部分覆蓋於此第一電極和此第二電極表面。The embodiment of the present invention provides a light emitting diode package, comprising: a lead frame comprising: a first electrode having a first functional area, and a first extended area extending from the first functional area; and a second electrode having a second functional region, and a second extension region extending from the second functional region; a cup-shaped insulator covering the first electrode and the second electrode, the inner side of the cup insulator Forming a light-emitting recess to expose the first functional area and the upper surface of the second functional area, and the outer bottom portion of the cup-shaped insulator partially exposes the first extended area and the second extended area; a spacer block, The first electrode and the second electrode are physically separated at a bottom of the light-emitting groove; and a plating layer partially covering the first electrode and the second electrode surface.

為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下:The above and other objects, features and advantages of the present invention will become more <RTIgt;

本發明接下來將會提供許多不同的實施例以實施本發明中不同的特徵。各特定實施例中的組成及配置將會在以下作描述以簡化本發明。這些為實施例並非用於限定本發明。此外,在本說明書的各種例子中可能會出現重複的元件符號以便簡化描述,但這不代表在各個實施例及/或圖示之間有何特定的關連。此外,一第一元件形成於一第二元件“上方”、“之上”、“之下”或“上”可包含實施例中的該第一元件與第二元件直接接觸,或也可包含該第一元件與第二元件之間更有其他額外元件使該第一元件與第二元件無直接接觸。The invention will be followed by a number of different embodiments to implement different features of the invention. The compositions and configurations in the specific embodiments are described below to simplify the present invention. These are not intended to limit the invention. In addition, repeated element symbols may be present in various examples of the present description in order to simplify the description, but this does not represent a particular connection between the various embodiments and/or the drawings. In addition, a first element that is "above", "above", "below" or "on" a second element may include the first element in the embodiment being in direct contact with the second element, or may also comprise There are other additional elements between the first element and the second element such that the first element is not in direct contact with the second element.

第1A圖顯示為依照本發明一實施例之發光二極體封裝體之立體示意圖。第1B圖顯示為依照第1A圖之發光二極體封裝體之上視圖。第1C圖顯示為依照第1A圖之實施例之發光二極體封裝體之仰視圖。第1D圖顯示為依照第1A圖之發光二極體封裝體之第二電極之側視圖。FIG. 1A is a perspective view showing a light emitting diode package according to an embodiment of the invention. Fig. 1B is a top view showing the light emitting diode package in accordance with Fig. 1A. Fig. 1C is a bottom plan view showing the light emitting diode package in accordance with the embodiment of Fig. 1A. Fig. 1D is a side view showing the second electrode of the light emitting diode package in accordance with Fig. 1A.

參見第1A圖,依照本發明實施例所提供之發光二極體封裝體可包含由第一電極104及第二電極110組成之導線架,其中第一電極104及第二電極110可各自用以作為發光二極體150之兩電極。第一電極104及第二電極110與導線架陣列基板採用相同材料,例如銅,且其表面可由電鍍層108覆蓋。電鍍層108可擇自金及銀所組成之族群。發光二極體封裝體最終需自導線架陣列基板分離,故第一電極104及第二電極110可以金屬沖壓或是切割方式與導線架陣列基板分離。Referring to FIG. 1A, a light emitting diode package according to an embodiment of the invention may include a lead frame composed of a first electrode 104 and a second electrode 110, wherein the first electrode 104 and the second electrode 110 may be used respectively. As the two electrodes of the light-emitting diode 150. The first electrode 104 and the second electrode 110 are made of the same material as the lead frame array substrate, such as copper, and the surface thereof may be covered by the plating layer 108. The plating layer 108 can be selected from the group consisting of gold and silver. The LED package is finally separated from the lead frame array substrate, so that the first electrode 104 and the second electrode 110 can be separated from the lead frame array substrate by metal stamping or cutting.

第一電極104可包含第一功能區104A及自該第一功能區104延伸出之第一延伸區104B。第二電極110可包含第二功能區110A及自該第一功能區110A延伸出之第一延伸區110B。杯狀絕緣體124可設置於第一電極104及第二電極110上,並包覆第一電極104及第二電極110。杯狀絕緣體之內側可形成發光凹槽,以暴露出第一功能區104A之上表面及第二功能區110A之上表面。在一實施例中,發光二極體晶片150可設置於發光凹槽中,並可分別以第一導線152及第二導線154與第一電極104之第一功能區104A及第二電極110之第二功能區110A電性連接。間隔區塊130可設置於發光凹槽之底部,並物理性隔離第一電極104及第二電極110。例如,參見第1B圖,以上視角度觀之,杯狀絕緣體124覆蓋第一功能區104A及第二功能區110A之上表面的周圍部分,且位於杯狀絕緣體124內部之發光凹槽暴露出第一功能區104A及第二功能區110A之上表面的內側部分。杯狀絕緣體124可為熱固性樹脂,杯狀絕緣體124可包含熱固性樹脂,例如環氧樹脂、矽氧樹脂(silicone)或前述之組合。熱固性樹脂相較於熱塑性樹脂具有較佳之高耐光耐熱之特性,且相較於陶瓷材料及矽基板具有較高之設計彈性及較高的初始反射率。杯狀絕緣體124可由埋入射出製程形成。間隔區塊130與杯狀絕緣體124為相同材料形成。The first electrode 104 can include a first functional region 104A and a first extension region 104B extending from the first functional region 104. The second electrode 110 can include a second functional area 110A and a first extended area 110B extending from the first functional area 110A. The cup insulator 124 can be disposed on the first electrode 104 and the second electrode 110 and cover the first electrode 104 and the second electrode 110. The inner side of the cup-shaped insulator may form a light-emitting recess to expose the upper surface of the first functional area 104A and the upper surface of the second functional area 110A. In one embodiment, the LED array 150 can be disposed in the light-emitting recess, and can respectively be the first conductive line 152 and the second conductive line 154 and the first functional region 104A and the second electrode 110 of the first electrode 104. The second functional area 110A is electrically connected. The spacer block 130 may be disposed at the bottom of the light emitting recess and physically isolate the first electrode 104 and the second electrode 110. For example, referring to FIG. 1B, from above, the cup-shaped insulator 124 covers the peripheral portion of the upper surface of the first functional region 104A and the second functional region 110A, and the light-emitting recess located inside the cup-shaped insulator 124 exposes the first portion. An inner portion of the upper surface of the functional area 104A and the second functional area 110A. The cup-shaped insulator 124 may be a thermosetting resin, and the cup-shaped insulator 124 may comprise a thermosetting resin such as an epoxy resin, a silicone, or a combination thereof. The thermosetting resin has better high light and heat resistance than the thermoplastic resin, and has higher design flexibility and higher initial reflectance than the ceramic material and the ruthenium substrate. The cup insulator 124 can be formed by a buried incident process. The spacer block 130 is formed of the same material as the cup insulator 124.

此外,發光二極體晶片150除可以第一導線及第二導線與第一電極及第二電極電性連接外,在本發明另一實施例中,例如參見第4A及4B圖,其係分別顯示發光二極體封裝體之立體示意圖及上視圖。發光二極體晶片450係可跨越間隔區塊130,以同時位在第一電極104之第一功能區104A及第二電極110之第二功能區110A上。因此,發光二極體晶片450亦可設計為與第一電極104之第一功能區104A及第二電極110之第二功能區110直接接觸,或以覆晶方式(例如使用銲錫,圖中未顯示)與第一電極104之第一功能區104A及第二電極110之第二功能區110A電性連接,無需使用導線。In addition, in addition to the fact that the first and second wires are electrically connected to the first electrode and the second electrode, in another embodiment of the present invention, for example, see FIGS. 4A and 4B, respectively. A schematic perspective view and a top view of the LED package are shown. The LED array 450 can span the spacer block 130 to be simultaneously positioned on the first functional region 104A of the first electrode 104 and the second functional region 110A of the second electrode 110. Therefore, the LED wafer 450 can also be designed to be in direct contact with the first functional region 104A of the first electrode 104 and the second functional region 110 of the second electrode 110, or in a flip chip manner (eg, using solder, not shown) The display is electrically connected to the first functional area 104A of the first electrode 104 and the second functional area 110A of the second electrode 110 without using a wire.

繼續參見第1A至1D圖,第一電極104之第一延伸區104B可位於第一功能區104A之外側,並具有至少一部分暴露於杯狀絕緣體124之外側。第一延伸區104B之暴露部分可例如位於杯狀絕緣體之外側底部。第二電極110之第二延伸區110B可具有至少一部分暴露於杯狀絕緣體124之外側,且此暴露部分可與第一延伸區104B之暴露部分位於杯狀絕緣體124之相同側之底部。第一延伸區104B及第二延伸區110B可作為發光二極體封裝體之側邊電極。此外,在一實施例中,第一電極104及第二電極110可分別包含第一凹陷部106及第二凹陷部112,且此第一凹陷部106及此第二凹陷部112可分別位於杯狀絕緣體124之同一邊的外側底部,且此第一凹陷部106及第二凹陷部112之高度小於第一功能區104A及第二功能區110A之厚度。例如,第一凹陷部106可位於發光二極體封裝體之一角落,第二凹陷部112可位於發光二極體封裝體之另一角落,此兩角落分別位於發光二極體封裝體之同一邊上的兩端。第一凹陷部106可為具有圓弧側壁104B’之凹槽。相同地,如第1D圖所示,第二凹陷部112可為具有圓弧側壁110B’之凹槽。第一凹陷部106及第二凹陷部112之尺寸及形狀可依照發光二極體封裝體之設計需求作任意改變。Continuing to FIGS. 1A through 1D, the first extension 104B of the first electrode 104 can be located on the outside of the first functional region 104A and have at least a portion exposed to the outside of the cup insulator 124. The exposed portion of the first extension region 104B can be, for example, located on the outer side of the cup insulator. The second extension 110B of the second electrode 110 may have at least a portion exposed to the outside of the cup insulator 124, and the exposed portion may be located at the bottom of the same side of the cup insulator 124 as the exposed portion of the first extension 104B. The first extension region 104B and the second extension region 110B can serve as side electrodes of the LED package. In addition, in an embodiment, the first electrode 104 and the second electrode 110 may respectively include a first recess 106 and a second recess 112, and the first recess 106 and the second recess 112 may be respectively located in the cup. The outer bottom of the same side of the insulator 124, and the height of the first recess 106 and the second recess 112 are smaller than the thickness of the first functional area 104A and the second functional area 110A. For example, the first recessed portion 106 may be located at a corner of the LED package, and the second recessed portion 112 may be located at another corner of the LED package. The two corners are respectively located in the LED package. Both ends on one side. The first recess 106 can be a recess having a circular arc side wall 104B'. Similarly, as shown in Fig. 1D, the second recessed portion 112 may be a recess having a circular arc side wall 110B'. The size and shape of the first recessed portion 106 and the second recessed portion 112 can be arbitrarily changed according to the design requirements of the LED package.

在本發明實施例提供之發光二極體封裝體中,第一電極104及第二電極110可由發光二極體封裝切割製程得到,其裁切位置係位於第一延伸區104B及第二延伸區110B。因此,部分的第一延伸區104B及第二延伸區110B之表面(例如除第一凹陷部及第二凹陷部之外的側邊表面),係為未由電鍍層108覆蓋之暴露表面,例如裸銅表面。然而,值得注意的是,第一凹陷部106及第二凹陷部112雖位第一延伸區104B及第二延伸區110B中,但其表面仍由電鍍層108所覆蓋。易言之,除了部分的第一延伸區104B及第二延伸區110B之表面係為未經電鍍層108覆蓋之暴露表面,第一電極104及第二電極110之其餘的表面部分皆由電鍍層108所覆蓋。例如,參見第1C圖,其顯示第1A圖所示之發光二極體封裝體之仰視圖。由仰視角度觀之,第一電極104及第二電極110之部分側壁由杯狀絕緣體124包覆,並藉由間隔區塊130物理性隔離。第一電極104(包含第一功能區104A、第一延伸區104B)之底部表面及第二電極110(包含第二功能區110A、第二延伸區110B)之底部表面皆為由電鍍層108所覆蓋。此外,第一凹陷部106及第二凹陷部108之表面亦為由電鍍層108所覆蓋。In the LED package provided by the embodiment of the invention, the first electrode 104 and the second electrode 110 are obtained by a LED package cutting process, and the cutting position is located in the first extension region 104B and the second extension region. 110B. Therefore, the surfaces of the portions of the first extension region 104B and the second extension region 110B (eg, the side surfaces other than the first recess portion and the second recess portion) are exposed surfaces not covered by the plating layer 108, for example, Bare copper surface. However, it is worth noting that the first recessed portion 106 and the second recessed portion 112 are located in the first extension region 104B and the second extension region 110B, but the surface thereof is still covered by the plating layer 108. In other words, except that the surface of the first extension region 104B and the second extension region 110B are exposed surfaces covered by the unplated layer 108, the remaining surface portions of the first electrode 104 and the second electrode 110 are plated. Covered by 108. For example, see Fig. 1C, which shows a bottom view of the light emitting diode package shown in Fig. 1A. Viewed from a bottom view, a portion of the sidewalls of the first electrode 104 and the second electrode 110 are covered by the cup insulator 124 and physically separated by the spacer block 130. The bottom surface of the first electrode 104 (including the first functional region 104A, the first extension region 104B) and the bottom surface of the second electrode 110 (including the second functional region 110A and the second extension region 110B) are all provided by the plating layer 108. cover. In addition, the surfaces of the first recessed portion 106 and the second recessed portion 108 are also covered by the plating layer 108.

參見第1E圖,其顯示為依照本發明一實施例之連板式導線架陣列料片之仰視圖。此導線架連板結構可包含複數個相互連接的發光二極體封裝體單體。例如,第1A至1D圖所示之發光二極體封裝體可為由此導線架連板結構裁切得到之一單體。區域A可為由複數條平行之裁切線S及複數條平行之裁切線S’之間所定義之區域。裁切線S及S’可實質上垂直。因此,對準裁切線S進行裁切後,區域A之放大圖即如第1C圖所示。多個杯狀絕緣體124可設置於此導線架連板結構上,並包覆此導線架連板結構之外圍及填入導線架連板結構之空隙中。Referring to Figure 1E, there is shown a bottom plan view of a spliced leadframe array web in accordance with an embodiment of the present invention. The leadframe connection structure may comprise a plurality of interconnected light emitting diode package bodies. For example, the LED package shown in FIGS. 1A to 1D can be cut by the lead frame structure to obtain one of the cells. The area A may be an area defined by a plurality of parallel cut lines S and a plurality of parallel cut lines S'. The cutting lines S and S' can be substantially vertical. Therefore, after the cutting line S is cut, the enlarged view of the area A is as shown in FIG. 1C. A plurality of cup insulators 124 may be disposed on the lead frame structure and wrap around the periphery of the lead frame structure and fill the gaps of the lead frame structure.

值得注意的是,在裁切線S及S’的交會處可具有凹陷(第1E圖中顯示向紙內延伸)。此凹陷可例如為圓弧凹陷,其可由金屬沖壓形成。在一實施例中,這些凹陷可由其相鄰的發光二極體封裝體所共用,且其深度(即第1A圖中凹陷部之高度)可小於連板式導線架陣列料片之厚度(即第1A圖中之第一電極及第二電極之厚度)。例如,如第1E圖所示,每四個發光二極體封裝體單體共用凹陷部106,每四個發光二極體封裝體單體共用凹陷部112。因此,在經過裁切之後,第一凹陷部106及第二凹陷部112可分別位於發光二極體封裝體單體(區域A)之兩底部角落。此外,這些凹陷部106、112可為在形成電鍍層108之前形成,因而可由電鍍層108所覆蓋。因此,在經過裁切後,凹陷部106及112仍可由電鍍層108所覆蓋。It is worth noting that there may be depressions at the intersection of the cutting lines S and S' (shown in Figure 1E extending into the paper). This depression may for example be a circular arc depression, which may be formed by metal stamping. In an embodiment, the recesses may be shared by adjacent LED packages, and the depth (ie, the height of the recesses in FIG. 1A) may be less than the thickness of the tab-type lead frame array sheets (ie, The thickness of the first electrode and the second electrode in FIG. 1A). For example, as shown in FIG. 1E, the recessed portions 106 are shared by each of the four light emitting diode packages, and the recessed portions 112 are shared by every four of the light emitting diode packages. Therefore, after being cut, the first recessed portion 106 and the second recessed portion 112 may be respectively located at two bottom corners of the LED package body (region A). Moreover, the recesses 106, 112 may be formed prior to forming the plating layer 108 and thus may be covered by the plating layer 108. Therefore, the recesses 106 and 112 can still be covered by the plating layer 108 after being cut.

因此,藉由形成凹陷部106及112,發光二極體單體元件之側邊電極可被電鍍層108所保護。再者,凹陷部106及112相較於平面更具有增大的表面積。因此,依照本發明實施例所提供之發光二極體封裝體具有由電鍍層保護且具有大面積的側邊電極。需注意的是,如第1A至1D圖所示之發光二極體封裝體結構亦可實現於分離式導線架陣列料片,僅需在形成電鍍層之前先先於裁切線S及S’之交會處形成凹陷部即可。Therefore, by forming the recesses 106 and 112, the side electrodes of the single-element of the light-emitting diode can be protected by the plating layer 108. Furthermore, the recesses 106 and 112 have an increased surface area compared to the plane. Therefore, the light emitting diode package provided in accordance with an embodiment of the present invention has a side electrode protected by a plating layer and having a large area. It should be noted that the structure of the LED package as shown in FIGS. 1A to 1D can also be realized in the separate lead frame array material, which only needs to be before the cutting lines S and S' before forming the plating layer. The recess can be formed at the intersection.

參見第2A至2E圖,其顯示依照本發明另一實施例之發光二極體封裝體,其中第2A圖顯示為本發明另一實施例之發光二極體封裝體之立體示意圖。第2B圖顯示為依照第2A圖之發光二極體封裝體之上視圖,第2C圖顯示為依照第2A圖發光二極體封裝體之仰視圖,第2D圖顯示為依照第2A圖之發光二極體封裝體之第二電極之側視圖。本實施例與前述實施例之部分技術特徵大致上與前述實施例相同,故不再重複贅述。因此,除非特別提出,相似的參考標號代表相同或相似的元件。本實施例與前述實施例之不同在於,第一凹陷部及第二凹陷部為具有斜面側壁之凹槽。2A to 2E are diagrams showing a light emitting diode package according to another embodiment of the present invention, wherein FIG. 2A is a perspective view showing a light emitting diode package according to another embodiment of the present invention. 2B is a top view of the LED package according to FIG. 2A, FIG. 2C is a bottom view of the LED package according to FIG. 2A, and FIG. 2D is a diagram according to FIG. 2A. Side view of the second electrode of the diode package. The technical features of the present embodiment and the foregoing embodiments are substantially the same as those of the foregoing embodiments, and thus the detailed description thereof will not be repeated. Accordingly, the same reference numerals are used to refer to the This embodiment differs from the previous embodiment in that the first recessed portion and the second recessed portion are recesses having beveled side walls.

參見第2A圖,依照本發明實施例所提供之發光二極體封裝體可包含可包含由第一電極204及第二電極210組成之導線架。第一電極204可包含第一功能區204A及自該第一功能區204延伸出之第一延伸區204B。第二電極210可包含第二功能區210A及自該第一功能區210A延伸出之第一延伸區210B。第一電極204及第二電極210與導線架陣列基板採用相同材料,例如銅,且其表面可由電鍍層208覆蓋。電鍍層208可擇自金及銀所組成之族群。發光二極體封裝體最終需自導線架陣列基板分離,故第一電極204及第二電極210可以金屬沖壓或是切割方式與導線架陣列基板分離。Referring to FIG. 2A, the LED package provided in accordance with an embodiment of the present invention may include a lead frame that may include a first electrode 204 and a second electrode 210. The first electrode 204 can include a first functional region 204A and a first extension region 204B extending from the first functional region 204. The second electrode 210 can include a second functional area 210A and a first extended area 210B extending from the first functional area 210A. The first electrode 204 and the second electrode 210 are made of the same material as the lead frame array substrate, such as copper, and the surface thereof may be covered by the plating layer 208. The plating layer 208 can be selected from the group consisting of gold and silver. The LED package is finally separated from the lead frame array substrate, so that the first electrode 204 and the second electrode 210 can be separated from the lead frame array substrate by metal stamping or cutting.

杯狀絕緣體224可設置於第一電極204及第二電極210上,包覆第一電極204及第二電極210。杯狀絕緣體之內側可形成發光凹槽,以暴露出第一功能區204A之上表面及第二功能區210A之上表面。發光二極體晶片250可設置於發光凹槽中,並可分別以第一導線252及第二導線254與第一電極204之第一功能區204A及第二電極210之第二功能區210A電性連接。間隔區塊230可設置於發光凹槽之底部,並物理性隔離第一電極204及第二電極210。The cup insulator 224 may be disposed on the first electrode 204 and the second electrode 210 to cover the first electrode 204 and the second electrode 210. The inner side of the cup insulator may form a light emitting groove to expose the upper surface of the first functional region 204A and the upper surface of the second functional region 210A. The LED substrate 250 can be disposed in the light emitting recess, and can be electrically connected to the first functional region 204A of the first electrode 204 and the second functional region 210A of the second electrode 210 by the first conductive line 252 and the second conductive line 254, respectively. Sexual connection. The spacer block 230 can be disposed at the bottom of the light emitting recess and physically isolate the first electrode 204 and the second electrode 210.

第一電極204之第一延伸區204B可位於第一功能區204A之外側,並具有至少一部分暴露於杯狀絕緣體224之一外側底部。第二電極210之第二延伸區210B可具有至少一部分暴露於杯狀絕緣體224之一外側,且此暴露部分可與第一延伸區204B之暴露部分位於杯狀絕緣體224之相同側之底部。第一延伸區204B及第二延伸區210B可作為發光二極體封裝體之側邊電極。在一實施例中,第一電極204及第二電極210可分別包含第一凹陷部206及第二凹陷部212,且此第一凹陷部206及此第二凹陷部212可分別位於杯狀絕緣體224之同一邊的外側底部。此外,第一及第二凹陷部206、212之高度可小於第一功能區204A及第二功能區210A之厚度。例如,第一凹陷部206及第二凹陷部212可分別位於發光二極體封裝體之同一邊上的兩端。第一凹陷部206可為具有斜面側壁204B’之凹槽。相同地,如第2D圖所示,第二凹陷部212可為具有斜面側壁210B’之凹槽。第一凹陷部206及第二凹陷部212之尺寸及形狀可依照發光二極體封裝體之設計需求作任意改變。部分的第一延伸區204B及第二延伸區210B之表面係為未經電鍍層208覆蓋之暴露表面(例如除第一凹陷部及第二凹陷部之外的側邊表面),例如裸銅表面。第一凹陷部206及第二凹陷部212雖位第一延伸區204B及第二延伸區210B中,但其表面仍由電鍍層208所覆蓋。The first extension 204B of the first electrode 204 may be located on the outer side of the first functional region 204A and have at least a portion exposed to one of the outer bottoms of the cup insulator 224. The second extension 210B of the second electrode 210 may have at least a portion exposed to one of the outer sides of the cup insulator 224, and the exposed portion may be located at the bottom of the same side of the cup insulator 224 as the exposed portion of the first extension 204B. The first extension region 204B and the second extension region 210B can serve as side electrodes of the light emitting diode package. In one embodiment, the first electrode 204 and the second electrode 210 may respectively include a first recess 206 and a second recess 212, and the first recess 206 and the second recess 212 may be respectively located in a cup insulator. The outer bottom of the same side of 224. In addition, the heights of the first and second recesses 206, 212 may be smaller than the thickness of the first functional area 204A and the second functional area 210A. For example, the first recessed portion 206 and the second recessed portion 212 may be respectively located at opposite ends of the same side of the LED package. The first recess 206 can be a recess having a beveled sidewall 204B'. Similarly, as shown in Fig. 2D, the second recess 212 may be a recess having a beveled sidewall 210B'. The size and shape of the first recessed portion 206 and the second recessed portion 212 can be arbitrarily changed according to the design requirements of the LED package. The surface of the portion of the first extension 204B and the second extension 210B is an exposed surface covered by the unplated layer 208 (eg, a side surface other than the first recess and the second recess), such as a bare copper surface. . The first recessed portion 206 and the second recessed portion 212 are located in the first extension region 204B and the second extension region 210B, but the surface thereof is still covered by the plating layer 208.

參見第2E圖,其顯示為依照本發明另一實施例之導線架連板結構之仰視圖。第2A至2D圖所示之發光二極體封裝體可為由此導線架連板結構裁切得到之一單體。區域A可為由複數條平行之裁切線S及複數條平行之裁切線S’之間所定義之區域。多個杯狀絕緣體224可設置於此導線架連板結構上,並包覆此導線架連板結構之外圍及填入導線架連板結構之空隙中。在裁切線S及S’的交會處可具有凹陷(第2E圖中顯示向紙內延伸)。凹陷部206及212可例如為方形或梯形凹陷,其可由金屬沖壓形成。在一實施例中,這些凹陷206、212可由其相鄰的發光二極體封裝體所共用,且其深度(即第2A圖中凹陷部之高度)可小於連板式導線架陣列料片之厚度(即第2A圖中之第一電極及第二電極之厚度)。例如,如第2E圖所示,每四個發光二極體封裝體單體共用凹陷部206,每四個發光二極體封裝體單體共用凹陷部212。因此,在經過裁切之後,第一凹陷部206及第二凹陷部212可分別位於發光二極體封裝體單體(區域A)之兩底部角落。此外,這些凹陷部可為在形成電鍍層之前形成,因而可由電鍍層208所覆蓋,且在經過裁切後,凹陷部206及212仍可由電鍍層208所覆蓋,並可作為由電鍍層208所覆蓋之側邊電極。Referring to Fig. 2E, there is shown a bottom plan view of a leadframe splicing structure in accordance with another embodiment of the present invention. The LED package shown in FIGS. 2A to 2D can be cut by the lead frame structure to obtain one of the cells. The area A may be an area defined by a plurality of parallel cut lines S and a plurality of parallel cut lines S'. A plurality of cup insulators 224 may be disposed on the lead frame structure and wrap around the periphery of the lead frame structure and fill the gaps of the lead frame structure. There may be a depression at the intersection of the cutting lines S and S' (the display in Fig. 2E extends into the paper). The recesses 206 and 212 can be, for example, square or trapezoidal depressions that can be formed from metal stamping. In an embodiment, the recesses 206, 212 may be shared by their adjacent LED packages, and the depth (ie, the height of the recess in FIG. 2A) may be less than the thickness of the tab-type lead frame array. (i.e., the thickness of the first electrode and the second electrode in Fig. 2A). For example, as shown in FIG. 2E, the recessed portion 206 is shared by every four LED package bodies, and the recess portion 212 is shared by every four LED packages. Therefore, after being cut, the first recessed portion 206 and the second recessed portion 212 may respectively be located at two bottom corners of the LED package body (region A). Moreover, the recesses may be formed prior to forming the plating layer and thus may be covered by the plating layer 208, and after being cut, the recesses 206 and 212 may still be covered by the plating layer 208 and may be used as the plating layer 208 Cover the side electrodes.

需注意的是,如第2A至2D圖所示之發光二極體封裝體結構亦可實現於分離式導線架陣列料片,僅需在形成電鍍層之前先先於裁切線S及S’之交會處形成凹陷部即可。因此,藉由形成凹陷部206及212,發光二極體單體元件之側邊電極可被電鍍層208所保護。再者,凹陷部206及212相較於平面更具有增大的表面積。因此,依照本發明實施例所提供之發光二極體封裝體具有由電鍍層保護且具有大面積的側邊電極。It should be noted that the structure of the LED package as shown in FIGS. 2A to 2D can also be realized in the separate lead frame array material, which only needs to be before the cutting lines S and S' before forming the plating layer. The recess can be formed at the intersection. Therefore, by forming the recesses 206 and 212, the side electrodes of the single-element of the light-emitting diode can be protected by the plating layer 208. Furthermore, the recesses 206 and 212 have an increased surface area compared to the plane. Therefore, the light emitting diode package provided in accordance with an embodiment of the present invention has a side electrode protected by a plating layer and having a large area.

參見第3A至3E圖,其顯示依照本發明又一實施例之發光二極體封裝體,其中第3A圖顯示為發光二極體封裝體之立體示意圖。第3B圖顯示為依照第3A圖之發光二極體封裝體之上視圖。第3C圖顯示為依照第3A圖之發光二極體封裝體之仰視圖。第3D圖顯示為依照第3A圖之發光二極體封裝體之第二電極之側視圖。本實施例與前述實施例之部分技術特徵大致上與前述實施例相同,故不再重複贅述。因此,除非特別提出,相似的參考標號代表相同或相似的元件。本實施例與前述實施例之不同在於,第一凹陷部及第二凹陷部之高度大於第一功能區及第二功能區之厚度。Referring to FIGS. 3A to 3E, there is shown a light emitting diode package according to still another embodiment of the present invention, wherein FIG. 3A is a perspective view showing a light emitting diode package. Figure 3B shows a top view of the LED package in accordance with Figure 3A. Fig. 3C is a bottom plan view showing the light emitting diode package in accordance with Fig. 3A. Fig. 3D is a side view showing the second electrode of the light emitting diode package in accordance with Fig. 3A. The technical features of the present embodiment and the foregoing embodiments are substantially the same as those of the foregoing embodiments, and thus the detailed description thereof will not be repeated. Accordingly, the same reference numerals are used to refer to the The difference between this embodiment and the foregoing embodiment is that the heights of the first recessed portion and the second recessed portion are greater than the thicknesses of the first functional region and the second functional region.

參見第3A圖,依照本發明實施例所提供之發光二極體封裝體可包含可包含由第一電極304及第二電極310組成之導線架。第一電極304可包含第一功能區304A及自該第一功能區304延伸出之第一延伸區304B。第二電極310可包含第二功能區310A及自該第一功能區310A延伸出之第一延伸區310B。第一電極304及第二電極310之組成可由如第3E圖之導線架連板結構(於隨後討論)裁切得到,且其大部分表面可由電鍍層308覆蓋。電鍍層308可擇自金及銀所組成之族群。杯狀絕緣體324可設置於第一電極304及第二電極310上,包覆第一電極304及第二電極310。杯狀絕緣體之內側可形成發光凹槽,以暴露出第一功能區304A之上表面及第二功能區310A之上表面。發光二極體晶片350可設置於發光凹槽中,並可分別以第一導線352及第二導線354與第一電極304之第一功能區304A及第二電極310之第二功能區310A電性連接。間隔區塊310可設置於發光凹槽之底部,並物理性隔離第一電極304及第二電極310。Referring to FIG. 3A, a light emitting diode package according to an embodiment of the present invention may include a lead frame that may include a first electrode 304 and a second electrode 310. The first electrode 304 can include a first functional region 304A and a first extension region 304B extending from the first functional region 304. The second electrode 310 can include a second functional area 310A and a first extended area 310B extending from the first functional area 310A. The composition of the first electrode 304 and the second electrode 310 can be cut by a lead frame structure as described in FIG. 3E (discussed later), and a majority of its surface can be covered by the plating layer 308. The plating layer 308 can be selected from the group consisting of gold and silver. The cup insulator 324 may be disposed on the first electrode 304 and the second electrode 310 to cover the first electrode 304 and the second electrode 310. The inner side of the cup-shaped insulator may form a light-emitting recess to expose the upper surface of the first functional region 304A and the upper surface of the second functional region 310A. The LED substrate 350 can be disposed in the light-emitting recess, and can be electrically connected to the first functional region 304A of the first electrode 304 and the second functional region 310A of the second electrode 310 by the first wire 352 and the second wire 354, respectively. Sexual connection. The spacer block 310 can be disposed at the bottom of the light emitting recess and physically isolate the first electrode 304 and the second electrode 310.

第一電極304之第一延伸區304B可位於第一功能區304A之外側,並具有至少一部分暴露於杯狀絕緣體324之一外側。第一延伸區304B之暴露部分可例如位於杯狀絕緣體之一外側之底部。第二電極310之第二延伸區310B可具有至少一部分暴露於杯狀絕緣體324之一外側,且此暴露部分可與第一延伸區304B之暴露部分位於杯狀絕緣體324之相同側之底部。第一延伸區304B及第二延伸區310B可作為發光二極體封裝體之側邊電極。在一實施例中,第一電極304及第二電極310可分別包含第一凹陷部306及第二凹陷部312,且此第一凹陷部306及此第二凹陷部312可分別位於杯狀絕緣體324之同一邊的外側底部,且此凹陷部之高度大於第一功能區304A及第二功能區310A之厚度。例如,第一凹陷部306及第二凹陷部312可分別位於發光二極體封裝體之同一邊上的兩端,且第一凹陷部306及第二凹陷部312。第一凹陷部306可為具有彎折側壁304B’之凹槽。相同地,如第3D圖所示,第二凹陷部312具有彎折側壁310B’之凹槽。第一凹陷部306及第二凹陷部312之尺寸及形狀可依照發光二極體封裝體之設計需求作任意改變。部分的第一延伸區304B及第二延伸區310B之表面係為未經電鍍層308覆蓋之暴露表面(例如除第一凹陷部及第二凹陷部之外的側邊表面),例如裸銅表面。第一凹陷部306及第二凹陷部312雖位第一延伸區304B及第二延伸區310B中,但其表面仍由電鍍層308所覆蓋。The first extension 304B of the first electrode 304 may be located on the outer side of the first functional region 304A and have at least a portion exposed to the outside of one of the cup insulators 324. The exposed portion of the first extension 304B can be, for example, located at the bottom of one of the outer sides of the cup insulator. The second extension 310B of the second electrode 310 may have at least a portion exposed to one of the outer sides of the cup insulator 324, and the exposed portion may be located at the bottom of the same side of the cup insulator 324 as the exposed portion of the first extension 304B. The first extension region 304B and the second extension region 310B can serve as side electrodes of the light emitting diode package. In one embodiment, the first electrode 304 and the second electrode 310 may respectively include a first recess 306 and a second recess 312, and the first recess 306 and the second recess 312 may be respectively located in the cup insulator The outer bottom of the same side of the 324, and the height of the recess is greater than the thickness of the first functional area 304A and the second functional area 310A. For example, the first recessed portion 306 and the second recessed portion 312 may be respectively located at two ends of the same side of the LED package, and the first recessed portion 306 and the second recessed portion 312. The first recess 306 can be a recess having a curved sidewall 304B'. Similarly, as shown in Fig. 3D, the second recessed portion 312 has a recess that bends the side wall 310B'. The size and shape of the first recessed portion 306 and the second recessed portion 312 can be arbitrarily changed according to the design requirements of the LED package. The surface of the portion of the first extension region 304B and the second extension region 310B is an exposed surface covered by the unplated layer 308 (eg, a side surface other than the first recess portion and the second recess portion), such as a bare copper surface. . The first recessed portion 306 and the second recessed portion 312 are located in the first extension region 304B and the second extension region 310B, but the surface thereof is still covered by the plating layer 308.

參見第3E圖,其顯示為依照本發明又一實施例之導線架連板結構之仰視圖。第3A至3D圖所示之發光二極體封裝體可為由此導線架連板結構裁切得到之一單體。區域A可為由複數條平行之裁切線S及複數條平行之裁切線S’之間所定義之區域。多個杯狀絕緣體324可設置於此導線架連板結構上,並包覆此導線架連板結構之外圍及填入導線架連板結構之空隙中。在裁切線S及S’的交會處可具有凹陷(第3E圖中顯示向紙內延伸)。此凹陷可例如為方形或梯形凹陷,其可由金屬沖壓形成。在一實施例中,這些凹陷可由其相鄰的發光二極體封裝體所共用,且其深度(即第3A圖中之凹陷部之高度)可大於金屬連板導線架之厚度。Referring to Fig. 3E, there is shown a bottom plan view of a leadframe splicing structure in accordance with yet another embodiment of the present invention. The LED package shown in FIGS. 3A to 3D can be cut by the lead frame structure to obtain one of the cells. The area A may be an area defined by a plurality of parallel cut lines S and a plurality of parallel cut lines S'. A plurality of cup insulators 324 may be disposed on the lead frame structure and cover the periphery of the lead frame structure and fill the gaps of the lead frame structure. There may be a depression at the intersection of the cutting lines S and S' (the extension shown in Fig. 3E extends into the paper). This depression may for example be a square or trapezoidal depression, which may be formed by metal stamping. In one embodiment, the recesses may be shared by their adjacent light emitting diode packages, and the depth (i.e., the height of the recesses in FIG. 3A) may be greater than the thickness of the metal plate leadframe.

例如,如第3E圖所示,每四個發光二極體封裝體單體共用凹陷部306,每四個發光二極體封裝體單體共用凹陷部312。因此,在經過裁切之後,第一凹陷部306及第二凹陷部312可分別位於發光二極體封裝體單體(區域A)之兩底部角落。此外,這些凹陷部306、312可在電鍍層308之前形成,因而可由電鍍層308所覆蓋,且在經過裁切後,凹陷部306及312仍可由電鍍層308所覆蓋,並可作為由電鍍層308所覆蓋之側邊電極。需注意的是,如第3A至3D圖所示之發光二極體封裝體結構亦可實現於分離式導線架陣列料片,僅需在形成電鍍層之前先先於裁切線S及S’之交會處形成凹陷部即可。For example, as shown in FIG. 3E, the recessed portions 306 are shared by every four LED packages, and the recesses 312 are shared by each of the four LED packages. Therefore, after being cut, the first recessed portion 306 and the second recessed portion 312 may be respectively located at two bottom corners of the LED package body (region A). Moreover, the recesses 306, 312 can be formed prior to the plating layer 308 and thus can be covered by the plating layer 308, and after being cut, the recesses 306 and 312 can still be covered by the plating layer 308 and can be used as a plating layer The side electrodes covered by 308. It should be noted that the LED package structure as shown in FIGS. 3A to 3D can also be implemented in a separate lead frame array material, which only needs to be before the cutting lines S and S' before forming the plating layer. The recess can be formed at the intersection.

因此,藉由形成凹陷部306及312,發光二極體單體元件之側邊電極可被電鍍層308所保護。再者,凹陷部306及312相較於平面更具有增大的表面積。因此,依照本發明實施例所提供之發光二極體封裝體具有由電鍍層保護且具有大面積的側邊電極。Therefore, by forming the recesses 306 and 312, the side electrodes of the single-element of the light-emitting diode can be protected by the plating layer 308. Furthermore, the recesses 306 and 312 have an increased surface area compared to the plane. Therefore, the light emitting diode package provided in accordance with an embodiment of the present invention has a side electrode protected by a plating layer and having a large area.

雖然本發明已以數個較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the scope of the present invention, and any one of ordinary skill in the art can make any changes without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims.

104...第一電極104. . . First electrode

104A...第一功能區104A. . . First functional area

104B...第一延伸區104B. . . First extension

104B’...弧形側壁104B’. . . Curved side wall

106...第一凹陷部106. . . First depression

108...電鍍層108. . . Plating

110...第二電極110. . . Second electrode

110A...第二功能區110A. . . Second functional area

110B...第二延伸區110B. . . Second extension

110B’...弧形側壁110B’. . . Curved side wall

112...第二凹陷部112. . . Second depression

130...間隔區塊130. . . Spacer block

124...杯狀絕緣體124. . . Cup insulator

150...發光二極體150. . . Light-emitting diode

152...第一導線152. . . First wire

154...第二導線154. . . Second wire

204...第一電極204. . . First electrode

204A...第一功能區204A. . . First functional area

204B...第一延伸區204B. . . First extension

204B’...斜面側壁204B’. . . Beveled side wall

206...第一凹陷部206. . . First depression

208...電鍍層208. . . Plating

210...第二電極210. . . Second electrode

210A...第二功能區210A. . . Second functional area

210B...第二延伸區210B. . . Second extension

210B’...斜面側壁210B’. . . Beveled side wall

212...第二凹陷部212. . . Second depression

230...間隔區塊230. . . Spacer block

224...杯狀絕緣體224. . . Cup insulator

250...發光二極體250. . . Light-emitting diode

252...第一導線252. . . First wire

254...第二導線254. . . Second wire

304...第一電極304. . . First electrode

304A...第一功能區304A. . . First functional area

304B...第一延伸區304B. . . First extension

304B’...彎折側壁304B’. . . Bending side wall

306...第一凹陷部306. . . First depression

308...電鍍層308. . . Plating

310...第二電極310. . . Second electrode

310A...第二功能區310A. . . Second functional area

310B...第二延伸區310B. . . Second extension

310B’...彎折側壁310B’. . . Bending side wall

312...第二凹陷部312. . . Second depression

330...間隔區塊330. . . Spacer block

324...杯狀絕緣體324. . . Cup insulator

350...發光二極體350. . . Light-emitting diode

352...第一導線352. . . First wire

354...第二導線354. . . Second wire

450...發光二極體450. . . Light-emitting diode

第1A圖顯示為依照本發明一實施例之發光二極體封裝體之立體示意圖。FIG. 1A is a perspective view showing a light emitting diode package according to an embodiment of the invention.

第1B圖顯示為依照第1A圖所示之發光二極體封裝體之上視圖。Fig. 1B is a top view showing the light emitting diode package shown in Fig. 1A.

第1C圖顯示為依照第1A圖所示之發光二極體封裝體之仰視圖。Fig. 1C is a bottom plan view showing the light emitting diode package shown in Fig. 1A.

第1D圖顯示為依照第1A圖所示之發光二極體封裝體之第二電極之側視圖。Fig. 1D is a side view showing the second electrode of the light emitting diode package shown in Fig. 1A.

第1E圖顯示為依照本發明一實施例之導線架連板結構。Figure 1E shows a leadframe splicing structure in accordance with an embodiment of the present invention.

第2A圖顯示為依照本發明另一實施例之發光二極體封裝體之立體示意圖。FIG. 2A is a perspective view showing a light emitting diode package according to another embodiment of the present invention.

第2B圖顯示為依照第2A圖所示之發光二極體封裝體之上視圖。Fig. 2B is a top view showing the light emitting diode package shown in Fig. 2A.

第2C圖顯示為依照第2A圖所示之發光二極體封裝體之仰視圖。Fig. 2C is a bottom plan view showing the light emitting diode package shown in Fig. 2A.

第2D圖顯示為依照第2A圖所示之發光二極體封裝體之第二電極之側視圖。Fig. 2D is a side view showing the second electrode of the light emitting diode package shown in Fig. 2A.

第2E圖顯示為依照本發明另一實施例之導線架連板結構。Fig. 2E is a view showing a lead frame connecting plate structure in accordance with another embodiment of the present invention.

第3A圖顯示為依照本發明又一實施例之發光二極體封裝體之立體示意圖。FIG. 3A is a perspective view showing a light emitting diode package according to still another embodiment of the present invention.

第3B圖顯示為依照第3A圖所示之發光二極體封裝體之上視圖。Fig. 3B is a top view showing the light emitting diode package shown in Fig. 3A.

第3C圖顯示為依照第3A圖所示之發光二極體封裝體之仰視圖。Fig. 3C is a bottom plan view showing the light emitting diode package shown in Fig. 3A.

第3D圖顯示為依照第3A圖所示之發光二極體封裝體之第二電極之側視圖。Fig. 3D is a side view showing the second electrode of the light emitting diode package shown in Fig. 3A.

第3E圖顯示為依照本發明又一實施例之導線架連板結構。Figure 3E shows a leadframe splicing structure in accordance with yet another embodiment of the present invention.

第4A圖顯示為依照本發明再一實施例之發光二極體封裝體之立體示意圖。FIG. 4A is a perspective view showing a light emitting diode package according to still another embodiment of the present invention.

第4B圖顯示為依照第4A圖所示之發光二極體封裝體之上視圖。Fig. 4B is a top view showing the light emitting diode package in accordance with Fig. 4A.

104...第一電極104. . . First electrode

104A...第一功能區104A. . . First functional area

104B...第一延伸區104B. . . First extension

104B’...弧形側壁104B’. . . Curved side wall

106...第一凹陷部106. . . First depression

108...電鍍層108. . . Plating

110...第二電極110. . . Second electrode

110A...第二功能區110A. . . Second functional area

110B...第二延伸區110B. . . Second extension

112...第二凹陷部112. . . Second depression

124...杯狀絕緣體124. . . Cup insulator

130...間隔區塊130. . . Spacer block

150...發光二極體150. . . Light-emitting diode

152...第一導線152. . . First wire

154...第二導線154. . . Second wire

Claims (13)

一種發光二極體封裝體,包括:一導線架,包含:一第一電極,具有一第一功能區,及一第一延伸區自該第一功能區延伸出;及一第二電極,具有一第二功能區,及一第二延伸區自該第二功能區延伸出;一杯狀絕緣體,包覆該第一電極及該第二電極,該杯狀絕緣體之內側並形成一發光凹槽,暴露出該第一功能區與該第二功能區之上表面,且該杯狀絕緣體外側底部部分地露出該第一延伸區及該第二延伸區;一間隔區塊,設於發光凹槽底部,物理性地隔離該第一電極及該第二電極;以及一電鍍層,部分覆蓋於該第一電極和該露出的第二電極表面。A light emitting diode package includes: a lead frame comprising: a first electrode having a first functional area, and a first extended area extending from the first functional area; and a second electrode having a second functional area, and a second extension area extending from the second functional area; a cup-shaped insulator covering the first electrode and the second electrode, and forming a light-emitting groove on the inner side of the cup-shaped insulator Exposing the first functional area and the upper surface of the second functional area, and the outer bottom of the cup-shaped insulator partially exposes the first extended area and the second extended area; a spacer block is disposed at the bottom of the light-emitting groove Physically isolating the first electrode and the second electrode; and a plating layer partially covering the first electrode and the exposed second electrode surface. 如申請專利範圍第1項所述之發光二極體封裝體,其中該露出的第一延伸區與該露出的第二延伸區分別具有一第一凹陷部與一第二凹陷部。The light emitting diode package of claim 1, wherein the exposed first extending region and the exposed second extending region respectively have a first recessed portion and a second recessed portion. 如申請專利範圍第2項所述之發光二極體封裝體,其中該第一凹陷部及該第二凹陷部係分別位在該杯狀絕緣體之同一邊的外側底部。The light-emitting diode package of claim 2, wherein the first recessed portion and the second recessed portion are respectively located at an outer bottom portion of the same side of the cup-shaped insulator. 如申請專利範圍第2項所述之發光二極體封裝體,其中該第一凹陷部及該第二凹陷部係分別位在該杯狀絕緣體之同一邊的兩端的外側底部。The light-emitting diode package of claim 2, wherein the first recessed portion and the second recessed portion are respectively located at outer bottoms of both ends of the same side of the cup-shaped insulator. 如申請專利範圍第4項所述之發光二極體封裝體,其中該第一凹陷部及該第二凹陷部包含圓弧側壁、斜面側壁或彎折側壁。The light emitting diode package of claim 4, wherein the first recessed portion and the second recessed portion comprise a circular arc side wall, a sloped side wall or a bent side wall. 如申請專利範圍第5項所述之發光二極體封裝體,其中該第一凹陷部及該第二凹陷部係由沖壓所形成。The light emitting diode package of claim 5, wherein the first recessed portion and the second recessed portion are formed by stamping. 如申請專利範圍第1項所述之發光二極體封裝體,其中該電鍍層係選自金及銀所組成之族群。The light-emitting diode package of claim 1, wherein the plating layer is selected from the group consisting of gold and silver. 如申請專利範圍第1項所述之發光二極體封裝體,更包含一發光二極體晶片,設置於該發光凹槽內之該第一與該第二功能區上。The illuminating diode package of claim 1, further comprising a light emitting diode chip disposed on the first and second functional regions in the illuminating recess. 如申請專利範圍第1項所述之發光二極體封裝體,更包含一發光二極體晶片,設置於該發光凹槽內之該第一或該第二功能區上。The illuminating diode package of claim 1, further comprising a light emitting diode chip disposed on the first or second functional area in the illuminating recess. 如申請專利範圍第8項所述之發光二極體封裝體,其中該發光二極體晶片電性連接至該第一功能區及該該第二功能區。The light emitting diode package of claim 8, wherein the light emitting diode chip is electrically connected to the first functional area and the second functional area. 如申請專利範圍第9項所述之發光二極體封裝體,其中該發光二極體晶片以導線與該第一功能區及該第二功能區電性連接。The illuminating diode package of claim 9, wherein the illuminating diode chip is electrically connected to the first functional area and the second functional area by wires. 如申請專利範圍第1項所述之發光二極體封裝體,其中該杯狀絕緣體更包含一熱固性樹脂。The light-emitting diode package of claim 1, wherein the cup-shaped insulator further comprises a thermosetting resin. 如申請專利範圍第12項所述之發光二極體封裝體,其中該熱固性樹脂包含環氧樹脂、矽氧樹脂或前述之組合。The light-emitting diode package of claim 12, wherein the thermosetting resin comprises an epoxy resin, a silicone resin, or a combination thereof.
TW101113413A 2012-04-16 2012-04-16 Light emitting diode packaging structure TWI447961B (en)

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