KR20190092306A - Light-emitting device - Google Patents

Abstract

The present invention provides a light emitting device capable of suppressing uneven distribution of photometric chromaticity. The light emitting device comprises: a light emitting element having a first surface and a second surface located in a reverse side of the first surface; a light guide member covering a side surface of the light emitting element; a first wavelength conversion member covering the first surface and having a first basic material and a first wavelength conversion particle; and a reflection member covering the side surface of the light emitting element, the side surface of the light guide member, and the side surface of the first wavelength conversion member and in contact with the light emitting element. A thickness of the first wavelength conversion member is 60 μm or more and 120 μm or less. An average particle size of the first wavelength conversion particle is 4 μm or more and 12 μm or less. A center particle size of the first wavelength conversion particle is 4 μm or more and 12 μm or less. The first wavelength conversion particle is 60 weight% or more and 75 weight% or less with respect to the total weight of the first wavelength conversion member.

Description

Light-emitting device {LIGHT-EMITTING DEVICE}

The present invention relates to a light emitting device.

BACKGROUND ART A light emitting device having a light emitting element, an optical layer transmitting at least part of light emitted by a light emitting element disposed on the light emitting element, and a plate-shaped optical member mounted on the optical layer and transmitting at least part of light emitted by the light emitting element are known. (For example, refer patent document 1).

Japanese Patent Laid-Open No. 2012-134355

When used as a backlight or illumination, the light emitting device which can obtain the light of uniform chromaticity regardless of a place is calculated | required. Therefore, the embodiment which concerns on this invention aims at providing the light-emitting device which can suppress that the light distribution chromaticity becomes uneven.

A light emitting device according to an aspect of the present invention includes a light emitting element having a first surface, a second surface positioned on an opposite side of the first surface, a light guide member covering the side surface of the light emitting element, and the first surface. A first wavelength converting member covering a surface and having a first base material and a first wavelength converting particle, and a side surface of the light emitting element, a side surface of the light guide member, and a side surface of the first wavelength converting member and in contact with the light emitting element; And a thickness of the first wavelength converting member is 60 µm or more and 120 µm or less, and the average particle diameter of the first wavelength converting particles is 4 µm or more and 12 µm or less, and the center particle diameter of the first wavelength converting particles is It is 4 micrometers or more and 12 micrometers or less, and the said 1st wavelength conversion particle | grain is 60% or more and 75 weight% or less with respect to the total weight of a said 1st wavelength conversion member.

According to the light emitting device of the embodiment related to the present invention, it is possible to provide a light emitting device which can suppress uneven distribution of chromaticity.

FIG. 1A is a schematic perspective view of a light emitting device according to Embodiment 1. FIG.
FIG. 1B is a schematic perspective view of a light emitting device according to Embodiment 1. FIG.
FIG. 1C is a schematic front view of a light emitting device according to Embodiment 1. FIG.
FIG. 2A is a schematic cross sectional view taken along a line 2A-2A in FIG. 1C. FIG.
FIG. 2B is a schematic cross-sectional view taken along the line 2B-2B of FIG. 1C. FIG.
FIG. 2C is a schematic cross-sectional view of a modification of the light emitting device according to Embodiment 1. FIG.
FIG. 2D is a schematic cross-sectional view of a modification of the light emitting device according to Embodiment 1. FIG.
FIG. 3A is a schematic rear view of the light emitting device according to Embodiment 1. FIG.
FIG. 3B is a schematic bottom view of the light emitting device according to Embodiment 1. FIG.
FIG. 3C is a schematic side view of the light emitting device according to Embodiment 1. FIG.
4 is a schematic side view of the substrate according to the first embodiment.
FIG. 5A is a schematic cross-sectional view of a light emitting device according to Embodiment 1 and an enlarged view showing the inside of a dotted line.
5B is a schematic cross-sectional view of a modification of the light emitting device according to the first embodiment, and an enlarged view showing the inside of the dotted line in an enlarged manner.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described suitably with reference to drawings. However, the light emitting device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following description unless there is a specific description. In addition, the content demonstrated about one embodiment is applicable also to a modification. In addition, the magnitude | size, positional relationship, etc. of the member which are shown by the drawing may be exaggerated for clarity.

<Embodiment 1>

The light emitting device 1000 according to the embodiment of the present invention will be described based on FIGS. 1A to 5B. The light emitting device 1000 includes a light emitting element 20, a light guide member 50, a first wavelength conversion member 31, and a reflective member 40. The light emitting element 20 has a first surface 201 and a second surface 203 located on the opposite side of the first surface 201. The light guide member 50 covers the side surface 202 of the light emitting element. The first wavelength conversion member 31 covers the first surface 201 of the light emitting element. In addition, the first wavelength conversion member 31 includes the first base material 312 and the first wavelength conversion particle 311. The thickness of the 1st wavelength conversion member 31 is 60 micrometers or more and 120 micrometers or less. The average particle diameter of the 1st wavelength conversion particle 311 is 4 micrometers or more and 12 micrometers or less. The central particle diameter of the 1st wavelength conversion particle 311 is 4 micrometers or more and 12 micrometers or less. The first wavelength conversion particles 311 are 60% by weight or more and 75% by weight or less based on the total weight of the first wavelength conversion member 31. The reflective member 40 covers the side surface of the light emitting element, the side surface of the light guide member, and the side surface of the first wavelength conversion member. In addition, the reflective member 40 is in contact with the light emitting element. The light emitting device should just be equipped with at least 1 light emitting element. That is, the light emitting device may be provided with only one light emitting element, and may be provided with plural light emitting elements.

The average particle diameter of the 1st wavelength conversion particle 311 contained in the 1st wavelength conversion member 31 is 4 micrometers or more and 12 micrometers or less. Since the average particle diameter of the 1st wavelength conversion particle 311 is 12 micrometers or less, when the density | concentration of the 1st wavelength conversion particle 311 contained in the 1st wavelength conversion member 31 is the same, the 1st base material 312 ) And the first wavelength conversion particle 311 may be increased. As the interface between the first base material and the first wavelength converting particles increases, the light from the light emitting element is easily diffused by the interface between the first base material and the first wavelength converting particles. Thereby, since the light from a light emitting element diffuses in a 1st wavelength conversion member, it can suppress that the light distribution chromaticity of a light emitting device is uneven. Since the average particle diameter of a 1st wavelength conversion particle | grain is 4 micrometers or more, it becomes easy to take out light from a light emitting element, and the light extraction efficiency of a light emitting device improves.

In this specification, the average particle diameter of the 1st wavelength conversion particle 311 is an average value of the particle diameter measured by FSSS method (Fisher Sub-Sieve Sizer). The average particle diameter measured by the Fischer method is measured using, for example, Fisher Sub-Siezee Sizer Model 95 (manufactured by Fisher Scientific).

The central particle diameter of the 1st wavelength conversion particle 311 contained in the 1st wavelength conversion member 31 is 4 micrometers or more and 12 micrometers or less. When the center particle diameter of a 1st wavelength conversion particle is 12 micrometers or less, when the density | concentration of the 1st wavelength conversion particle 311 contained in the 1st wavelength conversion member 31 is the same, a 1st base material and 1st wavelength conversion The interface of the particles increases. As the interface between the first base material and the first wavelength converting particles increases, the light from the light emitting element is easily diffused by the interface between the first base material and the first wavelength converting particles. Thereby, since the light from a light emitting element diffuses in a 1st wavelength conversion member, it can suppress that the light distribution chromaticity of a light emitting device is uneven. When the center particle diameter of the first wavelength conversion particles is 4 µm or more, light from the light emitting element is easily taken out, and thus the light extraction efficiency of the light emitting device is improved.

In this specification, the center particle diameter of the 1st wavelength conversion particle 311 is a volume average particle diameter (median diameter), and is a particle diameter (D50: median diameter) which the volume accumulation frequency from a small diameter side reaches 50%. The center particle diameter can be measured with a laser diffraction particle size distribution measuring device (MASTER # SIZER # 2000, manufactured by MALVERN).

It is preferable that the particle size D10 which the volume accumulation frequency from the small diameter side of a 1st wavelength conversion particle reaches 10% is 6 micrometers or more and 10 micrometers or less. It is preferable that the particle diameter D90 which the volume accumulation frequency from the small diameter side of a 1st wavelength conversion particle reaches 90% is 15 micrometers or more and 20 micrometers or less.

It is preferable that the standard deviation (sigma log) of the particle size distribution based on the volume reference of the first wavelength conversion particle is 0.3 µm or less. The nonuniformity of a 1st wavelength conversion particle | grains makes it easy to form the wavelength conversion member 31 of uniform thickness.

As a 1st wavelength conversion particle | grain, a manganese active fluoride fluorescent substance is mentioned, for example. Manganese-activated fluoride-based phosphors can obtain light emission with a relatively narrow spectral line width, and are a preferable member from the viewpoint of color reproducibility.

The thickness of the 1st wavelength conversion member 31 is 60 micrometers or more and 120 micrometers or less. When the thickness of the first wavelength conversion member is 60 μm or more, the first wavelength conversion particle 311 that can be contained in the first wavelength conversion member 31 can be increased. When the thickness of the first wavelength conversion member 31 is 120 µm or less, the light emitting device can be thinned. In addition, the thickness of a 1st wavelength conversion member is a thickness of the 1st wavelength conversion member in a Z direction.

The first wavelength conversion particles 311 are 60% by weight or more and 75% by weight or less based on the total weight of the first wavelength conversion member 31. Since the content of the first wavelength conversion particles is increased by 60 wt% or more of the first wavelength conversion particles relative to the total weight of the first wavelength conversion member, the interface between the first base material and the first wavelength conversion particles increases. As the interface between the first base material and the first wavelength converting particles increases, the light from the light emitting element is easily diffused by the interface between the first base material and the first wavelength converting particles. Thereby, since the light from a light emitting element diffuses in a 1st wavelength conversion member, it can suppress that the light distribution chromaticity of a light emitting device is uneven. Since the ratio of the 1st base material in a 1st wavelength conversion member increases by 75 weight% or less of the 1st wavelength conversion particle with respect to the total weight of a 1st wavelength conversion member, it suppresses that a 1st wavelength conversion member breaks. can do. In addition, the first wavelength conversion member may have only the first wavelength conversion particles as the wavelength conversion particles, or may have wavelength conversion particles of a material different from the first wavelength conversion particles.

The light emitting device may be provided with the 2nd wavelength conversion member 32 located between the light emitting element 20 and the 1st wavelength conversion member 31 like the light emitting device 1000 shown to FIG. 2A, Like the light emitting device 1000A shown in FIG. 2C, the second wavelength conversion member positioned between the light emitting element 20 and the first wavelength conversion member 31 may not be provided. The second wavelength conversion member 32 includes a second base material 322 and second wavelength conversion particles 321. It is preferable that the average particle diameter of the first wavelength conversion particle 311 is smaller than the average particle diameter of the second wavelength conversion particle 321. Since the average particle diameter of the second wavelength conversion particles is larger than the average particle diameter of the first wavelength conversion particles, light from the light emitting element is easily guided to the second wavelength conversion member 32, so that light extraction efficiency of the light emitting device is improved. Moreover, since the average particle diameter of the 1st wavelength conversion particle 311 is smaller than the average particle diameter of the 2nd wavelength conversion particle 321, the light from a light emitting element in the 1st wavelength conversion member 31 becomes easy to diffuse, It is possible to suppress uneven distribution of chromaticity of the light emitting device. The material of the first wavelength conversion particles and the material of the second wavelength conversion particles may be the same or different. In addition, the material of the 1st base material 312 and the material of the 2nd base material 322 may be same or different. If the material of the 1st base material 312 and the material of the 2nd base material 322 are the same, the bonding strength of the 1st wavelength conversion member 31 and the 2nd wavelength conversion member 32 will improve. If the material of the first base material 312 and the material of the second base material 322 are different, a difference in refractive index occurs between the first base material 312 and the second base material 322. Thereby, since the light from a light emitting element becomes easy to diffuse in the interface of the 1st base material 312 and the 2nd base material 322, the uneven distribution of the light emitting device can be suppressed. It is preferable that the refractive index of the first base material 312 is larger than the refractive index of the second base material 322. By doing in this way, total reflection of the light from a light emitting element at the interface of the 1st base material 312 and the 2nd base material 322 can be suppressed. This improves the luminous efficiency of the light emitting device.

It is preferable that the thickness of the 2nd wavelength conversion member 32 is 20 micrometers or more and 60 micrometers or less. When the thickness of the second wavelength conversion member 32 is 20 µm or more, the second wavelength conversion particles 321 that can be contained in the second wavelength conversion member 32 can be increased. When the thickness of the second wavelength conversion member 32 is 60 µm or less, the light emitting device can be thinned. In addition, the thickness of a 2nd wavelength conversion member is a thickness of the 2nd wavelength conversion member in a Z direction.

It is preferable that the thickness of the 2nd wavelength conversion member 32 is half or less of the thickness of the 1st wavelength conversion member 31. FIG. By doing in this way, the light from a light emitting element becomes easy to irradiate to the 1st wavelength conversion member 31 more than the case where the 2nd wavelength conversion member 32 is thick. For example, when the 1st wavelength conversion member 31 is 80 +/- 5micrometer, it is preferable that the thickness of the 2nd wavelength conversion member 32 is 35 +/- 5micrometer. In addition, the thickness of the coating member 33 which coat | covers the 1st wavelength conversion member 31 mentioned later may have the thickness equivalent to the 1st wavelength conversion member 31. FIG. For example, the thickness of the first wavelength conversion member 31 is 80 ± 5 μm, the thickness of the second wavelength conversion member 32 is 35 ± 5 μm, and the thickness of the covering member 33 is 80 ± 5 μm. It may be. In addition, in this specification, an equivalent thickness means that the change of about 5 micrometers is allowable.

It is preferable that the peak wavelength of the light from the second wavelength conversion particle 321 excited to the light emitting element is shorter than the peak wavelength of the light from the first wavelength conversion particle 311 excited to the light emitting element. The peak wavelength of the light from the second wavelength converting particles 321 excited to the light emitting element is shorter than the peak wavelength of the light from the first wavelength converting particles 311 excited to the light emitting element, thereby the second wavelength excited to the light emitting element. The light from the conversion particles can excite the first wavelength conversion particles. Thereby, the light from the excited 1st wavelength conversion particle can be increased. Since the 1st wavelength conversion member 31 is arrange | positioned on the 2nd wavelength conversion member 32, the light from the 2nd wavelength conversion particle excited to the light emitting element tends to be emitted to a 1st wavelength conversion particle.

The peak wavelength of the light from the first wavelength conversion particle 311 excited to the light emitting element is 610 nm or more and 750 nm or less, and the peak wavelength of the light from the second wavelength conversion particle 321 excited to the light emitting element is 500 nm or more. It is preferable that it is 570 nm or less. By doing in this way, a light emitting device with high color rendering property can be obtained. The light emitting element (blue light emitting element) whose emission peak wavelength is 430 nm or more and 475 nm or less, the 1st wavelength conversion particle whose peak wavelength of the light excited to the light emitting element is 610 nm or more and 750 nm or less, and excitation to a light emitting element The light emitting device of white light emission can be obtained by combining the 2nd wavelength conversion particle whose peak wavelength of the light which has been made is 500 nm or more and 570 nm or less. For example, the phosphor of manganese active potassium silicate fluoride is mentioned as a 1st wavelength conversion particle, and (beta) sialon type fluorescent substance is mentioned as a 2nd wavelength conversion particle. When using the phosphor of manganese active potassium silicate fluoride as a 1st wavelength conversion particle, especially the 2nd wavelength conversion member 32 located between the light emitting element 20 and the 1st wavelength conversion member 31 is provided. It is preferable. Although the first wavelength conversion particles, which are manganese active fluoride phosphors, are liable to cause luminance saturation, the second wavelength conversion member 32 is positioned between the first wavelength conversion member 31 and the light emitting element 20 so that light from the light emitting element can be obtained. Irradiation to this 1st wavelength conversion particle | grain can be suppressed excessively. Thereby, deterioration of the 1st wavelength conversion particle which is a manganese active fluoride fluorescent substance can be suppressed.

As shown in FIG. 2A, the light emitting element 20 includes a first surface 201 and a second surface 203 opposite to the first surface 201. The light emitting element 20 includes at least a semiconductor laminate 23, and the semiconductor laminate 23 is provided with positive and negative electrodes 21 and 22. The positive / negative electrodes 21 and 22 are formed on the same side as the light emitting element 20, and it is preferable that the light emitting element 20 is flip chip mounted on the mounting substrate. As a result, a wire for supplying electricity to the positive / negative electrode of the light emitting element becomes unnecessary, so that the light emitting device can be miniaturized. When the light emitting device is flip chip mounted, the positive and negative electrodes 21 and 22 of the light emitting device are positioned on the second surface 203. In addition, although the light emitting element 20 has the element substrate 24 in this embodiment, the element substrate 24 may be removed.

The light guide member 50 covers the side surface 202 of the light emitting element. The light guide member 50 has a higher transmittance of light from the light emitting element 20 than the reflective member 40. For this reason, since the light guide member 50 covers the side surface 202 of the light emitting element, the light emitted from the side surface of the light emitting element 20 passes through the light guide member 50, and it is easy to take out outside the light emitting device. The luminous efficiency can be improved. In addition, the light guide member 50 may be located between the first surface 201 and the light transmissive member 30 of the light emitting element, and may not be located between the first surface 201 and the light transmissive member 30 of the light emitting element. . Since the light guide member is a member for bonding the light emitting element and the light transmissive member, the light guide member is positioned between the first surface 201 and the light transmissive member 30 of the light emitting element, thereby improving the bonding strength of the light emitting element and the light transmissive member. .

The reflective member 40 covers the side surface of the light emitting element, the side surface of the light guide member, and the side surface of the first wavelength conversion member. By doing in this way, it can be set as the light emitting device with favorable "visibility" with high contrast of a light emitting area and a non-light emitting area. In addition, at least a portion of the reflective member 40 is in contact with the light emitting element. At least a part of the reflective member 40 contacts the light emitting element, whereby the light emitting device can be miniaturized. It is preferable that the reflective member 40 is in contact with the second surface 203 of the light emitting element. By doing in this way, it can suppress that light from a light emitting element is absorbed by the board | substrate which mounts a light emitting element.

Like the light emitting device 1000 shown in FIG. 2A, the covering member 33 may be provided to cover the first wavelength conversion member 31. The covering member 33 does not contain wavelength conversion particle | grains substantially. By providing the covering member 33 which covers the first wavelength converting member 31, the covering member 33 functions as a protective layer even when the first wavelength converting particles which are weak in moisture are used. Deterioration can be suppressed. As a wavelength conversion particle | grains weak in water, a manganese active fluoride fluorescent substance is mentioned, for example. Manganese-activated fluoride-based phosphors are capable of obtaining light emission with a relatively narrow spectral line width, and are a preferable member from the viewpoint of color reproducibility. The term "contains substantially no wavelength conversion particles" means that wavelength conversion particles that are inevitably incorporated are not excluded, and the content rate of the wavelength conversion particles is preferably 0.05% by weight or less. In addition, in this specification, the 1st wavelength conversion member 31, the 2nd wavelength conversion member 32, and / or the covering member 33 may be called the translucent member 30 in some cases.

Like the light emitting device 1000C shown in FIG. 2D, the coating film 34 covering the upper surface of the light transmitting member 30 may be provided. The film 34 is an aggregate of film particles that are nanoparticles. In addition, a film may be only a film particle and may contain a film particle and a resin material. Since the refractive index of the film is different from the refractive index of the base material of the translucent member positioned at the outermost surface, the emission chromaticity of the light emitting device can be corrected. The base material of the translucent member located in the outermost surface means the base material of the layer which forms the surface opposite to the surface on the light extraction surface side of a light emitting element in a translucent member. For example, when the refractive index of the film 34 is larger than the refractive index of the base material of the light transmissive member located at the outermost surface, the reflected light component at the interface between the film and the air is the base material and air of the light transmissive member located at the outermost surface. It is larger than the reflected light component in the interface of the. For this reason, since the reflected light component returned to a translucent member can be increased, it becomes easy to excite wavelength conversion particle | grains. Thereby, the emission chromaticity of the light emitting device can be corrected to the long wavelength side. In addition, when the refractive index of the film 34 is smaller than the refractive index of the base material of the translucent member positioned at the outermost surface, the reflected light component at the interface between the film and the air is the reflected light component at the interface between the base material of the light transmissive member and the air. Decreases more. This makes it possible to reduce the reflected light component returned to the light transmitting member, which makes it difficult to excite the wavelength conversion particles. Thereby, the emission chromaticity of the light emitting device can be corrected to the short wavelength side. For example, when using a phenyl-type silicone resin as a base material of the translucent member located in the outermost surface, titanium oxide, aluminum oxide, etc. are mentioned as a film particle which corrects the emission chromaticity of a light emitting device to a long wavelength side. When the base material of the translucent member located in the outermost surface uses a phenyl silicone resin, silicon oxide etc. are mentioned as a film particle which corrects the emission chromaticity of a light emitting device to a short wavelength side. In the case where the light emitting device includes a plurality of light transmitting members, the top surface of one light transmitting member may be coated with a coating, and the top surface of the other light transmitting member may not be coated with a coating. Whether or not to form a film covering the upper surface of the translucent member can be appropriately selected in accordance with the correction of the emission chromaticity of the light emitting device. In addition, when the light emitting device includes a plurality of light transmitting members, the upper surface of one light transmitting member is covered with a film having a refractive index larger than the refractive index of the base material of the light transmitting member located at the outermost surface, and the other light transmitting member is The upper surface may be coated with a film having a refractive index smaller than that of the base material of the translucent member positioned at the outermost surface. The material of the film which coats a translucent member can be suitably selected according to correction | amendment of the light emission chromaticity of a light emitting device. The film can be formed by a known method such as potting with a dispenser, spraying with inkjet or spray.

The light emitting device may include a substrate 10 on which a light emitting element is placed. For example, the board | substrate 10 is equipped with the base material 11, the 1st wiring 12, the 2nd wiring 13, the 3rd wiring 14, and the via 15. As shown in FIG. The base material 11 has a front face 111 extending in the first direction in the long direction and a second direction in the short direction, a rear face 112 positioned on the opposite side of the front face, and adjacent to the front face 111 in front ( 111 has a bottom face 113 orthogonal to the bottom face 113 and an upper face 114 positioned on the opposite side of the bottom face 113. The base material 11 further has at least one recessed part 16. The first wiring 12 is disposed on the front surface 111 of the base material 11. The second wiring 13 is disposed on the back surface 112 of the base material 11. The light emitting element 20 is electrically connected to the first wiring 12 and mounted on the first wiring 12. The reflective member 40 covers the side surface 202 of the light emitting element 20 and the front surface 111 of the substrate. At least one recessed part is opened to the back surface 112 and the bottom surface 113. The third wiring 14 covers the inner wall of the recess and is electrically connected to the second wiring. The via 15 is in contact with the first wiring 12 and the second wiring. The via 15 electrically connects the first wiring 12 and the second wiring 13. In addition, the via 15 penetrates the back surface 112 from the front surface 111 of the base material 11. In addition, orthogonal in this specification means allowing the inclination of about +/- 3 degrees at 90 degrees.

The via 15 may be in contact with the third wiring, and the via 15 may be separated from the third wiring. Since the via 15 is in contact with the third wiring, heat from the light emitting element can be transferred from the first wiring 12 to the second wiring 13 and / or the third wiring 14 through the via 15. The heat dissipation of the light emitting device 1000 can be improved. Since the via 15 is separated from the third wiring, the via and the concave portion do not overlap when viewed from the rear side, and the strength of the substrate is improved. When there are a plurality of vias 15, one of the vias may contact the third wiring, and the other via may be separated from the third wiring.

When the light emitting element 20 is flip-chip mounted on the substrate 10, the positive / negative electrodes 21 and 22 of the light emitting element are connected to the substrate 10 via the conductive adhesive member 60. When the light emitting element 20 is flip-chip mounted on the substrate 10, the first wiring 12 preferably includes the convex portion 121. The positive and negative electrodes 21 and 22 of the light emitting element 20 are positioned on the convex portion 121 of the first wiring 12, whereby the first wiring 12 and the light emitting element are formed through the conductive adhesive member 60. When the positive / negative electrodes 21 and 22 are connected, the position of the light emitting element and the substrate can be easily aligned by the self alignment effect.

It is preferable that the via 15 is circular when viewed from the back side. By doing in this way, it can form easily by a drill etc .. In the present specification, the circular shape includes not only a complete circle but also a shape close thereto (for example, an elliptical shape or a quadrangle of four corners may be shaped like a large arc shape).

The via 15 may have a structure in which a conductive material is filled in the through hole of the base material, and as shown in FIG. 2A, the vias 15 and the fourth wire 151 covering the surface of the through hole of the base material are provided. The charging member 152 filled in the enclosed area may be provided. The charging member 152 may be conductive or may be insulating. It is preferable to use a resin material for the filling member 152. Generally, since the resin material before hardening has fluidity higher than the metal material before hardening, it is easy to fill in the 4th wiring 151. For this reason, manufacture of a board | substrate becomes easy by using a resin material for a filling member. As a resin material which is easy to fill, an epoxy resin is mentioned, for example. When using a resin material as a filling member, it is preferable to contain an addition member in order to lower a linear expansion coefficient. By doing in this way, since the difference of the linear expansion coefficient with a 4th wiring becomes small, it can suppress that a gap arises between a 4th wiring and a charging member by the heat from a light emitting element. As an addition member, silicon oxide is mentioned, for example. Moreover, when a metal material is used for the filling member 152, heat dissipation can be improved. In the case where the via 15 is formed by filling a conductive material into the through hole of the substrate, it is preferable to use a metal material such as Ag or Cu having high thermal conductivity.

The light emitting device 1000 can be fixed to the mounting substrate by a joining member such as solder formed in the concave portion 16. One may be sufficient as the recessed part with which a board | substrate is equipped, and two or more may be sufficient as it. When there are a plurality of recesses, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. The depth of the concave portion may be the same depth on the upper surface side and the bottom surface side, or may be deeper than the upper surface side. As shown in FIG. 2B, when the depth of the recessed portion 16 in the Z direction is deeper from the bottom surface side than the upper surface side, the thickness W1 of the substrate located on the upper surface side of the recessed portion in the Z direction is the bottom surface side of the recessed portion. It can be made thicker than the thickness W2 of the base material located in. Thereby, the fall of strength of a base material can be suppressed. In addition, when the depth W3 of the recessed portion on the bottom surface side is deeper than the depth W4 of the recessed portion on the upper surface side, the volume of the bonding member formed in the recessed portion increases, so that the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. . Although the light emitting device 1000 is a top emission type (top view type) in which the rear surface 112 of the substrate 11 and the mounting substrate are mounted to face each other, the bottom surface 113 of the substrate 11 is mounted facing the mounting substrate. Even in the side light emission type (side view type), the bonding strength with the mounting substrate can be improved by increasing the volume of the bonding member.

The bonding strength between the light emitting device 1000 and the mounting substrate can be particularly improved in the case of side light emission type. Since the depth of the recessed part in Z direction becomes deeper at the bottom face side than the upper face side, the area of the opening part of the recessed part in a bottom face can be enlarged. By increasing the area of the opening of the concave portion in the bottom face facing the mounting substrate, the area of the joining member located on the bottom face can also be increased. Thereby, since the area of the bonding member located on the surface facing the mounting substrate can be increased, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved.

It is preferable that the maximum of the depth of the recessed part in a Z direction is 0.4 times-0.9 times the thickness of the base material in a Z direction. If the depth of the recess is deeper than 0.4 times the thickness of the substrate, the volume of the bonding member formed in the recess increases, so that the bonding strength between the light emitting device and the mounting substrate can be improved. If the depth of the recess is shallower than 0.9 times the thickness of the substrate, the decrease in strength of the substrate can be suppressed.

As shown in FIG. 2B, the recessed part 16 preferably includes a parallel part 161 extending from the rear face 112 to the bottom face 113 in a parallel direction (Z direction). By providing the parallel part 161, even if the area of the opening part of the recessed part in the back surface is the same, the volume of a recessed part can be enlarged. By increasing the volume of the recess, the amount of bonding members such as solder that can be formed in the recess can be increased, so that the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. In addition, parallel in this specification means allowing the inclination of about +/- 3 degrees. Moreover, the concave part 16 is provided with the inclined part 162 which inclines in the direction from which the thickness of the base material 11 becomes thick from the bottom face 113 as seen from a cross section. The inclined portion 162 may be a straight line or may be curved.

It is preferable that the maximum of the height of the recessed part in a Y direction is 0.3 times-0.75 times the thickness of the base material in a Y direction. Since the depth of the concave portion in the Y direction is thicker than 0.3 times the thickness of the substrate, the volume of the bonding member formed in the concave portion can be increased to improve the bonding strength between the light emitting device and the mounting substrate. Since the length of the recessed part in a Y direction is shallower than 0.75 times the thickness of a base material, the fall of the strength of a base material can be suppressed.

As shown in FIG. 3A, when there are many recessed parts 16 on the back surface, it is preferable to be located in left-right symmetry with respect to the centerline 3C of the base material parallel to a Y direction. By doing in this way, when the light emitting device is mounted on the mounting substrate via the bonding member, self-alignment works effectively, and the light emitting device can be accurately mounted within the mounting range.

The light emitting device may be provided with the insulating film 18 which covers a part of the second wiring 13. By providing the insulating film 18, insulation on the back surface can be ensured and short circuit prevention can be achieved. Moreover, peeling of a 2nd wiring from a base material can be prevented.

In the bottom face, the depth of the recess in the Z direction may be substantially constant, and the depth of the recess may be different at the center and the end. As shown in FIG. 3B, in the bottom face, it is preferable that the depth D1 at the center of the concave portion 16 is the maximum of the depth of the concave portion in the Z direction. By doing in this way, since the thickness D2 of the base material in a Z direction can be thickened at the edge part of a recessed part of an X direction in a bottom face, the intensity | strength of a base material can be improved. In addition, in this specification, a center means that the change of about 5 micrometers is allowable. The recessed part 16 can be formed by well-known methods, such as a drill and a laser.

As shown in FIG. 3C, the side surface 403 in the longitudinal direction of the reflective member 40 positioned on the bottom surface 113 side is preferably inclined to the inside of the light emitting device 1000 in the Z direction. In this way, when the light emitting device 1000 is mounted on the mounting substrate, the contact between the side surface 403 of the reflective member 40 and the mounting substrate is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. It is preferable that the side surface 404 of the longitudinal direction of the reflective member 40 located in the upper surface 114 side inclines inside the light emitting device 1000 in a Z direction. By doing in this way, the contact of the side surface of the reflective member 40 and the adsorption nozzle (collet) is suppressed, and the damage of the reflective member 40 at the time of the adsorption | suction of the light emitting device 1000 can be suppressed. Thus, the side surface 403 of the longitudinal direction of the reflective member 40 located in the bottom surface 113 side, and the side surface 404 of the longitudinal direction of the reflective member 40 located in the upper surface 114 side are formed from the back surface. It is preferable to incline inside the light emitting device 1000 in the front direction (Z direction). Although the inclination angle (theta) of the reflection member 40 can be selected suitably, it is preferable that it is 0.3 degrees or more and 3 degrees or less from a viewpoint of achieving such an effect and the intensity | strength of the reflection member 40, and are 0.5 degrees or more and 2 degrees or less. It is more preferable, It is still more preferable that it is 0.7 degrees or more and 1.5 degrees or less. In addition, it is preferable that the right side and the left side of the light emitting device 1000 have substantially the same shape. In this way, the light emitting device 1000 can be miniaturized.

Like the board | substrate 10 shown in FIG. 4, when viewed from the front, it is preferable that the 1st wiring 12 is equipped with the narrow width part of a short length of a Y direction, and the wide part of a long length of a Y direction. The length D3 of the narrow part of the Y direction is shorter than the length D4 of the wide part of the Y direction. The narrow part is located in the X direction from the center of the via 15 when viewed from the front, and is located in the part where the electrode of a light emitting element is located in the X direction. The wide part is located in the center of the via 15 when viewed from the front. Since the 1st wiring 12 has a narrow part, the area which the electroconductive adhesive member which electrically connects the electrode of a light emitting element and a 1st wiring wets on a 1st wiring can be made small. Thereby, it becomes easy to control the shape of a conductive adhesive member. The peripheral portion of the first wiring may have a rounded corner.

As shown in FIG. 5A, the first wiring, the second wiring and / or the third wiring may have a wiring main portion 12A and plating 12B formed on the wiring main portion 12A. In the present specification, the wiring refers to the first wiring, the second wiring and / or the third wiring. As 12 A of wiring main parts, well-known materials, such as copper, can be used. By providing the plating 12B on the wiring main portion 12A, the reflectance on the surface of the wiring can be improved or sulfidation can be suppressed. For example, nickel plating 120A containing phosphorus may be located on the wiring main part 12A. Since nickel improves hardness by containing phosphorus, since the nickel plating 120A containing phosphorus is located on the wiring main part 12A, hardness of wiring improves. This can suppress the occurrence of burrs in the wirings when the wirings are cut due to the separation of the light emitting device. Nickel plating containing phosphorus may be formed by the electrolytic plating method, and may be formed by the electroless plating method.

As shown in Fig. 5A, the gold plating 120B is preferably located on the outermost surface of the plating 12B. By placing gold plating on the outermost surface of the plating, oxidation and corrosion on the surfaces of the first wiring 12, the second wiring 13 and / or the third wiring 14 can be suppressed to obtain good solderability. Can be. The reflectance can be improved or sulfidation can be suppressed. The gold plating 120B located at the outermost surface of the plating 12B is preferably formed by an electrolytic plating method. The electrolytic plating method can reduce the content of catalyst poisons such as sulfur than the electroless plating method. When the addition reaction type silicone resin using a platinum catalyst is cured at a position in contact with the gold plating, the gold plating formed by the electrolytic plating method has a low sulfur content, so that the reaction between sulfur and platinum can be suppressed. Thereby, it can suppress that an addition reaction type | mold silicone resin using a platinum type catalyst produces hardening defect. When the gold plating 120B which contacts the nickel plating 120A containing phosphorus is formed, it is preferable that the nickel plating 120A and gold plating 120B containing phosphorus are formed by the electroplating method. By forming plating in the same manner, the manufacturing cost of the light emitting device can be suppressed. In addition, nickel plating should just contain nickel, gold plating should just contain gold, and other materials may contain.

It is preferable that the thickness of nickel plating containing phosphorus is thicker than the thickness of gold plating. Since the thickness of nickel plating containing phosphorus is thicker than the thickness of gold plating, the hardness of the 1st wiring 12, the 2nd wiring 13, and / or the 3rd wiring 14 becomes easy to improve. 5 times or more and 500 times or less of the thickness of gold plating are preferable, and, as for the thickness of the nickel plating containing phosphorus, 10 times or more and 100 times or less are more preferable.

Like the light emitting device 1000C shown in FIG. 5B, the wiring includes nickel plating 120C containing phosphorus on the wiring main portion 12A, palladium plating 120D, first gold plating 120E, Plating 12B in which the second gold plating 120F is laminated may be formed. Nickel plating 120C containing phosphorus, palladium plating 120D, 1st gold plating 120E, and 2nd gold plating 120F are laminated | stacked, for example, copper of wiring main part 12A. In the case of using, the diffusion of copper into the plating 12B can be suppressed. Thereby, the fall of adhesiveness of each layer of plating can be suppressed. Nickel plating (120C) containing phosphorus, palladium plating (120D), and first gold plating (120E) were formed on the wiring main portion (12A) by electroless plating, and electrolytic plating of the second gold plating (120F) was performed. You may form by a plating method. Since the 2nd gold plating 120F formed by the electroplating method is located in the outermost surface, the hardening defect of the addition reaction type silicone resin using a platinum type catalyst can be suppressed.

Hereinafter, each component in the light emitting device which concerns on one Embodiment of this invention is demonstrated.

(Light emitting element 20)

The light emitting element 20 is a semiconductor element which emits light by applying a voltage, and an existing semiconductor element composed of a nitride semiconductor or the like can be applied. As the light emitting element 20, an LED chip is mentioned, for example. The light emitting element 20 includes at least the semiconductor laminate 23, and in many cases, further includes an element substrate 24. It is preferable that the shape as seen from the upper surface of the light emitting element is a rectangle, in particular a square shape or a rectangular shape long in one direction, but other shapes may be used. The side surface of the light emitting element may be perpendicular to the upper surface, or may be inclined inward or outward. In addition, the light emitting element has a positive electrode and a negative electrode. The positive / negative electrode may be composed of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or an alloy thereof. The peak emission wavelength of a light emitting element can be selected from an ultraviolet region to an infrared region by a semiconductor material or its mixing ratio. As the semiconductor material, it is preferable to use a nitride semiconductor which is a material capable of emitting light having a short wavelength capable of efficiently exciting wavelength converting particles. Nitride semiconductor is represented mainly by the general formula _{In x Al y Ga 1-x} -y N (0≤x, 0≤y, x + y≤1). The light emission peak wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, from the viewpoints of luminous efficiency, excitation of the wavelength conversion particles, and color mixing with the light emission thereof, and more preferably 450 More preferably, they are more than 475 nm. In addition, an InAlGaAs-based semiconductor, an InAlGaP-based semiconductor, zinc sulfide, zinc selenide, silicon carbide, or the like may be used. Although the element substrate of a light emitting element is a crystal growth substrate which can mainly grow the crystal | crystallization of the semiconductor which comprises a semiconductor laminated body, it may be a joining substrate joined to the semiconductor element structure isolate | separated from the crystal growth substrate. Since the element substrate is light-transmitting, flip chip mounting is easy to be adopted, and light extraction efficiency can be easily increased. Examples of the base material of the element substrate include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphorus, indium phosphorus, zinc sulfide, zinc oxide, zinc selenide, and diamond. Especially, sapphire is preferable. The thickness of an element substrate can be suitably selected, for example, 0.02 mm or more and 1 mm or less, It is preferable that they are 0.05 mm or more and 0.3 mm or less from a viewpoint of the intensity | strength of a device substrate and / or the thickness of a light emitting device.

(1st wavelength conversion member 31)

The first wavelength conversion member is a member provided on the light emitting element. The 1st wavelength conversion member contains the 1st base material and 1st wavelength conversion particle.

(First Wavelength Converting Particles 311)

The first wavelength converting particles absorb at least a portion of the primary light emitted by the light emitting element, and emit secondary light having a wavelength different from that of the primary light. The 1st wavelength conversion particle can be used individually by 1 type or in combination of 2 or more types in the specific examples shown below.

As 1st wavelength conversion particle | grains, well-known wavelength conversion particle | grains, such as a wavelength conversion particle which emits green light, a wavelength conversion particle which emits yellow light, and / or a wavelength conversion particle which emits red light, can be used. For example, green to the wavelength conversion particles emit light, the yttrium-aluminum-garnet fluorescent material (for example, _{Y 3 (Al, Ga) 5} O 12: Ce), lutetium-aluminum-garnet fluorescent material (e.g., Lu ₃ (Al, Ga) ₅ O ₁₂ : Ce), terbium-aluminum-garnet-based phosphors (e.g., Tv ₃ (AE, Baa) ₅ O ₁₂ : Ce), silicate-based phosphors (e.g. ₂ SiO _4: Eu), chloro-silicate-based fluorescent material (for example, _{Ca 8 Mg (SiO 4) 4} Cl 2: Eu), β sialon-based fluorescent material (e.g., _{Si 6-z Al z O z} N 8-z : Eu (0 <z <4.2 )), SGS -based fluorescent material (for example, SrGa ₂ s _4:. Eu) and the like can be given is a wavelength conversion particles of the yellow light, the α sialon-based fluorescent material (for example, g _{M z (Si, Al) 12} (O, N) 16 ( stage, 0 <z≤2 and, M is Li, Mg, Ca, Y, and lanthanide elements other than La and Ce), etc. In addition, among the wavelength converting particles for emitting green light, there are also wavelength converting particles for emitting yellow light, and for example, yttrium aluminum garnet. The fluorescent substance can shift the emission peak wavelength to the long wavelength side by substituting a part of Y for Gd, and yellow light emission is possible, and some of these wavelength conversion particles can emit orange light. examples of the nitrogen-containing alumino-silicate, calcium (CASN or SCASN) based fluorescent material (for example, _{(Sr, Ca) AlSiN 3:} Eu). , and the like in addition, manganese activated fluoride-based fluorescent material (general formula (I) a Phosphor represented by ₂ [M _{1 -a} Mn _a F ₆ ] (However, in the general formula (I), A is at least one member selected from the group consisting of K, Li, Na, Rb, Cs, and NH _4. ) Where M is a Group 4 element and a Group 14 element And at least one element selected from the group consisting of a, satisfies 0 &lt; a &lt; 0.2, etc. A representative example of the manganese-activated fluoride phosphor is a phosphor of manganese-activated potassium fluoride silicate (eg, For example, K ₂ SiF ₆ : Mn).

(The first base material 312)

The first base material 312 may be light-transmitting with respect to light emitted from the light emitting element. In addition, "transmittance" means that the light transmittance in the light emission peak wavelength of a light emitting element becomes like this. Preferably it is 60% or more, More preferably, it is 70% or more, More preferably, it is 80% or more. As a 1st base material, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or these modified resin can be used. It may be glass. Especially, silicone resin and modified silicone resin are preferable because they are excellent in heat resistance and light resistance. Dimethyl silicone resin, phenyl-methyl silicone resin, diphenyl silicone resin is mentioned as a specific silicone resin. In addition, in this specification, "modified resin" includes a hybrid resin.

The 1st base material may contain various diffused particles in the said resin or glass. Examples of the diffusion particles include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide and the like. The diffusing particles may be used alone or in combination of two or more of them. In particular, silicon oxide with a small thermal expansion coefficient is preferable. In addition, by using the nanoparticles as the diffusion particles, the scattering of light emitted from the light emitting element can be increased, and the amount of the wavelength conversion particles can be reduced.

(Light guide member 50)

A light guide member is a member which adhere | attaches a light emitting element and a translucent member, and guides the light from a light emitting element to a translucent member. As a base material of a light guide member, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or these modified resins are mentioned. Especially, silicone resin and modified silicone resin are preferable because they are excellent in heat resistance and light resistance. Dimethyl silicone resin, phenyl-methyl silicone resin, diphenyl silicone resin is mentioned as a specific silicone resin. In addition, the base material of a light guide member may contain diffused particles similarly to the 1st base material mentioned above.

(Reflective member)

From the viewpoint of the light extraction efficiency in the Z direction, the reflective member preferably has a light reflectance at the peak emission wavelength of the light emitting element of 70% or more, more preferably 80% or more, even more preferably 90% or more. Do. Moreover, it is preferable that a reflection member is white. Therefore, it is preferable that a reflection member contains a white pigment in a base material. The reflective member passes through a liquid state before curing. The reflective member can be formed by transfer molding, injection molding, compression molding, potting, or the like.

(Base material of reflective member)

Resin can be used for the base material of a reflection member, For example, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or these modified resins are mentioned. Especially, silicone resin and modified silicone resin are preferable because they are excellent in heat resistance and light resistance. Dimethyl silicone resin, phenyl-methyl silicone resin, diphenyl silicone resin is mentioned as a specific silicone resin.

(White pigment)

White pigment is titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, silicon oxide 1 A species can be used individually or in combination of 2 or more types. Although the shape of a white pigment can be selected suitably and may be indefinite shape or a crushed shape, spherical shape is preferable from a fluid viewpoint. Moreover, although the particle size of a white pigment is about 0.1 micrometer or more and about 0.5 micrometer or less, for example, in order to improve the effect of light reflection and a coating, it is so preferable that it is small. Although content of the white pigment in a reflecting member can be selected suitably, 10 wt% or more and 80 wt% or less are preferable from a viewpoint of light reflectivity and the viscosity at the time of liquid phase, for example, 20 wt% or more and 70 wt% or less are more preferable. More preferably, 30 wt% or more and 60 wt% or less are more preferable. In addition, "wt%" is a weight percentage and shows the ratio of the weight of the said material with respect to the total weight of a reflective member.

(2nd wavelength conversion member 32)

As the second wavelength conversion member, the same material as that of the first wavelength conversion member can be used.

(Cover member 33)

As a 2nd wavelength conversion member, the same material as a 1st base material can be used.

(Substrate (10))

The board | substrate 10 is a member which mounts a light emitting element. The board | substrate 10 is comprised by the base material 11, the 1st wiring 12, the 2nd wiring 13, the 3rd wiring 14, and the via 15. As shown in FIG.

(Base (11))

The base material 11 can be comprised using insulating members, such as resin or fiber reinforced resin, ceramics, and glass. Epoxy, glass epoxy, bismaleimide triazine (BT), polyimide, etc. are mentioned as resin or fiber reinforced resin. Examples of the ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, and mixtures thereof. It is preferable to use the base material which has a physical property near the linear expansion coefficient of a light emitting element especially among these base materials. Although the lower limit of the thickness of a base material can be selected suitably, it is preferable that it is 0.05 mm or more from a viewpoint of the strength of a base material, and it is more preferable that it is 0.2 mm or more. Moreover, it is preferable that it is 0.5 mm or less from a viewpoint of the thickness (length inward) of a light emitting device, and, as for the upper limit of the thickness of a base material, it is more preferable that it is 0.4 mm or less.

(1st wiring 12, 2nd wiring 13, 3rd wiring 14)

The first wiring is disposed in front of the substrate and electrically connected to the light emitting element. The second wiring is disposed on the back surface of the substrate and electrically connected to the first wiring through the via. The third wiring covers the inner wall of the recess and is electrically connected to the second wiring. The first wiring, the second wiring and the third wiring can be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy thereof. The single layer of these metals or alloys may be a multilayer. In particular, from the viewpoint of heat dissipation, copper or a copper alloy is preferable. Moreover, even if the surface layer of a 1st wiring and / or a 2nd wiring is provided with layers, such as silver, platinum, aluminum, rhodium, gold, or these alloys, from a viewpoint of the wettability and / or light reflectivity of a conductive adhesive member, etc. are provided. good.

(Empty (15))

The via 15 is a member provided in a hole penetrating the front and rear surfaces of the substrate 11 to electrically connect the first wiring and the second wiring. The via 15 may be constituted by the fourth wiring 151 covering the surface of the through hole of the substrate and the charging member 152 filled in the fourth wiring 151. As the fourth wiring 151, the same conductive member as the first wiring, the second wiring and the third wiring can be used. The charging member 152 may use a conductive member or may use an insulating member.

(Insulation film 18)

The insulating film 18 is a member for securing the insulation on the back surface and preventing short circuit. The insulating film may be formed of any of those used in the art. For example, a thermosetting resin, a thermoplastic resin, etc. are mentioned.

(Conductive Adhesive Member 60)

A conductive adhesive member is a member which electrically connects the electrode of a light emitting element and a 1st wiring. Examples of the conductive adhesive member include metal pastes such as bumps such as gold, silver, and copper, metal powders such as silver, gold, copper, platinum, aluminum, and palladium, and resin binders, tin-bismuth, tin-copper, and tin- Any one of solders such as silver, gold-tin, and brazing such as low melting point metal can be used.

The light-emitting device which concerns on one Embodiment of this invention is a backlight apparatus of a liquid crystal display, various lighting fixtures, a large display, various display apparatuses, such as an advertisement and a road guide, a projector apparatus, a digital video camera, a facsimile machine, a copier, a scanner, etc. In an image reading apparatus or the like.

1000, 1000A, 1000B, 1000C: light emitting device
10: Substrate
11: description
12: first wiring
13: second wiring
14: third wiring
15: Beer
151: fourth wiring
152: filling member
16: concave
18: insulating film
20: light emitting element
31: first wavelength conversion member
32: second wavelength conversion member
33: covering member
34: film
40: reflective member
50: light guide member
60: conductive adhesive member

Claims (8)

A light emitting element having a first surface and a second surface positioned opposite to the first surface;
A light guide member covering a side surface of the light emitting element;
A first wavelength conversion member covering the first surface and having a first base material and a first wavelength conversion particle;
A reflection member which covers a side surface of the light emitting element, a side surface of the light guide member, and a side surface of the first wavelength conversion member, and is in contact with the light emitting element,
The thickness of the said 1st wavelength conversion member is 60 micrometers or more and 120 micrometers or less,
The average particle diameter of the said 1st wavelength conversion particle is 4 micrometers or more and 12 micrometers or less,
The center particle diameter of the said 1st wavelength conversion particle is 4 micrometers or more and 12 micrometers or less,
The light-emitting device of which the said 1st wavelength conversion particle is 60 weight% or more and 75 weight% or less with respect to the total weight of a said 1st wavelength conversion member. The method of claim 1,
A light emitting device wherein the first wavelength converting particle is a manganese active fluoride phosphor. The method according to claim 1 or 2,
And a second wavelength conversion member positioned between the light emitting element and the first wavelength conversion member, the second wavelength conversion member including a second base material and second wavelength conversion particles. The method of claim 3,
The light emitting device of which the average particle diameter of the first wavelength conversion particle is smaller than the average particle diameter of the second wavelength conversion particle. The method according to claim 3 or 4,
The second light emitting device is a β sialon-based phosphor. The method according to any one of claims 3 to 5,
The thickness of a said 2nd wavelength conversion member is 20 micrometers or more and 60 micrometers or less. The method according to any one of claims 1 to 6,
The light-emitting device provided with the coating member which coat | covers the said 1st wavelength conversion member. The method according to any one of claims 1 to 7,
The light-emitting device whose standard deviation of the particle size distribution by the volume reference of the said 1st wavelength conversion member is 0.3 micrometer or less.

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