TWI809237B - 在非所要繞射級存在之情況下之散射測量模型化 - Google Patents
在非所要繞射級存在之情況下之散射測量模型化 Download PDFInfo
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- TWI809237B TWI809237B TW109100159A TW109100159A TWI809237B TW I809237 B TWI809237 B TW I809237B TW 109100159 A TW109100159 A TW 109100159A TW 109100159 A TW109100159 A TW 109100159A TW I809237 B TWI809237 B TW I809237B
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- scatterometry
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- weighting function
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Classifications
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/255—Details, e.g. use of specially adapted sources, lighting or optical systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
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- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
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- G—PHYSICS
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- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/12—Circuits of general importance; Signal processing
- G01N2201/126—Microprocessor processing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Data Mining & Analysis (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962794510P | 2019-01-18 | 2019-01-18 | |
| US62/794,510 | 2019-01-18 | ||
| US16/286,315 | 2019-02-26 | ||
| US16/286,315 US11422095B2 (en) | 2019-01-18 | 2019-02-26 | Scatterometry modeling in the presence of undesired diffraction orders |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202043699A TW202043699A (zh) | 2020-12-01 |
| TWI809237B true TWI809237B (zh) | 2023-07-21 |
Family
ID=71608839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109100159A TWI809237B (zh) | 2019-01-18 | 2020-01-03 | 在非所要繞射級存在之情況下之散射測量模型化 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11422095B2 (https=) |
| EP (1) | EP3891489B1 (https=) |
| JP (1) | JP7333406B2 (https=) |
| KR (1) | KR102546448B1 (https=) |
| CN (1) | CN113302473B (https=) |
| TW (1) | TWI809237B (https=) |
| WO (1) | WO2020150407A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202131240A (zh) | 2019-10-16 | 2021-08-16 | 美商Ｐｄｆ對策公司 | 藉由累積預測進行的機器學習變數選定及根本原因發現 |
| US20240085321A1 (en) * | 2022-09-09 | 2024-03-14 | Kla Corporation | Methods And Systems For Model-less, Scatterometry Based Measurements Of Semiconductor Structures |
| TWI898876B (zh) * | 2024-10-16 | 2025-09-21 | 國立臺灣大學 | 量測關鍵尺寸的光學量測系統與方法 |
Citations (7)
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|---|---|---|---|---|
| US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| US7933026B2 (en) * | 2006-02-02 | 2011-04-26 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
| CN104395996A (zh) * | 2012-05-08 | 2015-03-04 | 科磊股份有限公司 | 基于光谱敏感度及工艺变化的测量配方优化 |
| TW201801218A (zh) * | 2016-03-29 | 2018-01-01 | 克萊譚克公司 | 用於自動多區域偵測及模型化之系統及方法 |
| CN107741207A (zh) * | 2013-12-23 | 2018-02-27 | 科磊股份有限公司 | 多重图案化参数的测量 |
| TW201920939A (zh) * | 2017-09-06 | 2019-06-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | 度量衡方法及設備 |
| TW201932986A (zh) * | 2017-10-17 | 2019-08-16 | 荷蘭商Ａｓｍｌ荷蘭公司 | 散射計及使用聲頻輻射之散射測量方法 |
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| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| WO2002091248A1 (en) * | 2001-05-04 | 2002-11-14 | Therma-Wave, Inc. | Systems and methods for metrology recipe and model generation |
| US8773657B2 (en) * | 2004-02-23 | 2014-07-08 | Asml Netherlands B.V. | Method to determine the value of process parameters based on scatterometry data |
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| US7523021B2 (en) | 2006-03-08 | 2009-04-21 | Tokyo Electron Limited | Weighting function to enhance measured diffraction signals in optical metrology |
| US7505148B2 (en) | 2006-11-16 | 2009-03-17 | Tokyo Electron Limited | Matching optical metrology tools using spectra enhancement |
| US7630087B2 (en) | 2006-11-22 | 2009-12-08 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
| NL1036734A1 (nl) | 2008-04-09 | 2009-10-12 | Asml Netherlands Bv | A method of assessing a model, an inspection apparatus and a lithographic apparatus. |
| WO2014062972A1 (en) | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| US10769320B2 (en) | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
| US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
| US9857291B2 (en) | 2013-05-16 | 2018-01-02 | Kla-Tencor Corporation | Metrology system calibration refinement |
| KR102170119B1 (ko) | 2013-12-18 | 2020-10-27 | 에이에스엠엘 네델란즈 비.브이. | 검사 방법 및 장치, 및 리소그래피 장치 |
| US9494535B2 (en) * | 2014-04-21 | 2016-11-15 | Kla-Tencor Corporation | Scatterometry-based imaging and critical dimension metrology |
| CN105444666B (zh) * | 2014-05-29 | 2018-05-25 | 睿励科学仪器（上海）有限公司 | 用于光学关键尺寸测量的方法及装置 |
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| US10281263B2 (en) * | 2016-05-02 | 2019-05-07 | Kla-Tencor Corporation | Critical dimension measurements with gaseous adsorption |
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| US11380594B2 (en) * | 2017-11-15 | 2022-07-05 | Kla-Tencor Corporation | Automatic optimization of measurement accuracy through advanced machine learning techniques |
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-
2019
- 2019-02-26 US US16/286,315 patent/US11422095B2/en active Active
-
2020
- 2020-01-03 TW TW109100159A patent/TWI809237B/zh active
- 2020-01-16 KR KR1020217026071A patent/KR102546448B1/ko active Active
- 2020-01-16 CN CN202080009572.XA patent/CN113302473B/zh active Active
- 2020-01-16 WO PCT/US2020/013768 patent/WO2020150407A1/en not_active Ceased
- 2020-01-16 JP JP2021541463A patent/JP7333406B2/ja active Active
- 2020-01-16 EP EP20742031.6A patent/EP3891489B1/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| US7933026B2 (en) * | 2006-02-02 | 2011-04-26 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
| CN104395996A (zh) * | 2012-05-08 | 2015-03-04 | 科磊股份有限公司 | 基于光谱敏感度及工艺变化的测量配方优化 |
| CN107741207A (zh) * | 2013-12-23 | 2018-02-27 | 科磊股份有限公司 | 多重图案化参数的测量 |
| TW201801218A (zh) * | 2016-03-29 | 2018-01-01 | 克萊譚克公司 | 用於自動多區域偵測及模型化之系統及方法 |
| TW201920939A (zh) * | 2017-09-06 | 2019-06-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | 度量衡方法及設備 |
| TW201932986A (zh) * | 2017-10-17 | 2019-08-16 | 荷蘭商Ａｓｍｌ荷蘭公司 | 散射計及使用聲頻輻射之散射測量方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022518225A (ja) | 2022-03-14 |
| JP7333406B2 (ja) | 2023-08-24 |
| WO2020150407A1 (en) | 2020-07-23 |
| TW202043699A (zh) | 2020-12-01 |
| KR20210106017A (ko) | 2021-08-27 |
| EP3891489A1 (en) | 2021-10-13 |
| US11422095B2 (en) | 2022-08-23 |
| EP3891489A4 (en) | 2022-10-05 |
| CN113302473A (zh) | 2021-08-24 |
| EP3891489B1 (en) | 2024-03-06 |
| KR102546448B1 (ko) | 2023-06-21 |
| US20200232909A1 (en) | 2020-07-23 |
| CN113302473B (zh) | 2025-02-25 |
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