CN113302473B - 用于散射测量建模的方法及系统 - Google Patents

用于散射测量建模的方法及系统 Download PDF

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Publication number
CN113302473B
CN113302473B CN202080009572.XA CN202080009572A CN113302473B CN 113302473 B CN113302473 B CN 113302473B CN 202080009572 A CN202080009572 A CN 202080009572A CN 113302473 B CN113302473 B CN 113302473B
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China
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scatterometry
targets
intensity
reference targets
test
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Chinese (zh)
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CN113302473A (zh
Inventor
P·R·阿金斯
列-关·里奇·利
S·克里许南
D·W-C·吴
E·邱
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/255—Details, e.g. use of specially adapted sources, lighting or optical systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/121—Correction signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/126—Microprocessor processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN202080009572.XA 2019-01-18 2020-01-16 用于散射测量建模的方法及系统 Active CN113302473B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962794510P 2019-01-18 2019-01-18
US62/794,510 2019-01-18
US16/286,315 2019-02-26
US16/286,315 US11422095B2 (en) 2019-01-18 2019-02-26 Scatterometry modeling in the presence of undesired diffraction orders
PCT/US2020/013768 WO2020150407A1 (en) 2019-01-18 2020-01-16 Scatterometry modeling in the presence of undesired diffraction orders

Publications (2)

Publication Number Publication Date
CN113302473A CN113302473A (zh) 2021-08-24
CN113302473B true CN113302473B (zh) 2025-02-25

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CN202080009572.XA Active CN113302473B (zh) 2019-01-18 2020-01-16 用于散射测量建模的方法及系统

Country Status (7)

Country Link
US (1) US11422095B2 (https=)
EP (1) EP3891489B1 (https=)
JP (1) JP7333406B2 (https=)
KR (1) KR102546448B1 (https=)
CN (1) CN113302473B (https=)
TW (1) TWI809237B (https=)
WO (1) WO2020150407A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202131240A (zh) 2019-10-16 2021-08-16 美商Ｐｄｆ對策公司 藉由累積預測進行的機器學習變數選定及根本原因發現
US20240085321A1 (en) * 2022-09-09 2024-03-14 Kla Corporation Methods And Systems For Model-less, Scatterometry Based Measurements Of Semiconductor Structures
TWI898876B (zh) * 2024-10-16 2025-09-21 國立臺灣大學 量測關鍵尺寸的光學量測系統與方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
WO2002091248A1 (en) * 2001-05-04 2002-11-14 Therma-Wave, Inc. Systems and methods for metrology recipe and model generation
US8773657B2 (en) * 2004-02-23 2014-07-08 Asml Netherlands B.V. Method to determine the value of process parameters based on scatterometry data
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US7523021B2 (en) 2006-03-08 2009-04-21 Tokyo Electron Limited Weighting function to enhance measured diffraction signals in optical metrology
US7505148B2 (en) 2006-11-16 2009-03-17 Tokyo Electron Limited Matching optical metrology tools using spectra enhancement
US7630087B2 (en) 2006-11-22 2009-12-08 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
NL1036734A1 (nl) 2008-04-09 2009-10-12 Asml Netherlands Bv A method of assessing a model, an inspection apparatus and a lithographic apparatus.
US10354929B2 (en) * 2012-05-08 2019-07-16 Kla-Tencor Corporation Measurement recipe optimization based on spectral sensitivity and process variation
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US9857291B2 (en) 2013-05-16 2018-01-02 Kla-Tencor Corporation Metrology system calibration refinement
KR102170119B1 (ko) 2013-12-18 2020-10-27 에이에스엠엘 네델란즈 비.브이. 검사 방법 및 장치, 및 리소그래피 장치
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
US9494535B2 (en) * 2014-04-21 2016-11-15 Kla-Tencor Corporation Scatterometry-based imaging and critical dimension metrology
CN105444666B (zh) * 2014-05-29 2018-05-25 睿励科学仪器（上海）有限公司 用于光学关键尺寸测量的方法及装置
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
US10502692B2 (en) * 2015-07-24 2019-12-10 Kla-Tencor Corporation Automated metrology system selection
US10340165B2 (en) * 2016-03-29 2019-07-02 Kla-Tencor Corporation Systems and methods for automated multi-zone detection and modeling
US10451412B2 (en) * 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
US10281263B2 (en) * 2016-05-02 2019-05-07 Kla-Tencor Corporation Critical dimension measurements with gaseous adsorption
US10041873B2 (en) * 2016-05-02 2018-08-07 Kla-Tencor Corporation Porosity measurement of semiconductor structures
EP3318927A1 (en) 2016-11-04 2018-05-09 ASML Netherlands B.V. Method and apparatus for measuring a parameter of a lithographic process, computer program products for implementing such methods & apparatus
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
EP3454123A1 (en) * 2017-09-06 2019-03-13 ASML Netherlands B.V. Metrology method and apparatus
EP3474074A1 (en) * 2017-10-17 2019-04-24 ASML Netherlands B.V. Scatterometer and method of scatterometry using acoustic radiation
US11380594B2 (en) * 2017-11-15 2022-07-05 Kla-Tencor Corporation Automatic optimization of measurement accuracy through advanced machine learning techniques
US11156548B2 (en) * 2017-12-08 2021-10-26 Kla-Tencor Corporation Measurement methodology of advanced nanostructures
US11067389B2 (en) * 2018-03-13 2021-07-20 Kla Corporation Overlay metrology system and method
KR102669151B1 (ko) * 2018-10-08 2024-05-27 삼성전자주식회사 조합된 모델 함수를 산출하는 방법, 리소그래피 장치 세팅 방법, 리소그래피 방법, 리소그래피 장치

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Publication number Publication date
JP2022518225A (ja) 2022-03-14
JP7333406B2 (ja) 2023-08-24
WO2020150407A1 (en) 2020-07-23
TWI809237B (zh) 2023-07-21
TW202043699A (zh) 2020-12-01
KR20210106017A (ko) 2021-08-27
EP3891489A1 (en) 2021-10-13
US11422095B2 (en) 2022-08-23
EP3891489A4 (en) 2022-10-05
CN113302473A (zh) 2021-08-24
EP3891489B1 (en) 2024-03-06
KR102546448B1 (ko) 2023-06-21
US20200232909A1 (en) 2020-07-23

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