TWI805762B - 感光性樹脂組成物、圖型形成方法及光半導體元件之製造方法 - Google Patents
感光性樹脂組成物、圖型形成方法及光半導體元件之製造方法 Download PDFInfo
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- TWI805762B TWI805762B TW108117048A TW108117048A TWI805762B TW I805762 B TWI805762 B TW I805762B TW 108117048 A TW108117048 A TW 108117048A TW 108117048 A TW108117048 A TW 108117048A TW I805762 B TWI805762 B TW I805762B
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- WUPCFMITFBVJMS-UHFFFAOYSA-N tetrakis(1,2,2,6,6-pentamethylpiperidin-4-yl) butane-1,2,3,4-tetracarboxylate Chemical compound C1C(C)(C)N(C)C(C)(C)CC1OC(=O)CC(C(=O)OC1CC(C)(C)N(C)C(C)(C)C1)C(C(=O)OC1CC(C)(C)N(C)C(C)(C)C1)CC(=O)OC1CC(C)(C)N(C)C(C)(C)C1 WUPCFMITFBVJMS-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 125000002088 tosyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])S(*)(=O)=O 0.000 description 1
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
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Abstract
提供一種感光性樹脂組成物,其能夠以寬波長範圍來形成微細的圖型之同時、於圖型形成後能夠賦予高透明性、高耐光性且高耐熱性的皮膜,以及提供使用該感光性樹脂組成物的圖型形成方法及光半導體元件之製造方法。
本發明的感光性樹脂組成物,其包含:(A)乙烯基醚化合物、(B)含環氧基的聚矽氧樹脂及(C)光酸產生劑。
Description
本發明為關於感光性樹脂組成物、圖型形成方法及光半導體元件之製造方法。
至今為止,以發光二極體(LED)、CMOS影像感測器等為代表的各種光學裝置中,主要為使用環氧樹脂來作為密封保護材料。其中,作為具有高透明性與耐光性者,已有多數使用著環氧改質聚矽氧樹脂,亦存在著將脂環式環氧基導入至矽伸苯基(silphenylene)骨架中之類型(專利文獻1)。但是,該等材料並不能進行10μm左右的微細加工。
近年來,必須進行微細加工的各種光學裝置亦變多。進行如此般的微細加工時,已使用著以環氧樹脂系材料為代表的各種阻劑材料,但在耐光性方面,即使以往的裝置之情形時為無問題,由於近年來以LED為首的光學裝置的高輸出化的進展,該等材料的耐光性並不充分,而具有釋氣(outgas)、變色等的問題。亦存在著將兩末端脂環式環氧改質矽伸苯基作為交聯劑來進行導入之類型(專利文獻2),但對於目標的更高透明性之情形時,耐熱性、耐光性則無法稱為充分,而期望著能夠承受更嚴苛條件的組成物。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特公平8-32763號公報
[專利文獻2]日本特開2012-001668號公報
[發明所欲解決之課題]
本發明為有鑑於前述情事所完成之發明,本發明的目的為提供一種感光性樹脂組成物,其能夠以寬波長範圍來形成微細的圖型之同時、於圖型形成後能夠賦予高透明性、高耐光性且高耐熱性的皮膜,以及提供使用該感光性樹脂組成物的圖型形成方法及光半導體元件之製造方法。
[解決課題之手段]
本發明人為了達成前述目的經重複深入研究之結果發現,一種包含乙烯基醚化合物及含環氧基的聚矽氧樹脂而成的感光性樹脂組成物,可容易形成皮膜,且該皮膜的透明性及耐光性為優異,進而具有微細加工亦為優異的性能,因此在使用於光半導體元件之際,於保護或密封用途之方面為優異,而完成了本發明。
因此,本發明為提供下述的感光性樹脂組成物、圖型形成方法及光半導體元件之製造方法。
1. 一種感光性樹脂組成物,其包含:
(A)乙烯基醚化合物、
(B)含環氧基的聚矽氧樹脂及
(C)光酸產生劑。
2. 如前述1之感光性樹脂組成物,其中,(A)乙烯基醚化合物的分子量為50~500。
3. 如前述1或2之感光性樹脂組成物,其中,(B)含環氧基的聚矽氧樹脂包含以下述式(B1)~(B6)表示的重複單位,
[式中,R11
~R14
分別獨立為可包含雜原子的碳數1~20的一價烴基,m分別獨立為1~600的整數,若m為2以上的整數時,各R13
可互為相同或相異,各R14
可互為相同或相異,a、b、c、d、e及f為滿足0≦a≦1、0≦b≦1、0≦c≦1、0≦d≦1、0≦e≦1、0≦f≦1、0<c+d+e+f≦1、及a+b+c+d+e+f=1的正數,X1
為以下述式(X1)表示的二價基,X2
為以下述式(X2)表示的二價基,X3
為以下述式(X3)表示的二價基,
(式中,R21
~R24
分別獨立為可包含雜原子的碳數1~20的一價烴基,p為1~600的整數,若p為2以上的整數時,各R23
可互為相同或相異,各R24
可互為相同或相異,R25
分別獨立為氫原子或甲基,x分別獨立為0~7的整數)
(式中,Y1
為單鍵、亞甲基、丙烷-2,2-二基、1,1,1,3,3,3-六氟丙烷-2,2-二基或芴-9,9-二基,R31
及R32
分別獨立為碳數1~4的烷基或烷氧基,若g為2時,各R31
可互為相同或相異,若h為2時,各R32
可互為相同或相異,R33
分別獨立為氫原子或甲基,y分別獨立為0~7的整數,g及h分別獨立為0、1或2)
(式中,R41
分別獨立為氫原子或甲基,z分別獨立為0~7的整數,R42
為可包含酯鍵或醚鍵的碳數1~8的一價烴基或以下述式(X3-1)表示的基,
(式中,R43
為可包含酯鍵或醚鍵的碳數1~8的二價烴基))]。
4. 如前述3之感光性樹脂組成物,其中,0<e+f≦1。
5. 如前述1~4中任一項之感光性樹脂組成物,其中,相對於(B)成分100質量份,(A)成分的含量為1~1,000質量份。
6. 如前述1~5中任一項之感光性樹脂組成物,其中,相對於(A)成分與(B)成分的合計100質量份,(C)成分的含量為0.05~20質量份。
7. 如前述1~6中任一項之感光性樹脂組成物,其中,進一步包含(D)溶劑。
8. 如前述1~7中任一項之感光性樹脂組成物,其中,進一步包含(E)抗氧化劑。
9. 一種圖型形成方法,其包含下述之步驟:
(i)將前述1~8中任一項之感光性樹脂組成物塗佈於基板上,於該基板上形成感光性樹脂皮膜之步驟;
(ii)隔著光罩來將前述感光性樹脂皮膜進行曝光之步驟;及
(iii)使用顯影液來將前述經曝光的感光性樹脂皮膜進行顯影之步驟。
10. 一種備有形成圖型的感光性樹脂皮膜的光半導體元件之製造方法,其包含前述9之圖型形成方法。
[發明的效果]
藉由使用包含乙烯基醚化合物及含環氧基的聚矽氧樹脂而成的本發明的感光性樹脂組成物,不會受到氧抑制作用(oxygen inhibition),而能夠容易形成皮膜,且由於該皮膜能夠以寬波長範圍的光來進行曝光,故可形成微細的圖型。進而,由本發明的組成物得到的皮膜,透明性、耐光性及耐熱性亦為優異,能夠適合使用於光半導體元件等的保護、密封用途。
[實施發明之最佳形態]
本發明的感光性樹脂組成物,其包含:(A)乙烯基醚化合物、(B)含環氧基的聚矽氧樹脂及(C)光酸產生劑。
[(A)乙烯基醚化合物]
乙烯基醚化合物為於分子中具有至少1個鍵結於氧原子的乙烯基而成的化合物。作為如此般的化合物,可使用周知的化合物,但以碳數3~35者為佳,較佳為例如以下所示例的單官能或多官能乙烯基醚。該等之中,較佳為分子量50~500者。
作為單官能乙烯基醚,可舉例如甲基乙烯基醚、乙基乙烯基醚、丙基乙烯基醚、n-丁基乙烯基醚、tert-丁基乙烯基醚、2-乙基己基乙烯基醚、n-壬基乙烯基醚、月桂基乙烯基醚、環己基乙烯基醚、環己基甲基乙烯基醚、4-甲基環己基甲基乙烯基醚、苄基乙烯基醚、二環戊烯基乙烯基醚、2-二環戊烯基氧基乙基乙烯基醚、甲氧基乙基乙烯基醚、乙氧基乙基乙烯基醚、丁氧基乙基乙烯基醚、甲氧基乙氧基乙基乙烯基醚、乙氧基乙氧基乙基乙烯基醚、甲氧基聚乙二醇乙烯基醚、四氫呋喃甲基乙烯基醚、2-羥基乙基乙烯基醚、2-羥基丙基乙烯基醚、4-羥基丁基乙烯基醚、4-羥基甲基環己基甲基乙烯基醚、二乙二醇單乙烯基醚、聚乙二醇乙烯基醚、氯基乙基乙烯基醚、氯基丁基乙烯基醚、氯基乙氧基乙基乙烯基醚、苯基乙基乙烯基醚、苯氧基聚乙二醇乙烯基醚、乙基氧雜環丁烷(oxetane)甲基乙烯基醚、二環戊二烯乙烯基醚、環己烷二甲醇乙烯基縮水甘油醚、三環癸烷乙烯基醚、丙烯酸2-(乙烯基氧基乙氧基)乙基、甲基丙烯酸2-(乙烯基氧基乙氧基)乙基、三環癸烷乙烯基醚等。
作為多官能乙烯基醚,可舉例如1,4-丁二醇二乙烯基醚、環己烷二甲醇二乙烯基醚、乙二醇二乙烯基醚、二乙二醇二乙烯基醚、三乙二醇二乙烯基醚、聚乙二醇二乙烯基醚、丙二醇二乙烯基醚、丁二醇二乙烯基醚、己二醇二乙烯基醚、雙酚A環氧烷烴二乙烯基醚、雙酚F環氧烷烴二乙烯基醚等的二乙烯基醚類;三羥甲基乙烷三乙烯基醚、三羥甲基丙烷三乙烯基醚、雙三羥甲基丙烷四乙烯基醚、甘油三乙烯基醚、季戊四醇(pentaerythritol)四乙烯基醚、二季戊四醇五乙烯基醚、二季戊四醇六乙烯基醚、環氧乙烷(EO)加成三羥甲基丙烷三乙烯基醚、環氧丙烷(PO)加成三羥甲基丙烷三乙烯基醚、EO加成雙三羥甲基丙烷四乙烯基醚、PO加成雙三羥甲基丙烷四乙烯基醚、EO加成季戊四醇四乙烯基醚、PO加成季戊四醇四乙烯基醚、EO加成二季戊四醇六乙烯基醚及PO加成二季戊四醇六乙烯基醚等。
該等的乙烯基醚之中,就取得性之觀點而言,較佳為二乙二醇二乙烯基醚、三乙二醇二乙烯基醚、1,4-丁二醇二乙烯基醚、環己烷二甲醇二乙烯基醚、乙基氧雜環丁烷甲基乙烯基醚、二環戊二烯乙烯基醚、三環癸烷乙烯基醚、苄基乙烯基醚;就高感度化或耐藥品性之觀點而言,又較佳為二乙二醇二乙烯基醚、三乙二醇二乙烯基醚、1,4-丁二醇二乙烯基醚、環己烷二甲醇二乙烯基醚、乙基氧雜環丁烷甲基乙烯基醚、二環戊二烯乙烯基醚。
本發明的感光性樹脂組成物中,(A)成分的含量,相對於(B)成分100質量份,較佳為1~1,000質量份,又較佳為1~400質量份,更佳為5~200質量份。只要是(A)成分的含量為前述範圍時,可得到良好的解析度及耐藥品性。(A)成分的乙烯基醚化合物可單獨使用1種,亦可合併2種以上來使用。
式(B2)、(B4)及(B6)中,R11
~R14
分別獨立為可包含雜原子的碳數1~20的一價烴基。m分別獨立為1~600的整數。若m為2以上的整數時,各R13
可互為相同或相異,各R14
可互為相同或相異。重複單位B2、B4及B6中,若矽氧烷單位為2以上時,各矽氧烷單位可全部為相同,或亦可包含2種以上的不同的矽氧烷單位。若包含2種以上的不同的矽氧烷單位時(即,m為2以上的整數時),矽氧烷單位可為無規鍵結者,亦可為交替鍵結者,或亦可為包含複數個相同的矽氧烷單位的嵌段。
前述一價烴基,可為直鏈狀、分支狀或環狀,作為其具體例可舉出碳數1~20的烷基、碳數2~20的烯基等的一價脂肪族烴基、碳數6~20的芳基、碳數7~20的芳烷基等的一價芳香族烴基。
作為前述烷基,可舉出甲基、乙基、n-丙基、異丙基、環丙基、n-丁基、異丁基、sec-丁基、tert-丁基、環丁基、n-戊基、環戊基、n-己基、環己基、n-庚基、n-辛基、n-壬基、n-癸基、降冰片基、金剛烷基等。作為前述烯基,可舉出乙烯基、丙烯基、丁烯基、戊烯基等。
又,前述一價脂肪族烴基中可包含雜原子,具體而言,前述一價脂肪族烴基的氫原子的一部分或全部可被氟原子、氯原子、溴原子、碘原子等的鹵素原子等所取代,在該碳原子間亦可隔著羰基、醚鍵、硫醚鍵等。作為如此般的包含雜原子的一價脂肪族烴基,可舉出2-氧代環己基(2-oxocyclohexyl)等。
作為前述芳基,可舉出苯基、2-甲基苯基、3-甲基苯基、4-甲基苯基、2-乙基苯基、3-乙基苯基、4-乙基苯基、4-tert-丁基苯基、4-丁基苯基、二甲基苯基、萘基、聯苯基、三聯苯基等。作為前述芳烷基,可舉出苄基、苯乙基(phenethyl)等。
又,前述一價芳香族烴基中可包含雜原子,具體而言,前述一價芳香族烴基的氫原子的一部分或全部可被碳數1~10的烷氧基、碳數1~10的烷硫基、碳數6~20的芳氧基、碳數6~20的芳硫基等所取代。
作為前述碳數1~10的烷氧基,可舉出甲氧基、乙氧基、n-丙氧基、異丙氧基、環丙氧基、n-丁氧基、異丁氧基、sec-丁氧基、tert-丁氧基、環丁氧基、n-戊氧基、環戊氧基、n-己氧基、環己氧基、n-庚氧基、n-辛氧基、n-壬氧基、n-癸氧基、降冰片氧基、金剛烷氧基等。
作為前述碳數1~10的烷硫基,可舉出甲硫基、乙硫基、n-丙硫基、異丙硫基、環丙硫基、n-丁硫基、異丁硫基、sec-丁硫基、tert-丁硫基、環丁硫基、n-戊硫基、環戊硫基、n-己硫基、環己硫基、n-庚硫基、n-辛硫基、n-壬硫基、n-癸硫基、降冰片硫基、金剛烷硫基等。
作為前述碳數6~20的芳氧基,可舉出苯氧基、2-甲基苯氧基、3-甲基苯氧基、4-甲基苯氧基、2-乙基苯氧基、3-乙基苯氧基、4-乙基苯氧基、4-tert-丁基苯氧基、4-丁基苯氧基、二甲基苯氧基、萘氧基、聯苯基氧基、三聯苯基氧基等。
作為前述碳數6~20的芳硫基,可舉出苯硫基、2-甲基苯硫基、3-甲基苯硫基、4-甲基苯硫基、2-乙基苯硫基、3-乙基苯硫基、4-乙基苯硫基、4-tert-丁基苯硫基、4-丁基苯硫基、二甲基苯硫基、萘硫基、聯苯基硫基、三聯苯基硫基等。
例如,作為以該等基所取代的芳基,可舉出2-甲氧基苯基、3-甲氧基苯基、4-甲氧基苯基、2-乙氧基苯基、3-乙氧基苯基、4-乙氧基苯基、3-tert-丁氧基苯基、4-tert-丁氧基苯基、聯苯基氧基苯基、聯苯基硫基苯基等。
前述一價脂肪族烴基的碳數較佳為1~10,又較佳為1~8。又,前述一價芳香族烴基的碳數較佳為1~14,又較佳為1~10。
該等之中,作為R11
~R14
較佳為甲基、乙基、n-丙基或苯基,又較佳為甲基或苯基。
式(B2)、(B4)及(B6)中,m分別獨立為1~600的整數,但較佳為1~300,又較佳為1~100。
式(B1)~(B6)中,a、b、c、d、e及f為滿足0≦a≦1、0≦b≦1、0≦c≦1、0≦d≦1、0≦e≦1、0≦f≦1、0<c+d+e+f≦1、及a+b+c+d+e+f=1的正數。較佳為滿足0.2≦a+c+e≦0.95、0.05≦b+d+f≦0.8、0≦a+b≦0.9、0≦c+d≦0.7、0<e+f≦1之數,更佳為滿足0.3≦a+c+e≦0.9、0.1≦b+d+f≦0.7、0≦a+b≦0.6、0≦c+d≦0.4、0.4≦e+f≦1之數。
式(X1)中,R21
~R24
分別獨立為可包含雜原子的碳數1~20的一價烴基。p為1~600的整數。若p為2以上的整數時,各R23
可互為相同或相異,各R24
可互為相同或相異。R25
分別獨立為氫原子或甲基。x分別獨立為0~7的整數。在以式(X1)表示的基之中,若矽氧烷單位為2以上時,各矽氧烷單位可全部為相同,或亦可包含2種以上的不同的矽氧烷單位。若包含2種以上的不同的矽氧烷單位時(即,p為2以上的整數時),矽氧烷單位可為無規鍵結者,亦可為交替鍵結者,或亦可為包含複數個相同的矽氧烷單位的嵌段。
前述可包含雜原子的一價烴基,可為直鏈狀、分支狀或環狀,作為其具體例,可舉出與R11
~R14
的前述說明中為相同者。該等之中,作為R21
~R24
較佳為甲基、乙基、n-丙基、苯基等,又較佳為甲基或苯基。
式(X2)中,Y1
為單鍵、亞甲基、丙烷-2,2-二基、1,1,1,3,3,3-六氟丙烷-2,2-二基或芴-9,9-二基。R31
及R32
分別獨立為碳數1~4的烷基或烷氧基,若g為2時,各R31
可互為相同或相異,若h為2時,各R32
可互為相同或相異。R33
分別獨立為氫原子或甲基。y分別獨立為0~7的整數。g及h分別獨立為0、1或2。
式(X3)中,R41
分別獨立為氫原子或甲基。z分別獨立為0~7的整數。
作為前述一價烴基,可為直鏈狀、分支狀或環狀,作為其具體例,可舉出甲基、乙基、n-丙基等的烷基、苯基等的芳基。該等之中,作為R42
較佳為甲基、苯基,又較佳為甲基。又,前述一價烴基的碳原子間,可隔著酯鍵或醚鍵。
式(X3-1)中,R43
為可包含酯鍵或醚鍵的碳數1~8的二價烴基。前述二價烴基,可為直鏈狀、分支狀或環狀,作為其具體例,可舉出亞甲基、伸乙基、丙烷-1,2-二基、丙烷-1,3-二基、丁烷-1,2-二基、丁烷-1,3-二基、丁烷-1,4-二基等的烷二基等。該等之中,作為R43
較佳為亞甲基、伸乙基,又較佳為亞甲基。又,前述二價烴基的碳原子間,可隔著酯鍵或醚鍵。
重複單位B1~B6可為無規鍵結,亦可作為嵌段聚合物而來鍵結。又,前述含環氧基的聚矽氧樹脂中,聚矽氧(矽氧烷單位)含有率較佳為30~80質量%。
前述含環氧基的聚矽氧樹脂的重量平均分子量(Mw)較佳為3,000~500,000,又較佳為5,000~200,000。尚,本發明中的Mw為使用四氫呋喃作為溶出溶劑,並藉由凝膠滲透色譜法(GPC)而得到的聚苯乙烯換算測定值。
(B)成分可例如藉由下述之反應來進行製造:將必須量的對應於(B)成分中的各部分的乙烯基含有化合物、與含氫矽烷基(hydrosilyl)的有機矽化合物進行混合,依據常法來進行氫化矽烷化反應而可製造。
(B)成分的含環氧基的聚矽氧樹脂可單獨使用1種,亦可合併2種以上來使用。
[(C)光酸產生劑]
作為(C)成分的光酸產生劑,只要是藉由光照射而可分解並產生酸者即可,未特別限定,但以藉由照射波長190~500nm的光而可產生酸的光酸產生劑為佳。(C)光酸產生劑係能使用作為硬化觸媒。作為前述光酸產生劑,可舉例如鎓鹽、重氮甲烷衍生物、乙二肟衍生物、β-酮碸衍生物、二碸衍生物、硝基苄基磺酸酯衍生物、磺酸酯衍生物、亞胺-基-磺酸酯衍生物、肟磺酸酯衍生物、亞胺基磺酸酯衍生物、三嗪衍生物等。
式(C1)及(C2)中,R101
~R105
分別獨立為可具有取代基的碳數1~12的烷基、可具有取代基的碳數6~12的芳基或可具有取代基的碳數7~12的芳烷基。A-
為非親核性相對離子(non-nucleophilic counter ion)。
作為前述烷基,可為直鏈狀、分支狀或環狀,可舉例如甲基、乙基、n-丙基、異丙基、環丙基、n-丁基、異丁基、sec-丁基、tert-丁基、環丁基、n-戊基、環戊基、環己基、降冰片基、金剛烷基等。作為前述芳基,可舉出苯基、萘基、聯苯基等。作為前述芳烷基,可舉出苄基、苯乙基等。
作為前述取代基,可舉出氧代基、直鏈狀、分支狀或環狀的碳數1~12的烷氧基、直鏈狀、分支狀或環狀的碳數1~12的烷基、碳數6~24的芳基、碳數7~25的芳烷基、碳數6~24的芳氧基、碳數6~24的芳硫基等。
作為R101
~R105
,較佳為甲基、乙基、丙基、丁基、環己基、降冰片基、金剛烷基、2-氧代環己基等的可具有取代基的烷基;苯基、萘基、聯苯基、o-、m-或p-甲氧基苯基、乙氧基苯基、m-或p-tert-丁氧基苯基、2-、3-或4-甲基苯基、乙基苯基、4-tert-丁基苯基、4-丁基苯基、二甲基苯基、三聯苯基、聯苯基氧基苯基、聯苯基硫基苯基等的可具有取代基的芳基;苄基、苯乙基等的可具有取代基的芳烷基。該等之中,又較佳為可具有取代基的芳基、可具有取代基的芳烷基。
作為前述非親核性相對離子,可舉出氯化物離子、溴化物離子等的鹵化物離子;三氟甲磺酸鹽離子、1,1,1-三氟乙磺酸鹽離子、九氟丁磺酸鹽離子等的氟烷烴磺酸鹽離子;甲苯磺酸鹽離子、苯磺酸鹽離子、4-氟苯磺酸鹽離子、1,2,3,4,5-五氟苯磺酸鹽離子等的芳基磺酸鹽離子;甲磺酸鹽離子、丁磺酸鹽離子等的烷烴磺酸鹽離子;三氟甲磺醯亞胺離子等的氟烷烴磺醯亞胺離子;參(三氟甲磺醯基)甲基化物離子等的氟烷烴磺醯基甲基化物離子;肆苯基硼酸鹽離子、肆(五氟苯基)硼酸鹽離子等的硼酸鹽離子等。
式(C3)中,R111
及R112
分別獨立為碳數1~12的烷基或鹵素化烷基、可具有取代基的碳數6~12的芳基、或碳數7~12的芳烷基。
作為前述烷基,可為直鏈狀、分支狀或環狀,作為其具體例,可舉出與R101
~R105
的說明中所示例的為相同者。作為前述鹵素化烷基,可舉出三氟甲基、1,1,1-三氟乙基、1,1,1-三氯乙基、九氟丁基等。
作為前述可具有取代基的芳基,可舉出苯基;2-、3-或4-甲氧基苯基、2-、3-或4-乙氧基苯基、3-或4-tert-丁氧基苯基等的烷氧基苯基;2-、3-或4-甲基苯基、乙基苯基、4-tert-丁基苯基、4-丁基苯基、二甲基苯基等的烷基苯基;氟苯基、氯苯基、1,2,3,4,5-五氟苯基等的鹵素化芳基等。作為前述芳烷基,可舉出苄基、苯乙基等。
式(C4)中,R121
~R124
分別獨立為碳數1~12的烷基或鹵素化烷基、可具有取代基的碳數6~12的芳基、或碳數7~12的芳烷基。又,R123
及R124
可相互鍵結並與該等所鍵結的碳原子一起來形成環,若形成環時,R123
及R124
經鍵結所形成的基為碳數1~12的直鏈狀或分支狀的伸烷基。
作為前述烷基、鹵素化烷基、可具有取代基的芳基、及芳烷基,可舉出與作為R111
及R112
所示例的為相同者。作為前述直鏈狀或分支狀的伸烷基,可舉出亞甲基、伸乙基、伸丙基、伸丁基、伸己基等。
作為前述鎓鹽,具體而言可舉出二苯基碘鎓三氟甲磺酸鹽、(p-tert-丁氧基苯基)苯基碘鎓三氟甲磺酸鹽、二苯基碘鎓p-甲苯磺酸鹽、(p-tert-丁氧基苯基)苯基碘鎓p-甲苯磺酸鹽、三苯基鋶三氟甲磺酸鹽、(p-tert-丁氧基苯基)二苯基鋶三氟甲磺酸鹽、雙(p-tert-丁氧基苯基)苯基鋶三氟甲磺酸鹽、參(p-tert-丁氧基苯基)鋶三氟甲磺酸鹽、三苯基鋶p-甲苯磺酸鹽、(p-tert-丁氧基苯基)二苯基鋶p-甲苯磺酸鹽、雙(p-tert-丁氧基苯基)苯基鋶p-甲苯磺酸鹽、參(p-tert-丁氧基苯基)鋶p-甲苯磺酸鹽、三苯基鋶九氟丁磺酸鹽、三苯基鋶丁磺酸鹽、三甲基鋶三氟甲磺酸鹽、三甲基鋶p-甲苯磺酸鹽、環己基甲基(2-氧代環己基)鋶三氟甲磺酸鹽、環己基甲基(2-氧代環己基)鋶p-甲苯磺酸鹽、二甲基苯基鋶三氟甲磺酸鹽、二甲基苯基鋶p-甲苯磺酸鹽、二環己基苯基鋶三氟甲磺酸鹽、二環己基苯基鋶p-甲苯磺酸鹽、雙(4-tert-丁基苯基)碘鎓六氟磷酸鹽、二苯基(4-硫代苯氧基苯基)鋶六氟銻酸鹽、[4-(4-聯苯基硫基)苯基]-4-聯苯基苯基鋶參(三氟甲磺醯基)甲基化物、三苯基鋶肆(氟苯基)硼酸鹽、參[4-(4-乙醯基苯基)苯硫基]鋶肆(氟苯基)硼酸鹽、三苯基鋶肆(五氟苯基)硼酸鹽、參[4-(4-乙醯基苯基)苯硫基]鋶肆(五氟苯基)硼酸鹽等。
作為前述重氮甲烷衍生物,具體而言可舉出雙(苯磺醯基)重氮甲烷、雙(p-甲苯磺醯基)重氮甲烷、雙(二甲苯磺醯基)重氮甲烷、雙(環己基磺醯基)重氮甲烷、雙(環戊基磺醯基)重氮甲烷、雙(n-丁基磺醯基)重氮甲烷、雙(異丁基磺醯基)重氮甲烷、雙(sec-丁基磺醯基)重氮甲烷、雙(n-丙基磺醯基)重氮甲烷、雙(異丙基磺醯基)重氮甲烷、雙(tert-丁基磺醯基)重氮甲烷、雙(n-戊基磺醯基)重氮甲烷、雙(異戊基磺醯基)重氮甲烷、雙(sec-戊基磺醯基)重氮甲烷、雙(tert-戊基磺醯基)重氮甲烷、1-環己基磺醯基-1-(tert-丁基磺醯基)重氮甲烷、1-環己基磺醯基-1-(tert-戊基磺醯基)重氮甲烷、1-tert-戊基磺醯基-1-(tert-丁基磺醯基)重氮甲烷等。
作為前述乙二肟衍生物,具體而言可舉出雙-o-(p-甲苯磺醯基)-α-二甲基乙二肟、雙-o-(p-甲苯磺醯基)-α-二苯基乙二肟、雙-o-(p-甲苯磺醯基)-α-二環己基乙二肟、雙-o-(p-甲苯磺醯基)-2,3-戊二酮乙二肟、雙-(p-甲苯磺醯基)-2-甲基-3,4-戊二酮乙二肟、雙-o-(n-丁磺醯基)-α-二甲基乙二肟、雙-o-(n-丁磺醯基)-α-二苯基乙二肟、雙-o-(n-丁磺醯基)-α-二環己基乙二肟、雙-o-(n-丁磺醯基)-2,3-戊二酮乙二肟、雙-o-(n-丁磺醯基)-2-甲基-3,4-戊二酮乙二肟、雙-o-(甲磺醯基)-α-二甲基乙二肟、雙-o-(三氟甲磺醯基)-α-二甲基乙二肟、雙-o-(1,1,1-三氟乙磺醯基)-α-二甲基乙二肟、雙-o-(tert-丁磺醯基)-α-二甲基乙二肟、雙-o-(全氟辛磺醯基)-α-二甲基乙二肟、雙-o-(環己磺醯基)-α-二甲基乙二肟、雙-o-(苯磺醯基)-α-二甲基乙二肟、雙-o-(p-氟苯磺醯基)-α-二甲基乙二肟、雙-o-(p-tert-丁基苯磺醯基)-α-二甲基乙二肟、雙-o-(二甲苯磺醯基)-α-二甲基乙二肟、雙-o-(樟腦磺醯基)-α-二甲基乙二肟等。
作為前述β-酮碸衍生物,具體而言可舉出2-環己基羰基-2-(p-甲苯磺醯基)丙烷、2-異丙基羰基-2-(p-甲苯磺醯基)丙烷等。
作為前述二碸衍生物,具體而言可舉出二苯基二碸、二環己基二碸等。
作為前述硝基苄基磺酸酯衍生物,具體而言可舉出2,6-二硝基苄基p-甲苯磺酸酯、2,4-二硝基苄基p-甲苯磺酸酯等。
作為前述磺酸酯衍生物,具體而言可舉出1,2,3-參(甲磺醯氧基)苯、1,2,3-參(三氟甲磺醯氧基)苯、1,2,3-參(p-甲苯磺醯氧基)苯等。
作為前述亞胺-基-磺酸酯衍生物,具體而言可舉出鄰苯二甲亞胺-基-三氟甲磺酸酯、鄰苯二甲亞胺-基-甲苯磺酸酯、5-降冰片烯-2,3-二羧基亞胺-基-三氟甲磺酸酯、5-降冰片烯-2,3-二羧基亞胺-基-甲苯磺酸酯、5-降冰片烯-2,3-二羧基亞胺-基-n-丁磺酸酯、n-三氟甲磺醯氧基萘基醯亞胺等。
作為前述肟磺酸酯衍生物,具體而言可舉出α-(苯鋶氧基亞胺基)-4-甲基苯基乙腈等。
作為前述亞胺基磺酸酯衍生物,具體而言可舉出(5-(4-甲基苯基)磺醯氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈、(5-(4-(4-甲基苯基磺醯氧基)苯基磺醯氧基亞胺基)-5H-噻吩-2-亞基)-(2-甲基苯基)-乙腈等。
又,亦可適合使用2-甲基-2-[(4-甲基苯基)磺醯基]-1-[(4-甲硫基)苯基]-1-丙烷等。
作為(C)成分的光酸產生劑,特別是以前述鎓鹽為較佳,以前述鋶鹽為又較佳。
(C)成分的含量,相對於(A)成分與(B)成分的合計100質量份,較佳為0.05~20質量份,又較佳為0.1~5質量份。(C)成分的含量只要是前述範圍,可容易得到充分的光硬化性,又,可有效地防止因酸產生劑本身的光吸收而造成的厚膜時的硬化性的惡化。尚,為了得到作為本發明的特徵的透明性及耐光性,在不妨礙光硬化性之範圍內,具有光吸收性的(C)成分的光酸產生劑的調配量係以越少越好。(C)成分的光酸產生劑可單獨使用1種,亦可合併2種以上來使用。
[(D)溶劑]
本發明的感光性樹脂組成物,為了提升其塗佈性,亦可包含溶劑來作為(D)成分。作為(D)溶劑,只要是可溶解前述的(A)~(C)成分、及後述的(E)成分或其他的各種添加劑即可,未特別限定。
作為(D)溶劑,以有機溶劑為較佳,作為其具體例可舉出環己酮、環戊酮、甲基-2-n-戊基酮等的酮類;3-甲氧基丁醇、3-甲基-3-甲氧基丁醇、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇等的醇類;丙二醇單甲基醚、乙二醇單甲基醚、丙二醇單乙基醚、乙二醇單乙基醚、丙二醇二甲基醚、二乙二醇二甲基醚等的醚類;丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯、乳酸乙酯、丙酮酸乙酯、乙酸丁酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙酸tert-丁酯、丙酸tert-丁酯、丙二醇-單-tert-丁基醚乙酸酯、γ-丁內酯等的酯類等。該等溶劑可單獨使用1種,亦可混合2種以上來使用。
作為(D)溶劑,特別是以光酸產生劑的溶解性為優異的乳酸乙酯、環己酮、環戊酮、丙二醇單甲基醚乙酸酯、γ-丁內酯及該等的混合溶劑為較佳。
(D)成分的含量,就感光性樹脂組成物的相溶性及黏度之觀點而言,相對於(A)及(B)成分的合計100質量份,較佳為50~2,000質量份,又較佳為50~1,000質量份,更佳為50~100質量份。
[(E)抗氧化劑]
本發明的感光性樹脂組成物,亦可包含抗氧化劑來作為添加劑。藉由包含抗氧化劑,可提升耐熱性。作為前述抗氧化劑,可舉出受阻酚系化合物、受阻胺系化合物等。
作為前述受阻酚系化合物並未特別限定,但較佳為以下所舉出者。可舉例如1,3,5-三甲基-2,4,6-參(3,5-二-tert-丁基-4-羥基苄基)苯(商品名:IRGANOX 1330)、2,6-二-tert-丁基-4-甲基苯酚(商品名:Sumilizer BHT)、2,5-二-tert-丁基-對苯二酚(商品名:Nocrac NS-7)、2,6-二-tert-丁基-4-乙基苯酚(商品名:Nocrac M-17)、2,5-二-tert-戊基對苯二酚(商品名:Nocrac DAH)、2,2’-亞甲基雙(4-甲基-6-tert-丁基苯酚)(商品名:Nocrac NS-6)、3,5-二-tert-丁基-4-羥基-苄基膦酸-二乙基酯(商品名:IRGANOX 1222)、4,4’-硫代雙(3-甲基-6-tert-丁基苯酚)(商品名:Nocrac 300)、2,2’-亞甲基雙(4-乙基-6-tert-丁基苯酚)(商品名:Nocrac NS-5)、4,4’-亞丁基雙(3-甲基-6-tert-丁基苯酚)(商品名:AdekaStab AO-40)、2-tert-丁基-6-(3-tert-丁基-2-羥基-5-甲基苄基)-4-甲基苯基丙烯酸酯(商品名:Sumilizer GM)、2-[1-(2-羥基-3,5-二-tert-戊基苯基)乙基]-4,6-二-tert-戊基苯基丙烯酸酯(商品名:Sumilizer GS)、2,2’-亞甲基雙[4-甲基-6-(α-甲基-環己基)苯酚]、4,4’-亞甲基雙(2,6-二-tert-丁基苯酚)(商品名:Seenox 226M)、4,6-雙(辛基硫代甲基)-o-甲酚(商品名:IRGANOX 1520L)、2,2’-伸乙基雙(4,6-二-tert-丁基苯酚)、十八烷基-3-(3,5-二-tert-丁基-4-羥基苯基)丙酸酯(商品名:IRGANOX 1076)、1,1,3-參-(2-甲基-4-羥基-5-tert-丁基苯基)丁烷(商品名:AdekaStab AO-30)、肆[亞甲基-(3,5-二-tert-丁基-4-羥基氫化肉桂酸酯)]甲烷(商品名:AdekaStab AO-60)、三乙二醇雙[3-(3-tert-丁基-5-甲基-4-羥基苯基)丙酸酯](商品名:IRGANOX 245)、2,4-雙-(n-辛基硫基)-6-(4-羥基-3,5-二-tert-丁基苯胺基)-1,3,5-三嗪(商品名:IRGANOX 565)、N,N’-六亞甲基雙(3,5-二-tert-丁基-4-羥基-氫化肉桂醯胺)(商品名:IRGANOX 1098)、1,6-己二醇-雙[3-(3,5-二-tert-丁基-4-羥基苯基)丙酸酯](商品名:IRGANOX 259)、2,2-硫代-二伸乙基雙[3-(3,5-二-tert-丁基-4-羥基苯基)丙酸酯](商品名:IRGANOX 1035)、3,9-雙[2-[3-(3-tert-丁基-4-羥基-5-甲基苯基)丙醯氧基]1,1-二甲基乙基]2,4,8,10-四氧雜螺[5.5]十一烷(商品名:Sumilizer GA-80)、參-(3,5-二-tert-丁基-4-羥基苄基)異氰脲酸酯(商品名:IRGANOX 3114)、雙(3,5-二-tert-丁基-4-羥基苄基膦酸乙酯)鈣/聚乙烯蠟混合物(50:50)(商品名:IRGANOX 1425WL)、異辛基-3-(3,5-二-tert-丁基-4-羥基苯基)丙酸酯(商品名:IRGANOX 1135)、4,4’-硫代雙(6-tert-丁基-3-甲基苯酚)(商品名:Sumilizer WX-R)、6-[3-(3-tert-丁基-4-羥基-5-甲基苯基)丙氧基]-2,4,8,10-四-tert-丁基二苯并[d,f][1,3,2]二氧雜磷環庚烷(dioxaphosphepin)(商品名:Sumilizer GP)等。
作為前述受阻胺系化合物並未特別限定,但較佳為以下所舉出者。可舉例如p,p’-二辛基二苯基胺(商品名:IRGANOX 5057)、苯基-α-萘基胺(商品名:Nocrac PA)、聚(2,2,4-三甲基-1,2-二氫喹啉)(商品名:Nocrac 224、224-S)、6-乙氧基-2,2,4-三甲基-1,2-二氫喹啉(商品名:Nocrac AW)、N,N’-二苯基-p-伸苯基二胺(商品名:Nocrac DP)、N,N’-二-β-萘基-p-伸苯基二胺(商品名:Nocrac White)、N-苯基-N’-異丙基-p-伸苯基二胺(商品名:Nocrac 810NA)、N,N’-二烯丙基-p-伸苯基二胺(商品名:Nonflex TP)、4,4’-(α,α-二甲基苄基)二苯基胺(商品名:Nocrac CD)、p,p-甲苯磺醯基胺基二苯基胺(商品名:Nocrac TD)、N-苯基-N’-(3-甲基丙烯醯氧基-2-羥基丙基)-p-伸苯基二胺(商品名:Nocrac G1)、N-(1-甲基庚基)-N’-苯基-p-伸苯基二胺(商品名:Ozonon 35)、N,N’-二-sec-丁基-p-伸苯基二胺(商品名:Sumilizer BPA)、N-苯基-N’-1,3-二甲基丁基-p-伸苯基二胺(商品名:Antigene 6C)、烷基化二苯基胺(商品名:Sumilizer 9A)、琥珀酸二甲基-1-(2-羥基乙基)-4-羥基-2,2,6,6-四甲基呱啶縮聚物(商品名:Tinuvin 622LD)、聚[[6-(1,1,3,3-四甲基丁基)胺基-1,3,5-三嗪-2,4-二基][(2,2,6,6-四甲基-4-呱啶基)亞胺基]六亞甲基[(2,2,6,6-四甲基-4-呱啶基)亞胺基]](商品名:CHIMASSORB 944)、N,N’-雙(3-胺基丙基)乙二胺-2,4-雙[N-丁基-N-(1,2,2,6,6-五甲基-4-呱啶基)胺基]-6-氯-1,3,5-三嗪縮合物(商品名:CHIMASSORB 119FL)、雙(1-辛氧基-2,2,6,6-四甲基-4-呱啶基)癸二酸酯(商品名:TINUVIN 123)、雙(2,2,6,6-四甲基-4-呱啶基)癸二酸酯(商品名:TINUVIN 770)、2-(3,5-二-tert-丁基-4-羥基苄基)-2-n-丁基丙二酸酯雙(1,2,2,6,6-五甲基-4-呱啶基)(商品名:TINUVIN 144)、雙(1,2,2,6,6-五甲基-4-呱啶基)癸二酸酯(商品名:TINUVIN 765)、肆(1,2,2,6,6-五甲基-4-呱啶基)1,2,3,4-丁烷四羧酸酯(商品名:LA-57)、肆(2,2,6,6-四甲基-4-呱啶基)1,2,3,4-丁烷四羧酸酯(商品名:LA-52)、1,2,3,4-丁烷四羧酸與1,2,2,6,6-五甲基-4-呱啶醇及1-十三醇的混合酯化物(商品名:LA-62)、1,2,3,4-丁烷四羧酸與2,2,6,6-四甲基-4-呱啶醇及1-十三醇的混合酯化物(商品名:LA-67)、1,2,3,4-丁烷四羧酸與1,2,2,6,6-五甲基-4-呱啶醇及3,9-雙(2-羥基-1,1-二甲基乙基)-2,4,8,10-四氧雜螺[5.5]十一烷的混合酯化物(商品名:LA-63P)、1,2,3,4-丁烷四羧酸與2,2,6,6-四甲基-4-呱啶醇及3,9-雙(2-羥基-1,1-二甲基乙基)-2,4,8,10-四氧雜螺[5.5]十一烷的混合酯化物(商品名:LA-68LD)、(2,2,6,6-四亞甲基-4-呱啶基)-2-丙烯羧酸酯(商品名:AdekaStab LA-82)、(1,2,2,6,6-五甲基-4-呱啶基)-2-丙烯羧酸酯(商品名:AdekaStab LA-87)等。
(E)成分的含量,在不損及本發明的效果之範圍內並未特別限定,若含有時,於本發明的感光性樹脂組成物中較佳為0.01~1質量%。(E)成分的抗氧化劑可單獨使用1種,亦可合併2種以上來使用。
[其他的添加劑]
除了前述的各成分以外,本發明的感光性樹脂組成物亦可包含其他的添加劑。作為添加劑,可舉例如用來提升塗佈性而被慣用的界面活性劑。
作為前述界面活性劑,較佳為非離子性的界面活性劑,例如,氟系界面活性劑,具體而言可舉出全氟烷基聚氧乙烯乙醇、氟化烷基酯、全氟烷基胺氧化物、含氟有機矽氧烷系化合物等。該等可使用市售者,可舉例如Fluorad(註冊商標)「FC-430」(3M公司製)、Surflon(註冊商標)「S-141」及「S-145」(AGC SeimiChemical(股)製)、Unidye(註冊商標)「DS-401」、「DS-4031」及「DS-451」(Daikin Industries(股)製)、Megaface(註冊商標)「F-8151」(DIC(股)製)、「X-70-093」(信越化學工業(股)製)等。該等之中,較佳為Fluorad「FC-430」及「X-70-093」。前述界面活性劑的含量,在不損及本發明的效果之範圍內並未特別限定,若含有時,於本發明的感光性樹脂組成物中較佳為0.01~1質量%。
又,亦可使用矽烷偶合劑來作為添加劑。藉由包含矽烷偶合劑,可更提高感光性樹脂組成物對被接著體的密著性。作為矽烷偶合劑,可舉出環氧矽烷偶合劑、含芳香族的胺基矽烷偶合劑等。該等可使用單獨1種,或可組合2種以上來使用。前述矽烷偶合劑的含量,在不損及本發明的效果之範圍內並未特別限定,若含有時,於本發明的感光性樹脂組成物中較佳為0.01~5質量%。
本發明的感光性樹脂組成物的調製方法並未特別限定,可舉例如將前述各成分進行攪拌、混合,之後因應所需地藉由用來除去固形分的濾器等來進行過濾之方法。
[圖型形成方法]
本發明的圖型形成方法為使用前述感光性樹脂組成物,並包含下述之步驟:
(i)將前述感光性樹脂組成物塗佈於基板上,於該基板上形成感光性樹脂皮膜之步驟;
(ii)隔著光罩來將前述感光性樹脂皮膜進行曝光之步驟;及
(iii)使用顯影液來將前述經曝光的感光性樹脂皮膜進行顯影之步驟。藉由該方法能夠得到微細圖型。
步驟(i)為將前述感光性樹脂組成物塗佈於基板上之步驟。作為前述基板,可舉例如矽晶圓、玻璃晶圓、石英晶圓、塑膠製電路基板、陶瓷製電路基板等。
作為塗佈方法,可舉例如浸漬法、旋塗法、輥塗法等。塗佈量可因應目的來適當選擇,但以膜厚成為0.1~100μm的量為較佳。
於此,為了有效率地進行光硬化反應,因應所需可藉由預加熱來將溶劑等予以事先蒸發。預加熱能以例如在40~160℃下進行1分~1小時左右。
接下來,作為步驟(ii),隔著光罩來將前述感光性皮膜進行曝光。此時,較佳以波長240~500nm的光來進行曝光。作為前述波長240~500nm的光,可舉出藉由放射線發生裝置所產生的各種的波長的光,例如,g線、i線等的紫外線光、遠紫外線光(248nm)等。曝光量較佳為10~5,000mJ/cm2
。
前述光罩可以是例如挖通具有所希望之圖型的光罩。尚,光罩的材質,較佳為能遮蔽前述波長240~500nm的光,可適合使用例如鉻等,但不限定於此。
於此,為了更提高顯影感度,亦可於曝光後進行加熱處理(PEB)。PEB可設為例如在40~160℃下進行5~30分鐘。
步驟(iii)為使用顯影液來將曝光後或PEB後的感光性皮膜進行顯影之步驟。作為前述顯影液,較佳為作為溶劑使用的有機溶劑系顯影液,例如,異丙醇、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯等。藉由使用前述有機溶劑系顯影液來進行顯影,能夠得到非曝光部為被溶解除去的負型圖型。能以通常之方法來進行顯影,例如,將圖型形成物浸漬於前述顯影液中等。之後,因應所需地進行洗淨、淋洗、乾燥等,而可得到具有所希望的圖型的皮膜。尚,關於圖型的形成方法係如同前述,但若不需要形成圖型之情形時,例如,僅欲形成均勻皮膜之情形時,在前述圖型形成方法的步驟(ii)中,只要以不隔著前述光罩而利用適當波長的光進行曝光,來形成皮膜即可。
更,因應所需亦可進行下述般之處理(後硬化):藉由將所得到的圖型進一步使用烘箱或加熱板,以120~300℃下加熱10分~10小時左右,來提高交聯密度、並除去殘留的揮發成分。
[光半導體元件]
使用前述感光性樹脂組成物並藉由前述方法來進行微細圖型的形成,藉此可製造光半導體元件。又,由前述感光性樹脂組成物得到的皮膜,透明性、耐光性及耐熱性為優異,具備該皮膜的光半導體元件適合使用於發光二極體等的發光元件、光二極管、光學感測器、CMOS影像感測器等的受光元件、光波導等的光傳輸裝置等的光學裝置。對於波長405nm的光,前述皮膜的透過率較佳為92.0%以上,又較佳為96.0%以上,特佳為98.0%以上。
[實施例]
以下為表示合成例、實施例及比較例來更具體地說明本發明,但本發明並不被限定於下述實施例。尚,藉由使用TSKgel Super HZM-H(Tosoh(股)製)作為管柱,並以流量0.6mL/分、溶出溶劑四氫呋喃、管柱溫度40℃的分析條件下,利用將單分散聚苯乙烯設為標準的GPC來測定Mw。
[1]含環氧基的聚矽氧樹脂的合成
[合成例1]樹脂B-1的合成
在具備攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶中加入化合物(S-5)265.0g(1.00莫耳)後,添加甲苯2,000g,加熱至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,並花費1小時滴下化合物(S-1)164.9g(0.85莫耳)及化合物(S-2)(y1
=40,信越化學工業(股)製)453.0g(0.15莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃並以6小時熟成後,將甲苯從反應溶液中減壓餾除,得到樹脂B-1。藉由1
H-NMR及29
Si-NMR(Bruker公司製)以及GPC測定來確認樹脂B-1的構造。樹脂B-1的Mw為65,000,聚矽氧含有率為51.3質量%。
[合成例2]樹脂B-2的合成
在具備攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶中加入化合物(S-3)111.6g(0.60莫耳)、化合物(S-4)156.8g(0.40莫耳)後,添加甲苯2,000g,加熱至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,並花費1小時滴下化合物(S-1)135.8g(0.70莫耳)及化合物(S-2)(y1
=40、信越化學工業(股)製)906.0g(0.30莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃並以6小時熟成後,將甲苯從反應溶液中減壓餾除,得到樹脂B-2。藉由1
H-NMR及29
Si-NMR(Bruker公司製)以及GPC測定來確認樹脂B-2的構造。樹脂B-2的Mw為55,000,聚矽氧含有率為77.7質量%。
[合成例3]樹脂B-3的合成
在具備攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶中加入化合物(S-3)111.6g(0.60莫耳)、化合物(S-5)106.0g(0.40莫耳)後,添加甲苯2,000g,加熱至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,並花費1小時滴下化合物(S-1)174.6g(0.90莫耳)及化合物(S-2)(y1
=40、信越化學工業(股)製)302.0g(0.10莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃並以6小時熟成後,將甲苯從反應溶液中減壓餾除,得到樹脂B-3。藉由1
H-NMR及29
Si-NMR(Bruker公司製)以及GPC測定來確認樹脂B-3的構造。樹脂B-3的Mw為50,000,聚矽氧含有率為59.6質量%。
[合成例4]樹脂B-4的合成
在具備攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶中加入化合物(S-4)392.0g(1.00莫耳)後,添加甲苯2,000g,加熱至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,並花費1小時滴下化合物(S-1)155.2g(0.80莫耳)及化合物(S-2)(y1
=20、信越化學工業(股)製)317.0g(0.20莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃並以6小時熟成後,將甲苯從反應溶液中減壓餾除,得到樹脂B-4。藉由1
H-NMR及29
Si-NMR(Bruker公司製)以及GPC測定來確認樹脂B-4的構造。樹脂B-4的Mw為23,000,聚矽氧含有率為36.7質量%。
[合成例5]樹脂B-5的合成
在具備攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶中加入化合物(S-4)274.4g(0.70莫耳)、化合物(S-5)79.5g(0.30莫耳)後,添加甲苯2,000g,加熱至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,並花費1小時滴下化合物(S-1)58.2g(0.30莫耳)及化合物(S-2)(y1
=20、信越化學工業(股)製)1,109.5g(0.70莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃並以6小時熟成後,將甲苯從反應溶液中減壓餾除,得到樹脂B-5。藉由1
H-NMR及29
Si-NMR(Bruker公司製)以及GPC測定來確認樹脂B-5的構造。樹脂B-5的Mw為42,000,聚矽氧含有率為72.9質量%。
[合成例6]樹脂B-6的合成
在具備攪拌機、溫度計、氮取代裝置及回流冷卻器的3L燒瓶中加入化合物(S-3)55.8g(0.30莫耳)、化合物(S-4)117.6g(0.30莫耳)、化合物(S-5)106.0g(0.40莫耳)後,添加甲苯2,000g,加熱至70℃。之後,投入氯鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,並花費1小時滴下化合物(S-1)135.8g(0.70莫耳)及化合物(S-2)(y1
=20、信越化學工業(股)製)475.5g(0.30莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃並以6小時熟成後,將甲苯從反應溶液中減壓餾除,得到樹脂B-6。藉由1
H-NMR及29
Si-NMR(Bruker公司製)以及GPC測定來確認樹脂B-6的構造。樹脂B-6的Mw為31,000,聚矽氧含有率為59.6質量%。
[2]感光性樹脂組成物的調製、及其評估
[實施例1~10、比較例1~9]
以成為如表1及2所記載的組成之方式,來混合作為(A)成分的化合物A-1~A-5或化合物A’-1~A’-5、作為(B)成分的含環氧基的聚矽氧樹脂B-1~B-6、作為(C)成分的光酸產生劑C-1、作為(D)成分(溶劑)的環戊酮、作為(E)成分(抗氧化劑)的E-1及E-2,之後予以攪拌、溶解後,利用Teflon(註冊商標)製0.2μm濾器來進行精密過濾,而調製成感光性樹脂組成物。
[圖型形成評估]
使用旋塗機,以膜厚10μm之方式來將各感光性樹脂組成物塗佈至8英寸矽晶圓上,且前述矽晶圓為已使用六甲基二矽氮烷(hexamethyldisilazane)進行底漆處理。為了將溶劑從組成物中除去,使基板放置於加熱板上,在110℃下加熱3分鐘,使其乾燥。對於所得到的感光性樹脂皮膜,為了形成線與間隔圖型及連接孔圖型,隔著遮罩並以365nm的曝光條件下,使用接觸對準型曝光裝置來進行曝光。光照射後,藉由加熱板在120℃下來進行3分鐘的PEB,冷卻後將前述基板以PGMEA(丙二醇單甲基醚乙酸酯)進行300秒鐘的噴霧顯影,而形成圖型。
將藉由前述方法來形成圖型的基板上的感光性樹脂皮膜,使用烘箱並以190℃下2小時、氮氣沖淡之同時,使其後硬化。之後,藉由掃瞄型電子顯微鏡(SEM)來觀察所形成的50μm、30μm、20μm、10μm、5μm的連接孔圖型斷面,將孔為貫通且延伸至薄膜底部的最小孔圖型設定為最大解析度(maximum resolution)。更,從所得到的斷面照片中來評估50μm的連接孔圖型的垂直性,將垂直的圖型評估為◎,將些許倒錐形形狀評估為○,將倒錐形形狀評估為△,將開口不良評估為×。將評估結果表示於表3及4中。
[光透過性試驗1]
使用旋塗機,以膜厚30μm之方式來將各感光性樹脂組成物塗佈至8英寸玻璃晶圓上。為了將溶劑從組成物中除去,使玻璃晶圓放置於加熱板上,在110℃下加熱3分鐘,使其乾燥。對塗佈於玻璃晶圓上的組成物整面,不隔著遮罩,使用SUSS MicroTec公司的遮罩對準器MA8,照射以高壓水銀燈(波長360nm)作為光源之光,之後進行PEB、浸漬於丙二醇單甲基醚乙酸酯中。將該操作後所殘留的皮膜進一步使用190℃的烘箱加熱2小時,來得到皮膜。對該皮膜使用分光光度計U-3900H((股)Hitachi High-Tech Science製)來測定波長405nm的光的透過率。將結果表示於表5及6中。
[光透過性試驗2]
將以前述方法得到的玻璃晶圓上的皮膜所構成的樣品,在150℃的烘箱中,連續照射405nm、1W的雷射,將初期的光透過率設為100%,調查在以波長405nm的照射1,500小時後的經時的光透過率的變化。將結果表示於表7及8中。
[耐熱性試驗]
準備以旋塗來塗佈各感光性樹脂組成物、並進行整面曝光及PEB後的矽晶圓的試片,測定試驗前的質量。之後,將試片放置於加熱至150℃的烘箱中2,000小時,之後取出試片,測定試驗後的質量。將試驗後的質量變化率為未滿0.5質量%之情形判定為「良好」,將質量變化率為0.5質量%以上之情形判定為「不良」。將結果表示於表9及10中。
由以上之結果可得知,本發明的感光性樹脂組成物係能夠形成微細的圖型,且展現出作為感光性材料的充分的特性之同時,該皮膜具由高光透過性、且良好的耐光性及耐熱性,故適用於作為光半導體元件用材料。
Claims (9)
- 一種感光性樹脂組成物,其特徵為包含:(A)乙烯基醚化合物、(B)包含以下述式(B1)~(B6)表示的重複單位的含環氧基的聚矽氧樹脂及(C)光酸產生劑,
- 如請求項1之感光性樹脂組成物,其中,(A)乙烯基醚化合物的分子量為50~500。
- 如請求項1之感光性樹脂組成物,其中,0<e+f≦1。
- 如請求項1之感光性樹脂組成物,其中,相對於(B)成分100質量份,(A)成分的含量為1~1,000質量份。
- 如請求項1之感光性樹脂組成物,其中,相對於(A)成分與(B)成分的合計100質量份,(C)成分的含量為0.05~20質量份。
- 如請求項1之感光性樹脂組成物,其中,進一步包含 (D)溶劑。
- 如請求項1之感光性樹脂組成物,其中,進一步包含(E)抗氧化劑。
- 一種圖型形成方法,其特徵為包含下述之步驟:(i)將請求項1~7中任一項之感光性樹脂組成物塗佈於基板上,於該基板上形成感光性樹脂皮膜之步驟;(ii)隔著光罩來將前述感光性樹脂皮膜進行曝光之步驟;及(iii)使用顯影液來將前述經曝光的感光性樹脂皮膜進行顯影之步驟。
- 一種備有形成圖型的感光性樹脂皮膜的光半導體元件之製造方法,其特徵為包含請求項8之圖型形成方法。
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