TWI804935B - 帶電粒子束調整方法、帶電粒子束描繪方法以及帶電粒子束照射裝置 - Google Patents

帶電粒子束調整方法、帶電粒子束描繪方法以及帶電粒子束照射裝置 Download PDF

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Publication number
TWI804935B
TWI804935B TW110127948A TW110127948A TWI804935B TW I804935 B TWI804935 B TW I804935B TW 110127948 A TW110127948 A TW 110127948A TW 110127948 A TW110127948 A TW 110127948A TW I804935 B TWI804935 B TW I804935B
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TW
Taiwan
Prior art keywords
lens
particle beam
charged particle
value
resolution
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TW110127948A
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English (en)
Chinese (zh)
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TW202211285A (zh
Inventor
懸樋亮一
中山貴仁
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日商紐富來科技股份有限公司
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Publication of TW202211285A publication Critical patent/TW202211285A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H01J2237/216—Automatic focusing methods

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
TW110127948A 2020-09-03 2021-07-29 帶電粒子束調整方法、帶電粒子束描繪方法以及帶電粒子束照射裝置 TWI804935B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-148499 2020-09-03
JP2020148499A JP7411521B2 (ja) 2020-09-03 2020-09-03 荷電粒子ビーム調整方法、荷電粒子ビーム描画方法、および荷電粒子ビーム照射装置

Publications (2)

Publication Number Publication Date
TW202211285A TW202211285A (zh) 2022-03-16
TWI804935B true TWI804935B (zh) 2023-06-11

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ID=80355901

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TW110127948A TWI804935B (zh) 2020-09-03 2021-07-29 帶電粒子束調整方法、帶電粒子束描繪方法以及帶電粒子束照射裝置

Country Status (4)

Country Link
US (1) US11658002B2 (enExample)
JP (1) JP7411521B2 (enExample)
KR (1) KR102650476B1 (enExample)
TW (1) TWI804935B (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
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US20140293737A1 (en) * 2012-06-08 2014-10-02 Panasonic Corporation Acousto-optic image capture device
US20150294833A1 (en) * 2012-10-29 2015-10-15 Hitachi High-Technologies Corporation Charged particle beam apparatus
TW201640554A (zh) * 2015-02-05 2016-11-16 荏原製作所股份有限公司 檢查裝置
JP2017539062A (ja) * 2014-12-26 2017-12-28 アクセリス テクノロジーズ， インコーポレイテッド ビーム減速を伴うイオン注入器におけるビーム角度調整のためのシステムおよび方法
CN110678954A (zh) * 2017-06-29 2020-01-10 艾克塞利斯科技公司 漂移模式和减速模式下具束角控制的离子注入系统
TW202143282A (zh) * 2020-01-15 2021-11-16 文淵閤智權價值顧問有限公司 掃描式電子顯微鏡

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US4568861A (en) * 1983-06-27 1986-02-04 International Business Machines Corporation Method and apparatus for controlling alignment and brightness of an electron beam
JPH0828207B2 (ja) * 1985-06-24 1996-03-21 株式会社東芝 荷電ビ−ム描画装置
JPS6355842A (ja) * 1986-08-27 1988-03-10 Toshiba Corp 荷電ビ−ム装置のビ−ムアライメント方法
JP3697494B2 (ja) * 1997-12-19 2005-09-21 富士通株式会社 ビームエッジぼけ量測定方法及びリフォーカス量決定方法、これらの方法に用いられるステンシルマスク並びに荷電粒子ビーム露光方法及び装置
JPH11224846A (ja) 1998-02-04 1999-08-17 Nikon Corp レチクル照明光学系
JP4052731B2 (ja) 1998-06-18 2008-02-27 株式会社アドバンテスト 電子銃
JP2007049023A (ja) 2005-08-11 2007-02-22 Nuflare Technology Inc 電子ビーム描画方法
JP4997013B2 (ja) * 2007-07-31 2012-08-08 株式会社日立ハイテクノロジーズ 電子分光器を備えた電子顕微鏡
JP5123754B2 (ja) 2008-06-24 2013-01-23 株式会社ニューフレアテクノロジー 描画装置及び荷電粒子ビームの焦点合わせ方法
JP5905209B2 (ja) 2011-05-18 2016-04-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
JP6665809B2 (ja) * 2017-02-24 2020-03-13 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140293737A1 (en) * 2012-06-08 2014-10-02 Panasonic Corporation Acousto-optic image capture device
US20150294833A1 (en) * 2012-10-29 2015-10-15 Hitachi High-Technologies Corporation Charged particle beam apparatus
JP2017539062A (ja) * 2014-12-26 2017-12-28 アクセリス テクノロジーズ， インコーポレイテッド ビーム減速を伴うイオン注入器におけるビーム角度調整のためのシステムおよび方法
TW201640554A (zh) * 2015-02-05 2016-11-16 荏原製作所股份有限公司 檢查裝置
CN110678954A (zh) * 2017-06-29 2020-01-10 艾克塞利斯科技公司 漂移模式和减速模式下具束角控制的离子注入系统
TW202143282A (zh) * 2020-01-15 2021-11-16 文淵閤智權價值顧問有限公司 掃描式電子顯微鏡

Also Published As

Publication number Publication date
JP2022042861A (ja) 2022-03-15
KR20220030898A (ko) 2022-03-11
US20220068591A1 (en) 2022-03-03
US11658002B2 (en) 2023-05-23
KR102650476B1 (ko) 2024-03-25
JP7411521B2 (ja) 2024-01-11
TW202211285A (zh) 2022-03-16

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