KR102650476B1 - 하전 입자 빔 조정 방법, 하전 입자 빔 묘화 방법, 및 하전 입자 빔 조사 장치 - Google Patents

하전 입자 빔 조정 방법, 하전 입자 빔 묘화 방법, 및 하전 입자 빔 조사 장치 Download PDF

Info

Publication number
KR102650476B1
KR102650476B1 KR1020210115263A KR20210115263A KR102650476B1 KR 102650476 B1 KR102650476 B1 KR 102650476B1 KR 1020210115263 A KR1020210115263 A KR 1020210115263A KR 20210115263 A KR20210115263 A KR 20210115263A KR 102650476 B1 KR102650476 B1 KR 102650476B1
Authority
KR
South Korea
Prior art keywords
lens
charged particle
particle beam
value
adjustment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020210115263A
Other languages
English (en)
Korean (ko)
Other versions
KR20220030898A (ko
Inventor
료이치 가케히
다카히토 나카야마
Original Assignee
가부시키가이샤 뉴플레어 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 뉴플레어 테크놀로지 filed Critical 가부시키가이샤 뉴플레어 테크놀로지
Publication of KR20220030898A publication Critical patent/KR20220030898A/ko
Application granted granted Critical
Publication of KR102650476B1 publication Critical patent/KR102650476B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H01J2237/216—Automatic focusing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
KR1020210115263A 2020-09-03 2021-08-31 하전 입자 빔 조정 방법, 하전 입자 빔 묘화 방법, 및 하전 입자 빔 조사 장치 Active KR102650476B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2020-148499 2020-09-03
JP2020148499A JP7411521B2 (ja) 2020-09-03 2020-09-03 荷電粒子ビーム調整方法、荷電粒子ビーム描画方法、および荷電粒子ビーム照射装置

Publications (2)

Publication Number Publication Date
KR20220030898A KR20220030898A (ko) 2022-03-11
KR102650476B1 true KR102650476B1 (ko) 2024-03-25

Family

ID=80355901

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210115263A Active KR102650476B1 (ko) 2020-09-03 2021-08-31 하전 입자 빔 조정 방법, 하전 입자 빔 묘화 방법, 및 하전 입자 빔 조사 장치

Country Status (4)

Country Link
US (1) US11658002B2 (enExample)
JP (1) JP7411521B2 (enExample)
KR (1) KR102650476B1 (enExample)
TW (1) TWI804935B (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009037738A (ja) 2007-07-31 2009-02-19 Hitachi High-Technologies Corp 電子分光器を備えた電子顕微鏡
JP2010010170A (ja) 2008-06-24 2010-01-14 Nuflare Technology Inc 描画装置及び荷電粒子ビームの焦点合わせ方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4568861A (en) * 1983-06-27 1986-02-04 International Business Machines Corporation Method and apparatus for controlling alignment and brightness of an electron beam
JPH0828207B2 (ja) * 1985-06-24 1996-03-21 株式会社東芝 荷電ビ−ム描画装置
JPS6355842A (ja) * 1986-08-27 1988-03-10 Toshiba Corp 荷電ビ−ム装置のビ−ムアライメント方法
JP3697494B2 (ja) * 1997-12-19 2005-09-21 富士通株式会社 ビームエッジぼけ量測定方法及びリフォーカス量決定方法、これらの方法に用いられるステンシルマスク並びに荷電粒子ビーム露光方法及び装置
JPH11224846A (ja) 1998-02-04 1999-08-17 Nikon Corp レチクル照明光学系
JP4052731B2 (ja) 1998-06-18 2008-02-27 株式会社アドバンテスト 電子銃
JP2007049023A (ja) 2005-08-11 2007-02-22 Nuflare Technology Inc 電子ビーム描画方法
JP5905209B2 (ja) 2011-05-18 2016-04-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
WO2013183302A1 (ja) * 2012-06-08 2013-12-12 パナソニック株式会社 音響光学撮像装置
JP6138454B2 (ja) * 2012-10-29 2017-05-31 株式会社日立ハイテクノロジーズ 荷電粒子線装置
TW201635326A (zh) * 2014-12-26 2016-10-01 艾克塞利斯科技公司 在具有射束減速的離子植入器中用於射束角度調整的系統及方法
WO2016125864A1 (ja) * 2015-02-05 2016-08-11 株式会社荏原製作所 検査装置
JP6665809B2 (ja) * 2017-02-24 2020-03-13 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
US10037877B1 (en) * 2017-06-29 2018-07-31 Axcelis Technologies, Inc Ion implantation system having beam angle control in drift and deceleration modes
TW202143282A (zh) * 2020-01-15 2021-11-16 文淵閤智權價值顧問有限公司 掃描式電子顯微鏡

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009037738A (ja) 2007-07-31 2009-02-19 Hitachi High-Technologies Corp 電子分光器を備えた電子顕微鏡
JP2010010170A (ja) 2008-06-24 2010-01-14 Nuflare Technology Inc 描画装置及び荷電粒子ビームの焦点合わせ方法

Also Published As

Publication number Publication date
JP2022042861A (ja) 2022-03-15
KR20220030898A (ko) 2022-03-11
US20220068591A1 (en) 2022-03-03
US11658002B2 (en) 2023-05-23
JP7411521B2 (ja) 2024-01-11
TWI804935B (zh) 2023-06-11
TW202211285A (zh) 2022-03-16

Similar Documents

Publication Publication Date Title
CN108508707B (zh) 多带电粒子束描绘装置及其调整方法
US10497539B2 (en) Multi charged particle beam writing apparatus and multi charged particle beam writing method
JP7400830B2 (ja) マルチ荷電粒子ビーム調整方法、マルチ荷電粒子ビーム照射方法、及びマルチ荷電粒子ビーム照射装置
US10886103B2 (en) Data processing method, data processing apparatus, and multiple charged-particle beam writing apparatus
US10930469B2 (en) Charged particle beam writing apparatus and charged particle beam writing method
KR102432752B1 (ko) 멀티 하전 입자 빔 묘화 장치 및 멀티 하전 입자 빔 묘화 방법
KR20190138583A (ko) 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법
KR102714508B1 (ko) 멀티 하전 입자 빔 묘화 장치 및 그 조정 방법
US10636616B2 (en) Aperture array alignment method and multi charged particle beam writing apparatus
KR102650476B1 (ko) 하전 입자 빔 조정 방법, 하전 입자 빔 묘화 방법, 및 하전 입자 빔 조사 장치
US11170976B2 (en) Multi-beam writing method and multi-beam writing apparatus
US10157723B2 (en) Multi charged particle beam writing apparatus and method of adjusting the same
KR101988911B1 (ko) 멀티 하전 입자빔 묘화 장치 및 그 조정 방법
KR102811445B1 (ko) 멀티 하전 입자 빔 장치의 광학계 조정 방법 및 컴퓨터 판독 가능한 기록 매체
JP7176480B2 (ja) マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20210831

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20230610

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20231222

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20240319

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20240320

End annual number: 3

Start annual number: 1

PG1601 Publication of registration