JP7411521B2 - 荷電粒子ビーム調整方法、荷電粒子ビーム描画方法、および荷電粒子ビーム照射装置 - Google Patents
荷電粒子ビーム調整方法、荷電粒子ビーム描画方法、および荷電粒子ビーム照射装置 Download PDFInfo
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- JP7411521B2 JP7411521B2 JP2020148499A JP2020148499A JP7411521B2 JP 7411521 B2 JP7411521 B2 JP 7411521B2 JP 2020148499 A JP2020148499 A JP 2020148499A JP 2020148499 A JP2020148499 A JP 2020148499A JP 7411521 B2 JP7411521 B2 JP 7411521B2
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- 239000002245 particle Substances 0.000 title claims description 67
- 238000000034 method Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims description 80
- 230000008569 process Effects 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 description 69
- 230000006870 function Effects 0.000 description 18
- 230000008859 change Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
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- 238000002039 particle-beam lithography Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
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- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000010884 ion-beam technique Methods 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
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- 238000007493 shaping process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2061—Electron scattering (proximity) correction or prevention methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1501—Beam alignment means or procedures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/21—Focus adjustment
- H01J2237/216—Automatic focusing methods
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020148499A JP7411521B2 (ja) | 2020-09-03 | 2020-09-03 | 荷電粒子ビーム調整方法、荷電粒子ビーム描画方法、および荷電粒子ビーム照射装置 |
| TW110127948A TWI804935B (zh) | 2020-09-03 | 2021-07-29 | 帶電粒子束調整方法、帶電粒子束描繪方法以及帶電粒子束照射裝置 |
| KR1020210115263A KR102650476B1 (ko) | 2020-09-03 | 2021-08-31 | 하전 입자 빔 조정 방법, 하전 입자 빔 묘화 방법, 및 하전 입자 빔 조사 장치 |
| US17/463,967 US11658002B2 (en) | 2020-09-03 | 2021-09-01 | Charged particle beam adjustment method, charged particle beam drawing method, and charged particle beam irradiation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020148499A JP7411521B2 (ja) | 2020-09-03 | 2020-09-03 | 荷電粒子ビーム調整方法、荷電粒子ビーム描画方法、および荷電粒子ビーム照射装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022042861A JP2022042861A (ja) | 2022-03-15 |
| JP2022042861A5 JP2022042861A5 (enExample) | 2023-03-24 |
| JP7411521B2 true JP7411521B2 (ja) | 2024-01-11 |
Family
ID=80355901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020148499A Active JP7411521B2 (ja) | 2020-09-03 | 2020-09-03 | 荷電粒子ビーム調整方法、荷電粒子ビーム描画方法、および荷電粒子ビーム照射装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11658002B2 (enExample) |
| JP (1) | JP7411521B2 (enExample) |
| KR (1) | KR102650476B1 (enExample) |
| TW (1) | TWI804935B (enExample) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4568861A (en) * | 1983-06-27 | 1986-02-04 | International Business Machines Corporation | Method and apparatus for controlling alignment and brightness of an electron beam |
| JPH0828207B2 (ja) * | 1985-06-24 | 1996-03-21 | 株式会社東芝 | 荷電ビ−ム描画装置 |
| JPS6355842A (ja) * | 1986-08-27 | 1988-03-10 | Toshiba Corp | 荷電ビ−ム装置のビ−ムアライメント方法 |
| JP3697494B2 (ja) * | 1997-12-19 | 2005-09-21 | 富士通株式会社 | ビームエッジぼけ量測定方法及びリフォーカス量決定方法、これらの方法に用いられるステンシルマスク並びに荷電粒子ビーム露光方法及び装置 |
| JPH11224846A (ja) | 1998-02-04 | 1999-08-17 | Nikon Corp | レチクル照明光学系 |
| JP4052731B2 (ja) | 1998-06-18 | 2008-02-27 | 株式会社アドバンテスト | 電子銃 |
| JP2007049023A (ja) | 2005-08-11 | 2007-02-22 | Nuflare Technology Inc | 電子ビーム描画方法 |
| JP4997013B2 (ja) | 2007-07-31 | 2012-08-08 | 株式会社日立ハイテクノロジーズ | 電子分光器を備えた電子顕微鏡 |
| JP5123754B2 (ja) * | 2008-06-24 | 2013-01-23 | 株式会社ニューフレアテクノロジー | 描画装置及び荷電粒子ビームの焦点合わせ方法 |
| JP5905209B2 (ja) | 2011-05-18 | 2016-04-20 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法 |
| WO2013183302A1 (ja) * | 2012-06-08 | 2013-12-12 | パナソニック株式会社 | 音響光学撮像装置 |
| JP6138454B2 (ja) * | 2012-10-29 | 2017-05-31 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| TW201635326A (zh) * | 2014-12-26 | 2016-10-01 | 艾克塞利斯科技公司 | 在具有射束減速的離子植入器中用於射束角度調整的系統及方法 |
| JP6677657B2 (ja) * | 2015-02-05 | 2020-04-08 | 株式会社荏原製作所 | 検査装置 |
| JP6665809B2 (ja) * | 2017-02-24 | 2020-03-13 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びその調整方法 |
| US10037877B1 (en) * | 2017-06-29 | 2018-07-31 | Axcelis Technologies, Inc | Ion implantation system having beam angle control in drift and deceleration modes |
| TW202143282A (zh) * | 2020-01-15 | 2021-11-16 | 文淵閤智權價值顧問有限公司 | 掃描式電子顯微鏡 |
-
2020
- 2020-09-03 JP JP2020148499A patent/JP7411521B2/ja active Active
-
2021
- 2021-07-29 TW TW110127948A patent/TWI804935B/zh active
- 2021-08-31 KR KR1020210115263A patent/KR102650476B1/ko active Active
- 2021-09-01 US US17/463,967 patent/US11658002B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022042861A (ja) | 2022-03-15 |
| TWI804935B (zh) | 2023-06-11 |
| KR20220030898A (ko) | 2022-03-11 |
| KR102650476B1 (ko) | 2024-03-25 |
| US11658002B2 (en) | 2023-05-23 |
| TW202211285A (zh) | 2022-03-16 |
| US20220068591A1 (en) | 2022-03-03 |
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