TWI804735B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TWI804735B
TWI804735B TW109118745A TW109118745A TWI804735B TW I804735 B TWI804735 B TW I804735B TW 109118745 A TW109118745 A TW 109118745A TW 109118745 A TW109118745 A TW 109118745A TW I804735 B TWI804735 B TW I804735B
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region
fin
semiconductor
gate structure
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TW109118745A
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TW202119623A (zh
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朱熙甯
江國誠
蔡慶威
程冠倫
王志豪
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台灣積體電路製造股份有限公司
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    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW109118745A 2019-09-29 2020-06-04 半導體裝置及其製造方法 TWI804735B (zh)

Applications Claiming Priority (2)

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US16/587,013 2019-09-29
US16/587,013 US11031292B2 (en) 2019-09-29 2019-09-29 Multi-gate device and related methods

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TW202119623A TW202119623A (zh) 2021-05-16
TWI804735B true TWI804735B (zh) 2023-06-11

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US (2) US11031292B2 (ko)
KR (1) KR102289286B1 (ko)
CN (1) CN112582402A (ko)
DE (1) DE102019126565B4 (ko)
TW (1) TWI804735B (ko)

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US11417766B2 (en) * 2020-04-21 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Transistors having nanostructures
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