TWI804537B - 低溫冷卻的可旋轉靜電卡盤 - Google Patents

低溫冷卻的可旋轉靜電卡盤 Download PDF

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TWI804537B
TWI804537B TW107144423A TW107144423A TWI804537B TW I804537 B TWI804537 B TW I804537B TW 107144423 A TW107144423 A TW 107144423A TW 107144423 A TW107144423 A TW 107144423A TW I804537 B TWI804537 B TW I804537B
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coupled
cryogenic
disposed
electrostatic chuck
shaft
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沙德爾 帕特爾
羅伯特 米契爾
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美商應用材料股份有限公司
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Abstract

本揭示內容的實施例係關於一種可旋轉靜電卡盤。在一些實施例中，可旋轉靜電卡盤包括介電盤，該介電盤具有至少一個卡緊電極及複數個冷卻劑通道；低溫歧管，該低溫歧管耦合到介電盤並具有冷卻劑入口及冷卻劑出口，該冷卻劑入口及該冷卻劑出口兩者皆流體耦合到複數個冷卻劑通道；軸組件，該軸組件耦合到該低溫歧管；低溫供應腔室，該低溫供應腔室耦合到軸組件；供應管，該供應管耦合到低溫供應腔室及冷卻劑入口，以將低溫介質供應到複數個冷卻劑通道，其中供應管延伸穿過軸組件的中心開口；及回流管，該回流管耦合到冷卻劑出口及低溫供應腔室，其中供應管設置在回流管內。

Description

低溫冷卻的可旋轉靜電卡盤
本揭示內容的實施例大體係關於靜電卡盤，該靜電卡盤用於在微電子裝置製造處理中保持基板。
在基板上形成某些裝置需要多層的薄膜，該等薄膜在沉積腔室如物理氣相沉積(PVD)腔室中沉積。在一些實施例中，基板需要在沉積處理期間旋轉以獲得良好的膜均勻性。某些層的沉積亦可能需要將基板冷卻。此外，沉積處理需要高真空壓力。靜電卡盤通常用於在沉積處理中將基板靜電保持在基板支撐件上。傳統上，靜電卡盤包括陶瓷主體，該陶瓷主體中具有一或更多個電極。典型的可旋轉靜電卡盤僅能夠在室溫或更高溫度下使用。然而，發明人觀察到某些處理要求將基板冷卻至顯著低於當前靜電卡盤可能的溫度。
因此，發明人提供了改進的可旋轉靜電卡盤的實施例。
本揭示內容的實施例係關於可旋轉靜電卡盤。在一些實施例中，靜電卡盤包括介電盤，該介電盤具有支撐表面以支撐基板，及相對的第二表面，其中至少一個卡緊電極設置在介電盤內的支撐表面及第二表面之間，且其中複數個冷卻劑通道設置在介電盤內；低溫歧管，該低溫歧管耦合到介電盤的第二表面並具有冷卻劑入口及冷卻劑出口，該冷卻劑入口及該冷卻劑出口兩者皆流體耦合到複數個冷卻劑通道；軸組件，該軸組件在其第一端處耦合到低溫歧管，其中該軸組件包括延伸穿過該軸組件的中心開口；低溫供應腔室，該低溫供應腔室在軸組件相對於該第一端的第二端處耦合到軸組件；供應管，該供應管在其第一端處耦合到低溫供應腔室以接收低溫介質，且在該供應管的第二端處耦合到冷卻劑入口以將低溫介質供應到複數個冷卻劑通道，其中供應管延伸穿過該中心開口並與軸組件同心(concentric)；及回流管，該回流管在其第一端處耦合到冷卻劑出口，且在回流管的第二端處耦合到低溫供應腔室，以在低溫介質流過複數個冷卻劑通道之後，使低溫介質返回到低溫供應腔室，其中回流管延伸穿過該中心開口並與供應管同心，且其中供應管設置在回流管內。
在一些實施例中，靜電卡盤包括介電盤，該介電盤具有支撐表面以支撐基板，及相對的第二表面，其中至少一個卡緊電極設置在介電盤內的支撐表面及第二表面之間，且其中複數個冷卻劑通道設置在介電盤內；低溫歧管，該低溫歧管耦合到介電盤的第二表面並具有冷卻劑入口及冷卻劑出口，該冷卻劑入口及該冷卻劑出口兩者皆流體耦合到複數個冷卻劑通道；軸組件，該軸組件在其第一端處耦合到低溫歧管，其中該軸組件包括延伸穿過該軸組件的中心開口；低溫供應腔室，該低溫供應腔室在軸組件相對於該第一端的第二端處耦合到軸組件；真空泵，該真空泵流體耦合到低溫供應腔室，以將該低溫供應腔室維持在真空壓力；供應管，該供應管在其第一端處耦合到低溫供應腔室以接收低溫介質，且在該供應管的第二端處耦合到冷卻劑入口以將低溫介質供應到複數個冷卻劑通道，其中供應管延伸穿過該中心開口並與軸組件同心；隔熱層，該隔熱層設置在供應管的外表面上；回流管，該回流管在其第一端處耦合到冷卻劑出口並且在該回流管的第二端處耦合到低溫供應腔室，以在低溫介質流過複數個冷卻劑通道之後使低溫介質返回到低溫供應腔室，其中回流管延伸穿過中心開口並與供應管同心，且其中供應管設置在回流管內；滑環，該滑環耦合到軸組件的第二端，以促使來自電源的功率耦合到至少一個卡緊電極；及驅動組件，該驅動組件耦合到軸組件以使軸組件及介電盤旋轉。
在一些實施例中，處理腔室包括腔室主體，該腔室主體具有內部體積；及靜電卡盤，該靜電卡盤設置在內部體積的下部內。靜電卡盤包括介電盤，該介電盤具有支撐表面以支撐基板，及相對的第二表面，其中至少一個卡緊電極被設置在介電盤內的支撐表面及第二表面之間，且其中複數個冷卻劑通道被設置在介電盤內；低溫歧管，該低溫歧管耦合到介電盤的第二表面並具有冷卻劑入口及冷卻劑出口，該冷卻劑入口及該冷卻劑出口兩者皆流體耦合到複數個冷卻劑通道；軸組件，該軸組件在其第一端處耦合到低溫歧管，其中該軸組件包括延伸穿過該軸組件的中心開口；低溫供應腔室，該低溫供應腔室在軸組件相對於該第一端的第二端處耦合到軸組件；供應管，該供應管在其第一端處耦合到低溫供應腔室以接收低溫介質，且在該供應管的第二端處耦合到冷卻劑入口以將低溫介質供應到複數個冷卻劑通道，其中供應管延伸穿過該中心開口並與軸組件同心；及回流管，該回流管在其第一端處耦合到冷卻劑出口，且在回流管的第二端處耦合到低溫供應腔室，以在低溫介質流過複數個冷卻劑通道之後，使低溫介質返回到低溫供應腔室，其中回流管延伸穿過該中心開口並與供應管同心，且其中供應管設置在回流管內。
以下更詳細地描述本揭示內容的其他及進一步的實施例。
本文提供了具有低溫冷卻功能的可旋轉靜電卡盤(ESC)的實施例。創新的靜電卡盤對旋轉ESC提供低溫冷卻介質，因此有利地允許旋轉ESC用於需要比傳統可旋轉ESC使用傳統冷卻方法可能達到的溫度更低的溫度的處理。
圖1是根據本揭示內容的一些實施例的處理腔室(例如，電漿處理腔室)的示意性剖面圖。在一些實施例中，電漿處理腔室是物理氣相沉積(PVD)處理腔室。然而，配置用於不同處理的其他類型的處理腔室亦可使用或經修改以用於本文所述之創新靜電卡盤的實施例。
腔室100為真空腔室，其合適地適配以在基板處理期間在腔室內部體積120內維持低於大氣壓的壓力。腔室100包括由蓋子104覆蓋的腔室主體106，該蓋子104包圍位於腔室內部體積120的上半部分中的處理體積119。腔室100亦可包括一或更多個護罩105，該護罩圍繞各種腔室部件，以防止此類部件與離子化的處理材料之間產生不期望的反應。腔室主體106及蓋子104可由金屬如鋁製成。腔室主體106可透過對地115的耦合而接地。
基板支撐件124設置在腔室內部體積120內，以支撐及保持基板S，例如半導體晶圓，或可靜電保持其他此類基板。基板支撐件124通常可包括靜電卡盤150(下方參考圖2A至圖2B更詳細地描述)及用於支撐靜電卡盤150的中空支撐軸112。中空支撐軸112提供導管以向靜電卡盤150提供，例如，處理氣體、流體、冷卻劑、電力等。
在一些實施例中，中空支撐軸112耦合到升舉機構113，例如致動器或馬達，該升舉機構提供靜電卡盤150在上部處理位置(如圖1所示)及下部轉移位置(未圖示)之間的垂直運動。波紋管組件110圍繞中空支撐軸112設置，並且耦合在靜電卡盤150及腔室100的底表面126之間，以提供彈性密封，該彈性密封允許靜電卡盤150的垂直運動並同時防止腔室100內失去真空。波紋管組件110亦包括下波紋管凸緣164，該下波紋管凸緣與O形環165或其他合適的密封元件接觸，該密封元件與底表面126接觸，以幫助防止失去腔室真空。
中空支撐軸112提供導管，該導管用於將流體源142、氣體供應源141、卡緊電源140及RF源(例如，RF電漿電源170及RF偏壓電源117)耦合到靜電卡盤150。在一些實施例中，RF電漿電源170及RF偏壓電源117經由相應的RF匹配網絡(僅圖示RF匹配網絡116)耦合到靜電卡盤。在一些實施例中，基板支撐件可替代地包括AC、DC或RF偏壓功率。
基板升舉器130可包括升舉銷109，該等升舉銷安裝在平台108上，該平台耦合到軸111，該軸耦合到第二升舉機構132，以便升高及降低基板升舉器130，使得基板「S」可放置在靜電卡盤150上或從該靜電卡盤移除。靜電卡盤150包括用以接收升舉銷109的通孔。波紋管組件131耦合在基板升舉器130及底表面126之間以提供彈性密封，該彈性密封在基板升舉器130的垂直運動期間保持腔室真空。
腔室100耦合到真空系統114並與該真空系統流體連通，該真空系統包括用以使腔室100排氣的節流閥(未圖示)及真空泵(未圖示)。可藉由調整節流閥及/或真空泵來調節腔室100內的壓力。腔室100亦耦合到處理氣體供應源118並與該處理氣體供應源流體連通，該處理氣體供應源可將一或更多種處理氣體供應到腔室100，以便處理設置在其中的基板。
在操作中，例如，可在腔室內部體積120中產生電漿102以執行一或更多個處理。可藉由透過一或更多個電極將來自電漿電源(例如，RF電漿電源170)的功率耦合到處理氣體來產生電漿102，該一或更多個電極靠近腔室內部體積120或在該腔室內部體積之內，以點燃處理氣體並產生電漿102。在一些實施例中，亦可透過電容耦合的偏壓板(下方描述)以從偏壓電源(例如，RF偏壓電源117)提供偏壓功率給設置在靜電卡盤150內的一或更多個電極(下方描述)，以便從電漿吸引離子朝向基板S。
在一些實施例中，例如在腔室100是PVD腔室的情況下，靶材166可設置在基板上方且在腔室內部體積120內，該靶材包括待沉積在基板S上的來源材料。靶材166可由腔室100的接地導電部分支撐，例如穿過介電隔離器的鋁製適配器。在其他實施例中，腔室100可包括多陰極佈置中的複數個靶材，以便使用相同的腔室沉積不同的材料層。
可控制的DC電源168可耦合到腔室100，以對靶材166施加負電壓或偏壓。RF偏壓電源117可耦合到基板支撐件124，以便在基板S上引發負DC偏壓。另外，在一些實施例中，在處理期間可在基板S上形成負DC自偏壓。在一些實施例中，RF電漿電源170亦可耦合到腔室100以將RF功率施加到靶材166，以促進控制基板S上的沉積速率的徑向分佈。在操作中，在腔室100中產生的電漿102中的離子與來自靶材166的來源材料反應。該反應使得靶材166發射來源材料的原子，接著該原子被導向基板S，從而沉積材料。
將參考圖2A至圖2C進行以下描述。圖2A根據本揭示內容的至少一些實施例描繪靜電卡盤200的上部的示意性剖面圖。圖2B根據本揭示內容的至少一些實施例描繪靜電卡盤200的下部的示意性剖面圖。圖2C描繪圖2B的靜電卡盤的一部分的特寫示意性剖面圖。靜電卡盤200包括介電盤202，該介電盤具有支撐表面204以支撐基板、相對的第二表面206，及至少一個卡緊電極208，該卡緊電極設置在介電盤202內的支撐表面204及第二表面206之間。介電盤202亦包括複數個冷卻劑通道210，該等冷卻劑通道亦設置在介電盤202內的支撐表面204及第二表面206之間。複數個冷卻劑通道210可形成在介電盤202中，或可包括非滲透性管線以防止低溫介質的洩漏。如圖2A所示，靜電卡盤200的上部設置在殼體221內，該殼體具有類似碟形的形狀。殼體221亦包括處理流程中必要的額外特徵，例如，殼體升舉銷孔223(圖2A中圖示一個)，該等殼體升舉銷孔與相應的盤升舉銷孔225對準，以允許相應的升舉銷240(圖2A中圖示一個)從支撐表面204穿過並使基板升高離開該支撐表面。
在一些實施例中，低溫歧管212耦合到介電盤202的第二表面206。低溫歧管212包括冷卻劑入口214及冷卻劑出口216，該冷卻劑入口及該冷卻劑出口兩者皆流體耦合到複數個冷卻劑通道210。軸組件218在軸組件218的第一端220處耦合到低溫歧管212。軸組件218包括延伸穿過軸組件218的中心開口222，該低溫介質供應管/回流管(下方論述)延伸穿過該中心開口222。軸組件218包括軸224及撓曲耦合件226。軸224及撓曲耦合件226分別包括第一中央通道228及第二中央通道230，其在一起形成中心開口222。撓曲耦合件226經配置以在靜電卡盤200的旋轉期間將介電盤202保持實質水平。
驅動組件227耦合到軸組件218，以使軸組件218及介電盤202旋轉。滑環232(下方論述)耦合到軸224的第一端234，以促使來自電源236的功率耦合到靜電卡盤200的各種部件，例如一或更多個卡緊電極208、一或更多個熱電偶241等。在一些實施例中，一或更多個功率耦合件243(第一功率耦合件)可延伸穿過會轉動的滑環232的一部分，並進入到軸224的底部。功率耦合件243電性耦合到第二功率耦合件245，該第二功率耦合件延伸穿過撓曲耦合件226的下部並進入軸224的上部。撓曲耦合件226耦合到與滑環232相對的軸224的第二端242。在一些實施例中，軸承組件233繞著撓曲耦合件226設置，以對靜電卡盤200的上部提供額外的支撐/剛性，尤其是在旋轉期間。
低溫供應腔室244在與第一端220相對的軸組件218的第二端247處耦合到軸組件218，以將低溫介質供應到介電盤202。由低溫供應腔室244供應到介電盤202的低溫介質在約5克耳文(Kelvin)及約293克耳文之間。在一些實施例中，低溫介質可為液態氮、液態氦混合冷媒氣體，或類似者。
為了促使將低溫介質從低溫供應腔室244輸送到介電盤202，供應管246在供應管246的第一端248處耦合到低溫供應腔室244並且在供應管246的第二端250處耦合到低溫歧管212的冷卻劑入口214，以將低溫介質供應到複數個冷卻劑通道210。在一些實施例中，供應管246延伸穿過中心開口222並與軸組件218同心。
為了在低溫介質流過複數個冷卻劑通道210之後促使低溫介質返回低溫供應腔室244，回流管252在回流管252的第一端254處耦合到低溫歧管212的冷卻劑出口216，且在回流管252的第二端256處耦合到低溫供應腔室244。在一些實施例中，且如圖2A、圖2B所示，回流管252延伸穿過中心開口222並且設置在供應管246內並與該供應管同心。在一些實施例中，為了最小化或實質上防止流過供應管246的低溫介質與流過回流管252的用過的低溫介質之間進行熱傳，如圖2C所示的隔熱層258可設置在供應管246的外表面上。在一些實施例中，隔熱層258可為塗層，例如聚四氟乙烯(polytetrafluoroethylene)、陶瓷，或類似者。在一些實施例中，隔熱層258可替代地為陶瓷管，其中供應管246插入該陶瓷管中。
低溫供應腔室244包括限定內部體積262的腔室主體260。耦合到冷卻器266以用於低溫介質之供應及返回的饋通塊264設置在內部體積262內。饋通塊264包括饋通入口268及饋通出口270，該饋通入口流體耦合到供應管246，且該饋通出口流體耦合到回流管252。由於流過饋通塊264的低溫介質處於如此低溫，故在饋通塊264上可能積聚冰或霜。為了避免此種冰積聚，真空泵272透過形成在腔室主體260中的真空端口274流體耦合到內部體積262，以將內部體積262保持在真空壓力。在一些實施例中，真空泵272是粗抽泵(roughing pump)，該粗抽泵經配置以將內部體積中的壓力保持在大約粗略的真空壓力下。在供應管246及回流管252旋轉的同時，饋通塊264保持靜止。
在一些實施例中，靜電卡盤200亦可包括密封管276，密封管276耦合到回流管252的下部並且與回流管252同心。密封管276經配置以將處於粗略真空壓力的低溫供應腔室244的有效體積從處於處理壓力的處理體積(例如，處理體積119)密封。為了實現此種密封，密封管276包括天花板部278及開口底端280，該天花板部278耦合到回流管252的下部。在一些實施例中，天花板部278焊接到回流管252。回流管252延伸穿過密封管276的一部分並終止於密封管276內的一點。在一些實施例中，環形密封件261可圍繞密封管276的底部設置，以將環形密封件261下方的粗略真空環境從環形密封件261上方的處理真空環境隔離。
在一些實施例中，波紋管282耦合到回流管252的最下表面284並且設置在密封管276內。波紋管282將回流管252流體耦合到饋通出口270。波紋管282經配置以補償回流管252的熱膨脹、回流管252相對於供應管246的任何錯位，以及由靜電卡盤200的旋轉引起的慣性所導致的任何鬆弛。在一些實施例中，波紋管282由不鏽鋼形成。
為了促使冷卻傳遞到設置在介電盤202上方的基板，靜電卡盤200亦包括背側氣體輸送系統286，該背側氣體輸送系統流體耦合到介電盤202，以將背側氣體供應到複數個背側氣體出口288，該等背側氣體出口透過支撐表面204形成，該支撐表面靠近介電盤202的周邊。在一些實施例中，背側氣體輸送系統286包括旋轉饋通件290，該旋轉饋通件繞著軸224設置並與軸224同心；背側氣體導管292，該背側氣體導管耦合到軸224的第二端242，以及背側氣體歧管294，該背側氣體歧管耦合到與軸224相對的背側氣體導管292。旋轉饋通件290包括靜止的殼體251及圓柱形部分253，該圓柱形部分設置在該殼體內並且可旋轉。兩個環形軸承組件255、257設置在殼體251與圓柱形部分253之間。旋轉饋通件290亦包括背側氣體耦合件296，以促使背側氣體供應源耦合到旋轉饋通件290。背側氣體歧管294設置在低溫歧管212與撓曲耦合件226之間，並且包括歧管通道298，該歧管通道與相應的導管299一起將背側氣體導管292流體耦合到介電盤202中的背側氣體入口203，該相應的導管299形成在低溫歧管212中並與歧管通道298對準。軸224包括背側氣體通道265，以將背側氣體耦合件296流體耦合到背側氣體導管292。
在一些實施例中，軸224包括形成在軸224的外表面231中的環形凹部229，且該環形凹部鄰近背側氣體耦合件296而設置。背側氣體通道265將環形凹部229流體耦合至背側氣體導管292，使得來自背側氣體耦合件296的背側氣體流動進入環形凹部229，穿過軸224的背側氣體通道265，穿過背側氣體導管292，穿過背側氣體入口203，並穿過複數個背側氣體出口288。為了防止背側氣體洩漏，第一環形密封件239設置在背側氣體耦合件296上方且第二環形密封件249設置在背側氣體耦合件296下方，該第一環形密封件及該第二環形密封件兩者都設置在殼體251與圓柱形部分253之間。在一些實施例中，第一環形密封元件239及第二環形密封元件249是鐵磁流體(ferrofluidic)密封件。另外，第三環形密封元件235繞著軸224設置在背側氣體耦合件296上方，且第四環形密封元件237繞著軸224設置在背側氣體耦合件296下方，以將位於第三環形密封元件235及第四環形密封元件237下方的粗略真空壓力環境從第三環形密封元件235及第四環形密封元237上方的處理真空壓力環境流體地隔離。
為了控制設置在介電盤202上方的基板的冷卻速率，對背側氣體的流速及由卡緊電極提供的夾持力進行控制，以達成基板下方的所需壓力及產生期望的冷卻速率的基板夾持。一或更多個熱電偶241可監測介電盤202的溫度。對複數個冷卻劑通道210的低溫介質供應及背側氣體的流速是基於由熱電偶241提供的溫度讀數來控制。
儘管前述內容針對本揭示內容的實施例，但可在不脫離本揭示內容的基本範疇的情況下設計出本揭示內容的其他及進一步實施例。
100‧‧‧腔室 102‧‧‧電漿 104‧‧‧蓋子 105‧‧‧護罩 106‧‧‧腔室主體 108‧‧‧平台 109‧‧‧升舉銷 110‧‧‧波紋管組件 111‧‧‧軸 112‧‧‧中空支撐軸 113‧‧‧升舉機構 114‧‧‧真空系統 115‧‧‧地 116‧‧‧RF匹配網絡 117‧‧‧RF偏壓電源 118‧‧‧處理氣體供應源 119‧‧‧處理體積 120‧‧‧腔室內部體積 124‧‧‧基板支撐件 126‧‧‧底表面 130‧‧‧基板升舉器 131‧‧‧波紋管組件 132‧‧‧第二升舉機構 140‧‧‧卡緊電源 141‧‧‧氣體供應源 142‧‧‧流體源 150‧‧‧靜電卡盤 164‧‧‧下波紋管凸緣 166‧‧‧靶材 168‧‧‧DC電源 170‧‧‧RF電漿電源 200‧‧‧靜電卡盤 202‧‧‧介電盤 203‧‧‧背側氣體入口 204‧‧‧支撐表面 206‧‧‧第二表面 208‧‧‧卡緊電極 210‧‧‧冷卻劑通道 212‧‧‧低溫歧管 214‧‧‧冷卻劑入口 216‧‧‧冷卻劑出口 218‧‧‧軸組件 220‧‧‧第一端 221‧‧‧殼體 222‧‧‧中心開口 223‧‧‧殼體升舉銷孔 224‧‧‧軸 225‧‧‧盤升舉銷孔 226‧‧‧撓曲耦合件 227‧‧‧驅動組件 228‧‧‧第一中央通道 229‧‧‧環形凹部 230‧‧‧第二中央通道 231‧‧‧外表面 232‧‧‧滑環 233‧‧‧軸承組件 234‧‧‧第一端 235‧‧‧第三環形密封元件 236‧‧‧電源 237‧‧‧第四環形密封元件 239‧‧‧第一環形密封件 240‧‧‧升舉銷 241‧‧‧熱電偶 242‧‧‧第二端 243‧‧‧功率耦合件 244‧‧‧低溫供應腔室 245‧‧‧第二功率耦合件 246‧‧‧供應管 247‧‧‧第二端 248‧‧‧第一端 249‧‧‧第二環形密封件 250‧‧‧第二端 251‧‧‧殼體 252‧‧‧回流管 253‧‧‧圓柱形部分 254‧‧‧第一端 255‧‧‧環形軸承組件 256‧‧‧第二端 257‧‧‧環形軸承組件 258‧‧‧隔熱層 260‧‧‧腔室主體 261‧‧‧環形密封件 262‧‧‧內部體積 264‧‧‧饋通塊 266‧‧‧冷卻器 268‧‧‧饋通入口 270‧‧‧饋通出口 272‧‧‧真空泵 274‧‧‧真空端口 276‧‧‧密封管 278‧‧‧天花板部 280‧‧‧開口底端 282‧‧‧波紋管 284‧‧‧最下表面 286‧‧‧背側氣體輸送系統 288‧‧‧背側氣體出口 290‧‧‧旋轉饋通件 292‧‧‧背側氣體導管 294‧‧‧背側氣體歧管 296‧‧‧背側氣體耦合件 298‧‧‧歧管通道 299‧‧‧導管 S‧‧‧基板
可透過參考附圖中描繪的本揭示內容的說明性實施例來理解本揭示內容的實施例，該等實施例在以上簡要概述並在下方更詳細討論。然而，附圖僅圖示了本揭示內容的典型實施例，因此不應視為對範疇的限制，因為本揭示內容可允許其他等效的實施例。
圖1根據本揭示內容的至少一些實施例描繪適合具有靜電卡盤的處理腔室的示意性側視圖。
圖2A根據本揭示內容的至少一些實施例描繪靜電卡盤的上部的示意性剖面圖。
圖2B根據本揭示內容的至少一些實施例描繪靜電卡盤的下部的示意性剖面圖。
圖2C描繪圖2B的靜電卡盤的一部分的特寫示意性剖面圖。
為了便於理解，在可能的情況下使用相同的元件符號來表示圖式中共有的相同元件。圖式未按比例繪製，且可能為了清楚起見而簡化。一個實施例的元件及特徵可有利地併入其他實施例中而無需進一步敘述。
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國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
100‧‧‧腔室
102‧‧‧電漿
104‧‧‧蓋子
105‧‧‧護罩
106‧‧‧腔室主體
108‧‧‧平台
109‧‧‧升舉銷
110‧‧‧波紋管組件
111‧‧‧軸
112‧‧‧中空支撐軸
113‧‧‧升舉機構
114‧‧‧真空系統
115‧‧‧地
116‧‧‧RF匹配網絡
117‧‧‧RF偏壓電源
118‧‧‧處理氣體供應源
119‧‧‧處理體積
120‧‧‧腔室內部體積
124‧‧‧基板支撐件
126‧‧‧底表面
130‧‧‧基板升舉器
131‧‧‧波紋管組件
132‧‧‧第二升舉機構
140‧‧‧卡緊電源
141‧‧‧氣體供應源
142‧‧‧流體源
150‧‧‧靜電卡盤
164‧‧‧下波紋管凸緣
166‧‧‧靶材
168‧‧‧DC電源
170‧‧‧RF電漿電源
200‧‧‧靜電卡盤
202‧‧‧介電盤
203‧‧‧背側氣體入口
204‧‧‧支撐表面
206‧‧‧第二表面
208‧‧‧卡緊電極
210‧‧‧冷卻劑通道
212‧‧‧低溫歧管
214‧‧‧冷卻劑入口
216‧‧‧冷卻劑出口
218‧‧‧軸組件
220‧‧‧第一端
221‧‧‧殼體
222‧‧‧中心開口
223‧‧‧殼體升舉銷孔
224‧‧‧軸
225‧‧‧盤升舉銷孔
226‧‧‧撓曲耦合件
228‧‧‧第一中央通道
233‧‧‧軸承組件
240‧‧‧升舉銷
241‧‧‧熱電偶
242‧‧‧第二端
243‧‧‧功率耦合件
244‧‧‧低溫供應腔室
245‧‧‧第二功率耦合件
246‧‧‧供應管
250‧‧‧第二端
252‧‧‧回流管
254‧‧‧第一端
288‧‧‧背側氣體出口
292‧‧‧背側氣體導管
294‧‧‧背側氣體歧管
298‧‧‧歧管通道
299‧‧‧導管
S‧‧‧基板

Claims (19)

  1. 一種靜電卡盤，包括：一介電盤，該介電盤具有一支撐表面及一相對的第二表面，該支撐表面用以支撐一基板，其中至少一個卡緊電極設置在該介電盤內的該支撐表面及該第二表面之間，且其中複數個冷卻劑通道完全地設置在該介電盤內；一低溫歧管，該低溫歧管在該等冷卻劑通道下方處耦合到該介電盤的該第二表面並具有一冷卻劑入口及一冷卻劑出口，該冷卻劑入口及該冷卻劑出口兩者皆流體耦合到該複數個冷卻劑通道；一軸組件，其在該軸組件的一第一端處耦合到該低溫歧管，其中該軸組件包括延伸穿過該軸組件的一中心開口，其中該軸組件包括位在該軸組件的該第一端處的一撓曲耦合件以及耦合到該撓曲耦合件的一軸，其中該撓曲耦合件及該軸經配置以在旋轉期間將該介電盤保持實質水平；一背側氣體歧管，該背側氣體歧管設置在該低溫歧管與該撓曲耦合件之間，該背側氣體歧管具有一歧管通道，該歧管通道與形成在該低溫歧管中的一相應的導管對準，以使一背側氣體導管與該介電盤中的一背側氣體入口進行流體耦合； 一低溫供應腔室，該低溫供應腔室在該軸組件相對於該第一端的一第二端處耦合到該軸組件；一供應管，其在該供應管的一第一端處耦合到該低溫供應腔室以接收一低溫介質，且在該供應管的一第二端處耦合到該冷卻劑入口以將該低溫介質供應到該複數個冷卻劑通道，其中該供應管延伸穿過該中心開口並與該軸組件同心；一回流管，其在該回流管的一第一端處耦合到該冷卻劑出口，且在該回流管的一第二端處耦合到該低溫供應腔室，以在該低溫介質流過該複數個冷卻劑通道之後，使該低溫介質返回到該低溫供應腔室，其中該回流管延伸穿過該中心開口並與該供應管同心，且其中該供應管設置在該回流管內，且該背側氣體導管自該供應管的外部隔開；一軸承組件，該軸承組件繞著該撓曲耦合件設置，且該軸承組件垂直地設置在該撓曲耦合件與該介電盤之間；及一驅動組件，該驅動組件耦合到該軸組件，該驅動組件經配置以使該軸組件及該介電盤旋轉。
  2. 如請求項1所述之靜電卡盤，進一步包括：一滑環，該滑環在與該撓曲耦合件相對的該軸的一端處耦合到該軸，以促使來自一電源的功率耦合到該 至少一個卡緊電極。
  3. 如請求項1所述之靜電卡盤，進一步包括一殼體，該殼體具有繞著該介電盤及該低溫歧管而設置的一類似碟形的形狀。
  4. 如請求項1所述之靜電卡盤，進一步包括：一背側氣體輸送系統，該背側氣體輸送系統流體耦合到該介電盤，其中該背側氣體輸送系統包括：一旋轉饋通件，該旋轉饋通件繞著該軸設置並與該軸同心且具有一背側氣體耦合件，其中該旋轉饋通件包括一靜止的殼體及一可旋轉的圓柱形部分，該可旋轉的圓柱形部分設置在該靜止的殼體內，且其中兩個環形軸承組件設置在該靜止的殼體與該可旋轉的圓柱形部分之間；該背側氣體導管，其耦合到該軸的該第二端；及該背側氣體歧管，其耦合至與該軸相對的該背側氣體導管，其中一背側氣體通道是透過該軸形成，以將該背側氣體耦合件流體耦合到該背側氣體導管。
  5. 如請求項4所述之靜電卡盤，其中該軸包括一環形凹部，該環形凹部形成在該軸的一外表面中，其中該環形凹部鄰近該背側氣體耦合件而設置，且其中該背側氣體通道將該環形凹部流體耦合至該背側氣 體導管。
  6. 如請求項4所述之靜電卡盤，進一步包括：一第一環形密封元件，該第一環形密封元件設置在該靜止的殼體與該可旋轉的圓柱形部分之間的該背側氣體耦合件上方；及一第二環型密封元件，該第二環型密封元件設置在該靜止的殼體與該可旋轉的圓柱形部分之間的該背側氣體耦合件下方，其中該第一環型密封元件及該第二環型密封元件經配置以防止經由該背側氣體耦合件供應的背側氣體洩漏。
  7. 如請求項1至6中任一項所述之靜電卡盤，其中該低溫供應腔室包括：一腔室主體，該腔室主體限定一內部體積；及一饋通塊，該饋通塊具有一饋通入口及一饋通出口，該饋通入口流體耦合到該供應管，且該饋通出口流體耦合到該回流管。
  8. 如請求項7所述之靜電卡盤，進一步包括：一真空泵，該真空泵透過形成在該腔室主體中的一真空端口流體耦合到該內部體積，以將該內部體積保持在真空壓力。
  9. 如請求項7所述之靜電卡盤，進一步包括： 一密封管，該密封管耦合到該回流管的一下部並且經設置以與該回流管同心，其中該回流管延伸穿過該密封管的一部分，其中該密封管包括一天花板部及一開口底端，且其中該天花板部耦合至該回流管的該下部以對該低溫供應腔室的一有效體積進行密封。
  10. 如請求項9所述之靜電卡盤，進一步包括：波紋管，該波紋管耦合到該回流管的一最下表面並且設置在該密封管內，其中在該波紋管中的一體積被流體耦合到該饋通出口。
  11. 如請求項10所述之靜電卡盤，其中該波紋管由不鏽鋼形成，且焊接到該回流管的該最下表面。
  12. 如請求項1至6中任一項所述之靜電卡盤，進一步包括：一隔熱層，該隔熱層設置在該供應管的一外表面上。
  13. 一種靜電卡盤，包括：一介電盤，該介電盤具有一支撐表面及相對的一第二表面，該支撐表面用以支撐一基板，其中至少一個卡緊電極設置在該介電盤內的該支撐表面及該第二表面之間，且其中複數個冷卻劑通道設置在該介電盤內； 一低溫歧管，該低溫歧管耦合到該介電盤的該第二表面並具有一冷卻劑入口及一冷卻劑出口，該冷卻劑入口及該冷卻劑出口兩者皆流體耦合到該複數個冷卻劑通道；一軸組件，其在該軸組件的一第一端處耦合到該低溫歧管，其中該軸組件包括延伸穿過該軸組件的一中心開口；一低溫供應腔室，該低溫供應腔室在該軸組件相對於該第一端的一第二端處耦合到該軸組件；一真空泵，該真空泵流體耦合到該低溫供應腔室，以將該低溫供應腔室維持在真空壓力；一供應管，其在該供應管的一第一端處耦合到該低溫供應腔室以接收一低溫介質，且在該供應管的一第二端處耦合到該冷卻劑入口以將該低溫介質供應到該複數個冷卻劑通道，其中該供應管延伸穿過該中心開口並與該軸組件同心；一隔熱層，該隔熱層設置在該供應管的一外表面上；一回流管，其在該回流管的一第一端處耦合到該冷卻劑出口並且在該回流管的一第二端處耦合到該低溫供應腔室，以在該低溫介質流過該複數個冷卻劑通道之後使該低溫介質返回到該低溫供應腔室，其中該回 流管延伸穿過該中心開口並與該供應管同心，且其中該供應管設置在該回流管內；一滑環，該滑環耦合到該軸組件的該第二端，以促使來自一電源的功率耦合到該至少一個卡緊電極；及一驅動組件，該驅動組件耦合到該軸組件以使該軸組件及該介電盤旋轉。
  14. 如請求項13所述之靜電卡盤，其中該軸組件包括：一軸，該軸具有一中央通道並且在該軸的一第一端處耦合到該滑環；及一撓曲耦合件，該撓曲耦合件耦合到該軸相對於該第一端的一第二端，且該撓曲耦合件經配置以在旋轉期間將該介電盤保持實質水平。
  15. 如請求項14所述之靜電卡盤，進一步包括：一軸承組件，該軸承組件繞著該撓曲耦合件設置。
  16. 如請求項14所述之靜電卡盤，進一步包括：一背側氣體輸送系統，該背側氣體輸送系統流體耦合到該介電盤，其中該背側氣體輸送系統包括：一旋轉饋通件，該旋轉饋通件繞著該軸設置並與該軸同心且具有一背側氣體耦合件，其中該旋轉饋 通件包括一靜止的殼體及一可旋轉的圓柱形部分，該圓柱形部分設置在該殼體內，且其中兩個環形軸承組件設置在該靜止的殼體與該可旋轉的圓柱形部分之間；一背側氣體導管，該背側氣體導管耦合到該軸的該第二端；及一背側氣體歧管，該背側氣體歧管耦合至與該軸相對的該背側氣體導管，其中該背側氣體歧管設置在該低溫歧管與該撓曲耦合件之間，且其中該背側氣體歧管包括一歧管通道，以使該該背側氣體導管流體耦合到該介電盤中的一背側氣體入口，其中一背側氣體通道是透過該軸形成，以將該背側氣體耦合件流體耦合到該背側氣體導管。
  17. 如請求項16所述之靜電卡盤，其中該軸包括一環形凹部，該環形凹部形成在該軸的一外表面中，其中該環形凹部鄰近該背側氣體耦合件而設置，且其中該背側氣體通道將該環形凹部流體耦合至該背側氣體導管。
  18. 一種處理腔室，包括：一腔室主體，該腔室主體具有一內部體積；及如請求項1所述之靜電卡盤，該靜電卡盤設置在該內部體積的一下部內。
  19. 如請求項18所述之處理腔室，進一步包括：一冷卻器，該冷卻器耦合到該低溫供應腔室以透過該低溫供應腔室將低溫介質供應至該靜電卡盤。
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