TWI801915B - 半導體製造裝置 - Google Patents
半導體製造裝置 Download PDFInfo
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- TWI801915B TWI801915B TW110123124A TW110123124A TWI801915B TW I801915 B TWI801915 B TW I801915B TW 110123124 A TW110123124 A TW 110123124A TW 110123124 A TW110123124 A TW 110123124A TW I801915 B TWI801915 B TW I801915B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims description 93
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- 150000003254 radicals Chemical class 0.000 abstract description 32
- 239000010453 quartz Substances 0.000 description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 44
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- -1 hydrogen radicals Chemical class 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
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- C23C8/24—Nitriding
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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- C23C8/34—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in more than one step
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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- H01J37/3244—Gas supply means
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Abstract
實施形態是在於提供一種可使自由基產生的控制性提升的半導體製造裝置。
實施形態的半導體製造裝置是具備:收容半導體基板的腔室、及被設在腔室的側面的複數的線圈。
腔室是具有:
在半導體基板的上方被複數的線圈之一的第1線圈所包圍的第1空間區域;
連通至第1空間區域的第1氣體導入口;
被複數的線圈之中與第1線圈不同的第2線圈所包圍的第2空間區域;及
連通至第2空間區域的第2氣體導入口。
Description
本發明的實施形態是關於半導體製造裝置。
[關聯申請案]
本案享有以日本特許申請案2020-155722號(申請日:2020年9月16日)作為基礎申請案的優先權。本案是藉由參照此基礎申請案而包含基礎申請案的全部的內容。
半導體製造裝置之一,有電漿處理裝置。在此電漿處理裝置中,一旦通電至包圍腔室的線圈,導入氣體,則電漿會在腔室內產生。藉由此電漿,產生自由基。藉由此自由基,對於被形成於半導體基板的膜,例如進行氧化或氮化等的處理。
上述自由基的產生量是有受來自線圈的距離影響的情況。並且,將複數種的氣體同時導入至腔室時,電子的解離特性是按照氣體種類而異,因此難以按每個氣體控制自由基產生。
本發明的實施形態是提供一種可使自由基產生的控制性提升的半導體製造裝置。
實施形態的半導體製造裝置是具備:收容半導體基板的腔室、及被設在腔室的側面的複數的線圈。
腔室是具有:
在半導體基板的上方被複數的線圈之一的第1線圈所包圍的第1空間區域;
連通至第1空間區域的第1氣體導入口;
以複數的線圈之中與第1線圈不同的第2線圈所包圍的第2空間區域;及
連通至第2空間區域的第2氣體導入口。
以下,參照圖面說明本發明的實施形態。本實施形態並非是限定本發明者。
(第1實施形態)
圖1是表示第1實施形態的半導體製造裝置的概略性的構造的剖面圖。圖1所示的半導體製造裝置1是具備平台10、第1石英管20、第2石英管30、第1線圈40、第2線圈50及淋浴板60。本實施形態的半導體製造裝置1是對於被形成於半導體基板101的上面的膜102進行氧化或氮化等的處理的電漿處理裝置。
在平台10載置半導體基板101。被形成於半導體基板101的上面的膜102是例如含鎢(W)的金屬膜。
第1石英管20及第2石英管30是構成腔室,被配置成同心狀的多重管構造。另外,也包括此多重管構造是3重以上的同心狀配置的石英管。
首先,說明有關第1石英管20。第1石英管20是收容半導體基板101,具有第1空間區域21及第1氣體導入口22。第1空間區域21是在半導體基板101的上方被第1線圈40包圍的第1石英管20的內部空間。
第1氣體導入口22是被形成於第1石英管20的上面,連通至第1空間區域21。在第1氣體導入口22是導入第1氣體201。第1氣體201是例如氧(O
2)氣體、氮(N
2)氣體、或氫(H
2)氣體、或混合各者的氣體的氣體。
接著,說明第2石英管30。第2石英管30是在第1石英管20內被配置於半導體基板101(膜102)的中央部的上方,具有第1管狀部30a及第2管狀部30b。第1管狀部30a是具有第2空間區域31及第2氣體導入口32。第2空間區域31是在第1空間區域21的上方被第2線圈50包圍的第1管狀部30a的內部空間。
第2氣體導入口32是被形成於第1管狀部30a的上面,連通至第2空間區域31。第2氣體導入口32是第2氣體202會與第1氣體201同時被導入。第2氣體202是與第1氣體201同種的氣體。
第2管狀部30b是從第1管狀部30a的底部朝向第1空間區域21突出。第2氣體202的流路會藉由第2管狀部30b來與第1氣體201的流路(第1空間區域21)隔開。因此,第1氣體201與第2氣體202不易混雜。為了迴避第1氣體201及第2氣體202的混合,第2管狀部30b是最好延伸至與第1線圈40的下端部相同的位置。換言之,第2管狀部30b的底部與第1線圈40的下端部是最好離半導體基板101的高度相同。
在本實施形態的第2石英管30中,第2管狀部30b的開口徑是與第1管狀部30a的開口徑相等,因此在第1管狀部30a產生的自由基的流動是在第2管狀部30b不被阻礙。又,若第2管狀部30b的厚度t2大,則藉由第1線圈40的自由基產生會被阻礙。為了抑制此自由基產生的阻礙,最好第2管狀部30b的厚度t2是比第1管狀部30a的厚度t1更薄。
第1線圈40是被設在第1石英管20的側面。一旦電流流動於第1線圈40,第1氣體201從第1氣體導入口22導入,則在第1空間區域21產生電漿。藉由此電漿,含在第1氣體201中的分子的自由基會被產生。藉由此自由基,膜102的外周部會被氧化或氮化。另外,在圖1中,第1線圈40是被設在第1石英管20的側面的外側,但亦可被設在側面的內側。
第2線圈50是被設在第1管狀部30a的側面。一旦電流流動於第2線圈50,則在第2空間區域31產生電漿。藉由此電漿,含在第2氣體202中的分子的自由基會被產生。藉由此自由基,膜102的中央部會被氧化或氮化。本實施形態是以在第2空間區域31產生的自由基的密度會與在第1空間區域21產生的自由基的密度相等的方式設定第2線圈50。例如,關於第2線圈50,線圈長、捲數及電流是被設定成與第1線圈40同值。
淋浴板60是被設在第1石英管20及第2石英管30的上面。淋浴板60是將第1氣體201引導至第1氣體導入口22,且將第2氣體202引導至第2氣體導入口32。
以下,參照圖2,說明有關比較例的半導體製造裝置。圖2是比較例的半導體製造裝置的概略性的構造的剖面圖。對與圖1所示的半導體製造裝置1同樣的構成要素附上同樣的符號,省略詳細的說明。
在圖2所示的半導體製造裝置100中,第1線圈40會被設在石英腔室120的側面,但第2石英管30及第2線圈50是未被設在石英腔室120內。因此,第1空間區域21的自由基密度會按照與第1線圈40的距離而容易形成不均一。具體而言,離開第1線圈40的第1空間區域21的中央是自由基密度變低。
因此,例如氫氣體及氧氣體作為第1氣體201從第1氣體導入口22導入至第1空間區域21時,有還原劑即氫自由基失活的情況。此情況,在膜102的中央部會發生鎢的異常氧化。
另一方面,在本實施形態中,在第1石英管20內設有第2石英管30及第2線圈50。並且,在第1石英管20是第1氣體201會從第1氣體導入口22導入的同時,在第2石英管30是第2氣體202會從第2氣體導入口32導入。亦即,本實施形態的半導體製造裝置1是在腔室的內部區域與外部區域分別從不同的氣體導入口供給氣體,以個別的線圈來產生自由基。因此,可在內部區域與外部區域控制自由基量或自由基比率。
因此,若根據本實施形態,則可使自由基產生的控制性提升。
(第1變形例)
圖3是表示第1變形例的半導體製造裝置的要部的構造的剖面圖。對與上述的第1實施形態的半導體製造裝置1同樣的構成要素附上同樣的符號,省略詳細的說明。
在本變形例的半導體製造裝置中,如圖3所示般,磁性體70會在第2石英管30的第1管狀部30a內包圍第2線圈50。第2線圈50的磁氣是有影響第1空間區域21的電漿的產生的情況。此情況,估計第1空間區域21的自由基產生的控制會被阻礙。
於是,在本變形例中,磁性體70是藉由包圍第2線圈50全體,作為遮斷第2線圈50的磁氣的屏蔽機能。藉由此機能,可使第1空間區域21的自由基產生的控制性更提升。
(第2變形例)
圖4是表示第2變形例的半導體製造裝置的概略性的構造的剖面圖。對與上述的第1實施形態的半導體製造裝置1同樣的構成要素附上同樣的符號,省略詳細的說明。
在本變形例的半導體製造裝置1b中,如圖4所示般,第2石英管30的構造與第1實施形態不同。在第1實施形態中,第1管狀部30a被配置於第2管狀部30b的上側。
另一方面,在本變形例中,第1管狀部30a及第2管狀部30b的上下的位置關係與第1實施形態相反。亦即,第1管狀部30a被配置於第2管狀部30b的下側。
並且,在第1實施形態中,第1線圈40被配置於第2線圈50的下側,相對的,在本變形例中,兩線圈的位置關係形成與第1實施形態相反。亦即,第1線圈40被配置於第2線圈50的上側。
即使是上述般的配置構成,也可在第1空間區域21及第2空間區域31分別個別地導入氣體,以各線圈來控制自由基產生。
因此,在本變形例中也可使自由基產生的控制性提升。
(第2實施形態)
圖5是表示第2實施形態的半導體製造裝置的概略性的構造的剖面圖。對與上述的第1實施形態的半導體製造裝置1同樣的構成要素是附上相同的符號,省略詳細的說明。
在本實施形態的半導體製造裝置2中,第1線圈40會包圍石英腔室121的側面。又,第2線圈50會在第1線圈40的下方包圍石英腔室121的側面。進一步,第2氣體導入口32會被設在第1線圈40與第2線圈50之間。
在第2氣體導入口32導入比第1氣體201更容易自由基化的第2氣體202。例如,當第1氣體201為氦(He)氣體時,第2氣體202為氧氣體。
在本實施形態中,為了在第1空間區域21及第2空間區域31個別的調整自由基產生量,第1線圈40的功率是比第2線圈50的功率更大。具體而言,流動於第1線圈40的電流是比流動於第2線圈50的電流更大。或,第1線圈40的線圈長是比第2線圈50的線圈長更長。或,第1線圈40的線圈徑是比第2線圈50的線圈徑更大。或,第1線圈40是被配置在石英腔室121的側面的內側,第2線圈50是被配置在石英腔室121的側面的外側。
以下,說明有關本實施形態的半導體製造裝置1與圖2所示的比較例的半導體製造裝置100的比較。
在比較例的半導體製造裝置100,一旦在通電至第1線圈40的狀態下將混合氧氣體與氦氣體的第1氣體201從第1氣體導入口22往石英腔室120導入,則氧氣體及氦氣體的各個的自由基會在第1空間區域21被產生。在同電漿條件下,氦氣體是比氧氣體更不易自由基化。因此,在氦氣體與氧氣體之間產生自由基的產生量差,此產生量差會與有影響膜102的氧化處理的情況。
另一方面,在本實施形態中,第1氣體201從第1氣體導入口22導入至石英腔室121的同時,與第1氣體201異種的第2氣體202會從第2氣體導入口32導入至石英腔室121。在石英腔室121中,藉由調整第1線圈40及第2線圈50的功率,可個別的控制第1氣體201的自由基產生量及第2氣體202的自由基產生量。
因此,若根據本實施形態,則在同時導入異種的氣體時,也可使自由基產生的控制性提升。
圖6是表示第3變形例的半導體製造裝置的概略性的構造的剖面圖。對與上述的第2實施形態的半導體製造裝置2同樣的構成要素是附上同樣的符號,省略詳細的說明。
在本變形例的半導體製造裝置2中,從第1線圈40的中心到石英腔室121的側面的距離D1比從第2線圈50的中心到石英腔室121的側面的距離D2更小。至石英腔室121的距離越小,電漿強度越高。
因此,在本變形例中,藉由將第1線圈40配置於比第2線圈50更接近石英腔室121的位置,可將第1空間區域21的電漿強度設定成比第2空間區域31的電漿強度更高。藉此,與第2實施形態同樣,第1氣體201的自由基產生會被促進。
若根據以上說明的本變形,則與第2實施形態同樣,在同時導入異種的氣體時,也可使自由基產生的控制性提升。
說明了本發明的幾個的實施形態,但該等的實施形態是舉例提示者,不是意圖限定發明的範圍。該等實施形態是可以其他的各種的形態實施,可在不脫離發明的要旨的範圍進行各種的省略、置換、變更。該等實施形態或其變形是與含在發明的範圍或主旨同樣,含在申請專利範圍記載的發明及其均等的範圍。
1,1b,2:半導體製造裝置
10:平台
20:第1石英管
21:第1空間區域
22:第1氣體導入口
30:第2石英管
30a:第1管狀部
30b:第2管狀部
31:第2空間區域
32:第2氣體導入口
40:第1線圈
50:第2線圈
60:淋浴板
70:磁性體
100:半導體製造裝置
101:半導體基板
102:膜
120:石英腔室
121:石英腔室
201:第1氣體
202:第2氣體
t1:厚度
t2:厚度
D1:距離
D2:距離
[圖1]是概略性地表示第1實施形態的半導體製造裝置的構成的模式圖。
[圖2]是表示比較例的半導體製造裝置的概略性的構造的剖面圖。
[圖3]是表示第1變形例的半導體製造裝置的要部的構造的剖面圖。
[圖4]是表示第2變形例的半導體製造裝置的概略性的構造的剖面圖。
[圖5]是表示第2實施形態的半導體製造裝置的概略性的構造的剖面圖。
[圖6]是表示第3變形例的半導體製造裝置的概略性的構造的剖面圖。
1:半導體製造裝置
10:平台
20:第1石英管
21:第1空間區域
22:第1氣體導入口
30:第2石英管
30a:第1管狀部
30b:第2管狀部
31:第2空間區域
32:第2氣體導入口
40:第1線圈
50:第2線圈
60:淋浴板
101:半導體基板
102:膜
201:第1氣體
202:第2氣體
t1,t2:厚度
Claims (10)
- 一種半導體製造裝置,其特徵係具備:收容半導體基板的腔室;及被設在前述腔室的側面的複數的線圈,前述腔室,係具有:在前述半導體基板的上方被前述複數的線圈之一的第1線圈所包圍的第1空間區域;連通至前述第1空間區域的第1氣體導入口;以前述複數的線圈之中與前述第1線圈不同的第2線圈所包圍的第2空間區域;及連通至前述第2空間區域的第2氣體導入口,前述第1線圈,係被配置於前述第2線圈的上方,前述第2氣體導入口,係被配置於前述第1線圈與前述第2線圈之間,前述第2氣體,係被導入至前述第1空間區域與前述第2空間區域之間。
- 如請求項1記載的半導體製造裝置,其中,前述第1線圈的功率,係比前述第2線圈的功率更大。
- 如請求項2記載的半導體製造裝置,其中,從前述第1線圈的中心到前述腔室的側面的距離,係比從前述第2線圈的中心到前述側面的距離更小。
- 如請求項2記載的半導體製造裝置,其中,流動於前述第1線圈的電流,係比流動於第2線圈的電流更大。
- 如請求項2記載的半導體製造裝置,其中,前述第1線圈的線圈長,係比前述第2線圈的線圈長更長。
- 如請求項2記載的半導體製造裝置,其中,前述第1線圈的線圈徑,係比前述第2線圈的線圈徑更大。
- 如請求項2記載的半導體製造裝置,其中,前述第1線圈,係配置於前述腔室的側面的內側,前述第2線圈,係配置於前述腔室的側面的外側。
- 如請求項1~7的任一項記載的半導體製造裝置,其中,在前述第1氣體導入口,係導入第1氣體,在前述第2氣體導入口,係與前述第1氣體同時導入和前述第1氣體異種的第2氣體。
- 如請求項8記載的半導體製造裝置,其中,前述第1氣體為氦氣體,前述第2氣體為氧氣體。
- 如請求項1~7的任一項記載的半導體製造裝置,其中,在前述第1空間區域及前述第2空間區域個別調整自由基產生量。
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