CN114267571A - 半导体制造装置 - Google Patents
半导体制造装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims description 91
- 239000010453 quartz Substances 0.000 claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
实施方式提供一种能够使自由基生成的控制性提高的半导体制造装置。实施方式所涉及的半导体制造装置具备容纳半导体基板的腔室和设置于腔室的侧面的多个线圈。腔室具有:在半导体基板的上方被作为多个线圈之一的第1线圈包围的第1空间区域、与第1空间区域连通的第1气体导入口、被多个线圈中的与第1线圈不同的第2线圈包围的第2空间区域和与第2空间区域连通的第2气体导入口。
Description
本申请享受以日本专利申请2020-155722号(申请日:2020年9月16日)为基础申请的优先权。本申请通过参照该基础申请而包含基础申请的全部内容。
技术领域
本发明的实施方式涉及半导体制造装置。
背景技术
作为半导体制造装置之一有等离子体处理装置。在该等离子体处理装置中,在通过包围腔室的线圈导入气体时,在腔室内产生等离子体。通过该等离子体,生成自由基。通过该自由基,对形成于半导体基板的膜进行例如氧化或氮化这样的处理。
发明内容
上述自由基的生成量有时受到距线圈的距离的影响。另外,在将多种气体同时导入腔室的情况下,电子的离解特性根据气体种类而不同,所以难以按每种气体控制自由基的生成。
本发明的实施方式提供一种能够使自由基生成的控制性提高的半导体制造装置。
实施方式所涉及的半导体制造装置具备容纳半导体基板的腔室和设置于腔室的侧面的多个线圈。腔室具有:在半导体基板的上方被作为多个线圈之一的第1线圈包围的第1空间区域、与第1空间区域连通的第1气体导入口、被多个线圈中的与第1线圈不同的第2线圈包围的第2空间区域、和与第2空间区域连通的第2气体导入口。
附图说明
图1是概略表示第1实施方式所涉及的半导体制造装置的构成的示意图。
图2是表示比较例所涉及的半导体制造装置的概略构造的剖视图。
图3是表示第1变形例所涉及的半导体制造装置的要部的构造的剖视图。
图4是表示第2变形例所涉及的半导体制造装置的概略构造的剖视图。
图5是表示第2实施方式所涉及的半导体制造装置的概略构造的剖视图。
图6是表示第3变形例所涉及的半导体制造装置的概略构造的剖视图。
附图标记说明
1、1b、2:半导体制造装置,20:第1石英管,21:第1空间区域,22:第1气体导入口,30:第2石英管,30a:第1管状部,30b:第2管状部,31:第2空间区域,32:第2气体导入口,40:第1线圈,50:第2线圈,70:磁性体,101:半导体基板,201:第1气体,202:第2气体。
具体实施方式
以下,参照附图对本发明的实施方式进行说明。本发明并不限定于本实施方式。
(第1实施方式)
图1是表示第1实施方式所涉及的半导体制造装置的概略构造的剖视图。图1所示的半导体制造装置1具备载置台10、第1石英管20、第2石英管30、第1线圈40、第2线圈50和喷淋板(Spray plate)60。本实施方式所涉及的半导体制造装置1为对形成于半导体基板101的上表面的膜102进行氧化或氮化等处理的等离子体处理装置。
在载置台10,载置有半导体基板101。形成于半导体基板101的上表面的膜102为例如包含钨(W)的金属膜。
第1石英管20及第2石英管30构成腔室,为被配置成同心状的多重管构造。此外,该多重管构造也包括3重以上的被配置成同心的石英管。
首先对第1石英管20进行说明。第1石英管20容纳半导体基板101,具有第1空间区域21及第1气体导入口22。第1空间区域21是在半导体基板101的上方被第1线圈40包围的第1石英管20的内部空间。
第1气体导入口22形成于第1石英管20的上表面,与第1空间区域21连通。向第1气体导入口22导入第1气体201。第1气体201例如为氧气(O2)、氮气(N2)、或氢气(H2)或将各气体混合而成的气体。
接下来,对第2石英管30进行说明。第2石英管30在第1石英管20内配置于半导体基板101(膜102)的中央部的上方,具有第1管状部30a及第2管状部30b。第1管状部30a具有第2空间区域31及第2气体导入口32。第2空间区域31为在第1空间区域21的上方被第2线圈50包围的第1管状部30a的内部空间。
第2气体导入口32形成于第1管状部30a的上表面,与第2空间区域31连通。向第2气体导入口32,与第1气体201同时地导入第2气体202。第2气体202为与第1气体201相同种类的气体。
第2管状部30b从第1管状部30a的底部朝向第1空间区域21突出。通过第2管状部30b,将第2气体202的流路与第1气体201的流路(第1空间区域21)区划开。因此,第1气体201与第2气体202变得难以混合。为了避免第1气体201及第2气体202的混合,第2管状部30b优选延伸到与第1线圈40的下端部相同的位置。换而言之,第2管状部30b的底部与第1线圈40的下端部优选距离半导体基板101的高度相同。
在本实施方式的第2石英管30中,第2管状部30b的开口直径与第1管状部30a的开口直径相等,所以在第1管状部30a中生成的自由基的流动不会被第2管状部30b阻碍。另外,如果第2管状部30b的厚度t2大,则第1线圈40进行的自由基生成会受到阻碍。为了抑制对该自由基生成的阻碍,第2管状部30b的厚度t2优选比第1管状部30a的厚度t1薄。
第1线圈40设置于第1石英管20的侧面。在电流在第1线圈40中流动并使第1气体201从第1气体导入口22导入时,在第1空间区域21产生等离子体。通过该等离子体,生成第1气体201所含的分子的自由基。通过该自由基,膜102的外周部被氧化或氮化。此外,在图1中,第1线圈40设置于第1石英管20的侧面的外侧,但也可以设置于侧面的内侧。
第2线圈50设置于第1管状部30a的侧面。在电流在第2线圈50中流动时,在第2空间区域31产生等离子体。通过该等离子体,生成第2气体202所含的分子的自由基。通过该自由基,膜102的中央部被氧化或氮化。在本实施方式中,以使得在第2空间区域31中生成的自由基的密度与在第1空间区域21中生成的自由基的密度相等的方式,设定第2线圈50。例如,关于第2线圈50,线圈长、匝数及电流设定为与第1线圈40相同的值。
喷淋板60设置于第1石英管20及第2石英管30的上表面。喷淋板60将第1气体201向第1气体导入口22引导,并且将第2气体202向第2气体导入口32引导。
以下,参照图2,对比较例所涉及的半导体制造装置进行说明。图2是表示比较例所涉及的半导体制造装置的概略构造的剖视图。对于与图1所示的半导体制造装置1同样的构成要素,赋予相同附图标记,将详细的说明省略。
在图2所示的半导体制造装置100中,第1线圈40设置于石英腔室120的侧面,而第2石英管30及第2线圈50未设置于石英腔室120内。因此,第1空间区域21中的自由基密度容易相应于与第1线圈40的距离而变得不均匀。具体而言,在远离第1线圈40的第1空间区域21的中央,自由基密度变低。
因此,例如在将氢气及氧气作为第1气体201而从第1气体导入口22导入到第1空间区域21的情况下,有时作为还原剂的氢自由基失去活性(失活)。在该情况下,可能在膜102的中央部产生钨的异常氧化。
另一方面,在本实施方式中,在第1石英管20内,设有第2石英管30及第2线圈50。另外,在从第1气体导入口22向第1石英管20导入第1气体201的同时,从第2气体导入口32向第2石英管30导入第2气体202。即,本实施方式所涉及的半导体制造装置1中,在腔室的内部区域与外部区域分别从不同的气体导入口供给气体,通过独立的线圈生成自由基。因此,能够在内部区域与外部区域控制自由基量、自由基比率。
因此,根据本实施方式,能够使自由基生成的控制性提高。
(第1变形例)
图3是表示第1变形例所涉及的半导体制造装置的要部的构造的剖视图。对与上述的第1实施方式所涉及的半导体制造装置1同样的构成要素,赋予相同附图标记,将详细的说明省略。
在本变形例所涉及的半导体制造装置中,如图3所示,磁性体70在第2石英管30的第1管状部30a内包围第2线圈50。第2线圈50的磁性有时给第1空间区域21中的等离子体的产生带来影响。在该情况下,设想会妨碍第1空间区域21中的自由基生成的控制。
因此,在本变形例中,磁性体70通过包围第2线圈50整体,而作为隔绝第2线圈50的磁力的屏蔽件发挥功能。通过该功能,能够使第1空间区域21中的自由基生成的控制性进一步提高。
(第2变形例)
图4是表示第2变形例所涉及的半导体制造装置的概略构造的剖视图。对于与上述的第1实施方式所涉及的半导体制造装置1同样的构成要素,赋予相同附图标记,将详细的说明省略。
在本变形例所涉及的半导体制造装置1b中,如图4所示,第2石英管30的构造与第1实施方式不同。在第1实施方式中,第1管状部30a配置于第2管状部30b的上侧。
另一方面,在本变形例中,第1管状部30a及第2管状部30b的上下位置关系与第1实施方式相反。即,第1管状部30a配置于第2管状部30b的下侧。
另外,在第1实施方式中,第1线圈40配置于第2线圈50的下侧,与此相对,在本变形例中,两线圈的位置关系与第1实施方式相反。即,第1线圈40配置于第2线圈50的上侧。
在上述那样的配置构成中,也能够向第1空间区域21及第2空间区域31分别独立地导入气体,通过各线圈控制自由基的生成。
因此,在本变形例中,也能够使自由基生成的控制性提高。
(第2实施方式)
图5是表示第2实施方式所涉及的半导体制造装置的概略构造的剖视图。对于与上述的第1实施方式所涉及的半导体制造装置1同样的构成要素,赋予相同附图标记,将详细的说明省略。
在本实施方式所涉及的半导体制造装置2中,第1线圈40包围石英腔室121的侧面。另外,第2线圈50在第1线圈40的下方包围石英腔室121的侧面。进而,第2气体导入口32设置于第1线圈40与第2线圈50之间。
向第2气体导入口32,导入比第1气体201容易自由基化的第2气体202。例如,在第1气体201为氦气(He)的情况下,第2气体202为氧气。
在本实施方式中,为了在第1空间区域21及第2空间区域31中分别调整自由基生成量,第1线圈40的功率比第2线圈50的功率大。具体而言,在第1线圈40中流动的电流比在第2线圈50中流动的电流大。或者第1线圈40的线圈长比第2线圈50的线圈长要长。或者第1线圈40的线圈直径比第2线圈50的线圈直径大。或者第1线圈40配置于石英腔室121的侧面的内侧,第2线圈50配置于石英腔室121的侧面的外侧。
以下,对本实施方式所涉及的半导体制造装置1与图2所示的比较例所涉及的半导体制造装置100的比较进行说明。
在比较例所涉及的半导体制造装置100中,在向第1线圈40通电了的状态下将氧气与氦气混合而成的第1气体201从第1气体导入口22向石英腔室120导入时,在第1空间区域21生成氧气及氦气各自的自由基。在相同的等离子体条件下,氦气比氧气难自由基化。因此,在氦气与氧气之间产生自由基的生成量差,该生成量差有时影响膜102的氧化处理。
另一方面,在本实施方式中,在将第1气体201从第1气体导入口22向石英腔室121导入的同时,将与第1气体201不同种类的第2气体202从第2气体导入口32向石英腔室121导入。在石英腔室121中,通过调整第1线圈40及第2线圈50的功率,能够分别控制第1气体201的自由基生成量及第2气体202的自由基生成量。
因此,根据本实施方式,在将不同种类的气体同时导入的情况下,也能够使自由基生成的控制性提高。
(第3变形例)
图6是表示第3变形例所涉及的半导体制造装置的概略构造的剖视图。对于与上述的第2实施方式所涉及的半导体制造装置2同样的构成要素,赋予相同附图标记,将详细的说明省略。
在本变形例所涉及的半导体制造装置2中,从第1线圈40的中心到石英腔室121的侧面的距离D1比从第2线圈50的中心到石英腔室121的侧面的距离D2小。到石英腔室121的距离越小,则等离子体强度越高。
因此,在本变形例中,通过将第1线圈40配置在比第2线圈50更接近石英腔室121的位置,而将第1空间区域21的等离子体强度设定得比第2空间区域31的等离子体强度高。由此,与第2实施方式同样,可促进第1气体201的自由基生成。
根据以上说明的本变形,与第2实施方式同样,在同时导入不同种类的气体的情况下,也能够使自由基生成的控制性提高。
虽然说明了本发明的几个实施方式,但这些实施方式只是作为示例而提出的,并非旨在限定发明的范围。这些实施方式能够以其他各种方式进行实施,能够在不脱离发明的宗旨的范围内进行各种省略、替换、变更。这些实施方式及其变形被包括在发明的范围和宗旨中,同样地被包括在权利要求书所记载的发明及其均等的范围内。
Claims (15)
1.一种半导体制造装置,具备:
容纳半导体基板的腔室;和
设置于所述腔室的侧面的多个线圈,
所述腔室具有:在所述半导体基板的上方被作为所述多个线圈之一的第1线圈包围的第1空间区域、与所述第1空间区域连通的第1气体导入口、被所述多个线圈中的与所述第1线圈不同的第2线圈包围的第2空间区域以及与所述第2空间区域连通的第2气体导入口。
2.根据权利要求1所述的半导体制造装置,
所述腔室具有:具有所述第1空间区域及所述第1气体导入口的第1石英管和具有所述第2空间区域及所述第2气体导入口的第2石英管,所述第1石英管及所述第2石英管为配置成同心状的多重管构造。
3.根据权利要求2所述的半导体制造装置,
在所述第2石英管内还具备包围所述第2线圈的磁性体。
4.根据权利要求2所述的半导体制造装置,
所述第2石英管具有:具有所述第2空间区域的第1管状部和从所述第1管状部朝向所述第1空间区域突出的第2管状部,所述第2管状部的厚度比所述第1管状部的厚度薄。
5.根据权利要求1所述的半导体制造装置,
所述第1线圈配置于所述第2线圈的上方,
所述第2气体导入口配置于所述第1线圈与所述第2线圈之间。
6.根据权利要求2所述的半导体制造装置,
所述第2石英管配置于所述半导体基板的中央部的上方。
7.根据权利要求4所述的半导体制造装置,
所述第1管状部的开口直径与所述第2管状部的开口直径相等。
8.根据权利要求4所述的半导体制造装置,
所述第2管状部延伸到与所述第1线圈的下端部相同的位置。
9.根据权利要求1所述的半导体制造装置,
所述第1线圈配置于所述第2线圈的下方。
10.根据权利要求1所述的半导体制造装置,
所述第1线圈配置于所述第2线圈的上方。
11.根据权利要求1所述的半导体制造装置,
向所述第1气体导入口导入第1气体,向所述第2气体导入口与导入所述第1气体同时地导入与所述第1气体相同种类的第2气体。
12.根据权利要求11所述的半导体制造装置,
所述第1气体及所述第2气体为氧气与氢气的混合气体或氮气与氢气的混合气体。
13.根据权利要求5所述的半导体制造装置,
从所述第1线圈的中心到所述腔室的侧面的距离比从所述第2线圈的中心到所述侧面的距离小。
14.根据权利要求1所述的半导体制造装置,
向所述第1气体导入口导入第1气体,向所述第2气体导入口与导入所述第1气体同时地导入与所述第1气体不同种类的第2气体。
15.根据权利要求14所述的半导体制造装置,
所述第1气体为氦气,所述第2气体为氧气。
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