TWI801130B - 記憶體元件及其製造方法 - Google Patents

記憶體元件及其製造方法 Download PDF

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Publication number
TWI801130B
TWI801130B TW111104863A TW111104863A TWI801130B TW I801130 B TWI801130 B TW I801130B TW 111104863 A TW111104863 A TW 111104863A TW 111104863 A TW111104863 A TW 111104863A TW I801130 B TWI801130 B TW I801130B
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TW
Taiwan
Prior art keywords
fabricating
same
memory device
memory
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TW111104863A
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English (en)
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TW202333346A (zh
Inventor
丁榕泉
蔡亞峻
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旺宏電子股份有限公司
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Priority to TW111104863A priority Critical patent/TWI801130B/zh
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Publication of TWI801130B publication Critical patent/TWI801130B/zh
Publication of TW202333346A publication Critical patent/TW202333346A/zh

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TW111104863A 2022-02-10 2022-02-10 記憶體元件及其製造方法 TWI801130B (zh)

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TW111104863A TWI801130B (zh) 2022-02-10 2022-02-10 記憶體元件及其製造方法

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TW111104863A TWI801130B (zh) 2022-02-10 2022-02-10 記憶體元件及其製造方法

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TWI801130B true TWI801130B (zh) 2023-05-01
TW202333346A TW202333346A (zh) 2023-08-16

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202121605A (zh) * 2019-11-13 2021-06-01 美商美光科技公司 記憶體陣列及用於形成包括記憶體單元串之記憶體陣列之方法
TW202121661A (zh) * 2019-08-05 2021-06-01 美商美光科技公司 記憶體陣列及用於形成包含記憶體單元串及可操作直通陣列通孔之記憶體陣列的方法
TW202143226A (zh) * 2020-05-01 2021-11-16 日商鎧俠股份有限公司 半導體記憶裝置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202121661A (zh) * 2019-08-05 2021-06-01 美商美光科技公司 記憶體陣列及用於形成包含記憶體單元串及可操作直通陣列通孔之記憶體陣列的方法
TW202121605A (zh) * 2019-11-13 2021-06-01 美商美光科技公司 記憶體陣列及用於形成包括記憶體單元串之記憶體陣列之方法
TW202143226A (zh) * 2020-05-01 2021-11-16 日商鎧俠股份有限公司 半導體記憶裝置

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TW202333346A (zh) 2023-08-16

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