TWI799806B - 記憶體裝置及其形成方法 - Google Patents

記憶體裝置及其形成方法 Download PDF

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Publication number
TWI799806B
TWI799806B TW110108199A TW110108199A TWI799806B TW I799806 B TWI799806 B TW I799806B TW 110108199 A TW110108199 A TW 110108199A TW 110108199 A TW110108199 A TW 110108199A TW I799806 B TWI799806 B TW I799806B
Authority
TW
Taiwan
Prior art keywords
memory device
method forming
forming same
same
memory
Prior art date
Application number
TW110108199A
Other languages
English (en)
Other versions
TW202205538A (zh
Inventor
李璧伸
衛怡揚
林杏蓮
匡訓沖
蔡正原
海光 金
Original Assignee
台灣積體電路製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 台灣積體電路製造股份有限公司 filed Critical 台灣積體電路製造股份有限公司
Publication of TW202205538A publication Critical patent/TW202205538A/zh
Application granted granted Critical
Publication of TWI799806B publication Critical patent/TWI799806B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
TW110108199A 2020-07-23 2021-03-08 記憶體裝置及其形成方法 TWI799806B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063055379P 2020-07-23 2020-07-23
US63/055,379 2020-07-23
US17/125,091 US11665909B2 (en) 2020-07-23 2020-12-17 FeRAM with laminated ferroelectric film and method forming same
US17/125,091 2020-12-17

Publications (2)

Publication Number Publication Date
TW202205538A TW202205538A (zh) 2022-02-01
TWI799806B true TWI799806B (zh) 2023-04-21

Family

ID=77021124

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110108199A TWI799806B (zh) 2020-07-23 2021-03-08 記憶體裝置及其形成方法

Country Status (7)

Country Link
US (3) US11665909B2 (zh)
EP (1) EP3958262A1 (zh)
JP (1) JP2022022192A (zh)
KR (1) KR102459559B1 (zh)
CN (1) CN113675202B (zh)
DE (1) DE102020134634A1 (zh)
TW (1) TWI799806B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11665909B2 (en) * 2020-07-23 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. FeRAM with laminated ferroelectric film and method forming same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153898A (en) * 1997-07-09 2000-11-28 Sony Corporation Ferroelectric capacitor, method of manufacturing same and memory cell using same
US6340621B1 (en) * 1996-10-30 2002-01-22 The Research Foundation Of State University Of New York Thin film capacitor and method of manufacture
TW517347B (en) * 1996-12-25 2003-01-11 Hitachi Ltd Ferroelectric memory element and manufacture thereof
US20030102500A1 (en) * 2001-12-04 2003-06-05 Fujitsu Limited Ferroelectric capacitor having upper electrode lamination and manufacture thereof
US6982444B2 (en) * 1998-07-24 2006-01-03 Kabushiki Kaisha Toshiba Ferroelectric memory device having a hydrogen barrier film
US20160172365A1 (en) * 2014-11-02 2016-06-16 Thomas J. McKinnon Ferroelectric memory device and fabrication process thereof, and methods for operation thereof
US9779797B2 (en) * 2014-03-17 2017-10-03 Toshiba Memory Corporation Non-volatile memory device
US20190131383A1 (en) * 2017-10-30 2019-05-02 International Business Machines Corporation Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Back-End

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3480624B2 (ja) * 1995-06-09 2003-12-22 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
KR100265846B1 (ko) 1997-06-30 2000-10-02 김영환 반도체소자의강유전체캐패시터제조방법
KR100275121B1 (ko) * 1997-12-30 2001-01-15 김영환 강유전체 캐패시터 제조방법
JP2000031402A (ja) * 1999-06-16 2000-01-28 Seiko Epson Corp 強誘電体記憶装置及び半導体記憶装置
JP4266103B2 (ja) 2001-12-07 2009-05-20 日本碍子株式会社 多孔質セラミック体の製造方法
JP3986859B2 (ja) 2002-03-25 2007-10-03 富士通株式会社 薄膜キャパシタ及びその製造方法
US6955926B2 (en) * 2004-02-25 2005-10-18 International Business Machines Corporation Method of fabricating data tracks for use in a magnetic shift register memory device
JP2009117768A (ja) * 2007-11-09 2009-05-28 Toshiba Corp 半導体記憶装置およびその製造方法
JP5845866B2 (ja) * 2011-12-07 2016-01-20 富士通セミコンダクター株式会社 半導体装置の製造方法
US10417891B2 (en) 2017-07-12 2019-09-17 Walmart Apollo, Llc Detecting fraudulently deactivated security devices for asset protection
US20190057860A1 (en) * 2017-08-18 2019-02-21 Lam Research Corporation Methods for improving performance in hafnium oxide-based ferroelectric material using plasma and/or thermal treatment
FR3075757B1 (fr) * 2017-12-22 2019-11-15 Airbus Helicopters Enveloppes aerodynamiques epaisses pour cols de pales et carenages de manchons de pales d'un rotor d'un aeronef
US10453861B1 (en) * 2018-03-28 2019-10-22 Sandisk Technologies Llc Ferroelectric non-volatile memory
KR102591098B1 (ko) 2018-03-29 2023-10-17 연세대학교 산학협력단 강유전성 구조체를 이용한 비휘발성 메모리 소자
CN109003636A (zh) * 2018-06-30 2018-12-14 合肥工业大学 一种基于垂直读写操作的多态非易失性固态存储单元
KR20200071852A (ko) 2018-12-04 2020-06-22 삼성전자주식회사 강유전층을 포함하는 전자 소자
US11665909B2 (en) * 2020-07-23 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. FeRAM with laminated ferroelectric film and method forming same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340621B1 (en) * 1996-10-30 2002-01-22 The Research Foundation Of State University Of New York Thin film capacitor and method of manufacture
TW517347B (en) * 1996-12-25 2003-01-11 Hitachi Ltd Ferroelectric memory element and manufacture thereof
US6153898A (en) * 1997-07-09 2000-11-28 Sony Corporation Ferroelectric capacitor, method of manufacturing same and memory cell using same
US6982444B2 (en) * 1998-07-24 2006-01-03 Kabushiki Kaisha Toshiba Ferroelectric memory device having a hydrogen barrier film
US20030102500A1 (en) * 2001-12-04 2003-06-05 Fujitsu Limited Ferroelectric capacitor having upper electrode lamination and manufacture thereof
US9779797B2 (en) * 2014-03-17 2017-10-03 Toshiba Memory Corporation Non-volatile memory device
US20160172365A1 (en) * 2014-11-02 2016-06-16 Thomas J. McKinnon Ferroelectric memory device and fabrication process thereof, and methods for operation thereof
US20190131383A1 (en) * 2017-10-30 2019-05-02 International Business Machines Corporation Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Back-End

Also Published As

Publication number Publication date
DE102020134634A1 (de) 2022-01-27
US11844226B2 (en) 2023-12-12
CN113675202B (zh) 2024-06-07
KR20220012794A (ko) 2022-02-04
EP3958262A1 (en) 2022-02-23
US11665909B2 (en) 2023-05-30
TW202205538A (zh) 2022-02-01
JP2022022192A (ja) 2022-02-03
KR102459559B1 (ko) 2022-10-26
US20240064998A1 (en) 2024-02-22
US20220392906A1 (en) 2022-12-08
US20220028874A1 (en) 2022-01-27
CN113675202A (zh) 2021-11-19

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