TWI800378B - 半導體裝置及其形成方法 - Google Patents

半導體裝置及其形成方法 Download PDF

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TWI800378B
TWI800378B TW111118005A TW111118005A TWI800378B TW I800378 B TWI800378 B TW I800378B TW 111118005 A TW111118005 A TW 111118005A TW 111118005 A TW111118005 A TW 111118005A TW I800378 B TWI800378 B TW I800378B
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Taiwan
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forming
same
semiconductor devices
semiconductor
devices
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TW111118005A
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TW202301678A (zh
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林育樟
王寶明
陳亮吟
張惠政
育佳 楊
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台灣積體電路製造股份有限公司
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201503377A (zh) * 2013-07-12 2015-01-16 United Microelectronics Corp 鰭式二極體結構
TW202109636A (zh) * 2019-08-30 2021-03-01 台灣積體電路製造股份有限公司 半導體裝置的製造方法
TW202109630A (zh) * 2019-08-30 2021-03-01 台灣積體電路製造股份有限公司 半導體裝置的製造方法
TW202109678A (zh) * 2019-08-30 2021-03-01 台灣積體電路製造股份有限公司 半導體裝置之製造方法
TW202118062A (zh) * 2019-09-26 2021-05-01 台灣積體電路製造股份有限公司 半導體裝置及其製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201503377A (zh) * 2013-07-12 2015-01-16 United Microelectronics Corp 鰭式二極體結構
TW202109636A (zh) * 2019-08-30 2021-03-01 台灣積體電路製造股份有限公司 半導體裝置的製造方法
TW202109630A (zh) * 2019-08-30 2021-03-01 台灣積體電路製造股份有限公司 半導體裝置的製造方法
TW202109678A (zh) * 2019-08-30 2021-03-01 台灣積體電路製造股份有限公司 半導體裝置之製造方法
TW202118062A (zh) * 2019-09-26 2021-05-01 台灣積體電路製造股份有限公司 半導體裝置及其製造方法

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